CN110361445A - A kind of highly selective CMUTs gas sensor of multi-parameter and its use and preparation method - Google Patents

A kind of highly selective CMUTs gas sensor of multi-parameter and its use and preparation method Download PDF

Info

Publication number
CN110361445A
CN110361445A CN201910696445.0A CN201910696445A CN110361445A CN 110361445 A CN110361445 A CN 110361445A CN 201910696445 A CN201910696445 A CN 201910696445A CN 110361445 A CN110361445 A CN 110361445A
Authority
CN
China
Prior art keywords
thin film
soi
cmuts
sensitive thin
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201910696445.0A
Other languages
Chinese (zh)
Other versions
CN110361445B (en
Inventor
李支康
赵立波
赵一鹤
李�杰
徐廷中
郭帅帅
刘子晨
罗国希
李磊
王书蓓
蒋庄德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xian Jiaotong University
Suzhou Academy of Xian Jiaotong University
Original Assignee
Xian Jiaotong University
Suzhou Academy of Xian Jiaotong University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xian Jiaotong University, Suzhou Academy of Xian Jiaotong University filed Critical Xian Jiaotong University
Priority to CN201910696445.0A priority Critical patent/CN110361445B/en
Publication of CN110361445A publication Critical patent/CN110361445A/en
Application granted granted Critical
Publication of CN110361445B publication Critical patent/CN110361445B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/128—Microapparatus
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/02—Analysing fluids
    • G01N29/022—Fluid sensors based on microsensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/02—Analysing fluids
    • G01N29/036—Analysing fluids by measuring frequency or resonance of acoustic waves
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/01—Indexing codes associated with the measuring variable
    • G01N2291/014—Resonance or resonant frequency
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/02—Indexing codes associated with the analysed material
    • G01N2291/021—Gases

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Acoustics & Sound (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

The invention discloses a kind of highly selective CMUTs gas sensor of multi-parameter and its use and preparation method, the present invention uses SnO2、ZnO、Fe2O3、WO3Equal metal oxide semiconductors, it is used as to CMUTs top electrode and sensitive identification material simultaneously, using the characteristic of film quality and top electrode resistance variations is caused after its adsorbed gas simultaneously, realize that physics, chemical property is close or the highly selective sensitivity of similar gases molecule.The variation of film quality can cause the variation of CMUT resonance frequency；The variation for powering on electrode resistance can cause the variation of alternating voltage amplitude between CMUT upper/lower electrode, and then cause the variation of CMUT vibration of thin membrane amplitude, pass through the highly selective detection for changing achievable gas molecule of both output parameters of resonance frequency and vibration of thin membrane displacement amplitude.Further, since conductor oxidate sensitive material has a reusability under temperature adjusting, therefore CMUT gas sensor of the present invention is in addition to also having good repeated with highly selective outer.

Description

A kind of highly selective CMUTs gas sensor of multi-parameter and its use and preparation method
Technical field
The present invention relates to MEMS capacitive micromachined ultrasonic transducer technology and conductor oxidate sensitive materials, especially relate to And a kind of highly selective CMUTs gas sensor of multi-parameter and its use and preparation method.
Background technique
Resonant mode MEMS gas sensor utilizes the sensitive material coated in its resonant element surface to adsorb tested gas Cause the variation of resonant element quality and then caused resonance frequency afterwards to realize the detection of gas.Resonant mode MEMS gas sensing Device has low small in size, high sensitivity, the quality detection limit, small power consumption and compatible with MEMS technology, achievable mass system The advantages such as make.Capacitance type micromachined ultrasonic transducer (Capacitive Micromachined Ultrasonic Transducers, CMUTs) original intention of development be for ultrasound medical imaging and treatment, since its film quality is small, resonance frequency The features such as height, vibration film unilateral side is acted on (other side is vacuum) by air damping, quality factor is high, it is accordingly used in resonance Highly sensitive, the low detectable limit measurement of gas can be realized when device.In addition, relative to (Quartz Crystal is based on Microbalance, QCM) gas sensor, CMUT operating temperature range is wide (up to 500 DEG C), influenced by ambient temperature small； Relative to the gas sensor based on cantilever beam, CMUT resonance film periphery fixed is firm in structure, can be used for gas in adverse circumstances Physical examination is surveyed.Therefore, CMUTs is used for resonator, has outstanding properties excellent when realizing highly sensitive, low detectable limit gas detection Gesture.Currently, Stanford Univ USA professor B.T.Khuri-Yakub etc. detects methyl as biochemical sensor using CMUTs Dimethyl phosphonate (Dimethyl methylphosphonate, DMMP), the quality limit of detection is 0.162 × 10-16G, volume Sensitivity is 37.38ppb/Hz.Kao Nasi Polytechnics D.Barauskas et al. will be after CMUT functionalization using the method for spin coating For CO2Measurement, detection sensitivity is respectively 3.8ppm/Hz and 0.25ppm/Hz.Verified CMUTs is used for gas for these researchs The feasibility and performance advantage that physical examination is surveyed.
However, the sensitive material and upper electrode layer of existing CMUTs gas sensor use independent design, sensitive material is only It is only used for selective absorption and is tested gas, and top electrode vibrates film for loading static excitation.Sensitive thin film absorption Only film quality is caused to change afterwards, and then this single parameter of resonance frequency is caused to generate variation, when there is physically or chemically property In the presence of matter is similar or similar gas molecule, then sensor can not be distinguished effectively, generate wrong report.Therefore, it is based on current structure The highly selective detection of similar or close tested gas molecule is difficult to realize with the CMUTs gas sensor of working principle.
Summary of the invention
To solve above-mentioned technical problem, the present invention proposes a kind of highly selective CMUTs gas sensor of multi-parameter and its makes With with preparation method.
The technical solution adopted by the invention is as follows:
A kind of overall structure of the highly selective CMUTs gas sensor of multi-parameter of the present invention successively includes sensitivity under upper Film, electric insulating film, cavity, diffraction grating and transparent substrates；Wherein sensitive thin film also has other than with vapor sensitivity There is the changed performance of resistance after acting on gas, sensitive thin film is used as top electrode simultaneously；Diffraction grating uses conduction material Material, while being used as lower electrode；Transparent substrates have light transmission features；Sensitive thin film and electric insulating film collectively form vibration film.
The sensitive thin film is the metal oxide thin films with vapor sensitivity, sensitive thin film and tested gas The quality of sensitive thin film and resistance can be caused to change simultaneously after effect.
The sensitive thin film uses SnO2Film, ZnO film, Fe2O3Film or WO3Film these with vapor sensitivity Metal oxide thin films, sensitive thin film have vapor sensitivity, sensitive thin film and gas effect after in addition to causing wave Outside quality changes, while also resistance being caused to change.
The top electrode and sensitive thin film are same film, and sensitive thin film only covers corresponding region right above cavity, or Person covers entire CMUTs array region.It can consider to be designed as sensitive thin film to reduce the graphical electricity of thermal stress with emphasis Pole structure.
The electric insulating film is SiO2Film, SiC film or Si3N4These insulating materials of film, electric insulating film are used for Realize being electrically insulated between top electrode and lower electrode.
The cavity is vacuum chamber, and the cross-sectional shape of cavity is round, rectangular or regular hexagon, the height of cavity according to Operating voltage requirements and process conditions are designed；It is pillar around cavity, the thickness of pillar and the height of cavity are identical.
The diffraction grating is located at cavity inside, between each grating of diffraction grating and diffraction grating and surrounding structure it Between electrical connection is set, diffraction grating realizes the optical interference of vibration film for the light that be reflected by vibration film to be carried out diffraction Displacement detecting, the material of diffraction grating is low-resistance material, while being used as lower electrode.
The surrounding structure of the diffraction grating is to be electrically connected with the lower electrode of the same material of diffraction grating, equal thickness, lower electrode The shape of electrical connection respectively corresponds identical, lower electrode electrical connection use with the cross-sectional shape of width dimensions and pillar with width dimensions It is electrically connected in external power supply realization.The transparent substrates use material for the saturating of BF 33 or Pyrex7740 these transparent materials Bright substrate, transparent substrates are for realizing membrane displacement optical interferometry.
Material selected by any two kinds in pillar, diffraction grating and transparent substrates around the electric insulating film, cavity The thermal expansion coefficient of material should be not much different in 20%, and thermal expansion coefficient is closer better, to reduce in variation of ambient temperature Thermal stress influences sensor performance in the process.
The application method of the highly selective CMUTs gas sensor of multi-parameter, process include:
After tested gas and sensitive thin film interact, the quality and resistance of sensitive thin film change simultaneously；It is logical Cross the detection that can be realized tested gas to the detection of the resonance frequency and vibration displacement of vibration film both output parameters.
Sensitive thin film is the metal oxide thin films with vapor sensitivity, and sensitive thin film and tested gas act on After wave film quality and film resistor can be caused to change simultaneously；By adjusting the highly selective CMUTs gas of multi-parameter The temperature of body sensor realizes that the highly selective CMUTs gas sensor of the multi-parameter examines the multiplicating of tested gas It surveys.It can be adjusted by temperature when being used for gas sensitization due to conductor oxidate and obtain repeatability well, can passed through The operating temperature of CMUTs gas sensor, which is adjusted, realizes that CMUTs gas sensor detects the multiplicating of tested gas, mentions High duplication.
A kind of preparation method of the highly selective CMUTs gas sensor of multi-parameter, mainly comprises the steps that
(1) it takes a SOI piece as the first SOI piece, and separately takes a transparent glass chip (such as BF33 glass), to the first SOI Piece and transparent glass chip carry out standard cleaning, spare；
(2) under cryogenic using anode linkage method, the top layer silicon of the first SOI piece and transparent glass chip are subjected to sun Pole bonding；
(3) the 80% of the first SOI piece substrate silicon thickness is removed using chemical mechanical polishing method, then is removed with buffering etching liquid The base silicon of residue 20%, etching stopping is in the first SOI piece buried silicon dioxide layer surface；
(4) photoetching, graphical cavity shape, the first SOI piece buried silicon dioxide layer layer of wet etching remove in graphical window Silica, etching stopping forms the corbeling around cavity structure and cavity in the first SOI piece top layer silicon face；Separately It takes a SOI piece as the 2nd SOI piece, cleans, is spare；
(5) photoetching, graphical diffraction grating shape, the first SOI piece top layer silicon of wet etching, etching stopping is in transparent glass Upper wafer surface forms diffraction grating；The 2nd SOI piece top layer silicon of simultaneous oxidation, in the 2nd SOI piece top layer silicon Surface Creation dioxy SiClx layer；
(6) buried silicon dioxide layer (the buried layer titanium dioxide of reservation for being retained the first SOI on piece using watery fusion bonding method Pillar of the silicon as CMUTs gas sensor) with the silicon dioxide layer of the 2nd SOI piece top layer silicon upper surface vacuum bonding is carried out, Cavity vacuum is sealed at this time；
(7) the 80% of the 2nd SOI piece substrate silicon thickness is removed using the method for chemically mechanical polishing, then is gone using etching liquid Except the base silicon of residue 20%, expose the 2nd SOI piece buried silicon dioxide layer；Second is removed using the method for dry or wet etch SOI piece buried silicon dioxide layer layer exposes the 2nd SOI piece remaining top layer silicon after aoxidizing；
(8) the 2nd SOI piece remaining top layer silicon after aoxidizing is etched using buffering etching liquid, etching stopping is in the 2nd SOI The silicon dioxide layer that piece top layer silicon face generates after aoxidizing, release are located at the silica membrane of the 2nd SOI top layer silicon face；
(9) ZnO or SnO is sputtered on silica membrane surface using the method for magnetron sputtering2These are with semiconductive The sensitive material of matter, forms sensitive thin film, and sensitive thin film is used as the top electrode of CMUTs gas sensor simultaneously；
(10) photoetching is sequentially etched sensitive thin film, electric insulating film and pillar using wet etching, and etching stopping is under Lower electrode pad position is exposed in the upper surface of electrode electrical connection；
(11) in sensitive material upper surface spin coating photoresist, photoetching, and splash-proofing sputtering metal layer (such as metallic aluminium, gold these often With electrode material), electrode pad is formed using stripping method, and anneal and be electrically connected to reduce sensitive thin film (i.e. top electrode) and lower electrode The contact resistance respectively between upper and lower electrode pad is connect, the highly selective CMUTs gas sensor of multi-parameter is obtained.
To further increase sensitive material to the selectivity of tested gas, the later technique step of above-mentioned processing step (9) Cataclysm turns to:
(10) synthesis is used for the solution of chemical modification, and sensitive thin film is immersed progress surface in solution and is modified, is improved sensitive Sensitive property between film and tested gas；
(11) photoetching is sequentially etched sensitive thin film, electric insulating film and pillar using wet etching, and etching stopping is under Lower electrode pad position is exposed in the upper surface of electrode electrical connection；
(12) in sensitive thin film and the upper surface spin coating photoresist of the lower electrode exposed electrical connection, photoetching, and gold is sputtered Belong to layer (such as metallic aluminium, these golden common electrode materials), electrode pad is formed using stripping method, and anneal to reduce sensitive material Layer (i.e. top electrode) and lower electrode are electrically connected the contact resistance between upper and lower electrode pad respectively, obtain multi-parameter high selection Property CMUTs gas sensor.
Compared with prior art, the invention has the following beneficial effects:
Sensitive material and upper electrode layer use independent design in existing CMUT structure, and sensitive material is only used for selectivity Tested gas is adsorbed, top electrode is for loading static excitation；Only cause film quality after sensitive material and the effect of tested gas It changes, changes so as to cause resonance frequency and realize gas concentration measurement, this test method using single output parameter is difficult To identify physically or chemically similar gas molecule, the wrong report of Yi Yinqi sensor.And the sensitive thin film that the present invention uses is same Shi Zuowei is sensitive and electrode material, tested gas molecule can not only cause vibration film quality after interacting with sensitive thin film Variation can also cause the variation for powering on electrode resistance；The variation of vibration film quality can cause resonance frequency to change, together The variation of Shi Shang electricity electrode resistance can cause the electrostatic force loaded on vibration film to change, so as to cause vibration film amplitude It changes, physics, chemical property can be realized by CMUTs resonance frequency and vibration film vibration displacement both parameters The identification of similar or similar tested gas molecule, and then the selectivity of sensor can be effectively improved.Compared to top electrode and quick Feel the conventional CMUTs gas sensor that material layer uses independent design, the top electrode and sensitivity of CMUTs gas sensor of the present invention Material layer (i.e. sensitive thin film) other than having the above advantages, additionally aids reduction using integrated design for same film layer Film quality, and CMUTs unit consistency is good, frequency noise is small, helps to improve detection sensitivity and detectable limit.
Further, the repeatability or restorability of existing CMUTs gas sensor are poor, sensitive material and tested gas After interaction, gas molecule is difficult to completely disengage sensitive material, influences the accuracy of measurement result again.CMUTs of the present invention The sensitive thin film (being also top electrode) of gas sensor is sensitive using the metal oxide thin films with vapor sensitivity Film can cause simultaneously wave film quality and film resistor to change after acting on tested gas, utilize semiconductor alloy oxygen The repeatability that there is compound film the characteristic of repeatability very well can effectively improve CMUTs gas sensor under temperature regulation；
The highly selective CMUTs gas sensor of multi-parameter of the present invention when in use, when tested gas and sensitive thin film are mutual After effect, the quality and resistance of sensitive thin film change simultaneously；Two kinds of outputs are displaced by resonance frequency and vibration of thin membrane The detection of parameter can be realized the detection of tested gas, and use process is simple and testing result is accurate, effect is good.Further , sensitive thin film is the metal oxide thin films with vapor sensitivity, energy after sensitive thin film and the effect of tested gas Enough while wave film quality and film resistor being caused to change；It is passed by adjusting the highly selective CMUTs gas of the multi-parameter The operating temperature of sensor realizes that the highly selective CMUTs gas sensor of the multi-parameter examines the multiplicating of tested gas It surveys, improves repeatability.
The preparation method of the highly selective CMUTs gas sensor of multi-parameter of the present invention is simple, is easily achieved, and prepare CMUTs gas sensor has excellent performance.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of the highly selective CMUTs gas sensor of multi-parameter of the present invention, wherein Fig. 1 (a) For the sectional side elevation of the highly selective CMUTs gas sensor of multi-parameter, Fig. 1 (b) is the vertical view of part below Section A-A in Fig. 1 (a) Figure；
Fig. 2 is an a kind of variation structural representation of highly selective CMUTs gas sensor diffraction grating of multi-parameter of the present invention Figure；
Fig. 3 is a kind of highly selective CMUTs gas sensor sensitive material of multi-parameter (while being top electrode) of the present invention One variation structural schematic diagram；
Fig. 4 is a kind of operation principle schematic diagram of the highly selective CMUTs gas sensor of multi-parameter of the present invention, wherein Fig. 4 (a) load and sensitive thin film and gas interaction schematic diagram when CMUTs gas sensor work highly selective for multi-parameter；Figure Sensitive thin film adsorption and desorption are tested the vibration of gas rear film when 4 (b) CMUTs gas sensor work highly selective for multi-parameter Dynamic displacement changes over time schematic diagram；Fig. 4 (c) is that sensitive thin film is inhaled when the highly selective CMUTs gas sensor of multi-parameter works It echos resonance frequency after desorption is tested gas and changes over time schematic diagram；
Fig. 5 is a kind of typical production process flow chart of the highly selective CMUTs gas sensor of multi-parameter of the present invention；
Fig. 6 is the variation process flow of highly selective CMUTs gas sensor preparation process of multi-parameter of the present invention a kind of Figure；
In figure, 1- sensitive thin film, 2- electric insulating film, 3- pillar, 4- cavity, electrode is electrically connected under 5-, 6- diffraction grating, 7- electrical connection, 8- transparent substrates, 9- electrode pad.
Specific embodiment
Hereinafter, the present invention is described in detail in conjunction with the accompanying drawings and embodiments.
(a), Fig. 1 (b) and Fig. 2 referring to Fig.1, the overall structure of the highly selective CMUTs gas sensor of multi-parameter of the present invention It is followed successively by from top to bottom including sensitive thin film 1, electric insulating film 2, cavity 4, diffraction grating 6 and transparent substrates 8.Wherein, quick Feel film 1 and be used as CMUT top electrode simultaneously, is pillar 3 around cavity 4, diffraction grating 6 is used as electrode under CMUTs, diffraction simultaneously Structure around grating 6 is electrically connected 5 between lower electrode, setting electrical connection 7 between each grating of diffraction grating 6.Tested gas point Two kinds of parameters of CMUTs gas sensor resonance frequency and vibration displacement are caused to occur simultaneously after son and sensitive thin film interaction The height of tested gas molecule is realized in variation by the vibration displacement variation of resonance frequency and vibration film under fixed frequency Selective enumeration method.
Sensitive thin film 1 uses while having vapor sensitivity and the adjustable semiconductor oxide materials of conductivity, with quilt It is not only able to cause the variation of itself film quality after surveying gas effect, and resistance can also be caused to change, sensitive thin film 1 Using such as SnO2、ZnO、Fe2O3Or WO3These metal oxide thin films；Sensitive thin film 1 is used as sensitive material simultaneously And top electrode；Thickness and the shape design of sensitive thin film 1, which should be able to meet, to be increased specific surface area, guarantees electric conductivity and reduce and electricity The requirement of thermal stress between insulation film 2.
Electric insulating film 2 is also used to realize top electrode (in the present invention other than a part as CMUT vibration film Sensitive thin film 1) with being electrically insulated between lower electrode (diffraction grating 6), electric insulating film 2 be using SiO2、Si3N4Or SiC these The film of insulating materials, the thickness of electric insulating film 2 and the size design of radius are decided by the work frequency of CMUTs gas sensor Rate.Electric insulating film 2 and sensitive thin film 1 collectively form the vibration film of CMUTs gas sensor of the present invention, vibration film it is total Thickness and radius size finally determine CMUTs working frequency.
Cavity 4 is vacuum chamber, and the height of cavity 4 determines the operating voltage of CMUTs gas sensor, and the shape of cavity 4 can For round, rectangular and regular hexagon etc..
Pillar 3 is located at 4 around cavity, and 3 height of pillar is equal with 4 height of cavity, and SiO can be used in the material of pillar 32、SiC Or Si3N4These materials.
6 one side of diffraction grating to form diffraction light from the reflected light of vibration film, is on the other hand used as CMUTs The lower electrode of gas sensor；Diffraction grating 6 uses conductive material, such as low-resistance silicon, low-resistance polysilicon these materials；Diffraction grating Setting electrical connection 7 between 6 each grating；The design of the grating space and grating quantity of diffraction grating 6 is according to the wavelength of incident light Depending on 4 radius of cavity, while it need to guarantee that there is sufficiently conductive property between lower electrode；The thickness and 6 phase of diffraction grating of electrical connection 7 Together, the width dimensions for being electrically connected 7 should be guaranteed that conductive connection between each grating and resistance are small as far as possible；The shape of diffraction grating 6 It may be designed as the circular ring shape as shown in Fig. 1 (b), may be designed in comb teeth-shaped as shown in Figure 2.
Lower electrode electrical connection 5 for realizing between all lower electrodes (i.e. diffraction grating) of CMUTs gas sensor and Lower being electrically connected between electrode and external power supply, lower electrode are electrically connected the material of 5 material therefors and thickness and diffraction grating 6 Respectively corresponded with thickness identical, the shape of lower electrode electrical connection 5 is identical as 3 cross-sectional shape of pillar.
Transparent substrates 8 use transparent material, the material of use such as 33 glass of BF or Pyrex7740 glass these transparent materials Material, for realizing the incidence and the detection of diffraction light of laser.
Pillar 3, lower electrode electrical connection 5 and 8 material therefor of transparent substrates around electric insulating film 2, cavity 4 should have Similar thermal expansion coefficient causes thermal stress because thermal expansion coefficient mismatches, and then subtract to reduce in temperature changing process The small influence to CMUTs gas sensor detection property.This is because CMUTs gas sensor of the present invention mainly utilizes semiconductor oxygen Compound at high temperature adsorbed gas, when temperature reduces, the property of desorption improves the repeatability of CMUTs gas sensor, Therefore, the structure of CMUTs gas sensor itself needs have good temperature stability.
Under normal circumstances, any two kinds of institutes in electric insulating film, the pillar around cavity, diffraction grating and transparent substrates The thermal expansion coefficient of the selection of material should be not much different in 20%, and thermal expansion coefficient is closer to better.
To further decrease sensitive thin film 1 and insulation film 2 in temperature changing process since thermal expansion coefficient mismatches Caused by thermal stress, Graphic Design can be used in sensitive thin film 1, i.e., the electric insulating film 2 being only covered in right above cavity 4, The shape of sensitive thin film 1 is as shown in Figure 3 at this time.
The working principle of the highly selective CMUTs gas sensor of multi-parameter of the present invention: when tested gas and sensitive material After (i.e. sensitive thin film 1) interaction, the quality and resistance of sensitive thin film 1 change simultaneously；The change of 1 mass of sensitive thin film The variation of vibration film resonance frequency can be caused by changing, and the condition that the DC voltage and alternating voltage amplitude loaded remains unchanged Under, the variation of 1 resistance of sensitive thin film can then cause load CMUTs gas sensors electrode both ends effective voltage to change, into And cause the variation of electrostatic force and vibration amplitude；It can be realized by the detection of two kinds of output parameters of resonance frequency and vibration displacement Highly selective, the highly sensitive detection of tested gas.
In addition, when sensitive thin film is the metal oxide thin films with vapor sensitivity (as used SnO2Film, ZnO film, Fe2O3Film or WO3Film these metal oxide thin films with vapor sensitivity) when, due to partly leading Oxide body can be adjusted by temperature when being used for gas sensitization and obtain repeatability, therefore CMUTs gas sensing of the present invention well Device is used for the repetition detection performance having when gas detection.
Working principle in conjunction with attached drawing 4 and the highly selective CMUTs gas sensor of multi-parameter of the present invention is more to the present invention The specifically used side of the highly selective CMUTs gas sensor of parameter describes in detail.Referring to Fig. 4 (a), in CMUTs of the present invention When gas sensor works, direct current and alternating voltage excitation need to be loaded simultaneously between sensitive thin film 1 and lower electrode, so that by quick The vibration film that sense film 1 and electric insulating film 2 are constituted vibrates, and carries out heating to CMUTs gas sensor until sensitive The optimum temperature of film 1 and tested gas reaction.At this point, sensitive thin film 1 adsorbs tested gas, sensitive thin film 1 and tested gas Two kinds of parameters are caused to change after interaction, i.e., the quality of sensitive thin film 1 and resistance change.The electricity of sensitive thin film 1 Resistiveization can then cause load in CMUTs gas sensor interelectrode effective voltage V above and belowCIt changes, in resonance frequency It under conditions of remaining unchanged, then can change the vibration amplitude of vibration film, pass through the displacement detecting technology based on the interference of light Realize the detection of vibration film change in displacement；When temperature reduces, after 1 desorption of sensitive thin film is tested gas, vibration amplitude restores Initial value, shown in schematic illustration such as Fig. 4 (b).In addition, 1 mass of sensitive thin film, which changes, can change CMUTs gas sensor Resonance frequency can realize the detection of resonance frequency by frequency sweep or resonance circuit, can reflect that tested gas is dense by resonance frequency shift Degree, when temperature reduces, after tested gas is separated with sensitive thin film 1, film quality is restored to initial value, at this point, resonance frequency is restored The resonant frequency value to before being acted on gas, shown in schematic illustration such as 4 (c).Miniature laser transmitter, laser detector can be with CMUTs gas sensor integrates the optical detection to realize vibration film displacement；Resonance circuit can be with CMUTs gas sensor collection At the detection for realizing resonance frequency；MEMS heater can be integrated with CMUTs and be mentioned with the interaction for sensor and tested gas For temperature condition.
A kind of main technique step of typical production process process of the highly selective CMUTs gas sensor of multi-parameter of the present invention Suddenly are as follows:
(1) the first SOI piece 10 is taken, and separately takes transparent 33 chip glass 8 of BF, to 33 glass of the first SOI piece 10 and BF The surface of glass chip 8 carries out standard cleaning, spare；
(2) 33 chip glass 8 of top layer silicon 11 and BF of SOI piece 10 is carried out under cryogenic using anode linkage method Anode linkage, 33 chip glass 8 of BF form transparent substrates；
(3) using the 80% of chemical mechanical polishing method removal 10 substrate silicon thickness of SOI piece, then it is surplus with buffering etching liquid removal Remaining 20% base silicon, etching stopping is in the buried silicon dioxide layer surface of SOI piece 10；
(4) photoetching, graphical cavity shape, the buried silicon dioxide layer layer of the first SOI piece 10 of wet etching remove cavity figure Silica in shape window, etching stopping form cavity structure and pillar 3 in the top layer silicon face of the first SOI piece 10；Simultaneously The 2nd SOI piece 12 is separately taken to clean, it is spare；
(5) photoetching, graphical diffraction grating shape, the top layer silicon of the first SOI piece 10 of wet etching, etching stopping is in BF 33 chip glass, 8 upper surface forms diffraction grating；Use oxidizing process in the top layer silicon Surface Creation two of the 2nd SOI piece 12 simultaneously Silicon oxide layer 13；
(6) use watery fusion bonding method by 12 top layer of silica pillar 3 and the 2nd SOI piece on the first SOI piece 10 Silicon dioxide layer 13 on silicon carries out vacuum bonding, and cavity is vacuum sealed at this time, forms cavity 4；
(7) using the 80% of the method removal 12 substrate silicon thickness of the 2nd SOI piece of chemically mechanical polishing, then etching liquid is used Remaining 20% is removed, the buried silicon dioxide layer of the 2nd SOI piece 12 is exposed；Again using the method removal the of dry or wet etch The buried silicon dioxide layer layer of two SOI pieces 12 exposes the 2nd SOI piece 12 remaining top layer silicon after aoxidizing；
(8) the 2nd SOI piece 12 remaining top layer silicon after aoxidizing is etched using buffering etching liquid, etching stopping is in titanium dioxide Silicon layer 13 forms electric insulating film 2 at this time；
(9) ZnO sensitive material is sputtered in the upper surface of electric insulating film 2 using the method for magnetron sputtering, is formed sensitive Film 1；
(10) photoetching is graphically sequentially etched sensitive thin film 1, electric insulating film 2 and pillar 3 using wet etching, carves Erosion stops at the upper surface of lower electrode electrical connection 5, exposes lower electrode pad position；
(11) it in sensitive thin film 1 and the upper surface spin coating photoresist of the lower electrode exposed electrical connection 5, photoetching, and sputters Metallic aluminium forms electrode pad 9 (referring to top electrode pad and lower electrode pad) using stripping method, and it is sensitive thin to reduce to anneal Contact resistance between film 1 and lower electrode electrical connection 5 and electrode pad 9.
To further increase sensitive material 1 to the selectivity of tested gas, the later technique step of above-mentioned processing step (8) It is rapid alterable are as follows:
(9) ZnO sensitive thin film 14 is sputtered in the upper surface of electric insulating film 2 using the method for magnetron sputtering；
(10) the synthesis solution modified for surface, it is modified by surface is carried out in the immersion solution of ZnO sensitive thin film 14, in turn The sensitive property between ZnO sensitive thin film 14 and tested gas is improved, final sensitive material 1 is formed；
(11) photoetching is sequentially etched sensitive thin film 1, electric insulating film 2 and pillar 3, etching stopping using wet etching In the upper surface of lower electrode electrical connection 5, expose lower electrode pad position；
(12) in 1 upper surface spin coating photoresist of sensitive thin film, photoetching, and splash-proofing sputtering metal aluminium, electricity is formed using lift-off technology Pole pad 9, and anneal to reduce the contact resistance between sensitive thin film 1 and lower electrode electrical connection 5 and electrode pad 9.
The foregoing is merely one embodiment of the present invention, it is not all of or unique embodiment, this field is common Any equivalent transformation that technical staff takes technical solution of the present invention by reading description of the invention, is the present invention Claim covered.

Claims (10)

1. a kind of highly selective CMUTs gas sensor of multi-parameter, which is characterized in that from top to bottom successively include sensitive thin film (1), electric insulating film (2), cavity (4), diffraction grating (6) and transparent substrates (8)；The sensitive thin film (1) is used as top electrode, With vapor sensitivity and can with the changed performance of resistance after gas effect；Diffraction grating (6) is used as lower electrode； Sensitive thin film (1) and electric insulating film (2) collectively form vibration film.
2. the highly selective CMUTs gas sensor of a kind of multi-parameter according to claim 1, which is characterized in that sensitive thin Film (1) is the metal oxide thin films with vapor sensitivity, and sensitive thin film (1) can be same after acting on tested gas The quality and resistance of Shi Yinqi sensitive thin film (1) change.
3. according to right want 2 described in a kind of highly selective CMUTs gas sensor of multi-parameter, which is characterized in that sensitive thin film (1) SnO is used2Film, ZnO film, Fe2O3Film or WO3Film.
4. the highly selective CMUTs gas sensor of a kind of multi-parameter according to claim 1, which is characterized in that sensitive thin Film (1) is covered on electric insulating film (2), and only corresponding region right above covering cavity (4).
5. the highly selective CMUTs gas sensor of a kind of multi-parameter according to claim 1, which is characterized in that diffraction light Grid (6) are located inside cavity (4), are arranged between each grating of diffraction grating (6) and between diffraction grating (6) and surrounding structure It is electrically connected (7), diffraction grating (6) is used to the light reflected by vibration film carrying out diffraction.
6. the highly selective CMUTs gas sensor of a kind of multi-parameter according to claim 1, which is characterized in that electrical isolation Material selected by any two kinds in pillar (3), diffraction grating (6) and transparent substrates (8) around film (1), cavity (4) Thermal expansion coefficient is not much different in 20%.
7. the application method of the highly selective CMUTs gas sensor of multi-parameter described in claim 1-6 any one, feature exist In process includes:
After tested gas and sensitive thin film (1) interact, the quality and resistance of sensitive thin film (1) change simultaneously； It can be realized the detection of tested gas by the detection of resonance frequency and vibration displacement both output parameters to vibration film.
8. application method according to claim 7, which is characterized in that sensitive thin film (1) is half with vapor sensitivity It can cause the quality of wave sensitive thin film (1) after conductor metal sull, sensitive thin film (1) and the effect of tested gas simultaneously It changes with resistance；
By adjusting the temperature of the highly selective CMUTs gas sensor of multi-parameter, realize that the multi-parameter is highly selective CMUTs gas sensor detects the multiplicating of tested gas.
9. benefit requires the preparation method of the highly selective CMUTs gas sensor of multi-parameter described in 1-6 any one, feature exists In including the following steps:
S1 takes the first SOI piece and transparent glass wafer cleaning, spare；
The top layer silicon of first SOI piece and transparent glass chip under cryogenic using anode linkage method are carried out anode key by S2 It closes；
S3 removes the 80% of the first SOI piece substrate silicon thickness using chemical mechanical polishing method, then remaining with buffering etching liquid removal 20% base silicon, etching stopping is in the first SOI piece buried silicon dioxide layer；
S4, photoetching, graphical cavity shape, the first SOI piece buried silicon dioxide layer layer of wet etching remove two in graphical window Silica, etching stopping form the pillar (3) around cavity (4) and cavity (4) in the first SOI piece top layer silicon face；Separately take one 2nd SOI piece is cleaned as the 2nd SOI piece, is spare by SOI piece；
S5, photoetching, graphical diffraction grating shape, the first SOI piece top layer silicon of wet etching, etching stopping is in transparent glass chip Upper surface is formed diffraction grating (6)；The top layer silicon for aoxidizing the 2nd SOI piece, in the top layer silicon Surface Creation dioxy of the 2nd SOI piece SiClx layer；
Table in S6, the buried silicon dioxide layer for being retained the first SOI on piece using watery fusion bonding method and the 2nd SOI piece top layer silicon The silicon dioxide layer in face carries out vacuum bonding, at this time by cavity (4) vacuum sealing；
S7, it is surplus using the 2nd SOI piece base silicon of the method removal 80% of chemically mechanical polishing, then using buffering etching liquid removal Remaining 20% base silicon, expose the 2nd SOI piece buried silicon dioxide layer；2nd SOI is removed using the method for dry or wet etch Piece buried silicon dioxide layer layer exposes the 2nd SOI piece remaining top layer silicon after aoxidizing；
S8 etches the 2nd SOI piece remaining top layer silicon after aoxidizing using buffering etching liquid, and etching stopping is in the 2nd SOI piece top The silicon dioxide layer that layer silicon face is generated through oxidation, release are located at the silica membrane of the 2nd SOI top layer silicon face, form electricity Insulation film (2)；
S9 sputters sensitive thin film (1) on electric insulating film (2) surface using the method for magnetron sputtering, and sensitive thin film (1) is used as upper Electrode；
S10, photoetching are sequentially etched sensitive thin film (1), electric insulating film (2) and pillar (3), etch-stop using wet etching Lower electrode pad position is exposed in the upper surface for terminating in lower electrode electrical connection (5)；
S11, in sensitive thin film (1) and upper surface spin coating photoresist, photoetching and the sputtering of the lower electrode exposed electrical connection (5) Metal layer forms electrode pad (9) using stripping method, and anneals to reduce the contact between sensitive thin film (1) and electrode pad Resistance obtains the highly selective CMUTs gas sensor of multi-parameter.
10. benefit requires the preparation method of the highly selective CMUTs gas sensor of multi-parameter described in 1-6 any one, feature It is, includes the following steps:
S1 takes the first SOI piece and transparent glass wafer cleaning, spare；
The top layer silicon of first SOI piece and transparent glass chip under cryogenic using anode linkage method are carried out anode key by S2 It closes；
S3 removes the 80% of the first SOI piece substrate silicon thickness using chemical mechanical polishing method, then remaining with buffering etching liquid removal 20% base silicon, etching stopping is in the first SOI piece buried silicon dioxide layer；
S4, photoetching, graphical cavity shape, the first SOI piece buried silicon dioxide layer layer of wet etching remove two in graphical window Silica, etching stopping form cavity (4) and pillar (3) in the first SOI piece top layer silicon face；Separately take a SOI piece as second 2nd SOI piece is cleaned, is spare by SOI piece；
S5, photoetching, graphical diffraction grating shape, the first SOI piece top layer silicon of wet etching, etching stopping is in transparent glass chip Upper surface is formed diffraction grating (6)；The top layer silicon for aoxidizing the 2nd SOI piece, in the top layer silicon Surface Creation dioxy of the 2nd SOI piece SiClx layer；
Table in S6, the buried silicon dioxide layer for being retained the first SOI on piece using watery fusion bonding method and the 2nd SOI piece top layer silicon The silicon dioxide layer in face carries out vacuum bonding, at this time by cavity (4) vacuum sealing；
S7, it is surplus using the 2nd SOI piece base silicon of the method removal 80% of chemically mechanical polishing, then using buffering etching liquid removal Remaining 20% base silicon, expose the 2nd SOI piece buried silicon dioxide layer；2nd SOI is removed using the method for dry or wet etch Piece buried silicon dioxide layer layer exposes the 2nd SOI piece remaining top layer silicon after aoxidizing；
S8 etches the 2nd SOI piece remaining top layer silicon after aoxidizing using buffering etching liquid, and etching stopping is in the 2nd SOI piece top The silicon dioxide layer that layer silicon face is generated through oxidation, release are located at the silica membrane of the 2nd SOI top layer silicon face, form electricity Insulation film (2)；
S9 sputters sensitive thin film (1) on electric insulating film (2) surface using the method for magnetron sputtering, and sensitive thin film (1) is used as upper Electrode；
S10, synthesis are used for the solution of chemical modification, and sensitive thin film (1) is immersed progress surface in solution and is modified, is improved sensitive thin Sensitive property between film (1) and tested gas；
S11, photoetching are sequentially etched sensitive thin film (1), electric insulating film (2) and pillar (3), etch-stop using wet etching Lower electrode pad position is exposed in the upper surface for terminating in lower electrode electrical connection (5)；
S12, in sensitive thin film (1) and upper surface spin coating photoresist, photoetching and the sputtering of the lower electrode exposed electrical connection (5) Metal layer forms electrode pad (9) using stripping method, and anneals to reduce the contact between sensitive thin film (1) and electrode pad Resistance obtains the highly selective CMUTs gas sensor of multi-parameter.
CN201910696445.0A 2019-07-30 2019-07-30 Multi-parameter high-selectivity CMUTs gas sensor and use and preparation method thereof Active CN110361445B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910696445.0A CN110361445B (en) 2019-07-30 2019-07-30 Multi-parameter high-selectivity CMUTs gas sensor and use and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910696445.0A CN110361445B (en) 2019-07-30 2019-07-30 Multi-parameter high-selectivity CMUTs gas sensor and use and preparation method thereof

Publications (2)

Publication Number Publication Date
CN110361445A true CN110361445A (en) 2019-10-22
CN110361445B CN110361445B (en) 2020-10-27

Family

ID=68222668

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910696445.0A Active CN110361445B (en) 2019-07-30 2019-07-30 Multi-parameter high-selectivity CMUTs gas sensor and use and preparation method thereof

Country Status (1)

Country Link
CN (1) CN110361445B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113325041A (en) * 2021-05-31 2021-08-31 吉林大学 DMMP sensor based on gold-modified oxygen vacancy-rich tin dioxide and preparation method thereof
CN113548636A (en) * 2020-04-24 2021-10-26 绍兴中芯集成电路制造股份有限公司 MEMS driving device and forming method thereof

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1381397A (en) * 2002-06-07 2002-11-27 西安交通大学 Frequency output type combined microbeam resonator with self temp ecompensation function
US20040197227A1 (en) * 2002-11-06 2004-10-07 Steinar Hauan MEMS membrane based sensor
US20050262943A1 (en) * 2004-05-27 2005-12-01 Glenn Claydon Apparatus, methods, and systems to detect an analyte based on changes in a resonant frequency of a spring element
CN102620878A (en) * 2012-03-15 2012-08-01 西安交通大学 Capacitive micromachining ultrasonic sensor and preparation and application methods thereof
CN103411864A (en) * 2013-08-05 2013-11-27 深迪半导体(上海)有限公司 MEMS sensor for measuring gas suspended particle concentration based on structural resonance
CN204694669U (en) * 2015-02-16 2015-10-07 郑州炜盛电子科技有限公司 Mems gas sensor
CN107089640A (en) * 2017-05-02 2017-08-25 歌尔股份有限公司 A kind of MEMS chip and preparation method
CN107219270A (en) * 2017-06-01 2017-09-29 大连理工大学 It is a kind of new based on redox graphene tungsten disulfide composite ammonia gas sensor and its preparation technology
CN108107081A (en) * 2017-11-30 2018-06-01 中国科学院上海微系统与信息技术研究所 A kind of manufacturing method of gas sensor and the gas sensor thus manufactured
CN109000577A (en) * 2018-07-02 2018-12-14 西安交通大学 Cladding nuclear fuels caliber is to deformation measuring system under a kind of high temperature iodine steam environment
CN109270626A (en) * 2018-11-28 2019-01-25 南京邮电大学 A kind of tunable gratings filter and preparation method based on SOI wafer
CN109879239A (en) * 2019-01-23 2019-06-14 西安交通大学 A kind of micro- resonance pressure sensor chip of double H-type strut-beam silicon and preparation method thereof

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1381397A (en) * 2002-06-07 2002-11-27 西安交通大学 Frequency output type combined microbeam resonator with self temp ecompensation function
US20040197227A1 (en) * 2002-11-06 2004-10-07 Steinar Hauan MEMS membrane based sensor
US20050262943A1 (en) * 2004-05-27 2005-12-01 Glenn Claydon Apparatus, methods, and systems to detect an analyte based on changes in a resonant frequency of a spring element
CN102620878A (en) * 2012-03-15 2012-08-01 西安交通大学 Capacitive micromachining ultrasonic sensor and preparation and application methods thereof
CN103411864A (en) * 2013-08-05 2013-11-27 深迪半导体(上海)有限公司 MEMS sensor for measuring gas suspended particle concentration based on structural resonance
CN204694669U (en) * 2015-02-16 2015-10-07 郑州炜盛电子科技有限公司 Mems gas sensor
CN107089640A (en) * 2017-05-02 2017-08-25 歌尔股份有限公司 A kind of MEMS chip and preparation method
CN107219270A (en) * 2017-06-01 2017-09-29 大连理工大学 It is a kind of new based on redox graphene tungsten disulfide composite ammonia gas sensor and its preparation technology
CN108107081A (en) * 2017-11-30 2018-06-01 中国科学院上海微系统与信息技术研究所 A kind of manufacturing method of gas sensor and the gas sensor thus manufactured
CN109000577A (en) * 2018-07-02 2018-12-14 西安交通大学 Cladding nuclear fuels caliber is to deformation measuring system under a kind of high temperature iodine steam environment
CN109270626A (en) * 2018-11-28 2019-01-25 南京邮电大学 A kind of tunable gratings filter and preparation method based on SOI wafer
CN109879239A (en) * 2019-01-23 2019-06-14 西安交通大学 A kind of micro- resonance pressure sensor chip of double H-type strut-beam silicon and preparation method thereof

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
HALEH NAZEMI: "Advanced Micro- and Nano-Gas Sensor Technology:A Review", 《SENSORS》 *
卓文军: "用于气体传感的电容式微机械超声阵列设计", 《压电与声光》 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113548636A (en) * 2020-04-24 2021-10-26 绍兴中芯集成电路制造股份有限公司 MEMS driving device and forming method thereof
CN113548636B (en) * 2020-04-24 2024-05-17 绍兴中芯集成电路制造股份有限公司 MEMS driving device and forming method thereof
CN113325041A (en) * 2021-05-31 2021-08-31 吉林大学 DMMP sensor based on gold-modified oxygen vacancy-rich tin dioxide and preparation method thereof

Also Published As

Publication number Publication date
CN110361445B (en) 2020-10-27

Similar Documents

Publication Publication Date Title
CN105784189B (en) Si-glass-silicon structure surface acoustic wave temperature and pressure integrated sensor and preparation
US6797631B2 (en) High sensitive micro-cantilever sensor and fabricating method thereof
CN108918662B (en) CMUTs fluid density sensor and preparation method thereof
CN102520032B (en) CMUT (Capacitive Micromachined Ultrasonic Transducer)-based biochemical transducer and manufacturing method thereof
JP2007528153A (en) CMUT device and manufacturing method
CN104990968B (en) Moisture sensor device based on FBAR
CN109945966A (en) The single electrode hydrophone of AlN bilayer film
CN102353610A (en) Capacitance micro-machining ultrasonic sensor for measuring density and production method thereof
CN113241401B (en) Multiferroic heterojunction magnetic sensor, preparation method thereof and electronic equipment
CN110361445A (en) A kind of highly selective CMUTs gas sensor of multi-parameter and its use and preparation method
CN105547464B (en) MEMS piezoelectric vector hydrophone with cascaded structure and preparation method thereof
CN103454345B (en) Based on the marine biochemical matter monitoring sensor of CMUT and preparation thereof and measuring method
CN102520147B (en) Capacitive micromachined ultrasonic transducer (CMUT) for detecting trace biochemical substances and preparation method for CMUT
Mahmud et al. A low-power gas sensor for environmental monitoring using a capacitive micromachined ultrasonic transducer
Park et al. Fabricating capacitive micromachined ultrasonic transducers with direct wafer-bonding and LOCOS technology
CN105509872B (en) A kind of MEMS piezoelectric vector hydrophone and preparation method thereof
CN110398536A (en) A kind of multi-function membrane high sensitivity CMUTs gas sensor and preparation method thereof
RU2212671C1 (en) Tunnel nanotransmitter of mechanical vibrations and process of its manufacture
Midtbo et al. Fabrication and characterization of CMUTs realized by wafer bonding
CN103217228B (en) Temperature sensor based on capacitive micromachined ultrasonic transducer (CMUT) and preparation and application method of temperature sensor
US20070251321A1 (en) Sensor, Sensor Arrangement and Measuring Method
CA2842778C (en) Piezoelectric sensors and sensor arrays for the measurement of wave parameters in a fluid, and method of manufacturing therefor
KR100450262B1 (en) High sensitive cantilever sensor and method for fabrication thereof
CN113731779B (en) Capacitive micro-machined ultrasonic transducer based on SOI buried oxide layer sacrificial release technology and preparation method thereof
Schroder et al. A capacitance ultrasonic transducer for high-temperature applications

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant