CN110221522B - Method for screening wetting solvent - Google Patents
Method for screening wetting solvent Download PDFInfo
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- CN110221522B CN110221522B CN201910462320.1A CN201910462320A CN110221522B CN 110221522 B CN110221522 B CN 110221522B CN 201910462320 A CN201910462320 A CN 201910462320A CN 110221522 B CN110221522 B CN 110221522B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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Abstract
The invention provides a screening method of a wetting solvent. The method comprises selecting m solvents to coat m groups of wafers; coating n kinds of first photoresist with preset dosage on the wetting layers of the n wafers to form a photoresist layer so as to form a coating film; screening the rubber coating sheets according to screening conditions, and screening a rubber coating sheet set meeting the screening conditions; and screening the gummed sheet set according to the preset dosage of the first photoresist, so as to screen out the gummed sheet with the minimum preset dosage of the first photoresist as the selected gummed sheet, and using the solvent for coating the selected gummed sheet as the selected wetting solvent applicable to the first photoresist. The invention effectively improves the photoresist coating condition on the surface of the wafer and improves the thickness uniformity of the photoresist layer of the photoresist coated sheet by screening the wetting solvent for coating and wetting the wafer before coating the photoresist.
Description
The application is a divisional application of a Chinese patent application with the application number of '201810173987.5', which is applied in 3, month and 2 of 2018 and is named as 'photoresist coating process, wetting solvent screening method and wetting solvent'.
Technical Field
The invention relates to photoresist coating in an integrated circuit yellow light manufacturing process, in particular to a method for screening a wetting solvent.
Background
With the increasing demand for the quality of integrated circuits, it is important to maintain the uniformity of the thickness of the photoresist layer formed by photoresist and to reduce the amount of photoresist used in the coating process in the photoresist coating process of the photolithography process in which the wafer size is 8 inches or more. Generally, a large amount of photoresist is used for coating photoresist, and the uniformity of coating photoresist is poor, which affects the quality of integrated circuits.
Disclosure of Invention
The present invention provides a method for screening a wetting solvent, which solves at least the above technical problems of the prior art.
In order to achieve the above object, the present invention provides a photoresist coating process, comprising:
providing a wafer to be coated;
titrating a wetting solvent on the surface to be coated of the wafer, and spin-coating the wetting solvent for pre-wetting to form a wetting layer; and
spin-coating a photoresist on the surface of the wetting layer to form a photoresist layer;
wherein the contact angle between a liquid bead formed by titrating the wetting solvent on the surface to be coated and the surface to be coated is less than 90 degrees; the dispersion parameter of the Hansen solubility parameter of the wetting solvent is between 17.8 and 19MPa 1/2 The polarity parameter is between 4.1 and 16.7MPa 1/2 Hydrogen bond parameter is between 5.1 and 7.4MPa 1/2 。`
In one embodiment, the absolute value of the difference between the maximum and minimum thickness of the photoresist layer and the average thickness of the photoresist layer is less than 5% of the average thickness of the photoresist layer.
As one possible embodiment, the spin-coating of the wetting solvent is performed at a rotation speed greater than a main rotation speed of the spin-coating of the photoresist.
As an implementable mode, the photoresist remaining on the surface of the wetting layer in the step of spin-coating the photoresist on the surface of the wetting layer to form a photoresist layer is not less than 30% to 50% of the titration amount of the photoresist.
As an example, the wafer may include 8 "and more than 8";
before the surface to be coated of the wafer titrates the wetting solvent, the method further comprises the following steps:
and coating hexamethyldisilazane on the surface of the wafer.
As an embodiment, the wetting solvent comprises cyclohexanone and/or a cyclohexanone derivative.
In order to achieve the above object, the present invention provides a method for screening a wetting solvent, comprising:
coating m groups of wafers by m solvents, and coating one group of wafers by one solvent to form a wetting layer;
respectively coating a first photoresist on the wetting layers of n wafers to form a photoresist layer, wherein the preset dosage of the first photoresist is n, and each wafer is coated with a preset dosage of the first photoresist to form n photoresist pieces;
screening the rubber coating sheets according to screening conditions to establish a rubber coating sheet set; and
and screening the film coating set to screen out the film coating piece with the minimum preset dosage of the first photoresist, wherein the solvent adopted by the film coating piece with the minimum preset dosage of the first photoresist is used as a wetting solvent suitable for the first photoresist, and m and n are integers more than or equal to 2.
As an embodiment, the m solvents have a solubility in the first photoresist greater than a predetermined solubility.
As an implementation mode, the solubility of the m solvents in the first photoresist is judged according to Hansen solubility parameters.
As an embodiment, the step of spin-coating the first photoresist on the wetting layer of the wafer to form a photoresist layer comprises: rotating the wafer at a rotation speed of 300-1000 rpm to spin-coat the first photoresist, rotating the wafer at a set main rotation speed of 800-2500 rpm and removing the first photoresist from the edge of the wafer.
As an alternative, the spin coating of the selected solvent is carried out at a spin speed greater than the spin speed prevailing for the spin coating of the first photoresist.
As an embodiment, the step of screening the coated film according to the screening condition comprises:
selecting a plurality of test points on the photoresist layer of the film coating;
measuring the height of each test point to calculate the average height of the photoresist layer; and
and measuring the position of each test point through a film thickness detector to form a photoresist layer three-dimensional image so as to detect the film thickness uniformity of the photoresist layer, and screening out the glue coating sheet with the average height within a preset height range and the film thickness uniformity within a preset uniformity range as the glue coating sheet set.
As an implementation manner, the step of screening the coated film according to the screening condition includes:
and observing the surface of the photoresist layer of the coating piece by using a microscopic instrument to screen out the coating piece without damaging the surface of the photoresist layer as the coating piece set.
As an implementation manner, before the step of coating the m groups of wafers with the m solvents, the method further includes screening the m solvents:
titrating all solvents to be screened on the wafer to form liquid beads on the wafer;
measuring the angles of contact angles between liquid beads of all the solvents to be screened and the wafer;
and screening the m solvents according to the angle of the contact angle, wherein the angle of the contact angle of the liquid bead of each of the m solvents and the wafer is less than 90 degrees.
As an embodiment, the screening method further comprises:
selecting a second photoresist and a third photoresist of k photoresists, \ 8230, and selecting a suitable wetting solvent for each photoresist by adopting the screening method to form a wetting solvent set;
and screening out the wetting solvents which are simultaneously suitable for the k photoresists from the wetting solvent collection.
To achieve the above object, the present invention provides a use of a solvent comprising cyclohexanone and/or a cyclohexanone derivative as a coating wetting for a wafer before coating a photoresist.
As an implementable embodiment, the solvent comprising cyclohexanone and/or cyclohexanone derivatives is suitable for pre-coating wetting of the wafer in ArF dry lithography and ArF immersion lithography;
wherein the ArF dry lithography method is a method of performing dry lithography using an argon fluoride excimer laser, and the ArF immersion lithography method is a method of performing immersion lithography using an argon fluoride excimer laser.
In order to achieve the purpose, the invention provides a wetting solvent which is used for coating and wetting a wafer before coating a photoresist, wherein the wetting solvent titrates that the contact angle between a liquid bead formed on the surface to be coated of the wafer and the surface to be coated of the wafer is less than 90 degrees; the dispersion parameter of the Hansen solubility parameter of the wetting solvent is between 17.8 and 19MPa 1/2 The polarity parameter is between 4.1 and 16.7MPa 1/2 Hydrogen bond parameter is between 5.1 and 7.4MPa 1/2 。
As an implementation manner, when the wetting solvent is titrated on the surface to be coated of the wafer, and the wetting solvent is coated in a spinning mode, pre-wetting is carried out to form a wetting layer; and spin-coating the photoresist on the surface of the wetting layer to form a photoresist layer, wherein absolute values of differences between maximum and minimum thicknesses of the photoresist layer and the average thickness of the photoresist layer are less than 5% of the average thickness of the photoresist layer.
As an embodiment, the wetting solvent comprises cyclohexanone and/or a cyclohexanone derivative.
The invention effectively improves the coating condition of the photoresist on the surface of the wafer and improves the thickness uniformity of the photoresist layer of the photoresist coating sheet by using the solvent containing cyclohexanone and/or cyclohexanone derivatives as a wetting solvent for coating and wetting the wafer before coating the photoresist, and simultaneously reduces the dosage of the photoresist and the cost on the premise that the average thickness and the thickness uniformity of the photoresist layer of the photoresist coating sheet meet the requirements.
The foregoing summary is provided for the purpose of description only and is not intended to be limiting in any way. In addition to the illustrative aspects, embodiments, and features described above, further aspects, embodiments, and features of the present invention will be readily apparent by reference to the drawings and following detailed description.
Drawings
In the drawings, like reference numerals refer to the same or similar parts or elements throughout the several views unless otherwise specified. The figures are not necessarily to scale. It is appreciated that these drawings depict only some embodiments in accordance with the disclosure and are therefore not to be considered limiting of its scope.
FIG. 1 is a flow chart of a photoresist coating process in an embodiment of the present invention;
FIG. 2 is a schematic diagram of a contact angle between a bead and a wafer during titration of a wetting solvent in an embodiment of the present invention;
FIG. 3 is a flow chart of a solvent screening method for wetting a wafer prior to photoresist application in an embodiment of the present invention.
Reference numerals:
110 the beads of the solvent are wetted,
120 of the wafer, and the wafer is,
the theta contact angle.
Detailed Description
In the following, only certain exemplary embodiments are briefly described. As those skilled in the art will recognize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. Accordingly, the drawings and description are to be regarded as illustrative in nature, and not as restrictive.
Example one
This embodiment provides a process for photoresist coating, as shown in FIG. 1, the process comprising:
step S11: providing a wafer to be coated;
step S12: titrating a wetting solvent on the surface to be coated of the wafer, and spin-coating the wetting solvent for pre-wetting to form a wetting layer;
step S13: and spin-coating photoresist on the surface of the wetting layer to form a photoresist layer.
Referring to fig. 2, a contact angle between the wetting solvent bead 110 titrated on the surface to be coated of the wafer 120 and the surface to be coated of the wafer 120 is θ, the contact angle θ is measured, and a contact angle between the wetting solvent bead 110 titrated on the surface to be coated and the surface to be coated of the wafer 120 is less than 90 deg., i.e. theta<90 degrees; the dispersion parameter of the Hansen solubility parameter of the wetting solvent is between 17.8 and 19MPa 1/2 The polarity parameter is between 4.1 and 16.7MPa 1/2 Hydrogen bond parameter is between 5.1 and 7.4MPa 1/2 (ii) a The absolute value of the difference between the maximum and minimum of the photoresist layer thickness and the average photoresist layer thickness is less than 5% of the average photoresist layer thickness.
The applicable range of the photoresist coating process of this embodiment includes the photoresist coating process in the yellow light process with a wafer size of 8 inches or more, but is not limited to the photoresist coating process in the yellow light process with a wafer size of 8 inches or more.
Wherein the wetting solvent comprises cyclohexanone and/or a cyclohexanone derivative is a preferred wetting solvent, but is not limited to solvents comprising cyclohexanone and/or a cyclohexanone derivative.
In one example, spin coating a photoresist on a surface of the wetting layer to form a photoresist layer comprises the steps of:
titrating the photoresist on the surface of the wetting layer;
rotating the wafer to spin coat the photoresist;
carrying out reflux treatment on the photoresist on the wafer;
rotating the wafer at a set main rotating speed and removing the photoresist on the edge of the wafer;
cleaning one surface of the wafer, which is opposite to the surface to be coated;
and rotating the wafer to dry the photoresist of the wafer to form the photoresist layer.
Through the above steps, a photoresist layer may be formed.
The requirements of each step of the photoresist coating process are as follows:
in the step of rotating the wafer to spin-coat the photoresist, the rotation speed of the wafer is 300-1000 r/min; the main rotating speed is 800-2500 rpm, the rotating speed of the spin-coating wetting solvent in the step of spin-coating the wetting solvent for prewetting to form the wetting layer is greater than the main rotating speed of the spin-coating photoresist, and the photoresist layer thickness is formed and is related to the rotating speed during coating.
And rotating the wafer to spin-coat the photoresist, wherein the photoresist remained on the surface of the upper wetting layer of the wafer is not less than 30-50% of the dripping amount of the photoresist during the spin-coating of the photoresist.
In one example, the photoresist includes an acrylic resin.
The wafer comprises 8 inches and above 8 inches, and the surface of the wafer is coated with Hexamethyldisilazane (HMDS) before the wetting solvent is titrated so as to increase the hydrophobicity of the surface of the wafer and further enhance the adhesion of the photoresist to the surface of the wafer.
In the process for coating photoresist of this embodiment, the wetting solvent used in the process titrates the contact angle between the liquid bead formed on the surface to be coated and the surface to be coated to be less than 90 °, so that the wetting solvent has the function of wetting the wafer, and the dispersion parameter of the hansen solubility parameter of the selected wetting solvent is 17.8 to 19MPa 1/2 The polarity parameter is 4.1-16.7 MPa 1 /2 Hydrogen bond parameter is 5.1-7.4 MPa 1/2 (including boundary value), the wetting solvent which accords with the Hansen solubility parameter has good solubility for various photoresists, photoresist coating is carried out on the wafer after prewetting, and a good photoresist coating state can be obtained for various photoresists, so that the photoresist layer has high uniformity, the production requirement is met, and meanwhile, the dosage of the photoresist is small. Meanwhile, the absolute value of the difference between the maximum and minimum thickness of the photoresist layer and the average thickness of the photoresist layer is less than 5% of the average thickness of the photoresist layer, i.e. the photoresist layer has high thickness uniformity.
Example two
The present embodiment provides a method for screening a wetting solvent for wetting a wafer before coating a photoresist, as shown in the flow chart of fig. 3, comprising:
step S21: coating m groups of wafers by m solvents, and coating one group of wafers by one solvent to form a wetting layer of the wafers, wherein each group of wafers comprises n wafers, and m and n are positive integers more than or equal to 2;
step S22: coating n kinds of first photoresist with preset dosage on the wetting layers of the n wafers to form a photoresist layer of the wafer so as to form a glue coating piece, wherein in each group of wafers, one wafer is coated with one kind of first photoresist with preset dosage so as to form n kinds of glue coating pieces;
step S23: screening the rubber coating sheets according to screening conditions, and screening rubber coating sheet sets meeting the screening conditions;
step S24: and screening the photoresist coating set according to the preset dosage of the first photoresist, so as to screen out the photoresist coating sheet with the minimum preset dosage of the first photoresist as a selected photoresist coating sheet, and using the solvent for coating the selected photoresist coating sheet as a selected wetting solvent suitable for the first photoresist.
The wetting solvent screened by the screening method of the embodiment not only meets the screening requirement of the coated film, but also has the minimum preset dosage of the photoresist, namely the minimum preset dosage of the photoresist on the premise of ensuring that the coated film is in a preset range. The selected wetting solvent is used as the solvent for wetting the wafer before coating the photoresist, so that the photoresist is uniformly mixed with the wetting solvent on the contact surface when coated later, the coating uniformity of the photoresist is improved, the thickness uniformity of the photoresist layer formed by the photoresist is further improved, the dosage of the photoresist is reduced on the premise of ensuring that the photoresist layer meets the requirement of uniformity, and the cost is reduced.
In order to screen out the rubber coating sheets meeting the requirements, the step of screening the rubber coating sheets according to the screening conditions comprises the following steps:
selecting a plurality of test points on a photoresist layer of the glue coating sheet;
measuring the height of each test point to calculate the average height of the photoresist layer; and
and measuring the position of each test point through a film thickness detector to form a photoresist layer three-dimensional image so as to detect the film thickness uniformity of the photoresist layer, and screening out the gluing sheets with the average height within a preset height range and the film thickness uniformity within a preset uniformity range to serve as the gluing sheet set.
The step of screening the coated film according to the screening condition comprises the following steps:
and observing the surface of the photoresist layer of the photoresist coating sheet by using a microscope instrument to screen out the photoresist coating sheet without damage on the surface of the photoresist layer as the photoresist coating sheet set.
The screening condition not only requires that the surface of the photoresist layer of the photoresist coating sheet is not damaged, but also requires that the average film thickness of the photoresist layer of the photoresist coating sheet and the film thickness uniformity of the photoresist layer meet the preset standard range. The wetting solvent screened out in this way not only enables the average thickness of the photoresist layer of the photoresist coating film to reach a preset thickness range, but also enables the uniformity of the thickness of the photoresist layer to reach a preset uniformity range, and simultaneously, the preset dosage of the photoresist is the minimum. On the premise of ensuring that the average thickness and the thickness uniformity of the photoresist layer meet the requirements, the dosage of the photoresist is reduced, and the cost is reduced.
In one example, m groups of wafers are coated with m solvents in step S21, and a group of wafers is coated with one solvent to form a wetting layer, the amount of solvent used to coat one of the wafers per solvent being the same.
In one example, in the step S21, m kinds of solvents are used to coat m groups of wafers, and in the step of forming a wetting layer by coating one group of wafers with one kind of solvent, each kind of solvent coats the wafers in the same coating environment and in the same coating manner;
in step S22, n predetermined amounts of the first photoresist are coated on the wetting layers of n wafers to form a photoresist layer, and the first photoresist is coated in the same manner and in the same coating environment.
In one specific example, 5 solvents to be tested were selected: the method comprises the following steps of A, B, C, D and E solvents, wherein 5 solvents to be detected are used for coating five groups of wafers to form a wetting layer, the A solvent coats a first group of wafers, the B solvent coats a second group of wafers, the C solvent coats a third group of wafers, the D solvent coats a fourth group of wafers, the E solvent coats a fifth group of wafers, and each group of wafers comprises 6 wafers.
The wetting layer of the first group of 6 wafers is coated with 0.90ml, 0.80ml, 0.70ml, 0.65ml, 0.60ml and 0.55ml of photoresist in a one-to-one correspondence manner to form a photoresist layer, and the second group of wafers to the fifth group of wafers are coated with the photoresist layer in the manner described above to form a coating film.
Measuring the average thickness of the photoresist layer of each of the 30 film coatings formed by the five groups of wafers and the uniformity of the thickness of the photoresist layer; the measurement method can be to use a film thickness detection system to carry out measurement.
Visual inspection of the photoresist layer uniformity for each of the 30 filmed pieces formed from the five groups of wafers included the use of a magnifying instrument to observe the topography of the filmed photoresist layer to obtain the photoresist layer uniformity.
Arranging each group of measurement results in a descending order according to the preset dosage of the photoresist, specifically as shown in the following table 1; here, "√" in table 1 indicates that the uniformity of the visual inspection of the photoresist layer and the uniformity of the average thickness of the photoresist layer and the thickness of the photoresist layer measured by the film thickness detection system both passed, "+/-indicates that the visual inspection passed but the average thickness of the photoresist layer and the uniformity of the thickness of the photoresist layer measured by the film thickness detection system did not pass, and" gam "indicates that the average thickness of the photoresist layer and the uniformity of the thickness of the photoresist layer measured by the visual inspection and the film thickness detection system did not pass.
TABLE 1
Screening was performed according to table 1 under the following conditions: the smaller the preset amount for coating the photoresist to achieve "√" is, the better the solubility of the solvent is, and the smaller the preset amount for coating the photoresist to achieve "+" is, the better;
according to the above screening conditions, the solvent is selected to have the best solubility and thus to be a wetting solvent for wetting the wafer before coating the photoresist.
In the embodiment, the solvent D is used as the wetting solvent for wetting the wafer before coating the photoresist, so that the wetting solvent is uniformly mixed with the wafer at the contact surface when the photoresist is coated later, the coating uniformity of the photoresist is improved, and the thickness uniformity of the photoresist layer of the photoresist coating piece formed by the photoresist is further improved.
In one example, a second photoresist, a third photoresist, \8230, of k photoresists is selected according to the screening method, and the screening method of any one of the examples is adopted for each photoresist to screen out applicable wetting solvents so as to form wetting solvent sets;
screening out wetting solvents simultaneously suitable for k photoresists from the wetting solvent set;
selecting k photoresist agents to coat n preset dosage on the wetting layers of n wafers to form a photoresist layer so as to form a coated piece, screening the coated piece according to screening conditions, and selecting a wetting solvent so as to form a wetting solvent database so as to screen the wetting solvent suitable for the multiple photoresist agents; wherein, the wetting solvents screened by using different photoresists may be the same or different, and after a wetting solvent database is formed, the wetting solvents are selected according to two standards of large applicable quantity and good effect.
The measurement of the average film thickness and the uniformity of the thickness of the photoresist layer of the film coating comprises the measurement by adopting a film thickness detection system, and the specific steps comprise: selecting a plurality of test points on a photoresist layer of a coating film, measuring the height of each test point by using a film thickness detection system, obtaining the average thickness of the photoresist layer of the coating film by calculating the average height of all the test points, and obtaining the thickness uniformity of the photoresist layer of the coating film by carrying out three-dimensional imaging on each test point, thereby screening the solubility of a solvent by comparing the average thickness and the film thickness uniformity measured by the photoresist layer of each coating film, wherein the solvent with the best solubility is the solvent with the best average thickness and the best thickness uniformity.
In the case that there are many types of all the solvents to be screened, in order to shorten the screening time, the preliminary screening may be performed before the step of coating m types of solvents on m groups of wafers in step S21, and coating only one group of wafers with one solvent to form the wetting layer, that is, the method may further include the following steps:
titrating all solvents to be screened onto the wafers, each of the solvents forming a bead of the solvent on the wafer;
measuring the angles of contact angles between the liquid beads of all the solvents to be screened and the wafer;
screening the solvent according to the angle of the contact angle between the solvent liquid bead and the wafer, and screening out the solvent of which the angle of the contact angle between the solvent liquid bead and the wafer is smaller than a preset angle; the preset angle is smaller than 90 degrees, for example, 45 degrees can be selected as the preset angle.
When the angle of the contact angle is equal to 0 degrees, the solvent completely wets the wafer; when the angle of the contact angle is smaller than 90 degrees, the solvent wets or partially wets the wafer; when the angle of the contact angle is greater than 90 °, the solvent does not wet the wafer. Therefore, the solvent which wets the wafer is screened firstly for subsequent screening, the screening range can be narrowed, and the screening time is saved.
In order to shorten the screening time, the preliminary screening may be performed before the step of coating m groups of wafers with m solvents, and coating only one group of wafers with one solvent to form a wetting layer, and the method may further include the following steps:
the solubility of all solvents to be screened in the photoresist is judged according to Hansen (Hansen) solubility parameters, the solvents with the solubility of the solvents for dissolving the photoresist being larger than the preset solubility are screened, wherein the solvents to be screened comprise photoresist solvents and/or organic solvents with components similar to the components of the photoresist solvents, the solvents to be screened are the same as or have similar components to the photoresist solvents, and the photoresist coating is ensured not to be doped with other elements, so that the photoetching development quality is ensured.
The method for judging the solubility of all solvents to be screened in the photoresist according to the Hansen solubility parameters is to place the photoresist and the melt thereof in a space with D, P and H as three-dimensional coordinates, and draw a sphere with the radius of the interaction of the photoresist as the center, wherein D represents a dispersion parameter, P represents a polarity parameter, H represents a hydrogen bond parameter and R represents the radius of the interaction. If the location of the solvent is within the sphere, the photoresist can be dissolved in this solvent. The extent of dissolution can be quantitatively described by the Ratio (RED), it is clear that RED ≦ 1, soluble; the smaller the RED, the higher the solubility. Based on the theory, all the solvents to be screened are primarily screened, so that the screening range can be narrowed, and the screening time is saved.
EXAMPLE III
The present example provides the use of a solvent comprising cyclohexanone and/or cyclohexanone derivatives as a coating wetting for wafers prior to coating photoresist.
In the embodiment, the solvent comprising cyclohexanone and/or cyclohexanone derivatives is used as the wetting solvent for coating and wetting the wafer before coating the photoresist, so that the wetting solvent is uniformly mixed with the wetting solvent on the contact surface when the photoresist is coated later, the coating uniformity of the photoresist is improved, and the thickness uniformity of the photoresist layer formed by the photoresist is further improved.
The scope to which the use of a solvent comprising cyclohexanone and/or a cyclohexanone derivative as a coating wetting for a wafer before coating a photoresist can be applied includes application to a coating wetting for the wafer in ArF dry lithography and ArF immersion lithography; the ArF dry lithography method is a method of performing dry lithography using an argon fluoride (argon fluoride having a wavelength of 193 nm) excimer laser, and the ArF immersion lithography method is a method of performing immersion lithography using an argon fluoride excimer laser.
In one example, the photoresist comprises an acrylic resin.
In one example, the wafers include 8 inch and greater than 8 inch wafers with the wafer surface coated with hexamethyldisilazane for increasing the hydrophobicity of the wafer surface.
The present invention significantly improves the uniformity of the thickness of a photoresist layer formed by photoresist coating while reducing the amount of photoresist used, by using a solvent comprising cyclohexanone and/or a cyclohexanone derivative as a wetting solvent, particularly for an ArF type photoresist in use, such as an acrylic resin, which is an ArF type photoresist.
Example four
This embodiment provides a wetting solvent for wetting the wafer before applying photoresistAs shown in fig. 2, a contact angle between a wetting solvent bead 110 formed on a surface to be coated of a wafer 120 by the titration of the wetting solvent and the surface to be coated of the wafer 120 is less than 90 °, wherein the contact angle is represented by θ; the dispersion parameter of the Hansen solubility parameter of the wetting solvent is between 17.8 and 19MPa 1/2 The polarity parameter is between 4.1 and 16.7MPa 1/2 Hydrogen bond parameter is between 5.1 and 7.4MPa 1/2 The wetting solvent which accords with the Hansen solubility parameter has good solubility for various photoresists, and photoresist coating is carried out on a wafer after prewetting, so that a good photoresist coating state can be obtained for various photoresists, the photoresist layer has high uniformity, the production requirement is met, and meanwhile, the dosage of the photoresist is small.
In one example, when a wetting solvent is titrated on the surface to be coated of the wafer, and the wetting solvent is spin-coated for pre-wetting to form a wetting layer; and spin-coating photoresist on the surface of the wetting layer to form a photoresist layer, wherein the absolute value of the difference between the maximum value and the minimum value of the thickness of the photoresist layer and the average thickness of the photoresist layer is less than 5% of the average thickness of the photoresist layer.
In one example, the wetting solvent comprises cyclohexanone and/or a cyclohexanone derivative.
The wetting solvent comprises cyclohexanone and/or cyclohexanone derivatives, particularly for the applied ArF photoresist, such as acrylic resin which is an ArF photoresist, the absolute values of the difference between the maximum value and the minimum value of the thickness of the formed photoresist layer and the average thickness of the formed photoresist layer are less than 5 percent of the average thickness of the photoresist layer, the uniformity of the thickness of the photoresist layer formed by coating the photoresist is obviously improved, and the dosage of the photoresist is reduced.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; the connection can be mechanical connection, electrical connection or communication; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless expressly stated or limited otherwise, the recitation of a first feature "on" or "under" a second feature may include the recitation of the first and second features being in direct contact, and may also include the recitation that the first and second features are not in direct contact, but are in contact via another feature between them. Also, the first feature being "on," "square," and "over" the second feature includes the first feature being directly above and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. The first feature being "under," "beneath," and "under" the second feature includes the first feature being directly above and obliquely above the second feature, or simply meaning that the first feature is at a lesser level than the second feature.
The above disclosure provides many different embodiments, or examples, for implementing different features of the invention. The components and arrangements of the specific examples are described above to simplify the present disclosure. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize applications of other processes and/or uses of other materials.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive various changes or substitutions within the technical scope of the present invention, and these should be covered by the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
1. A method of screening a wetting solvent, comprising:
coating m groups of wafers by m solvents, and coating one group of wafers by one solvent to form a wetting layer of the wafers, wherein each group of wafers comprises n wafers;
respectively coating a first photoresist on the wetting layers of n wafers to form photoresist layers, wherein the preset dosage of the first photoresist is n, and each wafer is coated with a preset dosage of the first photoresist to form n gummed sheets;
screening the film coating sheet according to screening conditions to establish a film coating sheet set, wherein the screening conditions comprise that the average height of the film coating sheet in the film coating sheet set is within a preset height range, and the absolute values of the differences between the maximum value and the minimum value of the thickness of the light resistance layer and the average thickness of the light resistance layer are less than 5% of the average thickness of the light resistance layer; and
and screening the film coating set to screen out the film coating piece with the minimum preset dosage of the first photoresist, wherein the solvent adopted by the film coating piece with the minimum preset dosage of the first photoresist is used as a wetting solvent suitable for the first photoresist, and m and n are integers more than or equal to 2.
2. The screening method according to claim 1, wherein the m solvents have a solubility in the first photoresist greater than a predetermined solubility.
3. A screening method according to claim 2, wherein the solubility of said m solvents in said first photoresist is judged according to hansen solubility parameters.
4. The screening method of claim 1, wherein coating the wafer to form the wetting layer comprises:
and titrating the selected solvent on the surface to be coated of the wafer, and carrying out pre-wetting by spin coating on the selected solvent to form a wetting layer.
5. A screening method according to claim 4, wherein the step of spin coating said first photoresist on said wetting layer of said wafer to form a photoresist layer comprises: rotating the wafer at a rotation speed of 300-1000 rpm to spin-coat the first photoresist, rotating the wafer at a set main rotation speed of 800-2500 rpm and removing the first photoresist from the edge of the wafer.
6. A screening method according to claim 5 wherein the spin coating of said selected solvent is performed at a spin speed greater than the spin speed of said first photoresist.
7. The screening method according to claim 1, wherein the step of screening the smear sheet according to a screening condition comprises:
selecting a plurality of test points on the photoresist layer of the film coating;
measuring the height of each test point to calculate the average height of the photoresist layer; and
and measuring the position of each test point through a film thickness detector to form a photoresist layer three-dimensional image so as to detect the film thickness uniformity of the photoresist layer, and screening out the gluing sheet with the average height within a preset height range and the film thickness uniformity within a preset uniformity range as the gluing sheet set.
8. The screening method according to claim 1, wherein the step of screening the smear sheet according to a screening condition comprises:
and observing the surface of the photoresist layer of the coating piece by using a microscopic instrument to screen out the coating piece without damaging the surface of the photoresist layer as the coating piece set.
9. The screening method of claim 1, further comprising, prior to the step of coating the m groups of wafers with the m solvents, screening the m solvents by:
titrating all solvents to be screened on the wafer to form liquid beads on the wafer;
measuring the angles of contact angles between all liquid beads of the solvent to be screened and the wafer;
and screening the m solvents according to the angles of the contact angles, wherein the angle of the contact angle of the liquid bead of each of the m solvents and the wafer is smaller than 90 degrees.
10. The screening method according to any one of claims 1 to 9, further comprising:
selecting a second photoresist and a third photoresist in the k photoresists, wherein the third photoresist is 8230, and the k photoresist is screened out the applicable wetting solvent by adopting the screening method for each photoresist to form a wetting solvent set;
and screening out the wetting solvents which are simultaneously suitable for the k photoresists from the wetting solvent collection.
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| CN201910462320.1A CN110221522B (en) | 2018-03-02 | 2018-03-02 | Method for screening wetting solvent |
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| EP2397232A1 (en) * | 2010-06-18 | 2011-12-21 | Tokyo Electron Limited | Coating method and coating apparatus |
| CN104969129A (en) * | 2013-02-08 | 2015-10-07 | 东进世美肯株式会社 | Thinner composition and use thereof |
| CN105093828A (en) * | 2014-05-09 | 2015-11-25 | 太阳油墨制造株式会社 | Curable resin composition, dry film and printed circuit board |
| CN108345176A (en) * | 2018-03-02 | 2018-07-31 | 睿力集成电路有限公司 | Photoresist coating process, wetting solvents screening technique and wetting solvents |
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| JP4381143B2 (en) * | 2001-11-15 | 2009-12-09 | ハネウェル・インターナショナル・インコーポレーテッド | Spin-on antireflection coating for photolithography |
| CN100459057C (en) * | 2006-05-22 | 2009-02-04 | 中芯国际集成电路制造(上海)有限公司 | Cleaning method of crystal column surface |
| JP6240404B2 (en) * | 2013-05-09 | 2017-11-29 | アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ | Rinsing liquid for lithography and pattern forming method using the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP2397232A1 (en) * | 2010-06-18 | 2011-12-21 | Tokyo Electron Limited | Coating method and coating apparatus |
| CN104969129A (en) * | 2013-02-08 | 2015-10-07 | 东进世美肯株式会社 | Thinner composition and use thereof |
| CN105093828A (en) * | 2014-05-09 | 2015-11-25 | 太阳油墨制造株式会社 | Curable resin composition, dry film and printed circuit board |
| CN108345176A (en) * | 2018-03-02 | 2018-07-31 | 睿力集成电路有限公司 | Photoresist coating process, wetting solvents screening technique and wetting solvents |
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