CN109856922B - Immersion fluid control device, immersion lithography system and recovery control method - Google Patents
Immersion fluid control device, immersion lithography system and recovery control method Download PDFInfo
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Abstract
The invention provides an immersion fluid control device, an immersion lithography system and a recovery control method; the control device comprises a complete machine control unit and a recovery control unit; the whole machine control unit is used for sending the motion information of the silicon wafer stage to the recovery control unit; the motion information of the silicon wafer stage is used for representing the motion track of the silicon wafer stage in the photoetching process; and the recovery control unit is used for calculating and obtaining the gas-liquid recovery flow rate in the photoetching process according to the movement information of the silicon wafer stage sent by the complete machine control unit, and controlling the gas-liquid recovery mechanism to recover gas and liquid according to the gas-liquid recovery flow rate in the photoetching process.
Description
Technical Field
The invention relates to the field of photoetching, in particular to an immersion fluid control device, an immersion photoetching system and a recovery control method.
Background
Immersion lithography replaces the air counterpart of conventional dry lithography by filling a liquid (or fluid with a higher refractive index than air) between the exposure lens and the silicon wafer. Since the refractive index of the liquid is greater than that of air, the effective numerical aperture of the system is increased, and thus smaller feature line widths and increased depth of focus can be achieved.
Fig. 1 is a schematic structural diagram of an immersion lithography apparatus in the related art, and referring to fig. 1, in the apparatus, a main frame 1 supports an illumination system 2, a projection objective 4 and a wafer stage 8, and a silicon wafer coated with photosensitive resist is placed on the wafer stage 8. An immersion liquid, which may be water, is filled in the gap between the projection objective 4 and the silicon wafer. During operation, the immersion liquid limiting mechanism, namely the immersion head 6, provides a stable immersion liquid flow field 5 in the field range of the projection objective according to the motion state of the silicon wafer stage 8. The pattern of the integrated circuit on the reticle 3 is transferred in an imagewise exposure manner via the illumination system 2, the projection objective 4 and the immersion liquid onto a silicon wafer coated with a photosensitive resist, thereby completing the exposure. Wherein, a GAP (GAP) with a certain height exists between the lower surface of the immersion head 6 and the silicon wafer. In order to prevent liquid in the immersion liquid flow field from leaking from this GAP (GAP), the air supply apparatus supplies compressed air to an air supply chamber in the immersion head 6 through an air supply pipe to form a sealed air flow between the lower surface of the immersion head 6 and the upper surface of the silicon wafer to block the liquid leakage in the liquid field.
In an immersion lithography system operating based on the above principle, it has been found through practice that the variation of the GAP (GAP) with the scene affects the exposure error, resulting in exposure defects.
Disclosure of Invention
The invention provides an immersion fluid control device, an immersion lithography system and a recovery control method, which aim to solve the problem of exposure defects caused by exposure errors.
According to a first aspect of the present invention, there is provided an immersion fluid control apparatus for use in an immersion lithography system, the immersion lithography system including a wafer table and a gas-liquid recovery mechanism, the control apparatus comprising: a complete machine control unit and a recovery control unit;
the whole machine control unit is used for sending the motion information of the silicon wafer stage to the recovery control unit; the motion information of the silicon wafer stage is used for representing the motion track of the silicon wafer stage in the photoetching process;
and the recovery control unit is used for calculating and obtaining the gas-liquid recovery flow rate in the photoetching process according to the movement information of the silicon wafer stage sent by the complete machine control unit, and controlling the gas-liquid recovery mechanism to recover gas and liquid according to the gas-liquid recovery flow rate in the photoetching process.
Optionally, the recovery control unit is specifically configured to:
calculating gap change data which can be generated in each motion stage of the silicon wafer stage according to the motion information of the silicon wafer stage, wherein the gap change data is used for representing the change of a gap between the lower surface of the immersion head and the upper surface of the silicon wafer;
according to the clearance change data, the gas-liquid recovery flow rate corresponding to each motion stage is obtained, so that: the gas-liquid recovery flow rate becomes larger as the gap becomes larger, and the gas-liquid recovery flow rate becomes smaller as the gap becomes smaller.
Optionally, the recovery control unit is specifically configured to: determining the vertical movement information of the silicon wafer stage in each movement stage according to the movement information of the silicon wafer stage; and calculating the gap variation data which can be generated by the vertical motion information.
Optionally, the recovery control unit is specifically configured to, only when the change in the gap exceeds a threshold value, cause: the gas-liquid recovery flow rate becomes larger as the gap becomes larger, and the gas-liquid recovery flow rate becomes smaller as the gap becomes smaller.
Optionally, the motion information of the wafer stage is preset information before the start of the photolithography process.
Optionally, the lithography system further comprises a motion actuator, and the control device further comprises a motion control unit;
the complete machine control unit is also used for sending the motion information of the silicon wafer stage to the motion control unit;
and the motion control unit is used for controlling a motion execution element to drive the silicon wafer stage to move according to the silicon wafer motion information in the photoetching process.
Optionally, the control device further includes: a synchronization control unit;
the synchronous control unit is used for outputting first time sequence information to the recovery control unit and the motion control unit in the photoetching process, so that the recovery control unit and the motion control unit respectively control the gas-liquid recovery mechanism and the motion execution element at synchronous time sequences.
Optionally, the lithography system further comprises a liquid supply mechanism and a liquid recovery mechanism;
the whole machine control unit is also used for sending liquid supply flow information to the recovery control unit; the liquid supply flow information is used for representing the liquid supply flow of the liquid supply mechanism in the photoetching process;
the recovery control unit is further configured to calculate a liquid recovery flow rate in the photolithography process according to the liquid supply flow rate information sent by the complete machine control unit, so that: the liquid recovery flow rate is increased along with the increase of the liquid supply flow rate, and the liquid recovery flow rate is decreased along with the decrease of the liquid supply flow rate; and, in the lithography process, the liquid recovery mechanism performs liquid recovery according to the liquid recovery flow rate control.
Optionally, the control device further comprises a liquid supply control unit;
the whole machine control unit is also used for sending the liquid supply flow information to the liquid supply control unit;
and the liquid supply control unit is used for controlling the liquid supply mechanism to supply liquid according to the liquid supply flow information in the photoetching process.
Optionally, the control device further includes: a synchronization control unit;
the synchronous control unit is used for outputting second time sequence information to the recovery control unit and the liquid supply control unit in the photoetching process so as to: the recovery control unit and the liquid supply control unit respectively control the liquid recovery mechanism and the liquid supply mechanism in a synchronous time sequence.
Optionally, the photolithography system includes an immersion head, a horizontal liquid supply channel and a horizontal recovery channel are disposed in the immersion head, the liquid supply mechanism is configured to supply liquid to the horizontal liquid supply channel, and the liquid recovery mechanism is configured to recover liquid in the horizontal recovery channel.
According to a second aspect of the present invention, there is provided an immersion lithography system comprising a control device according to the first aspect and alternatives thereof.
Optionally, the lithography system includes an immersion head and a projection objective, where the immersion head is used to form an immersion liquid flow field between a silicon wafer on the silicon wafer stage and the projection objective;
a horizontal liquid supply channel, a horizontal recovery channel, a gas supply channel and a gas-liquid recovery channel are arranged in the immersion head;
the horizontal liquid supply channel is connected with the liquid supply mechanism, the horizontal recovery channel is connected with the liquid recovery mechanism, and the gas-liquid recovery channel is connected with the gas-liquid recovery mechanism.
Optionally, the horizontal liquid supply channel is located at a first side of the immersion liquid flow field in the horizontal direction, and the horizontal recovery channel is located at a second side of the immersion liquid flow field in the horizontal direction; the height of the horizontal recovery channel is lower than that of the horizontal liquid supply channel;
the gas-liquid recovery channel comprises a first gas-liquid recovery channel arranged on the first side and a second gas-liquid recovery channel arranged on the second side; the gas supply channel comprises a first gas supply channel arranged on the first side and a second gas supply channel arranged on the second side;
the first gas-liquid recovery channel is positioned between the horizontal liquid supply channel and the first gas supply channel; the second gas-liquid recovery channel is located between the horizontal recovery channel and the second gas supply channel.
Optionally, a vertical liquid supply channel is further disposed in the immersion head, the vertical liquid supply channel is located on the first side, an outlet of the vertical liquid supply channel faces vertically downward, and the vertical liquid supply channel is connected to the liquid supply mechanism.
Optionally, the vertical liquid supply channel includes a first vertical liquid supply channel disposed on the first side and a second vertical liquid supply channel disposed on the second side;
the first vertical liquid supply channel is positioned between the first gas-liquid recovery channel and the horizontal liquid supply channel; the second vertical liquid supply channel is positioned between the second gas-liquid recovery channel and the horizontal recovery channel.
According to a third aspect of the present invention, there is provided a recovery control method characterized by comprising:
calculating to obtain the gas-liquid recovery flow rate in the photoetching process according to the movement information of the silicon wafer stage sent by the complete machine control unit;
and in the photoetching process, controlling the gas-liquid recovery mechanism to recover gas and liquid according to the gas-liquid recovery flow.
Optionally, the calculating, according to the motion information of the silicon wafer stage sent by the complete machine control unit, to obtain the gas-liquid recovery flow rate in the photolithography process includes:
calculating gap change data which can be generated in each motion stage of the silicon wafer stage according to the motion information of the silicon wafer stage, wherein the gap change data is used for representing the change of a gap between the lower surface of the immersion head and the upper surface of the silicon wafer;
according to the clearance change data, the gas-liquid recovery flow rate corresponding to each motion stage is obtained, so that: the gas-liquid recovery flow rate becomes larger as the gap becomes larger, and the gas-liquid recovery flow rate becomes smaller as the gap becomes smaller.
Optionally, the calculating, according to the motion information of the silicon wafer stage, gap change data that can be generated at each motion stage of the silicon wafer stage includes:
determining the vertical movement information of the silicon wafer stage in each movement stage according to the movement information of the silicon wafer stage;
and calculating the gap variation data generated by the vertical motion information.
Optionally, the method further includes:
according to the liquid supply flow information sent by the complete machine control unit, calculating to obtain the liquid recovery flow in the photoetching process, so that: the liquid recovery flow rate is increased along with the increase of the liquid supply flow rate, and the liquid recovery flow rate is decreased along with the decrease of the liquid supply flow rate;
and in the photoetching process, controlling the liquid recovery mechanism to recover the liquid according to the liquid recovery flow.
The invention finds that in an immersion lithography system, the variation of the GAP (GAP) affects the exposure error, and one of the reasons for the exposure defect is that: the switching of the fluid between different scenes can cause the fluid in the GAP (GAP) to change, so that the resultant force of the fluid acting on the silicon wafer can change along with the change of different scenes.
The resultant force is respectively influenced by a GAP (GAP) and the flow velocity of the fluid, so that the gas-liquid recovery flow in the photoetching process is calculated by the recovery control unit according to the motion information of the silicon wafer stage sent by the complete machine control unit, and the gas-liquid recovery mechanism is controlled according to the gas-liquid recovery flow to perform gas-liquid recovery in the photoetching process, so that the gas-liquid recovery flow is determined according to the motion of the silicon wafer stage, and further the influence of the flow velocity on the resultant force can be utilized to compensate the influence of the change of the GAP (GAP) on the resultant force, thereby reducing the exposure error and reducing the exposure defect.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic diagram of a prior art immersion lithographic apparatus;
FIG. 2 is a first schematic diagram of an immersion lithography system according to the present invention;
FIG. 3 is a schematic diagram illustrating the principle of the resultant force of a fluid on a silicon wafer according to the present invention;
FIG. 4 is a second schematic diagram of an immersion lithography system according to the present invention;
FIG. 5 is a schematic view of a region of an immersion liquid flow field of the present invention;
FIG. 6 is a schematic view of an immersion fluid control apparatus according to the present invention;
FIG. 7a is a schematic diagram of the variation of the position of a stage according to the present invention;
FIG. 7b is a diagram illustrating the variation of the gas-liquid recovery flow rate according to the present invention;
FIG. 8 is a second schematic view of an immersion fluid control apparatus of the present invention;
FIG. 9a is a schematic view of a variation of a liquid supply flow rate according to the present invention;
FIG. 9b is a schematic diagram of the variation of a liquid recovery flow rate according to the present invention;
FIG. 10 is a flowchart illustrating a recovery control method according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The technical solution of the present invention will be described in detail below with specific examples. The following several specific embodiments may be combined with each other, and details of the same or similar concepts or processes may not be repeated in some embodiments.
FIG. 2 is a schematic diagram of an immersion lithography system according to the present invention, which can also be used in the lithographic apparatus of FIG. 1.
Referring to fig. 2, the lithography system comprises a wafer stage, an immersion head 100 and a projection objective 300, wherein the immersion head 100 is used for forming an immersion liquid flow field 400 between a silicon wafer on the wafer stage and the projection objective. The immersion head 100, the silicon wafer on the wafer stage, and the projection objective 300 may be arranged to form the immersion liquid flow field 400 therebetween in any manner known in the art.
Wherein, a horizontal liquid supply channel 101, a horizontal recovery channel 104, a gas supply channel 103 and a gas-liquid recovery channel 102 are arranged in the immersion head 100. The horizontal liquid supply channel 101 is connected with a liquid supply mechanism 700, the horizontal recovery channel 104 is connected with a liquid recovery mechanism 800, the gas-liquid recovery channel 102 is connected with the gas-liquid recovery mechanism 600, and the gas supply channel 103 is connected with a gas supply mechanism 500.
With respect to the location of each channel, please refer to fig. 2, which can be described as follows: the horizontal liquid supply channel 101 is located on a first horizontal side of the immersion liquid flow field 400, and the horizontal recovery channel 104 is located on a second horizontal side of the immersion liquid flow field 400; taking fig. 2 as an example, it can be understood as being located on the left and right sides of the immersion liquid flow field 400, respectively. The horizontal recovery channel 104 is lower in height than the horizontal liquid supply channel 101 to enable a circulating flow of immersion liquid. The gas-liquid recovery channel 102 comprises a first gas-liquid recovery channel arranged on the first side and a second gas-liquid recovery channel arranged on the second side; the gas supply channel 103 comprises a first gas supply channel arranged on the first side and a second gas supply channel arranged on the second side; the first gas-liquid recovery channel is positioned between the horizontal liquid supply channel 101 and the first gas supply channel; the second gas-liquid recovery channel is located between the horizontal recovery channel 104 and the second gas supply channel.
In addition, the gas-liquid recovery passage 102 may be provided with a gas-liquid chamber 1021, and a gas-liquid recovery port 1022; the gas supply passage 103 may be provided with a gas chamber 1031, and a gas outlet 1032.
The lithography system, may further comprise:
and the liquid supply mechanism 700 is connected with the horizontal liquid supply channel 101 and is used for supplying liquid to the horizontal liquid supply channel 101 and controlling parameters such as the flow rate of the liquid supply and the like.
The gas-liquid recovery mechanism 600 is connected to the gas-liquid recovery channel 102 and is used for recovering the fluid in the gas-liquid recovery channel 102, and the gas-liquid recovery mechanism 600 may also be connected to the horizontal recovery channel 104 and is used for recovering the liquid therein. Meanwhile, the gas-liquid recovery mechanism 600 may also be used to control parameters such as the flow rate of recovery as mentioned above.
And the gas supply mechanism 500 is connected with the gas supply channel 103 and used for supplying gas to the gas supply channel 103 and controlling parameters such as the flow of the supplied gas.
The immersion lithography system illustrated in fig. 2 includes an immersion fluid control apparatus provided in the present invention and its alternative embodiments, and controls a gas-liquid recovery mechanism 600 and the like. In the following, the control without the immersion fluid control device is described in detail to discuss the function of the immersion fluid control device and the concept of forming the same.
As shown in FIG. 3, if the density of the immersion liquid filled in the Gap (GPA) between the lower surface of the immersion head 100 and the upper surface of the silicon wafer 200 is ρwThe density of the compressed air in the Gap (GPA) is rhoaThe dynamic viscosity of the immersion fluid is mu, and the silicon wafer 200 is at a speed v0And moving, wherein the distance between the lower surface of the immersion head 100 and the upper surface of the silicon wafer 200 is h, the height of the Gap (GPA) is h, and the width of the Gap (GPA) is l.
Then the immersion fluid flow takes into account the steady, continuous, unpressurized N-S equation:
the boundary of the upper surface of the silicon wafer 200 adopts the condition of no sliding boundary:
wherein, + v0Indicating that the flow direction of the immersion fluid within the GAP (GAP) is co-directional; -v0Showing the direction of movement of the wafer 200 opposite to the direction of flow of the immersion fluid in the GAP (GAP) between the lower surface of the immersion head 100 and the upper surface of the wafer 200.
The velocity profile of the immersion fluid in the GAP (GAP) between the lower surface of the immersion head 100 and the upper surface of the silicon wafer 200 can be obtained:
the perimeter of the periphery of the immersion liquid flow field 400 is defined as B, such that the flow q in the GAP (GAP) between the lower surface of the immersion head 100 and the upper surface of the silicon wafer 200 is obtainedvComprises the following steps:
the flow of the fluid in the GAP (GAP) will vary and the flow of the recovered immersion liquid will vary due to the switching of fluid heights and velocities at different scenes.
Further analysis may determine the immersion fluid flow pressure Δ p in the GAP (GAP) between the lower surface of the immersion head 100 and the upper surface of the silicon wafer 200:
it is known that the variation of fluid flow in the GAP (GAP) with the scene will cause a variation of Δ p. On one hand, the change of the delta p can interfere the motion control of the silicon wafer stage, and finally, the focusing error is caused, and the exposure defect is generated; on the other hand, the variation in Δ p causes deformation of the silicon wafer 200, eventually resulting in exposure errors and exposure defects.
In addition, under the condition of high-speed scanning, in order to realize dynamic sealing of an immersion flow field, the sealing failure does not occur, and the critical speed v of the sealing air flow isaThe following requirements are satisfied:
in the formula, vwAverage flow rate of immersion liquid, p, for pumpingsIs static pressure. If the flow rate of the sealing air flow is insufficient, the sealing is failed; if the sealing gas flow rate is too fast, a large force is generated on the surface of the silicon wafer 200.
For the sealing air flow, under different scenes, when a GAP (GAP) between the lower surface of the immersion head 100 and the upper surface of the silicon wafer 200 changes, the flow velocity of the sealing air flow in the GAP (GAP) changes, and further the acting force of the sealing air flow on the silicon wafer 200 changes.
FIG. 3 is a schematic diagram illustrating the principle of the resultant force of a fluid on a silicon wafer according to the present invention. Force analysis for the silicon wafer 200 as shown in fig. 3, four forces are generated on the silicon wafer 200 due to the introduction of the immersion fluid: the downward force by the immersion fluid is simplified to F1, the downward force by the sealing gas from the gas supply port 1032 to the silicon wafer 200 is simplified to F3, the upward force by the sealing gas from the gas-liquid recovery port 1022 to the silicon wafer 200 is simplified to F2, and the upward force by the surface tension or capillary force generated by the solid-liquid-gas interface to the silicon wafer is simplified to F4. The resultant of the four forces can be simplified as:
F＝F1+F2+F3+F4
to reduce exposure defects, the perturbation of the total force should be minimized, ideally with a constant or zero total force F. However, as can be seen from the above analysis, the four forces acting on the silicon wafer 200 will change with different scenes, which is a problem to be solved.
As can be seen from the above formulas, if the variation of the fluid velocity v is matched with the variation of the height h of the GAP (GAP), the fluctuation of the force F caused by the variation of h can be reduced, i.e. the variation of h is compensated by the fluid velocity. The immersion fluid control device provided by the present invention and its alternatives can be elucidated on the basis of this idea.
Before describing the immersion fluid control apparatus, an embodiment of the immersion lithography system that differs from the exemplary embodiment of fig. 2 will also be explained, which may also be understood as an improvement over the exemplary embodiment of fig. 2. FIG. 4 is a second schematic diagram of an immersion lithography system according to the present invention.
Referring to fig. 4, on the basis of the system illustrated in fig. 2, it may further include: and the vertical liquid supply channel 105, the vertical liquid supply channel 105 is positioned on the first side of the immersion liquid flow field 400, an outlet of the vertical liquid supply channel 105 is vertically downward, specifically, the outlet of the vertical liquid supply channel 105 is arranged at the bottom of the immersion head 100, and the vertical liquid supply channel 105 is connected with the liquid supply mechanism 700. Namely, the horizontal liquid supply channel 101 and the vertical liquid supply channel 105 are both provided by the liquid supply mechanism 700. Further, the inlet of the gas-liquid recovery passage 102 and the outlet of the gas supply passage 103 may be provided at the bottom of the immersion head 100.
The distinction between the horizontal liquid supply channel 101 and the vertical liquid supply channel 105 can be understood to include: the outlet of the horizontal liquid supply channel 101 is horizontal, the outlet of the vertical liquid supply channel 105 is vertical, and the horizontal liquid supply channel 101 itself may be arranged horizontally, but the horizontal liquid supply channel 101 and the vertical liquid supply channel 105 may have a horizontal portion and a vertical portion, or other portions arranged in other directions, and are not limited to those shown in fig. 4.
The vertical liquid supply channel 105 comprises a first vertical liquid supply channel arranged on the first side and a second vertical liquid supply channel arranged on the second side; the first vertical liquid supply channel is positioned between the first gas-liquid recovery channel and the horizontal liquid supply channel 101; the second vertical liquid supply channel is positioned between the second gas-liquid recovery channel and the horizontal recovery channel 104.
The liquid supply mechanism 700 in the lithography system is further connected to the vertical liquid supply channel 105, and is used for supplying liquid to the vertical liquid supply channel 105, and controlling parameters such as the flow rate of the liquid supply. The photolithography system may further include a liquid recycling mechanism 800 connected to the horizontal recycling channel 104 for recycling the liquid in the horizontal recycling channel 104, in this embodiment, the liquid recycling in the horizontal recycling channel 104 is not implemented by the gas-liquid recycling mechanism 600, but a liquid recycling mechanism is provided. Based on this, the recovery of the gas-liquid recovery mechanism 600 and the recovery of the liquid recovery mechanism 800 can be controlled separately.
Further, the outlet of the vertical liquid supply channel 105 may be the liquid outlet 1051.
Fig. 5 is a schematic view of a region of an immersion liquid flow field of the present invention.
Referring to fig. 5, under the action of the system shown in fig. 4, the gas-liquid recycling port 1022, the gas outlet 1032 and the liquid outlet 1051 are all disposed at the bottom of the immersion head 100, and they may be annular. The three openings divide the space between the bottom of the immersion head 100 and the silicon wafer 200 into a first region 460, a second region 470, a third region 480 and a fourth region 490 from inside to outside in sequence; the first region 460 and the second region 470 are layers of incompressible liquid; third region 480 and fourth region 490 are layers of sealing gas; the present invention can compensate for force fluctuations in the GAP (GAP) by adjusting the flow rate of the gas-liquid recovery channel 102.
Fig. 6 is a schematic view of an immersion fluid control device according to the present invention.
Referring to fig. 6, the control device may be applied to the lithography systems illustrated in fig. 2 and 4, and may also be applied to other immersion lithography systems, and the control device 1 includes: a complete machine control unit 11 and a recovery control unit 12.
The complete machine control unit 11 is configured to send the motion information of the wafer stage to the recovery control unit 12.
The movement information of the silicon wafer stage is used for representing the movement track of the silicon wafer stage in the photoetching process, and can be any data used for representing the movement track, and in the specific implementation process, the position coordinates of movement or the relative position change data of each action can be adopted. Since the silicon wafer 200 is supported on the silicon wafer stage, the relative variation of the position in the motion trajectory is the same as that of the silicon wafer 200, so that the motion of the silicon wafer 200 can be represented. The movement information of the wafer stage may be preset information before the start of the photolithography process, and the photolithography process may be understood as making the wafer stage start to move so as to enter the photolithography process, if the photolithography process includes the following stages: the initialization stage, the batch measurement and calibration stage, the mask alignment stage and the exposure stage, the motion information of the wafer stage can be preset information before the initialization stage.
The recovery control unit 12 is configured to calculate a gas-liquid recovery flow rate in the photolithography process according to the movement information of the wafer stage sent by the complete machine control unit 11, and perform gas-liquid recovery by the gas-liquid recovery mechanism according to the gas-liquid recovery flow rate in the photolithography process.
The gas-liquid recovery flow rate is understood to be a flow rate of gas-liquid per unit time, and its unit is expressed as l/min, i.e., a passing gas-liquid volume flowing per minute.
The data and control flows shown in FIG. 6 may include the above-listed wafer stage motion information.
In the embodiment, the recovery control unit calculates the gas-liquid recovery flow rate in the photoetching process according to the movement information of the silicon wafer stage sent by the complete machine control unit, and controls the gas-liquid recovery mechanism to perform gas-liquid recovery according to the gas-liquid recovery flow rate in the photoetching process, so that the gas-liquid recovery flow rate is determined according to the movement of the silicon wafer stage, and the influence of the change of a GAP (GAP) on the resultant force can be compensated by utilizing the influence of the flow rate on the resultant force, thereby reducing the exposure error and the exposure defect.
The overall control unit 11 can be understood as a generalized control system, which may include but is not limited to control of electrical and electronic components, may further include various management control modules, and may also provide a human-computer interaction interface. The whole machine control unit can be a computer system and comprises a processor, a memory and other components and various transmission lines for transmitting signals, and can carry management software to work orderly and coordinately, so that various functions of the photoetching machine can be controlled, and various stages of photoetching are completed. Meanwhile, the whole machine control unit 11 can also be completed by adopting the existing equipment.
Meanwhile, the reflow control unit 12 may be a computer system, including a processor, a memory, and various transmission lines for transmitting signals.
In one embodiment, the recovery control unit 12 is specifically configured to:
and calculating GAP change data which can be generated in each motion stage of the silicon wafer stage according to the motion information of the silicon wafer stage, wherein the GAP change data is used for representing the change of a GAP (GAP) between the lower surface of the immersion head and the upper surface of the silicon wafer.
According to the clearance change data, the gas-liquid recovery flow rate corresponding to each motion stage is obtained, so that: the gas-liquid recovery flow rate becomes larger as the gap becomes larger, and the gas-liquid recovery flow rate becomes smaller as the gap becomes smaller.
Wherein the motion phases may be understood with reference to the phases of lithography, for example, may include; the method comprises an initialization stage, a mass production testing and calibration stage, a mask alignment stage and an exposure stage.
Specifically, the change of the GAP (GAP) is mainly represented by the change of the height, so that the vertical movement information of the silicon wafer stage in each movement stage can be determined according to the movement information of the silicon wafer stage; and calculating the gap change data generated by the vertical motion information.
In one embodiment, the vertical motion information may include: the specific motion track parameters of the silicon wafer stage in the Z direction in the initialization stage, the specific motion track parameters of the silicon wafer stage in the Z direction in the mass production interval measurement and calibration stage, the specific motion track parameters of the silicon wafer stage in the Z direction in the mask alignment stage, the specific motion track parameters of the silicon wafer stage in the Z direction in the exposure stage and the like.
If the motion information of the wafer stage and the vertical motion information are coordinates, the process of calculating the gap variation data may be a process of calculating a difference between the coordinates from the coordinates.
The quantitative correspondence between the gap variation data and the gas-liquid recovery flow rate can be derived according to the action principle and the companies listed above, or can be obtained through limited experiments based on the action principle and the formulas listed above.
Furthermore, the recovery control unit is specifically configured to cause, only when the variation in the gap exceeds a threshold value: the gas-liquid recovery flow rate becomes larger as the gap becomes larger, and the gas-liquid recovery flow rate becomes smaller as the gap becomes smaller.
In the process of performing gas-liquid recovery by the gas-liquid recovery mechanism according to the gas-liquid recovery flow rate, the backflow notification unit 12 may convert the obtained gas-liquid recovery flow rate into a command executable by the gas-liquid recovery mechanism 600, so as to implement control by outputting the command to the gas-liquid recovery mechanism 600.
In the specific implementation process, the following can be listed:
in the initialization stage, when the movement of the silicon wafer stage in the Z direction causes the GAP (GAP) between the lower surface of the immersion head 100 and the upper surface of the silicon wafer 200 to change, the reflux control unit 12 can control the flow controller on the gas-liquid two-phase recovery main flow path to adjust the real-time change of the gas-liquid recovery flow. The gas-liquid recovery flow rate is increased in real time when the GAP (GAP) is increased, and the gas-liquid recovery flow rate is decreased in real time when the GAP (GAP) is decreased, namely the gas-liquid recovery flow rate is increased along with the increase of the GAP (GAP) between the lower surface of the immersion head and the upper surface of the silicon wafer, and the gas-liquid recovery flow rate is decreased along with the decrease of the GAP (GAP) between the lower surface of the immersion head and the upper surface of the silicon wafer, so that the compensation for the change of the force between the immersion head.
In the mass production measurement and calibration stage, the mask alignment stage, the silicon and exposure stage and the like, the movement of the silicon wafer stage in the Z direction is controlled, the gas-liquid recovery flow rate is increased along with the increase of the GAP (GAP) between the lower surface of the immersion head 100 and the upper surface of the silicon wafer 200, the gas-liquid two-phase recovery flow rate is reduced along with the decrease of the GAP (GAP) between the lower surface of the immersion head 100 and the upper surface of the silicon wafer, and the change of the force between the immersion head 100 and the silicon wafer stage is. The fluctuation of the force between the immersion head 100 and the silicon wafer stage becomes smaller after being compensated, the smaller fluctuation of the force between the immersion head 100 and the silicon wafer stage is beneficial to reducing the stress deformation of the silicon wafer, and the smaller fluctuation of the force between the immersion head and the silicon wafer stage is beneficial to reducing the focusing error.
In one embodiment, the lithography system further comprises a motion actuator 900, and the control device further comprises a motion control unit 13.
The complete machine control unit 11 is further configured to send the motion information of the silicon wafer stage to the motion control unit 13. The motion control unit 13 is configured to control the motion actuator 900 to drive the silicon wafer stage to move according to the silicon wafer motion information in the photolithography process, that is, to drive the silicon wafer stage to move according to a required trajectory.
The motion control unit 13, which may be a computer system, includes components such as a processor, a memory, etc., and various transmission lines for transmitting signals.
In controlling the motion actuator to drive the wafer stage to move, the motion control unit 13 may convert the wafer stage motion information into a command executable by the motion actuator, so as to implement control by outputting the command to the motion actuator 900. The logic and components used for controlling the movement of the wafer stage can be realized by referring to the mode of controlling the movement of the wafer stage in the prior art.
The control device further comprises: a synchronization control unit 14;
the synchronization control unit 14 is configured to output first timing information to the recovery control unit 12 and the motion control unit 14 during the photolithography process, so that the recovery control unit 12 and the motion control unit 14 respectively control the gas-liquid recovery mechanism 600 and the motion actuator 900 at synchronized timings. FIG. 6 schematically shows
The synchronization control unit 14 controls the precise synchronization of the actions of the wafer stage motion control unit 103 and the recovery control unit 102 with fine time particles, and can not only enter each stage synchronously, but also achieve synchronization for each specific action in each stage, wherein the timing requirements can be determined by the negotiation of the motion control unit 103, the recovery control unit 102 and the synchronization control unit 14.
Fig. 6 only illustrates a data function, and for the connection relationship, the synchronization control unit 14 may establish a bidirectional communication connection with the recovery control unit 12 and the motion control unit 14, and the synchronization control unit 14 may also establish a bidirectional communication connection with the overall control unit 11.
FIG. 7a is a schematic diagram of the variation of the position of a stage according to the present invention; FIG. 7b is a diagram illustrating the variation of the gas-liquid recovery flow rate according to the present invention. Referring to fig. 7a and 7b, the change of the gas-liquid recovery flow rate according to the motion information of the wafer stage can be intuitively understood.
Furthermore, in one embodiment, the recovery control unit 12 is specifically configured to cause, only when the variation of the gap exceeds a threshold value: the gas-liquid recovery flow rate becomes larger as the gap becomes larger, and the gas-liquid recovery flow rate becomes smaller as the gap becomes smaller. As can be seen, the compensation method of the present embodiment does not continuously perform the gas-liquid recovery flow rate control, but performs selective control in real time according to the magnitude of the position variation of the workpiece stage. Referring to fig. 7a and 7b, for example, only the gas-liquid two-phase recovery flow rate control may be selected when the position variation of the workpiece stage exceeds 5 μm according to the requirement; and the gas-liquid two-phase recovery flow control can be performed when the position variation of the workpiece table exceeds 10 mu m according to requirements.
In addition, the flow velocity of the sealing gas can be adjusted by adjusting the gas-liquid recovery flow, and the dynamic sealing failure is avoided.
Fig. 8 is a second schematic structural view of an immersion fluid control apparatus of the present invention. This may be considered a modification of the embodiment illustrated in FIG. 6, which may be applied to the lithography system illustrated in FIG. 4, but is not limited thereto.
Referring to fig. 8 in combination with fig. 6, the lithography system may further include a liquid recycling mechanism 800, and the complete machine control unit 11 is further configured to send liquid supply flow information to the recycling control unit 12.
The recovery control unit 12 is further configured to calculate a liquid recovery flow rate in the photolithography process according to the liquid supply flow rate information sent by the complete machine control unit 11, so that: the liquid recovery flow rate is increased along with the increase of the liquid supply flow rate, and the liquid recovery flow rate is decreased along with the decrease of the liquid supply flow rate; in the photolithography process, the liquid recovery mechanism 800 performs liquid recovery according to the liquid recovery flow rate control.
Liquid supply flow rate information, which is used to characterize the liquid supply flow rate of the liquid supply mechanism 700 during a lithographic process, can also be understood as the volume of liquid supplied per unit time. Which may be information preset prior to the lithographic process.
The data and control flows shown in FIG. 8 may also include the feed flow information listed above.
In one embodiment, the control device further comprises a liquid supply control unit;
the complete machine control unit 11 is further configured to send the liquid supply flow information to the liquid supply control unit 15.
The liquid supply control unit 15 is configured to control the liquid supply mechanism 700 to supply liquid according to the liquid supply flow information during the photolithography process.
In this embodiment, the liquid supply control unit 15 may calculate and adjust the size of the liquid supply flow in real time; the recovery control unit 12 can calculate and adjust the recovery flow in real time, and the recovery flow can be matched and changed in real time.
The liquid supply mechanism 700 may supply liquid to the horizontal liquid supply channel 101, may also supply liquid to the vertical liquid supply channel 105, and may also supply liquid to both the horizontal liquid supply channel 101 and the vertical liquid supply channel 105. Meanwhile, in the case of simultaneously supplying liquid to the horizontal liquid supply channel 101 and the vertical liquid supply channel 105, the liquid supply flow rates of the horizontal liquid supply channel 101 and the vertical liquid supply channel 105 may be simultaneously controlled according to the liquid supply flow rate information, or the horizontal liquid supply channel 101 may be controlled only according to the liquid supply flow rate information, that is, the liquid supply flow rate information may be further used to represent the liquid supply flow rates of the horizontal liquid supply channel 101 and/or the vertical liquid supply channel 105 in the photolithography process of the liquid supply mechanism 700.
Taking liquid supply flow information to represent the liquid supply flow of the liquid supply mechanism 700 in the horizontal liquid supply channel 101 during the photolithography process as an example, in a specific example, when the liquid supply flow of the horizontal liquid supply channel 101 increases, the liquid recovery flow increases in real time, and when the liquid supply flow of the horizontal liquid supply channel 101 decreases, the liquid recovery flow decreases in real time, which can also be understood as follows: the horizontal recovery flow rate is increased along with the increase of the liquid supply flow rate of the immersion head, and the horizontal recovery flow rate is reduced along with the reduction of the liquid supply flow rate of the immersion head, so that the balance control of the liquid flow rate of the immersion head is realized, the wafer stage force fluctuation caused by the change of the liquid supply flow rate is compensated, meanwhile, the liquid overflow caused by the unbalanced flow rate is avoided, and therefore, the change of the liquid supply flow rate is matched, and a more stable flow field can be generated. The fluctuation of the force between the immersion head 100 and the silicon wafer stage becomes smaller after being compensated, the smaller fluctuation of the force between the immersion head and the silicon wafer stage is beneficial to reducing the stress deformation of the silicon wafer, and the smaller fluctuation of the force between the immersion head and the silicon wafer stage is beneficial to reducing the focusing error of the photoetching equipment.
The synchronization control unit 14 is further configured to output second timing information to the recovery control unit 12 and the liquid supply control unit 15 during the photolithography process, so that: the recovery control unit 12 and the liquid supply control unit 15 control the liquid recovery mechanism 800 and the liquid supply mechanism 700, respectively, at synchronized timings.
The synchronization control unit 14 controls the precise synchronization of the actions of the liquid supply control unit 15 and the recovery control unit 102 with fine time particles, and may not only enter each stage synchronously, but also achieve synchronization for each specific action in each stage, wherein the timing requirements may be determined by negotiation of the liquid supply control unit 15, the recovery control unit 102 and the synchronization control unit 14.
The first timing sequence and the second timing sequence may be different, and the present invention does not exclude the same possibility in the implementation process. The synchronous timing streams illustrated in fig. 6 and 8 may include a first timing and a second timing.
The liquid supply control unit 15 may be a computer system, including a processor, a memory, and various transmission lines for transmitting signals.
Fig. 8 illustrates only one way of acting on the data, for which the synchronization control unit 14 can establish a two-way communication connection with the liquid supply control unit 15.
FIG. 9a is a schematic view of a variation of a liquid supply flow rate according to the present invention; FIG. 9b is a schematic diagram of the variation of the liquid recovery flow rate according to the present invention. Referring to fig. 7a and 7b, the change of the liquid recovery flow rate according to the liquid supply flow rate information can be intuitively understood.
FIG. 10 is a flowchart illustrating a recovery control method according to the present invention.
Referring to fig. 10, the method includes:
s11: and calculating to obtain the gas-liquid recovery flow in the photoetching process according to the silicon wafer stage motion information sent by the complete machine control unit, wherein the silicon wafer stage motion information is used for representing the motion track of the silicon wafer stage in the photoetching process.
S12: and in the photoetching process, controlling the gas-liquid recovery mechanism to recover gas and liquid according to the gas-liquid recovery flow.
Optionally, the S11 includes:
and calculating gap change data which can be generated in each motion stage of the silicon wafer stage according to the motion information of the silicon wafer stage, wherein the gap change data is used for representing the change of the gap between the lower surface of the immersion head and the upper surface of the silicon wafer.
According to the clearance change data, the gas-liquid recovery flow rate corresponding to each motion stage is obtained, so that: the gas-liquid recovery flow rate becomes larger as the gap becomes larger, and the gas-liquid recovery flow rate becomes smaller as the gap becomes smaller.
Optionally, the calculating, according to the motion information of the silicon wafer stage, gap change data that can be generated at each motion stage of the silicon wafer stage includes:
determining the vertical movement information of the silicon wafer stage in each movement stage according to the movement information of the silicon wafer stage;
and calculating the gap variation data generated by the vertical motion information.
Optionally, the method further includes:
according to the liquid supply flow information sent by the complete machine control unit, calculating to obtain the liquid recovery flow in the photoetching process, so that: the liquid recovery flow rate is increased along with the increase of the liquid supply flow rate, and the liquid recovery flow rate is decreased along with the decrease of the liquid supply flow rate;
and in the photoetching process, controlling the liquid recovery mechanism to recover the liquid according to the liquid recovery flow.
According to the control method provided by the embodiment, the gas-liquid recovery flow in the photoetching process is obtained through calculation according to the movement information of the silicon wafer stage sent by the complete machine control unit, and in the photoetching process, the gas-liquid recovery mechanism is controlled according to the gas-liquid recovery flow to carry out gas-liquid recovery, so that the gas-liquid recovery flow is determined according to the movement of the silicon wafer stage, and further the influence of the change of the GAP compensation clearance (GAP) on the resultant force by the flow velocity can be utilized, thereby reducing the exposure error and reducing the exposure defect.
Here, the recovery control method can be implemented by the recovery control unit described in the above embodiment, so that the description related to the above embodiment can be applied to the recovery control method, and thus the description will not be repeated.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (20)
1. An immersion fluid control device for use in an immersion lithography system, the immersion lithography system including a wafer table and a gas-liquid recovery mechanism, the control device comprising: a complete machine control unit and a recovery control unit;
the whole machine control unit is used for sending the motion information of the silicon wafer stage to the recovery control unit; the motion information of the silicon wafer stage is used for representing the motion track of the silicon wafer stage in the photoetching process;
the recovery control unit is used for calculating and obtaining gas-liquid recovery flow in the photoetching process according to the movement information of the silicon wafer stage sent by the complete machine control unit, controlling the gas-liquid recovery mechanism to carry out gas-liquid recovery according to the gas-liquid recovery flow in the photoetching process, determining the gas-liquid recovery flow according to the movement of the silicon wafer stage, and further compensating the influence of the change of the clearance on the resultant force by utilizing the influence of the flow velocity on the resultant force.
2. Immersion fluid control device according to claim 1, characterized in that the recovery control unit is specifically adapted to:
calculating gap change data which can be generated in each motion stage of the silicon wafer stage according to the motion information of the silicon wafer stage, wherein the gap change data is used for representing the change of a gap between the lower surface of the immersion head and the upper surface of the silicon wafer;
according to the clearance change data, the gas-liquid recovery flow rate corresponding to each motion stage is obtained, so that: the gas-liquid recovery flow rate becomes larger as the gap becomes larger, and the gas-liquid recovery flow rate becomes smaller as the gap becomes smaller.
3. Immersion fluid control device according to claim 2, characterized in that the recovery control unit is specifically configured to: determining the vertical movement information of the silicon wafer stage in each movement stage according to the movement information of the silicon wafer stage; and calculating the gap variation data which can be generated by the vertical motion information.
4. The immersion fluid control apparatus of claim 2, wherein the recovery control unit is specifically configured to cause, only when the change in the gap exceeds a threshold value: the gas-liquid recovery flow rate becomes larger as the gap becomes larger, and the gas-liquid recovery flow rate becomes smaller as the gap becomes smaller.
5. The immersion fluid control apparatus of claim 2, wherein the wafer stage motion information is preset information before a photolithography process is started.
6. The immersion fluid control apparatus of claim 2, wherein the lithography system further comprises a motion actuator, the control apparatus further comprising a motion control unit;
the complete machine control unit is also used for sending the motion information of the silicon wafer stage to the motion control unit;
and the motion control unit is used for controlling a motion execution element to drive the silicon wafer stage to move according to the silicon wafer stage motion information in the photoetching process.
7. The immersion fluid control apparatus of claim 6, further comprising: a synchronization control unit;
the synchronous control unit is used for outputting first time sequence information to the recovery control unit and the motion control unit in the photoetching process, so that the recovery control unit and the motion control unit respectively control the gas-liquid recovery mechanism and the motion execution element at synchronous time sequences.
8. The immersion fluid control apparatus of any one of claims 1 to 6, wherein the lithography system further comprises a liquid supply mechanism and a liquid recovery mechanism;
the whole machine control unit is also used for sending liquid supply flow information to the recovery control unit; the liquid supply flow information is used for representing the liquid supply flow of the liquid supply mechanism in the photoetching process;
the recovery control unit is further configured to calculate a liquid recovery flow rate in the photolithography process according to the liquid supply flow rate information sent by the complete machine control unit, so that the liquid recovery flow rate is increased as the liquid supply flow rate is increased, and the liquid recovery flow rate is decreased as the liquid supply flow rate is decreased; and, in the lithography process, the liquid recovery mechanism performs liquid recovery according to the liquid recovery flow rate control.
9. The immersion fluid control apparatus of claim 8, further comprising a liquid supply control unit;
the whole machine control unit is also used for sending the liquid supply flow information to the liquid supply control unit;
and the liquid supply control unit is used for controlling the liquid supply mechanism to supply liquid according to the liquid supply flow information in the photoetching process.
10. The immersion fluid control apparatus of claim 9, further comprising: a synchronization control unit;
and the synchronous control unit is used for outputting second time sequence information to the recovery control unit and the liquid supply control unit in the photoetching process so that the recovery control unit and the liquid supply control unit respectively control the liquid recovery mechanism and the liquid supply mechanism at a synchronous time sequence.
11. The immersion fluid control apparatus of claim 8, wherein the lithography system includes an immersion head having a horizontal liquid supply channel and a horizontal recovery channel, the liquid supply mechanism being configured to supply liquid to the horizontal liquid supply channel and the liquid recovery mechanism being configured to recover liquid from the horizontal recovery channel.
12. An immersion lithography system comprising a control device according to any one of claims 1 to 10.
13. The immersion lithography system of claim 12, comprising an immersion head and a projection objective, the immersion head being configured to form an immersion liquid flow field between a silicon wafer on the wafer stage and the projection objective;
a horizontal liquid supply channel, a horizontal recovery channel, a gas supply channel and a gas-liquid recovery channel are arranged in the immersion head;
the horizontal liquid supply channel is connected with the liquid supply mechanism, the horizontal recovery channel is connected with the liquid recovery mechanism, and the gas-liquid recovery channel is connected with the gas-liquid recovery mechanism.
14. The immersion lithography system of claim 13, wherein the horizontal liquid supply channel is located on a first horizontal side of the immersion liquid flow field and the horizontal recovery channel is located on a second horizontal side of the immersion liquid flow field; the height of the horizontal recovery channel is lower than that of the horizontal liquid supply channel;
the gas-liquid recovery channel comprises a first gas-liquid recovery channel arranged on the first side and a second gas-liquid recovery channel arranged on the second side; the gas supply channel comprises a first gas supply channel arranged on the first side and a second gas supply channel arranged on the second side;
the first gas-liquid recovery channel is positioned between the horizontal liquid supply channel and the first gas supply channel; the second gas-liquid recovery channel is located between the horizontal recovery channel and the second gas supply channel.
15. The immersion lithography system of claim 14, wherein a vertical liquid supply channel is further provided in the immersion head, the vertical liquid supply channel being located on the first side, an outlet of the vertical liquid supply channel facing vertically downward, the vertical liquid supply channel being connected to the liquid supply mechanism.
16. The immersion lithography system of claim 15, wherein said vertical liquid supply channel includes a first vertical liquid supply channel disposed on said first side and a second vertical liquid supply channel disposed on said second side;
the first vertical liquid supply channel is positioned between the first gas-liquid recovery channel and the horizontal liquid supply channel; the second vertical liquid supply channel is positioned between the second gas-liquid recovery channel and the horizontal recovery channel.
17. A recovery control method based on the immersion fluid control device of claim 1, comprising:
calculating to obtain the gas-liquid recovery flow rate in the photoetching process according to the movement information of the silicon wafer stage sent by the complete machine control unit;
and in the photoetching process, controlling the gas-liquid recovery mechanism to recover gas and liquid according to the gas-liquid recovery flow.
18. The method as claimed in claim 17, wherein the calculating the gas-liquid recovery flow rate in the photolithography process according to the motion information of the wafer stage sent by the complete machine control unit comprises:
calculating gap change data which can be generated in each motion stage of the silicon wafer stage according to the motion information of the silicon wafer stage, wherein the gap change data is used for representing the change of a gap between the lower surface of the immersion head and the upper surface of the silicon wafer;
according to the clearance change data, the gas-liquid recovery flow rate corresponding to each motion stage is obtained, so that: the gas-liquid recovery flow rate becomes larger as the gap becomes larger, and the gas-liquid recovery flow rate becomes smaller as the gap becomes smaller.
19. The method of claim 18, wherein calculating gap variation data that can be generated for each motion phase of the wafer stage based on the wafer stage motion information comprises:
determining the vertical movement information of the silicon wafer stage in each movement stage according to the movement information of the silicon wafer stage;
and calculating the gap variation data generated by the vertical motion information.
20. The method of claim 18, wherein the immersion lithography system further comprises a liquid recovery mechanism; the method further comprises the following steps:
calculating to obtain the liquid recovery flow rate in the photoetching process according to the liquid supply flow rate information sent by the complete machine control unit, so that the liquid recovery flow rate is increased along with the increase of the liquid supply flow rate, and the liquid recovery flow rate is decreased along with the decrease of the liquid supply flow rate;
and in the photoetching process, controlling the liquid recovery mechanism to recover the liquid according to the liquid recovery flow.
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| CN101634811B (en) * | 2009-08-20 | 2011-04-06 | 浙江大学 | Flexible seal and self-adaption recycling device for immersed photoetching machine |
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