CN109788218A - The enhanced dot structure of driving suitable for large area array cmos image sensor - Google Patents
The enhanced dot structure of driving suitable for large area array cmos image sensor Download PDFInfo
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Abstract
The present invention discloses the enhanced dot structure of driving suitable for large area array cmos image sensor, including N-type metal-oxide-semiconductor M1-M7, M1 is pixel transmission pipe, M2 is the reset transistor of FD node, M6 is source level follower, M7 is pixel gate tube, M3-M5 is switching tube, the source of M1 connects photodiode, drain terminal connects FD node, the source of M2 connects FD node, drain terminal meets supply voltage VDD, the source of M3 connects FD node, drain terminal connects the source of M4 and the grid of M6, the drain terminal of M6 meets power vd D, source connects the drain terminal of M7, the source terminated nodes B of M7, the drain-source end of M5 meets node A respectively, node B, the leakage terminated nodes A of M4.Pixel SF multiplexing may be implemented in the present invention, and the column bus circuit structure of multistage SF can effectively reduce the influence of ghost effect with drive part by part parasitic capacitance.
Description
Technical field
The present invention relates to technical field of integrated circuits, more particularly to a kind of suitable for large area array cmos image sensor
Drive enhanced dot structure.
Background technique
In cmos image sensor field, pixel array is bigger, and resolution ratio is higher, and the photo effect shot is better,
Image is finer and smoother.With aerospace and the development of war industry, cmos image sensor be gradually applied to remote sensing camera,
The space explorations such as star sensor field, it is also more urgent to the needs of high-resolution imaging sensor, the pixel scale of construction gradually to
Hundred million grades of development.
As shown in Figure 1, for large area array cmos image sensor, source follower (source follower, SF) it is defeated
Outlet is very long, with very big dead resistance and parasitic capacitance effect, as floating diffusion (floating diffusion, FD)
When the voltage change of node, reflect that the voltage to column bus output node will generate very big delay, seriously affect sensor frame
The promotion of rate.
I.e. in large area array cmos image sensor, since column bus is long, it might even be possible to reach 180mm, parasitic capacitance
It is bigger, it can make the voltage of column bus output node that could stablize by long delay.
The method used at this stage mainly reduces metal line-width and carries out metal routing in high level to reduce as far as possible
Ghost effect, but the pixel array for can be used metal layer less, effect are very limited.
Summary of the invention
In view of the technical drawbacks of the prior art, it is an object of the present invention to provide one kind to be suitable for large area array CMOS
The enhanced dot structure of the driving of imaging sensor is a kind of enhanced dot structure of driving that SF multiplexing may be implemented, can be with
The delay time for shortening the output of column bus signal makes output voltage fast and stable, improves frame frequency.
The technical solution adopted to achieve the purpose of the present invention is:
A kind of enhanced dot structure of driving suitable for large area array cmos image sensor, including N-type metal-oxide-semiconductor M1-M7,
Metal-oxide-semiconductor M1 is pixel transmission pipe, and metal-oxide-semiconductor M2 is the reset transistor of FD node, and metal-oxide-semiconductor M6 is source level follower, and metal-oxide-semiconductor M7 is pixel
Gate tube, metal-oxide-semiconductor M3-M5 are switching tube, and the source of metal-oxide-semiconductor M1 connects photodiode, and drain terminal connects FD node, the source of metal-oxide-semiconductor M2
FD node is terminated, drain terminal meets supply voltage VDD, and the source of metal-oxide-semiconductor M3 connects FD node, and drain terminal connects the source and metal-oxide-semiconductor of metal-oxide-semiconductor M4
The grid of M6, the drain terminal access node A of metal-oxide-semiconductor M4, the drain terminal of metal-oxide-semiconductor M6 meet power vd D, and source connects the drain terminal of metal-oxide-semiconductor M7,
The source terminated nodes B of metal-oxide-semiconductor M7, the drain-source end of metal-oxide-semiconductor M5 are respectively connected to node A, node B.
Compared with prior art, the beneficial effects of the present invention are:
Three switches are added on the basis of traditional 4T dot structure in the enhanced dot structure of driving proposed by the present invention
Pipe M3-M5, may be implemented pixel SF multiplexing, and the column bus circuit structure of multistage SF can effectively be subtracted with drive part by part parasitic capacitance
The influence of small ghost effect.
Detailed description of the invention
The column bus ghost effect schematic diagram of Fig. 1 tradition 4T dot structure.
The enhanced dot structure figure of driving of Fig. 2 achievable SF multiplexing provided by the invention.
The implementation diagram of Fig. 3 pixel array provided by the invention.
The pixel configuration figure of Fig. 4 second level SF driving provided by the invention.
The ghost effect contrast schematic diagram that Fig. 5 tradition 4T dot structure and second level SF of the invention drive.
Specific embodiment
The present invention is described in further detail below in conjunction with the drawings and specific embodiments.It should be appreciated that described herein
Specific embodiment be only used to explain the present invention, be not intended to limit the present invention.
The present invention realizes on the basis of traditional 4T dot structure, off working state pixel can be become relaying SF, realized
Too long column bus is truncated into multistage by pixel SF multiplexing, and drive part by part can effectively reduce column bus parasitic capacitance and pass to signal
The influence of defeated delay.
As shown, the enhanced dot structure of driving suitable for large area array cmos image sensor of the invention includes: N
Type metal-oxide-semiconductor M1-M7, M1 are pixel transmission pipe, and M2 is the reset transistor of FD node, and M6 is source level follower (source
Follower, SF), M7 is pixel gate tube, and M3-M5 is switching tube, and the source of M1 meets photodiode PPD, and drain terminal connects FD section
Point, the source of M2 connect FD node, and drain terminal meets supply voltage VDD, and the source of M3 connects FD node, and drain terminal connects the source of M4 and the grid of M6
Pole, the drain terminal of drain terminal the access node A, M6 of M4 meet power vd D, and source connects the drain terminal of M7, the source terminated nodes B of M7, the leakage of M5
Source is respectively connected to node A, B.
The node A, B is the tie point of adjacent uplink and downlink pixel, i.e. the node A of this pixel connects the section of one-row pixels
The node B of point B, this pixel meet the node A of next line pixel.
As shown in figure 3,2N pixel column below pixel array, when reading the signal of 2N row pixel, switching tube
M3, M5 closure, switching tube M4 are disconnected, and are equivalent to traditional 4T dot structure；It is more into (2N-1) row that visual actual conditions choose the 1st
Row off working state pixel is set to relaying SF mode, switching tube M3, M5 disconnection, switching tube M4 closure.In the structure, due to arranging
Multistage SF is added in bus, the drive part by part of column bus may be implemented, effectively saves the charging time.
Fig. 4 show the pixel configuration figure of two-stage SF driving, and switching tube M3-M5 is indicated with switch.When reading 2N row picture
When the signal of element, switching tube M3, M5 closure, switching tube M4 is disconnected, and is equivalent to traditional 4T dot structure；Nth row of pixels are opened
Pipe M3 is closed, M5 is disconnected, and switching tube M4 closure, only SF pipe and gate tube access circuit, is equivalent to relaying SF.In the structure, by
In second level source level follower is added, it is equivalent to and complete column bus W originally is truncated into shorter two-section column bus W1 and W2, when
When the FD node voltage variation of 2N row pixel, the voltage of FD node is transmitted to nth row of pixels by metal wire W1 by SF
Signal is transmitted to output node by another section of metal wire W2 by relaying SF by node A.The SF drive signal line of 2N row pixel
W1, the SF drive signal line W2 of nth row of pixels.
Since the length of W1 and W2 is substantially the half of metal wire W length, parasitic capacitance and dead resistance are much smaller than
Metal wire W, as shown in figure 5, according to RC circuit charging principle, when charging between reach 3RtotalCtotal-5RtotalCtotalWhen, it fills
Electricity is basically completed, and is roughly calculated as follows.
1. traditional column bus scheme signal delay:
T=5RtotalCtotal=5 × 2R × 2C=20RC
2. secondary drive scheme signal is delayed:
T=5R1C1+5R2C2=5 × R × C+5 × R × C=10RC
Can be seen that drive part by part scheme from calculating above can effectively save the charging time.
The enhanced dot structure of a kind of driving suitable for large area array cmos image sensor proposed by the present invention, in use
Configuration is stated, the influence for effectively reducing column bus ghost effect can be driven by multistage SF, so that the electricity of column bus output node
Pressure energy is faster stable, increases the room for promotion of sensor frame frequency.
The above is only a preferred embodiment of the present invention, it is noted that for the common skill of the art
For art personnel, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications
Also it should be regarded as protection scope of the present invention.
Claims (1)
1. a kind of enhanced dot structure of driving suitable for large area array cmos image sensor, which is characterized in that including N-type
Metal-oxide-semiconductor M1-M7, metal-oxide-semiconductor M1 are pixel transmission pipe, and metal-oxide-semiconductor M2 is the reset transistor of FD node, and metal-oxide-semiconductor M6 is source level follower,
Metal-oxide-semiconductor M7 is pixel gate tube, and metal-oxide-semiconductor M3-M5 is switching tube, and the source of metal-oxide-semiconductor M1 connects photodiode, and drain terminal connects FD section
Point, the source of metal-oxide-semiconductor M2 connect FD node, and drain terminal meets supply voltage VDD, and the source of metal-oxide-semiconductor M3 connects FD node, and drain terminal connects metal-oxide-semiconductor
The source of M4 and the grid of metal-oxide-semiconductor M6, the drain terminal access node A of metal-oxide-semiconductor M4, the drain terminal of metal-oxide-semiconductor M6 meet power vd D, and source connects
The drain terminal of metal-oxide-semiconductor M7, the source terminated nodes B of metal-oxide-semiconductor M7, the drain-source end of metal-oxide-semiconductor M5 is respectively connected to node A, node B.
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Citations (5)
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|---|---|---|---|---|
| CN1213249A (en) * | 1997-09-29 | 1999-04-07 | 佳能株式会社 | Photoelectric conversion apparatus |
| US20160198108A1 (en) * | 2014-02-07 | 2016-07-07 | Rambus Inc. | Image sensor with multi-range readout |
| CN106454148A (en) * | 2016-11-15 | 2017-02-22 | 天津大学 | CMOS image sensor pixel structure based on blocked independent exposure and control method thereof |
| CN107534749A (en) * | 2015-11-30 | 2018-01-02 | 奥林巴斯株式会社 | Photographing element, endoscope and endoscopic system |
| CN109040630A (en) * | 2017-06-08 | 2018-12-18 | 三星电子株式会社 | The ramp signal generator of imaging sensor and imaging sensor including it |
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2018
- 2018-12-19 CN CN201811556586.4A patent/CN109788218A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1213249A (en) * | 1997-09-29 | 1999-04-07 | 佳能株式会社 | Photoelectric conversion apparatus |
| US20160198108A1 (en) * | 2014-02-07 | 2016-07-07 | Rambus Inc. | Image sensor with multi-range readout |
| CN107534749A (en) * | 2015-11-30 | 2018-01-02 | 奥林巴斯株式会社 | Photographing element, endoscope and endoscopic system |
| CN106454148A (en) * | 2016-11-15 | 2017-02-22 | 天津大学 | CMOS image sensor pixel structure based on blocked independent exposure and control method thereof |
| CN109040630A (en) * | 2017-06-08 | 2018-12-18 | 三星电子株式会社 | The ramp signal generator of imaging sensor and imaging sensor including it |
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| 聂凯明: "CMOS-TDI 图像传感器研究与芯片实现", 《优秀博士论文》 * |
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