CN109747055B - Preparation method and application of monocrystalline silicon wafer - Google Patents
Preparation method and application of monocrystalline silicon wafer Download PDFInfo
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- CN109747055B CN109747055B CN201910159650.3A CN201910159650A CN109747055B CN 109747055 B CN109747055 B CN 109747055B CN 201910159650 A CN201910159650 A CN 201910159650A CN 109747055 B CN109747055 B CN 109747055B
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 269
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 69
- 229910052710 silicon Inorganic materials 0.000 claims description 69
- 239000010703 silicon Substances 0.000 claims description 69
- 238000005520 cutting process Methods 0.000 claims description 58
- 239000000463 material Substances 0.000 claims description 58
- 239000013078 crystal Substances 0.000 claims description 41
- 238000005253 cladding Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 8
- 239000010985 leather Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 description 7
- 238000005266 casting Methods 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a preparation method of a monocrystalline silicon piece, which can cut a strip-shaped right-angle monocrystalline silicon piece and a monocrystalline silicon quasi square piece from a monocrystalline silicon rod, or cut the strip-shaped right-angle monocrystalline silicon piece and the monocrystalline silicon square piece from the monocrystalline silicon rod, and can improve the utilization rate of a monocrystalline silicon rod.
Description
Technical Field
The invention relates to a preparation method and application of a monocrystalline silicon wafer.
Background
The quasi-square slice or square slice of the monocrystalline silicon is formed by cutting a monocrystalline silicon rod, the monocrystalline silicon rod is cut firstly to obtain a quasi-square rod for preparing the quasi-square slice of the monocrystalline silicon or a square rod for preparing the square slice of the monocrystalline silicon, and then the quasi-square rod is sliced to prepare the quasi-square slice of the monocrystalline silicon or the square rod is sliced to prepare the square slice of the monocrystalline silicon.
The cutting of the silicon single crystal rod can generate edge skin materials, and the edge skin materials are generally used for returning to a furnace or being used as high-efficiency polycrystalline ingot casting seed crystals and the like, so that the utilization rate of the silicon single crystal rod is low.
Disclosure of Invention
The invention aims to provide a preparation method of a monocrystalline silicon piece, which can cut a strip-shaped right-angle monocrystalline silicon piece and a monocrystalline silicon quasi square piece from a monocrystalline silicon rod, or cut a strip-shaped right-angle monocrystalline silicon piece and a monocrystalline silicon square piece from a monocrystalline silicon rod, and can improve the utilization rate of a monocrystalline silicon rod.
In order to achieve the above object, the present invention provides a method for preparing a silicon single crystal wafer, which is used for preparing a strip-shaped right-angle silicon single crystal wafer and a silicon single crystal quasi-square piece, or for preparing a strip-shaped right-angle silicon single crystal wafer and a silicon single crystal square piece, comprising the steps of:
determining the length (a) and the width (b) of the strip-shaped right-angle monocrystalline silicon piece and the side length (L) of the monocrystalline silicon quasi square piece or square piece, wherein the width (b) of the strip-shaped right-angle monocrystalline silicon piece is smaller than the side length (L) of the monocrystalline silicon quasi square piece or square piece; determining the diameter (phi) of the monocrystalline silicon rod, wherein the side length (L) of the quasi-square piece or the square piece of the monocrystalline silicon is smaller than the diameter (phi) of the monocrystalline silicon rod; determining the length (H) of the silicon single crystal rod according to the length (a) of the strip-shaped right-angle monocrystalline silicon piece, so that the length (H) of the silicon single crystal rod is greater than the length (a) of the strip-shaped right-angle monocrystalline silicon piece; preparing a cylindrical silicon single crystal rod according to the determined diameter (phi) and length (H) of the silicon single crystal rod;
cutting off the head and the tail of the monocrystalline silicon rod, wherein the length (h) of the remaining section of the monocrystalline silicon rod is not less than the length (a) of the strip-shaped right-angle monocrystalline silicon piece; cutting the residual section of the monocrystalline silicon rod according to the determined side length (L) of the quasi square piece or the square piece of the monocrystalline silicon to obtain a quasi square rod for preparing the quasi square piece of the monocrystalline silicon or a square rod for preparing the square piece of the monocrystalline silicon, and obtaining four edge cladding materials, wherein the four edge cladding materials are cut along the length direction of the residual section of the monocrystalline silicon rod, and the four edge cladding materials are as long as the residual section of the monocrystalline silicon rod; each edge leather material comprises: a rectangular cutting surface formed by cutting and an arc surface opposite to the cutting surface; taking the cut surface as a datum plane; the joint part of the cutting surface and the cambered surface is taken as a sharp corner part;
slicing the quasi-square rod to obtain a monocrystalline silicon quasi-square piece, or slicing the square rod to obtain a monocrystalline silicon square piece;
cutting off each edge skin material according to the determined length (a) of the strip-shaped right-angle monocrystalline silicon piece, wherein each edge skin material is at least cut into an edge skin material section, and the length of the reference surface on each edge skin material section is consistent with the length (a) of the strip-shaped right-angle monocrystalline silicon piece; cutting off sharp corners on two sides of the small section of the edge skin material to obtain a silicon block for preparing the strip-shaped right-angle monocrystalline silicon piece, wherein the length and width of the reference surface on the silicon block are consistent with those of the strip-shaped right-angle monocrystalline silicon piece; and slicing the silicon block along the direction parallel to the reference surface on the silicon block to obtain the strip-shaped right-angle monocrystalline silicon piece.
Preferably, the ratio (L: b) of the side length (L) of the quasi square piece or square piece of the monocrystalline silicon to the width (b) of the strip-shaped right-angle monocrystalline silicon piece is taken as a first ratio; taking the ratio (phi: b) of the diameter (phi) of the single crystal silicon rod to the width (b) of the strip-shaped right-angle single crystal silicon wafer as a second ratio;
determining the width (b) of the strip-shaped right-angle monocrystalline silicon piece and a first ratio and a second ratio; the first ratio and the second ratio are both larger than 1, and the first ratio is smaller than the second ratio;
determining the side length (L) of a quasi square piece or a square piece of the monocrystalline silicon according to the width (b) of the strip-shaped right-angle monocrystalline silicon piece and the first ratio;
and determining the diameter (phi) of the single crystal silicon rod according to the width (b) of the strip-shaped right-angle single crystal silicon wafer and the second ratio.
Preferably, the ratio (a: b) of the length (a) of the strip-shaped right-angle monocrystalline silicon piece to the width (b) of the strip-shaped right-angle monocrystalline silicon piece is taken as a third ratio; and determining a third ratio, and determining the length (a) of the strip-shaped right-angle monocrystalline silicon piece according to the width (b) of the strip-shaped right-angle monocrystalline silicon piece and the third ratio.
Preferably, the first ratio and the difference between the first ratio and the second ratio are determined, and then the second ratio is determined according to the first ratio and the difference.
Preferably, the second ratio and the difference between the first ratio and the second ratio are determined, and then the first ratio is determined according to the second ratio and the difference.
Preferably, the cutting of the head and the tail of the silicon single crystal rod specifically comprises: and respectively cutting off the edges of the two axial ends of the single crystal silicon rod by 5-100 mm along the axial direction.
Preferably, the width (b) of the strip-shaped right-angle monocrystalline silicon piece is 12.5-200 mm.
Preferably, the thickness of the strip-shaped right-angle monocrystalline silicon piece is 50-220 um.
The invention also provides a solar cell module, and the strip-shaped right-angle monocrystalline silicon piece prepared by the preparation method is adopted.
Preferably, the solar cell module adopts the technology of tiling or splicing.
The invention has the advantages and beneficial effects that: the preparation method of the monocrystalline silicon piece can cut a strip-shaped right-angle monocrystalline silicon piece and a monocrystalline silicon quasi square piece from a monocrystalline silicon rod, or cut a strip-shaped right-angle monocrystalline silicon piece and a monocrystalline silicon square piece from a monocrystalline silicon rod, and can improve the utilization rate of a monocrystalline silicon rod.
The invention can determine the side length (L) of a quasi square piece or a square piece of monocrystalline silicon according to the width (b) of the strip-shaped right-angle monocrystalline silicon piece, and can also determine the diameter (phi) of a monocrystalline silicon rod according to the width (b) of the strip-shaped right-angle monocrystalline silicon piece; the invention can predetermine the dimension specification of the strip-shaped right-angle monocrystalline silicon piece, and determine the dimension specification of the monocrystalline silicon quasi square piece or square piece and the dimension specification of the monocrystalline silicon rod according to the dimension specification of the strip-shaped right-angle monocrystalline silicon piece, so that the dimension specification of the monocrystalline silicon rod is suitable for preparing the strip-shaped right-angle monocrystalline silicon piece with a specific dimension specification and the monocrystalline silicon quasi square piece or square piece with a specific dimension specification, and the synchronous preparation of the silicon pieces with two specific specifications is easy to realize, and the high-efficiency utilization of the monocrystalline silicon rod is easy to realize.
The invention also has the following characteristics:
1) with the development of a battery piece process, the size of a silicon chip is larger and larger, the shape of the silicon chip tends to be square, and the edge skin materials cut by the square of a cylindrical silicon rod are also larger and larger, so that the utilization rate of the silicon rod is lower and lower; the invention does not return the edge skin material to the furnace or use the edge skin material as the high-efficiency polycrystalline ingot casting seed crystal, but further cuts the edge skin material into strip-shaped right-angle monocrystalline silicon slices, thereby greatly improving the utilization rate of the silicon rod.
2) The direct melting of the edge skin material can increase energy consumption, the current photovoltaic industry pays particular attention to the energy consumption, and the edge skin material is further cut into strip-shaped right-angle monocrystalline silicon slices, so that energy can be saved.
3) The battery pieces used in the existing assembly technology of tiling, splicing and the like are all formed by cutting and slicing finished battery pieces (such as quasi square pieces or square pieces), and laser cutting equipment and slicing working hours need to be increased, so that the manufacturing cost of the assembly is increased; the invention can predetermine the dimension specification of the strip-shaped right-angle monocrystalline silicon piece, so the invention can directly prepare the strip-shaped right-angle monocrystalline silicon piece with the dimension specification suitable for the assembly technology of tiling, splicing and the like, and directly prepare the battery piece (namely the strip-shaped right-angle monocrystalline silicon battery piece) suitable for the assembly technology of tiling, splicing and the like through the matched battery piece production line, and the assembly end does not need to additionally increase the scribing and cutting process of the battery piece.
4) As mentioned above, the battery pieces used in the assembly technologies of the existing tile stacking, splicing and the like are all formed by cutting and slicing finished battery pieces (such as quasi-square pieces or square pieces), and the finished battery pieces are cut and sliced by laser, which can bring mechanical damage to the battery pieces and lead to the reduction of the electrical performance of the battery pieces; the invention can directly prepare the strip-shaped right-angle monocrystalline silicon battery piece suitable for assembly technologies such as tile stacking, piece splicing and the like, does not cut and piece the finished battery piece, and can avoid mechanical damage and electrical property reduction of the battery piece caused by laser cutting.
5) The invention can predetermine the dimension specification of the strip-shaped right-angle monocrystalline silicon piece and the dimension specification of the monocrystalline silicon quasi square piece or square piece, so the invention can improve the electrical property uniformity of the strip-shaped right-angle monocrystalline silicon piece by controlling the dimension of the strip-shaped right-angle monocrystalline silicon piece, and can improve the electrical property uniformity of the monocrystalline silicon quasi square piece or square piece by controlling the dimension of the monocrystalline silicon quasi square piece or square piece, thereby improving the comprehensive electrical property of the component.
6) Four corners of the strip-shaped right-angle monocrystalline silicon wafer prepared by the invention are right angles, and after the strip-shaped right-angle monocrystalline silicon wafer is made into a battery piece, the light receiving area can be increased, and the power generation power of the component is increased.
7) The preparation method of the monocrystalline silicon piece is suitable for the P-type monocrystalline silicon piece and the N-type monocrystalline silicon piece.
Detailed Description
The following further describes embodiments of the present invention with reference to examples. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
Example 1
The preparation method of the monocrystalline silicon piece is used for preparing the strip-shaped right-angle monocrystalline silicon piece and the monocrystalline silicon quasi square piece and comprises the following steps:
determining the length (a) and the width (b) of the strip-shaped right-angle monocrystalline silicon piece and the side length (L) of the monocrystalline silicon quasi square piece, wherein the width (b) of the strip-shaped right-angle monocrystalline silicon piece is smaller than the side length (L) of the monocrystalline silicon quasi square piece; determining the diameter (phi) of the silicon single crystal rod, wherein the side length (L) of the quasi square piece of the silicon single crystal is smaller than the diameter (phi) of the silicon single crystal rod; determining the length (H) of the silicon single crystal rod according to the length (a) of the strip-shaped right-angle monocrystalline silicon piece, so that the length (H) of the silicon single crystal rod is greater than the length (a) of the strip-shaped right-angle monocrystalline silicon piece; preparing a cylindrical silicon single crystal rod according to the determined diameter (phi) and length (H) of the silicon single crystal rod;
cutting off the head and the tail of the monocrystalline silicon rod, wherein the length (h) of the remaining section of the monocrystalline silicon rod is not less than the length (a) of the strip-shaped right-angle monocrystalline silicon piece; cutting the residual section of the monocrystalline silicon rod according to the determined side length (L) of the monocrystalline silicon quasi square piece to obtain a quasi square rod for preparing the monocrystalline silicon quasi square piece and four edge cladding materials, wherein the four edge cladding materials are cut along the length direction of the residual section of the monocrystalline silicon rod and are equal to the residual section of the monocrystalline silicon rod; each edge leather material comprises: a rectangular cutting surface formed by cutting and an arc surface opposite to the cutting surface; taking the cut surface as a datum plane; the joint part of the cutting surface and the cambered surface is taken as a sharp corner part;
slicing the quasi-square rod to obtain a monocrystalline silicon quasi-square piece;
cutting off each edge skin material according to the determined length (a) of the strip-shaped right-angle monocrystalline silicon piece, wherein each edge skin material is at least cut into an edge skin material section, and the length of the reference surface on each edge skin material section is consistent with the length (a) of the strip-shaped right-angle monocrystalline silicon piece; cutting off sharp corners on two sides of the small section of the edge skin material to obtain a silicon block for preparing the strip-shaped right-angle monocrystalline silicon piece, wherein the length and width of the reference surface on the silicon block are consistent with those of the strip-shaped right-angle monocrystalline silicon piece; and slicing the silicon block along the direction parallel to the reference surface on the silicon block to obtain the strip-shaped right-angle monocrystalline silicon piece.
Example 2
The preparation method of the monocrystalline silicon piece is used for preparing the strip-shaped right-angle monocrystalline silicon piece and the monocrystalline silicon square piece and comprises the following steps:
determining the length (a) and the width (b) of the strip-shaped right-angle monocrystalline silicon piece and the side length (L) of the monocrystalline silicon square piece, wherein the width (b) of the strip-shaped right-angle monocrystalline silicon piece is smaller than the side length (L) of the monocrystalline silicon square piece; determining the diameter (phi) of the silicon single crystal rod, wherein the side length (L) of the silicon single crystal square slice is smaller than the diameter (phi) of the silicon single crystal rod; determining the length (H) of the silicon single crystal rod according to the length (a) of the strip-shaped right-angle monocrystalline silicon piece, so that the length (H) of the silicon single crystal rod is greater than the length (a) of the strip-shaped right-angle monocrystalline silicon piece; preparing a cylindrical silicon single crystal rod according to the determined diameter (phi) and length (H) of the silicon single crystal rod;
cutting off the head and the tail of the monocrystalline silicon rod, wherein the length (h) of the remaining section of the monocrystalline silicon rod is not less than the length (a) of the strip-shaped right-angle monocrystalline silicon piece; cutting the remaining section of the monocrystalline silicon rod according to the determined side length (L) of the monocrystalline silicon square piece to obtain a square rod for preparing the monocrystalline silicon square piece and four edge skin materials, wherein the four edge skin materials are cut along the length direction of the remaining section of the monocrystalline silicon rod and are equal to the remaining section of the monocrystalline silicon rod in length; each edge leather material comprises: a rectangular cutting surface formed by cutting and an arc surface opposite to the cutting surface; taking the cut surface as a datum plane; the joint part of the cutting surface and the cambered surface is taken as a sharp corner part;
slicing the square rod to obtain a monocrystalline silicon square piece;
cutting off each edge skin material according to the determined length (a) of the strip-shaped right-angle monocrystalline silicon piece, wherein each edge skin material is at least cut into an edge skin material section, and the length of the reference surface on each edge skin material section is consistent with the length (a) of the strip-shaped right-angle monocrystalline silicon piece; cutting off sharp corners on two sides of the small section of the edge skin material to obtain a silicon block for preparing the strip-shaped right-angle monocrystalline silicon piece, wherein the length and width of the reference surface on the silicon block are consistent with those of the strip-shaped right-angle monocrystalline silicon piece; and slicing the silicon block along the direction parallel to the reference surface on the silicon block to obtain the strip-shaped right-angle monocrystalline silicon piece.
Example 3
The preparation method of the monocrystalline silicon piece is used for preparing the strip-shaped right-angle monocrystalline silicon piece and the monocrystalline silicon quasi square piece and comprises the following steps:
taking the ratio (L: b) of the side length (L) of the monocrystalline silicon quasi square piece to the width (b) of the strip-shaped right-angle monocrystalline silicon piece as a first ratio;
taking the ratio (phi: b) of the diameter (phi) of the single crystal silicon rod to the width (b) of the strip-shaped right-angle single crystal silicon wafer as a second ratio;
taking the ratio (a: b) of the length (a) of the strip-shaped right-angle monocrystalline silicon piece to the width (b) of the strip-shaped right-angle monocrystalline silicon piece as a third ratio;
determining the width (b) of the strip-shaped right-angle monocrystalline silicon piece, and a first ratio, a second ratio and a third ratio; the first ratio, the second ratio and the third ratio are all larger than 1, and the first ratio is smaller than the second ratio;
determining the side length (L) of the monocrystalline silicon quasi square piece according to the width (b) of the strip-shaped right-angle monocrystalline silicon piece and the first ratio;
determining the diameter (phi) of the single crystal silicon rod according to the width (b) of the strip-shaped right-angle single crystal silicon wafer and the second ratio;
determining the length (a) of the strip-shaped right-angle monocrystalline silicon piece according to the width (b) of the strip-shaped right-angle monocrystalline silicon piece and the third ratio;
determining the length (H) of the silicon single crystal rod according to the length (a) of the strip-shaped right-angle monocrystalline silicon piece, so that the length (H) of the silicon single crystal rod is greater than the length (a) of the strip-shaped right-angle monocrystalline silicon piece;
preparing a cylindrical silicon single crystal rod according to the determined diameter (phi) and length (H) of the silicon single crystal rod;
cutting off the head and the tail of the monocrystalline silicon rod, wherein the length (h) of the remaining section of the monocrystalline silicon rod is not less than the length (a) of the strip-shaped right-angle monocrystalline silicon piece; cutting the residual section of the monocrystalline silicon rod according to the determined side length (L) of the monocrystalline silicon quasi square piece to obtain a quasi square rod for preparing the monocrystalline silicon quasi square piece and four edge cladding materials, wherein the four edge cladding materials are cut along the length direction of the residual section of the monocrystalline silicon rod and are equal to the residual section of the monocrystalline silicon rod; each edge leather material comprises: a rectangular cutting surface formed by cutting and an arc surface opposite to the cutting surface; taking the cut surface as a datum plane; the joint part of the cutting surface and the cambered surface is taken as a sharp corner part;
slicing the quasi-square rod to obtain a monocrystalline silicon quasi-square piece;
cutting off each edge skin material according to the determined length (a) of the strip-shaped right-angle monocrystalline silicon piece, wherein each edge skin material is at least cut into an edge skin material section, and the length of the reference surface on each edge skin material section is consistent with the length (a) of the strip-shaped right-angle monocrystalline silicon piece; cutting off sharp corners on two sides of the small section of the edge skin material to obtain a silicon block for preparing the strip-shaped right-angle monocrystalline silicon piece, wherein the length and width of the reference surface on the silicon block are consistent with those of the strip-shaped right-angle monocrystalline silicon piece; and slicing the silicon block along the direction parallel to the reference surface on the silicon block to obtain the strip-shaped right-angle monocrystalline silicon piece.
Example 4
The preparation method of the monocrystalline silicon piece is used for preparing the strip-shaped right-angle monocrystalline silicon piece and the monocrystalline silicon square piece and comprises the following steps:
taking the ratio (L: b) of the side length (L) of the monocrystalline silicon square piece to the width (b) of the strip-shaped right-angle monocrystalline silicon piece as a first ratio;
taking the ratio (phi: b) of the diameter (phi) of the single crystal silicon rod to the width (b) of the strip-shaped right-angle single crystal silicon wafer as a second ratio;
taking the ratio (a: b) of the length (a) of the strip-shaped right-angle monocrystalline silicon piece to the width (b) of the strip-shaped right-angle monocrystalline silicon piece as a third ratio;
determining the width (b) of the strip-shaped right-angle monocrystalline silicon piece, and a first ratio, a second ratio and a third ratio; the first ratio, the second ratio and the third ratio are all larger than 1, and the first ratio is smaller than the second ratio;
determining the side length (L) of the monocrystalline silicon square piece according to the width (b) of the strip-shaped right-angle monocrystalline silicon piece and the first ratio;
determining the diameter (phi) of the single crystal silicon rod according to the width (b) of the strip-shaped right-angle single crystal silicon wafer and the second ratio;
determining the length (a) of the strip-shaped right-angle monocrystalline silicon piece according to the width (b) of the strip-shaped right-angle monocrystalline silicon piece and the third ratio;
determining the length (H) of the silicon single crystal rod according to the length (a) of the strip-shaped right-angle monocrystalline silicon piece, so that the length (H) of the silicon single crystal rod is greater than the length (a) of the strip-shaped right-angle monocrystalline silicon piece;
preparing a cylindrical silicon single crystal rod according to the determined diameter (phi) and length (H) of the silicon single crystal rod;
cutting off the head and the tail of the monocrystalline silicon rod, wherein the length (h) of the remaining section of the monocrystalline silicon rod is not less than the length (a) of the strip-shaped right-angle monocrystalline silicon piece; cutting the remaining section of the monocrystalline silicon rod according to the determined side length (L) of the monocrystalline silicon square piece to obtain a square rod for preparing the monocrystalline silicon square piece and four edge skin materials, wherein the four edge skin materials are cut along the length direction of the remaining section of the monocrystalline silicon rod and are equal to the remaining section of the monocrystalline silicon rod in length; each edge leather material comprises: a rectangular cutting surface formed by cutting and an arc surface opposite to the cutting surface; taking the cut surface as a datum plane; the joint part of the cutting surface and the cambered surface is taken as a sharp corner part;
slicing the square rod to obtain a monocrystalline silicon square piece;
cutting off each edge skin material according to the determined length (a) of the strip-shaped right-angle monocrystalline silicon piece, wherein each edge skin material is at least cut into an edge skin material section, and the length of the reference surface on each edge skin material section is consistent with the length (a) of the strip-shaped right-angle monocrystalline silicon piece; cutting off sharp corners on two sides of the small section of the edge skin material to obtain a silicon block for preparing the strip-shaped right-angle monocrystalline silicon piece, wherein the length and width of the reference surface on the silicon block are consistent with those of the strip-shaped right-angle monocrystalline silicon piece; and slicing the silicon block along the direction parallel to the reference surface on the silicon block to obtain the strip-shaped right-angle monocrystalline silicon piece.
Example 5
On the basis of example 3 or example 4, the difference lies in:
the first ratio and the difference between the first ratio and the second ratio are determined, and then the second ratio is determined according to the first ratio and the difference.
Example 6
On the basis of example 3 or example 4, the difference lies in:
the second ratio and the difference between the first ratio and the second ratio are determined, and then the first ratio is determined according to the second ratio and the difference.
In examples 1 to 6:
cutting off the head and the tail of the silicon single crystal rod, which specifically comprises the following steps: respectively cutting off the edges of two axial ends of the single crystal silicon rod by 5-100 mm along the axial direction;
the width (b) of the strip-shaped right-angle monocrystalline silicon piece can be 12.5-200 mm;
the thickness of the strip-shaped right-angle monocrystalline silicon piece can be 50-220 um.
Example 7
A solar cell module is prepared from the strip-shaped right-angle monocrystalline silicon wafer prepared in any one of embodiments 1 to 6.
Example 8
On the basis of example 7, the difference lies in:
the solar cell module adopts a tiling or splicing technology.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the technical principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (8)
1. The preparation method of the monocrystalline silicon piece is used for preparing a strip-shaped right-angle monocrystalline silicon piece and a monocrystalline silicon quasi square piece, or is used for preparing a strip-shaped right-angle monocrystalline silicon piece and a monocrystalline silicon square piece, and is characterized in that the dimension specification of the strip-shaped right-angle monocrystalline silicon piece is predetermined, the dimension specification of the monocrystalline silicon quasi square piece or the monocrystalline square piece is determined according to the dimension specification of the strip-shaped right-angle monocrystalline silicon piece, and the dimension specification of the monocrystalline silicon rod is determined; the method comprises the following steps:
taking the ratio (L: b) of the side length (L) of the quasi square sheet or square sheet of the monocrystalline silicon to the width (b) of the strip-shaped right-angle monocrystalline silicon wafer as a first ratio; taking the ratio (phi: b) of the diameter (phi) of the single crystal silicon rod to the width (b) of the strip-shaped right-angle single crystal silicon wafer as a second ratio; taking the ratio (a: b) of the length (a) of the strip-shaped right-angle monocrystalline silicon piece to the width (b) of the strip-shaped right-angle monocrystalline silicon piece as a third ratio;
determining the width (b) of the strip-shaped right-angle monocrystalline silicon piece, and a first ratio, a second ratio and a third ratio; the first ratio and the second ratio are both larger than 1, and the first ratio is smaller than the second ratio;
determining the side length (L) of a quasi square piece or a square piece of the monocrystalline silicon according to the width (b) of the strip-shaped right-angle monocrystalline silicon piece and the first ratio;
determining the diameter (phi) of the single crystal silicon rod according to the width (b) of the strip-shaped right-angle single crystal silicon wafer and the second ratio;
determining the length (a) of the strip-shaped right-angle monocrystalline silicon piece according to the width (b) of the strip-shaped right-angle monocrystalline silicon piece and the third ratio;
determining the length (H) of the silicon single crystal rod according to the length (a) of the strip-shaped right-angle monocrystalline silicon piece, so that the length (H) of the silicon single crystal rod is greater than the length (a) of the strip-shaped right-angle monocrystalline silicon piece;
preparing a cylindrical silicon single crystal rod according to the determined diameter (phi) and length (H) of the silicon single crystal rod;
cutting off the head and the tail of the monocrystalline silicon rod, wherein the length (h) of the remaining section of the monocrystalline silicon rod is not less than the length (a) of the strip-shaped right-angle monocrystalline silicon piece; cutting the residual section of the monocrystalline silicon rod according to the determined side length (L) of the quasi square piece or the square piece of the monocrystalline silicon to obtain a quasi square rod for preparing the quasi square piece of the monocrystalline silicon or a square rod for preparing the square piece of the monocrystalline silicon, and obtaining four edge cladding materials, wherein the four edge cladding materials are cut along the length direction of the residual section of the monocrystalline silicon rod, and the four edge cladding materials are as long as the residual section of the monocrystalline silicon rod; each edge leather material comprises: a rectangular cutting surface formed by cutting and an arc surface opposite to the cutting surface; taking the cut surface as a datum plane; the joint part of the cutting surface and the cambered surface is taken as a sharp corner part;
slicing the quasi-square rod to obtain a monocrystalline silicon quasi-square piece, or slicing the square rod to obtain a monocrystalline silicon square piece;
cutting off each edge skin material according to the determined length (a) of the strip-shaped right-angle monocrystalline silicon piece, wherein each edge skin material is at least cut into an edge skin material section, and the length of the reference surface on each edge skin material section is consistent with the length (a) of the strip-shaped right-angle monocrystalline silicon piece; cutting off sharp corners on two sides of the small section of the edge skin material to obtain a silicon block for preparing the strip-shaped right-angle monocrystalline silicon piece, wherein the length and width of the reference surface on the silicon block are consistent with those of the strip-shaped right-angle monocrystalline silicon piece; and slicing the silicon block along the direction parallel to the reference surface on the silicon block to obtain the strip-shaped right-angle monocrystalline silicon piece.
2. The method of producing a single crystal silicon wafer according to claim 1, wherein the first ratio and the difference between the first ratio and the second ratio are determined, and the second ratio is determined based on the first ratio and the difference.
3. The method of producing a single crystal silicon wafer according to claim 1, wherein the second ratio and the difference between the first ratio and the second ratio are determined, and the first ratio is determined based on the second ratio and the difference.
4. The method for preparing a monocrystalline silicon wafer according to claim 1, wherein the head and the tail of the monocrystalline silicon rod are cut off, specifically: and respectively cutting off the edges of the two axial ends of the single crystal silicon rod by 5-100 mm along the axial direction.
5. The method for producing a single-crystal silicon wafer according to claim 1, wherein the width (b) of the strip-shaped right-angle single-crystal silicon wafer is 12.5 to 200 mm.
6. The method for preparing a single-crystal silicon wafer according to claim 1, wherein the thickness of the strip-shaped right-angle single-crystal silicon wafer is 50 to 220 μm.
7. A solar cell module, characterized in that it uses a strip-like rectangular single crystal silicon wafer produced by the production method according to any one of claims 1 to 6.
8. The solar module according to claim 7, characterized in that it uses a tiling or tiling technique.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910159650.3A CN109747055B (en) | 2019-03-04 | 2019-03-04 | Preparation method and application of monocrystalline silicon wafer |
| SG11202108351YA SG11202108351YA (en) | 2019-03-04 | 2020-03-02 | Preparation method and application of monocrystalline silicon wafer |
| KR1020217024045A KR102583010B1 (en) | 2019-03-04 | 2020-03-02 | Manufacturing method and application of single crystal silicon wafer |
| CN202080010693.6A CN113382835B (en) | 2019-03-04 | 2020-03-02 | Preparation method and application of monocrystalline silicon wafer |
| MYPI2021004332A MY194767A (en) | 2019-03-04 | 2020-03-02 | Preparation method and application of monocrystalline silicon wafer |
| PCT/CN2020/077444 WO2020177667A1 (en) | 2019-03-04 | 2020-03-02 | Preparation method and application of monocrystalline silicon wafer |
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| CN109747055B (en) * | 2019-03-04 | 2020-12-04 | 常州时创能源股份有限公司 | Preparation method and application of monocrystalline silicon wafer |
| CN110060951B (en) * | 2019-05-21 | 2024-02-13 | 常州时创能源股份有限公司 | Graphite boat for silicon wafer coating |
| CN110416156B (en) * | 2019-07-31 | 2022-04-26 | 常州时创能源股份有限公司 | Preparation process of solar cell slices |
| CN110466083B (en) * | 2019-08-07 | 2021-11-12 | 常州时创能源股份有限公司 | Utilization method of silicon rod edge leather |
| CN110534617A (en) * | 2019-08-29 | 2019-12-03 | 常州时创能源科技有限公司 | The preparation method of small pieces battery |
| CN110712308A (en) * | 2019-10-23 | 2020-01-21 | 常州时创能源科技有限公司 | Cutting method of edge leather |
| CN110789010A (en) * | 2019-11-01 | 2020-02-14 | 常州时创能源科技有限公司 | Cutting process of crystal silicon edge leather |
| CN110625834A (en) * | 2019-11-01 | 2019-12-31 | 常州时创能源科技有限公司 | Method for cutting crystalline silicon edge leather |
| CN110789011A (en) * | 2019-11-07 | 2020-02-14 | 北京昌日新能源科技有限公司 | Novel photovoltaic right-angle monocrystalline silicon piece and manufacturing method thereof |
| CN111029440B (en) * | 2019-12-11 | 2022-01-28 | 晶科能源有限公司 | Single crystal battery and manufacturing method of single crystal silicon wafer |
| CN110978303A (en) * | 2019-12-20 | 2020-04-10 | 江苏高照新能源发展有限公司 | Cutting method for improving utilization rate of silicon single crystal rod |
| CN111361027B (en) * | 2020-04-30 | 2022-05-31 | 常州时创能源股份有限公司 | Silicon rod cutting process |
| CN114227957B (en) * | 2021-12-20 | 2024-03-26 | 常州时创能源股份有限公司 | Silicon rod cutting method |
| CN114347283A (en) * | 2022-01-19 | 2022-04-15 | 浙江昀丰新材料科技股份有限公司 | Processing technology of photovoltaic substrate wafer |
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| JP5108123B2 (en) * | 2011-01-27 | 2012-12-26 | 株式会社岡本工作機械製作所 | Cylindrical ingot block cutting apparatus and method of processing into a square pillar block using the same |
| WO2013095928A1 (en) * | 2011-12-23 | 2013-06-27 | Gtat Corporation | Method of producing bricks from a silicon ingot |
| CN102758243A (en) * | 2012-07-06 | 2012-10-31 | 无锡中硅科技有限公司 | Seed crystal of large-size single crystal and production process thereof |
| KR20150044932A (en) * | 2012-08-17 | 2015-04-27 | 지티에이티 코포레이션 | System and method of growing silicon ingots from seeds in a crucible and manfacture of seeds used therein |
| TWI539509B (en) * | 2013-07-05 | 2016-06-21 | 茂迪股份有限公司 | Method for cutting ingot, brick and wafer |
| CN103862584B (en) * | 2014-04-04 | 2015-09-30 | 常州时创能源科技有限公司 | The evolution technique of monocrystalline silicon round rod used for solar batteries and application |
| CN204367198U (en) * | 2014-12-24 | 2015-06-03 | 湖南宇晶机器股份有限公司 | Multi-thread broken side's cutting machine |
| CN108972919A (en) * | 2017-06-01 | 2018-12-11 | 江苏拓正茂源新能源有限公司 | The technique that silicon single crystal rod is processed into monocrystalline silicon buffing silicon wafer |
| CN108068221B (en) * | 2017-11-01 | 2019-03-05 | 宇泰（江西）新能源有限公司 | A kind of processing method with column crystal silicon rod processing rectangular photovoltaic cells silicon wafer |
| CN108437246A (en) * | 2018-04-03 | 2018-08-24 | 江阴市瑞尔嘉新能源科技有限公司 | A kind of method and apparatus of silicon core flaw-piece cutting finished silicon core |
| CN109747055B (en) * | 2019-03-04 | 2020-12-04 | 常州时创能源股份有限公司 | Preparation method and application of monocrystalline silicon wafer |
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| CN113382835A (en) | 2021-09-10 |
| CN109747055A (en) | 2019-05-14 |
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