CN110429122A - Silicon substrate micro display screen and preparation method thereof - Google Patents
Silicon substrate micro display screen and preparation method thereof Download PDFInfo
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- CN110429122A CN110429122A CN201910724844.3A CN201910724844A CN110429122A CN 110429122 A CN110429122 A CN 110429122A CN 201910724844 A CN201910724844 A CN 201910724844A CN 110429122 A CN110429122 A CN 110429122A
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- silicon substrate
- display screen
- micro display
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 65
- 239000010703 silicon Substances 0.000 title claims abstract description 65
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 65
- 239000000758 substrate Substances 0.000 title claims abstract description 65
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000010410 layer Substances 0.000 claims abstract description 108
- 238000005530 etching Methods 0.000 claims abstract description 32
- 239000011241 protective layer Substances 0.000 claims abstract description 22
- 239000010408 film Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000010409 thin film Substances 0.000 claims abstract description 16
- 230000001681 protective effect Effects 0.000 claims abstract description 14
- 238000005538 encapsulation Methods 0.000 claims abstract description 11
- 238000005516 engineering process Methods 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 2
- 229920002627 poly(phosphazenes) Polymers 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 8
- 239000001301 oxygen Substances 0.000 abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 abstract description 8
- 239000000243 solution Substances 0.000 description 10
- 230000006872 improvement Effects 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000011265 semifinished product Substances 0.000 description 5
- 238000002161 passivation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000002362 mulch Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/88—Dummy elements, i.e. elements having non-functional features
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention provides a kind of silicon substrate micro display screen and preparation method thereof, the silicon substrate micro display screen preparation method is the following steps are included: S1: providing a silicon substrate, prepares anode layer on the silicon substrate；S2: oled layer, cathode layer and protective layer are successively deposited on the silicon substrate and anode layer；S3: cavity is formed in the cathode layer and protective layer using yellow light technique and etching technics；S4: using the oled layer of the lower exposure in Bosch etching technics etching cavity, and the side wall of oled layer after etching forms protective film；S5: forming thin-film encapsulation layer, and the thin-film encapsulation layer covers the protective layer and the silicon substrate.The present invention utilizes yellow light technique and Bosch etching technics, prevents oled layer from being invaded by steam and oxygen, extends the service life of silicon substrate micro display screen.
Description
Technical field
The present invention relates to OLED display manufacturing fields more particularly to a kind of silicon substrate micro display screen and preparation method thereof.
Background technique
OLED (Organic Light-Emitting Diode, Organic Light Emitting Diode) display and CTR (Cathode
Ray Tube, cathode-ray tube) display, TFT-LCD (Thin Film Transistor-Liquid Crystal
Display, Thin Film Transistor-LCD) compared to lighter and thinner design, broader visual perspective, faster
Response speed and lower power consumption the features such as, therefore OLED display is gradually as next-generation display equipment and by people
Concern.
Current OLED display screen body mostly uses greatly the different OLED materials of vapor deposition to realize that OLED is graphical, and this method is in picture
Plain density is that there is no problem when being lower than 700ppi.But when pixel density is greater than 800ppi, existing manufacturing technology will be into
Enter physics bottleneck, there is a problem of the graphical difficulty of high pixel density.
In addition, the organic material that OLED is used is especially sensitive to water oxygen, it is very easy to occur with the steam penetrated anti-
It answers, influences the injection of charge, the steam and oxygen penetrated can also be chemically reacted with organic material, these reactions are to draw
Play the principal element of the decline of OLED device performance, the OLED device lost of life.Therefore OLED device needs stringent encapsulating material
To protect them from the erosion of water and oxygen.
In view of the above problems, it is necessary to a kind of new silicon substrate micro display screen and preparation method thereof is provided, to solve above-mentioned ask
Topic.
Summary of the invention
The purpose of the present invention is to provide a kind of silicon substrate micro display screen preparation method, the silicon substrate micro display screen preparation method benefits
With yellow light technique and Bosch etching technics, prevent oled layer from being invaded by steam and oxygen, extend silicon substrate micro display screen uses the longevity
Life.
To achieve the above object, the present invention provides a kind of silicon substrate micro display screen preparation methods comprising following steps:
S1: a silicon substrate is provided, prepares anode layer on the silicon substrate；
S2: oled layer, cathode layer and protective layer are successively deposited on the silicon substrate and anode layer；
S3: cavity is formed in the cathode layer and protective layer using yellow light technique and etching technics；
S4: the oled layer of the lower exposure in cavity, and the side wall shape of oled layer after etching are etched using Bosch etching technics
At protective film；
S5: forming thin-film encapsulation layer, and the thin-film encapsulation layer covers the protective layer and the silicon substrate.
Technical solution as a further improvement of that present invention, the step S1 specifically comprise the following steps:
S11: a silicon substrate is provided, several regularly arranged via holes are prepared on the silicon substrate；
S12: self-registered technology is used, anode layer is deposited on the silicon substrate, the anode layer includes and the via hole
One-to-one anode unit.
Technical solution as a further improvement of that present invention, the etching technics and step S4 in the step S3 are in vacuum ring
It is carried out under border.
The technological temperature of technical solution as a further improvement of that present invention, the yellow light technique is lower than 90 DEG C.
Technical solution as a further improvement of that present invention, the etching technics in the step S3 are reactive ion etching work
Skill.
Technical solution as a further improvement of that present invention, the protective film in the step S4 are fluorocarbons high molecular polymerization
Object.
Technical solution as a further improvement of that present invention, the width of the anode unit are 5 microns.
Technical solution as a further improvement of that present invention, the oled layer include organic luminous layer, be located at anode layer with
Hole injection layer and hole transmission layer between organic luminous layer and the electronics note between cathode layer and organic luminous layer
Enter layer and electron transfer layer.
The object of the invention is also to provide a kind of silicon substrate micro display screens.
To achieve the above object, the present invention provides a kind of silicon substrate micro display screens, including silicon substrate, the anode set gradually
Layer, oled layer, cathode layer, protective layer and the thin-film encapsulation layer that the protective layer and the silicon substrate is completely covered, feature exist
In the side wall of the oled layer is equipped with protective film.
Technical solution as a further improvement of that present invention, the protective film are fluorocarbons high molecular polymer.
The beneficial effects of the present invention are: silicon substrate micro display screen preparation method of the invention utilizes yellow light technique and Bosch work
Skill prevents oled layer from being invaded by steam and oxygen, extends the service life of silicon substrate micro display screen.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of silicon substrate micro display screen of the present invention.
Fig. 2 is the flow diagram of silicon substrate micro display screen preparation method of the present invention.
Fig. 3 is the structural schematic diagram of the semi-finished product formed in Fig. 2 step S1.
Fig. 4 is the structural schematic diagram of the semi-finished product formed in step S2 of the present invention.
Fig. 5 is the structural schematic diagram of the semi-finished product formed in step S31 of the present invention.
Fig. 6 is the structural schematic diagram of the semi-finished product formed in step S3 of the present invention.
Fig. 7 is the structural schematic diagram of the semi-finished product formed in step S4 of the present invention.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, right in the following with reference to the drawings and specific embodiments
The present invention is described in detail.
Refering to Figure 1, the present invention provides a kind of silicon substrate micro display screens comprising: the silicon substrate 10 that sets gradually,
Anode layer 20, oled layer 30, cathode layer 40, protective layer 50 and the thin-film package that the protective layer and the silicon substrate is completely covered
The side wall of layer 60, oled layer is equipped with protective film 31.
Specifically, silicon substrate 10 is equipped with several regularly arranged via holes 11, and anode layer 20 includes several anode units
21, several anode units 21 are arranged in anode layer 20 in pixel graphics, and anode unit 21 and via hole 11 correspond, anode list
Member 21 is indium oxide tin film (ITO).In the present embodiment, the width of anode unit 21 is 5 microns, but should not be as limit.
Oled layer 30 includes organic luminous layer, the hole injection layer between anode layer 20 and organic luminous layer and hole
Transport layer and electron injecting layer and electron transfer layer between cathode layer and organic luminous layer.Further, hole passes
Defeated layer is between organic luminous layer and hole injection layer；Electron transfer layer is between organic luminous layer and electron injecting layer.
Thin-film encapsulation layer 60 can be and stack inorganic thin film on organic film, inorganic thin film or organic film.Film
Protective layer 50 and silicon substrate 10 is completely covered in encapsulated layer 60, to encapsulate the silicon substrate micro display screen for completing etching.
It please refers to shown in Fig. 1 to Fig. 7, silicon substrate micro display screen of the invention is made by the steps:
S1: a silicon substrate 10 is provided, anode layer 20 is prepared on silicon substrate 10；
S2: oled layer 30, cathode layer 40 and protective layer 50 are successively deposited on silicon substrate 10 and anode layer 20；
S3: cavity is formed in the cathode layer 40 and protective layer 50 using yellow light technique and etching technics；
S4: the oled layer 30 of the lower exposure in cavity, and the side of oled layer 30 after etching are etched using Bosch etching technics
Wall forms protective film 31；
S5: thin-film encapsulation layer 60,60 protective mulch 50 of thin-film encapsulation layer and silicon substrate 10 are formed.
Wherein, step S1 is specifically included:
S11: a silicon substrate 10 is provided, several regularly arranged via holes 11 are prepared on silicon substrate 10；
S12: using self-registered technology, and anode layer 20 is deposited on silicon substrate 10, and anode layer 20 includes and the via hole 11
One-to-one anode unit 21.
Step S3 is specifically included:
Step S31: photoresist 70 is coated on protective layer 50 and is solidified；
Step S32: covering lithography mask version above photoresist 70 after hardening, and photoresist 70 is exposed and is shown
Shadow exposes the region corresponding with cavity to be formed of protective layer 50；
Step S33: utilizing reactive ion etching process, by the protective layer 50 being exposed and with the protection that is exposed
The corresponding cathode layer 40 of layer 50 removes, and forms cavity；
Step S34: removal remains in the photoresist 70 on protective layer 50.
Wherein, in step S31, photoresist 70 can select positive photoresist or negative photoresist according to actual needs, not limit herein
System.
Preferably, it uses in step S32 with SiO2For the lay photoetching mask plate of material.
Etching technics and step S4 in step S3 carry out under vacuum conditions, to prevent the oled layer in etching process from connecing
Touch steam and oxygen.In addition, it should be noted that the photoresist of low-temperature setting is selected in step S3, so set, making Huang
The technological temperature of light technology is lower than 90 DEG C.
In step S4, Bosch etching technics uses etching gas to perform etching exposed oled layer 30 first, then adopts
It is passivated with side wall of the passivation gas to oled layer 30.Etching converts a cycle with every 5~10s is passivated, by alternately turning
It changes etching gas and passivation gas realizes etching and side wall passivation.Wherein, etching gas SF6, passivation gas C4F8。C4F8In
The side wall of oled layer 30 forms protective film 31, and protective film 31 is fluorocarbons high molecular polymer (CFx), CFxIt is deposited on oled layer 30
Sidewall surfaces, the fluorine ion in etching gas can be prevented to react with the further of oled layer 30.
In conclusion the present invention selects yellow light technique, etching technics to realize that high-resolution silicon substrate micro display screen is graphical,
The existing patterned physics limit of vapor deposition is broken through, realizes the display of high pixel density；Using Bosch etching technics, etched
Side wall protection is carried out to oled layer in journey, prevents oled layer from being invaded by steam and oxygen, extend silicon substrate micro display screen uses the longevity
Life.
Above embodiments are merely to illustrate the present invention and not limit the technical scheme described by the invention, to this specification
Understanding should based on person of ordinary skill in the field, although this specification referring to the above embodiments to the present invention
Detailed description is had been carried out, it will be appreciated, however, by one skilled in the art that person of ordinary skill in the field still may be used
To modify or equivalently replace the present invention, and all do not depart from the technical solution of the spirit and scope of the present invention and its change
Into should all cover in scope of the presently claimed invention.
Claims (10)
1. a kind of silicon substrate micro display screen preparation method, which comprises the following steps:
S1: a silicon substrate is provided, prepares anode layer on the silicon substrate；
S2: oled layer, cathode layer and protective layer are successively deposited on the silicon substrate and anode layer；
S3: cavity is formed in the cathode layer and protective layer using yellow light technique and etching technics；
S4: the oled layer of the lower exposure in the cavity, and the side wall shape of oled layer after etching are etched using Bosch etching technics
At protective film；
S5: forming thin-film encapsulation layer, and the thin-film encapsulation layer covers the protective layer and the silicon substrate.
2. silicon substrate micro display screen preparation method according to claim 1, which is characterized in that the step S1 specifically include as
Lower step:
S11: a silicon substrate is provided, several regularly arranged via holes are prepared on the silicon substrate；
S12: using self-registered technology, be deposited anode layer on the silicon substrate, the anode layer include with the via hole one by one
Corresponding anode unit.
3. silicon substrate micro display screen preparation method according to claim 1, which is characterized in that the etching work in the step S3
Skill and step S4 are carried out under vacuum conditions.
4. silicon substrate micro display screen preparation method according to claim 1, which is characterized in that the process warm of the yellow light technique
Degree is lower than 90 DEG C.
5. silicon substrate micro display screen preparation method according to claim 1, which is characterized in that the etching work in the step S3
Skill is reactive ion etching process.
6. silicon substrate micro display screen preparation method according to claim 1, which is characterized in that the protective film in the step S4
For fluorocarbons high molecular polymer.
7. silicon substrate micro display screen preparation method according to claim 2, which is characterized in that the width of the anode unit is
5 microns.
8. silicon substrate micro display screen preparation method according to claim 1, which is characterized in that the oled layer includes organic hair
Photosphere, the hole injection layer between anode layer and organic luminous layer and hole transmission layer and it is located at cathode layer and organic hair
Electron injecting layer and electron transfer layer between photosphere.
9. a kind of silicon substrate micro display screen, including silicon substrate, anode layer, oled layer, cathode layer, the protective layer and completely set gradually
Cover the thin-film encapsulation layer of the protective layer and the silicon substrate, which is characterized in that the side wall of the oled layer is equipped with protective film.
10. silicon substrate micro display screen according to claim 9, which is characterized in that the protective film is fluorocarbons polyphosphazene polymer
Close object.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910724844.3A CN110429122B (en) | 2019-08-07 | Silicon-based micro display screen and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910724844.3A CN110429122B (en) | 2019-08-07 | Silicon-based micro display screen and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110429122A true CN110429122A (en) | 2019-11-08 |
| CN110429122B CN110429122B (en) | 2024-05-24 |
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