CN110443345A - A method of regulation nano molecular neural network electric pulse provides behavior - Google Patents

A method of regulation nano molecular neural network electric pulse provides behavior Download PDF

Info

Publication number
CN110443345A
CN110443345A CN201910699882.8A CN201910699882A CN110443345A CN 110443345 A CN110443345 A CN 110443345A CN 201910699882 A CN201910699882 A CN 201910699882A CN 110443345 A CN110443345 A CN 110443345A
Authority
CN
China
Prior art keywords
nano material
polyoxometallate
dimension nano
semiconductor low
molecule
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201910699882.8A
Other languages
Chinese (zh)
Other versions
CN110443345B (en
Inventor
周文利
吴硕
陈昌盛
朱宇
程润虹
王耘波
高俊雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huazhong University of Science and Technology
Original Assignee
Huazhong University of Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huazhong University of Science and Technology filed Critical Huazhong University of Science and Technology
Priority to CN201910699882.8A priority Critical patent/CN110443345B/en
Publication of CN110443345A publication Critical patent/CN110443345A/en
Application granted granted Critical
Publication of CN110443345B publication Critical patent/CN110443345B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/002—Biomolecular computers, i.e. using biomolecules, proteins, cells
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biomedical Technology (AREA)
  • General Physics & Mathematics (AREA)
  • Software Systems (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Artificial Intelligence (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Data Mining & Analysis (AREA)
  • Mathematical Physics (AREA)
  • Computational Linguistics (AREA)
  • Evolutionary Computation (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Chemistry (AREA)
  • Neurology (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)

Abstract

The invention belongs to field of artificial intelligence, are related to a kind of a kind of novel ternary molecule neural network providing the method for behavior using oxidation/reduction Molecular Adsorption regulation polyoxometallate-semiconductor low-dimension nano material neural network electric pulse and obtaining based on the regulation method.By regulation oxidation/reduction molecule in the absorption of the polyoxometallate-semiconductor low-dimension nano material composite structure surface, change the electric charge transfer between polyoxometallate and semiconductor low-dimension nano material, to change polyoxometallate-semiconductor low-dimension nano material composite construction conductance, and then change the charge barrier between polyoxometallate-semiconductor low-dimension nano material composite construction unit and corresponding charge transmission mechanism, behavior is provided to regulate and control polyoxometallate-semiconductor low-dimension nano material neural network electric pulse, thus the uncontrollable technical problem of electric pulse behavior in the molecule neural network that the prior art proposes is solved.

Description

A method of regulation nano molecular neural network electric pulse provides behavior
Technical field
The invention belongs to field of artificial intelligence, are related to a kind of regulation nano molecular neural network electric pulse granting behavior Method.Regulate and control polyoxometallate-semiconductor low-dimensional nanometer using oxidation/reduction Molecular Adsorption more particularly, to a kind of The method of material neural network electric pulse granting behavior.
Background technique
Semiconductor nanowires, nanobelt and nanotube such as carbon nanotube (CNT), graphene nanobelt, GaAs nano wire etc. Low-dimensional materials are widely studied due to its unique Wuli-Shili-Renli system approach and excellent electric property, currently also by The concern of new type nerve form device research field towards artificial intelligence.
The Hirofumi team of Osaka, Japan university in 2018 is put forward for the first time with phosphomolybdic acid molecule (H3PMo12O40) modification Single-walled carbon nanotube (SCNT) network struction ultra high density nano molecular neural network.It, which is utilized, has polyelectron oxidation-reduction quality Can phosphomolybdic acid molecular modification direct regulation and control CNT electronic structure and electric conductivity, the SCNT in device do not need purely to be half The property led, different from conventional carbon nanotube field-effect pipe, the electrical noise that the SCNT of metallicity is generated can provide nerve abundant Network dynamics environment.This phosphomolybdic acid/CNT molecule, which has the sub- storage capacity of forceful electric power and can discharge electronics along CNT network, to be produced Raw pulse action, the generation image of the electric pulse of their experimental demonstrations as shown in Figure 1, Hirofumi team thus to SCNT molecule Network proposes a kind of automatic cellular automata model of two dimension, has simulated the basic studies function of calculating based on reserve pool.Thus it is Ultra-high capacity neuromorphic hardware system opens the completely new research direction based on CNT.
Phosphomolybdic acid is a kind of polyoxometallate (Polyoxometalates, POMs), is passed through by transition metal ions A kind of multi-metal oxygen cluster compound of oxygen connection and formation, produced by these systems between metal ion by electronics transfer Interaction and their influencing each other with end group ligand, so that them is showed many special physical functions, chemically Matter and bioactivity.As shown in Fig. 2 (a) and Fig. 2 (b), phosphomolybdic acid molecule can at most store or discharge 24 electronics.
But Hirofumi team to the phosphomolybdic acid proposed /CNT molecule neural network pulse generation mechanism not yet from Experiment aspect is disclosed, thus cannot achieve the regulation that its electric pulse behavior such as electric pulse provides amplitude, frequency, probability, Also Top-Down Design can not be carried out to the network.
Summary of the invention
More than polyoxometallate-semiconductor low-dimension nano material neuromorphic device and the network prior art Defect and Improvement requirement, the present invention provides a kind of absorption by oxidation/reduction molecule to this kind of molecule neural network electricity arteries and veins The method that granting behavior is regulated and controled is rushed, using the oxidation/reduction Molecular Adsorption of variety classes and concentration in polyoxometallic acid Salt or semiconductor low-dimension nano material surface lead to the charge inside polyoxometallate and semiconductor low-dimension nano material system Transfer is different, so that the conductance and list of the composite construction unit that more metal hydrochlorides and semiconductor low-dimension nano material are constituted Charge barrier and charge transportation law between member are regulated and controled, so that polyoxometallate-semiconductor low-dimensional nanometer material The electric pulse of material neural network is provided behavior and is regulated and controled, and electric pulse in the molecule neural network that the prior art proposes thus is solved The uncontrollable technical problem of behavior.
To achieve the above object, according to one aspect of the present invention, it provides a kind of more using oxidation/reduction molecular regulation The method that oxometallate-semiconductor low-dimension nano material neural network electric pulse provides behavior, the neural network is based on institute The molecule neural network that polyoxometallate-semiconductor low-dimension nano material composite construction is built is stated, by regulating and controlling oxygen Change/redox molecule changes more metals in the absorption of the polyoxometallate-semiconductor low-dimension nano material composite structure surface Electric charge transfer between oxygen hydrochlorate and semiconductor low-dimension nano material, to change polyoxometallate-semiconductor low-dimensional nanometer The conductance of Material cladding structure, and then change between polyoxometallate-semiconductor low-dimension nano material composite construction unit Charge barrier and corresponding charge transmission mechanism, to regulate and control polyoxometallate-semiconductor low-dimension nano material neural network Electric pulse provide behavior；The oxidation/reduction molecule is can be with the polyoxometallate or semiconductor low-dimensional nanometer material The molecule of electron exchange occurs for material；The semiconductor low-dimension nano material is two wiener of semiconductor monodimension nanometer material or semiconductor Rice material；
When reproducibility Molecular Adsorption is in polyoxometallate-semiconductor low-dimension nano material composite construction cell surface, It is low to reduce semiconductor into polyoxometallate-semiconductor low-dimension nano material composite construction unit for its part electronics transfer Hole concentration in dimension nano material, so that polyoxometallate-semiconductor low-dimension nano material composite construction conductance reduces, Charge barrier between polyoxometallate-semiconductor low-dimension nano material composite construction unit increases, so that described more The electric pulse amplitude and frequency provided in oxometallate-semiconductor low-dimension nano material neural network all reduce.
When oxidisability Molecular Adsorption is in polyoxometallate-semiconductor low-dimension nano material composite construction cell surface, It obtains electronics from polyoxometallate-semiconductor low-dimension nano material composite construction unit, so that it is low to increase semiconductor Hole concentration in dimension nano material, so that polyoxometallate-semiconductor low-dimension nano material composite construction conductance increases, Charge barrier between polyoxometallate-semiconductor low-dimension nano material composite construction unit reduces, so that described more The electric pulse amplitude and frequency provided in oxometallate-semiconductor low-dimension nano material neural network all increase.
Preferably, by the way that the polyoxometallate-semiconductor low-dimension nano material composite construction is immersed in the oxygen In change/redox molecule environment, make the oxidation/reduction Molecular Adsorption described by standing, pressurization, heating or step mode Polyoxometallate or semiconductor low-dimension nano material surface.
Preferably, regulate and control to aoxidize by regulating and controlling the type, concentration or immersion technological parameter of the oxidation/reduction molecule/ Absorption behavior of the redox molecule on the polyoxometallate or semiconductor low-dimension nano material surface.
Preferably, the polyoxometallate-semiconductor low-dimension nano material composite construction is placed in closed container, is taken out After taking vacuum, nitrogen or inert gas are passed through to normal pressure, then be passed through the oxidation/reduction molecule of required type and concentration, made Charge barrier and charge transmission mechanism between its conductance for being used to the composite construction unit as regulation source, unit.
Preferably, the structure of the molecule neural network includes: substrate, membrane electrode and polyoxometallic acid from bottom to top The semiconductor low-dimension nano material of molecules of salt modification, the semiconductor low-dimension nano material of the polyoxometallate molecular modification are For the polyoxometallate-semiconductor low-dimension nano material composite construction；
The membrane electrode is the laminated film electricity of metal film electrode, Graphene electrodes or graphene and transition metal Pole；The membrane electrode is multiple, composition thin film electrode array；
The semiconductor low-dimension nano material of the polyoxometallate molecular modification is to have adsorbed polyoxometallic acid salinity The semiconductor low-dimension nano material of son, the semiconductor low-dimension nano material of the polyoxometallate molecular modification are erected at described Between membrane electrode.
Other side according to the invention provides a kind of a kind of ternary molecule regulated and controled based on the method Neural network, the ternary molecule neural network are based on the oxidation/reduction molecule, polyoxometallate and semiconductor low-dimensional The ternary molecule neural network that the composite construction of nano material three is built.
Preferably, the structure of the ternary molecule neural network includes: substrate, membrane electrode, multi-metal oxygen from bottom to top The semiconductor low-dimension nano material of hydrochlorate molecular modification and it is adsorbed on the polyoxometallate-semiconductor low-dimension nano material The oxidation/reduction molecule of composite structure surface.
Preferably, the membrane electrode is Graphene electrodes, the semiconductor low-dimensional of the polyoxometallate molecular modification Nano material is connect by Van der Waals force with the Graphene electrodes；Or the membrane electrode is that graphene/transition metal is multiple Close membrane electrode, after the semiconductor low-dimension nano material both ends unwinding of the polyoxometallate molecular modification by covalent bond with Graphene connection in the graphene/transition metal composite film electrode.
Preferably, the preparation of the ternary molecule neural network, includes the following steps:
(1) thin film electrode array of pulse signal acquisition is used in substrate surface preparation；
(2) it by the solution ultrasonic mixing of the solution of semiconductor low-dimension nano material and polyoxometallate, is prepared more The semiconductor low-dimension nano material mixed solution of oxometallate molecular modification；
(3) dielectrophoresis technology is used, the semiconductor low-dimension nano material of polyoxometallate molecular modification is mixed molten Drop enters between membrane electrode, is passed through alternating voltage, so that polyoxometallate-semiconductor low-dimension nano material composite construction It is assembled between membrane electrode；Then by organic solvent drop in the electrodes between remove remaining polyoxometallic acid salting liquid, obtain Built by the polyoxometallate-semiconductor low-dimension nano material composite construction as basic unit constitute there is topology knot Structure or the binary molecule neural network connected at random, the organic solvent are preferably acetone soln；
(4) by the polyoxometallate in the binary molecule neural network-semiconductor low-dimension nano material composite construction It is immersed in the oxidation/reduction molecule environment, so that the oxidation/reduction Molecular Adsorption is in the polyoxometallate-half Conductor low-dimension nano material composite structure surface obtains the ternary molecule neural network.
Preferably, the preparation of the ternary molecule neural network, includes the following steps:
(1) thin film electrode array of pulse signal acquisition is used in substrate surface preparation；
(2) by semiconductor low-dimension nano material solution and polyoxometallic acid salting liquid ultrasonic mixing, polyoxometallic acid is prepared The semiconductor low-dimension nano material mixed solution of molecules of salt modification；
(3) to step (2) obtain polyoxometallate molecular modification semiconductor low-dimension nano material mixed solution into The filtering of row film, it is more by being covered on one side in obtained filtration membrane containing semiconductor low-dimension nano material/polyoxometallate On electrod-array, filtration membrane is dissolved with Organic chemical solvents and is removed, is obtained by the polyoxometallate-semiconductor low-dimensional Nano material composite construction builds the binary molecule nerve net for having topological structure or connect at random of composition as basic unit Network；
(4) by the polyoxometallate in the binary molecule neural network-semiconductor low-dimension nano material composite construction It is immersed in the oxidation/reduction molecule environment, so that the oxidation/reduction Molecular Adsorption is in the polyoxometallate-half Conductor low-dimension nano material composite structure surface obtains the ternary molecule neural network.
Preferably, the preparation of the ternary molecule neural network, includes the following steps:
(1) thin film electrode array of pulse signal acquisition is used in substrate surface preparation；
(2) dielectrophoresis technology is used, it, then will be mostly golden by the assembly of semiconductor low-dimension nano material between membrane electrode Belong to oxygen acid salt solution drop between the membrane electrode, stands 1-2 hours；
(3) organic solvent drop is removed between the membrane electrode remaining polyoxometallic acid salting liquid, obtained by institute State polyoxometallate-semiconductor low-dimension nano material composite construction as basic unit build composition have topological structure or The binary molecule neural network connected at random；
(4) by the polyoxometallate in the binary molecule neural network-semiconductor low-dimension nano material composite construction It is immersed in the oxidation/reduction molecule environment, so that the oxidation/reduction Molecular Adsorption is multiple in the polyoxometallate- Structure semiconductor low-dimension nano material surface is closed, the ternary molecule neural network is obtained.
Preferably, the polyoxometallate is phosphomolybdic acid molecule or phosphotungstic acid molecule, the semiconductor low-dimensional nanometer material Material is semiconductor monodimension nanometer material or semiconductor two-dimension nano materials.
Preferably, the semiconductor low-dimension nano material includes that semiconductor nanowires, semiconductor nano-strip or semiconductor are received Mitron.
Preferably, the oxidation/reduction molecule is redox gas molecule, redox liquid molecule or redox Molecular solids.
Preferably, the redox gas molecule is ammonia, nitrogen dioxide, sulfur dioxide, in ethyl alcohol and hydrone It is one or more.
Preferably, redox liquid molecule is toluene or hydrogen peroxide.
In general, the present invention is directed to and is formed by two kinds of Material claddings of polyoxometallate and semiconductor low-dimension nano material Molecule neural network, referred to as existing binary molecule neural network in the present invention, proposition inhales oxidation/reduction small molecule It is attached on polyoxometallate and semiconductor low-dimension nano material, passes through regulation semiconductor nanowires/band/pipe and polyoxometallic acid The conductance and unit of electric charge transfer, semiconductor nanowires/band/pipe between salt and polyoxometallate composite construction unit it Between charge barrier and corresponding charge transmission mechanism so that constructed by semiconductor nanowires/band/pipe and polyoxometallate Electric pulse granting characteristic is adjustable in molecular network, it is also possible to using the otherness between different small molecules, to this kind of molecular network Electric pulse in network is provided mechanism and is disclosed.Through the invention it is contemplated above technical scheme is compared with the prior art, energy Enough obtain it is following the utility model has the advantages that
(1) it is received the present invention provides a kind of using oxidation/reduction Molecular Adsorption regulation polyoxometallate-semiconductor low-dimensional The method that rice material neural network electric pulse provides behavior, by regulation oxidation/reduction molecule in polyoxometallate-semiconductor The absorption of low-dimension nano material composite structure surface changes the charge between polyoxometallate and semiconductor low-dimension nano material Transfer, to change polyoxometallate-semiconductor low-dimension nano material composite construction conductance, and then changes multi-metal oxygen Charge barrier and corresponding charge transmission mechanism between hydrochlorate-semiconductor low-dimension nano material composite construction unit, and then adjust It controls polyoxometallate-semiconductor low-dimension nano material neural network electric pulse and provides behavior.
(2) a kind of neural network electric pulse provided by the invention provides the regulation method of behavior, for based on semiconductor nano Line/band/pipe-polyoxometallate building network provides a kind of feasible electric pulse regulation method, so that its network application Study mechanism when artificial intelligence application is controlled with parameter, at the same this method has that exploitativeness is strong, controllability it is high with And the feature that experiment is simple, the more metal acid-salt-semiconductor nanos of oxidation/reduction molecular regulation are utilized the present invention also provides a kind of The process implementation method of line/band/pipe composite network structure electric pulse granting characteristic.
(3) present invention demonstrates gas molecule to single-root carbon nano-tube/polyoxometallate by first-principles calculations Electric charge transfer regulation, using this electric charge transfer regulatory mechanism, by using the network simulation result based on cellular automata Part of test results with carbon nanotube/polyoxometallate molecular network conductance changes after gas molecule absorption, demonstrates The feasibility of this regulation Method And Principle and realization, while it is reasonably expanded, so that this regulation method can be adapted for Other semiconductor low-dimension nano materials.The present invention is received using oxidation/reduction molecular Control polyoxometallate-semiconductor low-dimensional Electric charge transfer and transmission mechanism in rice Material cladding network structure make single metal hydrochlorate-semiconductor low-dimension nano material multiple The charge propagation threshold closed between structural unit can be adjusted, thus to regulate and control with arteries and veins electric in the molecule neural network constructed by this The granting frequency of the granting characteristic electric pulse of punching, amplitude etc., it is hereby achieved that required specific electric pulse behavior is more Oxometallate-semiconductor low-dimension nano material composite network.
It (4), should the present invention also provides a kind of novel ternary molecule neural network obtained based on above-mentioned regulation method Ternary molecule neural network is based on the oxidation/reduction molecule, polyoxometallate and semiconductor low-dimension nano material three The ternary molecule neural network that the composite construction of person is built, relative to traditional low based on polyoxometallate and semiconductor The binary molecule neural network that two kinds of Material cladding structures of dimension nano material are constituted as basic core cell increases multiple at this The oxidation/reduction molecule of body structure surface absorption is closed, so that the novel ternary molecule neural network controllability is stronger, such as Its electric pulse behavior controllability is remarkably reinforced and has designability.
Detailed description of the invention
Fig. 1 is the electricity at the random network electrode both ends that polyoxometallate of the present invention and composite structure of carbon nano tube are built Flow pulse amplitude and time graph.
Fig. 2 is phosphomolybdic acid schematic arrangement in the present invention, and (a) is [PMo12O40]3-Molecular model.(b) it is [PMo12O40]27-Molecular model.
Fig. 3 is polyoxometallate-composite structure of carbon nano tube (a) and to have adsorbed variety classes oxygen thereon in the present invention Model schematic (b, c, d, e, f) after change/reduction small molecule.
Fig. 4 is polyoxometallate of the present invention and composite structure of carbon nano tube unit and two end electrodes structural schematic diagram.
Fig. 5 is the thin film electrode array signal that polyoxometallate and composite structure of carbon nano tube are assembled in the present invention Figure, (a) is array electrode schematic three dimensional views, (b) the details enlarged drawing that institute's frame selects in figure a.
Fig. 6 is the schematic diagram of the present invention multiple polyoxometallic acid molecules of salt and composite structure of carbon nano tube three-dimensional.
Fig. 7 is the schematic diagram of polyoxometallate of the present invention Yu graphene nanobelt composite construction three-dimensional, and (a) is three-dimensional knot The main view of structure is (b) top view of three-dimensional structure.
Fig. 8 is the electronic state transition function curve in the present invention in automatic Cellular Automata model.
Fig. 9 is Cellular Automata flow chart in the present invention.
Figure 10 is Cellular Automata random network structural schematic diagram of the present invention.
Figure 11 is the electrode both ends electric pulse that the present invention utilizes Cellular Automata Fig. 3 random network.
Figure 12 is the present invention using after the small numerator modified phosphomolybdic acid of first-principles calculations difference redox, phosphomolybdic acid with Electric charge transfer number between carbon nanotube.
Figure 13 is that the present invention is multiple using polyoxometallate-carbon nanotube of various concentration oxidation/reduction small molecule regulation Close structural resistance value change rate.
Figure 14 is polyoxometallate of the present invention-phosphomolybdic acid composite construction atomic force microscope schematic diagram.
Figure 15 is single-root carbon nano-tube of the present invention/phosphomolybdic acid composite construction SEM figure.
Figure 16 is the two end electrodes Stochastic Networks that carbon nanotube of the present invention/phosphomolybdic acid molecule neural network composite construction is built Network SEM image.
Figure 17 is the electric pulse emulation schematic diagram after ammonia regulation of the invention.
Figure 18 is the electric pulse emulating image that the present invention is not regulated and controled.
Figure 19 is the present invention using the electric pulse emulation schematic diagram after nitrogen dioxide regulation.
In all the appended drawings, identical appended drawing reference is used to denote the same element or structure, in which:
1- carbon nanotube；2- polyoxometallate；3- graphene nanobelt；4- membrane electrode；5- gate dielectric layer；6- lining Bottom.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below Not constituting a conflict with each other can be combined with each other.
A kind of utilization oxidation/reduction molecular regulation polyoxometallate-semiconductor low-dimension nano material provided by the invention The method that neural network electric pulse provides behavior is low in the polyoxometallate-semiconductor by regulation oxidation/reduction molecule The absorption of dimension nano material composite structure surface, the charge changed between polyoxometallate and semiconductor low-dimension nano material turn It moves, to change polyoxometallate-semiconductor low-dimension nano material composite construction conductance, and then changes polyoxometallic acid Charge barrier and corresponding charge transmission mechanism between salt-semiconductor low-dimension nano material composite construction unit, to regulate and control Polyoxometallate-semiconductor low-dimension nano material neural network electric pulse provides behavior；The oxidation/reduction molecule is energy Enough molecules that electron exchange occurs with the polyoxometallate or semiconductor low-dimension nano material；The semiconductor low-dimensional nanometer Material is semiconductor monodimension nanometer material or semiconductor two-dimension nano materials；
When reproducibility Molecular Adsorption is on polyoxometallate-semiconductor low-dimension nano material composite construction unit, Part electronics transfer reduces semiconductor low-dimensional into polyoxometallate-semiconductor low-dimension nano material composite construction unit Hole concentration in nano material, so that polyoxometallate-semiconductor low-dimension nano material composite construction conductance reduces, it is more Charge barrier between oxometallate-semiconductor low-dimension nano material composite construction unit increases, so that described mostly golden Belong to the electric pulse amplitude provided in oxygen hydrochlorate-semiconductor low-dimension nano material neural network and frequency all reduces.
When oxidisability Molecular Adsorption is on polyoxometallate-semiconductor low-dimension nano material composite construction unit, Electronics is obtained from polyoxometallate-semiconductor low-dimension nano material composite construction unit, to increase semiconductor low-dimensional Hole concentration in nano material, so that polyoxometallate-semiconductor low-dimension nano material composite construction conductance increases, it is more Charge barrier between oxometallate-semiconductor low-dimension nano material composite construction unit reduces, so that described mostly golden Belong to the electric pulse amplitude provided in oxygen hydrochlorate-semiconductor low-dimension nano material neural network and frequency all increases.
Oxidation/reduction molecular regulation polyoxometallate-semiconductor low-dimension nano material is utilized the present invention provides a kind of The method that neural network electric pulse provides behavior, the polyoxometallate-semiconductor low-dimension nano material composite construction are made It builds to constitute for basic unit and there is certain topological structure or the at random neural network that connects, in the present invention referred to as two First neural network.By regulation oxidation/reduction molecule in the polyoxometallate and semiconductor low-dimension nano material surface Absorption behavior, to provide behavior to regulate and control the electric pulse of the neural network.Oxidation/reduction molecule of the present invention can be inhaled It is attached on polyoxometallate, also can be adsorbed on semiconductor low-dimension nano material surface, or be adsorbed on polyoxometallate simultaneously With semiconductor low-dimension nano material surface, the above absorption situation Unify legislation is to be adsorbed on polyoxometallate-half by the present invention The composite construction cell surface of conductor low-dimension nano material；Since the absorption of wherein oxidation/reduction molecule changes base unit In charge distribution state, the Regulation Mechanism for providing behavior to the electric pulse of neural network is identical, is all by changing more metals Electric charge transfer between oxygen hydrochlorate and semiconductor low-dimension nano material, to change polyoxometallate-semiconductor low-dimensional nanometer material Expect the conductance of composite construction, and then changes between polyoxometallate-semiconductor low-dimension nano material composite construction unit Charge barrier and corresponding charge transmission mechanism, so that the electric pulse for influencing molecule neural network provides behavior；So by with Prosecutor method is raised, the electric pulse in controllable polyoxometallate-semiconductor low-dimension nano material neural network provides behavior.
"/" in oxidation/reduction molecule of the present invention is the meaning of "or", is expressed as oxidisability molecule or reproducibility Molecule.
When reproducibility Molecular Adsorption is mostly golden in polyoxometallate-semiconductor low-dimension nano material composite construction unit When belonging to oxygen hydrochlorate surface, reproducibility mid-molecule divides electronics transfer into polyoxometallate, makes semiconductor low-dimension nano material In be transferred to polyoxometallate molecule electron amount reduce, reduce the hole concentration in semiconductor low-dimension nano material, So that polyoxometallate-semiconductor low-dimension nano material composite construction conductance reduces, polyoxometallate-semiconductor low-dimensional Charge barrier between nano material composite construction unit increases, so that the polyoxometallate-semiconductor low-dimensional is received The electric pulse amplitude and frequency provided in rice material neural network all reduce.
When reproducibility Molecular Adsorption in polyoxometallate-semiconductor low-dimension nano material composite construction unit semiconductor When low-dimensional materials surface, reproducibility mid-molecule divides electronics transfer into low-dimension nano material, reduces semiconductor low-dimensional nanometer Hole concentration in material, so that polyoxometallate-semiconductor low-dimension nano material composite construction conductance reduces, more metals Charge barrier between oxygen hydrochlorate-semiconductor low-dimension nano material composite construction unit increases, so that the multi-metal oxygen The electric pulse amplitude and frequency provided in hydrochlorate-semiconductor low-dimension nano material neural network all reduce.
When reproducibility molecule is adsorbed on polyoxometallate and semiconductor low-dimension nano material surface simultaneously, reproducibility point Part electronics transfer in son makes semiconductor low-dimensional nanometer material into polyoxometallic acid molecules of salt and semiconductor low-dimension nano material The electron amount that polyoxometallate molecule is transferred in material is reduced, and at the same time, is adsorbed on semiconductor low-dimension nano material table Electronics in the redox molecule in face is also transferred in semiconductor low-dimension nano material, and the two mechanism of action is all reduction of semiconductor Hole concentration in low-dimension nano material, so that corresponding polyoxometallate-semiconductor low-dimension nano material composite construction Conductance reduces, and the charge barrier between polyoxometallate-semiconductor low-dimension nano material composite construction unit is increased, So that the electric pulse amplitude and frequency provided in the polyoxometallate-semiconductor low-dimension nano material neural network are all Reduce.
When oxidisability Molecular Adsorption is mostly golden in polyoxometallate-semiconductor low-dimension nano material composite construction unit When belonging to oxygen hydrochlorate surface, the part electronics transfer in polyoxometallic acid molecules of salt makes semiconductor low-dimensional receive into oxidisability molecule The electron amount that polyoxometallate molecule is transferred in rice material increases, to increase in semiconductor low-dimension nano material Hole concentration makes so that the charge barrier between polyoxometallate-semiconductor low-dimension nano material composite construction unit reduces It obtains polyoxometallate-semiconductor low-dimension nano material composite construction conductance to increase, so that the polyoxometallate-is partly led The electric pulse amplitude and frequency provided in body low-dimension nano material neural network all increase.
When oxidisability reproducibility Molecular Adsorption is in polyoxometallate-semiconductor low-dimension nano material composite construction unit When the surface of semiconductor low-dimensional materials, the part electronics transfer in semiconductor low-dimension nano material into oxidisability molecule, thus The hole concentration in semiconductor low-dimension nano material is increased, so that polyoxometallate-semiconductor low-dimension nano material is compound Charge barrier between structural unit reduces, so that polyoxometallate-semiconductor low-dimension nano material composite construction conductance Increase, so that the electric pulse amplitude and frequency provided in the polyoxometallate-semiconductor low-dimension nano material neural network All increase.
When oxidisability molecule is adsorbed on polyoxometallate and semiconductor low-dimension nano material surface simultaneously, multi-metal oxygen For part electronics transfer in hydrochlorate molecule and semiconductor low-dimension nano material into oxidisability molecule, the two mechanism of action is all to increase The hole concentration in semiconductor low-dimension nano material is added, so that polyoxometallate-semiconductor low-dimension nano material composite junction Charge barrier between structure unit reduces, so that polyoxometallate-semiconductor low-dimension nano material composite construction conductance increases Add, so that the electric pulse amplitude and frequency provided in the polyoxometallate-semiconductor low-dimension nano material neural network are all Increase.
In some embodiments of the invention, the polyoxometallate be phosphomolybdic acid molecule or phosphotungstic acid molecule, it is described partly to lead Body nano material is low dimension semiconductor nano material, low dimension semiconductor nano material of the present invention, is referred to one-dimensional or two-dimentional half Conductor nano material.The present invention is preferably semiconductor nanowires/band/pipe, and semiconductor nanowires/band/pipe refers under nanoscale Linear, band-like or tubulose material, such as carbon nanotube, graphene nanobelt, GaAs nano wire；It for example can be partly to lead Body carbon nanocoils, semiconductive graphene ribbon, semiconductive carbon nano tube or metallic carbon nanotubes；Preferably single wall is partly led Body carbon nanotube.
Oxidation/reduction molecule of the present invention can be redox gas molecule, or redox solid Or fluid molecule.In some embodiments, the oxidation/reduction molecule is redox gas molecules, including but not limited to ammonia One of gas, nitrogen dioxide, sulfur dioxide, hydrogen sulfide, ethyl alcohol and hydrone are a variety of, and Fig. 3 is adsorbed on more for gas with various The structural schematic diagram that oxometallate indicates, wherein polyoxometallate is adsorbed on carbon nano tube surface.Wherein Fig. 3 (a) is corresponding For adsorption and oxidation/redox molecule comparative diagram, Fig. 3 (b), Fig. 3 (c), Fig. 3 (d), Fig. 3 (e) and Fig. 3 (f) respectively correspond more metals Oxygen hydrochlorate molecular surface has adsorbed ammonia, sulfur dioxide, carbon monoxide, hydrogen and sulfur dioxide molecule.
In some examples, the oxidation/reduction molecule is redox liquid molecule, including but not limited to toluene and peroxide Change hydrogen molecule.
In some embodiments, by the way that the polyoxometallate-semiconductor low-dimension nano material composite construction is immersed in In environment containing the oxidation/reduction molecule, the oxidation/reduction point is made by standing, pressurization, heating or step mode Son is adsorbed on the polyoxometallate or semiconductor low-dimension nano material surface.Directly standing a few hours may be implemented to adsorb, Or promote the oxidation/reduction molecule in the polyoxometallate-semiconductor by using pressurization, heating or step mode The absorption of low-dimension nano material composite structure surface.
Oxidation/reduction molecule of the present invention is in the polyoxometallate-semiconductor low-dimension nano material composite junction The absorption on structure surface, absorption refer to that oxidation/reduction molecule is received with polyoxometallic acid molecules of salt or semiconductor low-dimensional in the present invention Rice material directly contacts.It specifically can be by regulating and controlling to be adsorbed on the oxygen of polyoxometallate or semiconductor low-dimension nano material surface Change/redox molecule type, concentration, or by adjusting the polyoxometallate-semiconductor low-dimension nano material composite junction Structure, which is immersed in containing the technological parameter in the oxidation/reduction molecule environment, changes oxidation/reduction molecule in polyoxometallic acid Salt-semiconductor low-dimension nano material composite structure surface equilibrium adsorption capacity.
It is low in polyoxometallate or semiconductor that oxidation/reduction molecule of the present invention can not be also obtained in experiment at present The accurate adsorbance on dimension nano material surface, but regulation method according to the present invention, can be by changing experiment condition, such as oxygen Change/redox molecule type or concentration control the technological parameter of oxidation/reduction Molecular Adsorption amount, of the present invention to realize Electric pulse amplitude, the frequency of molecule neural network increase or reduce.In some embodiments, when oxidation/reduction molecule is gas When molecule, volume fraction of the oxidation/reduction molecule in the system is not more than 10%.It may include protection gas, protection in the system Gas can be nitrogen or inert gas.By adjusting the concentration of redox gas molecule in the system, or by regulating and controlling this hair Bright polyoxometallate-semiconductor low-dimension nano material composite construction neural network immerses technique to adjust oxidation/reduction molecule In polyoxometallate-semiconductor low-dimension nano material composite structure surface adsorbance, such as can be by adjusting the composite junction The parameters such as immersion time, heating temperature, power-on voltage, moulding pressure of the structure in oxidation/reduction molecule environment come adjust oxidation/ Redox molecule is in polyoxometallate-semiconductor low-dimension nano material composite structure surface equilibrium adsorption capacity.Specifically, some In embodiment, when the composite construction being immersed in oxidation/reduction molecule environment so that oxidation/reduction Molecular Adsorption is in more metals The time is immersed not shorter than 1 hour in oxygen hydrochlorate-semiconductor low-dimension nano material composite construction surface.
In some embodiments, oxidation/reduction molecule is gas molecule, and the polyoxometallate-semiconductor low-dimensional is received Rice Material cladding structure, or by the polyoxometallate-semiconductor low-dimension nano material composite construction as basic unit Being placed in closed container with topological structure or the binary molecule neural network connected at random for composition is built, vacuum is extracted Afterwards, nitrogen or inert gas are passed through to normal pressure, then is passed through the oxidation/reduction molecule of required type and concentration, makes its conduct Regulation source in the present invention.
In some embodiments, when oxidation/reduction molecule is fluid molecule, by the polyoxometallate-semiconductor low-dimensional Nano material composite construction, or by single based on the polyoxometallate-semiconductor low-dimension nano material composite construction Member builds immersing in redox liquid molecular system with topological structure or the neural network connected at random for composition, leads to Standing a few hours are spent, or promote the oxidation/reduction molecule in more metals by using pressurization, heating or step mode The absorption of oxygen hydrochlorate-semiconductor low-dimension nano material composite structure surface.
In some embodiments, the polyoxometallate-semiconductor low-dimension nano material composite construction is as basic unit The structure for building the binary molecule neural network of composition includes: that substrate, membrane electrode, polyoxometallic acid molecules of salt are repaired from bottom to top The semiconductor low-dimension nano material of decorations and it is adsorbed on the oxidation on polyoxometallate or semiconductor low-dimension nano material surface/also Original molecule, the composite construction schematic diagram in some examples as shown in figure 4, be respectively 6- substrate, 5- gate dielectric layer, 4- from bottom to top Membrane electrode, 1- carbon nanotube, 2- polyoxometallate.The membrane electrode is metal film electrode, Graphene electrodes or stone The composite film electrode of black alkene and transition metal；The membrane electrode is multiple, composition thin film electrode array, as shown in figure 5, more Oxometallate and composite structure of carbon nano tube unit are built at electrode both ends, and electrode is used to acquire and export electric signal, under Fig. 5 Figure is the partial enlarged view of upper figure.The semiconductor low-dimension nano material of the polyoxometallate molecular modification has as adsorbed more The semiconductor low-dimension nano material of oxometallic acid molecules of salt, the semiconductor low-dimensional nanometer material of the polyoxometallate molecular modification Material is erected between the membrane electrode.
The composite construction of polyoxometallate of the present invention and semiconductor low-dimension nano material, refers to polyoxometallate Molecular Adsorption on semiconductor low-dimension nano material surface, both materials by such as ultrasonic mixing, heat physical means and It is received by polyoxometallic acid molecules of salt produced by the chemical means such as modified metal hydrochlorate and nano-material surface with semiconductor low-dimensional The configuration state that rice material surface is in contact.The present invention is basic building unit topological structure network with the composite construction, is also wrapped Containing the composite network structure built or built by certain topological structure at random.
In some embodiments, the topological structure network be random network, full Connection Neural Network, Recognition with Recurrent Neural Network, Echo neural network, liquid condition machine, back-propagation network, Self-organizing Maps, Hopfield network, Boltzmann machine etc..
In some embodiments, the membrane electrode is Graphene electrodes, and the polyoxometallate molecular modification is partly led Body low-dimension nano material is connect by Van der Waals force with the Graphene electrodes；Or the membrane electrode is graphene/transition Metal composite thin film electrode, by altogether after the semiconductor low-dimension nano material both ends unwinding of the polyoxometallate molecular modification Valence link is connect with the graphene in the graphene/transition metal composite film electrode.
In some embodiments, the substrate material is Si, SiO2、SiO2/ Si, GaAs, GaN, SiC, BN, ceramics or blue precious Stone etc..
In some embodiments, the thin film electrode array is with a thickness of 50nm~1 μm；Membrane electrode spacing is 0.1~500 μ M, membrane electrode width are 1~1000nm.
In some embodiments, by the way that the solution ultrasound of the solution of semiconductor low-dimension nano material and polyoxometallate is mixed It closes, obtains the semiconductor low-dimension nano material of polyoxometallate molecular modification, i.e., described polyoxometallate-semiconductor low-dimensional Nano material composite construction.
In some embodiments, it is low that polyoxometallic acid salting liquid is added dropwise to the semiconductor being erected between the membrane electrode On dimension nano material, the semiconductor low-dimension nano material of polyoxometallate molecular modification is obtained after standing.
In some embodiments, the solution concentration of semiconductor low-dimension nano material is 0.001 μ of μ g/ml~1000 g/ml；It is mostly golden The solution concentration for belonging to oxygen hydrochlorate is 1 μ of μ g/ml~5000 g/ml；Time of repose is 2~30min.
In some embodiments, the solvent of the solution of the solution or polyoxometallate of semiconductor low-dimension nano material is to include The organic solvent of semiconductor low-dimension nano material easy to dissolve, polyoxometallate including dimethylformamide (DMF).
The present invention also provides a kind of ternary molecule neural network obtained based on above-mentioned regulation method, the ternary molecule minds It is the composite junction based on the oxidation/reduction molecule, polyoxometallate and semiconductor low-dimension nano material three through network The ternary molecule neural network that structure is built.
In some embodiments, the structure of the ternary molecule neural network includes: substrate from bottom to top, membrane electrode, more It the semiconductor low-dimension nano material of oxometallate molecular modification and is adsorbed on the polyoxometallate-semiconductor low-dimensional and receives The oxidation/reduction molecule of rice Material cladding body structure surface.
In some embodiments, the preparation of ternary molecule neural network of the present invention includes the following steps:
(1) thin film electrode array of pulse signal acquisition is used in substrate surface preparation；
(2) solution of semiconductor low-dimension nano material is mixed into ultrasound with the solution of polyoxometallate, be prepared more The semiconductor low-dimension nano material mixed solution of oxometallate molecular modification；
(3) dielectrophoresis technology is used, the semiconductor low-dimension nano material of polyoxometallate molecular modification is mixed molten Drop enters between membrane electrode, is passed through alternating voltage, so that polyoxometallate-semiconductor low-dimension nano material composite construction It is assembled between membrane electrode；Then by organic solvent drop in the electrodes between remove remaining polyoxometallic acid salting liquid, obtain Built by the polyoxometallate-semiconductor low-dimension nano material composite construction as basic unit constitute there is topology knot Structure or the binary molecule neural network connected at random, the organic solvent are preferably acetone soln；
(4) polyoxometallate in the binary molecule neural network structure-semiconductor low-dimension nano material is compound Structure is immersed in the oxidation/reduction molecule environment, so that the oxidation/reduction Molecular Adsorption is in the polyoxometallic acid Salt-semiconductor low-dimension nano material composite structure surface, obtains the ternary molecule neural network.
In some embodiments, the membrane electrode is metal film electrode, and above-mentioned steps (1) include following sub-step:
(1.1) photoetching process is used, prepares the overturning figure of electrode in substrate surface；Substrate material is Si, SiO2、SiO2/ Any one in Si, GaN, GaAs, ceramics or sapphire.
(1.2) physical gas-phase deposition is used, in substrate surface deposited metal film；Thickness of metal film be 20nm~ 1.64μm；
(1.3) stripping technology is used, prepares metal film electrode in substrate surface；Electrode spacing is 0.1~500 μm, electricity Pole width is 1~1000nm.
In some embodiments, the solution concentration of semiconductor low-dimension nano material is 0.001 μ of μ g/ml~1000 g/ml；It is mostly golden The solution concentration for belonging to oxygen hydrochlorate is 1 μ of μ g/ml~5000 g/ml；The solution and polyoxometallate of semiconductor low-dimension nano material Solution mixing ultrasonic power be 5W~300W, ultrasonic time be 5~30h.
In some embodiments, AC signal voltage used in dielectrophoresis is 10~18Vpp, frequency is 1~10MHz；Dielectric electricity Swimsuit is 1~15 μ l with semiconductor low-dimension nano material liquor capacity.
In some embodiments, it is multiple that above-mentioned steps (3) can first prepare polyoxometallate-semiconductor low-dimension nano material Artificial neural is closed, is transferred on thin film electrode array by way of transfer.Correspondingly, ternary molecule nerve net of the present invention The preparation of network, includes the following steps:
(1) thin film electrode array of pulse signal acquisition is used in substrate surface preparation；
(2) by semiconductor low-dimension nano material solution and polyoxometallic acid salting liquid ultrasonic mixing, polyoxometallic acid is prepared The semiconductor low-dimension nano material mixed solution of molecules of salt modification；
(3) to step (2) obtain polyoxometallate molecular modification semiconductor low-dimension nano material mixed solution into The filtering of row film will have semiconductor low-dimension nano material/polyoxometallate to be covered on one side mostly electric in obtained filtration membrane On the array of pole, filtration membrane is dissolved with Organic chemical solvents such as acetone and is removed；It obtains by the polyoxometallate-semiconductor Low-dimension nano material composite construction builds the binary molecule mind for having topological structure or connecting at random of composition as basic unit Through network；
(4) by the polyoxometallate in the binary molecule neural network-semiconductor low-dimension nano material composite construction It is immersed in the oxidation/reduction molecule environment, so that the oxidation/reduction Molecular Adsorption is in the polyoxometallate-half Conductor low-dimension nano material composite structure surface obtains the ternary molecule neural network.
In other embodiments, the preparation of ternary molecule neural network of the present invention includes the following steps:
(1) thin film electrode array of pulse signal acquisition is used in substrate surface preparation；
(2) dielectrophoresis technology is used, it, then will be mostly golden by the assembly of semiconductor low-dimension nano material between membrane electrode Belong to oxygen acid salt solution drop between the membrane electrode, wherein polyoxometallate is dissolved in DMF solution；Stand 1-2 hours；
(3) organic solvent drop is then removed between the membrane electrode remaining polyoxometallic acid salting liquid, obtained Built by the polyoxometallate-semiconductor low-dimension nano material composite construction as basic unit constitute there is topology knot Structure or the binary molecule neural network connected at random, the organic solvent are preferably acetone soln；
(4) polyoxometallate in the binary molecule neural network structure-semiconductor low-dimension nano material is compound Structure is immersed in the oxidation/reduction molecule environment, so that the oxidation/reduction Molecular Adsorption is in the polyoxometallic acid Salt-semiconductor low-dimension nano material composite structure surface, obtains the ternary molecule neural network.
In above-mentioned three kinds of methods, for step (4):
It is when oxidation/reduction molecule is gas molecule, the polyoxometallate-semiconductor low-dimension nano material is compound Structure or the binary molecule neural network are integrally placed in closed container, are extracted vacuum, are passed through nitrogen or inert gas To normal pressure, to eliminate the influence of water vapour in environment, then it is passed through the oxidation-reduction quality molecule of predetermined type and concentration, system Be oxidized after stabilization/redox molecule modification regulation after ternary molecular network.
It is when oxidation/reduction molecule is fluid molecule, the polyoxometallate-semiconductor low-dimension nano material is compound Structure or the binary molecule neural network are integrally immersed in the redox liquid molecular system, by standing, are added The modes such as pressure, heating or energization make the oxidation/reduction Molecular Adsorption in the polyoxometallate-semiconductor low-dimensional nanometer Material cladding body structure surface, system stablize after be oxidized/redox molecule modification regulation after ternary molecular network.
In some embodiments, by be oxidized/redox molecule modification regulation after molecular network be packaged, and be in low temperature State is saved and is used, and prevents molecule De contamination.
In some embodiments, oxidation/reduction molecule is gas molecule, is carried out using AES-4TH intelligent gas analysis system Operation, above-mentioned steps (4) include following sub-step:
(4.1) vacuum is extracted, pressure in container is extracted to 100Pa or less；
(4.2) it is passed through protective gas, that is, is passed through N2The inert gases such as gas or argon gas are to normal pressure；
(4.3) preset type and concentration oxidation-reduction quality molecule are passed through.
(4.4) resistance variations are between measuring electrode to judge that system is stablized, and system is oxidized after stablizing/redox molecule repairs Ternary molecule neural network after decorations regulation, the state being adjusted is judged according to resistance change rate.
The present invention changes by the relative density of control polyoxometallate and oxidation/reduction molecule and is adsorbed on mostly gold Belong to oxygen hydrochlorate-semiconductor nanowires/band/pipe composite structure surface oxidation/reduction molecule type and density to improve it Electronics transfer and transmission mechanism in composite construction, so that polyoxometallate-semiconductor nanowires/band/pipe composite construction institute The electric pulse behavior of generation and the available certain regulation of charge transmission mechanism.Control measures include using above-mentioned oxidation/ Redox molecule handles its polyoxometallate and semiconductor nanowires/band/pipe composite construction, such as by by composite construction Included in oxidation/reduction molecule environment, make oxidation/reduction Molecular Adsorption in more metals using modes such as pressurization, heating, energizations Oxygen hydrochlorate-semiconductor low-dimension nano material composite structure surface is changed by oxidation/reduction molecular concentration in detection sealing container To control the adsorbance of oxidation/reduction molecule.
Regulation the result is that obtaining polyoxometallate-semiconductor nanowires/band/pipe composite construction electric pulse behavior Control, specifically may include changing polyoxometallate-semiconductor nanowires/band/pipe recombiner unit electron charge transfer function Parameter such as charge threshold, electron-transport quantity etc. the amplitude, frequency, probability of happening of electric pulse are controlled.
Oxidation/reduction molecular regulation polyoxometallate-semiconductor nanowires/band/pipe is utilized the present invention provides a kind of The method that molecular network electric pulse generates, this method using oxidation/reduction Molecular Adsorption in polyoxometallate-by partly being led Body nano wire/band/pipe composite structure surface, polyoxometallate-semiconductor nanowires/band/pipe composite construction such as Fig. 6 and Fig. 7 Shown, so that the conductance between polyoxometallate and semiconductor nanowires/band/pipe is regulated, wherein Fig. 6 is that the present invention is more The schematic diagram of oxometallate and composite structure of carbon nano tube three-dimensional, Fig. 7 (a) and Fig. 7 (b) are respectively polyoxometallate and stone The main view and top view of the schematic diagram of black alkene nanobelt composite construction three-dimensional, 1 is carbon nanotube in Fig. 6；2 be polyoxometallic acid Salt；3 be graphene nanobelt in Fig. 7 (a).
According to document " A molecular neuromorphic network device consisting of Single-walled carbon nanotubes complexed with polyoxometalate, Nature The absorption disclosed in Communications, volume 9, Article number:2693 (2018) " phosphorus on the carbon nanotubes Charge transmits cellular automata simulation model between molybdic acid molecule, this model emulation be phosphomolybdic acid and carbon nanotube is built with Electron-transport and electric pulse behavior in machine network, so the displaying of regulation result of the invention also uses this model.Mould Phosphomolybdic acid molecule is reduced to a simulation unit in type, and the first step calculates cellular center cell using cellular automata and periphery is single Charge difference between member, obtains the adjacent born of the same parents of two maximum electron number differences, and electron number difference is denoted as Δ amax, if center element Electron amount contained by born of the same parents is less than threshold value charge aTH, limited amount charge NmRandom transferring is maximum to adjacent electronics number difference Cell factory on, and random transferring probability function be Pc, function is as follows:
Wherein:Indicate that downward bracket function, ε are carry-over factors, γ is sensitivity constant, and p and q are probability parameter, aI, j It is the quantity of electric charge possessed by (i, j) cellular for coordinate in simulation model.As shown in figure 8, wherein p=1, q=0.95.PcShow thin The capacitive properties of electric charge transfer conductivity and phosphomolybdic acid molecule between born of the same parents' unit.Limited discharge charge Nm(Δamax) it is base In the exponential relationship of Ma Kusi theory.If the electron amount contained by the cellular of center is greater than threshold value charge aTHWhen, contained electronics Number will all be issued to periphery electron number difference maximum and second largest adjacent born of the same parents, and it is 9: 1 that charge, which provides ratio,.Due in network Usually there is excessive charge (to be greater than or equal to a for electric charge transfer, flanking cell unitTH) then in next charge update cycle, Subsequent electric discharge meeting is so that constitute chain reaction (propagation type electric discharge) in network, to can generate electricity in cellular automata system Lotus cascade generates current impulse, charge threshold a at electrode both ends so that the electron number by current electrode sharply increasesTHIt is big It is small to decide the intermolecular different charge transmission mechanism of phosphomolybdic acid, specific Cellular Automata model visible Fig. 9, Tu10Wei The topological structure schematic diagram of random network distribution, Figure 11 are the electric pulse row for emulating both ends random molecular neural network and passing through electrode For vignette is the state of activation of different units in corresponding time network, the brighter electron amount for showing this element and including of unit More, density is higher, and the state of activation for showing network is better.Charge threshold a according to the theoretical explanation of document, in modelTHObject The charge barrier size that reason meaning and phosphomolybdic acid generate on the carbon nanotubes has direct corresponding relationship, can be expressed as phosphorus molybdenum The barrier height that electron tunneling is passed through between acid-composite structure of carbon nano tube unit.The present invention is imitative by first principle simultaneously Very also obtain identical verifying.Theoretical description and first principle based on document emulate and part Experiment is verified, this emulation mould Type can reasonably extend to more metal acid-salts on semiconductor low-dimension nano material-semiconductor low-dimension nano material composite construction list Electron-transport between member, and the charge threshold a in modelTHWith charge barrier between equally exist corresponding relationship.
It is reproducibility molecule when being adsorbed on polyoxometallate-semiconductor low-dimension nano material composite construction cell surface When, the electronics transfer in reproducibility molecule is reduced into polyoxometallate-semiconductor low-dimension nano material composite construction unit Hole concentration in semiconductor low-dimension nano material, so that polyoxometallate-semiconductor low-dimension nano material composite construction Conductance reduce, the charge barrier between polyoxometallate-semiconductor low-dimension nano material composite construction unit increases, thus So that the electric pulse amplitude and frequency provided in the polyoxometallate-semiconductor low-dimension nano material neural network all subtract It is small.
It is oxidisability molecule when being adsorbed on polyoxometallate-semiconductor low-dimension nano material composite construction cell surface When, the electronics transfer in polyoxometallate-semiconductor low-dimension nano material composite construction unit into oxidation/reduction molecule, To increase the hole concentration in semiconductor low-dimension nano material, so that polyoxometallate-semiconductor low-dimension nano material The conductance of composite construction increases, the charge barrier between polyoxometallate-semiconductor low-dimension nano material composite construction unit Reduce so that the electric pulse amplitude provided in the polyoxometallate-semiconductor low-dimension nano material neural network and Frequency all increases；Changes of threshold amount can be inhaled by unit polyoxometallate-semiconductor low-dimension nano material composite structure surface Attached molecule type and number is regulated and controled.This corrects the parameters such as electron transport and threshold value in transmission mechanism, So that the electric pulse of composite construction generates the available certain regulation of behavior.
Present invention combination first-principles calculations, molecular network emulation and oxidation/reduction point based on cellular automata Conductance experimental data after son absorption illustrates the mechanism using oxidation/reduction molecular regulation molecule neural network electric pulse behavior And Examination on experimental operation.When being regulated and controled using oxidized form molecule, polyoxometallic acid molecules of salt and semiconductor low-dimensional nanometer Material can be taken away part electronics, so that polyoxometallate-semiconductor low-dimension nano material composite construction resistance increases, threshold value It increases, the electric pulse amplitude provided in molecular network and frequency is caused all to reduce；It is more when being regulated and controled using reproducibility molecule Oxometallic acid molecules of salt and semiconductor low-dimension nano material can be obtained part electronics, so that polyoxometallate-semiconductor is low Dimension nano material composite construction resistance reduces, and threshold value reduces, and the electric pulse amplitude provided in molecular network and frequency is caused all to rise It is high.
The following are embodiments:
Embodiment 1
One kind is by using NH3Gas modifies phosphomolybdic acid to reduce electric arteries and veins in phosphomolybdic acid/carbon nanotube molecule neural network The regulation method of the behaviors such as amplitude, the frequency of punching is wrapped from bottom to top by taking the molecular network cellular construction built at random as an example Include: growth has silicon chip substrate 6, the gate dielectric layer 5, membrane electrode 4, the carbon nanotube for being attached with polyoxometallate 2 of oxide layer 1, and the NH being adsorbed on phosphomolybdic acid molecule3, polyoxometallate is phosphomolybdic acid molecule here, and device architecture such as Fig. 4 shows；
NH3Modification phosphomolybdic acid molecule shows the more 0.041 electronics such as Figure 12 of phosphomolybdic acid molecule, as can see in Figure 13 It is passed through the NH of 5ppm concentration3Afterwards, changed 1.24% before and after the resistance of composite construction, the reason is that NH3Modification so that compound electric It leads and changes.
The preparation step of the regulation method and the ternary molecule neural network accordingly obtained is as follows:
(1) there is the silicon wafer of oxide layer as substrate using growth, using photoetching process, obtain the reversion of electrode in substrate surface Figure；
(2) Copper thin film of 90nm nickel film, 510nm are sequentially depositing on the surface of a substrate using magnetron sputtering；
(3) substrate is placed in acetone ultrasound 3min, removes the nickel copper film on photoresist and photoresist；It is sequentially placed into It is cleaned by ultrasonic 15min in ethyl alcohol, deionized water, obtains nickel copper electrode in substrate surface, electrode spacing is 1 μm, and electrode width is 4μm；
(4) carbon nanotube/DMF solution of 0.25 μ g/ml concentration and phosphomolybdic acid/DMF solution of 2.5 μ g/ml concentration is mixed Close ultrasound, ultrasonic power 300W, ultrasonic time 30h；Surface topography such as Figure 14, Figure 14 of carbon nanotube after phosphomolybdic acid modification For the carbon nano-tube AFM test image for adsorbing phosphomolybdic acid, the higher region of brightness is phosphomolybdic acid micel, and darker region is carbon Nanotube, phosphomolybdic acid packing of molecules are simultaneously adsorbed on carbon nano tube surface, and Figure 15 is the single carbon nanotube for being mounted in electrode both ends Scanning electron microscope (SEM) photograph, Figure 17 are the scanning electron microscope for being mounted in the phosphomolybdic acid at electrode both ends and the network of composite structure of carbon nano tube at random Figure；
(5) by nickel copper electrode to connection signal generator, the sinusoidal signal voltage of signal generator is 12Vpp, and frequency is 1MHz；Take phosphomolybdic acid/carbon nanotube mixed solution drop of 1 μ l in nickel copper electrode, the carbon nanometer for modifying phosphomolybdic acid with pipettor Pipe is assemblied between nickel copper electrode.
(6) by the phosphorus molybdenum in the carbon nanotube singly-terminal pair unit i.e. binary molecule neural network modified based on phosphomolybdic acid Acid-composite structure of carbon nano tube is exposed to 5ppm concentration NH3In atmosphere, obtain based on the NH3, phosphomolybdate and carbon nanometer The ternary molecule neural network that the composite construction of pipe three is built；The NH of 5ppm concentration atmosphere3Change network resistor 4.4% or so.
(7) first-principles calculations are used, the carbon nanotube (8,0) for analyzing phosphomolybdic acid molecular modification is single in absorption NH3The electric charge transfer of molecule, as shown in figure 16.Phosphomolybdic acid Molecular Adsorption makes in carbon nano tube surface, the oxidation characteristic of phosphomolybdic acid 3.47 electronics transfers in carbon nanotube generate hole in carbon nanotube, the ternary molecule neural network to phosphomolybdic acid molecule Shown in structure such as Fig. 3 (a).Specifically, when detection gas are NH30.26 electricity when equal reducibility gas, in gas molecule Son is transferred to phosphomolybdic acid molecule, reduces the electronics transfer between carbon nanotube and phosphomolybdic acid molecule, is transferred to carbon nanotube The electron amount of phosphomolybdic acid molecule reduces by 1.8 electronics to be made to increase between network to reduce hole concentration in carbon nanotube, Its composite construction and NH3Shown in the location drawing 3 (b) of absorption.
(8) NH is analyzed to emulating using the molecule neural network based on cellular automata3It is adsorbed on phosphomolybdic acid table Behind face, the charge transmission between base neural member meets Marcus electron transfer theory, does not add in cellular Automation Model emulation When adding any oxidation-reduction quality molecule, charge threshold aTHIt is 6, works as NH3When absorption, according to the variation ratio of corresponding charge barrier height Example, charge threshold aTHIt is 13, then the simulation result of pulse granting is as shown in figure 17, relative adsorption NH3Result is provided in preceding pulse Figure 18 compares, it can clearly be seen that electric pulse amplitude is reduced with frequency is provided in molecule neural network.
Embodiment 2
One kind is by using NO2Phosphomolybdic acid is modified to increase electric pulse in phosphomolybdic acid/carbon nanotube molecule neural network The regulation method of the behaviors such as amplitude, frequency includes: that growth has oxide layer by taking molecular network cellular construction as an example from bottom to top Silicon chip substrate 6, gate dielectric layer 5, membrane electrode 4, be attached with the carbon nanotube 1 of polyoxometallate 2, and be adsorbed on phosphorus molybdenum NO on acid molecule2, polyoxometallate is phosphomolybdic acid molecule here, and device architecture such as Fig. 4 shows；
NO2Phosphomolybdic acid molecule lack 0.062 electronics such as Figure 12 for modifying phosphomolybdic acid molecule to show, as can in Figure 13 To see the NO for being passed through 5ppm concentration2Afterwards, changed 3% before and after the resistance of composite construction, the reason is that NO2Modification so that multiple Conductance is closed to change.
The preparation step of the regulation method and the ternary molecule neural network accordingly obtained is as follows:
(1) there is the silicon wafer of oxide layer as substrate using growth, using photoetching process, obtain the reversion of electrode in substrate surface Figure；
(2) Copper thin film of 90nm nickel film, 510nm are sequentially depositing on the surface of a substrate using magnetron sputtering；
(3) substrate is placed in acetone ultrasound 3min, removes the nickel copper film on photoresist and photoresist；It is sequentially placed into It is cleaned by ultrasonic 15min in ethyl alcohol, deionized water, obtains nickel copper electrode in substrate surface, electrode spacing is 1 μm, and electrode width is 4μm；
(4) carbon nanotube/DMF solution of 0.25 μ g/ml concentration and phosphomolybdic acid/DMF solution of 2.5 μ g/ml concentration is mixed Close ultrasound, ultrasonic power 300W, ultrasonic time 30h；
(5) by nickel copper electrode to connection signal generator, the sinusoidal signal voltage of signal generator is 12Vpp, and frequency is 1MHz；Take phosphomolybdic acid/carbon nanotube mixed solution drop of 1 μ l in nickel copper electrode, the carbon nanometer for modifying phosphomolybdic acid with pipettor Pipe is assemblied between nickel copper electrode.
(6) by the phosphorus molybdenum in two end random network of the carbon nanotube i.e. binary molecule neural network modified based on phosphomolybdic acid Acid-composite structure of carbon nano tube is exposed to 5ppm concentration NO respectively2In atmosphere, obtain based on the NO2, phosphomolybdate and carbon The ternary molecule neural network that the composite construction of nanotube three is built.5ppm concentration NO2So that network resistor changes 3.5% or so.
(7) first-principles calculations are used, the carbon nanotube (8,0) for analyzing phosphomolybdic acid molecular modification is single in absorption NO2The electric charge transfer of molecule.Phosphomolybdic acid Molecular Adsorption makes in carbon nanotube in carbon nano tube surface, the oxidation characteristic of phosphomolybdic acid 3.47 electronics transfers generate hole in carbon nanotube to phosphomolybdic acid molecule.As oxidizing gas NO2It is adsorbed on phosphomolybdic acid molecule When upper, 0.51 electronics transfer in phosphomolybdic acid molecule enhances between carbon nanotube and phosphomolybdic acid molecule to gas molecule Electronics transfer, the electron amount for making carbon nanotube be transferred to phosphomolybdic acid molecule increases 0.9 electronics, to increase carbon nanotube Hole concentration, to reduce the resistance of network sensing element.
(8) NO is analyzed to emulating using the molecule neural network based on cellular automata2After regulation, basis mind Meet linear separability electron transfer theory through the charge transmission between member, works as NO2When absorption, according to corresponding charge barrier height Variation ratio, charge threshold aTHIt is 4, then the simulation result of pulse granting is as shown in figure 19, relative adsorption NO2Preceding pulse granting Result figure 18 compares, it can clearly be seen that electric pulse amplitude and granting frequency all increase in molecule neural network.
The technical problem to be solved by the present invention is to overcome in the prior art polyoxometallate-semiconductor nanowires/band/ The problem of electric pulse behavior in pipe composite network structure can not regulate and control provides a kind of how golden using oxidation/reduction molecular Control Belong to electric charge transfer and transmission mechanism in oxygen hydrochlorate-semiconductor nanowires/band/pipe composite network structure, obtains the width of its electric pulse The characteristics such as value, frequency, probability of happening, and a kind of corresponding implementation method, so that being made has required specific electric pulse row For polyoxometallate-semiconductor nanowires/band/pipe composite construction neural network.And it is emulated and is combined by first principle The mode of experiment to single-root carbon nano-tube/polyoxometallate charge transmission mechanism, utilizes this from theory to experimental verification Kind charge transmission mechanism demonstrates this tune by using network simulation result and part of test results based on cellular automata Control the feasibility of Method And Principle and realization.To be provided based on semiconductor nanowires/band/pipe-polyoxometallate building network A kind of feasible electric pulse regulates and controls method, so that study mechanism of its network application when artificial intelligence application is obtained with parameter Control, while this method has the characteristics that exploitativeness is strong, controllability is high and experiment is simple；The present invention also provides a kind of bases In the regulation method obtain ternary molecule neural network, the ternary molecule neural network be by the oxidation/reduction molecule, The ternary molecule neural network that polyoxometallate and the composite construction of semiconductor low-dimension nano material three are built.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all include Within protection scope of the present invention.

Claims (10)

1. a kind of utilize oxidation/reduction molecular regulation polyoxometallate-semiconductor low-dimension nano material neural network electric pulse The method of granting behavior, the neural network are based on the polyoxometallate-semiconductor low-dimension nano material composite construction The molecule neural network built, which is characterized in that by regulation oxidation/reduction molecule in the polyoxometallate-half The absorption of conductor low-dimension nano material composite structure surface changes between polyoxometallate and semiconductor low-dimension nano material Electric charge transfer to change polyoxometallate-semiconductor low-dimension nano material composite construction conductance, and then changes more metals Charge barrier and corresponding charge transmission mechanism between oxygen hydrochlorate-semiconductor low-dimension nano material composite construction unit, thus Regulate and control polyoxometallate-semiconductor low-dimension nano material neural network electric pulse and provides behavior；The oxidation/reduction molecule For the molecule that electron exchange can occur with the polyoxometallate or semiconductor low-dimension nano material；The semiconductor low-dimensional Nano material is semiconductor monodimension nanometer material or semiconductor two-dimension nano materials；
When reproducibility Molecular Adsorption is in polyoxometallate-semiconductor low-dimension nano material composite construction cell surface, portion Divide electronics transfer into polyoxometallate-semiconductor low-dimension nano material composite construction unit, reduces semiconductor low-dimensional and receive Hole concentration in rice material, so that polyoxometallate-semiconductor low-dimension nano material composite construction conductance reduces, it is mostly golden The charge barrier belonged between oxygen hydrochlorate-semiconductor low-dimension nano material composite construction unit increases, so that more metals The electric pulse amplitude and frequency provided in oxygen hydrochlorate-semiconductor low-dimension nano material neural network all reduce；
When oxidisability Molecular Adsorption is in polyoxometallate-semiconductor low-dimension nano material composite construction cell surface, from Electronics is obtained in polyoxometallate-semiconductor low-dimension nano material composite construction unit, is received to increase semiconductor low-dimensional Hole concentration in rice material, so that polyoxometallate-semiconductor low-dimension nano material composite construction conductance increases, it is mostly golden The charge barrier belonged between oxygen hydrochlorate-semiconductor low-dimension nano material composite construction unit reduces, so that more metals The electric pulse amplitude and frequency provided in oxygen hydrochlorate-semiconductor low-dimension nano material neural network all increase.
2. the method as described in claim 1, which is characterized in that by by the polyoxometallate-semiconductor low-dimensional nanometer Material cladding structure is immersed in the oxidation/reduction molecule environment, makes institute by standing, pressurization, heating or step mode Oxidation/reduction Molecular Adsorption is stated in the polyoxometallate-semiconductor low-dimension nano material composite structure surface.
3. the method as described in claim 1, which is characterized in that by the polyoxometallate-semiconductor low-dimension nano material Composite construction is placed in closed container, after extracting vacuum, is passed through nitrogen or inert gas to normal pressure, then be passed through required type with it is dense The oxidation/reduction molecule of degree makes it as regulation source for regulating and controlling conductance, charge barrier and the charge of the composite construction Transmission mechanism.
4. the method as described in claim 1, which is characterized in that the structure of the molecule neural network includes: lining from bottom to top The semiconductor low-dimension nano material at bottom, membrane electrode and polyoxometallate molecular modification；The polyoxometallic acid molecules of salt The semiconductor low-dimension nano material of modification is the polyoxometallate-semiconductor low-dimension nano material composite construction；
The membrane electrode is the composite film electrode of metal film electrode, Graphene electrodes or graphene and transition metal；Institute Stating membrane electrode is multiple, composition thin film electrode array；
The semiconductor low-dimension nano material of the polyoxometallate molecular modification is to have adsorbed polyoxometallic acid molecules of salt The semiconductor low-dimension nano material of semiconductor low-dimension nano material, the polyoxometallate molecular modification is erected at the film Between electrode.
5. the method as described in claim 1, which is characterized in that the semiconductor low-dimension nano material be semiconductor nanowires, Semiconductor nano-strip or semiconducting nanotubes；
The oxidation/reduction molecule is oxidation/reduction gas molecule, oxidation/reduction fluid molecule or oxidation/reduction solid point Son.
6. a kind of ternary molecule neural network regulated and controled based on method such as described in any one of claim 1 to 5, feature It is, which is based on the oxidation/reduction molecule, polyoxometallate and semiconductor low-dimensional nanometer The ternary molecule neural network that the composite construction of material three is built.
7. ternary molecule neural network as claimed in claim 6, which is characterized in that the structure of the ternary molecule neural network Include: from bottom to top substrate, membrane electrode, polyoxometallate molecular modification semiconductor low-dimension nano material and be adsorbed on The polyoxometallate-semiconductor low-dimension nano material composite structure surface oxidation/reduction molecule.
8. ternary molecule neural network as claimed in claim 7, which is characterized in that the system of the ternary molecule neural network It is standby, include the following steps:
(1) thin film electrode array of pulse signal acquisition is used in substrate surface preparation；
(2) by the solution ultrasonic mixing of the solution of semiconductor low-dimension nano material and polyoxometallate, more metals are prepared The semiconductor low-dimension nano material mixed solution of oxygen hydrochlorate molecular modification；
(3) dielectrophoresis technology is used, the semiconductor low-dimension nano material mixed solution of polyoxometallate molecular modification is dripped Enter between membrane electrode, be passed through alternating voltage, so that polyoxometallate-semiconductor low-dimension nano material composite construction dress It is fitted between membrane electrode；Then by organic solvent drop in the electrodes between remove remaining polyoxometallic acid salting liquid, obtain base The binary molecule neural network of composition is built in the polyoxometallate-semiconductor low-dimension nano material composite construction；
(4) polyoxometallate in the binary molecule neural network-semiconductor low-dimension nano material composite construction is immersed In the oxidation/reduction molecule environment, so that the oxidation/reduction Molecular Adsorption is in the polyoxometallate-semiconductor Low-dimension nano material composite structure surface obtains the ternary molecule neural network.
9. ternary molecule neural network as claimed in claim 7, which is characterized in that the system of the ternary molecule neural network It is standby, include the following steps:
(1) thin film electrode array of pulse signal acquisition is used in substrate surface preparation；
(2) by semiconductor low-dimension nano material solution and polyoxometallic acid salting liquid ultrasonic mixing, polyoxometallic acid salinity is prepared The semiconductor low-dimension nano material mixed solution of son modification；
(3) the semiconductor low-dimension nano material mixed solution of the polyoxometallate molecular modification obtained to step (2) carries out film Filtering, will be covered on multi-electrode containing semiconductor low-dimension nano material/polyoxometallate in obtained filtration membrane on one side On array, filtration membrane is dissolved with organic solvent and is removed, obtained based on the polyoxometallate-semiconductor low-dimensional nanometer material Material composite construction builds the binary molecule neural network of composition；
(4) polyoxometallate in the binary molecule neural network-semiconductor low-dimension nano material composite construction is immersed In the oxidation/reduction molecule environment, so that the oxidation/reduction Molecular Adsorption is in the polyoxometallate-semiconductor Low-dimension nano material composite structure surface obtains the ternary molecule neural network.
10. ternary molecule neural network as claimed in claim 7, which is characterized in that the preparation of the molecule neural network, packet Include following steps:
(1) thin film electrode array of pulse signal acquisition is used in substrate surface preparation；
(2) dielectrophoresis technology is used, by the assembly of semiconductor low-dimension nano material between membrane electrode, then by multi-metal oxygen Acid salt solution drips between the membrane electrode, stands 1-2 hours；
(3) organic solvent drop is removed between the membrane electrode remaining polyoxometallic acid salting liquid, obtained based on described Polyoxometallate-semiconductor low-dimension nano material composite construction builds the binary molecule neural network of composition；
(4) polyoxometallate in the binary molecule neural network-semiconductor low-dimension nano material composite construction is immersed In the oxidation/reduction molecule environment, so that the oxidation/reduction Molecular Adsorption is in the polyoxometallate-semiconductor Low-dimension nano material composite structure surface obtains the ternary molecule neural network.
CN201910699882.8A 2019-07-31 2019-07-31 Method for regulating and controlling electric pulse distribution behavior of nano molecular neural network Active CN110443345B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910699882.8A CN110443345B (en) 2019-07-31 2019-07-31 Method for regulating and controlling electric pulse distribution behavior of nano molecular neural network

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910699882.8A CN110443345B (en) 2019-07-31 2019-07-31 Method for regulating and controlling electric pulse distribution behavior of nano molecular neural network

Publications (2)

Publication Number Publication Date
CN110443345A true CN110443345A (en) 2019-11-12
CN110443345B CN110443345B (en) 2021-10-08

Family

ID=68432357

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910699882.8A Active CN110443345B (en) 2019-07-31 2019-07-31 Method for regulating and controlling electric pulse distribution behavior of nano molecular neural network

Country Status (1)

Country Link
CN (1) CN110443345B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113268866A (en) * 2021-05-13 2021-08-17 国网山东省电力公司电力科学研究院 Calculating C under the action of electric field5F10Method for adsorbing O insulating gas on copper surface
CN115407607A (en) * 2022-06-28 2022-11-29 大连理工大学 Application of zinc oxide cluster compound in field of photoresist

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7801591B1 (en) * 2000-05-30 2010-09-21 Vladimir Shusterman Digital healthcare information management
CN106650922A (en) * 2016-09-29 2017-05-10 清华大学 Hardware neural network conversion method, computing device, compiling method and neural network software and hardware collaboration system
CN109460819A (en) * 2018-10-25 2019-03-12 清华大学 It is a kind of for simulating the method and device of organism light cynapse
CN109682866A (en) * 2019-01-07 2019-04-26 华中科技大学 Carbon nano-tube gas-sensitive sensors based on phosphomolybdic acid molecular modification

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7801591B1 (en) * 2000-05-30 2010-09-21 Vladimir Shusterman Digital healthcare information management
CN106650922A (en) * 2016-09-29 2017-05-10 清华大学 Hardware neural network conversion method, computing device, compiling method and neural network software and hardware collaboration system
CN109460819A (en) * 2018-10-25 2019-03-12 清华大学 It is a kind of for simulating the method and device of organism light cynapse
CN109682866A (en) * 2019-01-07 2019-04-26 华中科技大学 Carbon nano-tube gas-sensitive sensors based on phosphomolybdic acid molecular modification

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
SHUIYUAN WANG ET AL.: "A MoS2/PTCDA Hybrid Heterojunction Synapse with Efficient Photoelectric Dual Modulation and Versatility", 《ADWANCED MATERIALS》 *
李莹莉: "基于PCNE的电子突触可塑性仿真研究", 《万方》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113268866A (en) * 2021-05-13 2021-08-17 国网山东省电力公司电力科学研究院 Calculating C under the action of electric field5F10Method for adsorbing O insulating gas on copper surface
CN115407607A (en) * 2022-06-28 2022-11-29 大连理工大学 Application of zinc oxide cluster compound in field of photoresist

Also Published As

Publication number Publication date
CN110443345B (en) 2021-10-08

Similar Documents

Publication Publication Date Title
Choi et al. Synthesis and gas sensing performance of ZnO–SnO2 nanofiber–nanowire stem-branch heterostructure
Yoo et al. Performance enhancement of electronic and energy devices via block copolymer self‐assembly
Chani et al. Fabrication and investigation of cellulose acetate-copper oxide nano-composite based humidity sensors
US7857959B2 (en) Methods of fabricating nanowires and electrodes having nanogaps
Pilarczyk et al. Molecules, semiconductors, light and information: Towards future sensing and computing paradigms
CN110443345A (en) A method of regulation nano molecular neural network electric pulse provides behavior
KR101878343B1 (en) Method of measuring hydrogen gas using sensor for hydrogen gas
Kouhestanian et al. Electrodeposited ZnO thin film as an efficient alternative blocking layer for TiCl4 pre-treatment in TiO2-based dye sensitized solar cells
JP2009008476A (en) Hydrogen gas sensor and its manufacturing method
CN110085449A (en) Print energy accumulating device and its film and the ink for printing film
Lu et al. Investigation of the electrochemical behavior of multilayers film assembled porphyrin/gold nanoparticles on gold electrode
CN108333227B (en) Flexible gas sensor and preparation method thereof
Sheng et al. An ultra-sensitive label-free immunosensor toward alpha-fetoprotein detection based on three–dimensional ordered IrOx inverse opals
Gence et al. Structural and electrical characterization of hybrid metal-polypyrrole nanowires
Tabatabaei et al. High‐performance immunosensor for urine albumin using hybrid architectures of ZnO nanowire/carbon nanotube
CN104034773A (en) Gold film microelectrode array and manufacture method thereof
KR102013825B1 (en) Hydrogen gas sensor and Fabrication method of the same
Zhang et al. NiCoBP-doped carbon nanotube hybrid: A novel oxidase mimetic system for highly efficient electrochemical immunoassay
Zhou et al. Realize low-power artificial photonic synapse based on (Al, Ga) N nanowire/graphene heterojunction for neuromorphic computing
Ding et al. Recent progress in chemiresistive gas sensors with 1D nanostructured sensing materials: Insights into the structure-morphology-performance relationship
Beugré et al. Local electrochemistry of nickel (oxy) hydroxide material gradients prepared using bipolar electrodeposition
Antuch et al. A comparison of water photo-oxidation and photo-reduction using photoelectrodes surface-modified by deposition of co-catalysts: Insights from photo-electrochemical impedance spectroscopy
Zhang et al. Efficient photoconversion and charge separation of a (Mn2+-Fe2O3)/reduced graphene oxide/(Fe3+-WO3) photoelectrochemical anode via band-structure modulation
Chopin et al. Memristive and tunneling effects in 3D interconnected silver nanowires
CN107293581B (en) Thin film transistor and manufacturing method and application method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant