CN109997227A - Electronic device and range unit and electronic equipment including it - Google Patents
Electronic device and range unit and electronic equipment including it Download PDFInfo
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- CN109997227A CN109997227A CN201780071962.8A CN201780071962A CN109997227A CN 109997227 A CN109997227 A CN 109997227A CN 201780071962 A CN201780071962 A CN 201780071962A CN 109997227 A CN109997227 A CN 109997227A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
- G01V8/00—Prospecting or detecting by optical means
- G01V8/10—Detecting, e.g. by using light barriers
- G01V8/12—Detecting, e.g. by using light barriers using one transmitter and one receiver
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
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Abstract
A kind of electronic device and range unit and electronic equipment including it.Electronic device (300) includes: the first substrate (301), first substrate (301) has each other relative first surface (3011) and second surface (3012), first surface (3011) is formed with multiple photo sensing units (303) of array distribution, and second surface (3012) is formed with multiple and each first bond pad (304) being correspondingly arranged of photo sensing unit (303)；And second substrate (302), second substrate (302) has third surface (3021), multiple reading circuit units (305) are formed in second substrate (302), third surface (3021) are formed with multiple and each second bond pad (306) being correspondingly arranged of reading circuit unit (305)；Wherein, each of multiple reading circuit units (305) and each of multiple photo sensing units (303) are respectively corresponding each other, and eutectic bonding connects the first bond pad (304) each other with the second bond pad (306).The electronic device to select on conceptual design very flexibly using hybrid integrated mode, and is conducive to the miniaturization of electronic device using eutectic bonding mode.
Description
Specification
Present invention relates generally to integrated circuit fields, relate more specifically to a kind of electronic device and range unit and electronic equipment including it.
With the development of science and technology, detection and measuring technique are applied to various fields.Wherein, ranging technology detects target including the use of transmitting electromagnetic wave or light beam etc..Specifically, ranging technology usually emits electromagnetic wave (or transmitting light) and its echo (or reflected light) is irradiated and received to target, thus to obtain information such as the distance of target to electromagnetic wave (or light) launch point, range rate (radial velocity), orientation, height.This kind of ranging technology can be used for automatic Pilot, ground mapping and unmanned plane etc..
Transmitter and receiver are generally comprised using the range unit (such as radar) of above-mentioned ranging technology at present, electromagnetic wave (or light) is issued by transmitter, it is received by the receiver after object reflects, and transmitter and receiver are controlled by synchronised clock, and then electromagnetic wave (or light) can be accurately obtained from transmitter to object under test surface again to the time of receiver, so as to obtain distance of the range unit apart from object under test.Based on the principle, a Scan Architecture is added, there is certain coverage area, that is, constitute complete range unit.
Current range unit is generally machinery rotating type, is divided into the top part and the bottom part point, and lower part is fixed, and top is divided into sweep mechanism, and upper part includes window portion, and window portion is send-receive structure, in contain the one-to-one transmitter of multiple groups and receiver.In the course of work of the range unit, upper part only has one group of transmitter and receiver in running order with certain frequency 360 degree rotation, in synchronization.
Therefore, current range unit needs to introduce multiple mechanical parts, especially has movable member, therefore reliability is low.Furthermore structure is complicated for current range unit, and each line transmitter and receiver require to be respectively aligned to, and causes the difficulty of automatic assembling, therefore cause production efficiency low.In addition, current range unit includes multiple groups transmitter and receiver as described above, Material Cost is very high, along with complicated assembling bring human cost, therefore leads to current range unit higher cost.
Summary of the invention
Propose the present invention at least one of to solve the above-mentioned problems.The present invention provides a kind of electronic device, can be used to implement the receiver of range unit, cooperates the transmitter that will be described in the description later that can overcome problem as described above to realize range unit.Specifically, electronic device provided by the invention includes: the first substrate, first substrate has each other relative first surface and second surface, the first surface of first substrate is formed with multiple photo sensing units of array distribution, and the second surface of first substrate is formed with multiple and each first bond pad being correspondingly arranged of the photo sensing unit；And second substrate, second substrate have third surface, are formed with multiple reading circuit units in second substrate, the third surface of second substrate is formed with multiple with each second bond pad being correspondingly arranged of the reading circuit unit；Wherein, each of each of the multiple reading circuit unit and the multiple photo sensing unit are respectively corresponding each other, the first bond pad for being correspondingly arranged with each of the photo sensing unit and eutectic bonding is connect each other with each second bond pad being correspondingly arranged of the reading circuit unit.
In one embodiment, electrical connecting unit is formed between each photo sensing unit and the first bond pad of corresponding setting.
In one embodiment, the electrical connecting unit is through silicon via.
In one embodiment, the photo sensing unit includes photo multiplier device.
In one embodiment, the photo multiplier device includes avalanche photodide.
In one embodiment, the reading circuit unit is complementary metal oxide semiconductor reading circuit.
In one embodiment, the eutectic bonding of first bond pad and second bond pad is any one of following: aluminium-germanium bonding, gold-germanium bonding, Au-Si bonding, Jin-tin bonding, indium-tin bonding, aluminium-silicon bonding, lead-tin bonding.
In one embodiment, the third surface of second substrate is also formed with routing pad.
In one embodiment, first substrate is silicon base or non-silicon-based bottom.
In one embodiment, first substrate is silicon base, and the wavelength of the photo sensing unit light beam detected includes 905 nanometers；Alternatively, first substrate is non-silicon-based bottom, the wavelength of the photo sensing unit light beam detected includes 1550 nanometers.
In one embodiment, the planar dimension of the photo sensing unit and the reading circuit unit
Planar dimension it is identical.
In one embodiment, the light incident side of each photo sensing unit be also formed with lenticule, anti-reflection film, in optical filter at least one of.
In one embodiment, the first surface of first substrate is also formed with multiple images sensor unit, multiple images sensor readout circuit unit is also formed in second substrate, each of described image sensor reading circuit unit and each of described image sensor unit are respectively corresponding each other.
In one embodiment, the second surface of first substrate is formed with multiple and each third bond pad being correspondingly arranged of described image sensor unit, the third surface of second substrate is formed with multiple with each fourth bond pad being correspondingly arranged of described image sensor reading circuit unit, the third bond pad being correspondingly arranged with each of described image sensor unit and eutectic bonding is connect each other with each fourth bond pad being correspondingly arranged of described image sensor reading circuit unit.
In one embodiment, the first surface of first substrate includes M × N block region, each region in M × N block region includes the first subregion and the second subregion not overlapped, the photoelectric sensing unit is located in first subregion, described image sensor unit is located in second subregion, wherein M, N are positive integer, and M × N is greater than 1.
In one embodiment, described image sensor unit is cmos image sensor.
In one embodiment, each described image sensor unit includes one group of RGB unit or multiple groups RGB unit.
According to a further aspect of the invention, a kind of range unit is provided, the range unit includes light-emitting device and reflection optical receiving device, in which: the light-emitting device is used to emit the optical signal for the field angle FOV for covering the range unit；The reflection optical receiving device includes electronic device described in any of the above embodiments, and the reflection optical receiving device is used to receive the optical signal and encounters the part signal that object under test back reflection is returned, and the range information of the object under test is obtained according to the part signal.
In one embodiment, the light-emitting device includes optical transmitting set and light expand unit.
In one embodiment, the smooth expand unit for being collimated, being expanded to the light that the optical transmitting set emit, even light, expand at least one of visual field and handle.
According to a further aspect of the present invention, a kind of electronic equipment including electronic device described in any of the above embodiments is provided, the electronic equipment includes unmanned plane, autonomous driving vehicle or robot.
Electronic device according to an embodiment of the present invention integrated electro sensing unit and reading circuit unit by the way of hybrid integrated, so that scheme selects very flexibly in design.In addition, electronic device according to an embodiment of the present invention forms photo sensing unit by the way of eutectic bonding and the good of reading circuit unit physically and electrically connects, convenient for the control of size of electronic devices, be conducive to the miniaturization of electronic device.Furthermore, the range information of all the points in entire visual field can be obtained based on the range unit that electronic device according to an embodiment of the present invention is realized, compared to the machinery rotating type range unit of traditional simple scan, it can achieve very fast response speed, and the movable member of any machinery is not needed, reliability is improved, production cost and complexity are reduced, improves production efficiency.
Fig. 1 shows the exemplary structure of range unit provided by the invention and the operation principle schematic diagram of light-emitting device；
Fig. 2 shows the exemplary structure of range unit provided by the invention and the operation principle schematic diagrams of reflection optical receiving device；
Fig. 3 shows the cross-sectional view of electronic device according to an embodiment of the present invention；
Fig. 4 shows the cross-sectional view of the first substrate of electronic device according to an embodiment of the present invention；
Fig. 5 shows the cross-sectional view of the second substrate of electronic device according to an embodiment of the present invention；
Fig. 6 shows the first bond pad of electronic device according to an embodiment of the present invention and the schematic diagram of the second bond pad eutectic bonding；And
Fig. 7 shows the exemplary planar layout of electronic device according to an embodiment of the present invention.
In order to enable the object, technical solutions and advantages of the present invention become apparent, it is described in detail below with reference to accompanying drawings according to example embodiment of the present invention.Obviously, described embodiment is only a part of the embodiments of the present invention, rather than whole embodiments of the invention, it should be appreciated that the present invention is not limited by example embodiment described herein.Based on the embodiment of the present invention described in the present invention, those skilled in the art's obtained all other embodiment in the case where not making the creative labor should all be fallen under the scope of the present invention.
In the following description, a large amount of concrete details are given so as to provide a more thorough understanding of the present invention.It is, however, obvious to a person skilled in the art that the present invention may not need
One or more of these details and be carried out.In other examples, in order to avoid confusion with the present invention, some technical characteristics well known in the art are not described.
It should be understood that the present invention can be implemented in different forms, and it should not be construed as being limited to embodiments presented herein.On the contrary, provide these embodiments will make it is open thoroughly and completely, and will fully convey the scope of the invention to those skilled in the art.
The purpose of term as used herein is only that description specific embodiment and not as limitation of the invention.Herein in use, " one " of singular, "one" and " described/should " be also intended to include plural form, other mode unless the context clearly indicates.It is also to be understood that term " composition " and/or " comprising ", when being used in this specification, it determines the presence of the feature, integer, step, operations, elements, and/or components, but is not excluded for one or more other features, integer, step, operation, the presence or addition of component, assembly unit and/or group.Herein in use, term "and/or" includes any and all combination of related listed item.
In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, to illustrate technical solution proposed by the present invention.Presently preferred embodiments of the present invention is described in detail as follows, however other than these detailed descriptions, the present invention can also have other embodiments.
As previously mentioned, current range unit is generally machinery rotating type, there is that reliability is low, production efficiency is low, the shortcomings such as at high cost.Based on this, the present invention provides a kind of solid range unit, describes range unit 100 provided by the present invention referring to Figures 1 and 2 separately below.
As depicted in figs. 1 and 2, range unit 100 provided by the present invention includes light-emitting device 110 and reflection optical receiving device 120.Wherein, light-emitting device 110 is for emitting optical signal, and the field angle FOV of optical signal covering range unit 100 that light-emitting device 110 is emitted；The light that reflection optical receiving device 120 is used to receive the transmitting of light-emitting device 110 encounters the light of object under test back reflection, and calculates distance of the range unit 100 apart from the object under test.Light-emitting device 110 and its working principle are described below with reference to Fig. 1, and with reference to Fig. 2 description reflection optical receiving device 120 and its working principle.
As shown in Figure 1, light-emitting device 110 may include optical transmitting set 111 and light expand unit 112.Wherein, for optical transmitting set 111 for emitting light, the light that light expand unit 112 is used to emit optical transmitting set 111 carries out at least one of the following: collimating, expands, even light and expanding visual field.Collimation of the light Jing Guo light expand unit 112 that optical transmitting set 111 issues, expand, in even light and expansion FOV at least
One so that emergent light becomes to dissipate, be evenly distributed, can certain two dimension angular in covering scene, as shown in Figure 1, emergent light can cover at least partly surface of object under test.
In one embodiment, the light that optical transmitting set 111 is emitted can be laser, or non-laser.Correspondingly, optical transmitting set 111 can be the laser emitter of transmitting laser, or emit the non-laser transmitter of non-laser.
In one example, optical transmitting set 111 can be laser diode.In another example, optical transmitting set 111 can be vertical cavity surface emitting laser (Vertical Cavity Surface Emitting Laser, referred to as VCSEL).Vertical cavity surface emitting laser is surface emitting type laser, it is easier to realize wafer scale face array laser, furthermore, the wavelength temperature coefficient of vertical cavity surface emitting laser is small, it is 1/5 or less general laser wavelength temperature coefficient, therefore, the device using vertical cavity surface emitting laser as transmitting laser can make the optical maser wavelength of transmitting more stable.
In yet another example, optical transmitting set 111 or high-power light emitting diode.Specifically, the chip of more bare dies (multi-die) packing forms can be used, preferentially to improve the uniformity of light source.
The wavelength light emitted for optical transmitting set 111 can choose light of the wavelength between 895 nanometers to 915 nanometers, such as select the light of 905 nano wave lengths in one example.In another example, it can choose light of the wavelength between 1540 nanometers to 1560 nanometers, such as select the light of 1550 nano wave lengths.It in other examples, can also be according to application scenarios and the various light for needing to select other suitable wavelengths.
In one example, light expand unit 112 can be realized using one or more levels beam-expanding system.Wherein, which, which expands processing, can be reflective or transmission-type, both to be also possible to combination.In one example, the wide-angle light beam of multiple beamlet compositions can be obtained using holographic filter (holographic filter).
In yet another example, diode laser matrix can also be used, forms multi-beam using laser diode, it is also available similar to the laser expanded (VCSEL array laser as be mentioned above).
In another example, the adjustable MEMS of two dimension angular (MEMS) lens can also be used, the light of sending is reflected, pass through the angle between driving itself mirror surface of MEMS micromirror time changing and light beam, changing the angle moment of reflected light, to diverge to a two-dimensional angle, to cover the whole surface of object under test.
The range unit is for sensing external environmental information, for example, the range information of environmental goals, angle information, Reflection intensity information, velocity information etc..Specifically, the range unit of embodiment of the present invention can be applied to mobile platform, the mountable platform body in mobile platform of the range unit.Mobile platform with range unit can measure external environment, for example, measurement mobile platform carries out two dimension or three-dimensional mapping for purposes such as avoidances, and to external environment at a distance from barrier.In some embodiments, mobile platform includes at least one of unmanned vehicle, automobile and telecar.When range unit is applied to unmanned vehicle, platform body is the fuselage of unmanned vehicle.When range unit is applied to automobile, platform body is the vehicle body of automobile.When range unit is applied to telecar, platform body is the vehicle body of telecar.
The working principle of the light-emitting device 110 of range unit according to an embodiment of the present invention is described above exemplarily, and the working principle of the reflection optical receiving device 120 of range unit according to an embodiment of the present invention is described referring to Fig. 2.
Since the light that light-emitting device 110 emits can cover at least partly surface even whole surface of object under test, correspondingly, light reflects after reaching body surface, and the reflection optical receiving device 120 that reflected light reaches is also not single-point, but at array distribution.
As shown in Fig. 2, reflection optical receiving device 120 includes photo sensing unit array 121 and lens 122.Wherein, after the light returned from object under test surface reflection reaches lens 122, the principle based on lens imaging can reach the corresponding photo sensing unit in photo sensing unit array 121, then it is received by photo sensing unit, the photoelectric respone for causing photoelectricity to sense.
Reflected light is received during this due to being emitted to photo sensing unit from light, optical transmitting set 111 and photo sensing unit array 121 are by clock control module (for example including the clock control module 130 as shown in Figure 1 in range unit 100, or the clock control module except range unit 100) clock control is synchronized to them, thus according to flight time (TOF) principle, the point of reflected light arrival can be obtained at a distance from range unit 100.
Furthermore, since photo sensing unit is not single-point, but photo sensing unit array 121, so by data processing module (for example including the data processing module 140 as shown in Figure 1 in range unit 100, or the data processing module except range unit 100) data processing can obtain the range informations of all the points in entire range unit visual field, i.e., range unit towards external environment distance point cloud data.
In this way, can on a frame-by-frame basis quick scanning circumstance complete range information.Therefore compared to
The range unit of traditional simple scan can achieve very fast response speed.
The structure and its working principle of range unit provided by the present invention are described above exemplarily.In order to realize the reflection optical receiving device of range unit provided by the present invention, the present invention provides a kind of electronic device, which is implemented for the reflection optical receiving device of range unit provided by the present invention.In other words, the reflection optical receiving device of range unit provided by the present invention includes the electronic device being described below.
However, it should be understood that the electronic device being described below can be used for realizing the optical receiving device in any range unit or system or other electronic equipments, and the reflection optical receiving device being not limited solely to for realizing range unit provided by the present invention.The electronic device is specifically described below with reference to Fig. 3 to Fig. 7.
Fig. 3 shows the cross-sectional view of electronic device 300 according to an embodiment of the present invention.As shown in figure 3, electronic device 300 includes the first substrate 301 and the second substrate 302.
Wherein, the first substrate 301 has each other relative first surface 3011 and second surface 3012.The first surface 3011 of first substrate 301 is formed with multiple photo sensing units 303 of array distribution.The second surface 3012 of first substrate 301 is formed with multiple and each first bond pad 304 being correspondingly arranged of photo sensing unit 303.
Second substrate 302 has third surface 3021.Multiple reading circuit units 305 are formed in second substrate 302.The third surface 3021 of second substrate is formed with multiple and each second bond pad 306 being correspondingly arranged of reading circuit unit 305.
Wherein, each of each of multiple reading circuit units 305 and multiple photo sensing units 303 are respectively corresponding each other, and eutectic bonding (bond) is connect each other for the first bond pad 304 for being correspondingly arranged with each of photo sensing unit 303 and the second bond pad 306 being correspondingly arranged with each of reading circuit unit 305.
Since the photo sensing unit 303 and reading circuit unit 305 of electronic device 300 are by the way of hybrid integrated (i.e. photo sensing unit 303 and reading circuit unit 305 be not in same substrate), so that scheme selects very flexibly in design, such as the first substrate 301 where photo sensing unit 303 can be silicon-based substrate, or non-silicon-based substrate.
Furthermore, in manufacturing process selection, photo sensing unit 303 formed array and reading circuit unit 305 formed readout circuit chip can be completed in same fab, can also respectively different fabs completion, finally again by two panels chip bonding together.
In one example, it is formed with electrical connecting unit 307 between each photo sensing unit 303 and the first bond pad 304 of corresponding setting, as shown in Figure 3.Based on the electrical connecting unit, the signal that photo sensing unit 303 is sensed can be conducted from the first surface 3011 of the first substrate 301 to second surface 3012, be then based on bonding and conducted again to reading circuit unit 305.
Based on this, after optical signal is converted to current signal by photo sensing unit 303, the photoelectric current can be sampled by corresponding reading circuit unit, be handled and exported.In one example, electrical connecting unit 307 can be through silicon via (through silicon via, TSV), shown in the first substrate 301 as illustrated in FIG. 4.In one example, deep reaction ion etching (Deep Reactive Ion Etching can be utilized on silicon wafer, DRIE through-hole) is etched, layer of silicon dioxide is formed by way of oxidation in side wall again, as insulating layer, signal is led on one side from silicon wafer to another side as conducting wire with copper (or tungsten) filling through-hole again.
In one example, photo sensing unit 303 may include photo multiplier device.Faint optical signal can be converted into electric signal by photo multiplier device, so as to improve the sensitivity of electronic device 300.
Illustratively, photo multiplier device may include avalanche photodide (APD), i.e. photo sensing unit 303 can be implemented as APD unit, as shown in Figure 4.Avalanche photodide is the light-sensitive element used in laser communication, higher for the sensitivity of optical signal detecting, can detect optical signal well.
In other examples, photo sensing unit 303 can also be realized using other any suitable devices for being able to carry out photoelectricity sensing.
Since the APD of silicon base or the sensitive wave length peak value of photodiode are at 900 nanometers to 1000 nanometers or 800 nanometers to 900 nanometers, therefore, in one example, the first substrate 301 where photo sensing unit 303 is silicon-based substrate, and the wave-length coverage of the light beam detected of photo sensing unit 303 can be 900 nanometers to 1000 nanometers or 800 nanometers to 900 nanometers.Further, in another example, the first substrate 301 where photo sensing unit 303 is silicon-based substrate, and the wavelength of the light beam detected of photo sensing unit 303 can be any wavelength within 895 nanometers to 915 nanometer ranges.Further, in yet another example, the first substrate 301 where photo sensing unit 303 is silicon-based substrate, and the wavelength of the light beam detected of photo sensing unit 303 can be 905 nanometers.Based on this, reflection light device 120 described in Fig. 2 can be silicon based devices, and the wavelength of light beam detected may include 905 nanometers.
Similarly, since the APD at non-silicon-based bottom or the sensitive wave length peak value of photodiode are at 1500 nanometers to 1600 nanometers, therefore, in one example, the first substrate 301 where photo sensing unit 303 is non-silicon-based substrate, and the wave-length coverage of the light beam detected of photo sensing unit 303 can be 1500 nanometers to 1600 nanometers.Further, in another example, the first substrate 301 where photo sensing unit 303 is non-silicon-based substrate, and the wavelength of the light beam detected of photo sensing unit 303 can be any wavelength within 1540 nanometers to 1560 nanometer ranges.Further, in yet another example, the first substrate 301 where photo sensing unit 303 is non-silicon-based substrate, and the wavelength of the light beam detected of photo sensing unit 303 can be 1550 nanometers.Based on this, reflection light device 120 described in Fig. 2 can be non-silicon-based equipment, and the wavelength of light beam detected may include 1550 nanometers.
In one example, reading circuit unit 305 can be complementary metal oxide semiconductor reading circuit (CMOS ROIC).
In one example, the second bond pad 306 can be bonding aluminium (Al for bond), as shown in Figure 5.Correspondingly, the first bond pad 304 can be germanium, as shown in Figure 4.Photo switches, photo sensors part shown in Fig. 4 (such as APD unit) is carried out wafer scale with the second bond pad 306 by the first bond pad 304 with reading circuit device shown in fig. 5 (ROIC unit) to be bonded, electronic device 300 can be obtained, such as APD-CMOS ROIC chip is obtained, it is as shown in FIG. 6.
In this example, the eutectic bonding of the first bond pad 304 and the second bond pad 306 is germanium-aluminium bonding, using the germanium of second surface 3012 and the aluminium on third surface 3021 for example in 420 degree or so progress germanium-aluminium eutectic bondings.In this way, the signal of photo sensing unit 303 can be introduced into corresponding reading circuit unit 305.
Compared with the mode of indium Sn-coupled SSBR, aluminium-germanium eutectic bonding advantage is: tin ball is in brazing process, it may occur that melts, causes tin ball excessive around, occupied area is caused to increase；And in aluminium-germanium bonding process, metal melt will not occur and slime flux is conducive to the miniaturization of photo sensing unit (such as APD unit) convenient for the control of size.In addition, compared with other bonding patterns, aluminium-germanium eutectic bonding bond strength is high, and aluminium, germanium are prepared by way of depositing and etching, both materials are also and ic process compatibility.
In other examples, the eutectic bonding of first bond pad 304 and the second bond pad 306 may be other eutectic bondings, for example, any one of following: gold-germanium bonding, Au-Si bonding, Jin-tin bonding, indium-tin bonding, aluminium-silicon bonding, lead-tin bonding etc..
In one example, the third surface 3021 of the second substrate 302 is also formed with routing pad 308,
As shown in Figure 3 and Figure 5.Based on the routing pad 308, the connection between electronic device 300 and other devices may be implemented.
In one example, it is distributed in the photo sensing unit 303 that the first surface 3011 of the first substrate 301 is formed in array, such as altogether include M × N number of photo sensing unit 303 (such as M row N column photo sensing unit 303, wherein M and N is positive integer, and M × N > 1), it is located in M × N number of region of first surface 3011, each photo sensing unit can work independently.
Similarly, the quantity of the reading circuit unit 305 formed in the second substrate 302 is identical as the quantity of photo sensing unit 303 of the formation of first surface 3011 in the first substrate 301, these reading circuit units 305 and photo sensing unit 303 are one-to-one relationship.
Specifically, the planar dimension of photo sensing unit 303 and the planar dimension of reading circuit unit 305 can be identical, with guarantee they bonding when correspond (it will be appreciated by those skilled in the art that, " identical " herein can be understood as it is roughly the same because being difficult to realize in technique identical).
In this way, after one photo sensing unit 303 converts optical signals to current signal, the current signal can always reach that reading circuit unit 305 corresponding with the photo sensing unit 303, to be sampled, be handled and exported to the current signal by the reading circuit unit.And the photo sensing unit based on array, reflected light can be received by different photo sensing units everywhere on object under test surface, and then be read again by different reading circuit units, so as to obtain the range information on whole object surface.
In a further embodiment, the light incident side of each photo sensing unit 303 be also formed with lenticule, anti-reflection film, in optical filter at least one of, referring to the camber line region 309 of 303 top of photo sensing unit in Fig. 3, Fig. 4 and Fig. 6.Lenticule, anti-reflection film and the optical filter that light incident side based on each photo sensing unit 303 is formed, can be improved signal-to-noise ratio and optical sensitivity.
In a further embodiment, the first surface 3011 of first substrate 301 is also formed with multiple images sensor unit (not shown in FIG. 3), multiple images sensor readout circuit unit (not shown in FIG. 3) is also formed in second substrate 302, it is respectively corresponding each other that imaging sensor reads each of each of circuit unit and image sensor cell.
In this embodiment, electronic device 300 includes photo sensing unit and image sensor cell simultaneously, so that electronic device 300 includes photoelectricity sensing function and image collecting function simultaneously, based on photoelectricity sensing function, produce the depth information point cloud chart of object under test, the image of acquisition based on imaging sensor can carry out the identification etc. of object.
In one example, image sensor cell can be cmos image sensor (CMOS IS, referred to as CIS).In other examples, image sensor cell may be other suitable imaging sensors.
Photo sensing unit 303 and image sensor cell are both formed in the first surface 3011 of the first substrate 301, as long as the positional relationship between both meets the autonomous working for not influencing other side each other.
Illustratively, the positional relationship of photo sensing unit 303 and image sensor cell may be such that the first surface 3011 of the first substrate 301 may include M × N block region, and every piece of region includes a photo sensing unit 303 and an image sensor cell.Based on this, each region in M × N block region may include the first subregion and the second subregion not overlapped, photoelectric sensing unit 303 can be located in first subregion, image sensor cell can (wherein M, N be positive integer in second subregion, and M × N is greater than 1), as shown in Figure 7.
Fig. 7 shows the exemplary planar layout of the electronic device according to an embodiment of the present invention including imaging sensor.As shown in Figure 7, in this embodiment, electronic device 300 includes that image sensor cell (such as CIS unit) and corresponding imaging sensor read circuit unit (such as CIS ROIC) simultaneously, further includes photo sensing unit (such as APD unit) and corresponding reading circuit unit (such as APD ROIC).Image sensor cell is located in different subregions from photo sensing unit, and making it not influences respective work.
Connection between circuit unit is read for image sensor cell and corresponding imaging sensor, may refer to following example.
In this example, the second surface 3012 of first substrate 301 is formed with multiple and each third bond pad (not shown in FIG. 3) being correspondingly arranged of image sensor cell, the third surface 3021 of second substrate 302 is formed with multiple each fourth bond pad (not shown in FIG. 3) being correspondingly arranged that circuit unit is read with imaging sensor, the third bond pad being correspondingly arranged with each of image sensor cell and reads each fourth bond pad being correspondingly arranged of circuit unit with imaging sensor eutectic bonding is connect each other.
Third bond pad is connect with the eutectic bonding of fourth bond pad to be connect similar to the first bond pad with the eutectic bonding of the second bond pad, for sake of simplicity, details are not described herein again.It is connect based on third bond pad with the eutectic bonding of fourth bond pad, enables the signal of imaging sensor to reach corresponding imaging sensor and read circuit.
In other examples, image sensor cell and corresponding imaging sensor read to be formed by any other suitable mode between circuit unit and good electrically or physically connect.
In addition, in one example, image sensor cell may include color image sensor for the type of image sensor cell, it also may include black white image sensor.Illustratively, image sensor cell (such as CIS unit) may include one group of RGB unit or multiple groups RGB unit.Illustratively, image sensor cell can use Bayer color filter scheme.
Based on above description, electronic device according to an embodiment of the present invention integrated electro sensing unit and reading circuit unit by the way of hybrid integrated, so that scheme selects very flexibly in design.In addition, electronic device according to an embodiment of the present invention forms photo sensing unit by the way of eutectic bonding and the good of reading circuit unit physically and electrically connects, convenient for the control of size of electronic devices, be conducive to the miniaturization of electronic device.Further, electronic device according to an embodiment of the present invention may also include imaging sensor, to take into account photoelectricity sensing function and image collecting function.
According to another aspect of the invention, a kind of electronic equipment is additionally provided, the electronic equipment includes previously in conjunction with electronic device described in Fig. 3 to Fig. 7.Further, which may include the range unit previously in conjunction with Fig. 1 to Fig. 2 description.Illustratively, which can be mobile platform mentioned hereinbefore, for example including unmanned plane, autonomous driving vehicle or robot etc..
The structure and working principle of structure and working principle and range unit according to an embodiment of the present invention based on previously described electronic device according to an embodiment of the present invention, it will be appreciated by those skilled in the art that the structure and working principle of electronic equipment according to an embodiment of the present invention, for sake of simplicity, details are not described herein again.
Although describing example embodiment by reference to attached drawing here, it should be understood that above example embodiment are only exemplary, and are not intended to limit the scope of the invention to this.Those of ordinary skill in the art can make various changes and modifications wherein, be made without departing from the scope of the present invention and spiritual.All such changes and modifications are intended within the scope of the present invention required by being included in appended claims.
Those of ordinary skill in the art may be aware that unit described in conjunction with the examples disclosed in the embodiments of the present disclosure and algorithm steps, can be realized with the combination of electronic hardware or computer software and electronic hardware.These functions are implemented in hardware or software actually, the specific application and design constraint depending on technical solution.Professional technician can make each specific application
Differently realize described function, but such implementation should not be considered as beyond the scope of the present invention.
In several embodiments provided herein, it should be understood that disclosed device and method may be implemented in other ways.Such as, apparatus embodiments described above are merely indicative, such as, the division of the unit, only a kind of logical function partition, there may be another division manner in actual implementation, such as multiple units or components may be combined or can be integrated into another equipment, or some features can be ignored or not executed.
In the instructions provided here, numerous specific details are set forth.It is to be appreciated, however, that the embodiment of the present invention can be practiced without these specific details.In some instances, well-known methods, structures and techniques have not been shown in detail, so as not to obscure the understanding of this specification.
Similarly, it should be understood that, in order to simplify the present invention and help to understand one or more of the various inventive aspects, in the description to exemplary embodiment of the present invention, each feature of the invention is grouped together into a single embodiment, figure, or description thereof sometimes.However, the method for the invention should not being construed to reflect an intention that, i.e. the claimed invention requires features more more than feature expressly recited in each claim.More precisely, as corresponding claims reflect, inventive point is that corresponding technical problem can be solved with the feature of all features less than single embodiment disclosed in some.Therefore, it then follows thus claims of specific embodiment are expressly incorporated in the specific embodiment, wherein each, the claims themselves are regarded as separate embodiments of the invention.
It will be appreciated by those skilled in the art that, other than mutually exclusive between feature, all process or units of all features disclosed in this specification (including adjoint claim, abstract and attached drawing) and so disclosed any method or apparatus can be combined using any combination.Unless expressly stated otherwise, each feature disclosed in this specification (including adjoint claim, abstract and attached drawing) can be replaced with an alternative feature that provides the same, equivalent, or similar purpose.
Furthermore, those skilled in the art can understand that, although certain features included by some embodiments described herein include other embodiments rather than other feature, the combination of the feature of different embodiments means to be within the scope of the present invention and formed different embodiments.For example, in detail in the claims, embodiment claimed it is one of any can in any combination mode come using.
Various component embodiments of the invention can be implemented in hardware, or at one or more
The software module run on reason device is realized, or is implemented in a combination thereof.It will be understood by those of skill in the art that microprocessor or digital signal processor (DSP) can be used in practice to realize some or all functions of some modules according to an embodiment of the present invention.The present invention is also implemented as some or all program of device (for example, computer program and computer program product) for executing method as described herein.It is such to realize that program of the invention can store on a computer-readable medium, or may be in the form of one or more signals.Such signal can be downloaded from an internet website to obtain, and is perhaps provided on the carrier signal or is provided in any other form.
It should be noted that the above-mentioned embodiments illustrate rather than limit the invention, and those skilled in the art can be designed alternative embodiment without departing from the scope of the appended claims.In the claims, any reference symbol between parentheses should not be configured to limitations on claims.The present invention can be realized by means of including the hardware of several different elements and by means of properly programmed computer.In the unit claims listing several devices, several in these devices, which can be, is embodied by the same item of hardware.The use of word first, second, and third does not indicate any sequence.These words can be construed to title.
It is described above; only a specific embodiment of the invention or the explanation to specific embodiment; scope of protection of the present invention is not limited thereto; anyone skilled in the art is in the technical scope disclosed by the present invention; it can easily think of the change or the replacement, should be covered by the protection scope of the present invention.Protection scope of the present invention should be subject to the protection scope in claims.
Claims (21)
- A kind of electronic device, which is characterized in that the electronic device includes:First substrate, first substrate has each other relative first surface and second surface, the first surface of first substrate is formed with multiple photo sensing units of array distribution, and the second surface of first substrate is formed with multiple and each first bond pad being correspondingly arranged of the photo sensing unit；AndSecond substrate, second substrate have third surface, and multiple reading circuit units are formed in second substrate, and the third surface of second substrate is formed with multiple and each second bond pad being correspondingly arranged of the reading circuit unit；Wherein, each of each of the multiple reading circuit unit and the multiple photo sensing unit are respectively corresponding each other, the first bond pad for being correspondingly arranged with each of the photo sensing unit and eutectic bonding is connect each other with each second bond pad being correspondingly arranged of the reading circuit unit.
- Electronic device according to claim 1, which is characterized in that be formed with electrical connecting unit between each photo sensing unit and the first bond pad of corresponding setting.
- Electronic device according to claim 2, which is characterized in that the electrical connecting unit is through silicon via.
- Electronic device according to claim 1, which is characterized in that the photo sensing unit includes photo multiplier device.
- Electronic device according to claim 4, which is characterized in that the photo multiplier device includes avalanche photodide.
- Electronic device according to claim 1, which is characterized in that the reading circuit unit is complementary metal oxide semiconductor reading circuit.
- Electronic device according to claim 1, it is characterized in that, the eutectic bonding of first bond pad and second bond pad is any one of following: aluminium-germanium bonding, gold-germanium bonding, Au-Si bonding, Jin-tin bonding, indium-tin bonding, aluminium-silicon bonding, lead-tin bonding.
- Electronic device according to claim 1, which is characterized in that the third surface of second substrate is also formed with routing pad.
- Electronic device according to claim 1, which is characterized in that first substrate is silicon base or non-silicon-based bottom.
- Electronic device according to claim 9, which is characterized in thatFirst substrate is silicon base, and the wavelength of the photo sensing unit light beam detected includes 905 nanometers；Alternatively,First substrate is non-silicon-based bottom, and the wavelength of the photo sensing unit light beam detected includes 1550 nanometers.
- Electronic device according to claim 1, which is characterized in that the planar dimension of the photo sensing unit is identical with the planar dimension of the reading circuit unit.
- Electronic device according to claim 1, which is characterized in that the light incident side of each photo sensing unit be also formed with lenticule, anti-reflection film, in optical filter at least one of.
- Electronic device according to claim 1, it is characterized in that, the first surface of first substrate is also formed with multiple images sensor unit, multiple images sensor readout circuit unit is also formed in second substrate, each of described image sensor reading circuit unit and each of described image sensor unit are respectively corresponding each other.
- Electronic device according to claim 13, it is characterized in that, the second surface of first substrate is formed with multiple and each third bond pad being correspondingly arranged of described image sensor unit, the third surface of second substrate is formed with multiple with each fourth bond pad being correspondingly arranged of described image sensor reading circuit unit, the third bond pad being correspondingly arranged with each of described image sensor unit and eutectic bonding is connect each other with each fourth bond pad being correspondingly arranged of described image sensor reading circuit unit.
- Electronic device according to claim 13, it is characterized in that, the first surface of first substrate includes M × N block region, each region in M × N block region includes the first subregion and the second subregion not overlapped, the photoelectric sensing unit is located in first subregion, described image sensor unit is located in second subregion, and wherein M, N are positive integer, and M × N is greater than 1.
- Electronic device according to claim 13, which is characterized in that described image sensor unit is cmos image sensor.
- Electronic device according to claim 13, which is characterized in that each described image sensor unit includes one group of RGB unit or multiple groups RGB unit.
- A kind of range unit, which is characterized in that the range unit includes light-emitting device and reflection optical receiving device, in which:The light-emitting device is used to emit the optical signal for the field angle FOV for covering the range unit；The reflection optical receiving device includes the electronic device as described in any one of claim 1-17, the reflection optical receiving device is used to receive the optical signal and encounters the part signal that object under test back reflection is returned, and the range information of the object under test is obtained according to the part signal.
- Range unit according to claim 18, which is characterized in that the light-emitting device includes optical transmitting set and light expand unit.
- Range unit according to claim 19, which is characterized in that the smooth expand unit for being collimated, being expanded to the light that the optical transmitting set emit, even light, expand at least one of visual field and handle.
- A kind of electronic equipment including electronic device described in any one of claim 1-17, which is characterized in that the electronic equipment includes unmanned plane, autonomous driving vehicle or robot.
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| PCT/CN2017/099989 WO2019041250A1 (en) | 2017-08-31 | 2017-08-31 | Electronic device and distance measurement apparatus comprising same, and electronic equipment |
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