CN110216389A - A kind of laser processing and system of wafer - Google Patents
A kind of laser processing and system of wafer Download PDFInfo
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- CN110216389A CN110216389A CN201910585540.3A CN201910585540A CN110216389A CN 110216389 A CN110216389 A CN 110216389A CN 201910585540 A CN201910585540 A CN 201910585540A CN 110216389 A CN110216389 A CN 110216389A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
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Abstract
The present invention relates to wafer manufacture fields, and in particular to a kind of laser processing and system of wafer.It is preset with the cutting track of wafer, the laser processing carries out modification processing comprising steps of being incident on inside wafer from wafer upper surface along cutting track by laser, forms at least one layer of modification layer；Cutting-up operation is carried out in wafer upper surface along cutting track by laser again, generates the crackle extended downwardly from upper surface；Sliver operation is carried out to wafer, is separated into multiple crystal grain.The present invention by designing the laser processing and system of a kind of wafer, can or Cutting Road functional areas narrower in Cutting Road in the case where be coated with film layer, avoid the problem that obvious chipping is generated in Slicing procedure even damages crystal grain, to promote fragment yield and efficiency.Meanwhile even if not being in the case that Cutting Road is narrower or Cutting Road functional areas are coated with film layer, this programme can still promote the yield and efficiency of wafer fragment.
Description
Technical field
The present invention relates to wafer manufacture fields, and in particular to a kind of laser processing and system of wafer.
Background technique
In fabrication of semiconductor device, stacking insulating film is utilized on the surface of the substrates such as silicon (Si), silicon carbide (SiC)
With functional layer made of functional membrane, along clathrate arrangement Cutting Road (segmentation preset lines) to be formed with the region of optical device into
Row divides, and wafer is cut off, thus by the device of the semiconductor wafers such as multiple IC (integrated circuit), LSI (large scale integrated circuit)
Part be divided into it is rectangular, to produce semiconductor chip one by one.
In current manufacture, Wafer Dicing generallys use three kinds of methods:
1, one is traditional machine cuts.Machine cuts mainly grind wafer using the mechanical stress of diamond
The problems such as cutting, concentrating release and stage property to wear there are mechanically deform, stress, waste water will also result in dust pollution, while also recruit
Cause additional cleaning and polishing step.With the gradually promotion of chip integration and performance requirement, machine cuts can not meet crystalline substance
The quality requirements of circle scribing.
2, one is high pressure waterjet modes, and high pressure waterjet width is big, are not suitable for the narrower wafer processing of Cutting Road, processing essence
It spends low；And need a large amount of water husky, production environment is polluted big.
3, one is the contactless processing of laser, so that wafer is cut by cutting-up track, are finally reached unit wafer point
From effect.However, the fuel factor of some laser processing modes is easy to produce largely in the mode of current laser processing wafer
Melting residue, Cutting Road edge accumulate, influence the service performance of wafer, cause the reduction of device strength；Meanwhile it melting
The wafer inner wall that residue is attached to after cutting can also seriously affect it and expand UF membrane, cause cut quality bad.Some laser add
Wafer can be divided into little crystal grain one by one, but or Cutting Road narrower for Cutting Road based on relatively narrow Cutting Road by work mode
Functional areas are coated with the wafer of film layer, there is a problem of what laser light incident was limited, have and generate the risk that obvious chipping even damages crystal grain,
Influence the yield and efficiency of fragment.
Based on this, the division processing mode of industry urgent need to resolve wafer is difficult to narrower or functional areas are coated with film layer in Cutting Road
In the case where, improve fragment yield and the problem of efficiency.
Summary of the invention
The technical problem to be solved in the present invention is that in view of the above drawbacks of the prior art, providing a kind of laser of wafer
Processing method and system solve the problems, such as to generate obvious chipping in wafer Slicing procedure and even damage crystal grain, especially for cutting
The wafer that narrower or Cutting Road functional areas are coated with film layer is cut, solves the problems, such as wafer fragment yield and low efficiency.
The technical solution adopted by the present invention to solve the technical problems is: providing a kind of laser processing of wafer, in advance
Cutting track equipped with wafer, the laser processing is comprising steps of by laser along cutting track from wafer upper surface
It is incident on inside wafer and carries out modification processing, form at least one layer of modification layer；Again by laser along cutting track on wafer
Surface carries out cutting-up operation, generates the crackle extended downwardly from upper surface；Sliver operation is carried out to wafer, is separated into multiple crystalline substances
Grain.
The technical solution adopted by the present invention to solve the technical problems is: a kind of laser processing of wafer is provided,
It is characterized in that, be preset with the cutting track of wafer, the Cutting Road functional areas of the wafer are coated with film layer, the laser processing
Comprising steps of being incident on inside wafer from wafer upper surface along cutting track by laser carries out modification processing, formed at least
One layer of defective modification layer of tool, and the defect is located at film layer lower position；Pass through laser again along cutting track in wafer
Upper surface carries out cutting-up operation, generates the crackle extended downwardly from upper surface；Sliver operation is carried out to wafer, is separated into multiple crystalline substances
Grain.
Wherein, preferred version is that the laser processing is comprising steps of by laser in the area close to wafer upper surface
Carry out modification processing in domain, the laser spot of the modification processing meets public in inside wafer and distance D1 apart from upper surface
FormulaCutting-up operation, the depth of cut D2 of the cutting-up operation are carried out in wafer upper surface by laser again
Meet formulaSliver operation is carried out from wafer lower surface direction along cutting track, is separated into multiple crystalline substances
Grain；Wherein, H is wafer thickness.
Wherein, preferred version is that the lower surface of the wafer is covered with diaphragm, the laser processing comprising steps of
After completion sliver operation is separated into multiple crystal grain, expansion membrane operations are carried out to diaphragm, so that the crystal grain is separated from each other.
Wherein, preferred version is: being incident on inside wafer from wafer upper surface along cutting track by laser and is changed
Matter processing forms multilayer and modifies layer.
Wherein, preferred version is that the laser processing is further comprised the steps of: in the progress cutting-up operation of wafer upper surface
Afterwards, protective film is covered with to assist sliver in the upper surface of wafer.
Wherein, preferred version is: the protective film is wheat membrane.
Wherein, preferred version is that the cutting track includes a plurality of segmentation track divided according to grain surface shape,
The laser processing in order divides each comprising steps of during carrying out modification processing and cutting-up operation
Track carries out process operation.
Wherein, preferred version is to further comprise the steps of: to be incident on along cutting track from wafer upper surface by first laser
Inside wafer carries out modification processing, forms at least one layer of modification layer；Again by second laser along cutting track the table on wafer
Face carries out cutting-up operation, generates the crackle extended downwardly from upper surface.
Wherein, preferred version is that the film layer is metallic diaphragm.
The technical solution adopted by the present invention to solve the technical problems is: providing a kind of laser-processing system of wafer, wraps
It includes: workbench, the fixed wafer of the workbench；Laser, the laser output laser to wafer, and the table from wafer
Face is incident；Sliver apparatus, the sliver apparatus carry out sliver operation to wafer；Main control unit, the main control unit are stored with meter
The step of calculation machine program, the computer program can be performed to realize the method, with control workbench, laser and
One of sliver apparatus a variety of works.
Wherein, preferred version is: the laser-processing system includes the mobile mechanism being arranged on workbench, passes through shifting
Motivation structure drives wafer work platform or wafer mobile；Alternatively, the laser-processing system includes the vibration being arranged on laser
Illuminating apparatus structure drives laser to move on wafer by galvanometer mechanism.
The beneficial effects of the present invention are compared with prior art, the present invention is by designing the laser processing of wafer a kind of
Method and system can avoid in Slicing procedure in the case where adaptation Cutting Road is narrower or Cutting Road functional areas are coated with film layer
It leads to the problem of obvious chipping and even damages crystal grain, to promote fragment yield and efficiency.Meanwhile even if be not Cutting Road it is narrower or
In the case that Cutting Road functional areas are coated with film layer, this programme can still promote the yield and efficiency of wafer fragment.
Detailed description of the invention
Present invention will be further explained below with reference to the attached drawings and examples, in attached drawing:
Fig. 1 is the flow diagram of laser processing of the present invention；
Fig. 2 is the flow diagram of the laser processing for the wafer for having film layer the present invention is based on Cutting Road functional areas；
Fig. 3 is the structural schematic diagram for the wafer that the present invention is preset with cutting track；
Fig. 4 is the structural schematic diagram for the wafer that the present invention forms modification layer；
Fig. 5 is the structural schematic diagram that the present invention generates the crackle extended from top to bottom；
Fig. 6 is the structural schematic diagram that the present invention is separated into crystal grain；
Fig. 7 is the structural schematic diagram for the wafer for having film layer the present invention is based on Cutting Road functional areas；
Fig. 8 is the flow diagram that Fig. 1 has qualifications；
Fig. 9 is the flow diagram that Fig. 1 expand membrane operations；
Figure 10 is that Fig. 9 completes to expand the structural schematic diagram of the wafer of membrane operations；
Figure 11 is the structural schematic diagram of laser-processing system of the present invention.
Specific embodiment
Now in conjunction with attached drawing, elaborate to presently preferred embodiments of the present invention.
As shown in Figures 1 to 7, the present invention provides a kind of preferred embodiment of the laser processing of wafer.
A kind of laser processing of wafer 100, the laser processing comprising steps of
Step S10, it is preset with the cutting track 101 of wafer 100；
Step S21, it is incident on inside wafer 100 and is modified from wafer upper surface along cutting track 101 by laser
Processing forms at least one layer of modification layer 120；
Step S22, cutting-up operation is carried out in 100 upper surface 111 of wafer along cutting track 101 by laser again, generated
The crackle 130 extended downwardly from upper surface 111；
Step S23, sliver operation is carried out to wafer 100, is separated into multiple crystal grain 200.
Specifically, it provides one and includes the wafer 100 including Silicon Wafer；Wafer 100 includes 111 He of upper surface being disposed opposite to each other
Lower surface 112, wherein the upper surface 111 of wafer 100 is regarded as wafer 100 for making an end face of functional areas, certainly not
It is limited to manufacture functional areas；And refer to Fig. 3, be preset with the cutting track 101 of wafer 100, i.e., to 100 cutting processing of wafer when, edge
The mobile represented track of certain track, default cutting track 101 refer to that planning is in the position to be cut of wafer 100 in advance
It sets, i.e. Cutting Road, becomes " bare die " before wafer 100 is undressed, not formed Cutting Road, cutting track 101 at this time is a kind of
Virtual track is split wafer 100 along the virtual track by laser, is separated into more in real processing
A crystal grain 200.
Specific laser processing mode is the focus point 4211 by adjusting laser 421, to carry out step S21 with reference to Fig. 4
With step S22.In the step s 21, it is incident on inside wafer 100 along cutting track 101 from wafer upper surface by laser 421
Modification processing is carried out, at least one layer of modification layer 120 is formed, specifically inside the focus point 4211 to wafer 100 of adjustment laser 421
Modification layer 120 is formed, also, the modification layer 120 will nearby generate running crack 121, especially modify about 120 two, layer
Direction, consequently facilitating 100 successive fragment of wafer forms crystal grain 200.Wherein, according to cutting track 101, layer 120 is modified equably
It is distributed in one or more planes inside wafer 100.
Preferably, it is incident on inside wafer 100 and is changed from wafer upper surface along cutting track 101 by laser 421
Matter processing forms multilayer and modifies layer 120.The position for adjusting the focus point 4211 of laser 421, in different height in wafer 100
Portion carries out modification processing, and, it should be neighbouring setting that multilayer, which modifies layer 120, and the crackle 121 of each modification layer 120 with it is neighbouring
The crackle 121 for modifying layer 120 is close, operates subsequent sliver, reduces the binding force between crystal grain 200, avoids sliver incomplete
Or 200 fragment position of crystal grain inaccuracy and be damaged.
Can to avoid in scribing processes generate clast 200 functional areas of crystal grain are polluted, functional areas can be for
Incude the induction zone of ambient, but is not limited to induction zone.
In the present embodiment, for the wafer 100 of narrow Cutting Road, conventional modification processing cannot achieve 100 depths of wafer
Laser processing, easily generation crystal grain 200 damage and big chipping, seriously affect processing yield；Especially for 100 thickness of wafer compared with
When big or sufficiently narrow Cutting Road processing request, it is also necessary to carry out step S22.
Step S22 is carried out along cutting track 101 in 100 upper surface 111 of wafer with reference to Fig. 5 and Fig. 6, then by laser
Cutting-up operation, generates the crackle 130 extended downwardly from upper surface 111.Wherein, crackle 130 is the work of 111 cutting-up of upper surface operation
With region and its running crack.
Firstly, the focus point of adjustment laser carries out cutting-up behaviour to 100 upper surface 111 of wafer to 100 upper surface 111 of wafer
Make, moved along cutting track 101, and generates corresponding with cutting track 101 stroke on 100 upper surface 111 of wafer
Trace, and the crackle 130 extended down from 100 upper surface 111 of wafer, in same perpendicular, scratch, crackle 130, crackle
121, the cooperation of layer 120 is modified, to reduce the binding force between crystal grain 200 when carrying out sliver to wafer 100, avoid point
Piece not exclusively or 200 fragment position of crystal grain inaccuracy and be damaged.
It preferably, is raising efficiency, laser only need to draw the road 1-2 along 101 direction of cutting track in 100 upper surface 111 of wafer,
Crackle 130 can be connected with adjacent crackle 121, modification layer 120, thus more conducively sliver.
In the present embodiment, sliver operation can be carried out by some splitting tools or equipment, such as pass through mechanical chopper/pressing
Machine makes wafer 100 according to external force expanded crack 121, realizes along 101 collisions of cutting track/pressing wafer, 100 lower surface 112
Sliver operation.
In the present embodiment, with reference to Fig. 7, Cutting Road functional areas are coated with the wafer 100 of film layer 140, film layer 140 is preferred
For metallic diaphragm, naturally it is also possible to make the film layer of other nontransparent materials, when modification processing, laser can not be penetrated in film layer formed
Portion's modification.Therefore, on the basis of above-mentioned laser processing, a kind of Cutting Road functional areas based on wafer 100 is provided and are coated with
The laser processing of film layer 140, with reference to Fig. 2, when the Cutting Road functional areas of the wafer 100 are coated with film layer 140, the laser
Processing method comprising steps of
Step S10, it is preset with the cutting track 101 of wafer 100；
Step S21 ', by laser along cutting track 101 from 100 upper surface 111 of wafer be incident on inside wafer 100 into
Row modification processing, the modification layer 120 of formation has defect, and the defect is located at 140 lower section of film layer.
Step S22 ', pass through laser again along cutting track 101 in the progress cutting-up operation of 100 upper surface 111 of wafer, generate
The crackle 130 extended downwardly from upper surface 111；
Step S23, sliver operation is carried out to wafer 100, is separated into multiple crystal grain 200.
Wherein, multiple positions on 100 Cutting Road of wafer can be set in film layer 140, main to constitute Cutting Road functional areas
It acts on as conductive, calibration etc..
Specifically, step S21 ' and step S22 ' is compared with above-mentioned steps S21 and step S22, it is maximum the difference is that,
Except 140 corresponding position of film layer, cutting track 101 can produce uniform modification layer 120 inside wafer 100.
Relative to step S21 and step S22, although modification layer 120 has defect, due to the single function of Cutting Road
Energy area area is not too large, even if functional areas dense distribution, the partial mulching area of film layer 140 is not too large, and due to crackle
130 have the characteristic extended from top to bottom, after cutting-up operation and sliver operation, can smoothly be separated into wafer 100
Multiple crystal grain 200.
Wherein, defect includes that uneven modification, modification deep anomalies and part do not form modification.
In the present embodiment, wafer is incident on from 100 upper surface 111 of wafer along cutting track 101 by first laser
Modification processing is carried out inside 100, forms at least one layer of modification layer 120；Pass through second laser again along cutting track 101 in wafer
100 upper surfaces 111 carry out cutting-up operation, generate the crackle 130 extended downwardly from upper surface 111.
Wherein, the first laser is the laser that modification layer 120 can be formed inside wafer 100, if wavelength is 500-
Green light/infrared laser of 2000nm；The second laser is to form ablation in 100 upper surface 111 of wafer to generate
The laser that crackle 130 is extended downwardly from upper surface 111, such as ultraviolet laser/green light that wavelength is 170-650nm.
As shown in Fig. 4, Fig. 5 and Fig. 8, the present invention provides the specific preferred embodiment of laser processing.
The laser processing comprising steps of
Step S31, modification processing is carried out in the region close to 100 upper surface 111 of wafer by laser, the modification adds
Distance D1 of the laser spot of work inside wafer 100 and apart from upper surface 111, meets formula
Step S32, cutting-up operation is carried out in 100 upper surface 111 of wafer by laser again, the cutting of the cutting-up operation is deep
Degree D2 meets formula
Step S33, sliver operation is carried out from 100 lower surface of wafer, 112 direction along cutting track 101, be separated into multiple
Crystal grain 200.
Wherein, H is 100 thickness of wafer.
Specifically, distance D1 meets formulaUnder the laser focal height, inside wafer 100
It is formed by modification 120 position of layer and is unlikely to structural strength that is on the upper side and being easily destroyed 100 upper surface 111 of wafer and top, from
And it avoids chipping occur in cutting process and causing wafer 100 impaired.Meanwhile under the laser focal height, wafer 100
Inside is formed by modification 120 position of layer and is unlikely to relatively low and forms wider notch on 100 top of wafer, is unfavorable for crystal grain
200 Precision Machining.
And depth D2 meets formulaWhile guaranteeing processing quality, processing efficiency is taken into account, is met
In high precision, the requirement of high quality, highly-efficient processing.
Compared to traditional machine cuts or high pressure waterjet, the laser cutting mode of the present embodiment processing essence with higher
Degree, the Precision Machining for adapting to crystal grain 200 need.Simultaneously as laser produces crackle 130 in the upper surface of wafer 100 111,
To which when carrying out fragment to wafer 100, upper surface 111 can be broken along crackle 130 and be separated, sliver difficulty is alleviated,
And the mode of this auxiliary sliver, it is possible to reduce the number of plies of inside modification processing, to improve fragment efficiency and yield.It needs
It is noted that crackle 130 equably extends down from 100 upper surface 111 of wafer, so that in fragment, wafer 100
Uniform force, it is not easy to generate local stress and be damaged.
Regardless of being that machine cuts or high pressure waterjet are not able to satisfy above-mentioned precision machined requirement, while machine cuts
Or high pressure waterjet also can only carry out cutting-up operation, cannot achieve modification processing, if by force by machine cuts or high pressure waterjet
Cutting-up operation is carried out, and laser cutting carries out modification processing and combines processing, not only accuracy is low, also will be greatly reduced production effect
Rate, i.e. replacement cutting mode trouble, the same position for being not easy to the two are processed jointly, and required processing environment is also not identical.
As shown in Figure 9 and Figure 10, the present invention provides the preferred embodiment of the laser processing based on diaphragm.
The lower surface 112 of the wafer 100 is covered with diaphragm 300, the laser processing comprising steps of
Step S24, expansion membrane operations are carried out to diaphragm 300, so that the crystal grain 200 is separated from each other.
Wherein, the step S24 is the subsequent step completed after step S23.
Wafer 100 is cut, sliver operation etc. processing when, the lower surface 112 of wafer 100 is covered with diaphragm 300,
Using diaphragm 300 as the carrier of carrying wafer 100.In some embodiments, diaphragm 300 can be blue film, be also possible to
UV film or other can be used as the material of carrier.
In wafer 100 after sliver operates, the crystal grain 200 of generation will be disconnected from each other, to carry out expansion film to diaphragm 300
When processing, diaphragm 300 extends outward, and then the crystal grain 200 after fragment is separated from each other, so as to subsequent technique to crystal grain 200 into
Row operation.
In the present invention, the preferred embodiment of the laser processing based on wheat membrane is provided.
The laser processing further comprises the steps of: after 100 upper surface 111 of wafer carries out cutting-up operation, in wafer 100
Upper surface 111 be covered with protective film；Protective film is preferably wheat membrane, but is not limited to wheat membrane.
The structural strength for enhancing wafer 100 by protective film, when the lower surface 112 to wafer 100 carries out splitting fragment,
Protective film can play preferable protective effect.Meanwhile protective film is sticked in the upper surface of wafer 100 111, is also avoided that wafer
100 front is contaminated, to play the effect for keeping wafer 100 clean.
In the present invention, the preferred embodiment of laser processing is provided.
The cutting track 101 includes a plurality of segmentation track divided according to 200 surface shape of crystal grain, and the laser adds
Work method in order adds each segmentation track comprising steps of during carrying out modification processing and cutting-up operation
Work operation.
In the present embodiment, two kinds of preferred versions are provided.
Scheme one,
Cutting track 101 includes multiple first track n and multiple second track m, and multiple first track n are parallel to each other, more
A second track m is parallel to each other, and the first track n is mutually perpendicular to the second track m, alternatively, the first track n and the second track m phase
Mutually it is in a certain angle, can Formation cross-section be rectangle crystal grain 200 and section be parallelogram crystal grain 200, with specific reference to not
Crystal grain 200 with form is configured.
In cutting track 101 used by rectangle crystal grain 200, the first track n and the second track m are mutually perpendicular to, and are being processed
When wafer 100 with Cutting Road, the first track n is corresponding with transverse cuts road, and the second track m is corresponding with longitudinally cutting road.
Due in cutting track 101 the first track n and the second track m be mutually perpendicular to, so that laser is along cutting track 101 in wafer
The scratch and crackle 130 processed on 100 upper surface 111 also will be criss-cross, to respectively correspond four sides of segmentation crystal grain 200A.
Scheme two,
On the basis of scheme one, if wanting to form the crystal grain 200 that a surface is hexagon, a variety of different types of rails can be used
The track of few type can also be used in mark.Preferably, the line segment of the crystal grain 200 of hexagon is to be spliced to form.
In the present embodiment, a kind of preferred version of wafer is provided.
The thickness H of wafer 100 is 0.1mm to 0.5mm, and Cutting Road functional areas are coated with film layer 140, different under same thickness
The Cutting Road width requirement of material is different, it is preferable that film layer 140 with a thickness of 1 μm to 5 μm.Wafer under this structure setting
100, using above-mentioned laser processing, effect is particularly evident, can avoid generating the damage of crystal grain 200 in Slicing procedure well
With big chipping, to promote yield and efficiency.
As shown in figure 11, the present invention provides a kind of preferred embodiment of the laser-processing system of wafer.
A kind of laser-processing system of wafer 100, including workbench 410, laser 420, sliver apparatus, main control unit
430, wherein the fixed wafer 100 of the workbench 410, the laser 420 export laser 421 to wafer 100, and from crystalline substance
100 upper surfaces of circle are incident, and the sliver apparatus carries out sliver operation to wafer 100, and the main control unit 430 is stored with computer
The step of program, the computer program can be performed to realize the method, to control workbench 410, laser 420
With one of sliver apparatus or a variety of work.
For example, height or focal position of the main control unit 430 by adjusting laser 420, to the crystalline substance on workbench 410
Circle 100 carries out modification processing or cutting-up operation.
Wherein, the laser-processing system includes mobile mechanism's (such as main control unit 430 being arranged on workbench 410
It is connect by a dotted line with workbench 410), drive 100 workbench 410 of wafer or wafer 100 mobile by mobile mechanism；Or
Person, the laser-processing system include the galvanometer mechanism being arranged on laser 420, drive laser 421 to exist by galvanometer mechanism
It is moved on wafer 100.
As described above, only preferred embodiment is not intended to limit the scope of the present invention, Fan Yibenfa
Equivalent change or modification made by bright claim is all that the present invention is covered.
Claims (11)
1. a kind of laser processing of wafer, which is characterized in that be preset with the cutting track of wafer, the laser processing
Comprising steps of
Inside wafer is incident on from wafer upper surface along cutting track by laser and carries out modification processing, is formed at least one layer and is changed
Matter layer；
Cutting-up operation is carried out in wafer upper surface along cutting track by laser again, what generation was extended downwardly from upper surface splits
Line；
Sliver operation is carried out to wafer, is separated into multiple crystal grain.
2. a kind of laser processing of wafer, which is characterized in that be preset with the cutting track of wafer, the Cutting Road of the wafer
Functional areas are coated with film layer, the laser processing comprising steps of
Inside wafer is incident on from wafer upper surface along cutting track by laser and carries out modification processing, forms at least one layer of tool
Defective modification layer, and the defect is located at film layer lower position；
Cutting-up operation is carried out in wafer upper surface along cutting track by laser again, what generation was extended downwardly from upper surface splits
Line；
Sliver operation is carried out to wafer, is separated into multiple crystal grain.
3. laser processing according to claim 1 or 2, which is characterized in that the laser processing comprising steps of
Modification processing is carried out in the region close to wafer upper surface by laser, the laser spot of the modification processing is in wafer
The internal and distance D1 apart from upper surface, meets formula
Cutting-up operation is carried out in wafer upper surface by laser again, the depth of cut D2 of the cutting-up operation meets formula
Sliver operation is carried out from wafer lower surface direction along cutting track, is separated into multiple crystal grain；
Wherein, H is wafer thickness.
4. laser processing according to claim 3, which is characterized in that the lower surface of the wafer is covered with diaphragm,
The laser processing comprising steps of complete sliver operation be separated into multiple crystal grain after, expansion membrane operations are carried out to diaphragm so that
The crystal grain is separated from each other.
5. laser processing according to claim 1 or 2, it is characterised in that: by laser along cutting track from crystalline substance
Circle upper surface is incident on inside wafer and carries out modification processing, forms multilayer and modifies layer.
6. laser processing according to claim 1 or 2, which is characterized in that the laser processing further includes step
It is rapid: after wafer upper surface carries out cutting-up operation, protective film to be covered in the upper surface of wafer, to assist sliver.
7. laser processing according to claim 6, it is characterised in that: the protective film is wheat membrane.
8. laser processing according to claim 1 or 2, which is characterized in that the cutting track includes a plurality of basis
The segmentation track that grain surface shape is divided, the laser processing is comprising steps of carrying out modification processing and cutting-up behaviour
During work, process operation is carried out to each segmentation track in order.
9. laser processing according to claim 1 or 2, which is characterized in that further comprise the steps of:
Inside wafer is incident on from wafer upper surface along cutting track by first laser and carries out modification processing, forms at least one
Layer modification layer；Cutting-up operation is carried out in wafer upper surface along cutting track by second laser again, is generated downward from upper surface
The crackle of extension.
10. a kind of laser-processing system of wafer characterized by comprising
Workbench, the fixed wafer of the workbench；
Laser, the laser output laser to wafer, and it is incident from wafer upper surface；
Sliver apparatus, the sliver apparatus carry out sliver operation to wafer；
Main control unit, the main control unit are stored with computer program, and the computer program can be performed to realize as weighed
Benefit requires the step of 1 or 2 the method, to control one of workbench, laser and sliver apparatus or a variety of carry out works
Make.
11. laser-processing system according to claim 10, it is characterised in that: the laser-processing system includes that setting exists
Mobile mechanism on workbench drives wafer work platform or wafer mobile by mobile mechanism；Alternatively, the laser processing
System includes the galvanometer mechanism being arranged on laser, drives laser to move on wafer by galvanometer mechanism.
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| CN201910585540.3A CN110216389A (en) | 2019-07-01 | 2019-07-01 | A kind of laser processing and system of wafer |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111889895A (en) * | 2020-07-02 | 2020-11-06 | 松山湖材料实验室 | Jet-assisted multi-pulse-width laser ingot stripping method |
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Application publication date: 20190910 |