CN110429195A - Thin-film packing structure and preparation method thereof and display panel - Google Patents
Thin-film packing structure and preparation method thereof and display panel Download PDFInfo
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- CN110429195A CN110429195A CN201810980170.9A CN201810980170A CN110429195A CN 110429195 A CN110429195 A CN 110429195A CN 201810980170 A CN201810980170 A CN 201810980170A CN 110429195 A CN110429195 A CN 110429195A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
The present invention relates to thin-film packing structures and preparation method thereof and display panel, and wherein thin-film packing structure includes the first inorganic barrier layer, organic planarization layer, the second inorganic barrier layer and the scattering layer of stacking, and scattering layer has nano-porous structure.The thin-film packing structure is effectively prevented from the presence of wide-angle interference and influences the viewing angle characteristic of device, can obtain better picture effect on the basis of with stronger water oxygen obstructing capacity.
Description
Technical field
The present invention relates to technical field of electronic devices, in particular to thin-film packing structure and preparation method thereof and display surface
Plate.
Background technique
Thin-film package (TFE) is the encapsulation technology suitable for organic luminescent device, especially narrow frame and flexible organic hair
Optical diode (OLED) panel, typical packaging film repeat to form by inorganic material layer and organic material layer are overlapping.Wherein, nothing
Machine material layer is water oxygen barrier layer, and main function is barrier water oxygen.Organic material layer is planarization layer, and main function is covering nothing
The defect of machine material surface provides a flat surface for subsequent film forming.
In the OLED device of top emitting, microcavity effect has the effects that selection to light source, narrows and reinforce, and is often used to
The coloration of device, the emissive porwer for reinforcing specific wavelength and the luminescent color for changing device etc. are improved, but due to wide-angle interference
Presence will affect the viewing angle characteristic of device, i.e., with the offset at visual angle, glow peak shifts, and leads to the difference and coloration of brightness
Drift the problems such as.Especially under big visual angle, optical property is bad, and color difference is more serious.This problem is for large scale OLED
Particularly important for screen, too small effective visual angle can make the different zones of screen appear to have in apparent brightness and color
Difference, affect the display effect of overall picture.
Summary of the invention
Based on this, it is necessary to provide a kind of effective visual angle for being capable of increasing organic luminescent device thin-film packing structure and its
Preparation method and display panel.
A kind of thin-film packing structure is used for encapsulated electroluminescent device, the first inorganic barrier layer including stacking, organic planarization
Layer, the second inorganic barrier layer and scattering layer；The scattering layer has nano-porous structure.
Above-mentioned thin-film packing structure can effectively be increased light scattering and be made by the scattering layer of setting nano-porous structure
With can be received in bigger angular range, increase effective visual angle of organic luminescent device.And pass through setting nothing
The infiltration of water and oxygen can be effectively avoided in machine barrier layer, enhances water oxygen obstructing capacity, protects endothecium structure；By being provided with
Machine planarization layer provides an even curface for subsequent film forming, and can also cover the defect of inorganic layer surface, eliminates remnants and answers
Power enhances the water oxygen obstructing capacity of above-mentioned thin-film packing structure.So that above-mentioned thin-film packing structure is hindered with stronger water oxygen
On the basis of ability, it is effectively prevented from the presence of wide-angle interference and influences the viewing angle characteristic of device, better picture can be obtained
Face effect.
In one embodiment, the aperture of the hole of the nano-porous structure is 200nm-500nm.
In one embodiment, the aperture of the hole of the nano-porous structure is 350nm-450nm.
In one embodiment, the scattering layer with a thickness of 4 μm -10 μm.
In one embodiment, the scattering layer is nano-porous structure organic film.
In one embodiment, the scattering layer is mainly by acetylbutyrylcellulose, polystyrene and polymethyl
One of sour methyl esters a variety of is prepared；And the scattering layer with a thickness of 4 μm -10 μm.
In one embodiment, be additionally provided between first inorganic barrier layer and the organic planarization layer third without
Machine barrier layer；First inorganic barrier layer with a thickness of 20nm-30nm；Second inorganic barrier layer and the third are inorganic
Barrier layer with a thickness of 0.5 μm -1.5 μm.
In one embodiment, first inorganic barrier layer is mainly prepared by metal oxide.
In one embodiment, the metal oxide is Al2O3、TiO2And ZrO2One of or it is a variety of.
In one embodiment, second inorganic barrier layer and the third inorganic barrier layer are mainly by siliceous inorganic
Object is prepared.
In one embodiment, the siliceous inorganic matter is nitrogen silicide or oxygen silicide.
In one embodiment, the organic planarization layer is mainly by polymethyl methacrylate and epoxy resin
It is one or more to be prepared, and the organic planarization layer with a thickness of 4-10 μm.
The preparation method of above-mentioned thin-film packing structure, comprising the following steps:
Form the first inorganic barrier layer；
Organic planarization layer is formed in first inorganic barrier layer；
The second inorganic barrier layer is formed on the organic planarization layer；
Being formed in second inorganic barrier layer has the scattering layer of nano-porous structure to get the thin-film package knot
Structure.
In one embodiment, the scattering layer with nano-porous structure is formed in second inorganic barrier layer
Step the following steps are included:
Printing is used to form the organic material of scattering layer in second inorganic barrier layer；
It is placed in the environment that humidity is 60%-95% and forms nano-porous structure organic film to get the scattering layer.
In one embodiment, it is placed in the environment that humidity is 60%-95% to be formed and there is having for nano-porous structure
The step of machine film the following steps are included:
It is placed in the environment that humidity is 60%-95%, drying is organic to get nano-porous structure after standing 5min-60min
Film.
In one embodiment, the method for using ultrasonic atomizatio makes ambient humidity 60%-95%.
In one embodiment, first inorganic barrier layer is formed by the method for atomic layer deposition；And/or
Second inorganic barrier layer is formed by the method for chemical vapor deposition；And/or
The third inorganic barrier layer is formed by the method for chemical vapor deposition.
In one embodiment, the step of forming the organic planarization layer the following steps are included:
Printing is used to form the organic material of the organic planarization layer in first inorganic barrier layer, through levelling and
Up to the organic planarization layer after ultra-violet curing.
A kind of display panel, the above-mentioned thin-film packing structure including luminescent device and the encapsulation luminescent device, and institute
It states scattering layer and compares first inorganic barrier layer further from the luminescent device.
Above-mentioned display panel has the thin-film packing structure of above structure by setting, on the one hand can be effectively avoided
Water, Oxygen permeation extend the service life of display panel, on the other hand can effectively increase effective visual angle of luminescent device, obtain
Obtain better picture effect.
Detailed description of the invention
Fig. 1 is the schematic diagram of the display panel of an embodiment.
Specific embodiment
To facilitate the understanding of the present invention, below will to invention is more fully described, and give it is of the invention compared with
Good embodiment.But the invention can be realized in many different forms, however it is not limited to embodiment described herein.Phase
Instead, purpose of providing these embodiments is makes the disclosure of the present invention more thorough and comprehensive.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention
The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein "and/or" includes one or more phases
Any and all combinations of the listed item of pass.
As shown in Figure 1, the display panel 10 of one embodiment of the present invention includes luminescent device 200 and encapsulated electroluminescent device
200 above-mentioned thin-film packing structure 100.Correspondingly, the preparation method of display panel 10 is provided.It below will be to display panel
10 structure and preparation method thereof describes in detail.
Wherein, luminescent device 200 includes oled layer 201 and substrate 202.Oled layer 201 is formed on substrate 202.
Above-mentioned thin-film packing structure 100 includes the first inorganic barrier layer 101 of stacking, organic planarization layer 103, the second nothing
Machine barrier layer 104 and scattering layer 105, wherein scattering layer 105 has nano-porous structure.
Above-mentioned thin-film packing structure 100 is used for encapsulated electroluminescent device, which can emit OLED device for flexible top
Part is not specially limited herein.
Wherein, the first inorganic barrier layer 101 is used to cover the oled layer 201 of luminescent device, to prevent the infiltration of water, oxygen
Enter.First can be formed by the methods of chemical vapour deposition technique, atomic layer deposition method, pulsed laser deposition or sputtering method
Inorganic barrier layer 101.It is preferred that forming the first inorganic barrier layer, the inorganic barrier that this method is formed by the method for atomic layer deposition
Layer has the features such as uniform, fine and close, step coverage is good, and water oxygen obstructing capacity is strong, can completely cover the surface of oled layer, have
Effect prevents the infiltration of water and oxygen.
In addition in some specific examples, third inorganic barrier layer can also be set in the first inorganic barrier layer 101
102, the water and oxygen barrier property of thin-film packing structure can be further enhanced by the way that the double-deck inorganic barrier layer is arranged, is effectively prevented from
The infiltration of water and oxygen.Can by chemical vapour deposition technique (CVD), atomic layer deposition method (ALD), pulsed laser deposition or
The methods of sputtering method forms third inorganic barrier layer 102.It is preferred that by the method for chemical vapor deposition in the first inorganic barrier
Third inorganic barrier layer is formed on layer, this method has faster deposition rate, can obtain in a short time relatively thick
Film is conducive to the water oxygen barrier property for further enhancing the thin-film packing structure.
Above-mentioned inorganic barrier layer can be had the inorganic material of waterproof performance to prepare by metal oxide, silicon-containing compound etc.
It forms.In one embodiment, the first inorganic barrier layer 101 is prepared by metal oxide.The metal oxide can be
Al2O3、TiO2And ZrO2One of or it is a variety of.Metal oxide can form fine and close film, and effectively enhanced film encapsulates
The water oxygen barrier property of structure.
In one embodiment, third inorganic barrier layer 102 is prepared by silicon-containing compound.The silicon-containing compound can be
One of oxygen silicide, nitrogen silicide are a variety of.Such compound and organic material have preferable adhesion, are conducive to
The formation of machine planarization layer.
In addition, the thickness of the first inorganic barrier layer and third inorganic barrier layer can carry out suitably according to selected preparation process
Adjusting.In one embodiment, the first inorganic barrier layer is formed by ALD technique and passes through CVD skill with a thickness of 20nm-30nm
Art forms third inorganic barrier layer, with a thickness of 0.5 μm -1.5 μm.One layer of densification and relatively thin first is formed by ALD first
Then inorganic barrier layer forms one layer of relatively thick third inorganic barrier layer by CVD technology, it is ensured that the thin-film package
While the blocking water of structure, oxygen resistance, keep the integral thickness of the thin-film packing structure smaller, to avoid influencing colour developing panel
Translucency.
Organic planarization layer 103 can be formed by the method for inkjet printing, and be formed with by levelling and ultra-violet curing
Machine planarization layer, this method can form the uniform organic planarization layer in surface and disappear effective over the defect of inorganic layer surface
Except residual stress, and then the water oxygen obstructing capacity of enhanced film encapsulating structure.The organic planarization layer can be by polymethyl
The organic materials such as sour methyl esters and epoxy resin are prepared, the organic planarization layer 103 with a thickness of 4 μm -10 μm.
The second inorganic barrier layer 104 is formed on organic planarization layer 103, for further preventing water, oxygen etc.
It penetrates into, protects endothecium structure, prolong the service life.Second inorganic barrier layer 104 can be by metal oxide, silicon-containing compound etc.
Inorganic material with waterproof performance is prepared.It can be heavy by chemical vapour deposition technique, atomic layer deposition method, pulse laser
It is prepared by the methods of area method or sputtering method.It is preferred that the method by chemical deposition forms the second inorganic resistance on organic planarization layer
Interlayer, this method have faster deposition rate, can obtain relatively thick film in a short time, are conducive to protect internal layer
Structure enhances the water oxygen barrier property of the thin-film packing structure.
In one embodiment, the second inorganic barrier layer 104 is prepared by siliceous inorganic matter, with a thickness of 0.5 μm of -1.5 μ
m.By the thickness control of the second inorganic barrier layer can be enhanced in the range the blocking water of thin-film packing structure, oxygen resistance it is same
When, guarantee translucency.The material and thickness of third inorganic barrier layer 102 can be identical or different with the second inorganic barrier layer 104.
Scattering layer 105 is provided in the second inorganic barrier layer 104, and scattering layer 105 has nano-porous structure.Pass through
The scattering layer of nano-porous structure is set, light scattering process can be effectively increased, it can be in bigger angular range
It is received, increases effective visual angle of organic luminescent device.
Corresponding organic material layer can be formed in the second inorganic barrier layer by the methods of inkjet printing, spin coating, so
Nano-porous structure is formed by the methods of ultrasonic atomizatio method, nanometer embossing, photoengraving afterwards.
In one embodiment, dissipating with nano-porous structure is formed in the second inorganic barrier layer by ultrasonic atomizatio method
Penetrate layer.This method can make the aperture of formed nano-porous structure smaller, and cavity is evenly distributed.Wherein, inorganic second
On barrier layer formed there is the step of scattering layer of nano-porous structure the following steps are included:
(1) organic material for being used to form scattering layer is printed in the second inorganic barrier layer；
(2) it is placed in the environment that humidity is 60%-95% and forms nano-porous structure organic film to get scattering layer.
In addition, step (2) can be the following steps are included: be placed in humidity in the environment of 60%-95%, as defined in standing
It dries after time to get nano-porous structure organic film.Wherein, the time of standing is not particularly limited, in one embodiment, quiet
Set 5min-60min.
After printing is used to form the organic material of scattering layer in the second inorganic barrier layer, organic thin film layer is formed, this is thin
Film layer is placed in the environment that humidity is 60%-95%, and water mist can condense on its surface, and sink under gravity, dry
After can form that hole is smaller and the higher nano-porous structure organic film of the uniformity, and it is needle that this method, which is formed by cavity,
Hole has preferable scattering process, can effectively increase effective visual angle of organic luminescent device.In addition, the preparation method is simple
Easy row is suitable for industrial production application without specific apparatus and special expertise requirement.
It should be noted that can also include the steps that drying before step (2) after step (1), i.e., in the second nothing
After printing is used to form the organic material of scattering layer on machine barrier layer, partial solvent is dried and removed, then being placed in humidity is 60%-
Nano-porous structure organic film is formed in 95% environment, is not specially limited herein.Wherein, organic material of scattering layer is formed
Material can be one of acetylbutyrylcellulose, polystyrene and polymethyl methacrylate or a variety of.Dissolve organic material
Solvent can be one of tetrahydrofuran and toluene or a variety of.The scattering that above-mentioned organic material can effectively enhance light is made
With effectively improving effective visual angle of display panel.Above-mentioned solvent can guarantee that it is preferable deliquescent that organic material has
Under the premise of, there is suitable hydrophilic interaction, guarantee that formed nano-porous structure has preferable scattering process.In an embodiment
In, be formed by nano-porous structure organic film with a thickness of 4 μm -10 μm.
In addition, the shape and arranging rule of the hole of above-mentioned nano-porous structure are not particularly limited, it can be pin hole,
It can be zigzag etc..Wherein, the aperture of the nano-porous structure is preferably 200nm-500nm, and aperture is 200nm-500nm's
Nano-porous structure can effectively improve light scattering effect, guarantee that light has certain scattering angle, effectively improve OLED
Effective visual angle of chromogenic device.In one embodiment, the aperture of the hole of nano-porous structure is 350nm-450nm.
Above-mentioned display panel 10 has the thin-film packing structure 100 of above structure by setting, on the one hand can be effectively
Water, Oxygen permeation are avoided, the service life of display panel is extended, on the other hand can effectively increase the effective of organic luminescent device
Visual angle obtains better picture effect.
Specific embodiment is set forth below, and invention is further explained.
Embodiment 1
As shown in Figure 1, the display panel 10 of embodiment 1 includes the film of organic luminescent device 200 and encapsulated electroluminescent device
Encapsulating structure 100.Specifically, luminescent device 200 includes oled layer 201 and substrate 202, and thin-film packing structure 100 includes successively
The first inorganic barrier layer 101, the third inorganic barrier layer 102, organic planarization layer 103,104 and of the second inorganic barrier layer of stacking
Scattering layer 105.And scattering layer 105 is the nanoporous organic film that aperture is 350nm-450nm.
The preparation method of the thin-film packing structure of the display panel of embodiment 1 the following steps are included:
(1) 20-30nm aluminium oxide is deposited on luminescent device 200 by the method for atomic layer deposition, preparation first is inorganic
Barrier layer 101 covers exposed oled layer by the first inorganic barrier layer 101；
(2) 0.5 μm -1.5 μm of nitridation is deposited in the first inorganic barrier layer 101 by the method for chemical vapor deposition
Silicon prepares third inorganic barrier layer 102；
(3) one layer 4-10 μm of methyl methacrylate is printed in third inorganic barrier layer 102 using inkjet printing instrument
Ester monomer obtains organic planarization layer 103 through levelling and ultra-violet curing；
(4) 0.5 μm -1.5 μm of silicon nitride is deposited on organic planarization layer 103 using the method for chemical vapor deposition,
Prepare the second inorganic barrier layer 104；
(5) one layer of solution (solvent is tetrahydrofuran) for being dissolved with acetylbutyrylcellulose is deposited using inkjet printing, it will
Substrate is placed in humidity (water mist) lower 10 minutes of 90%, then toasts 5 minutes at 80 DEG C, obtain 4-10 μm with nanometer pin hole
Organic polymer thin film, as scattering layer 105 to get the display panel of embodiment 1.
Embodiment 2
As shown in Figure 1, the display panel 10 of embodiment 2 includes the thin-film package of luminescent device 200 and encapsulated electroluminescent device
Structure 100.Specifically, organic luminescent device 200 includes oled layer 201 and substrate 202, and thin-film packing structure 100 includes successively
The first inorganic barrier layer 101, the third inorganic barrier layer 102, organic planarization layer 103,104 and of the second inorganic barrier layer of stacking
Scattering layer 105.And scattering layer 105 is the nanoporous organic film that aperture is 250nm-350nm.
The preparation method of the thin-film packing structure of the display panel of embodiment 2 the following steps are included:
(1) 20-30nm titanium oxide, preparation first are deposited on organic luminescent device 200 by the method for atomic layer deposition
Inorganic barrier layer 101 covers exposed oled layer by the first inorganic barrier layer 101；
(2) 0.5 μm -1.5 μm of nitridation is deposited in the first inorganic barrier layer 101 by the method for chemical vapor deposition
Silicon prepares third inorganic barrier layer 102；
(3) one layer 4-10 μm of epoxy monomer is printed in third inorganic barrier layer 102 using inkjet printing instrument,
Through levelling and ultra-violet curing, organic planarization layer 103 is obtained；
(4) 0.5 μm -1.5 μm of silicon nitride is deposited on organic planarization layer 103 using the method for chemical vapor deposition,
Prepare the second inorganic barrier layer 104；
(5) one layer of solution (solvent is toluene) for being dissolved with polystyrene is deposited using inkjet printing, substrate is placed in
Lower 10 minutes of 80% humidity (water mist), then toasted 8 minutes at 80 DEG C, it obtains 4-10 μm of the organic of nanometer pin hole that have and gathers
Object film is closed, as scattering layer 105 to get the display panel of embodiment 2.
Embodiment 3
As shown in Figure 1, the display panel 10 of embodiment 3 includes the thin-film package of luminescent device 200 and encapsulated electroluminescent device
Structure 100.Specifically, luminescent device 200 includes oled layer 201 and substrate 202, and thin-film packing structure 100 includes stacking gradually
The first inorganic barrier layer 101, third inorganic barrier layer 102, organic planarization layer 103, the second inorganic barrier layer 104 and scattering
Layer 105.And scattering layer 105 is the nanoporous organic film that aperture is 350nm-450nm.
The preparation method of the thin-film packing structure of the display panel of embodiment 3 the following steps are included:
(1) 20-30nm aluminium oxide, preparation first are deposited on organic luminescent device 200 by the method for atomic layer deposition
Inorganic barrier layer 101 covers exposed oled layer by the first inorganic barrier layer 101；
(2) 0.5 μm -1.5 μm of nitridation is deposited in the first inorganic barrier layer 101 by the method for chemical vapor deposition
Silicon prepares third inorganic barrier layer 102；
(3) one layer 4-10 μm of methyl methacrylate is printed in third inorganic barrier layer 102 using inkjet printing instrument
Ester monomer obtains organic planarization layer 103 through levelling and ultra-violet curing；
(4) 0.5 μm -1.5 μm of silicon nitride is deposited on organic planarization layer 103 using the method for chemical vapor deposition,
Prepare the second inorganic barrier layer 104；
(5) one layer of solution (solvent is tetrahydrofuran) for being dissolved with acetylbutyrylcellulose is deposited using inkjet printing, done
By light nanometer embossing after dry, porous structure is formed, void shape is huge tooth form, obtains scattering layer to get the aobvious of embodiment 3
Show panel.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. a kind of thin-film packing structure, it to be used for encapsulated electroluminescent device, which is characterized in that the first inorganic barrier layer including stacking,
Organic planarization layer, the second inorganic barrier layer and scattering layer；The scattering layer has nano-porous structure.
2. thin-film packing structure according to claim 1, which is characterized in that the aperture of the hole of the nano-porous structure
For 200nm-500nm.
3. thin-film packing structure according to claim 1 or 2, which is characterized in that the scattering layer with a thickness of 4 μm of -10 μ
m。
4. thin-film packing structure according to claim 1 or 2, which is characterized in that the scattering layer is nano-porous structure
Organic film.
5. thin-film packing structure according to claim 4, which is characterized in that the scattering layer is mainly by acetate butyrate fiber
One of element, polystyrene and polymethyl methacrylate a variety of are prepared.
6. thin-film packing structure according to claim 1 or 2, which is characterized in that first inorganic barrier layer and described
Third inorganic barrier layer is additionally provided between organic planarization layer；
First inorganic barrier layer with a thickness of 20nm-30nm；
Second inorganic barrier layer and the third inorganic barrier layer with a thickness of 0.5 μm -1.5 μm.
7. a kind of preparation method of thin-film packing structure, which comprises the following steps:
Form the first inorganic barrier layer；
Organic planarization layer is formed in first inorganic barrier layer；
The second inorganic barrier layer is formed on the organic planarization layer；
Being formed in second inorganic barrier layer has the scattering layer of nano-porous structure to get the thin-film packing structure.
8. preparation method according to claim 7, which is characterized in that formed to have in second inorganic barrier layer and be received
Rice porous structure scattering layer the step of the following steps are included:
Printing is used to form the organic material of scattering layer in second inorganic barrier layer；
It is placed in the environment that humidity is 60%-95% and forms nano-porous structure organic film to get the scattering layer.
9. preparation method according to claim 7, which is characterized in that first inorganic barrier layer passes through atomic layer deposition
Method formed；And/or
Second inorganic barrier layer is formed by the method for chemical vapor deposition；And/or
The third inorganic barrier layer is formed by the method for chemical deposition.
10. a kind of display panel, which is characterized in that appoint including luminescent device and the claim 1-6 for encapsulating the luminescent device
Thin-film packing structure described in one, and the scattering layer compares first inorganic barrier layer further from the luminescent device.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2021174598A1 (en) * | 2020-03-05 | 2021-09-10 | 武汉华星光电半导体显示技术有限公司 | Display panel and manufacturing method for display panel |
| US11659730B2 (en) | 2020-03-05 | 2023-05-23 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel having an encapsulation layer comprises plurality of protrusions and manufacturing method having the same thereof |
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