CN110380693A - Low pressure broadband medium_power radio frequency amplifier based on HBT technique - Google Patents
Low pressure broadband medium_power radio frequency amplifier based on HBT technique Download PDFInfo
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- CN110380693A CN110380693A CN201910674005.5A CN201910674005A CN110380693A CN 110380693 A CN110380693 A CN 110380693A CN 201910674005 A CN201910674005 A CN 201910674005A CN 110380693 A CN110380693 A CN 110380693A
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 230000007850 degeneration Effects 0.000 claims abstract description 19
- 230000006835 compression Effects 0.000 claims abstract description 18
- 238000007906 compression Methods 0.000 claims abstract description 18
- 239000003990 capacitor Substances 0.000 claims description 17
- 230000005611 electricity Effects 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 230000003321 amplification Effects 0.000 claims description 4
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers without distortion of the input signal
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
- H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a kind of low pressure broadband medium_power radio frequency amplifier based on HBT technique, including amplifying circuit, resistive degeneration network, direct current temperature compensation network and choke network；The amplifying circuit amplifies for signal；The resistive degeneration network and for amplifying circuit provides direct current biasing for realizing power gain adjustment, the impedance matching of amplifying circuit；The direct current temperature compensation network is used for stabilized power supply electric current, output 1dB compression point under high/low temperature；The choke network is for the interference signal of power supply to be isolated with output end useful signal.The present invention passes through setting direct current temperature compensation network, on circuit power gain, noise coefficient, input standing-wave ratio, output standing-wave ratio without influence in the case where, it reduces source current and output 1dB compression point under the middle power radio-frequency amplifiers low pressure of HBT technique realization and temperature stability is improved to the susceptibility of temperature.
Description
Technical field
The present invention relates to monolithic radio frequency/microwave integrated circuit field, in particular to a kind of low pressure broadband based on HBT technique
Middle power radio-frequency amplifiers.
Background technique
Radio frequency amplifier is the key components in wireless transceiver system, is widely used in wireless communication, radio and television, point
The fields such as point to-point communication.Its function is to amplify radio frequency small-signal.Radio frequency amplifier mainly include low-noise amplifier,
Intermediate power amplifier, power amplifier etc., wherein low-noise amplifier is mainly used in the first order of receiver, noise coefficient
It plays a decisive role to the noise coefficient of system；Intermediate power amplifier is mainly used in the intergrade of Receiver And Transmitter, realizes
To the gain adjustment of signal link；Power amplifier mainly applies the final stage of transmitter, and transmission power, efficiency determine transmitting
The overall performance index of machine.In 5V and following power supply power supply, there are high/low temperatures based on the intermediate power amplifier that HBT is realized for tradition
Lower source current and output 1dB compression point fluctuation are big, even are easy to burn circuit at high temperature, therefore middle power under normal conditions
Amplifier needs 8V or more power supply power supply, and the broadband medium_power based on the GaAs PHEMT technique 5V realized and following power supply is penetrated
Audio amplifier there are volumes it is big, at high cost the problems such as.
Modern wireless transceiver system is required to low pressure, small size, broadband, high linearity etc. to intermediate power amplifier, in this way
The power consumption of system totality can be reduced and obtain big Dynamic Range, therefore, design is invented a kind of based on the realization of HBT technique
Low pressure broadband medium_power radio frequency amplifier have very important engineering value.
Summary of the invention
The technical problem to be solved in the present invention is to provide one kind to meet low voltage power supply based on HBT technique, and can realize height
The low pressure broadband medium_power radio frequency amplifier based on HBT technique that the linearity, wide working band are applied, to reduce in HBT
The power supply power supply of power radio-frequency amplifiers, output 1dB compression point variation with temperature, improve temperature stability, solve tradition HBT
Middle power radio-frequency amplifiers in low voltage application -55 DEG C~125 DEG C of temperature range interior power electric currents and output 1dB compression point become
Change big problem.
Technical scheme is as follows:
A kind of low pressure broadband medium_power radio frequency amplifier based on HBT technique, including amplifying circuit, resistive degeneration net
Network, direct current temperature compensation network, choke network, input port IN and output port OUT；The input terminal of the amplifying circuit passes through
Direct current temperature compensation network is connected with input port IN, the amplifying circuit for receive the signal from input port IN and by its
Amplification, the output end of the amplifying circuit are connected with output port OUT, and the output end of the amplifying circuit is also connected with choke network；
The resistive degeneration network is connected with amplifying circuit, for realizing power gain adjustment, the impedance matching of amplifying circuit, and
Direct current biasing is provided for amplifying circuit, the resistive degeneration network is also connected with direct current temperature compensation network；The direct current temperature
It spends compensation network and is used for stabilized power supply electric current, output 1dB compression point under high/low temperature；The choke network is used to connect power supply,
And the useful signal of the interference signal and amplification circuit output end to power supply is isolated.
Further, the amplifying circuit include triode V1 and triode V2, the triode V1 base stage pass through it is straight
Stream temperature compensation network is connected with input port IN, and the emitter of the triode V1 is connected with the base stage of triode V2, described
The emitter of triode V1 is also connected with resistive degeneration network；The collector of the triode V1 and the collector of triode V2
It is connected, the collector of the triode V1 is also connected with resistive degeneration network, the collector and chokes net of the triode V2
Network is connected, and the collector of the triode V2 is also connected with output port OUT, and the emitter and resistance of the triode V2 is negative anti-
Network is presented to be connected.
Further, the resistive degeneration network includes resistance R1, resistance R2, resistance R3 and resistance R4, the resistance
One end of R1 is connected with input port IN, and the other end of the resistance R1 is connected with output port OUT；One end of the resistance R2
It is connected with input port IN, the other end ground connection of the resistance R2；One end of the resistance R3 is connect with the base stage of triode V2,
The other end of the resistance R3 is grounded；One end of the resistance R4 is connect with the emitter of triode V2, and the resistance R4's is another
One end ground connection.
Further, the direct current temperature compensation network includes resistance R5 and capacitor C1, one end of the resistance R5 with it is defeated
Inbound port IN connection, the other end of the resistance R5 are connect with the base stage of triode V1, and the capacitor C1 is in parallel with resistance R5.
Further, the choke network includes one end and the triode V2 of inductance L1 and capacitor C2, the inductance L1
Collector be connected, the other end of the inductance L1 is connected with power supply, the other end of the inductance L1 also with capacitor C2 one
End is connected, the other end ground connection of the capacitor C2.
Further, the triode V1 and triode V2 is the bipolar transistor of same model, triode V1 and three
One of the model Si BJT of pole pipe V2, SiGe HBT, GaAs HBT and InP HBT.
The utility model has the advantages that the present invention increases resistance R5 between triode V1 base stage and resistance R1 and R2 node, reduce
Source current and output 1dB compression point promote the susceptibility of temperature under the middle power radio-frequency amplifiers low pressure that HBT technique is realized
Temperature stability；In the both ends resistance R5 flying capcitor C1, AC signal amplification, and resistance R5 and C1 pairs of capacitor can be realized
The power gain of circuit, input standing-wave ratio, exports standing-wave ratio without influence at noise coefficient；Source current of the present invention is in height
Under low temperature variation within 5mA, output 1dB compression point change within 2dBm under high/low temperature, the present invention realize based on HBT
The middle power radio-frequency amplifiers of technique have source current and output 1dB compression point variation under low supply voltage work, high/low temperature
The advantages that small, meets low-power consumption broadband high linearity application demand in 5V and following radio frequency system.
Detailed description of the invention
Fig. 1 is structural block diagram of the invention；
Fig. 2 is the circuit diagram of one embodiment of the invention；
Fig. 3 is electricity of conventional radio frequency amplifier architecture under the conditions of supply voltage is 5V, temperature range is -55~125 DEG C
Ource electric current variation diagram；
Fig. 4 is that conventional radio frequency amplifier architecture is defeated under the conditions of supply voltage is 5V, temperature range is -55~125 DEG C
1dB compression point variation diagram out；
Fig. 5 is source current variation diagram of present invention under the conditions of supply voltage is 5V, temperature range is -55~125 DEG C；
Fig. 6 is that output 1dB compression point of present invention under the conditions of supply voltage is 5V, temperature range is -55~125 DEG C becomes
Change figure.
Specific embodiment
Technical solution in the embodiment of the present invention is described further with reference to the accompanying drawing.
As shown in Figure 1, being one embodiment of the present of invention, a kind of low pressure broadband medium_power radio frequency based on HBT technique is put
Big device, including amplifying circuit 1, resistive degeneration network 2, direct current temperature compensation network 3, choke network 4, input port IN and defeated
Exit port OUT；The amplifying circuit 1 is used for for receiving the signal from input port IN and being amplified, and the resistance is negative
Feedback network 2 is for realizing power gain adjustment, the impedance matching of amplifying circuit 1, and to provide direct current inclined for amplifying circuit 1
It sets；The direct current temperature compensation network 3 is used for stabilized power supply electric current, output 1dB compression point under high/low temperature；The choke network
4 for connecting power supply, and the interference signal of power supply is isolated with the useful signal of 1 output end of amplifying circuit.
The amplifying circuit 1 includes that triode V1 and triode V2, the base stage of the triode V1 are mended by direct current temperature
It repays network 3 to be connected with input port IN, the emitter of the triode V1 is connected with the base stage of triode V2, the triode V1
Emitter be also connected with resistive degeneration network 2；The collector of the triode V1 is connected with the collector of triode V2, institute
The collector for stating triode V1 is also connected with resistive degeneration network 2, collector and 4 phase of choke network of the triode V2
Even, the collector of the triode V2 is also connected with output port OUT, the emitter and resistive degeneration net of the triode V2
Network 2 is connected.
The resistive degeneration network 2 includes resistance R1, resistance R2, resistance R3 and resistance R4, one end of the resistance R1
It is connected with input port IN, the other end of the resistance R1 is connected with output port OUT；One end of the resistance R2 and input terminal
Mouth IN is connected, the other end ground connection of the resistance R2；One end of the resistance R3 is connect with the base stage of triode V2, the resistance
The other end of R3 is grounded；One end of the resistance R4 is connect with the emitter of triode V2, the other end ground connection of the resistance R4.
The direct current temperature compensation network 3 includes one end and the input port IN of resistance R5 and capacitor C1, the resistance R5
Connection, the other end of the resistance R5 are connect with the base stage of triode V1, and the capacitor C1 is in parallel with resistance R5.
The choke network 4 includes one end and the collector phase of triode V2 of inductance L1 and capacitor C2, the inductance L1
Even, the other end of the inductance L1 is connected with power supply, and the other end of the inductance L1 is also connected with one end of capacitor C2, institute
State the other end ground connection of capacitor C2.
The triode V1 and triode V2 is the bipolar transistor of same model, the type of triode V1 and triode V2
Number be one of Si BJT, SiGe HBT, GaAs HBT and InP HBT.
Working principle of the present invention is as follows:
As shown in Figure 1, triode V1, triode V2 form amplifying circuit, resistance R1 and R2 divide supply voltage,
Direct current biasing is provided by resistance R5 for triode V1 and triode V2.Due to R1 and R2 constant rate, power supply passes through two electricity
The voltage exported after resistance partial pressure will not change with temperature；When the temperature increases, due to the BE of triode V1 and triode V2
Knot pressure drop variation coefficient is negative temperature coefficient, and BE knot pressure drop decline with temperature raising of triode V1 and triode V2 make electricity
The voltage hindered on R3 and resistance R4 increases, and the electric current on resistance R3 and resistance R4 also becomes larger therewith, at this point, triode V1 and three poles
The collector-emitter current and base current of pipe V2 can all become larger；The base current of triode V1 is become by resistance R5
Conference increases the voltage on resistance R5, so that the base voltage of triode V1 be made to decline, while can also reduce resistance R3 and electricity
Hinder R4 on voltage, so that the electric current on resistance R3 and resistance R4 is also become smaller, thus compensation with temperature rise caused by triode
Curent change on V1 and the variation of triode V2 emitter voltage and resistance R3 and resistance R4, makes to flow through resistance R3 and resistance R4
Electric current with temperature rise variation it is smaller；The source current of amplifier flows mainly through resistance R3 and resistance R4, so amplifier
Source current also changes smaller with temperature rising.
Conversely, when the temperature decreases, the BE knot pressure drop of triode V1 and triode V2 are reduced with temperature and increased, make resistance
Voltage on R3 and resistance R4 reduces, and the electric current on resistance R3 and resistance R4 also becomes smaller therewith, at this point, triode V1 and triode
The collector-emitter current and base current of V2 can all become smaller；Reduce the voltage on resistance R5, to make triode V1
Base voltage increase, while the voltage on resistance R3 and resistance R4 can also increased, make the electric current on resistance R3 and resistance R4
Also become larger, thus compensation with temperature reduce caused by triode V1 and triode V2 emitter voltage variation and resistance R3 and
Curent change on resistance R4 keeps the electric current for flowing through resistance R3 and resistance R4 smaller with temperature reduction variation；That is the electricity of amplifier
Ource electric current also changes smaller with temperature reduction.
From above procedure as can be seen that can constitute direct current negative-feedback circuit by resistance R5, compensation passes through this process
Source current variation with temperature can be reduced；In addition, output 1dB compression point and source current are proportional, when power supply electricity
When stream varies with temperature small, output 1dB compression point can also vary with temperature smaller；Therefore, the present invention can reduce power supply
Electric current varies with temperature and stablizes output 1dB compression point.
In order to realize that AC signal amplifies, capacitor C1 is bridged at the both ends resistance R5, to avoid AC signal by electricity
It causes to be lost when hindering R5, resistance R5 and C1 is to the power gain of circuit, noise coefficient, input standing-wave ratio, output standing-wave ratio
Without influence.
Source current of the present invention changes within 4mA under high/low temperature, and source current varies with temperature curve such as Fig. 4 institute
Show；Output 1dB compression point changes within 2dBm under high/low temperature, and output 1dB compression point varies with temperature curve such as Fig. 5 institute
Show.
The undescribed part of the invention is identical with the prior art, and this will not be repeated here.
The above is only embodiments of the present invention, are not intended to limit the scope of the invention, all to utilize the present invention
Equivalent structure made by specification and accompanying drawing content is directly or indirectly used in other related technical areas, similarly at this
Within the scope of patent protection of invention.
Claims (6)
1. a kind of low pressure broadband medium_power radio frequency amplifier based on HBT technique, it is characterised in that: including amplifying circuit, resistance
Negative feedback network, direct current temperature compensation network, choke network, input port IN and output port OUT；The amplifying circuit it is defeated
Enter end to be connected by direct current temperature compensation network with input port IN, the amplifying circuit is for receiving the letter from input port IN
Number and amplified, the output end of the amplifying circuit is connected with output port OUT, the output end of the amplifying circuit also with chokes net
Network is connected；The resistive degeneration network is connected with amplifying circuit, for realizing power gain adjustment, the impedance of amplifying circuit
Match, and provide direct current biasing for amplifying circuit, the resistive degeneration network is also connected with direct current temperature compensation network；It is described
Direct current temperature compensation network is used for stabilized power supply electric current, output 1dB compression point under high/low temperature；The choke network is for connecting
Power supply, and the useful signal of the interference signal and amplification circuit output end to power supply is isolated.
2. the low pressure broadband medium_power radio frequency amplifier according to claim 1 based on HBT technique, it is characterised in that: institute
It states the base stage that amplifying circuit includes triode V1 and triode V2, the triode V1 and passes through direct current temperature compensation network and input
Port IN be connected, the emitter of the triode V1 is connected with the base stage of triode V2, the emitter of the triode V1 also with
Resistive degeneration network is connected；The collector of the triode V1 is connected with the collector of triode V2, the triode V1's
Collector is also connected with resistive degeneration network, and the collector of the triode V2 is connected with choke network, the triode V2
Collector be also connected with output port OUT, the emitter of the triode V2 is connected with resistive degeneration network.
3. the low pressure broadband medium_power radio frequency amplifier according to claim 2 based on HBT technique, it is characterised in that: institute
State one end and input port IN that resistive degeneration network includes resistance R1, resistance R2, resistance R3 and resistance R4, the resistance R1
It is connected, the other end of the resistance R1 is connected with output port OUT；One end of the resistance R2 is connected with input port IN, institute
State the other end ground connection of resistance R2；One end of the resistance R3 is connect with the base stage of triode V2, the other end of the resistance R3
Ground connection；One end of the resistance R4 is connect with the emitter of triode V2, the other end ground connection of the resistance R4.
4. the low pressure broadband medium_power radio frequency amplifier according to claim 2 based on HBT technique, it is characterised in that: institute
Stating direct current temperature compensation network includes resistance R5 and capacitor C1, and one end of the resistance R5 is connect with input port IN, the electricity
The other end of resistance R5 is connect with the base stage of triode V1, and the capacitor C1 is in parallel with resistance R5.
5. the low pressure broadband medium_power radio frequency amplifier according to claim 2 based on HBT technique, it is characterised in that: institute
Stating choke network includes inductance L1 and capacitor C2, and one end of the inductance L1 is connected with the collector of triode V2, the inductance
The other end of L1 is connected with power supply, and the other end of the inductance L1 is also connected with one end of capacitor C2, the capacitor C2's
Other end ground connection.
6. the low pressure broadband medium_power radio frequency amplifier according to claim 2 based on HBT technique, it is characterised in that: institute
State the bipolar transistor that triode V1 and triode V2 is same model, the model SiBJT of triode V1 and triode V2,
One of SiGe HBT, GaAs HBT and InP HBT.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910674005.5A CN110380693A (en) | 2019-07-25 | 2019-07-25 | Low pressure broadband medium_power radio frequency amplifier based on HBT technique |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910674005.5A CN110380693A (en) | 2019-07-25 | 2019-07-25 | Low pressure broadband medium_power radio frequency amplifier based on HBT technique |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112653402A (en) * | 2020-12-21 | 2021-04-13 | 中国电子科技集团公司第二十四研究所 | Low-voltage medium-power radio frequency amplifier based on silicon-based BJT (bipolar junction transistor) process |
| CN113346848A (en) * | 2021-06-18 | 2021-09-03 | 中国电子科技集团公司第二十四研究所 | HBT (heterojunction bipolar transistor) process-based high-three-order intermodulation point medium-power radio-frequency amplification circuit |
| CN113655840A (en) * | 2021-07-29 | 2021-11-16 | 中国电子科技集团公司第二十九研究所 | Temperature coefficient adjustable amplifier circuit and voltage generation method |
| CN113809991A (en) * | 2020-06-17 | 2021-12-17 | 立积电子股份有限公司 | Temperature compensation circuit for power amplifier |
| CN113872533A (en) * | 2021-12-02 | 2021-12-31 | 华南理工大学 | Power amplifier and transmitter |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113346848A (en) * | 2021-06-18 | 2021-09-03 | 中国电子科技集团公司第二十四研究所 | HBT (heterojunction bipolar transistor) process-based high-three-order intermodulation point medium-power radio-frequency amplification circuit |
| CN113655840A (en) * | 2021-07-29 | 2021-11-16 | 中国电子科技集团公司第二十九研究所 | Temperature coefficient adjustable amplifier circuit and voltage generation method |
| CN113655840B (en) * | 2021-07-29 | 2023-08-29 | 中国电子科技集团公司第二十九研究所 | Amplifier circuit with adjustable temperature coefficient and voltage generation method |
| CN113872533A (en) * | 2021-12-02 | 2021-12-31 | 华南理工大学 | Power amplifier and transmitter |
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Application publication date: 20191025 |