CN110445553A - A kind of 2 code devices of voltage-controlled Terahertz and method - Google Patents
A kind of 2 code devices of voltage-controlled Terahertz and method Download PDFInfo
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- CN110445553A CN110445553A CN201910795829.8A CN201910795829A CN110445553A CN 110445553 A CN110445553 A CN 110445553A CN 201910795829 A CN201910795829 A CN 201910795829A CN 110445553 A CN110445553 A CN 110445553A
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- 239000002184 metal Substances 0.000 claims abstract description 105
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- 239000004065 semiconductor Substances 0.000 claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 230000000737 periodic effect Effects 0.000 claims abstract description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 9
- 239000010980 sapphire Substances 0.000 claims description 9
- 238000000926 separation method Methods 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/516—Details of coding or modulation
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/90—Non-optical transmission systems, e.g. transmission systems employing non-photonic corpuscular radiation
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Abstract
The present invention proposes a kind of 2 encoders of voltage-controlled Terahertz, comprising: is respectively arranged at the square structure unit in periodic arrangement of the square shaped substrate two sides；The square structure unit includes metal structure and semiconductor structure；Semiconductor structure includes in the P-type semiconductor of cylindrical body and the N-type semiconductor in cylindrical body, and the bottom surface of N-type semiconductor is bonded with square shaped substrate, and P-type semiconductor is set on the N-type semiconductor, forms the PN junction in a rounded region；Metal structure includes the annular metallic layer fitted in square shaped substrate, the first metal electrode and the second metal electrode, and the first metal electrode of each metal structure is connected, and the second metal electrode of each metal structure is connected.The encoder and control terminal form coded system, by carrying out the dibit encoding function that THz wave is realized in independent voltage control to each metal electrode.The advantages that it is fast that the present invention can have coding rate, easy to operate and practical, with good application prospect.
Description
Technical field
The present invention relates to the Terahertz communications field, more particularly, to a kind of 2 code devices of voltage-controlled Terahertz and
System.
Background technique
Terahertz is the electromagnetic wave that frequency is 0.1THz~10THz, on electromagnetic spectrum between infrared between microwave.Benefit
The artificial adjustment to THz wave may be implemented with Meta Materials, Terahertz is as means of communication, compared to existing shortwave, microwave
Communication has higher transmission bandwidth and bigger channel capacity, and penetrability is stronger, and transmission directivity is more excellent, the peace of information transmission
Full property is opposite to be improved.With the increase to communication requirement, Terahertz communicates relevant technology and is badly in need of developing, and relevant communicator
Part is the emphasis of research.And between LEO and the star of high orbit space in communication, passed under vacuum condition without atmosphere
The limitation of defeated window, Terahertz communication have better application prospect.
It is reported that currently based on the control measures of Meta Materials use the metal structure of multi-layer three-dimension mostly, by many
Frequency-selective surfaces are constituted, this class formation proposes biggish challenge to manufacture craft, difficulty with higher and valence in manufacture
Lattice.In addition, also there is the scheme controlled by super surface THz wave, the knot in the face that overstaffs is controlled using programmable gate array
Structure is modulated the spatial pattern ai for the THz wave being irradiated on super surface, realizes multidigit number encoder.But the coding staff
The demand to optical path of case is stringent, because the directional diagram to electromagnetic wave is modulated, the position for needing to change receiver could be examined
Different encoded informations is surveyed, the short time is difficult to apply in Terahertz communication.There are also code segment devices by the way of mechanical
Coding-control is carried out, very big limitation of the code rate by mechanical structure is affected to the efficiency of Terahertz communication.
With the continuous development of the communication technology, in Terahertz communication aspects, urgent need want a kind of pair of manufacture craft it is of less demanding,
The Terahertz code devices that structure is simple, coding rate is fast, high-efficient.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of voltage-controlled Terahertzs 2
Position code devices and system may be implemented the dibit encoding function of THz wave, and have coding rate fast, and the response time is short
The advantages that.
In order to achieve the above objects and other related objects, the present invention provides a kind of 2 encoders of voltage-controlled Terahertz
Part, the code devices include:
It is respectively arranged at the square structure unit in periodic arrangement of the square shaped substrate two sides；
The square structure unit includes metal structure and semiconductor structure；
The semiconductor structure includes in the P-type semiconductor 310 of cylindrical body and the N-type semiconductor 31 in cylindrical body, the N
The bottom surface of type semiconductor is bonded with the square shaped substrate 2, and the P-type semiconductor is set on the N-type semiconductor, is formed one and is in
The PN junction of border circular areas；
The metal structure includes the annular metallic layer fitted in the square shaped substrate, the first metal electrode 39 and second
First metal electrode of metal electrode 35, each metal structure is connected, and the second metal electrode of each metal structure is connected；
The annular metallic layer is arranged around the semiconductor structure, the surface of the semiconductor structure or/and the ring
The surface of shape metal layer is provided with separation layer；
It is provided with two openings on the annular metallic layer, annular metallic layer is made to form the symmetrically arranged first arc-shaped gold
Belong to layer 311 and the second circular arc-shaped metal layer 33, the circular arc of the first circular arc-shaped metal layer and the second circular arc-shaped metal layer
It is minor arc；Extend shape to the direction far from semiconductor structure center at the highest point of the circular arc of the first circular arc-shaped metal layer
At first connecting portion 37 is provided with, the first connecting portion is connect with first metal electrode, the first circular arc-shaped metal layer
It extends to form towards the direction at semiconductor structure center at the highest point of circular arc and is provided with second connecting portion 38, second connection
Portion is inserted into the N-type semiconductor and is bonded with square shaped substrate；At the highest point of the circular arc of the second circular arc-shaped metal layer
It is extended to form to the direction far from semiconductor structure center and is provided with third interconnecting piece 36, the third interconnecting piece and described second
Metal electrode connects, and extends to form at the highest point of the circular arc of the second circular arc-shaped metal layer towards the direction at semiconductor structure center
It is provided with the 4th interconnecting piece 34, the 4th interconnecting piece fits in the side of the P-type semiconductor.
Optionally, the separation layer is silicon oxide layer.
Optionally, the square shaped substrate is Sapphire Substrate.
Optionally, the Sapphire Substrate with a thickness of 400~1000 microns, the side length of the structural unit is 5~500
Micron.
Optionally, a height of 1~2 micron of the semiconductor structure.
Optionally, the annular metallic layer thickness is less than the thickness of the N-type semiconductor.
Optionally, it is set to the micro- with a thickness of 0.1~0.3 of the annular metallic layer in the structural unit of square shaped substrate side
Rice, outer diameter are 40~500 microns, and internal diameter is 20~300 microns, and opening width is 4~100 microns.
Optionally, it is set to the micro- with a thickness of 0.1~0.3 of the annular metallic layer in the structural unit of the square shaped substrate other side
Rice, outer diameter are 50~500 microns, and internal diameter is 45~500 microns, and opening width is 4~100 microns.
In order to achieve the above objects and other related objects, the present invention provides a kind of 2 coding systems of voltage-controlled Terahertz
System, including the code devices and control terminal, the control terminal has the output of two-way voltage isolation, and every road output includes one
Anode and a cathode, two anodes are connected in the metal structure of one side of substrate, and two cathode are connected to the gold of the substrate other side
Belong in structure.
As described above, a kind of 2 code devices of voltage-controlled Terahertz of the invention and system, have below beneficial to effect
Fruit:
The invention proposes 2 code devices of voltage-controlled Terahertz for being suitable for the Terahertz communications field, well
Requirement needed for meeting Terahertz communication, because being controlled using IC circuit, the limit of coding rate depends on IC circuit
The transmitting physical limit, the signal frequency of IC circuit has at present up to GHz rank in coding rate and application aspect at present
There is good application prospect.In device architecture proposed by the present invention P-type semiconductor and N-type semiconductor using stepped construction in conjunction with,
The area coverage of PN junction is increased, the control effect of THz wave is obviously improved.
Detailed description of the invention
In order to which the present invention is further explained, described content, with reference to the accompanying drawing makees a specific embodiment of the invention
Further details of explanation.It should be appreciated that these attached drawings are only used as typical case, and it is not to be taken as to the scope of the present invention
It limits.
Fig. 1 is the front view of voltage-controlled 2 code devices of Terahertz in one embodiment of the invention；
Fig. 2 is the rearview of voltage-controlled 2 code devices of Terahertz in one embodiment of the invention；
Fig. 3 is the side view of voltage-controlled 2 code devices of Terahertz in one embodiment of the invention；
Fig. 4 is the top view of voltage-controlled 2 code devices of Terahertz in one embodiment of the invention；
Fig. 5 is the schematic diagram of structural unit in one embodiment of the invention；
Fig. 6 is the sectional view of Facad structure in one embodiment of the invention；
Fig. 7 is enlarged drawing at the A of Fig. 1 in one embodiment of the invention；
Fig. 8 is the schematic diagram of voltage-controlled 2 coded systems of Terahertz in one embodiment of the invention；
Fig. 9 is the schematic diagram I of 2 coding methods of voltage-controlled Terahertz in one embodiment of the invention.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.It should be noted that in the absence of conflict, following embodiment and implementation
Feature in example can be combined with each other.
It should be noted that illustrating the basic structure that only the invention is illustrated in a schematic way provided in following embodiment
Think, only shown in schema then with related component in the present invention rather than component count, shape and size when according to actual implementation
Draw, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its assembly layout kenel
It is likely more complexity.
Such as Fig. 1~7, a kind of 2 code devices of voltage-controlled Terahertz, which includes:
It is respectively arranged at the square structure unit in periodic arrangement of the square shaped substrate two sides；
The square structure unit includes metal structure and semiconductor structure；In the present embodiment, structural unit is pros
Shape.
The semiconductor structure includes in the P-type semiconductor 310 of circle ontology and the N-type semiconductor 31 in cylindrical body, the N
The bottom surface of type semiconductor is bonded with the square shaped substrate 2, and the P-type semiconductor is set on the N-type semiconductor, is formed one and is in
The PN junction of border circular areas；
The metal structure includes the annular metallic layer fitted in the square shaped substrate, the first metal electrode 39 and second
First metal electrode of metal electrode 35, each metal structure is connected, and the second metal electrode of each metal structure is connected；
It in some embodiments, further include two metal electrodes, such as Fig. 7, upper and lower each setting one, one of them is with the
The connection of one metal electrode, another connect with the second metal electrode.
The annular metallic layer is arranged around the semiconductor structure, the surface of the semiconductor structure or/and the ring
The surface of shape metal layer is provided with separation layer；In one embodiment, the material of separation layer can for silicon oxide layer (it is very thin,
Only several nanometers) setting separation layer, semiconductor and annular metallic layer can be electrically isolated.
It is provided with two openings on the annular metallic layer, annular metallic layer is made to form the symmetrically arranged first arc-shaped gold
Belong to layer 311 and the second circular arc-shaped metal layer 33, the circular arc of the first circular arc-shaped metal layer and the second circular arc-shaped metal layer
It is minor arc；Extend shape to the direction far from semiconductor structure center at the highest point of the circular arc of the first circular arc-shaped metal layer
At first connecting portion 37 is provided with, the first connecting portion is connect with first metal electrode, the first circular arc-shaped metal layer
It extends to form towards the direction at semiconductor structure center at the highest point of circular arc and is provided with second connecting portion 38, second connection
Portion is inserted into the N-type semiconductor and is bonded with square shaped substrate；At the highest point of the circular arc of the second circular arc-shaped metal layer
It is extended to form to the direction far from semiconductor structure center and is provided with third interconnecting piece 36, the third interconnecting piece and described second
Metal electrode connects, and extends to form at the highest point of the circular arc of the second circular arc-shaped metal layer towards the direction at semiconductor structure center
It is provided with the 4th interconnecting piece 34, the 4th interconnecting piece fits in the side of the P-type semiconductor.
In an embodiment, the thickness of the second connecting portion is less than the thickness of the first connecting portion.
Since the code devices that the present embodiment proposes require incident terahertz polarization direction, in encoder
The side upper right corner of part is equipped with square marks 1, and when use should be noted that installation direction is correct.
In an embodiment, the square shaped substrate is Sapphire Substrate.
In an embodiment, the Sapphire Substrate with a thickness of 400~1000 microns, the side length of the structural unit is
5~500 microns.
In an embodiment, a height of 0.2~2 micron of the semiconductor structure.
In an embodiment, the annular metallic layer thickness is less than the thickness of the N-type semiconductor.
In an embodiment, be set to the annular metallic layer in the structural unit of square shaped substrate side with a thickness of 0.1~
0.3 micron, outer diameter is 40~500 microns, and internal diameter is 20~300 microns, and opening width is 4~100 microns.
In an embodiment, be set to the annular metallic layer in the structural unit of the square shaped substrate other side with a thickness of 0.1
~0.3 micron, outer diameter is 50~500 microns, and internal diameter is 45~500 microns, and opening width is 4~100 microns.
In an embodiment, the Sapphire Substrate with a thickness of 100~1000 microns, be set to knot described in one side of substrate
The side length of structure unit is 100 microns, and the side length of the other side is 200 microns.A height of 0.5 micron of the semiconductor structure.It is described
Annular metallic layer thickness is less than the thickness of the N-type semiconductor.Be set to the annular metallic layer of square shaped substrate side with a thickness of
0.2 micron, outer diameter is 110 microns, and internal diameter is 90 microns, and opening width is 8 microns, and the length of first connecting portion is 21 micro-
Rice.Be set to the annular metallic layer of the square shaped substrate other side with a thickness of 0.2 micron, outer diameter is 60 microns, and internal diameter is 50 micro-
Rice, opening width are 10 microns, and the length of third interconnecting piece is 7 microns.In the present embodiment, it is set to the structure of one side of substrate
The outer/inner diameter of annular metallic layer in unit is respectively 60/50 micron, 100 microns of substrate, is set to the structure of the substrate other side
The structure combination of 200 microns of outer/inner diameter 110/90, the substrate of annular metallic layer in unit has reached optimal effect.The knot
Two resonance frequencies of structure building are respectively 0.43THz, 0.81THz.
The present embodiment also provides another describing mode and code devices is described.A kind of code devices, comprising:
Sapphire Substrate；
" |-(- " and its metal structure formed about " -)-| " of y-axis rotational symmetry are similar to by shape.Two
Semi-circular shape part in symmetrical structure can be regarded as the annulus that a center is located at structural unit center, along the y-axis direction
Some parts composition is cut out, this structure is called two-way opened choma.Longitudinally extension metal strip " | " plays one for two sides in structure
Connection function between unit, the part are continuous between the unit of the direction y.The left part "-" of left side two-way opened choma
It is the metal with split ring uniform thickness, split ring and outside metal is linked together, the part "-" on the right side of split ring is to be close to lining
Bottom surface, thickness are thin much compared to the thickness of two-way opened choma, and about 1/5.The y-axis of left side structure and the structure on right side about unit
Symmetrically.
Shape is the semiconductor structure of cylindrical body, which can be divide into upper part and lower part according to the element type mixed,
Respectively p-type mixes conductor and N-type mixes semiconductor.Wherein the bottom surface of N-type semiconductor is directly fitted with substrate, left side metal knot
In the N-type semiconductor of the "-" type structure insertion lower layer of structure.The top of N-type semiconductor is close in the bottom of upper layer P-type semiconductor,
On the interface of P-type semiconductor and N-type semiconductor, because of diffusion, a circle is formed between two kinds of semiconductors
The PN junction in domain, the region that the entire metal ring of the area covering of PN junction fences up.The top "-" shape metal strip of right side metal strip
It is tightly attached to the top surface of P-type semiconductor.Metal and all Ohmic contacts of semiconductor contact, avoid Schottky contacts in structure.
Above-mentioned metal structure and semiconductor structure collectively constitutes a structural unit of device proposed by the present invention.
Structural unit is subjected to period extension along the direction x of xyz coordinate system and the direction y, forms the compound super table of device
Face.Device front and the back side structure be it is similar, take different size and form, be able to the terahertz to different frequency
Hereby wave is regulated and controled.
In the two sides in the y-axis direction of device surface, there are the bullion structure for being close to device surface in the x-direction, length
More slightly shorter than the side length of device, width is about 2~3 cell sizes.Above metal strip structure and device surface on the left of unit
Metal structure be connected, the metal strip structure on the right side of unit is connected with the metal strip structure below device surface.It is logical
This connection type is crossed, each structural unit is linked together by mode in parallel in similar circuit.
The foregoing describe device architectures of the invention.
In an embodiment, the square shaped substrate is Sapphire Substrate.
In an embodiment, the Sapphire Substrate with a thickness of 400~1000 microns, the side length of the square shaped substrate is
5~500 microns.
In an embodiment, a height of 0.2~2 micron of the semiconductor structure.
In an embodiment, the annular metallic layer thickness is less than the thickness of the N-type semiconductor.
In an embodiment, be set to the positive metal ring of square shaped substrate with a thickness of 0.1~0.3 micron, outer diameter
It is 40~500 microns, internal diameter is 20~300 microns, and opening width is 4~100 microns.
In an embodiment, be set to the metal ring at the square shaped substrate back side with a thickness of 0.1~0.3 micron, outer diameter
It is 50~500 microns, internal diameter is 45~500 microns, and opening width is 4~100 microns.
In one embodiment, substrate with a thickness of 1000 microns, 0.5 micron of the thickness of metal, semiconductor portions thickness
Be 1.5 microns, 100 microns of front single structure unit side length, 200 microns of back side single structure unit side length.Front metal
The outer diameter of annulus, internal diameter are respectively 60 microns, and 50 microns, 8 microns of opening width, lateral coupling part short side is 6 microns long, indulges
To the of same size of coupling part and unit；The outer diameter of back metal annulus, internal diameter are respectively 110 microns, and 90 microns, opening is wide
10 microns of degree, lateral coupling part short side is 8 microns long, and longitudinally connected part is identical as the width of unit.The two of structure building
A resonance frequency is respectively 0.43THz, 0.81THz.
In some embodiments, as shown in figure 8, a kind of 2 coded systems of voltage-controlled Terahertz, including the volume
Code device and control terminal, the control terminal have the output of two-way voltage isolation, and every road output includes an anode and a cathode, and two
A anode is connected in the metal structure of one side of substrate, and two cathode are connected in the metal structure of the substrate other side.
Control terminal is an IC circuit, can be but not limited to FPGA, ARM, DSP etc..
In some embodiments, a kind of method of coding is provided, through control terminal on encoder side and the other side
Metal structure applies voltage,
Apply voltage by metal structure of the control terminal on encoder side and the other side,
When applying forward voltage to the metal structure of side, PN junction conducting, THz wave of the code devices to 0.43THz
Conducting；
When applying negative voltage to the metal structure of side, PN junction cut-off, THz wave of the code devices to 0.43THz
It blocks；
When applying forward voltage to the metal structure of the other side, PN junction conducting, Terahertz of the code devices to 0.81THz
Waveguide is logical；
When applying negative voltage to the metal structure of the other side, PN junction cut-off, Terahertz of the code devices to 0.81THz
Wave resistance is disconnected；
When applying negative voltage to the metal structure of side, the metal structure of the other side applies negative voltage, is encoded
00；
When applying negative voltage to the metal structure of side, the metal structure of the other side applies forward voltage, is encoded
01；
When applying forward voltage to the metal structure of side, the metal structure of the other side applies negative voltage, is encoded
10；
When applying forward voltage to the metal structure of side, the metal structure of the other side applies forward voltage, is encoded
11。
Encoding scheme proposed by the present invention regulates and controls the THz wave of different frequency respectively, and then realizes that multidigit is compiled
Code.
The invention proposes the code devices for being suitable for the Terahertz communications field, are met needed for Terahertz communication well
Requirement because being controlled using IC circuit, the limit of coding rate depends on the transmitting physical limit of IC circuit, at present IC
The signal frequency of circuit up to GHz rank, has a good application prospect at present in coding rate and application aspect.This
Outside, by means of mature photolithography and ion etching technology, do not have difficulty, and price phase in the production of device
To cheap.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (9)
1. a kind of 2 code devices of voltage-controlled Terahertz, which is characterized in that the code devices include:
It is respectively arranged at the square structure unit in periodic arrangement of the square shaped substrate two sides；
The square structure unit includes metal structure and semiconductor structure；
The semiconductor structure includes in the P-type semiconductor (310) of cylindrical body and the N-type semiconductor (31) in cylindrical body, the N
The bottom surface of type semiconductor is bonded with the square shaped substrate (2), and the P-type semiconductor is set on the N-type semiconductor, forms one
The PN junction in rounded region；
The metal structure includes the annular metallic layer fitted in the square shaped substrate, the first metal electrode (39) and the second gold medal
Belong to electrode (35), the first metal electrode of each metal structure is connected, and the second metal electrode of each metal structure is connected；
The annular metallic layer is arranged around the semiconductor structure, the surface of the semiconductor structure or/and the annular gold
The surface for belonging to layer is provided with separation layer；
It is provided with two openings on the annular metallic layer, annular metallic layer is made to form symmetrically arranged first circular arc-shaped metal layer
(311) and the second circular arc-shaped metal layer (33), the circular arc of the first circular arc-shaped metal layer and the second circular arc-shaped metal layer
It is minor arc；Extend shape to the direction far from semiconductor structure center at the highest point of the circular arc of the first circular arc-shaped metal layer
At being provided with first connecting portion (37), the first connecting portion is connect with first metal electrode, the first circular arc-shaped metal layer
Circular arc highest point at extend to form and be provided with second connecting portion (38) towards the direction at semiconductor structure center, described second
Interconnecting piece is inserted into the N-type semiconductor and is bonded with square shaped substrate；The highest of the circular arc of the second circular arc-shaped metal layer
It is extended to form at point to the direction far from semiconductor structure center and is provided with third interconnecting piece (36), the third interconnecting piece and institute
The connection of the second metal electrode is stated, is prolonged at the highest point of the circular arc of the second circular arc-shaped metal layer towards the direction at semiconductor structure center
It stretches to be formed and is provided with the 4th interconnecting piece (34), the 4th interconnecting piece fits in the side of the P-type semiconductor.
2. a kind of 2 code devices of voltage-controlled Terahertz according to claim 1, which is characterized in that the isolation
For silicon oxide layer.
3. a kind of 2 code devices of voltage-controlled Terahertz according to claim 1, which is characterized in that described rectangular
Substrate is Sapphire Substrate.
4. a kind of 2 code devices of voltage-controlled Terahertz according to claim 3, which is characterized in that described blue precious
Stone lining bottom with a thickness of 400~1000 microns, the side length of the structural unit is 5~500 microns.
5. a kind of 2 code devices of voltage-controlled Terahertz according to claim 1, which is characterized in that described partly to lead
A height of 1~2 micron of body structure.
6. a kind of 2 code devices of voltage-controlled Terahertz according to claim 1, which is characterized in that the annular
Metal layer thickness is less than the thickness of the N-type semiconductor.
7. a kind of 2 code devices of voltage-controlled Terahertz according to claim 1, which is characterized in that the side of being set to
Annular metallic layer in the structural unit of shape one side of substrate with a thickness of 0.1~0.3 micron, outer diameter is 40~500 microns, interior
Diameter is 20~300 microns, and opening width is 4~100 microns.
8. a kind of 2 code devices of voltage-controlled Terahertz according to claim 1, which is characterized in that the side of being set to
Annular metallic layer in the structural unit of the shape substrate other side with a thickness of 0.1~0.3 micron, outer diameter is 50~500 microns,
Internal diameter is 45~500 microns, and opening width is 4~100 microns.
9. a kind of 2 coded systems of voltage-controlled Terahertz, which is characterized in that including such as claim 1~8 any one institute
The code devices and control terminal stated, the control terminal have the output of two-way voltage isolation, and every road output includes an anode and one
Cathode, two anodes are connected in the metal structure of one side of substrate, and two cathode are connected in the metal structure of the substrate other side.
Priority Applications (1)
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