CN109639930A - A kind of semiconductor crystal wafer diced system based on computer vision and its cutting method - Google Patents
A kind of semiconductor crystal wafer diced system based on computer vision and its cutting method Download PDFInfo
- Publication number
- CN109639930A CN109639930A CN201811460425.5A CN201811460425A CN109639930A CN 109639930 A CN109639930 A CN 109639930A CN 201811460425 A CN201811460425 A CN 201811460425A CN 109639930 A CN109639930 A CN 109639930A
- Authority
- CN
- China
- Prior art keywords
- semiconductor crystal
- crystal wafer
- image
- chip
- camera
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/80—Camera processing pipelines; Components thereof
- H04N23/81—Camera processing pipelines; Components thereof for suppressing or minimising disturbance in the image signal generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67294—Apparatus for monitoring, sorting or marking using identification means, e.g. labels on substrates or labels on containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N17/00—Diagnosis, testing or measuring for television systems or their details
- H04N17/002—Diagnosis, testing or measuring for television systems or their details for television cameras
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/90—Arrangement of cameras or camera modules, e.g. multiple cameras in TV studios or sports stadiums
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Biomedical Technology (AREA)
- General Health & Medical Sciences (AREA)
- Health & Medical Sciences (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
The present invention provides a kind of semiconductor crystal wafer diced system based on computer vision and its cutting method, the semiconductor crystal wafer diced system includes lower carrying platform, upper carrying platform, camera module, adjusts mould group and computer mould group;The upper carrying platform, including with the bearing area of x-ray perpendicular to one another and four same shapes of Y line segmentation;The camera module includes the first camera unit and the second camera unit;The adjusting mould group includes that X-axis adjusts unit and Y-axis adjusting unit.
Description
Technical field
The present invention relates to a kind of cutting technique based on computer vision, in particular to a kind of based on computer vision half
Semiconductor wafer diced system and its cutting method.
Background technique
After the completion of wafer manufacturing, wafer is cut, to obtain several independent chips.It is just sealed later
It fills or is assembled.Since the gap between each chip is very small, usually all in microns.So being needed in cutting process
It is accurately positioned.
Currently, generalling use advanced computer vision technique during cutting to wafer to obtain chip
Dimension information.By taking conventional rectangular dies as an example, before determining cutting line, needing to obtain using video camera includes that chip exists
Interior orthograph picture.The width information and elevation information of chip are obtained by algorithm later.
But because camera lens there are radial distortion, are difficult to determine direction and the crystalline substance that video camera obtains image
Circle is vertical.Currently, having during being cut to wafer and demarcate to video camera and included to the video camera
Image including chip is corrected.But it needs to handle mass data in this way, and the determination of cutting line will basis
Image after correction, wherein just generating the error added up after data processing.
Summary of the invention
The technical problem to be solved by the present invention is to, provide a kind of semiconductor crystal wafer diced system based on computer vision and
Its cutting method determines that camera module obtains the direction of image and partly leads during cutting to semiconductor crystal wafer
Body wafer is vertical.
A technical solution of the invention is a kind of semiconductor crystal wafer diced system based on computer vision, including under hold
Carrying platform, camera module, adjusts mould group and computer mould group at upper carrying platform.Lower carrying platform is for carrying by several chips
The semiconductor crystal wafer of composition.Upper carrying platform includes the supporting region for four same shapes divided with x-ray perpendicular to one another and Y line
Domain, wherein the line intersection point of the x-ray and the Y line is located at the surface of the semiconductor crystal wafer.Camera module is taken the photograph including first
As unit and the second camera unit.First camera unit is for shooting the semiconductor crystal wafer and obtaining comprising the core
The first image including piece.Second camera unit exists for shooting the semiconductor crystal wafer and obtaining comprising the chip
The second interior image.First camera unit and second camera unit are installed in the upper carrying platform, and institute
The line midpoint and the line intersection point for stating the first camera unit and second camera unit are overlapped.Adjusting mould group includes X-axis tune
It saves unit and Y-axis adjusts unit.The X-axis adjusts unit and is operatively connected the upper carrying platform, and described for driving
Upper carrying platform is stirred around the x-ray to meet X-axis bit shift compensation.The Y-axis adjusts unit and is operatively connected the upper carrying
Platform, and for driving the upper carrying platform to stir around the Y line to meet Y-axis bit shift compensation.Computer mould group is used for root
The compensation rate of the X-axis bit shift compensation and the Y-axis bit shift compensation is obtained according to the first image and second image.
As an embodiment, first camera unit and second camera unit along the x-ray or
The Y line is mounted on the upper carrying platform.
As an embodiment, first camera unit and second camera unit are separately mounted to described
In centrosymmetric two bearing areas of line intersection point.
As an embodiment, the semiconductor crystal wafer has First look feature and the second visual signature.Work as institute
When stating the length direction of the chip of semiconductor crystal wafer along the x-ray direction, the computer mould group is used for according to comparison institute
The First look feature in the First look feature and second image in the first image is stated, the X-axis is obtained
The compensation rate of bit shift compensation.Also, the computer mould group is used for special according to second vision in comparison the first image
Second visual signature sought peace in second image, obtains the compensation rate of the Y-axis bit shift compensation.Wherein, described
One visual signature is the width of the chip of the semiconductor crystal wafer, and second visual signature is the semiconductor crystal wafer
The length of the chip.
As an embodiment, the semiconductor crystal wafer has First look feature and the second visual signature.Work as institute
When stating the length direction of the chip of semiconductor crystal wafer along the Y line direction, the computer mould group is used for according to comparison institute
The First look feature in the First look feature and second image in the first image is stated, the Y-axis is obtained
The compensation rate of bit shift compensation.Also, the computer mould group is used for special according to second vision in comparison the first image
Second visual signature sought peace in second image, obtains the compensation rate of the X-axis bit shift compensation.Wherein, described
One visual signature is the width of the chip of the semiconductor crystal wafer, and second visual signature is the semiconductor crystal wafer
The length of the chip.
As an embodiment, X-axis bit shift compensation and Y-axis are carried out to the upper carrying platform in the adjusting mould group
After bit shift compensation, the camera module shoots the semiconductor crystal wafer and obtains comprising the third figure including the chip
Picture.The computer mould group obtains the developed width value and actual height value of the chip according to the third image.
As an embodiment, the developed width value and actual height value of the chip are obtained in the computer mould group
Later, the computer mould group is according to the developed width value and the actual height value, and production matching is by several chipsets
At the semiconductor crystal wafer template image.If several profiles of the template image are covered the third image again
It does on the chip, to generate several shapes.The most matched shape of reselection generates cutting line.
Another technical solution of the invention is a kind of semiconductor crystal wafer cutting method based on computer vision, for half
Semiconductor wafer diced system is to cut the semiconductor crystal wafer being made of several chips.Under the semiconductor crystal wafer diced system includes
Carrying platform, camera module, adjusts mould group and computer mould group at upper carrying platform.The upper carrying platform includes to hang down each other
The bearing area of straight x-ray and four same shapes of Y line segmentation.The camera module includes that the first camera unit and second is taken the photograph
As unit.The adjusting mould group includes that X-axis adjusts unit and Y-axis adjusting unit.The semiconductor crystal wafer cutting method includes the
One step, second step and third step.In the first step, to be located at the x-ray of surface of the semiconductor crystal wafer and described
The line intersection point of Y line is midpoint, respectively including two camera points shoot the semiconductor crystal wafer and obtain comprising the chip
The first image and the second image.In second step, X-axis bit shift compensation is obtained according to the first image and second image
With the compensation rate of Y-axis bit shift compensation.In the third step, two are adjusted around the x-ray according to the compensation rate of the X-axis bit shift compensation
The position of the camera point, and two camera points are adjusted around the Y line according to the compensation rate of the Y-axis bit shift compensation
Position.
As an embodiment, the position of two camera points is adjusted around the x-ray and adjust two around the Y line
The position of a camera point carries out simultaneously.
The beneficial effect of the present invention compared with the prior art is to be carried out according to the first image and the second image to camera module
X-axis bit shift compensation and Y-axis bit shift compensation, until the direction and semiconductor crystal wafer that determine camera module acquisition image are vertical.Wherein
The single camera lens for overcoming camera module can not overcome the influence of radial distortion, via two camera lenses of camera module by respective diameter
It is offset to the influence of distortion.
Detailed description of the invention
Fig. 1 is the side view for the semiconductor crystal wafer diced system based on computer vision that one embodiment of the invention provides;
Fig. 2 is the functional block diagram for the semiconductor crystal wafer diced system based on computer vision that one embodiment of the invention provides;
Fig. 3 is the scheme of installation for the camera module that one embodiment of the invention provides;
Fig. 4 be another embodiment of the present invention provides camera module scheme of installation;
Fig. 5 is that the chip image frame in the first image and the second image that one embodiment of the invention provides selects schematic diagram;
Fig. 6 be another embodiment of the present invention provides the first image and the second image in chip image frame select schematic diagram;
Fig. 7 is the flow chart for the semiconductor crystal wafer cutting method based on computer vision that one embodiment of the invention provides.
In figure: 100, lower carrying platform;101, semiconductor crystal wafer;200, upper carrying platform;300, camera module;310,
One camera unit;320, the second camera unit;400, mould group is adjusted;410, X-axis adjusts unit;420, Y-axis adjusts unit;500,
Computer mould group.
Specific embodiment
Below in conjunction with attached drawing, the embodiment and advantage above-mentioned and other to the present invention are clearly and completely described.
Obviously, described embodiment is only some embodiments of the invention, rather than whole embodiments.
As depicted in figs. 1 and 2.Fig. 1 shows the side view of semiconductor crystal wafer diced system based on computer vision, figure
2 show the functional block diagram of semiconductor crystal wafer diced system based on computer vision.
In one embodiment, semiconductor crystal wafer diced system based on computer vision include lower carrying platform, on
Carrying platform, adjusts mould group and computer mould group at camera module.As shown in Figure 1, upper carrying platform is located at lower carrying platform
Top, the two are opposite up and down.In this kind of embodiment, lower carrying platform is for carrying the semiconductor die being made of several chips
Circle.Upper carrying platform is installed and for providing camera module for providing adjusting module operation connection.
As shown in figure 3, upper carrying platform is divided into the bearing area I of same shape by x-ray perpendicular to one another and Y line, holds
Carry region II, bearing area III and bearing area IV.In figure, the line intersection point of x-ray and Y line is indicated with point O.Implement in this kind
In mode, line intersection point is located at the surface of semiconductor crystal wafer.In conjunction with Fig. 1, camera module includes that the first camera unit and second is taken the photograph
As unit.First camera unit and the second camera unit are installed in carrying platform, and both towards lower carrying platform.
In this kind of embodiment, the first camera unit is used to shoot semiconductor crystal wafer and obtains comprising the first figure including chip
Picture.Second camera unit is used to shoot semiconductor crystal wafer and obtains comprising the second image including chip.
It should be noted that as shown in figure 3, Points And lines intersection point weight in the line of the first camera unit and the second camera unit
It closes.The line of the first camera unit and the second camera unit is indicated in figure with dotted line a.Actually it is, the first camera unit
Camera point and the second camera unit camera point along line intersection point central symmetry.So no matter when upper carrying platform is along X
Line direction generates inclination, or when generating inclination along Y line direction, in the first image obtained via the first camera unit
Chip image in chip image and the second image obtained via the second camera unit creates a difference with actual chip.
For convenience of description, the above carrying platform is only generating inclination, and the first camera unit and second along x-ray direction
For camera unit is mounted on upper carrying platform along x-ray, as shown in Figure 4.Assuming that the length direction of chip is along the line side Y
To.When upper carrying platform is when generating inclination along x-ray direction, via the chip in the first image of the first camera unit acquisition
Image is as shown in the chip image frame b in Fig. 5, via chip image such as Fig. 5 in the second image of the second camera unit acquisition
In chip image frame c shown in.Chip image frame b and chip image frame c in Fig. 5 have intercepted the first camera unit and respectively
The face part of the face part of one image and the second camera unit and the second image.In fact, due to the first camera unit
The camera point of camera point and the second camera unit is different, via the first image of the first camera unit acquisition and via the second camera shooting
The second image that unit obtains creates a difference.This difference is that the single camera lens of camera module can not embody.As shown in figure 5, working as
For upper carrying platform when generating inclination along x-ray direction, the chip image in the first image and the second image is and actual core
Piece creates a difference.Difference is embodied in, and the width w1 and width w2 of same chip generate difference.
Similarly, when upper carrying platform is only generating inclination, and the first camera unit and the second camera shooting list along Y line direction
When member is mounted on upper carrying platform along Y line.It is still assumed that the length direction of chip is along Y line direction.It is single via the first camera shooting
The chip image in the first image that member obtains as shown in the chip image frame d in Fig. 6, obtained via the second camera unit the
Chip image in two images is as shown in the chip image frame e in Fig. 6.Chip image in first image and the second image and
Actual chip creates a difference.Difference is embodied in, and the length l1 and width l2 of same chip generate difference.
But if the first camera unit and the second camera unit are separately mounted to hold with centrosymmetric two, line intersection point
It carries in region.As shown in figure 3, the first camera unit is mounted on bearing area III, the second camera unit is mounted on bearing area II.
So, no matter upper carrying platform is generating inclination along x-ray direction, or inclination is being generated along Y line direction.It is taken the photograph via first
As unit obtain the first image in chip image and via the second camera unit obtain the second image in chip image
Create a difference with actual chip.Also, via the first camera unit obtain the first image in chip image and via
The chip image in the second image that second camera unit obtains also creates a difference.When the length direction of chip is along x-ray direction
When, it can be using the width of chip as the First look feature of semiconductor crystal wafer, using the length of chip as semiconductor crystal wafer
Second visual signature.It, still can be using the width of chip as semiconductor crystal wafer when the length direction of chip is along the line direction Y
First look feature, using the length of chip as the second visual signature of semiconductor crystal wafer.
In this kind of embodiment, obtained via the first image of the first camera unit acquisition and via the second camera unit
The second image via computer mould group dissection process, to obtain the compensation rate of X-axis bit shift compensation and Y-axis bit shift compensation.It passes through again
By computer mould group according to dissection process as a result, generating the control instruction for adjusting unit and Y-axis adjusting unit to X-axis.Work as chip
Length direction along x-ray direction when, computer mould group be used for according to comparison the first image in First look feature and the second figure
First look feature as in obtains the compensation rate of X-axis bit shift compensation.Also, computer mould group is used for according to comparing the first image
In the second visual signature and the second image in the second visual signature, obtain Y-axis bit shift compensation compensation rate.When the length of chip
When spending direction along the line direction Y, computer mould group is used for according in the First look feature and the second image in the first image of comparison
First look feature, obtain Y-axis bit shift compensation compensation rate.Also, computer mould group is used for according in the first image of comparison
The second visual signature in second visual signature and the second image obtains the compensation rate of X-axis bit shift compensation.As shown in Figure 1, X-axis
It adjusts unit and is operatively connected carrying platform, for driving upper carrying platform to stir around x-ray under the control of computer mould group, with
Meet X-axis bit shift compensation.Y-axis adjusts unit and is operatively connected carrying platform, for driving under the control of computer mould group
Carrying platform is stirred around Y line to meet Y-axis bit shift compensation.In this kind of embodiment, upper carrying platform carries out X-axis bit shift compensation
After Y-axis bit shift compensation, the first image obtained via the first camera unit and the second figure obtained via the second camera unit
As identical.Therefore the single camera lens for overcoming camera module can not overcome the influence of radial distortion, via two of camera module
Camera lens offsets the influence of respective radial distortion.Because if the single camera lens of camera module be located at semiconductor crystal wafer just on
Side, because there are radial distortions for camera lens, so even if direction and semiconductor crystal wafer out of plumb in camera module acquisition image
In the case of, it is also difficult to it is embodied from the image obtained via camera module.
In one embodiment, semiconductor crystal wafer diced system based on computer vision is adjusting mould group to upper carrying
After platform carries out X-axis bit shift compensation and Y-axis bit shift compensation, camera module shoots semiconductor crystal wafer and obtains to exist comprising chip
Interior third image.Computer mould group obtains the developed width value and actual height value of chip according to third image.In this embodiment party
In formula, the developed width value and actual height value of chip be determining each chip position and gap data according to.
In one embodiment, semiconductor crystal wafer diced system based on computer vision obtains chip in computer mould group
Developed width value and actual height value after, computer mould group according to developed width value and actual height value, if production matching by
The template image of the semiconductor crystal wafer of dry chip composition.Several profiles of template image are covered to several cores of third image again
On piece, to generate several shapes.The most matched shape of reselection generates cutting line.In the present embodiment, it cuts
Line is the basis that semiconductor crystal wafer diced system based on computer vision is cut.
In addition, in one embodiment, semiconductor crystal wafer cutting method based on computer vision is used for semiconductor die
Circle diced system is to cut the semiconductor crystal wafer being made of several chips.
As depicted in figs. 1 and 2, semiconductor crystal wafer diced system include lower carrying platform, upper carrying platform, camera module,
Adjust mould group and computer mould group.Upper carrying platform includes four same shapes divided with x-ray perpendicular to one another and Y line
Bearing area.Camera module includes the first camera unit and the second camera unit.Adjusting mould group includes that X-axis adjusts unit and Y-axis
Adjust unit.
As shown in fig. 7, semiconductor crystal wafer cutting method includes the steps that sequentially executing S100, step S200, Yi Jibu
Rapid S300.In the step s 100, to be located at the x-ray of the surface of semiconductor crystal wafer and the line intersection point of Y line as midpoint, respectively two
A camera point shoots semiconductor crystal wafer and obtains comprising the first image and the second image including chip.In step s 200,
The compensation rate of X-axis bit shift compensation and Y-axis bit shift compensation is obtained according to the first image and the second image.In step S300, according to X
The compensation rate of axial displacement compensation adjusts the position of two camera points around x-ray, and according to the compensation rate of Y-axis bit shift compensation around Y line
Adjust the position of two camera points.
In the present embodiment, via two camera points not being located at right above semiconductor crystal wafer, camera shooting mould can be offset
The influence of the radial distortion of two camera lenses of group.Semiconductor crystal wafer camera module two camera lenses within sweep of the eye.Also,
From the first image and the second image obtained via two camera points, the compensation of X-axis bit shift compensation and Y-axis bit shift compensation is obtained
Amount.The compensation rate of X-axis bit shift compensation and Y-axis bit shift compensation further according to acquisition, adjusts the position of two camera points.Until determination
The direction of camera module acquisition image and semiconductor crystal wafer are vertical.
Above-described specific embodiment carries out goal of the invention of the invention, technical solution and beneficial effect
It is further to be described in detail.It should be appreciated that being not used to limit this foregoing is merely a specific embodiment of the invention
The protection scope of invention.It particularly points out, to those skilled in the art, all within the spirits and principles of the present invention, institute
Any modification, equivalent substitution, improvement and etc. done, should all be included in the protection scope of the present invention.
Claims (9)
1. a kind of semiconductor crystal wafer diced system based on computer vision, which is characterized in that including
Lower carrying platform, for carrying the semiconductor crystal wafer being made of several chips;
Upper carrying platform, including the bearing area for four same shapes divided with x-ray perpendicular to one another and Y line, wherein the X
The line intersection point of line and the Y line is located at the surface of the semiconductor crystal wafer;
Camera module, including the first camera unit and the second camera unit;First camera unit described is partly led for shooting
Body wafer and acquisition include the first image including the chip;Second camera unit is for shooting the semiconductor die
Justify and obtains comprising the second image including the chip;First camera unit and second camera unit are respectively mounted
In the upper carrying platform, and the line midpoint and the line intersection point of first camera unit and second camera unit
It is overlapped;
Mould group is adjusted, including X-axis adjusts unit and Y-axis adjusts unit;The X-axis adjusts unit and is operatively connected the upper carrying
Platform, and for driving the upper carrying platform to be stirred around the x-ray to meet X-axis bit shift compensation;The Y-axis adjusts unit
It is operatively connected the upper carrying platform, and for driving the upper carrying platform to stir around the Y line to meet Y-axis displacement
Compensation;And
Computer mould group, for obtaining the X-axis bit shift compensation and the Y-axis position according to the first image and second image
Move the compensation rate of compensation.
2. semiconductor crystal wafer diced system based on computer vision according to claim 1, which is characterized in that described
One camera unit and second camera unit are mounted on the upper carrying platform along the x-ray or the Y line.
3. semiconductor crystal wafer diced system based on computer vision according to claim 1, which is characterized in that described
One camera unit and second camera unit are separately mounted in centrosymmetric two bearing areas of the line intersection point.
4. semiconductor crystal wafer diced system based on computer vision according to claim 1, which is characterized in that described half
Semiconductor wafer has First look feature and the second visual signature;
When the length direction of the chip of the semiconductor crystal wafer is along the x-ray direction, the computer mould group is used for root
According to the First look feature in the First look feature and second image in comparison the first image, obtain
The compensation rate of the X-axis bit shift compensation;Also, the computer mould group is used for according to described second in comparison the first image
Second visual signature in visual signature and second image, obtains the compensation rate of the Y-axis bit shift compensation;
Wherein, the First look feature is the width of the chip of the semiconductor crystal wafer, and second visual signature is
The length of the chip of the semiconductor crystal wafer.
5. semiconductor crystal wafer diced system based on computer vision according to claim 1, which is characterized in that described half
Semiconductor wafer has First look feature and the second visual signature;
When the length direction of the chip of the semiconductor crystal wafer is along the Y line direction, the computer mould group is used for root
According to the First look feature in the First look feature and second image in comparison the first image, obtain
The compensation rate of the Y-axis bit shift compensation;Also, the computer mould group is used for according to described second in comparison the first image
Second visual signature in visual signature and second image, obtains the compensation rate of the X-axis bit shift compensation;
Wherein, the First look feature is the width of the chip of the semiconductor crystal wafer, and second visual signature is
The length of the chip of the semiconductor crystal wafer.
6. semiconductor crystal wafer diced system based on computer vision according to any one of claims 1 to 5, feature exist
In, after the adjusting mould group carries out X-axis bit shift compensation and Y-axis bit shift compensation to the upper carrying platform, the camera shooting mould
Group shoots the semiconductor crystal wafer and obtains comprising the third image including the chip;The computer mould group is according to described
Three images obtain the developed width value and actual height value of the chip.
7. semiconductor crystal wafer diced system based on computer vision according to claim 6, which is characterized in that described
After computer mould group obtains the developed width value and actual height value of the chip, the computer mould group is according to the developed width
Value and the actual height value, the template image for the semiconductor crystal wafer that production matching is made of several chips;Again will
Several profiles of the template image cover on several chips of the third image, to generate several shapes;
The most matched shape of reselection generates cutting line.
8. a kind of semiconductor crystal wafer cutting method based on computer vision, which is characterized in that for such as claim 1 to 7 times
Semiconductor crystal wafer diced system described in one is to cut the semiconductor crystal wafer being made of several chips;
The semiconductor crystal wafer diced system includes lower carrying platform, upper carrying platform, camera module, adjusts mould group, Yi Ji electricity
Brain mould group;The upper carrying platform includes the bearing area for four same shapes divided with x-ray perpendicular to one another and Y line;Institute
Stating camera module includes the first camera unit and the second camera unit;The adjusting mould group includes that X-axis adjusts unit and Y-axis adjusting
Unit;
The semiconductor crystal wafer cutting method includes
Step 1:, as midpoint, to distinguish positioned at the x-ray of the surface of the semiconductor crystal wafer and the line intersection point of the Y line
The first image and the second image including two camera points shoot the semiconductor crystal wafer and obtain comprising the chip;
Step 2: obtaining the compensation of X-axis bit shift compensation and Y-axis bit shift compensation according to the first image and second image
Amount;
Step 3: the position of two camera points is adjusted around the x-ray according to the compensation rate of the X-axis bit shift compensation, and
The position of two camera points is adjusted around the Y line according to the compensation rate of the Y-axis bit shift compensation.
9. semiconductor crystal wafer cutting method based on computer vision according to claim 8, which is characterized in that around described
X-ray adjusts the position of two camera points and carries out simultaneously around the position that the Y line adjusts two camera points.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811460425.5A CN109639930A (en) | 2018-12-01 | 2018-12-01 | A kind of semiconductor crystal wafer diced system based on computer vision and its cutting method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811460425.5A CN109639930A (en) | 2018-12-01 | 2018-12-01 | A kind of semiconductor crystal wafer diced system based on computer vision and its cutting method |
Publications (1)
Publication Number | Publication Date |
---|---|
CN109639930A true CN109639930A (en) | 2019-04-16 |
Family
ID=66070539
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811460425.5A Pending CN109639930A (en) | 2018-12-01 | 2018-12-01 | A kind of semiconductor crystal wafer diced system based on computer vision and its cutting method |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN109639930A (en) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102248309A (en) * | 2010-05-17 | 2011-11-23 | 苏州天弘激光股份有限公司 | Wafer laser dicing method and wafer laser dicing equipment with charge coupled device (CCD) assisting in positioning |
CN103034072A (en) * | 2012-12-20 | 2013-04-10 | 志圣科技(广州)有限公司 | Contraposition method for substrate to be exposed and negative film and image detection contraposition system |
CN105014240A (en) * | 2014-04-29 | 2015-11-04 | 中国科学院福建物质结构研究所 | LED wafer laser cutting device and LED wafer laser cutting levelness adjustment method |
CN204946113U (en) * | 2015-08-11 | 2016-01-06 | 华南理工大学 | A kind of optical axis verticality adjusting gear |
CN105335941A (en) * | 2015-08-11 | 2016-02-17 | 华南理工大学 | Optical axis verticality adjustment apparatus and adjustment method adopting same |
CN105345268A (en) * | 2014-08-18 | 2016-02-24 | 深圳市韵腾激光科技有限公司 | Laser scribing machine |
CN107680060A (en) * | 2017-09-30 | 2018-02-09 | 努比亚技术有限公司 | A kind of image distortion correction method, terminal and computer-readable recording medium |
US20180150939A1 (en) * | 2016-11-29 | 2018-05-31 | Industrial Technology Research Institute | Image processing method and image system for transportation |
-
2018
- 2018-12-01 CN CN201811460425.5A patent/CN109639930A/en active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102248309A (en) * | 2010-05-17 | 2011-11-23 | 苏州天弘激光股份有限公司 | Wafer laser dicing method and wafer laser dicing equipment with charge coupled device (CCD) assisting in positioning |
CN103034072A (en) * | 2012-12-20 | 2013-04-10 | 志圣科技(广州)有限公司 | Contraposition method for substrate to be exposed and negative film and image detection contraposition system |
CN105014240A (en) * | 2014-04-29 | 2015-11-04 | 中国科学院福建物质结构研究所 | LED wafer laser cutting device and LED wafer laser cutting levelness adjustment method |
CN105345268A (en) * | 2014-08-18 | 2016-02-24 | 深圳市韵腾激光科技有限公司 | Laser scribing machine |
CN204946113U (en) * | 2015-08-11 | 2016-01-06 | 华南理工大学 | A kind of optical axis verticality adjusting gear |
CN105335941A (en) * | 2015-08-11 | 2016-02-17 | 华南理工大学 | Optical axis verticality adjustment apparatus and adjustment method adopting same |
US20180150939A1 (en) * | 2016-11-29 | 2018-05-31 | Industrial Technology Research Institute | Image processing method and image system for transportation |
CN107680060A (en) * | 2017-09-30 | 2018-02-09 | 努比亚技术有限公司 | A kind of image distortion correction method, terminal and computer-readable recording medium |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105345254B (en) | Calibration method for positional relation between paraxial type visual system and laser vibrating mirror machining system | |
CN104439698B (en) | Scaling method and device for laser-processing system | |
KR101638687B1 (en) | Laser processing apparatus | |
CN1218159C (en) | Optical metering installation | |
CN108406096B (en) | Laser calibration method, processing method and device | |
US20040066454A1 (en) | Device and method of measuring data for calibration, program for measuring data for calibration, program recording medium readable with computer, and image data processing device | |
WO2012053521A1 (en) | Optical information processing device, optical information processing method, optical information processing system, and optical information processing program | |
CN103252576B (en) | Laser processing apparatus and laser processing method | |
US11620732B2 (en) | Multi-projection system, image projection method and projector | |
KR20110068375A (en) | Method for adjusting parameters in distortion calibration of image acquired by camera having fish eye lens | |
CN108637469A (en) | One kind patrolling edge system and its image processing method for being cut by laser vision | |
CN113215653B (en) | Method and system for determining distance between liquid ports | |
JP5091099B2 (en) | Imaging device | |
WO2014108976A1 (en) | Object detecting device | |
US20040109599A1 (en) | Method for locating the center of a fiducial mark | |
US20190200495A1 (en) | Chip-placing method performing an image alignment for chip placement and chip-placing apparatus thereof | |
CN106888344A (en) | Camera module and its inclined acquisition methods of image planes and method of adjustment | |
JP2015078852A (en) | Alignment method | |
CN105991912A (en) | Method for identifying feature objects in automatic heart-regulating process in camera module group | |
CN108230400B (en) | Self-adaptive coordinate reconstruction method suitable for laser cutting machine | |
CN109916328B (en) | V-shaped groove calibration plate and method for double-CCD laser measurement | |
CN109639930A (en) | A kind of semiconductor crystal wafer diced system based on computer vision and its cutting method | |
JP2015072444A (en) | Solid focusing method and system thereof | |
CN104237167A (en) | Correction method and system for distortion of scanning device during OCT sectional image scanning | |
US10290525B2 (en) | Marking method for wafer dice |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190416 |
|
RJ01 | Rejection of invention patent application after publication |