CN109738989A - 2 × 2 integrated optical switch and manufacturing method led based on silicon planar lightwave - Google Patents
2 × 2 integrated optical switch and manufacturing method led based on silicon planar lightwave Download PDFInfo
- Publication number
- CN109738989A CN109738989A CN201910156903.1A CN201910156903A CN109738989A CN 109738989 A CN109738989 A CN 109738989A CN 201910156903 A CN201910156903 A CN 201910156903A CN 109738989 A CN109738989 A CN 109738989A
- Authority
- CN
- China
- Prior art keywords
- microns
- silica
- waveguide
- sandwich layer
- buffer layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 28
- 239000010703 silicon Substances 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 143
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 71
- 239000002184 metal Substances 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000000203 mixture Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 13
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 230000002708 enhancing effect Effects 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 2
- 230000010287 polarization Effects 0.000 abstract description 8
- 230000008033 biological extinction Effects 0.000 abstract description 6
- 230000001419 dependent effect Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 40
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000012792 core layer Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
The invention discloses a kind of 2 × 2 integrated optical switch led based on silicon planar lightwave, comprising: silicon-based substrate；The silica buffer layer being covered in the silicon-based substrate；Refractive index is higher than the silica buffer layer, and the silica sandwich layer being plated on the silica buffer layer；The silica top covering being covered on the silica sandwich layer.Wherein, the sandwich layer waveguide of the silica sandwich layer is the Mach-Zehnder interferometer of two multi-mode interferometers composition, is embedded under the Mach-Zehnder interfere arm of the Mach-Zehnder interferometer for being heated the metal electrode with phase modulation to waveguide.Optical signal can be realized in the switching of output waveguide port by adjusting the voltage being attached on metal electrode.Have many advantages, such as simple structure, at low cost, High Extinction Ratio, low Polarization Dependent Loss, there is important potential application at the optical path switching node in the following high speed dynamic optical net.
Description
Technical field
The present invention relates to waveguide integrated optical switch, in particular to 2 × 2 collection of the Planar Lightwave Circuit Technology based on silica
At photoswitch.
Background technique
In order to meet different types of data requirements, the communication data quantity in optical communication net is sharply increased, network technology
Application start to receive the limitation of the delay of the network equipment and power consumption.It is handled more under high-speed conversion to meet
The demand of information content, industry propose dynamic light path network plan.Dynamic light path network need to by the photoswitch of multiport number into
The quick optical path switching of row.Photoswitch is the core devices for realizing All-optical switching, can be to the light in optical transmission line or integrated optical circuit
Signal is mutually converted or logical operation is, it can be achieved that dynamic optical path management, the error protection of optical-fiber network, wavelength dynamically distribute
Etc. functions, have great importance to current Complex Flexible is improved, the research of photoswitch has become all optical communication area research
Focus.
In recent years, the reasonable multiport photoswitch of manufacturing cost is always a challenge.Light based on silicon-on-insulator is opened
Pass has the advantages that low-power consumption and compatible with complementary metal oxide semiconductor manufacturing process, and low cost may be implemented, high to collect
At the optical device of, small size, feasible solution is provided for following high speed optical networks.Due to Si (n=3.48) and
SiO2(n=1.4444) high index-contrast between keeps the structure of silicon optical device very compact as the strong constraint factor.But it is another
Aspect, this is but also silicon photonic device has polarization dependence, including polarization mode dispersion, Polarization Dependent Loss (PDL) and work
The polarization dependence of wavelength, this is one of the significant challenge in silicon photonics.
Currently, being widely studied based on silicon planar lightwave circuit engineering in various optical integrated devices, due to inserting
Entering loss and Polarization Dependent Loss is low, no-movable part, reproducibility and reliability is high, is easily attached optical fiber, and coupling efficiency is high, at
This is low, is suitble to large-scale production, therefore how to be applied to integrated optical switch, is the direction of those skilled in the art's research.
Summary of the invention
One of the objects of the present invention is to provide a kind of 2 × 2 integrated optical switch led based on silicon planar lightwave, tools
There are simple structure, at low cost, High Extinction Ratio, low Polarization Dependent Loss.
The second object of the present invention is to provide a kind of manufacturing method of accurate, effective above-mentioned 2 × 2 integrated optical switch.
Realizing the technical solution of above-mentioned purpose is:
A kind of 2 × 2 integrated optical switch led based on silicon planar lightwave of one of the present invention, comprising:
Silicon-based substrate；
The silica buffer layer being covered in the silicon-based substrate；
Refractive index is higher than the silica buffer layer, and the silica core being plated on the silica buffer layer
Layer；And
The silica top covering being covered on the silica sandwich layer；
Wherein, the sandwich layer waveguide of the silica sandwich layer is the Mach-Zehnder interferometer of two multi-mode interferometers composition,
It is embedded under the Mach-Zehnder interfere arm of the Mach-Zehnder interferometer for being heated the metal electricity with phase modulation to waveguide
Pole.
Preferably, the thickness of the silica buffer layer is greater than 10 microns or more, the thickness of the silica top covering
Degree is 10 microns, and refractive index is 1.4444；The silica sandwich layer with a thickness of 6 microns, refractive index 1.4567.
Preferably, the interference region length of the multi-mode interferometer is 9473 microns, and width is 120 microns, micro- with a thickness of 6
Rice；
The length of the Mach-Zehnder interfere arm is 500 microns.
Preferably, the input port waveguide Yu output port waveguide of the interference region of the multi-mode interferometer are identical cone
The combination of shape waveguide and the first straight wave guide.
Preferably, the length of tapered transmission line is 304.9 microns, and the width at connection multi-mode interferometer end is 12.4 microns, even
The width for connecing the first straight wave guide end is 6 microns；The width of first straight wave guide is 6 microns, and length is 100 microns, input terminal
Mouth waveguide and output port waveguide core are respectively 20.3 microns with interference region center offset；
The input terminal of input port waveguide and the output end of output port waveguide are S type curved waveguide and the second straight wave guide
Composition, wherein S type curved waveguide length is 300 microns, and radius is 406 microns, and the distance of laterally offset is 100 microns, the
Two straight wave guide length are 100 microns；The width of S type curved waveguide and the second straight wave guide is 6 microns, and equal 6 microns of thickness.
Preferably, the metal electrode is Ti/Pt (titanium/platinum) metal heater, and with a thickness of 100/10 nanometer, area is
300 × 8 square microns.
The manufacturing method of above-mentioned 2 × 2 integrated optical switch of the two of the present invention, comprising:
Step 1, it is slow that the silica is grown in silicon-based substrate by plasma enhanced chemical vapor deposition method
Rush the first part of layer；
Step 2, two metal electrodes are attached in the first part of the silica buffer layer, then passed through
Gas ions enhancing chemical vapor deposition method grows the second part of the silica buffer layer；
Step 3, the silica sandwich layer is grown by plasma enhanced chemical vapor deposition method, is splashed using magnetic control
It penetrates the cadmium plating on silica sandwich layer and forms sandwich layer waveguide junction using photoetching and ion beam etching as compound etching mask
Structure；
Step 4, the sandwich layer waveguide passes through plasma enhanced chemical after peroxidating plasma-based and wet chemical technology cleaning
Vapor deposition method grows the silica top covering；
Step 5, between the metal electrode and the silica cutting at metal electrode edge processing.
Preferably, in the step S1, the thickness of the first part of the silica buffer layer is greater than 10 microns, sinks
Temperature when product is 350 degrees Celsius；
In the step S2, the second part of the silica buffer layer with a thickness of 3 microns；
In the step S3, the silica sandwich layer have it is Ge-doped, and with a thickness of 6 microns；
In the step S4, the silica top covering with a thickness of 10 microns.
The beneficial effects of the present invention are: the present invention is adopted as the Mach-Zehnder interference of two identical multi-mode interferometer compositions
Instrument has there are two input port and two output ports, and any input port, can be two when input wavelength is 1550 nanometers
A output port realizes 50 to 50 power beam splitting.The adhesion metal electrode under Mach-Zehnder arm passes through adjusting based on thermo-optic effect
Additional voltage on the electrode carries out refractive index modulation to fuel factor range inner sandwich layer and modulates to reach to optical signal phase, most
Realize light in the switching of two output ports eventually.Simple with structure, at low cost, High Extinction Ratio, low Polarization Dependent Loss etc. are excellent
Point has important potential application at the optical path switching node in the following high speed dynamic optical net.
Detailed description of the invention
Fig. 1 is the schematic diagram of 2 × 2 integrated optical switch of the invention；
Fig. 2 is the sectional view in Mach-Zehnder interferometer interfere arm phase-modulation region in the present invention.
Fig. 3 is the field pattern for the beam Propagation that designed multi-mode interferometer is simulated based on beam propagation ratio；
Fig. 4 is the curve graph that two output ports of multi-mode interferometer export energy；
Fig. 5 is that designed 2 × 2 integrated optical switch based on silicon planar lightwave conductive path are based on beam propagation ratio mould
The field pattern of quasi- beam Propagation；
Fig. 6 is the curve that two output ports of optical signal export energy under the refractive index for modulating single Mach-Zehnder arm
Figure；
Fig. 7 is the manufacturing flow chart of 2 × 2 integrated optical switch of the invention.
Specific embodiment
The present invention will be further described with reference to the accompanying drawings.
Please refer to Fig. 1 and Fig. 2,2 × 2 integrated optical switch of the invention led based on silicon planar lightwave, comprising: silicon
Base substrate 1, silica buffer layer 2, silica sandwich layer 3 and silica top covering 4.
Silica buffer layer 2 is covered in silicon-based substrate 1, is divided into first part and second part.Silica sandwich layer 3
Refractive index be higher than silica buffer layer 2, and be plated on silica buffer layer 2.Silica top covering 4 is covered in dioxy
On SiClx sandwich layer 3.
The sandwich layer waveguide of silica sandwich layer 3 is the Mach-Zehnder interferometer of two multi-mode interferometers composition, the Mach-
The Mach-Zehnder interfere arm 5 of Zehnder interferometer is lower to be embedded to metal electrode 6, adds high frequency voltage to it, high for carrying out to waveguide
Effect heating is with phase modulation, to realize the switching of optical path.Metal electrode 6 plus high frequency voltage carry out phase controlling, frequency of use
In the square-wave voltage of MHz or more magnitude, instead of traditional phased method of direct current, to reduce switching power loss.Metal electrode 6 is Ti/
Pt metal heater, with a thickness of 100/10 (Ti is that 100/Pt is 10) nanometer, area is 300 × 8 square microns.Metal electrode 6
Between and 6 edge of metal electrode silica cutting processing, figure label 12 indicate cutting, reduce thermo-optic modulation when electrode heat
Measure the loss into air.
In the present embodiment, the thickness of silica buffer layer 2 is greater than 10 microns, is 12 microns in the present embodiment, titanium dioxide
Silicon top covering 4 with a thickness of 10 microns, refractive index is 1.4444；Silica sandwich layer 3 with a thickness of 6 microns, refractive index is
1.4567.The interference region length a of multi-mode interferometer is 9473 microns, and width b is 120 microns, with a thickness of 6 microns.Mach-was once
The length d of moral interfere arm 5 is 500 microns.
The input port waveguide of the interference region of multi-mode interferometer and output port waveguide are same conical waveguide 8 and the
The combination of one straight wave guide 9, can be reduced the coupling loss of input, output end and multiple-mode interfence region.The length of tapered transmission line 8 is
304.9 microns, the width at connection multi-mode interferometer end is 12.4 microns, and the width at connection 9 end of the first straight wave guide is 6 microns.The
The width of one straight wave guide 9 is 6 microns, and length is 100 microns, input port waveguide and output port waveguide core respectively with interference
Regional center offset c is 20.3 microns.
The input terminal of input port waveguide and the output end of output port waveguide are S type curved waveguide 10 and the second straight wave
Lead 12 composition, wherein 10 length of S type curved waveguide is 300 microns, and radius is 406 microns, and the distance of laterally offset is 100
Micron, 11 length of the second straight wave guide are 100 microns；The width of S type curved waveguide 10 and the second straight wave guide 11 is 6 microns, thick
Spend equal 6 microns.
Fig. 3 shows the field pattern for the beam Propagation that designed multi-mode interferometer is simulated based on beam propagation ratio.
Fig. 4 shows the curve graph of two output port output energy of multi-mode interferometer.Any input terminal of multi-mode interferometer
It is 9473 microns by length, width is 120 micron multi-mode interference regions, two in the case where input wavelength is 1550nm optical signal
A output port 50 to 50 exports.
Fig. 5 shows that optical signal is propagated along optical waveguide when optical signal waveguide port one inputs, when first multimode of arrival
Multiple-mode interfence occurs for interference region, and optical signal is divided equally in first multi-mode interferometer, i.e., from two output ports 50 to 50
Output.By adjusting the refractive index of a wherein arms in Mach-Zehnder interfere arm 5, even if optical signal generates phase change, so that
Optical signal is converted between two output ports of second multi-mode interferometer, to realize 2 × 2 light switch functions.Fig. 6 is shown
By adjusting in Mach-Zehnder interfere arm 5 the wherein refractive index of an arms, i.e., thermo-optic modulation optical signal of equal value is in the waveguide
Phase, the curve graph of two output port output energy of optical signal.By calculating the extinction ratio when optical signal is exported from intersection end
For 59.58dB, when optical signal is exported from straight-through end, extinction ratio is 41.83dB, and extinction ratio here is defined as 10 × log (Pa/
Pb), wherein Pa is the optical power of light signal output end, and Pb is the optical power of the non-output end of optical signal.
Shown in Fig. 7, the manufacturing method of two above-mentioned 2 × 2 integrated optical switch of the present invention, including the following steps:
Step 1, it under 350 degrees Celsius, is grown in silicon-based substrate 1 by plasma enhanced chemical vapor deposition method
The first part of silica buffer layer 2, in the present embodiment, the first part with a thickness of 9 microns.
Step 2, two metal electrodes 6 are attached in the first part of silica buffer layer 2, then pass through plasma
Enhance chemical vapor deposition method growth silica buffer layer 2 second part, the second part with a thickness of 3 microns.
Step 3, silica sandwich layer 3, silica sandwich layer 3 are grown by plasma enhanced chemical vapor deposition method
Have it is Ge-doped, with a thickness of 6 microns in the present embodiment.Using magnetron sputtering on silica sandwich layer 3 cadmium plating as compound etching
Mask forms sandwich layer waveguiding structure using photoetching and ion beam etching.Sandwich layer waveguide is through peroxidating plasma-based and wet chemical technology
Silica top covering 4, the thickness of silica top covering 4 are grown by plasma enhanced chemical vapor deposition method after cleaning
Degree is 10 microns.
Step 5, between metal electrode 6 and the silica cutting at 6 edge of metal electrode processing.
To sum up, 2 × 2 integrated optical switch of the invention include the Mach-Zehnder interferometer of two identical multi-mode interferometers
Structure, adhesion metal electrode 6 carries out refractive index modulation to fuel factor range inner sandwich layer to reach to light under Mach-Zehnder arm
Signal phase modulation can realize light in the conversion of two output ports by adjusting additional voltage on the electrode.
Design to multi-mode interferometer passes through the width in theoretical calculation multi-mode interferometer region, in conjunction with incident wavelength first
According to formulaWherein w is multiple-mode interfence peak width, and λ is incident wavelength, and ε is mode
Pole, for transverse electric mode ε=0, for TM mode ε=1, naFor the refractive index of clad, nbFor the refractive index of waveguide core layer.Secondly,
It, which is calculated, by the width in multiple-mode interfence area claps lengthWherein, nrFor the refractive index of clad, weFor multiple-mode interfence
Peak width claps long LaRelationship with multiple-mode interfence section length L is L=kLa, wherein K is integer, is limited in resonance mechanism, such as
Fruit k is odd number or even number respectively, then being formed from imaging point is in the same direction or mirror image.It is hereby achieved that required multiple-mode interfence
The preliminary theoretical parameter of instrument.
Final multi-mode interferometer design parameter are as follows: waveguide core layer with a thickness of 6 microns, multiple-mode interfence zone length is 9473
Micron, width are 120 microns.The length of tapered transmission line 8 is 304.9 microns, and the width at connection multi-mode interferometer end is 12.4 micro-
Rice, the width at connection 9 end of the first straight wave guide are 6 microns.The width of first straight wave guide 9 is 6 microns, and length is 100 microns, input
Port waveguide and output port waveguide core and multiple-mode interfence regional center offset are 20.3 microns.
Above embodiments are used for illustrative purposes only, rather than limitation of the present invention, the technology people in relation to technical field
Member, without departing from the spirit and scope of the present invention, can also make various transformation or modification, therefore all equivalent
Technical solution also should belong to scope of the invention, should be limited by each claim.
Claims (8)
1. a kind of 2 × 2 integrated optical switch led based on silicon planar lightwave characterized by comprising
Silicon-based substrate；
The silica buffer layer being covered in the silicon-based substrate；
Refractive index is higher than the silica buffer layer, and the silica sandwich layer being plated on the silica buffer layer；With
And
The silica top covering being covered on the silica sandwich layer；
Wherein, the sandwich layer waveguide of the silica sandwich layer is the Mach-Zehnder interferometer of two multi-mode interferometers composition, the horse
It is embedded under the Mach-Zehnder interfere arm of conspicuous-Zehnder interferometer for being heated the metal electrode with phase modulation to waveguide.
2. 2 × 2 integrated optical switch according to claim 1 led based on silicon planar lightwave, which is characterized in that institute
The thickness for stating silica buffer layer is greater than 10 microns or more, the silica top covering with a thickness of 10 microns, refractive index
It is 1.4444；The silica sandwich layer with a thickness of 6 microns, refractive index 1.4567.
3. 2 × 2 integrated optical switch according to claim 1 led based on silicon planar lightwave, which is characterized in that institute
The interference region length for stating multi-mode interferometer is 9473 microns, and width is 120 microns, with a thickness of 6 microns；
The length of the Mach-Zehnder interfere arm is 500 microns.
4. 2 × 2 integrated optical switch according to claim 1 led based on silicon planar lightwave, which is characterized in that institute
It states the input port waveguide of the interference region of multi-mode interferometer and output port waveguide is same conical waveguide and the first straight wave
The combination led.
5. 2 × 2 integrated optical switch according to claim 4 led based on silicon planar lightwave, which is characterized in that cone
The length of shape waveguide is 304.9 microns, and the width at connection multi-mode interferometer end is 12.4 microns, connects the width at the first straight wave guide end
Degree is 6 microns；The width of first straight wave guide is 6 microns, and length is 100 microns, input port waveguide and output port wave
Guiding center is respectively 20.3 microns with interference region center offset；
The input terminal of input port waveguide and the output end of output port waveguide are the group of S type curved waveguide and the second straight wave guide
At, wherein S type curved waveguide length is 300 microns, and radius is 406 microns, and the distance of laterally offset is 100 microns, and second is straight
Waveguide length is 100 microns；The width of S type curved waveguide and the second straight wave guide is 6 microns, and equal 6 microns of thickness.
6. 2 × 2 integrated optical switch according to claim 4 led based on silicon planar lightwave, which is characterized in that institute
Stating metal electrode is Ti/Pt metal heater, and with a thickness of 100/10 nanometer, area is 300 × 8 square microns.
7. a kind of manufacturing method of 2 × 2 integrated optical switch as described in claim 1 characterized by comprising
Step 1, the silica buffer layer is grown in silicon-based substrate by plasma enhanced chemical vapor deposition method
First part；
Step 2, two metal electrodes are attached in the first part of the silica buffer layer, then pass through plasma
Body enhancing chemical vapor deposition method grows the second part of the silica buffer layer；
Step 3, the silica sandwich layer is grown by plasma enhanced chemical vapor deposition method, is existed using magnetron sputtering
Cadmium plating forms sandwich layer waveguiding structure using photoetching and ion beam etching as compound etching mask on silica sandwich layer；
Step 4, the sandwich layer waveguide passes through plasma enhanced chemical vapor after peroxidating plasma-based and wet chemical technology cleaning
Deposition method grows the silica top covering；
Step 5, between the metal electrode and the silica cutting at metal electrode edge processing.
8. the manufacturing method of 2 × 2 integrated optical switch according to claim 7, which is characterized in that in the step S1, institute
The thickness for stating the first part of silica buffer layer is greater than 10 microns, and temperature when depositing is 350 degrees Celsius；
In the step S2, the second part of the silica buffer layer with a thickness of 3 microns；
In the step S3, the silica sandwich layer have it is Ge-doped, and with a thickness of 6 microns；
In the step S4, the silica top covering with a thickness of 10 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910156903.1A CN109738989A (en) | 2019-03-01 | 2019-03-01 | 2 × 2 integrated optical switch and manufacturing method led based on silicon planar lightwave |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910156903.1A CN109738989A (en) | 2019-03-01 | 2019-03-01 | 2 × 2 integrated optical switch and manufacturing method led based on silicon planar lightwave |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109738989A true CN109738989A (en) | 2019-05-10 |
Family
ID=66369026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910156903.1A Pending CN109738989A (en) | 2019-03-01 | 2019-03-01 | 2 × 2 integrated optical switch and manufacturing method led based on silicon planar lightwave |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109738989A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110646883A (en) * | 2019-09-30 | 2020-01-03 | 华东师范大学重庆研究院 | Three-way silicon-based beam splitter chip and manufacturing method thereof |
| CN110779440A (en) * | 2019-10-12 | 2020-02-11 | 浙江大学 | Polarization insensitive photosensitive switch based on Mach Zehnder interferometer structure |
| CN111427122A (en) * | 2020-05-14 | 2020-07-17 | 上海交通大学 | N × N silicon-based polarization independent optical switch system |
| CN111752016A (en) * | 2020-08-14 | 2020-10-09 | 东南大学 | Broadband integrated three-way wavelength division multiplexer |
| TWI718052B (en) * | 2019-10-30 | 2021-02-01 | 台灣積體電路製造股份有限公司 | Modulator device and forming method thereof |
| JP2021063951A (en) * | 2019-10-16 | 2021-04-22 | 住友電気工業株式会社 | Optical modulator |
| CN113238397A (en) * | 2021-05-17 | 2021-08-10 | 桂林电子科技大学 | Optical switch for network-on-chip interconnection |
| CN113300965A (en) * | 2021-05-17 | 2021-08-24 | 桂林航天工业学院 | Cellular router for network-on-chip interconnection |
| CN113484951A (en) * | 2021-07-05 | 2021-10-08 | 吉林大学 | Reconfigurable mode insensitive channel switch for mode division multiplexing system |
| CN115291334A (en) * | 2022-08-01 | 2022-11-04 | 吉林大学 | TE modulated by silicon-based PIN 0 /TE 1 Multimode electro-optical switch |
| CN115755442A (en) * | 2022-12-05 | 2023-03-07 | 之江实验室 | O-waveband multi-mode interference type silicon-based optical switch based on antimony sulfide on waveguide |
| CN115755273A (en) * | 2022-10-31 | 2023-03-07 | 北京自动化控制设备研究所 | Silicon-based optical branching integrated chip, integrated optical fiber gyroscope, preparation method and connection method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6614947B1 (en) * | 1999-11-23 | 2003-09-02 | Lnl Technologies, Inc. | Digital optical switch using an integrated mach-zehnder interferometer having a movable phase shifter |
| CN1670550A (en) * | 2004-03-19 | 2005-09-21 | 中国科学院半导体研究所 | Method for realizing silicon based silicon dioxde waveguide polarization irrelevancy by employing non-planar process |
| CN103268001A (en) * | 2013-05-31 | 2013-08-28 | 东南大学 | Asymmetrical phase-adjustable Mach-Zehnder interferometer and preparation method thereof |
| CN108227084A (en) * | 2018-01-16 | 2018-06-29 | 上海理工大学 | Unrelated integrated optical switch of a kind of polarization based on silicon nitride waveguides and preparation method thereof |
| US20180373114A1 (en) * | 2017-06-27 | 2018-12-27 | Sumitomo Electric Industries, Ltd. | Multimode interferometer, mach-zehnder modulation device |
| CN209606662U (en) * | 2019-03-01 | 2019-11-08 | 苏州科沃微电子有限公司 | 2 × 2 integrated optical switch led based on silicon planar lightwave |
-
2019
- 2019-03-01 CN CN201910156903.1A patent/CN109738989A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6614947B1 (en) * | 1999-11-23 | 2003-09-02 | Lnl Technologies, Inc. | Digital optical switch using an integrated mach-zehnder interferometer having a movable phase shifter |
| CN1670550A (en) * | 2004-03-19 | 2005-09-21 | 中国科学院半导体研究所 | Method for realizing silicon based silicon dioxde waveguide polarization irrelevancy by employing non-planar process |
| CN103268001A (en) * | 2013-05-31 | 2013-08-28 | 东南大学 | Asymmetrical phase-adjustable Mach-Zehnder interferometer and preparation method thereof |
| US20180373114A1 (en) * | 2017-06-27 | 2018-12-27 | Sumitomo Electric Industries, Ltd. | Multimode interferometer, mach-zehnder modulation device |
| CN108227084A (en) * | 2018-01-16 | 2018-06-29 | 上海理工大学 | Unrelated integrated optical switch of a kind of polarization based on silicon nitride waveguides and preparation method thereof |
| CN209606662U (en) * | 2019-03-01 | 2019-11-08 | 苏州科沃微电子有限公司 | 2 × 2 integrated optical switch led based on silicon planar lightwave |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110646883A (en) * | 2019-09-30 | 2020-01-03 | 华东师范大学重庆研究院 | Three-way silicon-based beam splitter chip and manufacturing method thereof |
| CN110779440A (en) * | 2019-10-12 | 2020-02-11 | 浙江大学 | Polarization insensitive photosensitive switch based on Mach Zehnder interferometer structure |
| JP2021063951A (en) * | 2019-10-16 | 2021-04-22 | 住友電気工業株式会社 | Optical modulator |
| TWI718052B (en) * | 2019-10-30 | 2021-02-01 | 台灣積體電路製造股份有限公司 | Modulator device and forming method thereof |
| CN111427122A (en) * | 2020-05-14 | 2020-07-17 | 上海交通大学 | N × N silicon-based polarization independent optical switch system |
| CN111427122B (en) * | 2020-05-14 | 2021-05-04 | 上海交通大学 | NxN silicon-based polarization independent optical switch system |
| CN111752016A (en) * | 2020-08-14 | 2020-10-09 | 东南大学 | Broadband integrated three-way wavelength division multiplexer |
| CN111752016B (en) * | 2020-08-14 | 2022-04-22 | 东南大学 | Broadband integrated three-way wavelength division multiplexer |
| CN113300965A (en) * | 2021-05-17 | 2021-08-24 | 桂林航天工业学院 | Cellular router for network-on-chip interconnection |
| CN113238397A (en) * | 2021-05-17 | 2021-08-10 | 桂林电子科技大学 | Optical switch for network-on-chip interconnection |
| CN113484951A (en) * | 2021-07-05 | 2021-10-08 | 吉林大学 | Reconfigurable mode insensitive channel switch for mode division multiplexing system |
| CN115291334A (en) * | 2022-08-01 | 2022-11-04 | 吉林大学 | TE modulated by silicon-based PIN 0 /TE 1 Multimode electro-optical switch |
| CN115291334B (en) * | 2022-08-01 | 2024-04-19 | 吉林大学 | TE modulated by silicon-based PIN0/TE1Multimode electro-optical switch |
| CN115755273A (en) * | 2022-10-31 | 2023-03-07 | 北京自动化控制设备研究所 | Silicon-based optical branching integrated chip, integrated optical fiber gyroscope, preparation method and connection method |
| CN115755273B (en) * | 2022-10-31 | 2024-05-03 | 北京自动化控制设备研究所 | Silicon-based optical branching integrated chip, integrated fiber optic gyroscope, preparation and connection methods |
| CN115755442A (en) * | 2022-12-05 | 2023-03-07 | 之江实验室 | O-waveband multi-mode interference type silicon-based optical switch based on antimony sulfide on waveguide |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109738989A (en) | 2 × 2 integrated optical switch and manufacturing method led based on silicon planar lightwave | |
| CN209606662U (en) | 2 × 2 integrated optical switch led based on silicon planar lightwave | |
| JP6198091B2 (en) | Waveguide polarization splitter and polarization rotator | |
| US6687446B2 (en) | Optical waveguide device and manufacturing method therefor | |
| Enami et al. | Electro-optic polymer/TiO2 multilayer slot waveguide modulators | |
| CN104849878A (en) | Silicon nitride waveguide calorescence switch array chip based on Mach-Zahnder structure and production method thereof | |
| Hoffmann et al. | Low-loss fiber-matched low-temperature PECVD waveguides with small-core dimensions for optical communication systems | |
| He et al. | Low loss, large bandwidth fiber-chip edge couplers based on silicon-on-insulator platform | |
| CN105388637B (en) | A kind of thermo-optical switch of SOI base MZI types 1 × 2 based on dielectric deposition type surface plasma waveguide | |
| US9764352B2 (en) | Stress-tuned planar lightwave circuit and method therefor | |
| US8078021B2 (en) | Waveguide connecting structure | |
| WO2012060567A2 (en) | Total reflection type optical switch using polymer insertion type silica optical waveguide and manufacturing method thereof | |
| US20130322815A1 (en) | Waveguide type optical switch | |
| CN109581586B (en) | Compact structure type silicon nitride wavelength division multiplexing photon chip | |
| CN109613632A (en) | Tunable cavity and preparation method thereof based on flexible surface phasmon coupler | |
| Tsuchizawa et al. | Low-loss Si wire waveguides and their application to thermooptic switches | |
| CN109709644B (en) | Runway type micro-ring 2 x 4 thermo-optic switch prepared based on SOI material | |
| Han et al. | N× N polymer matrix switches using thermo-optic total-internal-reflection switch | |
| CN110456528A (en) | A kind of plasma electric optical modulator of twin-guide manifold type | |
| Zhixun et al. | Hybrid photonic-plasmonic electro-optic modulator for optical ring network-on-chip | |
| CN113985522B (en) | Micro-ring optical switch based on silicon-silicon nitride three-dimensional integration | |
| Rahman et al. | Design optimization of polymer electrooptic modulators | |
| CN107111169B (en) | Stress tuning planar lighting circuit and method thereof | |
| CN113900280A (en) | Polarization independent optical switch | |
| CN110426865B (en) | Thermo-optical switch utilizing guided mode reflection displacement effect and multimode interference effect in silicon waveguide corner mirror |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |