CN110459641A - A kind of photodetection chip and a kind of photodetector - Google Patents
A kind of photodetection chip and a kind of photodetector Download PDFInfo
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
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Abstract
The invention discloses a kind of photodetection chips, including substrate, n-type diffusion layer and p-diffusion layer；N-type diffusion layer and p-diffusion layer are alternately distributed along the thickness direction of substrate, to form multiple pn-junctions along substrate thickness directional spreding in the substrate.Each pn-junction can regard a photosensitive diode, any one pn-junction can generate corresponding electric current by light based on the received at work, to be detected according to the electric current to received optical signal.Due to being superimposed multiple pn-junctions in vertical direction, and each pn-junction can make induction to the light of acquisition, so that photodetection chip has been superimposed multilayer photosensitive area on a photosensitive area of script, so that photodetection chip has biggish photosensitive area.The present invention also provides a kind of photodetectors, equally have above-mentioned beneficial effect.
Description
Technical field
The present invention relates to technical field of photoelectric detection, more particularly to a kind of photodetection chip and a kind of photodetection
Device.
Background technique
With the continuous development of the continuous progress of science and technology in recent years and society, photodetector is in military and national economy
Every field have extensive use.Visible light or near infrared band be mainly used for radionetric survey and detection, industry automatic control,
Photometric Measurement etc.；Infrared band be mainly used for missile guidance, infrared thermal imaging, in terms of.
At this stage, the nuclear structure of CMOS photodetector is a light sensitive diode, and light sensitive diode is basic
Structure is pn-junction.In the prior art, it is very high integrated that detector may be implemented in the photodetection chip based on CMOS technology
Degree, so that the cost of photodetector is very low, the use of photodetection chip is also very simple, and bias is very low, energy
It consumes down to microwatt rank.
But in the prior art, the photosensitive area of the photodetection chip based on CMOS technology is usually insufficient, leads to it
Sensitivity is lower, so how to provide a kind of photodetection chip with larger photosensitive area is that those skilled in the art are badly in need of
It solves the problems, such as.
Summary of the invention
The object of the present invention is to provide a kind of photodetection chips, have biggish photosensitive area；Another mesh of the invention
Be a kind of photodetector is provided, have biggish photosensitive area.
In order to solve the above technical problems, the present invention provides a kind of photodetection chip, including substrate, n-type diffusion layer and p-type
Diffusion layer；
The n-type diffusion layer and the p-diffusion layer are alternately distributed along the thickness direction of the substrate, in the substrate
The middle multiple pn-junctions formed along the substrate thickness directional spreding；
The diffusion depth of any n-type diffusion layer is respectively less than the diffusion depth of the adjacent lower section p-diffusion layer, any
The diffusion depth of the p-diffusion layer is respectively less than the diffusion depth of the adjacent lower section n-type diffusion layer；Any N-shaped diffusion
The diffusion area of layer is respectively less than the diffusion area of the adjacent lower section p-diffusion layer, the diffusion area of any p-diffusion layer
The diffusion area of the respectively less than adjacent lower section n-type diffusion layer；The projection of any n-type diffusion layer in the horizontal direction covers
The projection of p-diffusion layer in the horizontal direction adjacent and above, the projection of any p-diffusion layer in the horizontal direction cover adjacent
The projection of top n-type diffusion layer in the horizontal direction；
Along the last one described pn-junction of ambient direction of illumination for responding infrared ray in the pn-junction.
Optionally, the photodetection chip includes multiple n-type diffusion layers or multiple p-diffusion layers；It is any
The n-type diffusion layer p-diffusion layer adjacent with one, which is formed between pn-junction, with another adjacent p-diffusion layer, to be provided with
Insulating layer.
Optionally, any n-type diffusion layer forms pn-junction with the adjacent p-diffusion layer.
Optionally, the substrate is p-substrate, and the photodetector includes:
Positioned at the first n-type diffusion layer of the substrate surface；
Positioned at first n-type diffusion layer backwards to first p-diffusion layer on the one side of substrate surface；
Positioned at first p-diffusion layer backwards to second n-type diffusion layer on the one side of substrate surface；
Positioned at second n-type diffusion layer backwards to second p-diffusion layer on the one side of substrate surface.
Optionally, the doping concentration of first n-type diffusion layer, the doping concentration of first p-diffusion layer, described
The doping concentration of two n-type diffusion layers, the doping concentration of second p-diffusion layer successively increase.
It optionally, further include the amplifying circuit for being located at the substrate surface；The n-type diffusion layer and the p-diffusion layer
It is electrically connected with the input terminal of the amplifying circuit.
Optionally, the amplifying circuit includes low noise amplifier circuit and power amplification circuit, the low noise amplification electricity
The input terminal on road is electrically connected with the n-type diffusion layer and the p-diffusion layer；The input terminal of the power amplification circuit with it is described
The output end of low noise amplifier circuit is electrically connected.
It optionally, further include the analog to digital conversion circuit for being located at the substrate surface, the input terminal of analog-digital conversion circuit as described
It is connect with the output end of the amplifying circuit.
It optionally, further include matrix operation module, the input terminal of the matrix operation module connects the analog-to-digital conversion electricity
The output end on road is to obtain the digital signal that analog-digital conversion circuit as described generates；
The matrix operation module is used for:
Calculate the optical signal ginseng that the corresponding pn-junction receives light according to the digital signal by matrix operation mode
Number.
The present invention also provides a kind of photodetectors, including photodetection chip as described in any one of the above embodiments.
A kind of photodetection chip provided by the present invention, including substrate, n-type diffusion layer and p-diffusion layer；N-shaped diffusion
Layer and p-diffusion layer are alternately distributed along the thickness direction of substrate, formed in the substrate along the multiple of substrate thickness directional spreding
Pn-junction.Each pn-junction can regard a photosensitive diode, any one pn-junction can light life based on the received at work
At corresponding electric current, to be detected according to the electric current to received optical signal.It is multiple due to being superimposed in vertical direction
Pn-junction, and each pn-junction can make induction to the light of acquisition, so that a photosurface of the photodetection chip in script
Multilayer photosensitive area is superimposed in product, so that photodetection chip has biggish photosensitive area.
Simultaneously as be superimposed multiple pn-junctions in vertical direction so that in photodetection chip photogenerated current increase
It is to be increased with the least squares of area, but the increase of noise is increased in a manner of the square root of area, so as to increase light
Ratio between raw electric current and noise, i.e. signal-to-noise ratio.Also, the thickness direction due to pn-junction along substrate is distributed, and extraneous different
The light of wavelength can mainly be penetrated at the pn-junction of different depth to be absorbed by different pn-junctions and generate corresponding electric current.Phase
Than in only with the photodetection chip of single pn-junction, through-thickness, which stacks multiple pn-junctions, can effectively extend photodetection core
The spectral response range of piece.Multiple pn-junction through-thickness, which are stacked, can also avoid causing because the chromatography of light source is unevenly distributed
The interference to optical signal detecting.
The present invention also provides a kind of photodetectors, equally have above-mentioned beneficial effect, are no longer repeated herein.
Detailed description of the invention
It, below will be to embodiment or existing for the clearer technical solution for illustrating the embodiment of the present invention or the prior art
Attached drawing needed in technical description is briefly described, it should be apparent that, the accompanying drawings in the following description is only this hair
Bright some embodiments for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is a kind of structural block diagram of photodetection chip provided by the embodiment of the present invention；
Fig. 2 is a kind of structural schematic diagram of specific photodetection chip provided by the embodiment of the present invention；
Fig. 3 is the structural schematic diagram of the specific photodetection chip of another kind provided by the embodiment of the present invention；
Fig. 4 is the structural schematic diagram of another specific photodetection chip provided by the embodiment of the present invention；
Fig. 5 for pn-junction institute each in Fig. 4 response wave length distribution map；
Fig. 6 is also a kind of structural block diagram of specific photodetection chip provided by the embodiment of the present invention.
In figure: 1. substrates, 2.pn knot, 21.n type diffusion layer, 211. first n-type diffusion layers, 212. second n-type diffusion layers,
22.p type diffusion layer, 221. first p-diffusion layers, 222. second p-diffusion layers, 23. insulating layers, 3. amplifying circuits, 4. moduluses
Conversion circuit, 5. matrix operation modules.
Specific embodiment
Core of the invention is to provide a kind of photodetection chip.Conventionally, as the light based on CMOS technology
The aperture opening ratio of electric detection chip is lower, so that the photosensitive area of photodetection chip is usually insufficient, causes its sensitivity lower.
And a kind of photodetection chip provided by the present invention, including substrate, n-type diffusion layer and p-diffusion layer；N-shaped expands
It dissipates layer and p-diffusion layer is alternately distributed along the thickness direction of substrate, formed in the substrate along the more of substrate thickness directional spreding
A pn-junction.Each pn-junction can regard a photosensitive diode, any one pn-junction can light based on the received at work
Corresponding electric current is generated, to detect according to the electric current to received optical signal.It is more due to being superimposed in vertical direction
A pn-junction, and each pn-junction can make induction to the light of acquisition, so that photodetection chip is photosensitive at one of script
Multilayer photosensitive area is superimposed on area, so that photodetection chip has biggish photosensitive area.
Simultaneously as be superimposed multiple pn-junctions in vertical direction so that in photodetection chip photogenerated current increase
It is to be increased with the least squares of area, but the increase of noise is increased in a manner of the square root of area, so as to increase light
Ratio between raw electric current and noise, i.e. signal-to-noise ratio.Also, the thickness direction due to pn-junction along substrate is distributed, and extraneous different
The light of wavelength can mainly be penetrated at the pn-junction of different depth to be absorbed by different pn-junctions and generate corresponding electric current.Phase
Than in only with the photodetection chip of single pn-junction, through-thickness, which stacks multiple pn-junctions, can effectively extend photodetection core
The spectral response range of piece.Multiple pn-junction through-thickness, which are stacked, can also avoid causing because the chromatography of light source is unevenly distributed
The interference to optical signal detecting.
In order to enable those skilled in the art to better understand the solution of the present invention, with reference to the accompanying drawings and detailed description
The present invention is described in further detail.Obviously, described embodiments are only a part of the embodiments of the present invention, rather than
Whole embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not making creative work premise
Under every other embodiment obtained, shall fall within the protection scope of the present invention.
Referring to FIG. 1, Fig. 1 is a kind of structural block diagram of photodetection chip provided by the embodiment of the present invention.
Referring to Fig. 1, in embodiments of the present invention, the photodetection chip includes that substrate 1, n-type diffusion layer 21 and p-type expand
Dissipate layer 22；The n-type diffusion layer 21 and the p-diffusion layer 22 are alternately distributed along the thickness direction of the substrate 1, described
The multiple pn-junctions 2 being distributed along 1 thickness direction of substrate are formed in substrate 1；The diffusion depth of any n-type diffusion layer 21 is equal
Less than the diffusion depth of the adjacent lower section p-diffusion layer 22, the diffusion depth of any p-diffusion layer 22 is respectively less than adjacent
The diffusion depth of the lower section n-type diffusion layer 21；The diffusion area of any n-type diffusion layer 21 is respectively less than described in adjacent lower section
The diffusion area of p-diffusion layer 22, the diffusion area of any p-diffusion layer 22 are respectively less than the adjacent lower section N-shaped diffusion
The diffusion area of layer 21；The projection of any n-type diffusion layer 21 in the horizontal direction covers 22 edge of p-diffusion layer adjacent and above
The projection of horizontal direction, the projection of any p-diffusion layer 22 in the horizontal direction cover 21 edge of n-type diffusion layer adjacent and above
The projection of horizontal direction；Along the last one described pn-junction of ambient direction of illumination for responding infrared ray in the pn-junction.
Above-mentioned substrate 1 mainly plays a supportive role, and above-mentioned n-type diffusion layer 21 and p-diffusion layer 22 are required to the thickness along substrate 1
Degree direction is disposed alternately at 1 surface of substrate, to form the multiple pn-junctions 2 being arranged along 1 thickness direction of substrate.The material of above-mentioned substrate 1
Matter in embodiments of the present invention and is not specifically limited, depending on the circumstances.Under normal conditions, in embodiments of the present invention
Stating substrate 1 is usually silicon substrate 1, due to the pn-junction 2 being made by silicon substrate 1 forbidden bandwidth can with covering visible light and
Near infrared light, so that photodetection chip provided by the embodiment of the present invention can be applied to most scenes.Meanwhile
The preparation that can realize photodetection chip by CMOS preparation process based on silicon substrate 1, to realize photodetection chip
It is integrated.It should be noted that substrate 1 is in the lowest level of photodetection chip in embodiments of the present invention, and n-type diffusion layer 21
And p-diffusion layer 22 is usually set gradually in the upper surface through-thickness of substrate 1.
Above-mentioned n-type diffusion layer 21 and p-diffusion layer 22 can be alternately distributed along the thickness direction of substrate 1, and n-type diffusion layer
21 may be constructed a pn-junction 2 with p-diffusion layer 22, convert optical signals into electric signal to realize.Wherein, p-diffusion layer 22
The impurity adulterated is usually B (boron), Ge (germanium), As (arsenic), and the impurity that n-type diffusion layer 21 is adulterated is usually P (phosphorus), C
(carbon).The dopant species and doping concentration specifically adulterated in relation to n-type doping layer and p-type doping layer can be according to the actual situation
Self-setting is not specifically limited herein.
In embodiments of the present invention, since n-type diffusion layer 21 and p-diffusion layer 22 can be alternately distributed, in order to enable by n
The pn-junction that type diffusion layer 21 and p-diffusion layer 22 are constituted is stacked along the thickness direction of substrate 1, any of the above-described n-type diffusion layer 21
Diffusion depth needs to be less than the diffusion depth of adjacent lower section p-diffusion layer 22, while the diffusion depth of any p-diffusion layer 22 is equal
Less than the diffusion depth of the adjacent lower section n-type diffusion layer 21.It should be noted that the above-mentioned diffusion depth i.e. diffusion layer distance
The distance of upper surface of substrate, and the diffusion layer for being located at top layer is then zero at a distance from upper surface of substrate.Above-mentioned adjacent lower section p-type
Diffusion layer 22 is to be located at the n-type diffusion layer 21 towards 1 side of substrate in the p-diffusion layer 22 adjacent with a certain n-type diffusion layer 21
P-diffusion layer 22.Similarly, in adjacent lower section n-type diffusion layer 21 n-type diffusion layer 21 i.e. adjacent with a certain p-diffusion layer 22,
Positioned at the p-diffusion layer 22 towards the n-type diffusion layer 21 of one side of substrate.
In embodiments of the present invention, above-mentioned n-type diffusion layer 21 and p be can receive for the ease of other component or module
Electric current caused by type diffusion layer 22, the diffusion area of any of the above-described n-type diffusion layer 21 are respectively less than adjacent lower section p-diffusion layer 22
Diffusion area, the diffusion area of any p-diffusion layer 22 is respectively less than the diffusion area of adjacent lower section n-type diffusion layer 21；Exist
The diffusion area of diffusion layer is successively reduced from top to bottom in the embodiment of the present invention.It should be noted that above-mentioned diffusion area expands
The projected area of scattered layer in the horizontal direction, the diffusion area of diffusion layer is successively reduced from top to bottom in embodiments of the present invention,
Different diffusion layers can be exposed in the upper surface of substrate 1, consequently facilitating other component or module can be in the upper surfaces of substrate 1
Directly acquire electric current caused by different diffusion layers.It is understood that any n-type diffusion layer 21 is logical in embodiments of the present invention
It is frequently located in the center of adjacent lower section p-diffusion layer 22, and any p-diffusion layer 22 is usually located at adjacent lower section n-type diffusion layer 21
Center.
It should be noted that in order to enable the pn-junction 2 being arranged in substrate 1 all along substrate 1 thickness direction stack, it is above-mentioned
The projection of any n-type diffusion layer 21 in the horizontal direction covers the projection of p-diffusion layer 22 in the horizontal direction adjacent and above,
The projection of any p-diffusion layer 22 in the horizontal direction covers the projection of n-type diffusion layer 21 in the horizontal direction adjacent and above；
The i.e. a certain only possible p-diffusion layer 22 adjacent with the n-type diffusion layer 21 of n-type diffusion layer 21 is in contact to form pn-junction 2, while certain
The only possible n-type diffusion layer 21 adjacent with the p-diffusion layer 22 of one p-diffusion layer 22 is in contact to form pn-junction 2.In other words,
A certain diffusion layer can not cross-layer and the structures such as non-conterminous diffusion layer formation pn-junction 2 or height knot in embodiments of the present invention.On
It states in the p-diffusion layer 22 that p-diffusion layer 22 is i.e. adjacent with a certain n-type diffusion layer 21 adjacent and above, is located at the n-type diffusion layer 21
P-diffusion layer 22 backwards to 1 side of substrate.Similarly, n-type diffusion layer 21 is the n adjacent with a certain p-diffusion layer 22 adjacent and above
In type diffusion layer 21, positioned at the p-diffusion layer 22 backwards to the n-type diffusion layer 21 of 1 side of substrate.
It should also be emphasized that since multiple pn-junctions 2 in embodiments of the present invention vertically stack, so that no matter outer
The incident angle of boundary's light is how, and the incidence angle of ambient received by each pn-junction 2 is all the same, at this time can to avoid because
The chromatography of light source is unevenly distributed and causes the interference to optical signal detecting.
In embodiments of the present invention, ambient can inject above-mentioned pn-junction 2 from forward direction, that is, be not through substrate 1 and inject pn
Knot 2；It is also possible to from above-mentioned pn-junction 2 is injected backwards, i.e., injects pn-junction 2 through substrate 1.No matter how incident ambient is, In
Along the last one pn-junction 2 of ambient direction of illumination for responding infrared ray in the embodiment of the present invention, i.e., the pn-junction 2 is main right
The light that wavelength is in infrared ray is responded, and generates corresponding electric current.Correspondingly, in embodiments of the present invention along ambient light
First pn-junction 2 of line direction of illumination is commonly used in responding to visible light line.
It should be noted that any of the above-described pn-junction 2 not only responds the light of a wavelength, any pn-junction 2 is
The light of multiple wavelength can be responded.But it can be mainly to the light of a certain corresponding wavelength positioned at the pn-junction of different depth 2
Responded, positioned at the pn-junction 2 of different depth the light of different wave length can be carried out primarily responsive to.That is, in the embodiment of the present invention
In the electric current that is exported of any pn-junction 2 be to carry out responding obtained result to multiple wavelength lights.But due to any pn-junction 2
Only primarily responsive to the light of a wavelength, the electric current that different pn-junctions 2 export is done by ratio method and is compared, can be arranged by relative value
Except above-mentioned interference.
A kind of photodetection chip provided by the embodiment of the present invention, including substrate 1, n-type diffusion layer 21 and p-diffusion layer
22；N-type diffusion layer 21 and p-diffusion layer 22 are alternately distributed along the thickness direction of substrate 1, thick along substrate 1 to be formed in substrate 1
Spend multiple pn-junctions 2 of directional spreding.Each pn-junction 2 can regard a photosensitive diode, any one pn-junction 2 is equal at work
Corresponding electric current can be generated by light based on the received, to detect according to the electric current to received optical signal.Due to hanging down
Histogram has been superimposed multiple pn-junctions 2 upwards, and each pn-junction 2 can make induction to the light of acquisition, so that photodetection core
Piece has been superimposed multilayer photosensitive area on a photosensitive area of script, so that photodetection chip is with biggish photosensitive
Area.
Simultaneously as be superimposed multiple pn-junctions 2 in vertical direction so that in photodetection chip photogenerated current increase
It is to be increased with the least squares of area, but the increase of noise is increased in a manner of the square root of area, so as to increase light
Ratio between raw electric current and noise, i.e. signal-to-noise ratio.Also, the thickness direction due to pn-junction 2 along substrate 1 is distributed, and the external world is not
The light of co-wavelength can mainly be penetrated at the pn-junction 2 of different depth to be absorbed by different pn-junctions 2 and generate corresponding electricity
Stream.Compared to only with the photodetection chip of single pn-junction 2, through-thickness, which stacks multiple pn-junctions 2, can effectively extend light
The spectral response range of electric detection chip.Multiple 2 through-thickness of pn-junction, which are stacked, can also avoid the chromatography point because of light source
Interference caused by cloth is uneven to optical signal detecting.
It will be done in following inventive embodiments in detail in relation to a kind of specific structure of photodetection chip provided by the invention
It introduces.
Fig. 2 and Fig. 3 is please referred to, Fig. 2 is a kind of knot of specific photodetection chip provided by the embodiment of the present invention
Structure schematic diagram；Fig. 3 is the structural schematic diagram of the specific photodetection chip of another kind provided by the embodiment of the present invention.
It is different from foregoing invention embodiment, the embodiment of the present invention is on the basis of foregoing invention embodiment, further
The structure of photodetection chip is specifically limited.Remaining content is described in detail in foregoing invention embodiment,
It is no longer repeated herein.
In embodiments of the present invention, it will thus provide two kinds of photodetection chips, the stack manner of two kinds of photodetection chips
Difference is different so as to cause the calculation of electric current in use.But two kinds of photodetection chips can be effective
Increase the photosensitive area of photodetection chip and reduces the signal-to-noise ratio of photodetection chip.
The first, referring to fig. 2, the photodetection chip includes that multiple n-type diffusion layers 21 or multiple p-types expand
Dissipate layer 22；Any n-type diffusion layer 21 p-diffusion layer 22 adjacent with one forms pn-junction 2, with another adjacent p-type
Insulating layer 23 is provided between diffusion layer 22.
In the photodetection chip of above structure, adjacent pn-junction 2 is mutually isolated by insulating layer 23, so that any one layer
N-type diffusion layer 21 or p-diffusion layer 22 can only export the electric current of a pn-junction 2 generation, consequently facilitating to n-type diffusion layer 21 or p
The electric current that type diffusion layer 22 exports is calculated, so as to simplify the electric current exported to the photodetection chip of this structure
Calculation.
Second, referring to Fig. 3, any n-type diffusion layer 21 forms pn-junction 2 with the adjacent p-diffusion layer 22.
I.e. compared to the first structure, setting insulating layer 23 is not needed in the structure of this kind of photoelectric detector chip, but any phase
It will form pn-junction 2 between adjacent n-type diffusion layer 21 and p-diffusion layer 22；Such as three pn-junctions 2 are if desired formed, do not include
Substrate 1 only needs to be arranged three layers of diffusion layer, can be significantly reduced the thickness of photodetection chip and manufacture into
This.
It should be noted that in this kind of photodetection chip, other than being located at the diffusion layer of top layer, remaining lower layer
The electric current that diffusion layer is exported is electric current caused by two 2 collective effects of pn-junction, needs elder generation in calculating process accordingly
The current value exported according to the diffusion layer for being located at top layer calculates the current value of generation corresponding to each pn-junction 2, then realizes
Optical signal is detected according to current value.
The embodiment of the present invention, which has altogether, provides the photodetection chip of two kinds of different stacked structures, can effectively increase photoelectricity
The photosensitive area of detection chip and the signal-to-noise ratio and other effects for improving photodetection chip.
It will be done in following inventive embodiments in detail in relation to a kind of specific structure of photodetection chip provided by the invention
It introduces.
Fig. 4 and Fig. 5 is please referred to, Fig. 4 is another specific photodetection chip provided by the embodiment of the present invention
Structural schematic diagram；Fig. 5 for pn-junction institute each in Fig. 4 response wave length distribution map.
It is different from foregoing invention embodiment, the embodiment of the present invention is on the basis of foregoing invention embodiment, further
The structure of photodetection chip is specifically limited.Remaining content is described in detail in foregoing invention embodiment,
It is no longer repeated herein.
In embodiments of the present invention, altogether setting there are four pn-junction 2, aforementioned four pn-junction 2 primarily responsive to optical wavelength
Range is usually required from visible light Uniform covers near infrared light.Under normal conditions, first three along ambient incident direction is a
Pn-junction 2 primarily responsive to optical wavelength range covering visible light, and it is main along the institute of the 4th pn-junction of ambient incident direction 2
The optical wavelength range of response is near infrared light.
Specifically, in embodiments of the present invention, the substrate 1 is p-substrate 1, the photodetector includes being located at institute
State first n-type diffusion layer 211 on 1 surface of substrate；Positioned at first n-type diffusion layer 211 backwards to 1 one side surface of substrate
First p-diffusion layer 221；Positioned at first p-diffusion layer 221 backwards to the second n-type diffusion layer of 1 one side surface of substrate
212；Positioned at second n-type diffusion layer 212 backwards to the second p-diffusion layer 222 of 1 one side surface of substrate.
In embodiments of the present invention, above-mentioned second of photodetection chip structure is specifically selected, substrate 1 and four are passed through
Diffusion layer forms four pn-junctions 2.Specifically, above-mentioned substrate 1 is p-substrate 1, the surface of p-substrate 1 is provided with the first N-shaped
Diffusion layer 211, to form a pn-junction 2 between the first n-type diffusion layer 211 and p-substrate 1；First p-diffusion layer 221 is located at
First n-type diffusion layer, 211 surface, to form a pn-junction 2 between the first n-type diffusion layer 211 and the first p-diffusion layer 221；The
Two n-type diffusion layers 212 are located at 221 surface of the first p-diffusion layer, in the second n-type diffusion layer 212 and the first p-diffusion layer 221
Between form a pn-junction 2；Second p-diffusion layer 222 is located at 212 surface of the second n-type diffusion layer, in the second n-type diffusion layer 212
A pn-junction 2 is formed between the second p-diffusion layer 222, totally four pn-junctions 2.Under normal conditions, described for the convenience of production
The doping concentration of first n-type diffusion layer 211, the doping concentration of first p-diffusion layer 221, second n-type diffusion layer
212 doping concentration, the doping concentration of second p-diffusion layer 222 successively increase.Mixed positioned at the second p-type of layer the most
The doping concentration highest of diamicton, the doping concentration positioned at the first n-type doping layer of innermost layer are minimum.Related first n-type diffusion layer
211 doping concentration, the doping concentration of the first p-diffusion layer 221, the doping concentration of the second n-type diffusion layer 212 and the 2nd p
The specific value of the doping concentration of type diffusion layer 222 can sets itself according to the actual situation, be not specifically limited herein.
In use, p-substrate 1 is normally grounded, and electric current caused by four pn-junctions 2 is respectively I from top to bottom1Extremely
I4, and the current value of the second p-diffusion layer 222 output is I1, the current value of the second n-type diffusion layer 212 output is I1+I2, first
The current value that p-diffusion layer 221 exports is I2+I3, the current value of the first n-type diffusion layer 211 output is I3+I4, by that will measure
Corresponding subtract each other of current value current value corresponding to each pn-junction 2 can be obtained.
It should be noted that above-mentioned pn-junction 2 is distributed along the thickness direction of substrate 1, and ambient is irradiated to the present invention in fact
When applying photodetection chip provided by example, the light of different wave length can be penetrated mainly to different positions, on the whole, wavelength
The pn-junction 2 that short light can be mainly located at upper layer absorbs and is converted into corresponding electric signal, and the light of wavelength length can be led
The pn-junction 2 that be located at internal layer absorbs and is converted into corresponding electric signal.The i.e. above-mentioned pn-junction 2 in different location can be real
Now to the response of different wave length light, it is arranged without the photodetection chip surface provided by the embodiment of the present invention and filters
Mating plate.In embodiments of the present invention, for specific wavelength corresponding to different pn-junctions 2 can sets itself according to the actual situation,
It is not specifically limited herein.
Referring to Fig. 5, from figure 5 it can be seen that the pn-junction 2 of different depth can mainly ring the light of a wavelength
It answers, but same pn-junction 2 can also respond the light of multiple wavelength.Under normal conditions, in embodiments of the present invention from outer
The wavelength of light corresponding to side to inside pn-junction 2 usually successively increases, and increases near infrared light from visible light；That is in Fig. 4 most
Upper layer pn-junction 2, secondary upper layer pn-junction, secondary lower layer's pn-junction, lowest level pn-junction successively increased primarily responsive to the wavelength of light, and cover
Visible light and near infrared light.
A kind of photodetection chip provided by the embodiment of the present invention can not change the practical light of photodetection chip
While area, the volume of photodetection chip is reduced, the micromation of photodetection chip is conducive to；It is sensed when being applied to RGB
Response of each pn-junction 2 to different wave length light can be realized when device under the premise of being not provided with optical filter；When applied to optics
Each pn-junction may be implemented when detecting microfluidic system respectively to detect the light wave of different-energy.
It will be done in following inventive embodiments in detail in relation to a kind of specific structure of photodetection chip provided by the invention
It introduces.
Referring to FIG. 6, Fig. 6 is a kind of structural block diagram of specific photodetection chip provided by the embodiment of the present invention.
It is different from foregoing invention embodiment, the embodiment of the present invention is on the basis of foregoing invention embodiment, further
The structure of photodetection chip is specifically limited.Remaining content is described in detail in foregoing invention embodiment,
It is no longer repeated herein.
Referring to Fig. 6, in embodiments of the present invention, the circuit of corresponding function can be integrated in photodetection chip, such as
Amplifying circuit 3, to guarantee that photodetection chip is with good performance.Specifically, in embodiments of the present invention, above-mentioned photoelectricity is visited
Surveying chip can also include the amplifying circuit 3 positioned at 1 surface of substrate；The n-type diffusion layer 21 and the p-diffusion layer 22
It is electrically connected with the input terminal of the amplifying circuit 3.
Since under normal conditions, electric current caused by above-mentioned each diffusion layer is very faint, need by 1 surface of substrate
Integrated amplifying circuit 3 amplifies electric current so that the electric current that diffusion layer generates can be identified with device processed.Related amplification electricity
The specific structure on road 3 can refer to the prior art, no longer be repeated herein.The above-mentioned amplifying circuit 3 for being integrated in 1 surface of substrate
Input terminal needs be all connected with above-mentioned n-type diffusion layer 21 and p-diffusion layer 22, to amplify electricity caused by each diffusion layer
Signal.
Specifically, above-mentioned amplifying circuit 3 may include low noise amplifier circuit and power amplification circuit, the low noise is put
The input terminal of big circuit is electrically connected with the n-type diffusion layer 21 and the p-diffusion layer 22；The input of the power amplification circuit
End is electrically connected with the output end of the low noise amplifier circuit.
Specific structure in relation to low noise amplifier circuit (LNA) and power amplification circuit (PA) can refer to the prior art,
It is no longer repeated herein.Specifically, amplify since low noise amplifier circuit has low-down noise usually as level-one,
I.e. above-mentioned n-type diffusion layer 21 is usually directly connected in the input terminal of low noise amplifier circuit with p-diffusion layer 22, and power is put
Big circuit mainly increases the power of electric signal, amplifies usually as afterbody, i.e., the output end of above-mentioned low noise amplifier circuit
It can be connect with the input terminal of power amplification circuit.
Further, the analog to digital conversion circuit positioned at 1 surface of substrate usually can be also set in embodiments of the present invention
4, the input terminal of analog-digital conversion circuit as described 4 is connect with the output end of the amplifying circuit 3.
The electric current as caused by above-mentioned each diffusion layer is usually continuous electric signal, i.e. analog signal.For the ease of
Processor is provided for the embodiments of the invention electric signal caused by photodetection chip and is identified, needs to turn by modulus
It changes circuit 4 and converts analog signals into the digital signal that processor can identify, so that subsequent processor is to each diffusion layer institute
The electric signal of generation is handled.Specific structure in relation to analog to digital conversion circuit 4 can refer to the prior art, no longer carry out herein
It repeats.In embodiments of the present invention, above-mentioned analog to digital conversion circuit 4 generally includes power frequency conversion circuit, will pass through amplification
The electric signal that circuit 3 amplifies is converted into frequency signal, so that processor identifies the frequency signal.
Preferably, in embodiments of the present invention, photodetection chip can also include matrix operation module 5, institute
The output end for stating the input terminal connection analog-digital conversion circuit as described 4 of matrix operation module 5 is raw to obtain analog-digital conversion circuit as described 4
At digital signal；The matrix operation module 5 is used to calculate correspondence according to the digital signal by matrix operation mode
The pn-junction 2 receives the optical signal parameters of light.
The light as acquired in pn-junction 2 in embodiments of the present invention is usually to mix the light being formed by stacking by multiple light sources
Signal, the electric signal that corresponding above-mentioned each pn-junction 2 is exported are also that corresponding multiple light sources mix the optical signal being formed by stacking.For
Photodetection chip provided by through the embodiment of the present invention identifies the respective spectrum of each arbitrary source, of the invention real
It applies and the digital signal exported by 5 logarithm analog conversion circuit 4 of matrix operation module is needed to be calculated in example.Specifically, above-mentioned
The input terminal of matrix operation module 5 needs to connect the output end of D/A converting circuit 4 to obtain the number of the output of D/A converting circuit 4
Word signal, and matrix operation module 5 specifically can calculate corresponding photoelectricity according to above-mentioned digital signal by matrix operation mode and visit
The optical signal parameters that pn-junction 2 in chip receives light are surveyed, each respective spectrum of arbitrary source in mixed light source can be specifically calculated
Parameter.In relation to matrix operation module 5, the setting of specific coefficient and matrix size can be according to practical feelings in calculating process
Condition sets itself, is no longer repeated herein.
A kind of photodetection chip provided by the embodiment of the present invention, can in substrate 1 integrated amplifier 3 and mould
Number conversion circuit 4, electric signal caused by each doped layer to be amplified and is converted into what processor can identify
Digital signal；Each respective spectrum of arbitrary source in mixing light source can be calculated by matrix operation module 5.
The present invention also provides a kind of photodetectors, including photodetection core provided by any of the above-described inventive embodiments
Photodetection chip provided by multiple foregoing invention embodiments can be arranged in piece in photodetector under normal conditions, or
Say it is that multiple 2 stacked structures of pn-junction introduced such as above-mentioned inventive embodiments are provided in a photodetection chip, so as to
Detection and discriminance analysis are carried out to ambient.Remaining structure of related photodetector can refer to the prior art, herein
No longer repeated.
The photodetection chip as provided by foregoing invention embodiment can effectively increase the photosensitive of photodetection chip
Area and the signal-to-noise ratio and other effects for improving photodetection chip, photodetector provided by the corresponding embodiment of the present invention can
With biggish photosensitive area and higher signal-to-noise ratio and other effects.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with it is other
The difference of embodiment, same or similar part may refer to each other between each embodiment.For being filled disclosed in embodiment
For setting, since it is corresponded to the methods disclosed in the examples, so being described relatively simple, related place is referring to method part
Explanation.
Professional further appreciates that, unit described in conjunction with the examples disclosed in the embodiments of the present disclosure
And algorithm steps, can be realized with electronic hardware, computer software, or a combination of the two, in order to clearly demonstrate hardware and
The interchangeability of software generally describes each exemplary composition and step according to function in the above description.These
Function is implemented in hardware or software actually, the specific application and design constraint depending on technical solution.Profession
Technical staff can use different methods to achieve the described function each specific application, but this realization is not answered
Think beyond the scope of this invention.
The step of method described in conjunction with the examples disclosed in this document or algorithm, can directly be held with hardware, processor
The combination of capable software module or the two is implemented.Software module can be placed in random access memory (RAM), memory, read-only deposit
Reservoir (ROM), electrically programmable ROM, electrically erasable ROM, register, hard disk, moveable magnetic disc, CD-ROM or technology
In any other form of storage medium well known in field.
Finally, it is to be noted that, herein, relational terms such as first and second and the like be used merely to by
One entity or operation are distinguished with another entity or operation, without necessarily requiring or implying these entities or operation
Between there are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant meaning
Covering non-exclusive inclusion, so that the process, method, article or equipment for including a series of elements not only includes that
A little elements, but also including other elements that are not explicitly listed, or further include for this process, method, article or
The intrinsic element of equipment.In the absence of more restrictions, the element limited by sentence "including a ...", is not arranged
Except there is also other identical elements in the process, method, article or apparatus that includes the element.
A kind of photodetection chip provided by the present invention and a kind of photodetector are described in detail above.This
Apply that a specific example illustrates the principle and implementation of the invention in text, the explanation of above example is only intended to
It facilitates the understanding of the method and its core concept of the invention.It should be pointed out that for those skilled in the art, In
Without departing from the principles of the invention, can be with several improvements and modifications are made to the present invention, these improvement and modification are also fallen
Enter in the protection scope of the claims in the present invention.
Claims (10)
1. a kind of photodetection chip, which is characterized in that including substrate, n-type diffusion layer and p-diffusion layer；
The n-type diffusion layer and the p-diffusion layer are alternately distributed along the thickness direction of the substrate, with shape in the substrate
At multiple pn-junctions along the substrate thickness directional spreding；
The diffusion depth of any n-type diffusion layer is respectively less than the diffusion depth of the adjacent lower section p-diffusion layer, any described
The diffusion depth of p-diffusion layer is respectively less than the diffusion depth of the adjacent lower section n-type diffusion layer；Any n-type diffusion layer
Diffusion area is respectively less than the diffusion area of the adjacent lower section p-diffusion layer, and the diffusion area of any p-diffusion layer is small
In the diffusion area of the adjacent lower section n-type diffusion layer；The projection of any n-type diffusion layer in the horizontal direction covers adjacent
The projection of top p-diffusion layer in the horizontal direction, the projection of any p-diffusion layer in the horizontal direction cover adjacent and above
The projection of n-type diffusion layer in the horizontal direction；
Along the last one described pn-junction of ambient direction of illumination for responding infrared ray in the pn-junction.
2. photodetection chip according to claim 1, which is characterized in that the photodetection chip includes multiple described
N-type diffusion layer or multiple p-diffusion layers；Any n-type diffusion layer p-diffusion layer adjacent with one forms pn-junction,
Insulating layer is provided between another adjacent p-diffusion layer.
3. photodetection chip according to claim 1, which is characterized in that any n-type diffusion layer with it is adjacent
The p-diffusion layer forms pn-junction.
4. photodetection chip according to claim 3, which is characterized in that the substrate is p-substrate, and the photoelectricity is visited
Surveying device includes:
Positioned at the first n-type diffusion layer of the substrate surface；
Positioned at first n-type diffusion layer backwards to first p-diffusion layer on the one side of substrate surface；
Positioned at first p-diffusion layer backwards to second n-type diffusion layer on the one side of substrate surface；
Positioned at second n-type diffusion layer backwards to second p-diffusion layer on the one side of substrate surface.
5. photodetection chip according to claim 4, which is characterized in that the doping concentration of first n-type diffusion layer,
The doping concentration of first p-diffusion layer, the doping concentration of second n-type diffusion layer, second p-diffusion layer are mixed
Miscellaneous concentration successively increases.
6. according to claim 1 to photodetection chip described in any one of 5 claims, which is characterized in that further include being located at
The amplifying circuit of the substrate surface；The n-type diffusion layer and the p-diffusion layer are electric with the input terminal of the amplifying circuit
Connection.
7. photodetection chip according to claim 6, which is characterized in that the amplifying circuit includes low noise amplification electricity
Road and power amplification circuit, the input terminal of the low noise amplifier circuit are electrically connected with the n-type diffusion layer and the p-diffusion layer
It connects；The input terminal of the power amplification circuit is electrically connected with the output end of the low noise amplifier circuit.
8. photodetection chip according to claim 6, which is characterized in that further include the modulus positioned at the substrate surface
Conversion circuit, the input terminal of analog-digital conversion circuit as described are connect with the output end of the amplifying circuit.
9. photodetection chip according to claim 8, which is characterized in that further include matrix operation module, the matrix
The output end of the input terminal connection analog-digital conversion circuit as described of computing module is to obtain the number that analog-digital conversion circuit as described generates
Signal；
The matrix operation module is used for:
Calculate the optical signal parameters that the corresponding pn-junction receives light according to the digital signal by matrix operation mode.
10. a kind of photodetector, which is characterized in that visited including the photoelectricity as described in any one of claim 1 to 9 claim
Survey chip.
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