CN109830874A - One kind controlling magnetized spinning electron THz wave transmitter based on voltage - Google Patents
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- 238000009987 spinning Methods 0.000 title claims abstract description 19
- 239000010409 thin film Substances 0.000 claims abstract description 65
- 230000005291 magnetic effect Effects 0.000 claims abstract description 43
- 239000010408 film Substances 0.000 claims abstract description 41
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 39
- 238000005086 pumping Methods 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000000956 alloy Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 3
- 229910001385 heavy metal Inorganic materials 0.000 claims description 3
- 230000001788 irregular Effects 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 229910052723 transition metal Inorganic materials 0.000 claims description 3
- 150000003624 transition metals Chemical group 0.000 claims description 3
- 229910003321 CoFe Inorganic materials 0.000 claims description 2
- 229910019236 CoFeB Inorganic materials 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical group 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 1
- 238000006116 polymerization reaction Methods 0.000 claims 1
- 230000005415 magnetization Effects 0.000 abstract description 18
- 230000008859 change Effects 0.000 abstract description 15
- 230000000694 effects Effects 0.000 abstract description 10
- 238000002360 preparation method Methods 0.000 abstract description 6
- 239000013078 crystal Substances 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000005265 energy consumption Methods 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 3
- 230000005329 antiferromagnetic resonance Effects 0.000 description 2
- 210000001367 artery Anatomy 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 210000003462 vein Anatomy 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910002065 alloy metal Inorganic materials 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000005418 spin wave Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Abstract
The embodiment of the present invention provides a kind of based on the magnetized spinning electron THz wave transmitter of voltage control, based on inverse logic gates, include the multi-layer film structure of electrode thin film layer, insulating thin layer, ferromagnetic thin film layer and non-ferric magnetic thin film layer using pumping laser irradiation, generates broadband terahertz pulse；It is theoretical based on La Shiba effect and spin(-)orbit, magnetize ratio outside controllable voltage change face inner face by applying, achievees the purpose that change output Terahertz size；Constitute the material cost relative moderate of multi-layer film structure, ferromagnetic thin film layer can be different from existing nonlinear crystal and photoconductive antenna with large scale preparation, and cost substantially reduces, and ferromagnetic thin film layer has perpendicular magnetic anisotropic, thus the magnetization on its unit area magnetizes much higher than in face.
Description
Technical field
The present embodiments relate to terahertz pulse generation technology field, more particularly to one kind are magnetized based on voltage control
Spinning electron THz wave transmitter.
Background technique
Terahertz (Terahertz, THz) is the wave band on electromagnetic spectrum between far infrared and millimeter wave, and frequency exists
Between 0.1-10THz.The THz wave of the frequency range has very strong transmittance, safety and spectrally resolved ability, reflects in biology
The fields such as fixed, safety monitoring and communication remote sensing have wide practical use.
Current more mature Terahertz preparation and detection means are based primarily upon photoelectronics, such as with zinc telluridse (ZnTe) light
Terahertz sources source based on rectifying effect and using GaAs (LT-GaAs) photoconductive antenna of low-temperature epitaxy as emission source
Terahertz Technology.The advantages of these technologies is that production technology system is mature, and the electric field strength of generation is high, stability is good, but also deposits
Preparation process complexity and it is with high costs the disadvantages of, cannot really realize large-scale production and application.It thus improves currently too
Hertz technology, the novel terahertz sources source for researching and developing high efficiency, low cost have great importance.
The rise and development of spintronics are Terahertz Technology band new breakthrough.Certain physics of spintronics are existing
As, such as crossover magnon, antiferromagnetic resonance, ultrafast Spin dynamics, characteristic frequency is just at Terahertz frequency range.Base
In the spintronics the phenomenon that and principle, mainly produce the novel THz wave production method of three classes, be respectively: spin injection is produced
Raw THz wave, the THz wave based on antiferromagnetic resonance generate and the THz wave based on ultrafast Spin dynamics generates.Its
In be based on ultrafast Spin dynamics, utilize femto-second laser pulse irradiation iron magnetic non-magnetic heterogenous multilayer film to generate THz wave
Method is current hot topic.
The principle of method based on ultrafast Spin dynamics is to irradiate iron magnetic non-magnetic heterogenous multilayer using femto-second laser pulse
Film surface, ferromagnetic layer internal electron absorb light energy and transit to the state higher than fermi level, generate nonequilibrium electronics point
Cloth；Be stimulated generation spins up electronics with sp characteristic electron, and the downward electronics that spins has p characteristic electron, the former
5 times faster than the latter of speed, produce instantaneous spin current.Due to inverse logic gates, spins up and dissipated with downward electronics
It is mapped to opposite direction, the instantaneous spin current for injecting non-magnetosphere is transformed into instantaneous electric charge stream, to give off broadband Terahertz arteries and veins
Punching, but THz wave device is generated in this way, all there is the disadvantages of energy consumption height, low efficiency, poor controllability.
Summary of the invention
The embodiment of the present invention provides one kind and controls magnetized spinning electron THz wave transmitter based on voltage, to solve
The disadvantages of energy consumption is high when generating THz wave based on ultrafast Spin dynamics in the prior art, low efficiency, poor controllability is realized super
The transmitting of broadband terahertz pulse radiation.
The embodiment of the present invention provides a kind of based on the magnetized spinning electron THz wave transmitter of voltage control, including multilayer
Membrane structure, femto-second laser and voltage source；
The multi-layer film structure includes the electrode thin film layer stacked gradually, insulating thin layer, and have perpendicular magnetic respectively to
Anisotropic ferromagnetic thin film layer and the non-ferric magnetic thin film layer with negative spin Hall angle；
The anode of the voltage source connects the electrode thin film layer, and the cathode of the voltage source connects the non-ferric magnetic thin film
Layer；
The femto-second laser is set to the electrode thin film layer side of multi-layer film structure, for emitting to the multi-layer film structure
Pumping laser.
It is provided in an embodiment of the present invention a kind of based on the magnetized spinning electron THz wave transmitter of voltage control, based on inverse
Logic gates include electrode thin film layer, insulating thin layer, ferromagnetic thin film layer and non-ferric magnetic thin film using pumping laser irradiation
The multi-layer film structure of layer generates broadband terahertz pulse；It is theoretical based on La Shiba effect and spin(-)orbit, by applying controllable electric
Magnetize ratio outside pressure change face inner face, achievees the purpose that change output Terahertz size；Constitute the material cost phase of multi-layer film structure
To cheap, ferromagnetic thin film layer can be different from existing nonlinear crystal and photoconductive antenna with large scale preparation, and cost drops significantly
It is low, and ferromagnetic thin film layer has perpendicular magnetic anisotropic, thus the magnetization on its unit area magnetizes much higher than in face.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is this hair
Bright some embodiments for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is the multilayer film knot for controlling magnetized spinning electron THz wave transmitter in the embodiment of the present invention based on voltage
Structure emits THz wave side view；
Fig. 2 is the multilayer film knot that magnetized spinning electron THz wave transmitter is controlled based on voltage of the embodiment of the present invention
Structure emits THz wave top view；
Fig. 3 is another implementation that magnetized spinning electron THz wave transmitter is controlled based on voltage of the embodiment of the present invention
The multi-layer film structure side view of example.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
Every other embodiment obtained without creative efforts, shall fall within the protection scope of the present invention.
In the prior art, when generating THz wave by ultrafast Spin dynamics, iron is irradiated using femto-second laser pulse
Magnetic non-magnetic heterogenous multilayer film surface, ferromagnetic layer internal electron absorb light energy and transit to the state higher than fermi level, generate
Nonequilibrium electronics distribution；Be stimulated generation spins up electronics with sp characteristic electron, and the downward electronics that spins has p electricity
Sub-feature, produces instantaneous spin current by 5 times faster than the latter of the former speed.Due to inverse logic gates, spin up and
Downward electronics is dispersed into opposite direction, and the instantaneous spin current for injecting non-magnetosphere is transformed into instantaneous electric charge stream, to give off
Broadband terahertz pulse, research numerous at present has confirmed that the reliability of this method, high but there are still energy consumptions, efficiency
The disadvantages of low, poor controllability.Therefore, it is based on inverse logic gates in the embodiment of the present invention, includes using pumping laser irradiation
Electrode thin film layer, insulating thin layer, ferromagnetic thin film layer and non-ferric magnetic thin film layer multi-layer film structure, generate broadband Terahertz arteries and veins
Punching；Expansion explanation and introduction will be carried out by multiple embodiments below.
Fig. 1 shows provided by the embodiments of the present application a kind of based on the magnetized spinning electron THz wave transmitting of voltage control
Device, including multi-layer film structure, femto-second laser and voltage source；
The multi-layer film structure includes the electrode thin film layer 1 stacked gradually, insulating thin layer 2, and to have perpendicular magnetic each
The ferromagnetic thin film layer 3 of anisotropy and with it is negative spin Hall angle non-ferric magnetic thin film layer 4；
The anode of the voltage source connects the electrode thin film layer 1, and the cathode connection of the voltage source is described non-ferromagnetic thin
Film layer 4；
The femto-second laser is set to 1 side of electrode thin film layer of multi-layer film structure, for sending out to the multi-layer film structure
Penetrate pumping laser.
In the present embodiment, the pumping laser of femto-second laser output penetrates above-mentioned multi-layer film structure, generates and is based on magnetic field
The THz wave of direction polarization, wherein femto-second laser is specially femtosecond laser oscillator, femtosecond laser amplifier or light
Fine femto-second laser.
In the present embodiment, initial ferromagnetic thin film layer 3 has perpendicular magnetic anisotropic, after applying voltage, so that originally
It is changed into the direction of magnetization in face perpendicular to interface, the direction of magnetization outside face, is applied to magnetic field meeting fixed in face at this time
So that the direction of magnetization is along a certain fixed-direction in face, as shown in fig. 1, femtosecond pumping laser enters from 1 side of electrode thin film layer
After injecting multi-layer film structure, contrary spin current is generated in ferromagnetic thin film layer 3, spin current injects non-ferromagnetic layers, due to
Inverse logic gates, spin current is changed into electric charge stream, to give off THz wave.By regulating and controlling voltage swing, Ke Yigai
Magnetize ratio outside the inner face of change face, achievees the purpose that regulate and control Terahertz size.Furthermore by changing voltage, the THz wave given off
Ellipse inclined rate is also possible to change.
Voltage source stablizes regulatable voltage to structure application by connection multi-layer film structure two end electrodes film layer 1,
The voltage can control the magnetized state of ferromagnetic thin film layer 3, to realize the purpose of control transmitting THz wave.Voltage controls magnetic
The principle of change is based on Quantum geometrical phase effect and La Shiba effect.For having the ferromagnetic thin film layer 3 of perpendicular magnetic anisotropic,
The outer magnetization reversal of its face inner face needs to overcome the barrier energy between different directions magnetization.By experimental verification, closed by applying
Suitable voltage can effectively reduce or even eliminate this barrier energy, to realize overturning easily, change in the face of ferromagnetic layer
Outer magnetization ratio.
Shown in as shown in Figure 1, Figure 2, constant in-plane field H is applied with inside ferromagnetic thin film layer 3, so that magnetization side in the level
To along magnetic direction.The pumping laser of femto-second laser output is incident on a face of multi-layer film structure, ferromagnetic thin film layer 3
In can generate contrary, the identical spin current Js of size, spin current flows into non-ferric magnetic thin film layer 4, due to inverse spin Hall
Effect is converted into electric charge stream Jc, to give off THz wave.Insulating thin layer 2 and 3 contact interface of ferromagnetic thin film layer are due to certainly
Rotation coupling effect produces interface perpendicular magnetic anisotropic.Apply respectively in electrode thin film layer 1 and 2 both ends of insulating thin layer variable
Voltage causes to magnetize than changing, i.e., absolutely outside 2 face inner face of insulating thin layer so that the barrier energy between overturning outside the inner face of face reduces
Change in edge film layer 2 along the magnetization quantity of magnetic direction, changes so as to cause the spin current and electric charge stream size of generation, most
Lead to the variation for being emitted THz wave eventually.
In the present embodiment, it is only necessary to the multi-layer film structure that can be grown with magnetron sputtering technique, without preparing macropore
The complicated micro-nano technology technology of diameter photoconductive antenna, overcome traditional terahertz pulse radiation transmitter it is high to material requirements,
The shortcomings that structure is complicated.
Based on inverse logic gates, femtosecond pumping laser irradiation electrode film layer 1, insulating thin layer 2, ferromagnetic thin is used
The multi-layer film structure that film layer 3 and non-ferric magnetic thin film layer 4 are constituted, generates broadband terahertz pulse；Based on La Shiba effect and spin
Orbit theory magnetizes ratio outside controllable voltage change face inner face by applying, achievees the purpose that change output Terahertz size.And
In the present embodiment, the material cost relative moderate of main structure is constituted, ferromagnetic thin film layer 3 can be different from existing with large scale preparation
Some nonlinear crystals and photoconductive antenna, cost substantially reduce.Magnetisation density is high: because of 3 structure of ferromagnetic thin film layer used
Have perpendicular magnetic anisotropic, thus the magnetization on its unit area is much higher than magnetization in face, energy consumption reduction: in the present embodiment
In, voltage can effectively reduce the energy barrier for even being eliminated magnetization reversal, and the magnetization that will be perpendicular to surface switchs to magnetic in face
Change, only needs to apply faint stationary magnetic field in face, can be obtained the direction of magnetization of needs.
THz wave transmitter in the present embodiment can also realize the continuous controllable of Terahertz: by changing the big of voltage
It is small, thus it is possible to vary magnetized quantity in face, and then change the intensity of transmitting Terahertz, and the intensity is continuous with voltage
Variation and change.Due to being limited only by the spectrum width of the THz wave generated in structural membrane and there is no phonon
Femto-second laser generate pumping laser pulse width, and with the phonon vibration frequency of material itself and absorption etc. factors without
It closes, therefore can realize the transmitting of ultra wide band terahertz pulse radiation.
On the basis of the above embodiments, the pulse width of the pumping laser is less than 1ps.
In the present embodiment, the shape of multi-layer film structure is not especially limited, and can is rule or irregular shape, for example be justified
Shape, ellipse, square, rectangle etc. can also be other irregular shapes, as long as the hot spot of pumping laser can be allow complete
It is radiated on multi-layer film structure.In the present embodiment, the pulse width of the pumping laser of femto-second laser output is less than
1ps, since stationary magnetic field is along uniform magnetic field in multi-layer film structure surface, the polarization state of the terahertz pulse radiation of generation is
Linear polarization, and polarization direction vertical magnetic field direction.
On the basis of the above embodiments, above-mentioned electrode thin film layer 1 is transparent metal layer, and the electrode thin film layer 1 is all
Or it is partially covered on 2 surface of insulating thin layer；Electrode thin film layer 1 is connected with the anode of voltage source.
On the basis of the above embodiments, the insulating thin layer 2 is metal oxide layer, such as MgO, insulating thin layer 2
There are two effects, first is that partition electric current, keeps upper and lower voltage drop, so that overall structure is shaped like battery；Second is that with it is ferromagnetic thin
Interface perpendicular magnetic anisotropic is formed by Quantum geometrical phase effect on 3 interface of film layer.
On the basis of the above embodiments, ferromagnetic thin film layer 3 is transition metal layer or ferromagnetic alloy；The ferromagnetism
Alloy-layer includes CoFeB alloy-layer and CoFe alloy layer.
In the present embodiment, the material of ferromagnetic thin film layer 3 is ferromagnetic alloy or transition metal, is applied in the level micro-
Weak fixed magnetic field H, to the direction of magnetization in regulation face, as shown in Figure 2.
On the basis of the above embodiments, non-ferric magnetic thin film layer 4 is the heavy metal material layer with negative spin Hall angle, institute
Stating heavy metal material layer is the platinum product bed of material or tungsten material layer, and the bottom of non-ferric magnetic thin film layer 4 is connected with the cathode of voltage source.
On the basis of the above embodiments, embeding layer is additionally provided between the insulating thin layer 2 and the ferromagnetic thin film layer 3
5, the embeding layer 5 is metal layer, high molecular polymer polyimide layer or ion glue-line.
In the present embodiment, as shown in figure 3, the multi-layer film structure in the present embodiment includes the electrode thin film layer stacked gradually
1, insulating thin layer 2, embeding layer 5, ferromagnetic thin film layer 3 and non-ferric magnetic thin film layer 4, in the present embodiment, embeding layer 5 are metal
Layer, concretely Mg, Co, Fe, Pt etc., in other embodiments, embeding layer 5 can also for high molecular polymer polyimide layer or
Ion glue-line in the present embodiment, by the structure of embeding layer 5, effectively enhances voltage and controls magnetization effect, improve voltage control too
The precision of hertz transmitting.
In conclusion a kind of voltage that is based on provided in this embodiment controls magnetized spinning electron THz wave transmitter,
It the use of pumping laser irradiation include electrode thin film layer, insulating thin layer, ferromagnetic thin film layer and non-ferric based on inverse logic gates
The multi-layer film structure of magnetic thin film layer generates broadband terahertz pulse；It is theoretical based on La Shiba effect and spin(-)orbit, pass through application
Controllable voltage changes and magnetizes ratio outside the inner face of face, achievees the purpose that change output Terahertz size；Constitute the material of multi-layer film structure
Relative inexpensiveness, ferromagnetic thin film layer can be different from existing nonlinear crystal and photoconductive antenna, cost with large scale preparation
It substantially reduces, and ferromagnetic thin film layer has perpendicular magnetic anisotropic, thus the magnetization on its unit area magnetizes much higher than in face.
The apparatus embodiments described above are merely exemplary, wherein described, unit can as illustrated by the separation member
It is physically separated with being or may not be, component shown as a unit may or may not be physics list
Member, it can it is in one place, or may be distributed over multiple network units.It can be selected according to the actual needs
In some or all of the modules achieve the purpose of the solution of this embodiment.Those of ordinary skill in the art are not paying creativeness
Labour in the case where, it can understand and implement.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
Present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: it still may be used
To modify the technical solutions described in the foregoing embodiments or equivalent replacement of some of the technical features；
And these are modified or replaceed, technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution spirit and
Range.
Claims (7)
1. one kind controls magnetized spinning electron THz wave transmitter based on voltage, which is characterized in that including multi-layer film structure,
Femto-second laser and voltage source；
The multi-layer film structure includes the electrode thin film layer stacked gradually, insulating thin layer, and has perpendicular magnetic anisotropic
Ferromagnetic thin film layer and with it is negative spin Hall angle non-ferric magnetic thin film layer；
The anode of the voltage source connects the electrode thin film layer, and the cathode of the voltage source connects the non-ferric magnetic thin film layer；
The femto-second laser is set to the electrode thin film layer side of multi-layer film structure, pumps for emitting to the multi-layer film structure
Laser.
2. according to claim 1 control magnetized spinning electron THz wave transmitter based on voltage, which is characterized in that
The pulse width of the pumping laser is less than 1ps.
3. according to claim 1 control magnetized spinning electron THz wave transmitter based on voltage, which is characterized in that
The non-ferric magnetic thin film layer is attached most importance to metal material layer, and the heavy metal material layer is the platinum product bed of material or tungsten material layer.
4. according to claim 1 control magnetized spinning electron THz wave transmitter based on voltage, which is characterized in that
The electrode thin film layer is transparent metal layer, and the electrode thin film layer is completely or partially covered on the insulation film layer surface；
The insulating thin layer is metal oxide layer.
5. according to claim 1 control magnetized spinning electron THz wave transmitter based on voltage, which is characterized in that
Embeding layer is additionally provided between the insulating thin layer and the ferromagnetic thin film layer, the embeding layer is metal layer, high molecular polymerization
Object polyimide layer or ion glue-line.
6. according to claim 1 control magnetized spinning electron THz wave transmitter based on voltage, which is characterized in that
The multi-layer film structure is rule or irregular shape.
7. according to claim 1 control magnetized spinning electron THz wave transmitter based on voltage, which is characterized in that
The ferromagnetic thin film layer is transition metal layer or ferromagnetic alloy；The ferromagnetic alloy is CoFeB alloy-layer or CoFe
Alloy-layer.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110535003A (en) * | 2019-08-21 | 2019-12-03 | 北京航空航天大学 | A kind of spin terahertz sources device and method |
| CN110687070A (en) * | 2019-10-17 | 2020-01-14 | 赫智科技(苏州)有限公司 | High-resolution terahertz signal transmitting and collecting method based on optical fiber |
| CN112103756A (en) * | 2020-10-12 | 2020-12-18 | 北京航空航天大学合肥创新研究院 | Spin terahertz transmitter with controllable polarization direction |
| CN112563864A (en) * | 2020-12-15 | 2021-03-26 | 上海理工大学 | Terahertz transmitter based on spin filtering and preparation method thereof |
| CN113437211A (en) * | 2021-06-25 | 2021-09-24 | 上海理工大学 | Terahertz wave modulator based on magnetic tunnel junction and preparation method thereof |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007300022A (en) * | 2006-05-02 | 2007-11-15 | Material Design Factory:Kk | Terahertz wave amplifier, terahertz wave modulator, and communication apparatus, and sensing apparatus using it |
| US7978394B1 (en) * | 2008-03-17 | 2011-07-12 | The United States Of America As Represented By The Secretary Of The Navy | Magnetic spin based photonic/plasmonic devices |
| CN102496835A (en) * | 2011-12-20 | 2012-06-13 | 上海理工大学 | m-i-n diode terahertz radiation source of ultra-pure intrinsic gallium arsenide material and production method thereof |
| US20130154633A1 (en) * | 2010-08-27 | 2013-06-20 | Riken | Electric current-spin current conversion device |
| CN105914564A (en) * | 2016-06-14 | 2016-08-31 | 西南交通大学 | High-strength broadband terahertz wave generator |
| CN106817124A (en) * | 2015-11-30 | 2017-06-09 | 中国科学院物理研究所 | Terahertz signal generator based on spintronics devices |
| CN106896081A (en) * | 2015-12-21 | 2017-06-27 | 中国科学院物理研究所 | THz wave meteorological detection device |
| CN108023263A (en) * | 2017-11-20 | 2018-05-11 | 中国工程物理研究院电子工程研究所 | A kind of magnetic field and the terahertz pulse generator of regulating and controlling voltage |
| CN108963724A (en) * | 2018-08-01 | 2018-12-07 | 中国工程物理研究院电子工程研究所 | Dielectric-metal photonic crystal, preparation method and terahertz pulse generator |
| CN109411993A (en) * | 2018-12-28 | 2019-03-01 | 中国工程物理研究院电子工程研究所 | A kind of THz wave generator based on exchange bias magnetic field |
| CN109478577A (en) * | 2016-07-20 | 2019-03-15 | 新加坡国立大学 | Terahertz emission transmitter |
| CN109818234A (en) * | 2019-02-26 | 2019-05-28 | 中国科学技术大学 | A kind of intensity and polarization actively adjustable THz wave transmitter |
| CN209626634U (en) * | 2019-04-08 | 2019-11-12 | 北京航空航天大学 | One kind controlling magnetized spinning electron THz wave transmitter based on voltage |
| US20210199571A1 (en) * | 2019-12-26 | 2021-07-01 | Wisconsin Alumni Research Foundation | Narrowband, acoustically mediated spintronic terahertz emitter |
-
2019
- 2019-04-08 CN CN201910274974.1A patent/CN109830874B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007300022A (en) * | 2006-05-02 | 2007-11-15 | Material Design Factory:Kk | Terahertz wave amplifier, terahertz wave modulator, and communication apparatus, and sensing apparatus using it |
| US7978394B1 (en) * | 2008-03-17 | 2011-07-12 | The United States Of America As Represented By The Secretary Of The Navy | Magnetic spin based photonic/plasmonic devices |
| US20130154633A1 (en) * | 2010-08-27 | 2013-06-20 | Riken | Electric current-spin current conversion device |
| CN102496835A (en) * | 2011-12-20 | 2012-06-13 | 上海理工大学 | m-i-n diode terahertz radiation source of ultra-pure intrinsic gallium arsenide material and production method thereof |
| CN106817124A (en) * | 2015-11-30 | 2017-06-09 | 中国科学院物理研究所 | Terahertz signal generator based on spintronics devices |
| CN106896081A (en) * | 2015-12-21 | 2017-06-27 | 中国科学院物理研究所 | THz wave meteorological detection device |
| CN105914564A (en) * | 2016-06-14 | 2016-08-31 | 西南交通大学 | High-strength broadband terahertz wave generator |
| CN109478577A (en) * | 2016-07-20 | 2019-03-15 | 新加坡国立大学 | Terahertz emission transmitter |
| CN108023263A (en) * | 2017-11-20 | 2018-05-11 | 中国工程物理研究院电子工程研究所 | A kind of magnetic field and the terahertz pulse generator of regulating and controlling voltage |
| CN108963724A (en) * | 2018-08-01 | 2018-12-07 | 中国工程物理研究院电子工程研究所 | Dielectric-metal photonic crystal, preparation method and terahertz pulse generator |
| CN109411993A (en) * | 2018-12-28 | 2019-03-01 | 中国工程物理研究院电子工程研究所 | A kind of THz wave generator based on exchange bias magnetic field |
| CN109818234A (en) * | 2019-02-26 | 2019-05-28 | 中国科学技术大学 | A kind of intensity and polarization actively adjustable THz wave transmitter |
| CN209626634U (en) * | 2019-04-08 | 2019-11-12 | 北京航空航天大学 | One kind controlling magnetized spinning electron THz wave transmitter based on voltage |
| US20210199571A1 (en) * | 2019-12-26 | 2021-07-01 | Wisconsin Alumni Research Foundation | Narrowband, acoustically mediated spintronic terahertz emitter |
Non-Patent Citations (3)
| Title |
|---|
| GARIK TOROSYAN.ETL: "Optimized Spintronic Terahertz Emitters Based on Epitaxial Grown Fe/Pt Layer Structures", 《SCIENTIFIC REPORTS》, 22 January 2018 (2018-01-22), pages 1 * |
| HONGSONG QIU.ETL: "Magnetically and electrically polarization-tunable THz emitter with integrated ferromagnetic heterostructure and large-birefringence liquid crystal", 《APPLIED PHYSICS EXPRESS》 * |
| 张顺浓;朱伟骅;李炬赓;金钻明;戴晔;张宗芝;马国宏;姚建铨;: "铁磁异质结构中的超快自旋流调制实现相干太赫兹辐射", 物理学报, no. 19 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110535003A (en) * | 2019-08-21 | 2019-12-03 | 北京航空航天大学 | A kind of spin terahertz sources device and method |
| CN110687070A (en) * | 2019-10-17 | 2020-01-14 | 赫智科技(苏州)有限公司 | High-resolution terahertz signal transmitting and collecting method based on optical fiber |
| CN110687070B (en) * | 2019-10-17 | 2022-03-01 | 赫智科技(苏州)有限公司 | High-resolution terahertz signal transmitting and collecting method based on optical fiber |
| CN112103756A (en) * | 2020-10-12 | 2020-12-18 | 北京航空航天大学合肥创新研究院 | Spin terahertz transmitter with controllable polarization direction |
| CN112563864A (en) * | 2020-12-15 | 2021-03-26 | 上海理工大学 | Terahertz transmitter based on spin filtering and preparation method thereof |
| CN113437211A (en) * | 2021-06-25 | 2021-09-24 | 上海理工大学 | Terahertz wave modulator based on magnetic tunnel junction and preparation method thereof |
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