CN109904065A - The preparation method of heterojunction structure - Google Patents
The preparation method of heterojunction structure Download PDFInfo
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- CN109904065A CN109904065A CN201910129433.XA CN201910129433A CN109904065A CN 109904065 A CN109904065 A CN 109904065A CN 201910129433 A CN201910129433 A CN 201910129433A CN 109904065 A CN109904065 A CN 109904065A
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Abstract
The present invention provides a kind of preparation method of heterojunction structure, includes the following steps: to provide the first substrate, has ion implanting face；Ion implanting is carried out from ion implanting face, to form defect layer；Second substrate is provided, there is bonding face, bonding face is bonded with ion implanting face, obtains initial bonding structure；Initial bonding structure is heated based on the mode of local heating, with along the first substrate of defect layer released part, to form a substrate film on the second substrate, obtain include the second substrate and substrate film heterojunction structure.The present invention is based on the preparations that the mode of local heating realizes final heterojunction structure, local heating annealing process can reduce the thermal stress in bonding structure, improve the stability of heterogeneous bonding structure in preparation process, to reduce whole thermal stress and warpage of the heterogeneous bonding structure during annealing to strip, monocrystalline function film prepared by the present invention can be used for preparing high performance acoustics, optically and electrically device and various kinds of sensors part etc..
Description
Technical field
The invention belongs to technical field of semiconductor material preparation, more particularly to a kind of preparation method of heterojunction structure.
Background technique
Currently, preparing heterojunction structure using ion beam lift-off technology, such as heterogeneous integrated single-crystal film-substrate is that one kind has very much
The technical solution of prospect.Compared with traditional heterogeneous epitaxial technology, the monocrystal thin films etc. of the method preparation of ion beam removing have
Better crystal quality.In addition, this method is for the heterojunction structure that is mutually bonded, such as support substrate and function film, without extension
Therefore matched requirement almost may be implemented to prepare required film on any substrate.
However, the greatest problem in ion beam lift-off technology is to need to heat heterogeneous bonding structure to remove, because heterogeneous
Bonding material has coefficient of thermal expansion mismatch, and common method for annealing can introduce huge thermal stress very in heterogeneous bonding structure
To bonding structure fragmentation is caused, conventional annealing techniques are prepared in ion beam removing has great limitation in heterojunction structure.
Therefore, a kind of preparation method of heterojunction structure how is provided, category must in fact to solve the above problem in the prior art
It wants.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of preparation sides of heterojunction structure
Method, heating leads to problems such as bonding structure stress introduce even fragmentation in the ion beam stripping technology for solving the prior art.
In order to achieve the above objects and other related objects, the present invention provides a kind of preparation method of heterojunction structure, including such as
Lower step:
1) the first substrate is provided, and first substrate has ion implanting face；
2) ion implanting is carried out in face of first substrate from the ion implanting, is lacked with being formed in first substrate
Fall into layer；
3) the second substrate is provided, and second substrate has bonding face, and by the bonding face and the ion implanting
Face is bonded, to obtain initial bonding structure；And
4) the initial bonding structure is heated based on the mode of local heating, to be removed along the defect layer
Part first substrate, so that a part of first substrate is transferred on second substrate, in second lining
A substrate film is formed on bottom, obtain include second substrate and the substrate film heterojunction structure.
As a kind of optinal plan of the invention, in step 4), the local heating include heat transfer heating and radiation plus
At least one of heat.
As a kind of optinal plan of the invention, in step 4), the mode for carrying out the local heating includes that scan-type adds
Heat and at least one of stepped heating, wherein the path of the local heating include figures, fold-line-shaped route and
Any one in polar coordinates route.
As a kind of optinal plan of the invention, in step 4), the part is carried out as unit of scanning area unit and is added
Heat, wherein in carrying out the Local Heating Process, the initial bonding structure corresponding to each scanning area unit
The heating time for carrying out the heat treatment is identical.
As a kind of optinal plan of the invention, in step 4), the full-size of the scanning area unit between
Between 0.5mm-10mm；The heating time of corresponding each scanning area unit is between 1s-20s.
As a kind of optinal plan of the invention, further comprised the steps of: in step 4) when carrying out the local heating to not plus
Thermal region carries out cooling processing.
As a kind of optinal plan of the invention, the mode for carrying out the cooling processing includes using heat sink technology and active
At least one of cooling.
As a kind of optinal plan of the invention, in step 1), first substrate selected from silicon, silica, sapphire,
At least one of germanium, lithium niobate, lithium tantalate, silicon carbide, gallium nitride and aluminium nitride, in step 3), second substrate is selected from
In at least one of silicon, silica, sapphire, germanium, lithium niobate, lithium tantalate, silicon carbide, gallium nitride and aluminium nitride, and it is described
First substrate is different from second substrate.
As a kind of optinal plan of the invention, in step 4), carry out being included in progress during the heat treatment
The step of whole heating is carried out after the local heating.
As a kind of optinal plan of the invention, the initial bonding structure include central area and be located at the center
The overseas perimeter enclosed, wherein the step of carrying out the heat treatment includes: first by the way of the local heating to institute
Perimeter is stated to be heated, then using it is described integrally heat by the way of the central area is heated.
As described above, the preparation method of heterojunction structure of the invention, has the advantages that
The present invention provides a kind of preparation method of heterojunction structure, and in preparation of the invention, the mode based on local heating is real
The now preparation of final heterojunction structure, local heating annealing process can reduce the thermal stress in bonding structure, improve preparation process
In heterogeneous bonding structure stability, whole thermal stress of heterogeneous bonding structure during annealing to strip and stuck up to reduce
Song, in addition, monocrystalline function film prepared by the present invention can be used for preparing high performance acoustics, optically and electrically device and all kinds of
Senser element etc..
Detailed description of the invention
Fig. 1 is shown as the flow chart of heterojunction structure preparation process of the invention.
Fig. 2 is shown as providing the structural schematic diagram of the first substrate in heterojunction structure preparation of the present invention.
Fig. 3 is shown as carrying out the first substrate in heterojunction structure preparation of the present invention the structural schematic diagram of ion implanting.
Fig. 4 is shown as providing the structural schematic diagram of the second substrate in heterojunction structure preparation of the present invention.
Fig. 5 is shown as that first substrate and the second substrate bonding are formed initial bonding structure in heterojunction structure preparation of the present invention
Diagram.
Fig. 6 is shown as the schematic diagram for removing the first substrate of part in heterojunction structure preparation of the present invention.
Fig. 7 is shown as obtaining the schematic diagram of heterojunction structure in heterojunction structure preparation of the present invention.
Fig. 8 is shown as carrying out the structural schematic diagram of local heating in heterojunction structure preparation of the present invention.
Fig. 9 is shown as carrying out an example in the path of local heating in heterojunction structure preparation of the present invention.
Figure 10 is shown as carrying out another example in the path of local heating in heterojunction structure preparation of the present invention.
Figure 11 is shown as carrying out the schematic diagram for carrying out cooling processing while local heating in heterojunction structure preparation of the present invention.
Figure 12 (a) is shown as the shear stress schematic diagram in the heterojunction structure preparation of the prior art.
Figure 12 (b) is shown as the deformation schematic diagram in the heterojunction structure preparation of the prior art.
Figure 13 (a) is shown as the shear stress schematic diagram in the preparation of the heterojunction structure based on local annealing of the present invention.
Figure 13 (b) is shown as the deformation schematic diagram in the preparation of the heterojunction structure based on local annealing of the present invention.
Component label instructions
100 first substrates
100a ion implanting face
101 defect layers
102 substrate films
103 removing clouts
200 second substrates
200a bonding face
300 initial bonding structures
301 heterojunction structures
400 scanning area units
500 cooling processing units
S1~S4 step 1) is to step 4)
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Fig. 1 is please referred to Figure 13 (b).It should be noted that diagram provided in the present embodiment is only said in a schematic way
Bright basic conception of the invention, though only show in diagram with related component in the present invention rather than component when according to actual implementation
Number, shape and size are drawn, when actual implementation form, quantity and the ratio of each component can arbitrarily change for one kind, and
Its assembly layout form may also be increasingly complex.
Embodiment one:
As shown in Figure 1, the present invention provides a kind of preparation method of heterojunction structure, include the following steps:
1) the first substrate is provided, and first substrate has ion implanting face；
2) ion implanting is carried out in face of first substrate from the ion implanting, is lacked with being formed in first substrate
Fall into layer；
3) the second substrate is provided, and second substrate has bonding face, and by the bonding face and the ion implanting
Face is bonded, to obtain initial bonding structure；And
4) the initial bonding structure is heated based on the mode of local heating, to be removed along the defect layer
Part first substrate, so that a part of first substrate is transferred on second substrate, in second lining
A substrate film is formed on bottom, obtain include second substrate and the substrate film heterojunction structure.
Below in conjunction with the preparation method of the attached drawing heterojunction structure that the present invention will be described in detail.
Firstly, carrying out step 1) shown in S1 and Fig. 2 as shown in figure 1, providing the first substrate 100, and first substrate
100 have ion implanting face 100a.
As an example, first substrate 100 is selected from silicon, silica, sapphire, germanium, lithium niobate, tantalum in step 1)
At least one of sour lithium, silicon carbide, gallium nitride and aluminium nitride.
A kind of wafer substrate required for heterojunction structure is formed specifically, providing in this step, i.e., described first substrate
100, in one example, first substrate 100 includes single crystalline substrate, in addition, first substrate 100 can be piezoresistive material
Material, in one example, first substrate 100 can be selected from silicon, silica, sapphire, germanium, lithium niobate, lithium tantalate, carbonization
At least two laminated construction constituted in one of silicon, gallium nitride and aluminium nitride or above-mentioned material, naturally it is also possible to be
Other substrates well known to those skilled in the art that heterojunction structure can be formed.
Then, shown in S2 and Fig. 3 as shown in figure 1, step 2) is carried out, from the ion implanting face 100a to first lining
Bottom 100 carries out ion implanting, to form defect layer 101 in first substrate 100.
Specifically, in one example, the mode for carrying out the ion implanting includes hydrogen ion injection, He isotopic geochemistry and hydrogen
Helium ion inject altogether in any one.Wherein, the ion implanting is carried out, it can be in the default depth of first substrate 100
A defect layer 101 is formed at degree, so that subsequent can realize that material is removed at the defect layer, the predetermined depth refers to
The distance between the ion implanting face 100a of the implantation defect layer 101 and first substrate 100 that are formed after ion implanting,
The predetermined depth is set according to thin film heteroj structure prepared by actual needs, is infused in ion from the ion implanting face
Fashionable, the energy of ion implanting is enough that injection ion is made to reach the predetermined depth, and described lack is formed at the predetermined depth
Fall into layer.
In addition, the mode for carrying out the ion implanting can be the injection of single hydrogen ion or single helium ion,
The mode that can also be the total injection of two kinds of ions, when by the way of being injected altogether using two kinds of ions, the injection sequence of the two can
To adjust according to actual demand, i.e., the described hydrionic injection can carry out before the injection of the helium ion, also described
It carries out, can also be carried out simultaneously with the injection of the helium ion after the injection of helium ion.
In one example, single types of ion injection is carried out in the ion implanting face 100a, the ion injected is hydrogen (H)
Ion, the hydrogen ion can be in the subsequent principle for removing first substrate 100 can be to removing depths using hydrogen ion
The lattice of (the i.e. described implantation defect layer 101) forms destruction and realizes.That is, during carrying out ion implanting, ion
Micro-defects are formed into its atom gap, the implantation defect layer that ion implanting is formed is mostly nanoscale cavity blemish, and material exists
This interface still has stronger mechanical strength, and in subsequent treatment process, this slight imperfections is assembled collection and combined, and forms platform
The defect of type, and since the depth for forming the implantation defect layer is determined by the energy of ion implanting, and separation institute can be formed
The defect concentration needed is determined by the dosage of ion implanting, therefore, suitable ion implanting is selected during ion implanting
Dosage and ion implantation energy.In one example, first substrate 100 is lithium tantalate substrate, hydrionic ion implanting
Energy is 20keV~180keV, and the implantation dosage of hydrionic ion implanting is 5 × 1016cm-2~1 × 1017cm-2, injection temperature
Degree is room temperature.
In another example, the total injection of two types ion is carried out in the ion implanting face, the ion of injection is hydrogen
Ion and helium ion, wherein in a kind of mode, the hydrogen ion is used to form defect as described above, and the defect is described
It is in Gaussian Profile in defect layer；And the helium ion belongs to inert element, what the helium ion can be formed by the hydrogen ion
Platform defect capture simultaneously expands these flatbed defects by physical action and be combined with each other, and ultimately forms described in can separating
The slight crack of wafer substrate, and then promote the part wafer substrate to realize from defect density maximum and remove.In the injection face
It carries out hydrogen ion and helium ion injects altogether, the defect capture that the helium ion can be formed by the hydrogen ion, and then enter former
In sub- gap and apply pressure, is equivalent to inside the defect that the hydrogen ion has generated and is applied with an additional active force, it can
Removed with being effectively facilitated the part wafer substrate in the lower situation of ion implantation dosage, it can be effectively reduced from
The accumulated dose of son injection, and then manufacturing cycle is shortened, save production cost.
In an optional example, in order to enable the helium ion of injection is easy to be caught by the defect that the hydrogen ion is formed
It obtains, or the hydrogen ion of injection is easy to be captured by the defect that the helium ion is formed, the depth of the He isotopic geochemistry needs
It is same or similar with the depth of hydrogen ion injection, that is, need to guarantee that the range (Rp) of the helium ion is infused in the hydrogen ion
Near the range entered.In this example, the energy that the hydrogen ion and the helium ion inject altogether is 10keV~100keV, described
The ion beam current that hydrogen ion and the helium ion inject altogether is 1 μ A~100mA；What the hydrogen ion and the helium ion injected altogether
Implantation dosage is 2 × 1016cm-2~10 × 1016cm-2, the temperature that the hydrogen ion and the helium ion inject altogether is room temperature.
Then, shown in S3 and Fig. 4-5 as shown in figure 1, step 3) is carried out, the second substrate 200, and second substrate are provided
200 have bonding face 200a, and the bonding face 200a is bonded with the ion implanting face 100a, to obtain initial key
Close structure 300.
As an example, second substrate 200 is selected from silicon, silica, sapphire, germanium, lithium niobate, lithium tantalate, carbonization
At least one of silicon, gallium nitride and aluminium nitride, and first substrate 100 is different from second substrate 200
Specifically, in this step, a kind of the second substrate being bonded with 100 phase of the first substrate is provided, described second
Substrate 200 can be one of above-mentioned material layer, be also possible to the lamination knot that the above material layer of both above-mentioned and the two is constituted
Structure, it is of course also possible to be any substrate well known within the skill of those ordinarily skilled, such as in an optional example, second lining
Bottom 200 is selected as silicon substrate, and first substrate 100 is selected as lithium niobate substrate.
In addition, any one side for choosing second substrate 200 is used as the bonding face, its upper surface can be, it can also
To be its lower surface, select the upper surface of second substrate 200 as the bonding face 200a in this example, in addition, one
In optional example, obtaining the mode that the initial bonding structure 300 carries out the bonding includes normal temperature bonding, for example, it may be
Ultrahigh vacuum is bonded (Ultra-high vacuum bonding), i.e., first by first substrate and the second substrate table
The oxidation film in face is removed in ultra-high vacuum environment, then the first bonding face and the second bonding face after clean polish is made to reach foot
Enough close contacts are further furthered two by the intermolecular force (Van der Waals force or hydrogen bond) between adjacent materials interface
Distance between surface atom, to make interface directly form covalent bond, to realize first substrate 100 and second substrate
200 bonding.
Finally, step 4) is carried out shown in S4 and Fig. 6-11 as shown in figure 1, based on the mode of local heating to described initial
Bonding structure 300 is heated, with along the first substrate 100 described in 101 released part of defect layer, so that described first
A part of substrate 100 is transferred on second substrate 200, to form a substrate film on second substrate 200
102, obtain include second substrate 200 and the substrate film 102 heterojunction structure 300.
Specifically, realizing first substrate 100 along the removing of the defect layer 101 in the step, wherein base of the present invention
The removing of above-mentioned substrate, so-called local heating are realized in the mode of local heating, that is, are bonded in stripping process to initial
The heating method of structure not instead of not completely by the way of the unified heating of traditional entirety, based on the initial bonding structure in part by
The mode gradually heated, for example, with from the surface pair of the side opposite with the ion implanting face 100a of first substrate 100
For the initial bonding structure 300 is heated, the local heating is different from while heating to whole surface, but
It is heated in a part of region on this surface, then gradually moving heat source, realizes the removing of first substrate, wherein heat
The size of stress and distribution are related to the geometric dimension of heating structure, and the smaller then thermal stress of size is smaller, therefore, with conventional crystalline substance
Circle grade annealing is compared, and local heating can reduce heating structure, to reduce thermal stress, the present invention is limited using local heating
Stress is heated, and material is removed at the defect layer of injection.In addition, substrate film 102 is transferred to second lining
Behind bottom 200, remaining first substrate, i.e. removing clout 103 can be recycled, after treatment such as in Fig. 2
First substrate 100 continues to use.
As an example, the local heating includes at least one of heat transfer heating and radiant heating in step 4).
Specifically, in one example, the mode for carrying out the local heating can be to be carried out in thermo-conducting manner, preferably
For the mode of contact heat transfer, such as carried out using heat-conducting metal stick it is thermally conductive, such as metal copper rod, by metal bar and the initial key
It closes substrate 300 to be contacted, to transfer heat to the initial bonding structure, at this point, the metal bar is as local heating
Heating head；The local heating can also be carried out by the way of heat radiation, such as radiated by the way of infra-red radiation
Heating.
As an example, the mode for carrying out the local heating includes in scan-type heating and stepped heating in step 4)
At least one.
As an example, the path of the local heating includes appointing in figures, fold-line-shaped route and polar coordinates route
It anticipates one kind.
It is heated, is also possible to intermittent step specifically, can be when the local heating continuously scanning
Mode into formula is heated, so as to the uniformity for keeping overall structure to heat.In the local heating for carrying out aforesaid way
When, the heating of the initial bonding structure can be realized by heating head, wherein the heating head carries out the path of local heating
It can be and be scanned along circle line, as shown in figure 9, being also possible to be moved along fold-line-shaped route, in addition, as schemed
Shown in 10, the heating head can also be that carrying out the scanning of hairpin bend wire type in one example, can also be polar coordinates road certainly
Line sweeps movement
As an example, carrying out the local heating as unit of scanning area unit 400 in step 4), wherein carrying out
In the Local Heating Process, the initial bonding structure corresponding to each scanning area unit 400 carry out it is described plus
The heating time of heat treatment is identical.
As an example, the full-size of the scanning area unit 400 is between 0.5mm-10mm in step 4).
As an example, the heating time of corresponding each scanning area unit 400 is between 1s-20s.
Specifically, in one example, the local heating, the scanning area are carried out as unit of scanning area unit 400
Domain unit 400 refers to the corresponding region of the initial bonding structure, in one example, with from first substrate 100 and institute
State the opposite side ion implanting face 100a surface the initial bonding structure 300 is heated for, the scanning area
Domain unit refers to a territory element on the surface, as shown in Figure 8, wherein in one example, the scanning area unit
400 are also unanimously to the part that heating head is contacted with the initial bonding structure, and the mobile heating head is the scanning area list
Member is mobile, thus the heating of heating region required for realizing, in one example, during the scanning area unit is mobile,
It can be superimposed and be calculated by heterogeneity phantom, is i.e. the thermal field of each scanning area unit of simulation calculating, it is folded to carry out each thermal field
The calculating added, obtains the thermal field of each position, to control the movement of the scanning area unit, is further conducive to keep big
The preferable heating uniformity of area, the distance between adjacent center of the scanning area unit are less than the scanning area
Maximum sized the 1/2 of unit, wherein the full-size of the scanning area unit refers to the edge of the scanning area unit
The maximum value of line between any two points.In one example, the full-size of the scanning area unit 400 is between 0.5mm-
Between 10mm, it is preferably between 1mm-5mm.
Carry out at cooling non-heating region when the local heating as an example, further comprising the steps of: in step 4)
Reason, to reduce the local heating to the heat transfer of the non-heating region.
As an example, the mode for carrying out the cooling processing includes using at least one in heat sink technology and active cooling
Kind.
Specifically, the temperature that local heating also results in non-heating part increases since material itself has heat conductivity,
To increase thermal stress, being unfavorable for local heating reduces effective realization of thermal stress, in an optional example, is carrying out the office
It further include the process to cool down to the region for the bonding structure for not carrying out the local heating at this time during portion is heated,
To reduce the local heating to the heat transfer of the non-heating region, so as to so that the temperature of non-heating region keeps steady
It is fixed, to improve the reliability of technology and stability of the technical method.Wherein it is possible to above-mentioned cooling is carried out using heat sink technology,
Cooling fin or radiating block can be such as used, can be thermally conductive good metal block, such as copper billet is equivalent to passive cooling, certainly,
Heat can be guided in such a way that active cools down, here actively cooling refer to those of ordinary skill in the art will appreciate that
By way for the treatment of cooling structure and providing certain energy to guide heat, for example, using cold source or electricity refrigeration is continued
Etc. modes.Such as can in such a way that non-heating region is blowed or by cooling device actively to non-heating region into
Row cooling.In this example, due to keeping module with the temperature such as heat sink, the range of heating can be limited to, kept integrally-built
Temperature is stablized, and does not need to avoid temperature overshot using the method for ultrafast pulse as being heated laser, it is thus possible to increase part
Heating time reduces pulse controlled cost to increase production efficiency.
In addition, in one example, the device of device or active cooling of the cooling processing including heat sink technology is carried out, on
It states cooling processing and decorates any one side that can be set in the initial bonding structure 300, also can be set in the initial key
The two sides of structure is closed, the ipsilateral or different of the initial bonding structure can be arranged in above-mentioned apparatus with the heating head of local heating
Side, wherein the spacing between above-mentioned apparatus and the heating head can guarantee that carrying out part adds between 0.5cm-1.5cm
Stability in thermal process, in addition, in one example, above-mentioned cooling processing unit can also surround the heating head of local heating
Mode is arranged, for example, radiating block is located at the heating head of local heating in a ring when the device of cooling processing is selected as radiating block
Periphery, be further conducive to the uniform conductive of heat.
Wherein, the ion beam stripping process of functional material is that the process of an energy accumulation needs if annealing temperature is low
Extend annealing time and achievees the effect that removing；If annealing temperature is higher, function can be just realized in a relatively short period of time
The removing of material.It is generally believed that there are such relationships: T*ln (t) with annealing temperature T by the sur-face peeling time t of functional material
=const, this relational expression explanation, raising anneal temperature can exponentially reduce required annealing time, to reduce
The process time of film preparation simultaneously improves process efficiency.In the method for the invention, because local heating can reduce thermal stress,
So initial bonding structure can be heated to higher temperature and keep the integrality of structure, thus further decrease part plus
The time of thermal pulse accumulation is reduced annealing time, namely when being carried out local heating as unit of scanning area unit, can dropped
The low accumulated time that each scanning area unit is heated.
Specifically, in one example, the heating time of corresponding each scanning area unit 400 is between 1s-20s
Between, it may further select between 5s-15s, can be 8s, 10s or 12s.
As an example, in step 4), carry out further include during the heat treatment carry out the local heating it
The step of carrying out whole heating afterwards.
As an example, the initial bonding structure includes central area and the outside area positioned at the central area periphery
Domain, wherein the step of carrying out the heat treatment includes: first to be carried out by the way of the local heating to the perimeter
Heating, then using it is described integrally heat by the way of the central area is heated.
Embodiment two:
In addition, the present embodiment two and the difference of embodiment one are the present invention also provides an embodiment two, in step 4),
Be included in during the heat treatment and carry out the step of local heating carries out whole heating later, that is, further includes
Simultaneously using part first substrate desquamation is realized by the way of monoblock type heating the step of, i.e., using local heating annealing with it is whole
The optimization method that body heating anneal combines, along the first substrate described in the defect layer released part, so that first substrate
A part be transferred on second substrate, to form a substrate film on second substrate, obtain including described
The heterojunction structure of two substrates and the substrate film, the problems such as so as to take into account production efficiency and cost, other steps can be with
Reference implementation example one is not carried out the size of heating region by the process shrink of local heating first, that is, reduced in one example
The size for the initial bonding structural region for needing to heat, the thermal stress master of double-layer structure theoretical according to the thermal stress of double-layer structure
It is distributed in the edge of structure, and stress value increases with the increase of size, therefore, reduces the size by local heating,
The size for reducing bonding structure can reduce the thermal stress of whole bonding structure, can be first using part in an optional example
The edge of the method para-linkage structure of annealing carries out annealing to strip and gradually anneals to wafer inner ring, is gradually reduced bonding size
Come, i.e., local heating is carried out to the perimeter；Then, when being reduced in size to for bonding structure can undergo integrally annealed work
When skill, remaining unstripped area is utilized into the removing transfer of integrally annealed technology.It in one example, can be with the initial bonding
On the basis of the surface opposite with the ion implanting face of first substrate of structure, it is divided into central area and perimeter,
In one example, central area is rounded, and perimeter is in circular ring shape, the side using this exemplary local heating and integrally heated
Formula carries out the heat treatment, to realize the removing of first substrate.
Beneficial effect in order to further illustrate the present invention as illustrated by figs. 12-13 can be with using the method for finite element simulation
The difference of analysis conventional integrally annealed and local heating annealing, wherein the bonding structure model used is 4 inches of lithium niobates and silicon
Normal temperature bonding structure, Figure 12 (a) and Figure 12 (b) are respectively indicated as shearing force distribution and deformation using traditional heating anneal
Diagram, Figure 13 (a) and Figure 13 (b) are respectively indicated as the diagram of the shearing force distribution and deformation using heating anneal of the invention,
Specifically, under normal circumstances, the annealing temperature that the sur-face peeling of lithium niobate needs is about 230 DEG C, and 4 inches of bonding structure
At 140 DEG C or so because shearing force is excessive just chipping, assume that bonding structure is not chipping at 200 DEG C by analysis,
And utilize size two kinds of annealed structures of qualitative comparison of its deformation and shearing force, wherein Tu12Zhong is 230 DEG C using temperature
Heat source carries out contact heating, using in traditional whole heating anneal, it can be seen that shear stress is distributed mainly on bonding junction
The edge of structure, the shear stress maximum value extracted are up to 0.85GPa, because thermal stress leads to bonding structure, appearance is very big
Deformation, the largest deformation amount of the central point extracted are 5.03mm；In Figure 13, using 230 DEG C of heat source carry out offices of 1mm size
Portion's annealing and peripheral region is using the technologies such as heat sink that the temperature remains within the normal range, then shear stress is distributed mainly on around heating region, is extracted
Shear stress maximum value out only has 0.12GPa, and the largest deformation amount extracted at this time only has 0.06mm.
In addition, in one example, by way of simulation calculation, assessing great annealing temperature moves back local heating
Shear stress or deformation in fire reach level identical with traditional entirety heating technique, so as to obtain carrying out the part
The maximum temperature critical value of heating carries out the heating temperature of the local heating less than 630 in the examples described above, in step 4)
DEG C, when annealing temperature is up to 630 DEG C, shear stress maximum value is 0.81GPa, and deformation extreme value is 0.45mm.Selection carries out institute
The heating temperature of local heating is stated less than 630 DEG C, such as selects 500 DEG C or 230 DEG C, to be conducive to be further ensured that part adds
Shear stress or deformation in thermal annealing are less than tradition whole the case where heating.
In conclusion the present invention provides a kind of preparation method of heterojunction structure, include the following steps: 1) to provide the first lining
Bottom, and first substrate has ion implanting face；2) ion implanting is carried out in face of first substrate from the ion implanting,
To form defect layer in first substrate；3) the second substrate is provided, and second substrate has bonding face, and will be described
Bonding face is bonded with the ion implanting face, to obtain initial bonding structure；And 4) based on the mode pair of local heating
The initial bonding structure is heated, with along the first substrate described in the defect layer released part, so that described first
A part of substrate is transferred on second substrate, to form a substrate film on second substrate, obtains including institute
State the heterojunction structure of the second substrate and the substrate film.Through the above scheme, in preparation method of the invention, added based on part
The mode of heat realizes the preparation of final heterojunction structure, and local heating annealing process can reduce the thermal stress in bonding structure, mention
The stability of heterogeneous bonding structure in high preparation process, to reduce entirety of heterogeneous bonding structure during annealing to strip
Thermal stress and warpage, in addition, monocrystalline function film prepared by the present invention can be used for preparing high performance acoustics, optically and electrically
Device and various kinds of sensors part etc..So the present invention effectively overcomes various shortcoming in the prior art and has high industrial benefit
With value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (10)
1. a kind of preparation method of heterojunction structure, which comprises the steps of:
1) the first substrate is provided, and first substrate has ion implanting face；
2) ion implanting is carried out in face of first substrate from the ion implanting, to form defect in first substrate
Layer；
3) provide the second substrate, and second substrate has a bonding face, and by the bonding face and the ion implanting face into
Line unit closes, to obtain initial bonding structure；And
4) the initial bonding structure is heated based on the mode of local heating, along the defect layer released part
First substrate, so that a part of first substrate is transferred on second substrate, on second substrate
Form a substrate film, obtain include second substrate and the substrate film heterojunction structure.
2. the preparation method of heterojunction structure according to claim 1, which is characterized in that in step 4), the local heating
Including at least one of heat transfer heating and radiant heating.
3. the preparation method of heterojunction structure according to claim 1, which is characterized in that in step 4), carry out the part
The mode of heating includes at least one of scan-type heating and stepped heating, wherein the path of the local heating includes
Any one in figures, fold-line-shaped route and polar coordinates route.
4. the preparation method of heterojunction structure according to claim 1, which is characterized in that in step 4), with scanning area list
Member is that unit carries out the local heating, wherein in carrying out the Local Heating Process, to each scanning area unit
The heating time that the corresponding initial bonding structure carries out the heat treatment is identical.
5. the preparation method of heterojunction structure according to claim 4, which is characterized in that in step 4), the scanning area
The full-size of unit is between 0.5mm-10mm；The heating time of corresponding each scanning area unit between
Between 1s-20s.
6. the preparation method of heterojunction structure according to claim 1, which is characterized in that further comprised the steps of: in step 4) into
Cooling processing is carried out to non-heating region when the row local heating.
7. the preparation method of heterojunction structure according to claim 6, which is characterized in that carry out the mode of the cooling processing
Including using heat sink technology and actively at least one of cooling.
8. the preparation method of heterojunction structure according to claim 1, which is characterized in that in step 1), first substrate
Selected from least one of silicon, silica, sapphire, germanium, lithium niobate, lithium tantalate, silicon carbide, gallium nitride and aluminium nitride, step
It is rapid 3) in, second substrate be selected from silicon, silica, sapphire, germanium, lithium niobate, lithium tantalate, silicon carbide, gallium nitride and nitrogen
Change at least one of aluminium, and first substrate is different from second substrate.
9. the preparation method of heterojunction structure described in any one of -8 according to claim 1, which is characterized in that in step 4),
Be included in during the heat treatment and carries out the step of local heating carries out whole heating later.
10. the preparation method of heterojunction structure according to claim 9, which is characterized in that the initial bonding structure includes
Central area and perimeter positioned at the central area periphery, wherein the step of carrying out the heat treatment includes: first to adopt
The perimeter is heated with the mode of the local heating, then using it is described integrally heat by the way of to the center
It is heated in region.
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