CN109896498A - A kind of parallel-connection structure and processing method of embedded channel micro-cantilever - Google Patents

A kind of parallel-connection structure and processing method of embedded channel micro-cantilever Download PDF

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CN109896498A
CN109896498A CN201910036305.0A CN201910036305A CN109896498A CN 109896498 A CN109896498 A CN 109896498A CN 201910036305 A CN201910036305 A CN 201910036305A CN 109896498 A CN109896498 A CN 109896498A
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micro
cantilever
channel
embedded channel
layer
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郝秀春
蒋纬涵
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Jiangsu University
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Jiangsu University
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Abstract

The invention discloses a kind of parallel-connection structure of embedded channel micro-cantilever and processing methods, belong to the field MEMS.The present invention is to form microchannel in the inside of micro-cantilever, and micro-fluidic chip is integrated in micro-cantilever beam sensor, and the freedom degree of two or more micro-cantilever is connected.The parallel-connection structure of such micro-cantilever is to be manufactured using a kind of based on the processing method of SON structure, can be formed simultaneously microchannel and cover board.Combine simultaneously with microfluidic chip technology, the separation, monitoring and detection of micro-nano particle, cell etc. may be implemented.Micro-cantilever overall structure includes: fixing end, embedded channel, the substrate in embedded channel and the cover board and the entrance and exit in embedded channel of micro-cantilever.The present invention is a kind of novel micro cantilever structure, and processing method is more succinct, microfluidic chip technology is combined with micro-cantilever beam sensor technology, application field greatly increases, while detection accuracy also greatlys improve.

Description

A kind of parallel-connection structure and processing method of embedded channel micro-cantilever
Technical field
Present invention relates generally to the field MEMS in integrated circuit (Micro-Electro-Mechanical System), Refer in particular to micro-cantilever device, the processing method of a kind of novel embedded channel-type.
Background technique
With the fast development of nanometer technique, a kind of novel cross discipline micro electro mechanical system (MEMS) technology-MEMS technology is obtained Development at full speed is arrived.To generation nineteen ninety, using micropressure sensor and micro-acceleration sensor as the micro-electro-mechanical sensors of representative By low cost, small size, high performance advantage, become the mainstream of sophisticated sensor development.More successful micro-electro-mechanical sensors, As resonance type pressure sensor and force balance type capacitor micro-acceleration sensor all use micro cantilever structure.Micro-cantilever dress It sets as a kind of one of simplest MEMS device, and constructs the basic unit of other complicated MEMS device, the MEMS of all The advantages of technology, all emerges from it, to the research of micro-cantilever also more deep.
Traditional micro-cantilever beam sensor is predominantly rectangular-shaped, and one layer is bonded on the micro-cantilever skeleton of monocrystalline silicon specifically The adsorption layer of property, using the Specific adsorption of molecule by tested Molecular Adsorption to adsorption layer, to achieve the purpose that detection molecules. But this micro-cantilever, which is disadvantageous in that, to detect the detectable substance of liquid phase, and can not be worked in liquid environment In.The target of micro-fluidic chip is function entire laboratory, including sampling, dilution, reagent adding, reaction, separation, detection etc. It is integrated on microchip, is the emphasis of current micro-total analysis system field development, but its characteristic for lacking sensing.
Application No. is a kind of " micro-cantilever for weighing DNA molecular quality is disclosed in 2016104117634 patent document Device ", the micro-cantilever device upper layer proposed have required for weighing DNA adsorption layer, free end upper and lower sides respectively have one it is micro- Displacement sensor adsorbs weighed DNA molecular by DNA adsorption layer, so that micro-cantilever free end is made to bend deformation, Deformation quantity is detected by micro-displacement sensor again.But processing of this micro-cantilever device on DNA molecular adsorption layer is excessively It is cumbersome, and DNA molecular adsorption layer adsorption of DNA molecule is easy to appear error, the detection accuracy of micro-displacement sensor is not high enough, is easy Generate biggish error.
Summary of the invention
In order to which the function of micro-fluidic chip and micro-cantilever sensing characteristics to be combined into one, a kind of novel embed has been invented Channel-type silicon micro-cantilever.It include: fixing end 102, the embedded channel 105, the substrate and cover board for embedding channel of micro-cantilever 103 and embedded channel microfluidic inlet 101 and microfluidic outlet port 100.It wherein embeds channel and cover board is structure as a whole. Micro- beam can be processed with array, be used separately as test beam and with reference to beam.The Liang Kewei uniform beam.The micro-cantilever may be implemented Separation, the detection of microfluid;The quality testing of micro-nano particle;Quality testing and the monitoring of upgrowth situation of biological cell etc., It can be to be detected in liquid environment.
It is another object of the present invention to provide a kind of processing methods of embedded channel-type micro-cantilever.Using SOI (Silicon On Insulator) wafer processes embedded channel-type micro-cantilever, mainly includes photoetching, etching, annealing processing Processing, release structure sheaf.
The technical solution of the micro-cantilever of a kind of embedded channel-type of the invention are as follows: including the fixing end (102) being connected And beam, the beam at least two, the Liang Junyou fixing end (102), beam, which can interconnect, to be separately configured;The freedom of each beam End links together;Intersect in the free end of beam the inner passage of each beam;The bottom of the beam is substrate, and the upper surface of beam is Cover board (103) is embedded channel (105) between substrate and cover board (103), it is micro- at least provided with embedded channel to embed channel (105) Fluid inlet (101), the substrate, cover board (103) and fixing end (102) are structure as a whole.
Further, channel (105) are entirely embedded as needed at "-" type perhaps rectangular channel or circular passage, or Person's serpentine channel perhaps tree-shaped type channel or cross bifurcated passage.
Further, the beam is uniform beam or non-uniform beam.
Further, when fixing end (102) are bilateral, the beam of the micro-cantilever of multiple embedded channel-types is arranged in parallel, beam Successively be connected the parallel micro-cantilever parallel-connection structure array for embedding channel-type of composition between the fixing end (102) at both ends.
Further, when fixing end (102) is unilateral side or is annular fixing end, increase the quantity of beam as needed, into And constitute the micro-cantilever array of unilateral embedded channel-type or the micro-cantilever parallel-connection structure array of the embedded channel-type of annular.
The technical solution of method of the invention are as follows: a kind of processing method of the micro-cantilever of embedded channel-type, including it is following Step:
Step 1, according to requiring, design the structure snd size in channel and beam, choose suitable SOI wafer, SOI wafer structure It mainly include single crystal layer-of-substrate (202), SiO2Buried oxide layer (201) and monocrystal silicon structure layer (200);And by monocrystalline substrate Layer (202) carries out the oxide layer that oxidation forms single crystal layer-of-substrate (202);
Step 2, the oxide layer photoetching to SOI wafer single crystal layer-of-substrate (202) are prepared for release cantilever beam;
Step 3, the oxide layer for etching SOI wafer substrate layer, for etching single crystal layer-of-substrate (202) windowing;
Step 4 carries out a photoetching to monocrystal silicon structure layer (200), and in order to form cantilever beam, mask graph is according to cantilever The outer profile of beam;
Step 5 carries out plasma dry etch to monocrystal silicon structure layer (200), and etching depth requires to be less than monocrystalline silicon The thickness of structure sheaf (200);
Step 6 carries out secondary photoetching to monocrystal silicon structure layer (200), this step is to form embedded channel to prepare, mask Figure is small rectangular array;
Step 7 carries out secondary plasma dry etching to monocrystal silicon structure layer (200), etches into SiO2Buried oxide layer (201) stop when, form silicon trench;
Step 8, high annealing make annealing treatment the monocrystal silicon structure layer (200) for forming silicon trench, can be in structure sheaf Inside form required microchannel, and be formed simultaneously cover board, anneal and continue the regular hour;
Step 9 carries out plasma dry etch to SOI wafer substrate layer (202);
Step 10, micro-cantilever release.
Further, anneal environment is under hydrogen environment or high vacuum, and annealing temperature is 1130 ± 30 DEG C, annealing time 10 Between minute to 20 minutes.
Compared with prior art, the present invention having following advantage:
(1) traditional micro-cantilever is to cover one layer of adsorption layer in the upper surface of micro-cantilever, to reach adsorbed target point The purpose of son, such method are only used for detecting solid or gaseous measured object;And embedded channel-type micro-cantilever can Solid measured object is mixed in the microfluid of liquid phase, greatly extends the field of micro-cantilever detection measured object, while Measured object is enabled to adequately to be reacted or separated.The structure novel of micro-cantilever adds measured object to inhale with traditional substrate The micro-cantilever of attached layer is compared, and embedded channel-type micro-cantilever is by measured object from the upper surface of micro-cantilever in the form of microfluid It is transferred in the embedded microchannel of micro-cantilever, so that detection is more flexible.Meanwhile the embedded channel of micro-cantilever can be designed The microchannel of various shapes, such as it is rectangle, U-shaped, tree-shaped type, snakelike, to achieve the purpose that detection.
(2) embedding the processing of channel-type micro-cantilever is the processing method based on a kind of SON structure.The method mainly includes Three photoetching, annealing and post-processing steps, compared with traditional micro-cantilever processing, the step of reducing bonding, greatly Reduce manufacturing procedure.
(3) it embeds channel-type micro-cantilever and is applicable to many fields, for example particulate or living cells are carried out Weighing.Go out corresponding monocrystalline silicon material in the front end synchronous processing of micro-cantilever using the processing method of embedded channel-type micro-cantilever The micro-fluidic chip of material utilizes embedded channel-type micro-cantilever for carrying out separation control, hybrid reaction to microfluid followed by It is detected, to reach the innovation that control and detection are integrated.
(4) processing method makes substrate, cover board and fixing end be structure as a whole, compact-sized, and performance is more stable, simultaneously Substantially increase measurement accuracy;Fixing end of the invention be designed as needed unilateral fixing end perhaps bilateral fixing end or For annular fixing end, free end intersects at an endpoint;It can adapt to mixing microfluid occasion, or micro fluid reaction be provided Occasion, have a extensive future, practicability and applicability are stronger.
Detailed description of the invention
Fig. 1 is the micro-cantilever that bilateral embeds channel.It (a) is uniform beam;It (b) is non-uniform beam;
Fig. 2 is the micro-cantilever array that parallel bilateral embeds channel.
Fig. 3 is the micro-cantilever in the embedded channel of unilateral two beams.
Fig. 4 is the micro-cantilever in the embedded channel of unilateral three beams.
Fig. 5 is a kind of micro-cantilever array figure in embedded channel of annular.
Fig. 6 is the process flow for making the micro-cantilever in embedded channel.
In figure, 100- embeds channel microfluidic inlet 1;101- embeds channel microfluidic inlet 2;102- micro-cantilever is consolidated Fixed end;103- cover board;105- embeds channel;200-monocrystal silicon structure layers;201-SiO2 buried oxide layers;202-monocrystalline substrates Layer;
Specific embodiment
The present invention is described in further details below with reference to the drawings and specific embodiments, but protection scope of the present invention It is not limited to this.
As shown in Figs. 1-5, a kind of micro-cantilever of embedded channel-type, it is described including the fixing end (102) being connected and beam Beam at least two, the Liang Junyou fixing end (102), beam, which can interconnect, to be separately configured;The free end of each beam is connected to Together;Intersect at the free end (i.e. the free end of cantilever beam) of beam the inner passage of each beam;The bottom of the beam is substrate, beam Upper surface be cover board (103), be embedded channel (105) between substrate and cover board (103), embed channel (105) at least provided with Embedded channel microfluidic inlet (101), the substrate, cover board (103) and fixing end (102) are structure as a whole.
The outlet of microfluid is not required, and the position of entrance and exit can according to need reasonable Arrangement.
Beam in Fig. 1 (a) is uniform beam, and the beam in Fig. 1 (b) is non-uniform beam (the plan view shape triangle of the beam Shape).
As shown in Fig. 2, the beam of the micro-cantilever of multiple embedded channel-types is arranged in parallel when fixing end (102) are bilateral, Successively be connected the parallel micro-cantilever array for embedding channel-type of composition between the fixing end (102) at beam both ends.Embedded channel-type Micro-cantilever array is used separately as test beam and with reference to beam.
In order to increase tested microsome amount detection, the length in channel can be increased;Channel 105 will entirely be embedded according to need It is designed to "-" type (such as Fig. 1) perhaps rectangular channel perhaps circular passage or serpentine channel;It can also be micro- according to screening Entire embedded channel 105 is designed to that tree-shaped type channel or cross bifurcated are logical by the difference of flow rate in fluid as needed Road etc..
As shown in Figure 3-4, the fixing end 102 is unilateral fixing end, increases the quantity of beam as needed, when beam is multiple When, and then constitute the micro-cantilever parallel-connection structure array of unilateral embedded channel-type.
As shown in figure 5, increasing the quantity of beam as needed when fixing end 102 is annular fixing end, when beam is multiple When, constitute the micro-cantilever parallel-connection structure array of the embedded channel-type of annular.
It is shown in Figure 6, a kind of processing method of the micro-cantilever of embedded channel-type proposed by the invention.This processing side Detailed process is as follows for method:
A kind of processing method of embedded channel-type micro-cantilever based on SOI technology of the invention, key step are as follows:
(a) SOI wafer backside oxide;(b) SOI wafer single crystal layer-of-substrate photoetching;(c) etching SOI wafer monocrystalline silicon lining The oxide layer of bottom;(d) photoetching is carried out to the monocrystal silicon structure layer of SOI wafer;(e) to the monocrystal silicon structure of SOI wafer Layer carries out plasma dry etch;(f) secondary photoetching is carried out to the monocrystal silicon structure layer of SOI wafer;(g) to SOI wafer Monocrystal silicon structure layer carries out secondary plasma dry etching;(h) high-temperature vacuum is annealed;(i) to the monocrystalline substrate of SOI wafer Layer carries out plasma dry etch;(j) double strutbeam releases.Specific process are as follows:
Step 1, according to requiring, design the structure snd size in channel and beam, choose suitable SOI wafer, SOI wafer structure It mainly include single crystal layer-of-substrate 202, SiO2Buried oxide layer 201 and monocrystal silicon structure layer 200;And by single crystal layer-of-substrate 202 Carry out the oxide layer that oxidation forms single crystal layer-of-substrate 202;As shown in Fig. 6 step (a).
Step 2, the oxide layer photoetching to SOI wafer single crystal layer-of-substrate 202 are prepared for release cantilever beam;As Fig. 6 is walked Suddenly shown in (b).
Step 3, the oxide layer for etching SOI wafer substrate layer open a window for etching single crystal layer-of-substrate 202;Such as Fig. 6 step (c) shown in.
Step 4 carries out a photoetching to monocrystal silicon structure layer 200, and in order to form cantilever beam, mask graph is according to cantilever beam Outer profile.
Step 5 carries out plasma dry etch to monocrystal silicon structure layer 200, and etching depth requires to be less than monocrystalline silicon knot The thickness of structure layer (200).
Step 6 carries out secondary photoetching to monocrystal silicon structure layer 200, this step is to form embedded channel, such as Fig. 6 step (d) It is shown.The figure being lithographically formed is spacedly distributed for rectangular array, is spaced having a size of 500nm-1 μm.
Step 7 carries out secondary plasma dry etching to monocrystal silicon structure layer 200, etches into SiO2When buried oxide layer 201 Stop;Silicon trench is formed, as shown in Fig. 6 step (e).
Step 8, high annealing make annealing treatment the monocrystal silicon structure layer 200 for forming silicon trench, can be in structure sheaf Microchannel required for inside is formed, and it is formed simultaneously cover board, it anneals and continues the regular hour;The preferred anneal environment of the present embodiment For under hydrogen environment or high vacuum, annealing temperature is 1130 ± 30 DEG C, and annealing time is between 10 minutes to 20 minutes, production Effect is best, and production precision is high, meets test requirements document.As shown in Fig. 6 step (f).High temperature makes 200 surface of silicon structural layer and ditch The silicon atom of slot upper end will migrate, so that flute surfaces energy minimizes.At this point, the lead angle on groove starts to be rounded, it Silicon trench starts slowly to close and formed embedded channel 105 afterwards, and intermediate large-sized groove, the microfluid in such as embedded channel into The groove that mouth and the corresponding groove of entrance, step 5 are formed will not link together after the anneal with other silicon wafers.When ditch groove depth When width is than reaching certain proportion, the silicon atom migration of groove upper end will make groove upper end form complete cover board 103.
Step 9 carries out plasma dry etch to SOI wafer substrate layer 202;As shown in Fig. 6 step (g).
Step 10, micro-cantilever release.As shown in Fig. 6 step (h).
The application field of the embedded channel-type micro-cantilever has very much, is introduced for weighing single microcell interior The application of embedding channel-type micro-cantilever.
Embedded channel micro-cantilever in the present invention, use occasion include: when the microfluid containing nanoparticle or cell It flows into microchannel, the shape and intrinsic frequency of double strutbeams can change, and be changed by the change in displacement or frequency that detect beam The quality of nanoparticle or cell can be surveyed;If cell enters in the microchannel of micro-cantilever, micro-cantilever can be continuously detected The characteristic variations of beam can measure the growth change situation of cell;A variety of particle mixing microfluids can design suitable micro- logical Road separates particle in microchannel, and then detect etc..
Processing method in the present invention makes substrate, cover board and fixing end be structure as a whole, compact-sized, and performance is more steady It is fixed, while substantially increasing measurement accuracy;Fixing end of the invention is designed as unilateral fixing end as needed or bilateral is fixed End, or be annular fixing end, free end intersects at an endpoint;It can adapt to mixing microfluid occasion, or provide micro- The occasion of fluid reaction, has a extensive future, and practicability and applicability are stronger.
The microchannel and cover board in the present invention are formed using that will carve fluted single crystal silicon material annealing processing, Single crystal silicon material has biggish chemical activity under high temperature fused state, and silicon atom can occur in high temperature hydrogenation annealing process Migration and recrystallization, to be formed simultaneously microchannel and cover board, without carrying out other bonding technologies, greatly reduce processing work Sequence.
To sum up, the invention discloses a kind of parallel-connection structure of embedded channel micro-cantilever and processing methods, belong to MEMS neck Domain.Embedded channel-type micro-cantilever parallel-connection structure and traditional micro-cantilever in the present invention is different, is in micro-cantilever Inside form microchannel, micro-fluidic chip is integrated in micro-cantilever beam sensor, and two or more micro-cantilever Freedom degree is connected.The parallel-connection structure of such micro-cantilever is manufactured based on the processing method of SON structure using a kind of, can be with It is formed simultaneously microchannel and cover board.Combine simultaneously with microfluidic chip technology, point of micro-nano particle, cell etc. may be implemented From, monitoring and detection.Micro-cantilever overall structure include: the fixing end of micro-cantilever, embedded channel, embedded channel substrate and Cover board and the entrance and exit in embedded channel.The present invention is a kind of novel micro cantilever structure, and processing method is simpler It is clean, microfluidic chip technology is combined with micro-cantilever beam sensor technology, application field greatly increases, while detection accuracy It greatlys improve.
Although an embodiment of the present invention has been shown and described, it will be understood by those skilled in the art that: not A variety of change, modification, replacement and modification can be carried out to these embodiments in the case where being detached from the principle of the present invention and objective, this The range of invention is defined by the claims and their equivalents.

Claims (7)

1. a kind of micro-cantilever parallel-connection structure of embedded channel-type, which is characterized in that including the fixing end (102) that is connected and Beam, the beam at least two, the Liang Junyou fixing end (102), beam, which can interconnect, to be separately configured;The free end of each beam It links together;Intersect in the free end of beam the inner passage of each beam;
The bottom of the beam is substrate, and the upper surface of beam is cover board (103), is embedded channel between substrate and cover board (103) (105), channel (105) are embedded at least provided with embedded channel microfluidic inlet (101), the substrate, cover board (103) and fixing end (102) it is structure as a whole.
2. a kind of micro-cantilever parallel-connection structure of embedded channel-type according to claim 1, which is characterized in that entire embedded At "-" type, perhaps perhaps perhaps serpentine channel or tree-shaped type are logical for circular passage for rectangular channel as needed in channel (105) Road or cross bifurcated passage.
3. a kind of micro-cantilever parallel-connection structure of embedded channel-type according to claim 1, which is characterized in that the beam is Uniform beam or non-uniform beam.
4. a kind of micro-cantilever parallel-connection structure of embedded channel-type according to claim 1, which is characterized in that work as fixing end (102) be bilateral when, the beam of the micro-cantilever of multiple embedded channel-types is arranged in parallel, between the fixing end (102) at beam both ends according to Secondary connected composition embeds the micro-cantilever parallel-connection structure array of channel-type in parallel.
5. a kind of micro-cantilever parallel-connection structure of embedded channel-type according to claim 1, which is characterized in that work as fixing end (102) for unilateral or annular fixing end when, increase the quantity of beam as needed, and then constitute the micro- outstanding of unilateral embedded channel-type The micro-cantilever parallel-connection structure of arm beam array or the embedded channel-type of annular.
6. a kind of processing of the micro-cantilever parallel-connection structure of embedded channel-type described in a kind of -5 any one according to claim 1 Method, which comprises the following steps:
Step 1, according to requiring, design the structure snd size in channel and beam, choose suitable SOI wafer, SOI wafer structure is main Including single crystal layer-of-substrate (202), SiO2Buried oxide layer (201) and monocrystal silicon structure layer (200);And by single crystal layer-of-substrate (202) oxide layer that oxidation forms single crystal layer-of-substrate (202) is carried out;
Step 2, the oxide layer photoetching to SOI wafer single crystal layer-of-substrate (202) are prepared for release cantilever beam;
Step 3, the oxide layer for etching SOI wafer substrate layer, for etching single crystal layer-of-substrate (202) windowing;
Step 4 carries out a photoetching to monocrystal silicon structure layer (200), and in order to form cantilever beam, mask graph is according to cantilever beam Outer profile;
Step 5 carries out plasma dry etch to monocrystal silicon structure layer (200), and etching depth requires to be less than monocrystal silicon structure The thickness of layer (200);
Step 6 carries out secondary photoetching to monocrystal silicon structure layer (200), this step is to form embedded channel to prepare, mask graph For small rectangular array;
Step 7 carries out secondary plasma dry etching to monocrystal silicon structure layer (200), etches into SiO2When buried oxide layer (201) Stop, forming silicon trench;
Step 8, high annealing make annealing treatment the monocrystal silicon structure layer (200) for forming silicon trench, can be in structure sheaf Portion forms required microchannel, and is formed simultaneously cover board, anneals and continues the regular hour;
Step 9 carries out plasma dry etch to SOI wafer substrate layer (202);
Step 10, micro-cantilever release.
7. a kind of processing method of the micro-cantilever parallel-connection structure of embedded channel-type according to claim 6, feature exist In anneal environment is under hydrogen environment or high vacuum, and annealing temperature is 1130 ± 30 DEG C, and annealing time is 10 minutes to 20 minutes Between.
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