CN110244211A - A kind of transient thermal resistance test circuit - Google Patents

A kind of transient thermal resistance test circuit Download PDF

Info

Publication number
CN110244211A
CN110244211A CN201910631328.6A CN201910631328A CN110244211A CN 110244211 A CN110244211 A CN 110244211A CN 201910631328 A CN201910631328 A CN 201910631328A CN 110244211 A CN110244211 A CN 110244211A
Authority
CN
China
Prior art keywords
power
constant current
measured device
voltage
current load
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201910631328.6A
Other languages
Chinese (zh)
Other versions
CN110244211B (en
Inventor
周鹏
孙衍翀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Hua Feng Measurement And Control Technology Ltd By Share Ltd
Original Assignee
Beijing Hua Feng Measurement And Control Technology Ltd By Share Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Hua Feng Measurement And Control Technology Ltd By Share Ltd filed Critical Beijing Hua Feng Measurement And Control Technology Ltd By Share Ltd
Priority to CN201910631328.6A priority Critical patent/CN110244211B/en
Publication of CN110244211A publication Critical patent/CN110244211A/en
Application granted granted Critical
Publication of CN110244211B publication Critical patent/CN110244211B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2607Circuits therefor
    • G01R31/2608Circuits therefor for testing bipolar transistors
    • G01R31/2619Circuits therefor for testing bipolar transistors for measuring thermal properties thereof
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2607Circuits therefor
    • G01R31/2621Circuits therefor for testing field effect transistors, i.e. FET's
    • G01R31/2628Circuits therefor for testing field effect transistors, i.e. FET's for measuring thermal properties thereof

Abstract

The present invention provides a kind of transient thermal resistances to test circuit, comprising: measured device is divided into a driving port and two working ports with working characteristics, two working port conductings when the driving port applies driving voltage;The test circuit includes: Constant Current Load, and for setting constant current value, input terminal is connect with first working port of measured device;Power power-supply, anode connect the second working port of the measured device, and cathode connects the output end of the Constant Current Load;Power supply, anode connection operational amplifier non-inverting input terminal are controlled, cathode connects the output end of the Constant Current Load;The output end of the operational amplifier connects the driving end of the measured device, the first working port of the inverting input terminal connection measured device of operational amplifier.The present invention can solve the problems such as voltage and current Designing power amplifier difficulty is big, fever is serious, efficiency is lower, circuit is complicated in existing transient thermal resistance test circuit.

Description

A kind of transient thermal resistance test circuit
Technical field
The present invention relates to ic test technique field, in particular to a kind of transient thermal resistance tests circuit.
Background technique
Currently, when power semiconductor works under the conditions of power pulse, the temperature rise of device and power pulse width and Duty ratio is related.Setting apply power, the power pulse time, pulse duty factor test condition under, pass through semiconductor devices Certain internal thermally sensitive characteristic characterizes the temperature change of device, and transient thermal resistance is calculated.The wink of semiconductor devices State thermal resistance is related with chip and the geometric dimension of encapsulation, specific heat capacity, thermal diffusion coefficient etc., therefore the transient thermal resistance of semiconductor devices It can reflect out many characteristics of device.
The testing process of transient thermal resistance test are as follows: test measured device normality junction temperature T1 → application power → test is tested device Part adds the junction temperature T2 after power → by the power calculation transient thermal resistance of T1, T2 temperature change and application.Function is applied to measured device Rate needs to set the power voltage of measured device, power current, applies power when in general testing high power device up to several Hundred to one kilowatts.
In the prior art, frequently with test circuit as shown in FIG. 1 to 3, power electricity is applied to power semiconductor Pressure and power current are to carry out transient thermal resistance test.Wherein test circuit shown in Fig. 1 is for field-effect tube such as MOSFET, IGBT Test, shown in Fig. 2, Fig. 3 test circuit be for triode test.
Fig. 1, test circuit shown in Fig. 2 use identical principle, make tested device by using the feedback of operational amplifier Grid (base) the extremely zero potential of part (MOSFET or triode), at this point, the voltage power for being connected to the remaining both ends of measured device is put The electric current that the voltage and current power amplifier that big device is exported is exported is the power voltage and power current of measured device; Test circuit shown in Fig. 3 does not use operational amplifier feedback, but directly makes the base earth of measured device (triode), Make its zero potential, at this point, being connected to measured device is left voltage and tested device that the voltage power amplifier of one end is exported The sum of Vbe voltage (voltage between base stage and emitter) of part (triode) is the power voltage of measured device, is connected to The electric current that the current power amplifier that measured device is left the other end is exported is the power current of measured device.
However problem of the prior art is, as indicated above, the required power tested measured device would generally Reach several hundred to one kilowatt, from difficult, the voltage, current power from efficiency for designing upper voltage, current power amplifier Amplifier assumes responsibility for biggish power, and fever is serious and efficiency is lower, and the volume of above-mentioned test circuit is larger from structure, circuit Also complex.
Summary of the invention
In view of this, the main purpose of the present invention is to provide a kind of transient thermal resistances to test circuit, by simplifying power source Design, keep the applicability of power source wider, test circuit power loss is smaller and easily controllable, and design is simple, small in size, can The voltage and current Designing power amplifier difficulty for effectively solving power output circuit in existing transient thermal resistance test circuit is big, fever Seriously, the problems such as efficiency is lower, volume is larger, circuit is complicated.
The technical solution adopted by the present invention is a kind of transient thermal resistance test circuit, comprising:
Measured device is divided into a driving port and two working ports with working characteristics, and the driving port, which applies, drives Two working port conductings when dynamic voltage;The test circuit includes:
Constant Current Load, for setting constant current value, input terminal is connect with first working port of measured device;
Power power-supply, anode connect the second working port of the measured device, and cathode connects the Constant Current Load Output end;
Power supply, anode connection operational amplifier non-inverting input terminal are controlled, cathode connects the output end of the Constant Current Load; The output end of the operational amplifier connects the driving end of the measured device, and the inverting input terminal connection of operational amplifier is tested First working port of device;The operational amplifier keeps the control power supply of the voltage at the first working port of measured device defeated Voltage out;
The voltage of the control power supply output is more than or equal to the minimum of driving Constant Current Load.
By upper, in the technical program, control power supply plays driving measured device closing or opening and setting Constant Current Load work Make the effect of voltage value, voltage value size need to only meet the minimum (1V or so) of Constant Current Load, and comparison is existing There is operating voltage required for the voltage power amplifier and current power amplifier in technology, substantially reduces power loss. After controlling power drives measured device closure, by the feedback of the inverting input terminal of operational amplifier by the first work of measured device Make port voltage be set as control power supply output voltage, the voltage of first working port be needed for Constant Current Load most Small operating voltage;Power power-supply plays the role of providing power voltage for measured device, and voltage is larger, due to measured device The voltage of one working port is the voltage for controlling power supply output, and it is defeated to subtract control power supply by the voltage that power power-supply exports at this time The power voltage of measured device can be obtained in voltage out, and the transient thermal resistance of the measured device can be obtained according to power current Power.This programme passes through the design for simplifying power source, by the voltage power amplifier and current power amplifier in background technique It is reduced to single power power-supply, while finished product commercial power supply can be selected in the power power-supply, simplifies test circuit power part Design, keep the applicability of power source wider, and the power output overwhelming majority of power source is applied on measured device, power It is high-efficient, test the fever, small in size of circuit;Test circuit only needs to design low power control circuit, and circuit design is simple, The power demand of transient thermal resistance test circuit can effectively be met.
The present invention also provides another transient thermal resistances to test circuit, comprising:
Measured device is divided into a driving port and two working ports with working characteristics, and the driving port, which applies, drives Two working port conductings when dynamic voltage;The test circuit includes;
Constant Current Load, for setting constant current value, input terminal is connect with first working port of measured device;
Power power-supply, anode connect the second working port of the measured device, and cathode connects the Constant Current Load Output end;
Power supply is controlled, anode connects the second working port of the measured device, and it is same that cathode connects operational amplifier Phase input terminal;The output end of the operational amplifier connects the driving end of the measured device, the anti-phase input of operational amplifier First working port of end connection measured device;The operational amplifier makes the voltage at the first working port of measured device Control the voltage of power supply output;
The difference of the voltage of the voltage and control power supply output of the power power-supply output is more than or equal to driving Constant Current Load Minimum.
By upper, in the technical program, control power supply plays driving measured device closing or opening, and sets for measured device Determine the effect of power voltage value;Power power-supply plays the role of providing power and driving Constant Current Load work for measured device, Voltage needs the voltage slightly larger than control power supply, and voltage difference meets the minimum of Constant Current Load, the constant current Load is that measured device sets power current, and the thermal resistance of the measured device can be calculated by power voltage and power current Power.
The present invention also provides another transient thermal resistances to test circuit, comprising:
Measured device is divided into a driving port and two working ports with working characteristics, and the driving port, which applies, drives Two working port conductings when dynamic voltage;The test circuit includes;
Constant Current Load, for setting constant current value, input terminal is connect with first working port of measured device;
Power power-supply, anode connect the second working port of the measured device, and cathode connects the Constant Current Load Output end;
Power supply is controlled, anode connects the driving port of the measured device, and cathode connects the defeated of the Constant Current Load Outlet;
The voltage of the control power supply output is more than or equal to the minimum of driving Constant Current Load and control power supply exists The sum of pressure drop on the measured device.
By upper, in the technical program, control power supply plays driving measured device closing or opening and driving Constant Current Load work The effect of work, voltage swing are that measured device drives voltage and Constant Current Load minimum between end and the first working port to work The sum of voltage, power power-supply play the role of providing power voltage for measured device, according to the connection type of this circuit, are tested device The power voltage of part is that the voltage of power power-supply output subtracts the operating voltage at Constant Current Load both ends, is set in conjunction with Constant Current Load The thermal resistance power of measured device can be calculated in power current.
Preferably, the connection of the anode and the second working port of measured device of the power power-supply, and, power power-supply The connection of the output end of cathode and Constant Current Load uses Kelvin's circuit connection;
Kelvin's circuit includes drive sub-circuits and sense sub-circuit.
By upper, there is bigger power current to pass through on the circuit that connect due to power power-supply with measured device, adopt With Kelvin's circuit connection, droop loss on line, keeps thermo-resistance measurement more accurate caused by can effectively reduce because of high current.
Preferably, the Constant Current Load includes being connected by metal-oxide-semiconductor, resistance, second operational amplifier with difference amplifier Constant current load circuit;
The source electrode of the metal-oxide-semiconductor is connect with resistance one end, and the drain electrode of the metal-oxide-semiconductor and the resistance other end respectively correspond the perseverance The input of current load, output end;
The non-inverting input terminal of the second operational amplifier connects an external power supply, and output end connects the grid of the metal-oxide-semiconductor Pole, inverting input terminal connect the output end of the difference amplifier;
The non-inverting input terminal and inverting input terminal of the difference amplifier are connected to the both ends of the resistance, will be described The voltage of external power supply output carries out gain and is enlarged into resistance offer constant current voltage.
By upper, this Constant Current Load combines resistance by applying external power supply and controlling the gain factor of difference amplifier It is embodied as the purpose of measured device setting power current.
Optionally, the measured device includes N-type field-effect tube, the driving port of the measured device, the first and second work Port is respectively grid, drain electrode and source electrode.
Optionally, the measured device includes triode, the driving port of the measured device, the first and second working port Respectively base stage, emitter and collector.
Optionally, it also connects on the transistor base terminal circuit resistance.
Detailed description of the invention
Fig. 1 is the circuit diagram that the prior art carries out transient thermal resistance test to field-effect tube;
Fig. 2 is a kind of circuit diagram that the prior art carries out transient thermal resistance test to triode;
Fig. 3 is another circuit diagram that the prior art carries out transient thermal resistance test to triode;
Fig. 4 is the circuit diagram for the first embodiment that transient thermal resistance of the present invention tests circuit;
Fig. 5 is the circuit diagram of Constant Current Load of the present invention;
Fig. 6 is the circuit diagram for the second embodiment that transient thermal resistance of the present invention tests circuit;
Fig. 7 is the circuit diagram for the 3rd embodiment that transient thermal resistance of the present invention tests circuit;
Fig. 8 is the circuit diagram for the fourth embodiment that transient thermal resistance of the present invention tests circuit;
Fig. 9 is the circuit diagram for the 5th embodiment that transient thermal resistance of the present invention tests circuit.
Specific embodiment
It is carried out referring to specific embodiment of Fig. 4~Fig. 8 to transient thermal resistance of the present invention test circuit detailed Explanation.
Embodiment one
One embodiment as shown in Figure 4 is by taking measured device is N-type metal-oxide-semiconductor as an example, corresponding existing skill as shown in Figure 1 Art, the transient thermal resistance test the test philosophy of circuit are as follows:
Driving power using control power supply V1 as tested metal-oxide-semiconductor drives the closing or opening of tested metal-oxide-semiconductor, simultaneously Operating voltage value needed for setting Constant Current Load;Power power-supply using power power-supply V2 as tested metal-oxide-semiconductor, to be tested MOS Pipe provides power voltage and provides operating voltage for Constant Current Load;Constant current source using Constant Current Load as tested metal-oxide-semiconductor, Power current is set for tested metal-oxide-semiconductor;
The non-inverting input terminal of the anode connection operational amplifier of the control power supply V1, the output end of the operational amplifier connect The grid of tested metal-oxide-semiconductor is connect, provides threshold voltage for its grid, the inverting input terminal of the operational amplifier connects tested metal-oxide-semiconductor Source electrode, make source voltage V1;The cathode of control power supply V1, which is connected, is connected to the source of tested metal-oxide-semiconductor after the Constant Current Load Pole;
The anode of the power power-supply V2 uses drain electrode of Kelvin's circuit connection to tested metal-oxide-semiconductor, power power-supply V2 Cathode using being connected to the source electrode of tested metal-oxide-semiconductor after Kelvin's circuit series connection Constant Current Load.The anode of the power power-supply V2 The Kelvin's circuit connected with cathode respectively includes two-way sub-circuit, and the two-way sub-circuit of anode connection is Force+ (driving Sub-circuit) and Sence+ (sense sub-circuit), the two-way sub-circuit of cathode connection is Force- (drive sub-circuits) and Sence- (sense sub-circuit) connects in circuit in Kelvin, and the port Force, which is otherwise known as, drives port, and Sence, which is otherwise known as, senses end Mouthful, it can avoid the pressure drop that power voltage generates on conducting wire by the way of Kelvin's circuit connection, make power voltage tested It is relatively accurate on device;
In the present embodiment, the voltage for controlling power supply V1 can be designed as that 1V is even more small, and specific voltage swing takes Certainly in the minimum of Constant Current Load, simple small-power integrated amplifier, which usually can be used, be can be realized;Power power-supply Finished commercial prod's linear power supply can be used in V2, since it uses Kelvin's circuit connection to the both ends of tested metal-oxide-semiconductor, on line Pressure drop is lower, is V1 according to the voltage of tested metal-oxide-semiconductor source electrode, the power voltage VDS being applied on tested metal-oxide-semiconductor can be calculated =V2-V1;
It is illustrated in figure 5 the circuit diagram of Constant Current Load in the present embodiment, by operational amplifier, difference amplifier, MOS Pipe and resistance R are connected and composed, and the non-inverting input terminal of the operational amplifier connects an external voltage Vset, output end connection The grid of metal-oxide-semiconductor, for controlling the closure or openness of metal-oxide-semiconductor, inverting input terminal connects the output end for amplifier of checking the mark, the difference The both ends for being divided to two input terminals of amplifier to be separately connected resistance R, resistance R are series between the source electrode of metal-oxide-semiconductor and output end, MOS The drain electrode of pipe connects the source electrode of tested metal-oxide-semiconductor by input terminal, and output end is separately connected control power supply V1's and power power-supply V2 Cathode.The gain factor of Vset and control difference amplifier that this constant current load circuit passes through setting, which can control, is applied to resistance The voltage at the both ends R, thus the power current exported.Such as when the gain factor of difference amplifier is 1, the function of output Rate electric current I=Vset/R;
Thus it can calculate, the transient thermal resistance power for being tested metal-oxide-semiconductor is I* (V2-V1).
It is described to use the operating voltage controlled needed for power supply V1 sets it for Constant Current Load wherein in Fig. 4 corresponding embodiment Value, and operating voltage is provided by power power-supply V2, drive Constant Current Load work to refer to: the grid and source electrode of metal-oxide-semiconductor described in Fig. 5 Pressure difference is timing, while by the circuit of V1 the drain electrode of metal-oxide-semiconductor and source electrode pressure difference is also positive, so that the drain electrode of metal-oxide-semiconductor With source conduction so that Constant Current Load output power current I be supplied to measured device.
Embodiment two
Second embodiment as shown in FIG. 6, still by taking measured device is N-type metal-oxide-semiconductor as an example, transient thermal resistance test electricity Road provides another design philosophy:
Control power supply V1 is used to be tested the power voltage value that metal-oxide-semiconductor sets its needs;Using Constant Current Load as tested Metal-oxide-semiconductor constant current source sets power current for tested metal-oxide-semiconductor;Power power-supply V2 is used to provide power for tested metal-oxide-semiconductor and be Constant Current Load provides driving voltage, driving Constant Current Load work;
The anode of the control power supply V1 connects the drain electrode of tested metal-oxide-semiconductor, and cathode connects the homophase input of operational amplifier End, the output end for far calculating amplifier connect the grid of tested metal-oxide-semiconductor, and inverting input terminal connects the source electrode of tested metal-oxide-semiconductor;
The anode of the power power-supply V2 connects the drain electrode of tested metal-oxide-semiconductor, connects tested MOS after cathode series connection Constant Current Load The source electrode of pipe;
In the present embodiment, control power supply V1 sets the power voltage that tested metal-oxide-semiconductor needs by the feedback of operational amplifier Value, though power voltage VDS=V1, also, due to there is no high current on the circuit, it does not need to connect using Kelvin's circuit It connects;The voltage of power power-supply V2 is needed slightly larger than power voltage VDS (V1), is met while provide power for tested metal-oxide-semiconductor, also It obtains so that Constant Current Load work, provides operating voltage for it, wherein the size of the difference of V2-V1 meets the minimum work of Constant Current Load Voltage;
The Constant Current Load is this test circuit configuration power current, and the constant current of circuit connection and above-described embodiment one is negative Carry identical, this will not be repeated here;
According to the power current that above-mentioned power voltage VDS (V1) and Constant Current Load are set, can calculate in the present embodiment The transient thermal resistance power of tested metal-oxide-semiconductor.
Embodiment three
Third embodiment as shown in Figure 7 corresponds to as shown in Figure 2 existing so that measured device is N-type triode as an example Technology, the transient thermal resistance test the test philosophy of circuit are as follows:
Driving power using control power supply V1 as tested triode and Constant Current Load drives the closure of tested triode Or disconnect and drive Constant Current Load work;Power power-supply using power power-supply V2 as tested triode, to be tested triode Power voltage is provided;Constant current source using Constant Current Load as tested triode sets power current for tested triode;
The non-inverting input terminal of the anode connection operational amplifier of the control power supply V1, the output end string of the operational amplifier Join the base stage that a resistance connects tested triode, provides threshold voltage for base stage, the inverting input terminal connection of the operational amplifier The emitter of tested triode, makes emitter voltage V1;It is connected to after the cathode series connection Constant Current Load of control power supply V1 The emitter of tested triode;
The anode of the power power-supply V2 uses collector of Kelvin's circuit connection to tested triode, the power power-supply The cathode of V2 is using the emitter for being connected to tested triode after Kelvin's circuit series connection Constant Current Load;
The working principle basic one of circuit is tested described in the working principle and embodiment one for testing circuit described in the present embodiment It causes, the voltage of control power supply V1 meets the minimum of Constant Current Load;Power power-supply V2 is connected using Kelvin's circuit It is connected to the collector and emitter of tested triode, therefore pressure drop is lower on its line, according to the voltage of tested transistor emitter For V1, the power voltage VCE=V2-V1 being applied on tested triode can be calculated;
The Constant Current Load is this test circuit configuration power current, and the constant current of circuit connection and above-described embodiment one is negative Carry identical, this will not be repeated here;
According to the power current that above-mentioned power voltage VCE and Constant Current Load are set, it can calculate in the present embodiment and be tested The transient thermal resistance power of triode.
Example IV
4th embodiment as shown in Figure 8, still by taking measured device is N-type triode as an example, transient thermal resistance test The design philosophy of circuit is consistent with test circuit theory described in embodiment two, and difference is measured device difference;
Control power supply V1 is used to be tested the power voltage value that triode sets its needs;Using Constant Current Load as tested Triode constant current source sets power current for tested triode;Power power-supply V2 is used to provide power for tested triode Driving voltage, driving Constant Current Load work are provided with for Constant Current Load;
The anode of the control power supply V1 connects the collector of tested triode, and cathode connects the same mutually defeated of operational amplifier Enter end, which connects the base stage of tested triode, and inverting input terminal connects the transmitting of tested triode Pole;
The anode of the power power-supply V2 connects the collector of tested triode, connects after cathode series connection Constant Current Load tested The emitter of triode;
In the present embodiment, control power supply V1 sets the power voltage that tested triode needs by the feedback of operational amplifier Value, i.e. power voltage VCE=V1;The voltage of power power-supply V2 needs to meet slightly larger than power voltage VCE (V1) to be tested three poles , must be so that Constant Current Load work, provide operating voltage for it while pipe provides power, wherein the size of the difference of V2-V1 is full The minimum of sufficient Constant Current Load;
The Constant Current Load is this test circuit configuration power current, and the constant current of circuit connection and above-described embodiment one is negative Carry identical, this will not be repeated here;
According to the power current that above-mentioned power voltage VCE (V1) and Constant Current Load are set, can calculate in the present embodiment The transient thermal resistance power of tested triode.
Embodiment five
5th embodiment as shown in Figure 9 corresponds to as shown in Figure 3 still by taking measured device is N-type triode as an example The prior art, provides another transient thermal resistance test circuit, and being distinguished as this test circuit and above-described embodiment does not use Operational amplifier is fed back, and physical circuit includes:
The anode for controlling power supply V1 connects the base stage of tested triode, drives the closing or opening of tested triode, the control The emitter that tested triode is connected after the cathode series connection Constant Current Load of power supply V1 processed controls power supply V1 according to its connection performance Voltage swing be Constant Current Load minimum and tested triode base stage and emitter between voltage summation;
The anode of the power power-supply V2 uses collector of Kelvin's circuit connection to tested triode, the power power-supply The cathode of V2 is using the emitter for being connected to tested triode after Kelvin's circuit series connection Constant Current Load;
The power voltage VCE=V2-V1+ of tested triode is tested the voltage between the base stage and emitter of triode, i.e., The operating voltage at VCE=V2- Constant Current Load both ends, power current are set by Constant Current Load, according to power voltage VCE and power electricity The transient thermal resistance power of tested triode can be calculated in stream.
Above-described embodiment all uses the field-effect tube of N-type or triode to carry out citing description, when test p-type field-effect tube or When triode, the principle of transient thermal resistance test circuit of the present invention is constant, it is only necessary to corresponding adjustment control power supply V1, power power-supply The positive-negative polarity of V2 and Constant Current Load.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention Within mind and principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.

Claims (8)

1. a kind of transient thermal resistance tests circuit, it is characterised in that: include:
Measured device is divided into a driving port and two working ports with working characteristics, and the driving port applies driving electricity Two working port conductings when pressure;The test circuit includes:
Constant Current Load, for setting constant current value, input terminal is connect with first working port of measured device;
Power power-supply, anode connect the second working port of the measured device, and cathode connects the defeated of the Constant Current Load Outlet;
Power supply, anode connection operational amplifier non-inverting input terminal are controlled, cathode connects the output end of the Constant Current Load;It is described The output end of operational amplifier connects the driving end of the measured device, and the inverting input terminal of operational amplifier connects measured device The first working port;The operational amplifier makes the control power supply output of the voltage at the first working port of measured device Voltage;
The voltage of the control power supply output is more than or equal to the minimum of driving Constant Current Load.
2. a kind of transient thermal resistance tests circuit characterized by comprising
Measured device is divided into a driving port and two working ports with working characteristics, and the driving port applies driving electricity Two working port conductings when pressure;The test circuit includes;
Constant Current Load, for setting constant current value, input terminal is connect with first working port of measured device;
Power power-supply, anode connect the second working port of the measured device, and cathode connects the defeated of the Constant Current Load Outlet;
Power supply is controlled, anode connects the second working port of the measured device, and cathode connects operational amplifier with mutually defeated Enter end;The output end of the operational amplifier connects the driving end of the measured device, and the inverting input terminal of operational amplifier connects Connect the first working port of measured device;The operational amplifier controls the voltage at the first working port of measured device The voltage of power supply output;
The difference of the voltage of the voltage and control power supply output of the power power-supply output is more than or equal to driving Constant Current Load most Small operating voltage.
3. a kind of transient thermal resistance tests circuit characterized by comprising
Measured device is divided into a driving port and two working ports with working characteristics, and the driving port applies driving electricity Two working port conductings when pressure;The test circuit includes;
Constant Current Load, for setting constant current value, input terminal is connect with first working port of measured device;
Power power-supply, anode connect the second working port of the measured device, and cathode connects the defeated of the Constant Current Load Outlet;
Power supply is controlled, anode connects the driving port of the measured device, and cathode connects the output end of the Constant Current Load;
The minimum and control power supply that the voltage of the control power supply output is more than or equal to driving Constant Current Load are described The sum of pressure drop on measured device.
4. circuit according to claim 1 or 3, which is characterized in that the anode of the power power-supply and the of measured device The connection of two working ports, and, the connection of the output end of the cathode and Constant Current Load of power power-supply is connected using Kelvin's circuit It connects;
Kelvin's circuit includes drive sub-circuits and sense sub-circuit.
5. according to claim 1,2 or 3 any circuit, which is characterized in that the Constant Current Load includes by metal-oxide-semiconductor, electricity The constant current load circuit that resistance, second operational amplifier are connected with difference amplifier;
The source electrode of the metal-oxide-semiconductor is connect with resistance one end, and the drain electrode of the metal-oxide-semiconductor and the resistance other end respectively correspond the constant current and bear The input of load, output end;
The non-inverting input terminal of the second operational amplifier connects an external power supply, and output end connects the grid of the metal-oxide-semiconductor, instead Phase input terminal connects the output end of the difference amplifier;
The non-inverting input terminal and inverting input terminal of the difference amplifier are connected to the both ends of the resistance, by the outside The voltage of power supply output carries out gain and is enlarged into resistance offer constant current voltage.
6. according to claim 1,2 or 3 any circuit, which is characterized in that the measured device includes N-type field-effect Pipe, the driving port of the measured device, the first and second working port are respectively grid, drain electrode and source electrode.
7. according to claim 1,2 or 3 any circuit, which is characterized in that the measured device includes triode, described The driving port of measured device, the first and second working port are respectively base stage, emitter and collector.
8. circuit according to claim 7, which is characterized in that a resistance of also connecting on the transistor base terminal circuit.
CN201910631328.6A 2019-07-12 2019-07-12 Transient thermal resistance test circuit Active CN110244211B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910631328.6A CN110244211B (en) 2019-07-12 2019-07-12 Transient thermal resistance test circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910631328.6A CN110244211B (en) 2019-07-12 2019-07-12 Transient thermal resistance test circuit

Publications (2)

Publication Number Publication Date
CN110244211A true CN110244211A (en) 2019-09-17
CN110244211B CN110244211B (en) 2024-04-30

Family

ID=67892068

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910631328.6A Active CN110244211B (en) 2019-07-12 2019-07-12 Transient thermal resistance test circuit

Country Status (1)

Country Link
CN (1) CN110244211B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110736909A (en) * 2019-10-18 2020-01-31 北京华峰测控技术股份有限公司 Semiconductor device package inspection method, computer device, and readable storage medium

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN85104182A (en) * 1985-05-28 1986-11-26 上海市轻工业研究所 The method of on-line measuring transistor and device
CN2039028U (en) * 1988-08-24 1989-06-07 浙江大学 Dynamic-characteristics tester for a thyristor
JPH05203698A (en) * 1992-01-27 1993-08-10 Oki Electric Ind Co Ltd Method for measuring heat resistance of mesfet
JPH0735813A (en) * 1993-07-22 1995-02-07 Omron Corp Heat resistance measuring apparatus
CN2720457Y (en) * 2004-07-19 2005-08-24 山东博特光电技术有限公司 Semiconductor laser characteristic parameter testing device
JP2006059856A (en) * 2004-08-17 2006-03-02 Nippon Telegr & Teleph Corp <Ntt> Device and method for evaluating thermal resistance of semiconductor laser
JP2010107432A (en) * 2008-10-31 2010-05-13 Fuji Electric Systems Co Ltd Method of integrated test of semiconductor and semiconductor testing device
US20110163771A1 (en) * 2008-06-26 2011-07-07 Advantest Corporation Test apparatus and driver circuit
JP2012225772A (en) * 2011-04-20 2012-11-15 Renesas Electronics Corp Semiconductor device inspection method and inspection device
CN103278758A (en) * 2013-04-19 2013-09-04 国家电网公司 Method and device for testing turn-off characteristics of high power thyristor
CN105572559A (en) * 2016-03-09 2016-05-11 西安后羿半导体科技有限公司 Power MOSFET packaging thermal resistance comparison device
CN107345996A (en) * 2017-07-11 2017-11-14 北京华峰测控技术有限公司 FET test circuit and method of testing
JP2019052855A (en) * 2017-09-12 2019-04-04 アイシン精機株式会社 Thermal resistance measuring apparatus and thermal resistance measuring method
CN109828193A (en) * 2019-01-28 2019-05-31 山西大学 A kind of device for the junction temperature calibration and radiating subassembly Performance Evaluation that bias current dynamic is constant
CN210442473U (en) * 2019-07-12 2020-05-01 北京华峰测控技术股份有限公司 Transient thermal resistance test circuit

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN85104182A (en) * 1985-05-28 1986-11-26 上海市轻工业研究所 The method of on-line measuring transistor and device
CN2039028U (en) * 1988-08-24 1989-06-07 浙江大学 Dynamic-characteristics tester for a thyristor
JPH05203698A (en) * 1992-01-27 1993-08-10 Oki Electric Ind Co Ltd Method for measuring heat resistance of mesfet
JPH0735813A (en) * 1993-07-22 1995-02-07 Omron Corp Heat resistance measuring apparatus
CN2720457Y (en) * 2004-07-19 2005-08-24 山东博特光电技术有限公司 Semiconductor laser characteristic parameter testing device
JP2006059856A (en) * 2004-08-17 2006-03-02 Nippon Telegr & Teleph Corp <Ntt> Device and method for evaluating thermal resistance of semiconductor laser
US20110163771A1 (en) * 2008-06-26 2011-07-07 Advantest Corporation Test apparatus and driver circuit
JP2010107432A (en) * 2008-10-31 2010-05-13 Fuji Electric Systems Co Ltd Method of integrated test of semiconductor and semiconductor testing device
JP2012225772A (en) * 2011-04-20 2012-11-15 Renesas Electronics Corp Semiconductor device inspection method and inspection device
CN103278758A (en) * 2013-04-19 2013-09-04 国家电网公司 Method and device for testing turn-off characteristics of high power thyristor
CN105572559A (en) * 2016-03-09 2016-05-11 西安后羿半导体科技有限公司 Power MOSFET packaging thermal resistance comparison device
CN107345996A (en) * 2017-07-11 2017-11-14 北京华峰测控技术有限公司 FET test circuit and method of testing
JP2019052855A (en) * 2017-09-12 2019-04-04 アイシン精機株式会社 Thermal resistance measuring apparatus and thermal resistance measuring method
CN109828193A (en) * 2019-01-28 2019-05-31 山西大学 A kind of device for the junction temperature calibration and radiating subassembly Performance Evaluation that bias current dynamic is constant
CN210442473U (en) * 2019-07-12 2020-05-01 北京华峰测控技术股份有限公司 Transient thermal resistance test circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110736909A (en) * 2019-10-18 2020-01-31 北京华峰测控技术股份有限公司 Semiconductor device package inspection method, computer device, and readable storage medium
CN110736909B (en) * 2019-10-18 2022-09-20 北京华峰测控技术股份有限公司 Semiconductor device package inspection method, computer device, and readable storage medium

Also Published As

Publication number Publication date
CN110244211B (en) 2024-04-30

Similar Documents

Publication Publication Date Title
US9712149B2 (en) Semiconductor device
TWI554860B (en) Reference compensation module and switching regular circuit comprising the same
CN109565271B (en) Integrated circuit for fast temperature sensing of semiconductor switching devices
CN109075782A (en) Junction temperature and current sense
TWI494732B (en) Hysteresis led driver with improved iled accuracy
CN105021967B (en) The precise measurement of voltage drop across thyristor
CN104297658B (en) Metal-oxide half field effect transistor thermo-resistance measurement plate
CN107345996A (en) FET test circuit and method of testing
WO2020135197A1 (en) Circuit for testing dynamic resistance of gallium nitride device
CN100547410C (en) Power tube current detection circuit
CN110419015A (en) Method and apparatus for using floating bandgap reference and temperature-compensating to carry out negative output voltage active-clamp
CN109752637A (en) For detecting the method and device of multi-chip parallel connection transient current unevenness
Li et al. Comparison between 1.7 kV SiC SJT and MOSFET power modules
CN111257718A (en) Device and method for measuring thermal resistance of MOSFET power module
CN108092498A (en) Over-temperature protection device, method and Switching Power Supply
CN110244211A (en) A kind of transient thermal resistance test circuit
CN103023004A (en) Surge suppression circuit
CN110176853A (en) Current sense device and associated method
US20130119883A1 (en) Buck converter and method for providing a current for at least one led
CN210442473U (en) Transient thermal resistance test circuit
Chen et al. System co-design of a 600V GaN FET power stage with integrated driver in a QFN system-in-package (QFN-SiP)
CN208623550U (en) A kind of switching-on and switching-off state detection circuit for ground wire BUCK type Switching Power Supply of floating
CN208656642U (en) A kind of voltage-dropping type DC_DC converter circuit
CN207184439U (en) It is a kind of can two-way admittance current limliting load switch
CN212586493U (en) Transient thermal resistance test circuit

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant