CN109817501A - A kind of array Terahertz vacuum triode device and its manufacturing method - Google Patents
A kind of array Terahertz vacuum triode device and its manufacturing method Download PDFInfo
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- CN109817501A CN109817501A CN201811621965.7A CN201811621965A CN109817501A CN 109817501 A CN109817501 A CN 109817501A CN 201811621965 A CN201811621965 A CN 201811621965A CN 109817501 A CN109817501 A CN 109817501A
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Abstract
The embodiment of the present invention discloses a kind of array Terahertz vacuum triode device and its manufacturing method.Wherein, the array Terahertz vacuum triode device includes substrate and the multiple Terahertz vacuum triodes being arranged in array on substrate, each Terahertz vacuum triode includes anode, vacuum passage layer and photocathode, anode is arranged on substrate, vacuum passage layer includes the first insulation material layer, door control electrode and the second insulation material layer, vacuum passage runs through the first insulation material layer, door control electrode and the second insulation material layer, door control electrode is arranged between the first insulation material layer and the second insulation material layer, the both ends of vacuum passage are arranged in photocathode and anode, the first insulation material layer is set between door control electrode and anode, the second insulation material layer is set between door control electrode and photocathode.Array Terahertz vacuum triode device and its manufacturing method provided in an embodiment of the present invention, extend the service life of array Terahertz vacuum triode device.
Description
Technical field
The present embodiments relate to photoelectron technical fields, and in particular to a kind of array Terahertz vacuum triode device
And its manufacturing method.
Background technique
In the prior art, Field Emission Triodes array technique is had already appeared, field emission electron tunneling effect is based on, in micro- point
High pressure is loaded on the field emission cold-cathode of type to reduce the barrier width of cathode surface, so that the free electron in cathode can be with
It releases, is emitted in vacuum from cathode surface.The field emission tripolar tube device for the array that the prior art produces, due to
The consistency of cathode array unit is bad, is difficult to realize large-scale manufacture.And it is inconsistent due to cathode array unit, very
To the phenomenon for electron emission occur and existing only in the cathode array unit of part.In addition, the field emission tripolar tube device of array exists
It needs to load higher electric field when work, is easy occur spark phenomenon between a cathode and an anode, sent out so as to cause the field of array
The service life of the field emission tripolar tube device of array is shortened in the damage for penetrating triode device.
Therefore, a kind of triode device how is proposed, the service life for being able to extend triode device becomes industry urgently
The important topic of solution.
Summary of the invention
For the defects in the prior art, the embodiment of the present invention provide a kind of array Terahertz vacuum triode device and
Its manufacturing method.
On the one hand, the embodiment of the present invention proposes a kind of array Terahertz vacuum triode device, including substrate and multiple
Terahertz vacuum triode, the multiple Terahertz vacuum triode are arranged in array over the substrate, in which:
Each Terahertz vacuum triode includes anode, vacuum passage layer and photocathode, and the anode is arranged in institute
It states on substrate, the vacuum passage layer includes the first insulation material layer, door control electrode and the second insulation material layer, in the vacuum
Vacuum passage is arranged in channel layer, and the vacuum passage runs through first insulation material layer, the door control electrode and described second
Insulation material layer, the door control electrode is arranged between first insulation material layer and second insulation material layer, described
The both ends of the vacuum passage are arranged in photocathode and the anode, and described is arranged between the door control electrode and the anode
Second insulation material layer, the photocathode, institute is arranged in one insulation material layer between the door control electrode and the photocathode
It states and forms seal chamber between vacuum passage layer and the anode.
Wherein, the multiple linear array arrangement of Terahertz vacuum triode.
Wherein, the multiple Terahertz vacuum triode rectangular array arrangement.
Wherein, the distance between two neighboring described Terahertz vacuum triode is 1~2 micron.
Wherein, the vacuum passage is in truncated cone-shaped, and the contact area of the photocathode and the vacuum passage is less than institute
State the contact area of anode Yu the vacuum passage.
On the other hand, the embodiment of the present invention provides three pole of array Terahertz vacuum described in a kind of any of the above-described embodiment
The manufacturing method of tube device, comprising:
The anode of multiple Terahertz vacuum triodes is formed on the substrate；Wherein, the multiple Terahertz vacuum triode
Anode be arranged in array；
The first insulation material layer is deposited respectively on the anode of each Terahertz vacuum triode；
Door control electrode is deposited respectively on the first insulation material layer of each Terahertz vacuum triode；
The second insulation material layer is deposited respectively in the door control electrode of each Terahertz vacuum triode；
It is carved in the second insulation material layer of each Terahertz vacuum triode, door control electrode and the first insulation material layer
Vacuum passage out is lost, the vacuum passage layer of each Terahertz vacuum triode is formed；
Photocathode is formed in light-transparent substrate material layer, the vacuum passage layer of each Terahertz vacuum triode is corresponding
One photocathode；
The vacuum passage layer of each Terahertz vacuum triode is spliced with corresponding photocathode.
Wherein, the linear array arrangement of anode of the multiple Terahertz vacuum triode.
Wherein, the anode rectangular array arrangement of the multiple Terahertz vacuum triode.
Wherein, the distance between anode of the two neighboring Terahertz vacuum triode is 1~2 micron.
Wherein, the door control electrode uses titanium nitride or graphene.
Array Terahertz vacuum triode device and its manufacturing method provided in an embodiment of the present invention, including substrate and more
A Terahertz vacuum triode, multiple Terahertz vacuum triodes are arranged in array on substrate, Terahertz vacuum triode packet
Anode, vacuum passage layer and photocathode are included, anode is arranged on substrate, and vacuum passage layer includes the first insulation material layer, gate
Pole processed and the second insulation material layer, door control electrode is arranged between the first insulation material layer and the second insulation material layer, in vacuum
Vacuum passage is arranged in channel layer, and vacuum passage runs through the first insulation material layer, door control electrode and the second insulation material layer, photocathode
The both ends of vacuum passage are set with anode, the first insulation material layer, door control electrode and light are set between door control electrode and anode
Second insulation material layer is set between cathode, seal chamber is formed between photocathode, vacuum passage layer and anode, due to when in use
Extra electric field is smaller, can reduce particle and return and bang, extend the service life of array Terahertz vacuum triode device.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it is clear that, the accompanying drawings in the following description is this hair
Bright some embodiments for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is the structural schematic diagram for the array Terahertz vacuum triode device that one embodiment of the invention provides；
Fig. 2 is the Terahertz vacuum triode for the array Terahertz vacuum triode device that one embodiment of the invention provides
The schematic diagram of the section structure；
Fig. 3 be another embodiment of the present invention provides array Terahertz vacuum triode device structural schematic diagram；
Fig. 4 is three pole of Terahertz vacuum for the array Terahertz vacuum triode device that further embodiment of this invention provides
The schematic diagram of the section structure of pipe；
Fig. 5 is that the process of the manufacturing method for the array Terahertz vacuum triode device that one embodiment of the invention provides is shown
It is intended to；
Fig. 6 a is the anode manufacture schematic diagram for the array Terahertz vacuum triode device that one embodiment of the invention provides；
Fig. 6 b is the first insulation material layer of the array Terahertz vacuum triode device that one embodiment of the invention provides
Manufacture schematic diagram；
Fig. 6 c is that the door control electrode manufacture for the array Terahertz vacuum triode device that one embodiment of the invention provides is shown
It is intended to；
Fig. 6 d is the second insulation material layer of the array Terahertz vacuum triode device that one embodiment of the invention provides
Manufacture schematic diagram；
Fig. 6 e is that the vacuum passage manufacture for the array Terahertz vacuum triode device that one embodiment of the invention provides is shown
It is intended to；
Fig. 6 f is the photocathode manufacture signal for the array Terahertz vacuum triode device that one embodiment of the invention provides
Figure；
Fig. 6 g is the vacuum passage layer and light for the array Terahertz vacuum triode device that one embodiment of the invention provides
The splicing schematic diagram of cathode；
Description of symbols:
1- substrate；2- Terahertz vacuum triode；
21- anode；The first insulation material layer of 22-；
23- control electrodes；The second insulation material layer of 24-；
25- vacuum passage layer；26- photocathode；
27- vacuum passage；61- substrate；
62- anode；The first insulation material layer of 63-；
64- control electrodes；The second insulation material layer of 65-；
66- vacuum passage layer；67- light-transparent substrate material layer；
68- photocathode；69- vacuum passage.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached in the embodiment of the present invention
Figure, technical solution in the embodiment of the present invention are explicitly described, it is clear that described embodiment is a part of the invention
Embodiment, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not making wound
Every other embodiment obtained under the premise of the property made labour, shall fall within the protection scope of the present invention.
Fig. 1 is the structural schematic diagram for the array Terahertz vacuum triode device that one embodiment of the invention provides, and Fig. 2 is
The cross-section structure of the Terahertz vacuum triode for the array Terahertz vacuum triode device that one embodiment of the invention provides shows
It is intended to, as depicted in figs. 1 and 2, array Terahertz vacuum triode device provided in an embodiment of the present invention, including 1 He of substrate
Multiple Terahertz vacuum triodes 2, multiple Terahertz vacuum triodes 2 are arranged in array on substrate 1, in which:
Each Terahertz vacuum triode 2 includes anode 21, vacuum passage layer 25 and photocathode 26, and the setting of anode 21 is serving as a contrast
On bottom 1, vacuum passage layer 25 includes the first insulation material layer 22, door control electrode 23 and the second insulation material layer 24, is led in vacuum
Vacuum passage 27 is arranged in channel layer 25, and vacuum passage 27 runs through the first insulation material layer 22, door control electrode 23 and the second insulating materials
Layer 24, door control electrode 23 are arranged between the first insulation material layer 22 and the second insulation material layer 24, photocathode 26 and anode 21
The both ends of vacuum passage 25 are set, the first insulation material layer 22, door control electrode 23 are set between door control electrode 23 and anode 21
Second insulation material layer 24 is set between photocathode 26, forms sealing between photocathode 26, vacuum passage layer 25 and anode 21
Chamber 27.
Specifically, substrate 1 can use silicon substrate or high temperature-resistant liner bottom, substrate 1 with a thickness of 0.5~5 millimeter.It is multiple
Terahertz vacuum triode 2 can linear array arrangement or rectangular array arrangement.Anode 21 can be higher using conductivity
Metal, such as aluminium.First insulation material layer 22 with a thickness of 1.5~3 microns.Door control electrode 23 can using titanium nitride or
Graphene, door control electrode 23 with a thickness of 200~1000 nanometers.Second insulation material layer 24 with a thickness of 3~7 microns.Time
Pole 26 with a thickness of 100 rans, photocathode 26 can use metal photocathode negative electron affinity photocathode or positive electricity
Sub- affinity photocathode.The shape of vacuum passage layer 25 can cylindrical, cuboid or square, vacuum passage 27 can
In truncated cone-shaped, cylinder, cuboid, the square bodily form and prismatic table shape.The inside of the seal chamber is vacuum, vacuum passage 27
Through the first insulation material layer 22, door control electrode 23 and the second insulation material layer 24.Wherein, the thickness of anode 21 is according to practical need
It is configured, the embodiment of the present invention is without limitation.
For each Terahertz vacuum triode 2 of the array Terahertz vacuum triode device, 21 conduct of anode
Emitter of the collector, photocathode 26 of Terahertz vacuum triode 2 as Terahertz vacuum triode, 23 conduct of door control electrode
The base stage of Terahertz vacuum triode.Terahertz vacuum triode 2 at work, adds between door control electrode 23 and photocathode 26
Carried terahertz signal, under the irradiation of continuous wave laser or long-pulse laser, the photocathode 26 of Terahertz vacuum triode 2
Launching electronics beam group, under the control of the terahertz signal of door control electrode 23, electron beam group is transmitted respectively by vacuum passage 27
To door control electrode 23 and anode 21, thus realize the high current signal of the low current signal control anode 21 of a control electrode 23
Physical process.Array Terahertz vacuum triode device provided in an embodiment of the present invention, each Terahertz vacuum triode 2
Electron-emission uniformity and consistency are preferable, can realize the enlarging function to Terahertz small-signal in Terahertz frequency range.
Array Terahertz vacuum triode device provided in an embodiment of the present invention, including substrate and multiple Terahertz vacuum
Triode, multiple Terahertz vacuum triodes are arranged in array on substrate, and Terahertz vacuum triode includes that anode, vacuum are logical
Channel layer and photocathode, anode are arranged on substrate, and vacuum passage layer includes the first insulation material layer, door control electrode and the second insulation
Vacuum passage is arranged in vacuum passage layer in material layer, and vacuum passage is through the first insulation material layer, door control electrode and the second insulation
Material layer, door control electrode are arranged between the first insulation material layer and the second insulation material layer, and photocathode and anode are arranged true
The first insulation material layer is arranged in the both ends in empty channel between door control electrode and anode, is arranged between door control electrode and photocathode
Two insulation material layers form seal chamber between photocathode, vacuum passage layer and anode, since extra electric field is smaller when in use,
Particle can be reduced and returned and banged, the service life of array Terahertz vacuum triode device is extended.
Fig. 3 be another embodiment of the present invention provides array Terahertz vacuum triode device structural schematic diagram, such as
Shown in Fig. 3, on the basis of the various embodiments described above, further, the linear array arrangement of multiple Terahertz vacuum triodes 2.
Wherein, the quantity of Terahertz vacuum triode 2 is configured according to actual needs, and the embodiment of the present invention is without limitation.
As shown in Figure 1, multiple 2 rectangular array of Terahertz vacuum triode arrangements.Wherein, Terahertz vacuum triode 2
Quantity be configured according to actual needs, the embodiment of the present invention is without limitation.
On the basis of the various embodiments described above, further, the distance between two neighboring Terahertz vacuum triode 2 is
1~2 micron.
Fig. 4 is three pole of Terahertz vacuum for the array Terahertz vacuum triode device that further embodiment of this invention provides
The schematic diagram of the section structure of pipe, as shown in figure 4, further, vacuum passage 27 is in rotary table on the basis of the various embodiments described above
Shape, and the contact area of photocathode 26 and vacuum passage 27 is less than the contact area of anode 21 and vacuum passage 27, in this way can be with
It reduces and is got on vacuum passage wall by the electronics that the excitation of photocathode 26 generates, reduce the loss of energy.
Fig. 5 is that the process of the manufacturing method for the array Terahertz vacuum triode device that one embodiment of the invention provides is shown
It is intended to, as shown in figure 5, three pole of array Terahertz vacuum described in a kind of any of the above-described embodiment provided in an embodiment of the present invention
The manufacturing method of tube device, comprising:
S501, the anode that multiple Terahertz vacuum triodes are formed on the substrate；Wherein, the multiple Terahertz vacuum three
The anode of pole pipe is arranged in array；
Specifically, when manufacturing array Terahertz vacuum triode device, can use chemical vapor deposition method or
Person's physical vapor deposition process produces the anode of multiple Terahertz vacuum triodes on substrate, and each anode is in array
Arrangement, such as linear array arrangement or rectangular array arrangement, the anode can be using higher metals of conductivity such as aluminium.Its
In, the substrate can use silicon substrate or high temperature-resistant liner bottom, the substrate with a thickness of 0.5~5 millimeter；The anode
Thickness is configured based on practical experience, and the embodiment of the present invention is without limitation.
S502, the first insulation material layer is deposited respectively on the anode of each Terahertz vacuum triode；
Specifically, after the anode for producing each Terahertz vacuum triode over the substrate, chemistry is utilized
Vapor deposition process or physical vapor deposition process deposit first absolutely on the anode of each Terahertz vacuum triode
Edge material layer, first insulation material layer with a thickness of 1.5~3 microns.
S503, door control electrode is deposited respectively on the first insulation material layer of each Terahertz vacuum triode；
Specifically, after the first insulation material layer for obtaining each Terahertz vacuum triode, chemical gas is utilized
Phase depositing technics or physical vapor deposition process are sunk on the first insulation material layer of each Terahertz vacuum triode
Product door control electrode, the door control electrode with a thickness of 0.2~1 micron, the door control electrode can be using titanium nitride, graphene etc.
The material of relatively thin high conductivity.
S504, the second insulation material layer is deposited respectively in the door control electrode of each Terahertz vacuum triode；
Specifically, after the door control electrode for obtaining each Terahertz vacuum triode, chemical vapor deposition is utilized
Technique or physical vapor deposition process deposit the second insulation material in the door control electrode of each Terahertz vacuum triode
The bed of material, second insulation material layer with a thickness of 3~7 microns.
S505, in the second insulation material layer, door control electrode and the first insulation material of each Terahertz vacuum triode
The bed of material etches vacuum passage, forms the vacuum passage layer of each Terahertz vacuum triode；
It specifically, can be using dry after the second insulation material layer for obtaining each Terahertz vacuum triode
The mode of method etching, to the second insulation material layer, door control electrode and the first insulation material of each Terahertz vacuum triode
The bed of material performs etching, and obtains the vacuum passage of each Terahertz vacuum triode, etches each Terahertz vacuum
First insulation material layer, the door control electrode and second insulation material layer of the vacuum passage of triode form vacuum
Channel layer.The shape of the vacuum passage can be cylinder, truncated cone-shaped, cuboid or prismatic table shape, the vacuum passage
Length and second insulation material layer thickness, the thickness of the door control electrode and the thickness of first insulation material layer
The sum of it is equal, i.e., the described vacuum passage run through second insulation material layer, the door control electrode and first insulating materials
Layer.The shape of the vacuum passage layer can cylindrical, the square bodily form or cuboid.
S506, photocathode, the vacuum passage of each Terahertz vacuum triode are formed in light-transparent substrate material layer
The corresponding photocathode of layer；
Specifically, photocathode with a thickness of 100 rans, it is very thin, need the base of a support photocathode
Bottom, in the vacuum chamber of photocathode production platform, deposition forms the photocathode in light-transparent substrate material layer, it is each described too
The corresponding photocathode of the vacuum passage layer of hertz vacuum triode, the quantity for the photocathode produced and the vacuum are logical
The quantity of channel layer is equal.Wherein, the light-transparent substrate material layer can be using translucent materials such as sapphires；The light-transparent substrate material
The thickness of the bed of material is configured according to actual needs, and the embodiment of the present invention is without limitation.
S507, the vacuum passage layer of each Terahertz vacuum triode is spliced with corresponding photocathode.
Specifically, after having made multiple photocathodes, in another vacuum chamber of photocathode production platform
The vacuum passage of each Terahertz vacuum triode is spliced with corresponding photocathode, keeps each Terahertz true
The seal chamber that vacuum is formed between the photocathode of empty triode, vacuum passage layer and anode, to produce the array too
Hertz vacuum triode device.
The manufacturing method of array Terahertz vacuum triode device provided in an embodiment of the present invention, is formed on the substrate more
The anode of a Terahertz vacuum triode deposits the first insulating materials on the anode of each Terahertz vacuum triode respectively
Layer, deposits door control electrode on the first insulation material layer of each Terahertz vacuum triode, in each Terahertz vacuum respectively
The second insulation material layer is deposited respectively in the door control electrode of triode, in the second insulating materials of each Terahertz vacuum triode
Layer, door control electrode and the first insulation material layer etch vacuum passage, form the vacuum passage of each Terahertz vacuum triode
Layer forms photocathode, the vacuum passage layer of an each Terahertz vacuum triode corresponding time in light-transparent substrate material layer
Pole splices the vacuum passage layer of each Terahertz vacuum triode with corresponding photocathode, completes array Terahertz
The manufacture of vacuum triode device, extra electric field is smaller when in use for the array Terahertz vacuum triode device produced,
Particle can be reduced and returned and banged, the service life of array Terahertz vacuum triode is extended.In addition, the embodiment of the present invention provides
Array Terahertz vacuum triode device manufacturing method, process flow is simple, easy to accomplish, with semiconducter process
Compatibility is higher, is advantageously implemented large-scale Integrated manufacture.
On the basis of the various embodiments described above, further, the anode of the multiple Terahertz vacuum triode is linear
Array arrangement.
On the basis of the various embodiments described above, further, the anode of the multiple Terahertz vacuum triode is in rectangle
Array arrangement.
On the basis of the various embodiments described above, further, the anode of the two neighboring Terahertz vacuum triode it
Between distance be 1~2 micron.
On the basis of the various embodiments described above, further, the door control electrode uses titanium nitride or graphene.
Below to be manufactured using the manufacturing method of array Terahertz vacuum triode device provided in an embodiment of the present invention
For the process of one array Terahertz vacuum triode device, the array that embodiment that the present invention will be described in detail provides is too
The realization process of the manufacturing method of hertz vacuum triode device:
Fig. 6 a is the anode manufacture schematic diagram for the array Terahertz vacuum triode device that one embodiment of the invention provides,
As shown in Figure 6 a, multiple Terahertz vacuum triodes are produced on the substrate 61 of 1 millimeters thick using chemical vapor deposition method
With a thickness of 500 nanometers of anode 62, anode 62 can use aluminium, and substrate 61 uses silicon substrate.Wherein, multiple Terahertz vacuum
The linear array arrangement of anode 62 of triode, as shown in figure 3, the distance between two neighboring anode is 1.5 microns.
Fig. 6 b is the first insulation material layer of the array Terahertz vacuum triode device that one embodiment of the invention provides
Manufacture schematic diagram, as shown in Figure 6 b, using chemical vapor deposition method each Terahertz vacuum triode anode 62
The first insulation material layer 63 of upper deposition, the first insulation material layer 63 with a thickness of 2 microns.
Fig. 6 c is that the door control electrode manufacture for the array Terahertz vacuum triode device that one embodiment of the invention provides is shown
Be intended to, as fig. 6 c, using chemical vapor deposition method each Terahertz vacuum triode the first insulating materials
One layer of graphene of deposition be as door control electrode 64 on layer 63, door control electrode 64 with a thickness of 500 nanometers.
Fig. 6 d is the second insulation material layer of the array Terahertz vacuum triode device that one embodiment of the invention provides
Schematic diagram is manufactured, as shown in fig 6d, the door using chemical vapor deposition method in each Terahertz vacuum triode controls
Deposit the second insulation material layer 65 on pole 64, the second insulation material layer 65 with a thickness of 5 microns.
Fig. 6 e is that the vacuum passage manufacture for the array Terahertz vacuum triode device that one embodiment of the invention provides is shown
It is intended to, as shown in fig 6e, to the second insulation material layer of each Terahertz vacuum triode by the way of dry etching
65, door control electrode 64 and the first insulation material layer 63 perform etching, and the vacuum for obtaining each Terahertz vacuum triode is logical
Road 69, the first insulation material layer 63, door control electrode 64 and the second insulation material layer 65 for etching vacuum passage 69 form vacuum
Channel layer 66.Vacuum passage 69 is cylindrical, the length on the thickness direction of the first insulation material layer 63 of vacuum passage 69
It is 7.5 microns, i.e., vacuum passage 69 runs through the second insulation material layer 65, door control electrode 64 and the first insulation material layer 63.Wherein,
The shape of vacuum passage layer 66 can be in cuboid.
Fig. 6 f is the photocathode manufacture signal for the array Terahertz vacuum triode device that one embodiment of the invention provides
Figure in the vacuum chamber of photocathode production platform, deposits shape in the light-transparent substrate material layer 67 of 1 millimeters thick as shown in Figure 6 f
At the photocathode 68 of 100 nanometer thickness, photocathode 68 is metal photocathode, and light-transparent substrate material layer 67 uses sapphire, produces
Photocathode 68 quantity it is equal with the quantity of vacuum passage layer 66.
Fig. 6 g is the vacuum passage layer and light for the array Terahertz vacuum triode device that one embodiment of the invention provides
The splicing schematic diagram of cathode, as shown in figure 6g, photocathode production platform another vacuum chamber by each terahertz
Hereby the vacuum passage layer 66 of vacuum triode is spliced with photocathode 68, makes photocathode 68, vacuum passage layer 66 and anode 62
Between formed vacuum seal chamber, to complete the manufacture of the array Terahertz vacuum triode device.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
Present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: it still may be used
To modify the technical solutions described in the foregoing embodiments or equivalent replacement of some of the technical features；
And these are modified or replaceed, technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution spirit and
Range.
Claims (10)
1. a kind of array Terahertz vacuum triode device, which is characterized in that including substrate and multiple three poles of Terahertz vacuum
Pipe, the multiple Terahertz vacuum triode are arranged in array over the substrate, in which:
Each Terahertz vacuum triode includes anode, vacuum passage layer and photocathode, and the anode is arranged in the lining
On bottom, the vacuum passage layer includes the first insulation material layer, door control electrode and the second insulation material layer, in the vacuum passage
Layer setting vacuum passage, the vacuum passage is through first insulation material layer, the door control electrode and second insulation
Material layer, the door control electrode are arranged between first insulation material layer and second insulation material layer, the time
The both ends of the vacuum passage are arranged in pole and the anode, and described first is arranged between the door control electrode and the anode absolutely
Edge material layer, is arranged second insulation material layer between the door control electrode and the photocathode, the photocathode, described true
Seal chamber is formed between empty channel layer and the anode.
2. triode device according to claim 1, which is characterized in that the multiple Terahertz vacuum triode is linear
Array arrangement.
3. triode device according to claim 1, which is characterized in that the multiple Terahertz vacuum triode is in rectangle
Array arrangement.
4. triode device according to claim 1, which is characterized in that the two neighboring Terahertz vacuum triode it
Between distance be 1~2 micron.
5. triode device according to any one of claims 1 to 4, which is characterized in that the vacuum passage is in truncated cone-shaped,
And the contact area of the photocathode and the vacuum passage is less than the contact area of the anode and the vacuum passage.
6. a kind of manufacturing method of such as array Terahertz vacuum triode device described in any one of claim 1 to 5, special
Sign is, comprising:
The anode of multiple Terahertz vacuum triodes is formed on the substrate；Wherein, the sun of the multiple Terahertz vacuum triode
Pole is arranged in array；
The first insulation material layer is deposited respectively on the anode of each Terahertz vacuum triode；
Door control electrode is deposited respectively on the first insulation material layer of each Terahertz vacuum triode；
The second insulation material layer is deposited respectively in the door control electrode of each Terahertz vacuum triode；
It is etched in the second insulation material layer, door control electrode and the first insulation material layer of each Terahertz vacuum triode
Vacuum passage forms the vacuum passage layer of each Terahertz vacuum triode；
Photocathode is formed in light-transparent substrate material layer, the vacuum passage layer of each Terahertz vacuum triode is one corresponding
The photocathode；
The vacuum passage layer of each Terahertz vacuum triode is spliced with corresponding photocathode.
7. according to the method described in claim 6, it is characterized in that, the anode of the multiple Terahertz vacuum triode is linear
Array arrangement.
8. according to the method described in claim 6, it is characterized in that, the anode of the multiple Terahertz vacuum triode is in rectangle
Array arrangement.
9. according to the method described in claim 6, it is characterized in that, the anode of the two neighboring Terahertz vacuum triode it
Between distance be 1~2 micron.
10. according to the described in any item methods of claim 6 to 9, which is characterized in that the door control electrode using titanium nitride or
Graphene.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1839456A (en) * | 2003-07-22 | 2006-09-27 | 曳达研究和发展有限公司 | Electron emission device |
| CN104299988A (en) * | 2014-09-26 | 2015-01-21 | 中国科学院半导体研究所 | Nano vacuum triode with planar emitting cathode and manufacturing method thereof |
| CN105118762A (en) * | 2015-08-24 | 2015-12-02 | 中国科学院半导体研究所 | Nanometer vacuum triode structure with flip-chip-type anode, and preparation method |
-
2018
- 2018-12-28 CN CN201811621965.7A patent/CN109817501A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1839456A (en) * | 2003-07-22 | 2006-09-27 | 曳达研究和发展有限公司 | Electron emission device |
| CN104299988A (en) * | 2014-09-26 | 2015-01-21 | 中国科学院半导体研究所 | Nano vacuum triode with planar emitting cathode and manufacturing method thereof |
| CN105118762A (en) * | 2015-08-24 | 2015-12-02 | 中国科学院半导体研究所 | Nanometer vacuum triode structure with flip-chip-type anode, and preparation method |
Non-Patent Citations (1)
| Title |
|---|
| 戴军等: ""太赫兹半导体真空晶体管的初步研究"", 《中国电子学会真空电子学分会第二十一届学术年会论文集》 * |
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Application publication date: 20190528 |