CN109639930A - A kind of semiconductor crystal wafer diced system based on computer vision and its cutting method - Google Patents

A kind of semiconductor crystal wafer diced system based on computer vision and its cutting method Download PDF

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CN109639930A
CN109639930A CN201811460425.5A CN201811460425A CN109639930A CN 109639930 A CN109639930 A CN 109639930A CN 201811460425 A CN201811460425 A CN 201811460425A CN 109639930 A CN109639930 A CN 109639930A
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semiconductor crystal
crystal wafer
image
chip
camera
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不公告发明人
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/80Camera processing pipelines; Components thereof
    • H04N23/81Camera processing pipelines; Components thereof for suppressing or minimising disturbance in the image signal generation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67294Apparatus for monitoring, sorting or marking using identification means, e.g. labels on substrates or labels on containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N17/00Diagnosis, testing or measuring for television systems or their details
    • H04N17/002Diagnosis, testing or measuring for television systems or their details for television cameras
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60Control of cameras or camera modules
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/90Arrangement of cameras or camera modules, e.g. multiple cameras in TV studios or sports stadiums

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Biomedical Technology (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

The present invention provides a kind of semiconductor crystal wafer diced system based on computer vision and its cutting method, the semiconductor crystal wafer diced system includes lower carrying platform, upper carrying platform, camera module, adjusts mould group and computer mould group;The upper carrying platform, including with the bearing area of x-ray perpendicular to one another and four same shapes of Y line segmentation;The camera module includes the first camera unit and the second camera unit;The adjusting mould group includes that X-axis adjusts unit and Y-axis adjusting unit.

Description

A kind of semiconductor crystal wafer diced system based on computer vision and its cutting method
Technical field
The present invention relates to a kind of cutting technique based on computer vision, in particular to a kind of based on computer vision half Semiconductor wafer diced system and its cutting method.
Background technique
After the completion of wafer manufacturing, wafer is cut, to obtain several independent chips.It is just sealed later It fills or is assembled.Since the gap between each chip is very small, usually all in microns.So being needed in cutting process It is accurately positioned.
Currently, generalling use advanced computer vision technique during cutting to wafer to obtain chip Dimension information.By taking conventional rectangular dies as an example, before determining cutting line, needing to obtain using video camera includes that chip exists Interior orthograph picture.The width information and elevation information of chip are obtained by algorithm later.
But because camera lens there are radial distortion, are difficult to determine direction and the crystalline substance that video camera obtains image Circle is vertical.Currently, having during being cut to wafer and demarcate to video camera and included to the video camera Image including chip is corrected.But it needs to handle mass data in this way, and the determination of cutting line will basis Image after correction, wherein just generating the error added up after data processing.
Summary of the invention
The technical problem to be solved by the present invention is to, provide a kind of semiconductor crystal wafer diced system based on computer vision and Its cutting method determines that camera module obtains the direction of image and partly leads during cutting to semiconductor crystal wafer Body wafer is vertical.
A technical solution of the invention is a kind of semiconductor crystal wafer diced system based on computer vision, including under hold Carrying platform, camera module, adjusts mould group and computer mould group at upper carrying platform.Lower carrying platform is for carrying by several chips The semiconductor crystal wafer of composition.Upper carrying platform includes the supporting region for four same shapes divided with x-ray perpendicular to one another and Y line Domain, wherein the line intersection point of the x-ray and the Y line is located at the surface of the semiconductor crystal wafer.Camera module is taken the photograph including first As unit and the second camera unit.First camera unit is for shooting the semiconductor crystal wafer and obtaining comprising the core The first image including piece.Second camera unit exists for shooting the semiconductor crystal wafer and obtaining comprising the chip The second interior image.First camera unit and second camera unit are installed in the upper carrying platform, and institute The line midpoint and the line intersection point for stating the first camera unit and second camera unit are overlapped.Adjusting mould group includes X-axis tune It saves unit and Y-axis adjusts unit.The X-axis adjusts unit and is operatively connected the upper carrying platform, and described for driving Upper carrying platform is stirred around the x-ray to meet X-axis bit shift compensation.The Y-axis adjusts unit and is operatively connected the upper carrying Platform, and for driving the upper carrying platform to stir around the Y line to meet Y-axis bit shift compensation.Computer mould group is used for root The compensation rate of the X-axis bit shift compensation and the Y-axis bit shift compensation is obtained according to the first image and second image.
As an embodiment, first camera unit and second camera unit along the x-ray or The Y line is mounted on the upper carrying platform.
As an embodiment, first camera unit and second camera unit are separately mounted to described In centrosymmetric two bearing areas of line intersection point.
As an embodiment, the semiconductor crystal wafer has First look feature and the second visual signature.Work as institute When stating the length direction of the chip of semiconductor crystal wafer along the x-ray direction, the computer mould group is used for according to comparison institute The First look feature in the First look feature and second image in the first image is stated, the X-axis is obtained The compensation rate of bit shift compensation.Also, the computer mould group is used for special according to second vision in comparison the first image Second visual signature sought peace in second image, obtains the compensation rate of the Y-axis bit shift compensation.Wherein, described One visual signature is the width of the chip of the semiconductor crystal wafer, and second visual signature is the semiconductor crystal wafer The length of the chip.
As an embodiment, the semiconductor crystal wafer has First look feature and the second visual signature.Work as institute When stating the length direction of the chip of semiconductor crystal wafer along the Y line direction, the computer mould group is used for according to comparison institute The First look feature in the First look feature and second image in the first image is stated, the Y-axis is obtained The compensation rate of bit shift compensation.Also, the computer mould group is used for special according to second vision in comparison the first image Second visual signature sought peace in second image, obtains the compensation rate of the X-axis bit shift compensation.Wherein, described One visual signature is the width of the chip of the semiconductor crystal wafer, and second visual signature is the semiconductor crystal wafer The length of the chip.
As an embodiment, X-axis bit shift compensation and Y-axis are carried out to the upper carrying platform in the adjusting mould group After bit shift compensation, the camera module shoots the semiconductor crystal wafer and obtains comprising the third figure including the chip Picture.The computer mould group obtains the developed width value and actual height value of the chip according to the third image.
As an embodiment, the developed width value and actual height value of the chip are obtained in the computer mould group Later, the computer mould group is according to the developed width value and the actual height value, and production matching is by several chipsets At the semiconductor crystal wafer template image.If several profiles of the template image are covered the third image again It does on the chip, to generate several shapes.The most matched shape of reselection generates cutting line.
Another technical solution of the invention is a kind of semiconductor crystal wafer cutting method based on computer vision, for half Semiconductor wafer diced system is to cut the semiconductor crystal wafer being made of several chips.Under the semiconductor crystal wafer diced system includes Carrying platform, camera module, adjusts mould group and computer mould group at upper carrying platform.The upper carrying platform includes to hang down each other The bearing area of straight x-ray and four same shapes of Y line segmentation.The camera module includes that the first camera unit and second is taken the photograph As unit.The adjusting mould group includes that X-axis adjusts unit and Y-axis adjusting unit.The semiconductor crystal wafer cutting method includes the One step, second step and third step.In the first step, to be located at the x-ray of surface of the semiconductor crystal wafer and described The line intersection point of Y line is midpoint, respectively including two camera points shoot the semiconductor crystal wafer and obtain comprising the chip The first image and the second image.In second step, X-axis bit shift compensation is obtained according to the first image and second image With the compensation rate of Y-axis bit shift compensation.In the third step, two are adjusted around the x-ray according to the compensation rate of the X-axis bit shift compensation The position of the camera point, and two camera points are adjusted around the Y line according to the compensation rate of the Y-axis bit shift compensation Position.
As an embodiment, the position of two camera points is adjusted around the x-ray and adjust two around the Y line The position of a camera point carries out simultaneously.
The beneficial effect of the present invention compared with the prior art is to be carried out according to the first image and the second image to camera module X-axis bit shift compensation and Y-axis bit shift compensation, until the direction and semiconductor crystal wafer that determine camera module acquisition image are vertical.Wherein The single camera lens for overcoming camera module can not overcome the influence of radial distortion, via two camera lenses of camera module by respective diameter It is offset to the influence of distortion.
Detailed description of the invention
Fig. 1 is the side view for the semiconductor crystal wafer diced system based on computer vision that one embodiment of the invention provides;
Fig. 2 is the functional block diagram for the semiconductor crystal wafer diced system based on computer vision that one embodiment of the invention provides;
Fig. 3 is the scheme of installation for the camera module that one embodiment of the invention provides;
Fig. 4 be another embodiment of the present invention provides camera module scheme of installation;
Fig. 5 is that the chip image frame in the first image and the second image that one embodiment of the invention provides selects schematic diagram;
Fig. 6 be another embodiment of the present invention provides the first image and the second image in chip image frame select schematic diagram;
Fig. 7 is the flow chart for the semiconductor crystal wafer cutting method based on computer vision that one embodiment of the invention provides.
In figure: 100, lower carrying platform;101, semiconductor crystal wafer;200, upper carrying platform;300, camera module;310, One camera unit;320, the second camera unit;400, mould group is adjusted;410, X-axis adjusts unit;420, Y-axis adjusts unit;500, Computer mould group.
Specific embodiment
Below in conjunction with attached drawing, the embodiment and advantage above-mentioned and other to the present invention are clearly and completely described. Obviously, described embodiment is only some embodiments of the invention, rather than whole embodiments.
As depicted in figs. 1 and 2.Fig. 1 shows the side view of semiconductor crystal wafer diced system based on computer vision, figure 2 show the functional block diagram of semiconductor crystal wafer diced system based on computer vision.
In one embodiment, semiconductor crystal wafer diced system based on computer vision include lower carrying platform, on Carrying platform, adjusts mould group and computer mould group at camera module.As shown in Figure 1, upper carrying platform is located at lower carrying platform Top, the two are opposite up and down.In this kind of embodiment, lower carrying platform is for carrying the semiconductor die being made of several chips Circle.Upper carrying platform is installed and for providing camera module for providing adjusting module operation connection.
As shown in figure 3, upper carrying platform is divided into the bearing area I of same shape by x-ray perpendicular to one another and Y line, holds Carry region II, bearing area III and bearing area IV.In figure, the line intersection point of x-ray and Y line is indicated with point O.Implement in this kind In mode, line intersection point is located at the surface of semiconductor crystal wafer.In conjunction with Fig. 1, camera module includes that the first camera unit and second is taken the photograph As unit.First camera unit and the second camera unit are installed in carrying platform, and both towards lower carrying platform. In this kind of embodiment, the first camera unit is used to shoot semiconductor crystal wafer and obtains comprising the first figure including chip Picture.Second camera unit is used to shoot semiconductor crystal wafer and obtains comprising the second image including chip.
It should be noted that as shown in figure 3, Points And lines intersection point weight in the line of the first camera unit and the second camera unit It closes.The line of the first camera unit and the second camera unit is indicated in figure with dotted line a.Actually it is, the first camera unit Camera point and the second camera unit camera point along line intersection point central symmetry.So no matter when upper carrying platform is along X Line direction generates inclination, or when generating inclination along Y line direction, in the first image obtained via the first camera unit Chip image in chip image and the second image obtained via the second camera unit creates a difference with actual chip.
For convenience of description, the above carrying platform is only generating inclination, and the first camera unit and second along x-ray direction For camera unit is mounted on upper carrying platform along x-ray, as shown in Figure 4.Assuming that the length direction of chip is along the line side Y To.When upper carrying platform is when generating inclination along x-ray direction, via the chip in the first image of the first camera unit acquisition Image is as shown in the chip image frame b in Fig. 5, via chip image such as Fig. 5 in the second image of the second camera unit acquisition In chip image frame c shown in.Chip image frame b and chip image frame c in Fig. 5 have intercepted the first camera unit and respectively The face part of the face part of one image and the second camera unit and the second image.In fact, due to the first camera unit The camera point of camera point and the second camera unit is different, via the first image of the first camera unit acquisition and via the second camera shooting The second image that unit obtains creates a difference.This difference is that the single camera lens of camera module can not embody.As shown in figure 5, working as For upper carrying platform when generating inclination along x-ray direction, the chip image in the first image and the second image is and actual core Piece creates a difference.Difference is embodied in, and the width w1 and width w2 of same chip generate difference.
Similarly, when upper carrying platform is only generating inclination, and the first camera unit and the second camera shooting list along Y line direction When member is mounted on upper carrying platform along Y line.It is still assumed that the length direction of chip is along Y line direction.It is single via the first camera shooting The chip image in the first image that member obtains as shown in the chip image frame d in Fig. 6, obtained via the second camera unit the Chip image in two images is as shown in the chip image frame e in Fig. 6.Chip image in first image and the second image and Actual chip creates a difference.Difference is embodied in, and the length l1 and width l2 of same chip generate difference.
But if the first camera unit and the second camera unit are separately mounted to hold with centrosymmetric two, line intersection point It carries in region.As shown in figure 3, the first camera unit is mounted on bearing area III, the second camera unit is mounted on bearing area II. So, no matter upper carrying platform is generating inclination along x-ray direction, or inclination is being generated along Y line direction.It is taken the photograph via first As unit obtain the first image in chip image and via the second camera unit obtain the second image in chip image Create a difference with actual chip.Also, via the first camera unit obtain the first image in chip image and via The chip image in the second image that second camera unit obtains also creates a difference.When the length direction of chip is along x-ray direction When, it can be using the width of chip as the First look feature of semiconductor crystal wafer, using the length of chip as semiconductor crystal wafer Second visual signature.It, still can be using the width of chip as semiconductor crystal wafer when the length direction of chip is along the line direction Y First look feature, using the length of chip as the second visual signature of semiconductor crystal wafer.
In this kind of embodiment, obtained via the first image of the first camera unit acquisition and via the second camera unit The second image via computer mould group dissection process, to obtain the compensation rate of X-axis bit shift compensation and Y-axis bit shift compensation.It passes through again By computer mould group according to dissection process as a result, generating the control instruction for adjusting unit and Y-axis adjusting unit to X-axis.Work as chip Length direction along x-ray direction when, computer mould group be used for according to comparison the first image in First look feature and the second figure First look feature as in obtains the compensation rate of X-axis bit shift compensation.Also, computer mould group is used for according to comparing the first image In the second visual signature and the second image in the second visual signature, obtain Y-axis bit shift compensation compensation rate.When the length of chip When spending direction along the line direction Y, computer mould group is used for according in the First look feature and the second image in the first image of comparison First look feature, obtain Y-axis bit shift compensation compensation rate.Also, computer mould group is used for according in the first image of comparison The second visual signature in second visual signature and the second image obtains the compensation rate of X-axis bit shift compensation.As shown in Figure 1, X-axis It adjusts unit and is operatively connected carrying platform, for driving upper carrying platform to stir around x-ray under the control of computer mould group, with Meet X-axis bit shift compensation.Y-axis adjusts unit and is operatively connected carrying platform, for driving under the control of computer mould group Carrying platform is stirred around Y line to meet Y-axis bit shift compensation.In this kind of embodiment, upper carrying platform carries out X-axis bit shift compensation After Y-axis bit shift compensation, the first image obtained via the first camera unit and the second figure obtained via the second camera unit As identical.Therefore the single camera lens for overcoming camera module can not overcome the influence of radial distortion, via two of camera module Camera lens offsets the influence of respective radial distortion.Because if the single camera lens of camera module be located at semiconductor crystal wafer just on Side, because there are radial distortions for camera lens, so even if direction and semiconductor crystal wafer out of plumb in camera module acquisition image In the case of, it is also difficult to it is embodied from the image obtained via camera module.
In one embodiment, semiconductor crystal wafer diced system based on computer vision is adjusting mould group to upper carrying After platform carries out X-axis bit shift compensation and Y-axis bit shift compensation, camera module shoots semiconductor crystal wafer and obtains to exist comprising chip Interior third image.Computer mould group obtains the developed width value and actual height value of chip according to third image.In this embodiment party In formula, the developed width value and actual height value of chip be determining each chip position and gap data according to.
In one embodiment, semiconductor crystal wafer diced system based on computer vision obtains chip in computer mould group Developed width value and actual height value after, computer mould group according to developed width value and actual height value, if production matching by The template image of the semiconductor crystal wafer of dry chip composition.Several profiles of template image are covered to several cores of third image again On piece, to generate several shapes.The most matched shape of reselection generates cutting line.In the present embodiment, it cuts Line is the basis that semiconductor crystal wafer diced system based on computer vision is cut.
In addition, in one embodiment, semiconductor crystal wafer cutting method based on computer vision is used for semiconductor die Circle diced system is to cut the semiconductor crystal wafer being made of several chips.
As depicted in figs. 1 and 2, semiconductor crystal wafer diced system include lower carrying platform, upper carrying platform, camera module, Adjust mould group and computer mould group.Upper carrying platform includes four same shapes divided with x-ray perpendicular to one another and Y line Bearing area.Camera module includes the first camera unit and the second camera unit.Adjusting mould group includes that X-axis adjusts unit and Y-axis Adjust unit.
As shown in fig. 7, semiconductor crystal wafer cutting method includes the steps that sequentially executing S100, step S200, Yi Jibu Rapid S300.In the step s 100, to be located at the x-ray of the surface of semiconductor crystal wafer and the line intersection point of Y line as midpoint, respectively two A camera point shoots semiconductor crystal wafer and obtains comprising the first image and the second image including chip.In step s 200, The compensation rate of X-axis bit shift compensation and Y-axis bit shift compensation is obtained according to the first image and the second image.In step S300, according to X The compensation rate of axial displacement compensation adjusts the position of two camera points around x-ray, and according to the compensation rate of Y-axis bit shift compensation around Y line Adjust the position of two camera points.
In the present embodiment, via two camera points not being located at right above semiconductor crystal wafer, camera shooting mould can be offset The influence of the radial distortion of two camera lenses of group.Semiconductor crystal wafer camera module two camera lenses within sweep of the eye.Also, From the first image and the second image obtained via two camera points, the compensation of X-axis bit shift compensation and Y-axis bit shift compensation is obtained Amount.The compensation rate of X-axis bit shift compensation and Y-axis bit shift compensation further according to acquisition, adjusts the position of two camera points.Until determination The direction of camera module acquisition image and semiconductor crystal wafer are vertical.
Above-described specific embodiment carries out goal of the invention of the invention, technical solution and beneficial effect It is further to be described in detail.It should be appreciated that being not used to limit this foregoing is merely a specific embodiment of the invention The protection scope of invention.It particularly points out, to those skilled in the art, all within the spirits and principles of the present invention, institute Any modification, equivalent substitution, improvement and etc. done, should all be included in the protection scope of the present invention.

Claims (9)

1. a kind of semiconductor crystal wafer diced system based on computer vision, which is characterized in that including
Lower carrying platform, for carrying the semiconductor crystal wafer being made of several chips;
Upper carrying platform, including the bearing area for four same shapes divided with x-ray perpendicular to one another and Y line, wherein the X The line intersection point of line and the Y line is located at the surface of the semiconductor crystal wafer;
Camera module, including the first camera unit and the second camera unit;First camera unit described is partly led for shooting Body wafer and acquisition include the first image including the chip;Second camera unit is for shooting the semiconductor die Justify and obtains comprising the second image including the chip;First camera unit and second camera unit are respectively mounted In the upper carrying platform, and the line midpoint and the line intersection point of first camera unit and second camera unit It is overlapped;
Mould group is adjusted, including X-axis adjusts unit and Y-axis adjusts unit;The X-axis adjusts unit and is operatively connected the upper carrying Platform, and for driving the upper carrying platform to be stirred around the x-ray to meet X-axis bit shift compensation;The Y-axis adjusts unit It is operatively connected the upper carrying platform, and for driving the upper carrying platform to stir around the Y line to meet Y-axis displacement Compensation;And
Computer mould group, for obtaining the X-axis bit shift compensation and the Y-axis position according to the first image and second image Move the compensation rate of compensation.
2. semiconductor crystal wafer diced system based on computer vision according to claim 1, which is characterized in that described One camera unit and second camera unit are mounted on the upper carrying platform along the x-ray or the Y line.
3. semiconductor crystal wafer diced system based on computer vision according to claim 1, which is characterized in that described One camera unit and second camera unit are separately mounted in centrosymmetric two bearing areas of the line intersection point.
4. semiconductor crystal wafer diced system based on computer vision according to claim 1, which is characterized in that described half Semiconductor wafer has First look feature and the second visual signature;
When the length direction of the chip of the semiconductor crystal wafer is along the x-ray direction, the computer mould group is used for root According to the First look feature in the First look feature and second image in comparison the first image, obtain The compensation rate of the X-axis bit shift compensation;Also, the computer mould group is used for according to described second in comparison the first image Second visual signature in visual signature and second image, obtains the compensation rate of the Y-axis bit shift compensation;
Wherein, the First look feature is the width of the chip of the semiconductor crystal wafer, and second visual signature is The length of the chip of the semiconductor crystal wafer.
5. semiconductor crystal wafer diced system based on computer vision according to claim 1, which is characterized in that described half Semiconductor wafer has First look feature and the second visual signature;
When the length direction of the chip of the semiconductor crystal wafer is along the Y line direction, the computer mould group is used for root According to the First look feature in the First look feature and second image in comparison the first image, obtain The compensation rate of the Y-axis bit shift compensation;Also, the computer mould group is used for according to described second in comparison the first image Second visual signature in visual signature and second image, obtains the compensation rate of the X-axis bit shift compensation;
Wherein, the First look feature is the width of the chip of the semiconductor crystal wafer, and second visual signature is The length of the chip of the semiconductor crystal wafer.
6. semiconductor crystal wafer diced system based on computer vision according to any one of claims 1 to 5, feature exist In, after the adjusting mould group carries out X-axis bit shift compensation and Y-axis bit shift compensation to the upper carrying platform, the camera shooting mould Group shoots the semiconductor crystal wafer and obtains comprising the third image including the chip;The computer mould group is according to described Three images obtain the developed width value and actual height value of the chip.
7. semiconductor crystal wafer diced system based on computer vision according to claim 6, which is characterized in that described After computer mould group obtains the developed width value and actual height value of the chip, the computer mould group is according to the developed width Value and the actual height value, the template image for the semiconductor crystal wafer that production matching is made of several chips;Again will Several profiles of the template image cover on several chips of the third image, to generate several shapes; The most matched shape of reselection generates cutting line.
8. a kind of semiconductor crystal wafer cutting method based on computer vision, which is characterized in that for such as claim 1 to 7 times Semiconductor crystal wafer diced system described in one is to cut the semiconductor crystal wafer being made of several chips;
The semiconductor crystal wafer diced system includes lower carrying platform, upper carrying platform, camera module, adjusts mould group, Yi Ji electricity Brain mould group;The upper carrying platform includes the bearing area for four same shapes divided with x-ray perpendicular to one another and Y line;Institute Stating camera module includes the first camera unit and the second camera unit;The adjusting mould group includes that X-axis adjusts unit and Y-axis adjusting Unit;
The semiconductor crystal wafer cutting method includes
Step 1:, as midpoint, to distinguish positioned at the x-ray of the surface of the semiconductor crystal wafer and the line intersection point of the Y line The first image and the second image including two camera points shoot the semiconductor crystal wafer and obtain comprising the chip;
Step 2: obtaining the compensation of X-axis bit shift compensation and Y-axis bit shift compensation according to the first image and second image Amount;
Step 3: the position of two camera points is adjusted around the x-ray according to the compensation rate of the X-axis bit shift compensation, and The position of two camera points is adjusted around the Y line according to the compensation rate of the Y-axis bit shift compensation.
9. semiconductor crystal wafer cutting method based on computer vision according to claim 8, which is characterized in that around described X-ray adjusts the position of two camera points and carries out simultaneously around the position that the Y line adjusts two camera points.
CN201811460425.5A 2018-12-01 2018-12-01 A kind of semiconductor crystal wafer diced system based on computer vision and its cutting method Pending CN109639930A (en)

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