CN109638644A - A kind of swept light source and preparation method thereof - Google Patents

A kind of swept light source and preparation method thereof Download PDF

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Publication number
CN109638644A
CN109638644A CN201910074468.8A CN201910074468A CN109638644A CN 109638644 A CN109638644 A CN 109638644A CN 201910074468 A CN201910074468 A CN 201910074468A CN 109638644 A CN109638644 A CN 109638644A
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China
Prior art keywords
cantilever beam
substrate
electrode
transparent region
light source
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CN201910074468.8A
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付红岩
谢启浩
陈震旻
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Tsinghua Berkeley Shenzhen College Preparatory Office
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Tsinghua Berkeley Shenzhen College Preparatory Office
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Priority to CN201910074468.8A priority Critical patent/CN109638644A/en
Publication of CN109638644A publication Critical patent/CN109638644A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125Distributed Bragg reflector [DBR] lasers

Abstract

The embodiment of the present invention provides a kind of swept light source and preparation method thereof, swept light source includes: first electrode, the first substrate, the first distributed bragg reflector mirror, active layer and the second electrode of successively lamination setting, and the second electrode is located at the non-transparent region;Frame is located at the second electrode far from first one side of substrate, and is located at the second electrode far from the transmission region side, and the frame surrounds the second electrode one week;Cantilever beam structure is fixed on the frame, and the cantilever beam structure includes same layer setting and support membrane interconnected and at least two cantilever beams, the support membrane are located at the transmission region, and the cantilever beam is located at the non-transparent region;Second distributed bragg reflector mirror is fixed on the support membrane;Piezoelectric structure is fixed on the cantilever beam.The embodiment of the present invention provides a kind of swept light source and preparation method thereof, provides a kind of novel swept light source to realize.

Description

A kind of swept light source and preparation method thereof
Technical field
The present embodiments relate to optical image technologies more particularly to a kind of swept light source and preparation method thereof.
Background technique
Optical coherence tomography (OCT) is the optical image technology of a kind of non-intruding, hurtless measure, real-time for generating to sample Two-dimensional cross sectional image and three-dimensional volumetric images.This technology is generated based on the light backscattering of the different material layer out of sample The image of micrometer resolution and millimeter imaging depth, to provide the structural information about sample.Other than high-resolution, Contactless, the hurtless measure property of optical coherence tomography are very suitable to it to biological tissue, toy and industrial materials etc. Sample is imaged.
The main frame of optical coherence tomography (OCT) is Michelson's interferometer, utilizes the letter after two-beam coherent superposition Number the information of object different depth is characterized, to learn the appearance structure of interior of articles.OCT points are two major classes: time domain at present OCT (TD-OCT) and Fourier OCT (FD-OCT).TD-OCT realizes axial scan based on the Mechanical Moving of reference arm to obtain The information of object under test different depth, because the frequency limit scanning speed for being limited by Mechanical Moving is lower.The ginseng of FD-OCT system It is fixed to examine arm, is based on low coherence interference technology.Fourier OCT can be divided into two classes according to light source and detection type: spectrum Domain OCT (SD-OCT) and swept light source OCT (SS-OCT).SD-OCT uses broadband low coherence light source, while emitting with more Then the light beam of a wavelength components is separated these light using grating, the light of different wave length receives (linear array by different detectors CCD).The scanning speed of SD-OCT is limited by the reading speed of linear array CCD camera.SS-OCT uses swept light source, will not Co-wavelength is scattered in different time points, and after being measured by single high-speed photodetector.Due to swept laser source High speed frequency sweep can be used for positioned at the high-peak power of each discrete wavelength to sample illumination, higher quick so as to generate Sensitivity.
In patent CN105518951B, swept laser source is that frequency sweep is realized by way of electrostatic drive.It is so-called quiet Electric drive technology, the technology exactly driven using the Coulomb force between charge as driving force.By the electricity of control Voltage Establishment An electrostatic force is generated between the two poles of the earth, causes diaphragm deformation occurs bending, and deflection changes with voltage.Remove control electricity After pressure, electric field force disappears, and diaphragm returns to original state under the action of elastic restoring force.But there are also lack for electrostatic drive Point is such as usually limited by 1/3 rule, and maximum deflection is up to the 1/3 of original air-gap separation;Most destructive disadvantage It is, when being attracted effect generation, it is possible to occur to destroy the catastrophic electric discharge of swept light source, bibliography: Mateus C F R, Chang C H,Chrostowski L,et al.Widely tunable torsional optical filter[J].IEEE Photonics Technology Letters,2002,14(6):819-821.
Summary of the invention
The embodiment of the present invention provides a kind of swept light source and preparation method thereof, provides a kind of novel frequency light source to realize.
The embodiment of the present invention provides a kind of swept light source, including transmission region and non-transparent region, the non-transparent region Around the transmission region, comprising:
The successively first electrode of lamination setting, the first substrate, the first distributed bragg reflector mirror, active layer and the second electricity Pole, the second electrode are located at the non-transparent region;
Frame is located at the second electrode far from first one side of substrate, and is located at the second electrode far from described Transmission region side, the frame surround the second electrode one week;
Cantilever beam structure is fixed on the frame, and the cantilever beam structure includes same layer setting and branch interconnected Support film and at least two cantilever beams, the support membrane are located at the transmission region, and the cantilever beam is located at the non-transparent region;
Second distributed bragg reflector mirror is fixed on the support membrane;
Piezoelectric structure is fixed on the cantilever beam.
Optionally, second distributed bragg reflector mirror and the piezoelectric structure are respectively positioned on the cantilever beam structure Far from first one side of substrate.
Optionally, second distributed bragg reflector mirror and the piezoelectric structure are respectively positioned on the cantilever beam structure Between first substrate;
The swept light source further includes second substrate opposed with first substrate, and second substrate includes first recessed Slot and the second groove, second groove are located at the first groove adjacent to the side of first substrate, and second groove Opening area is greater than the opening area of first groove, and the side wall of the side wall of first groove and second groove is total With the composition frame;Second substrate is provided with light hole in the transmission region.
Optionally, the plan view shape of the frame includes rectangle, and the cantilever beam structure includes four cantilever beams;
One end of each cantilever beam is connected with the midpoint on the side of the rectangle, the other end of each cantilever beam It is connected with the support membrane;Alternatively, one end of each cantilever beam is connected with the turning of the rectangle, it is each described outstanding The other end of arm beam is connected with the support membrane.
Optionally, the piezoelectric structure includes third electrode, piezoelectric membrane and the 4th electrode of successively lamination setting.
Optionally, along the direction of vertical first substrate, the thickness of the support membrane and the cantilever beam is L, Wherein, 0.5 μm≤L≤1 μm.
The embodiment of the present invention provides a kind of production method of swept light source, and the swept light source includes transmission region and non- Light region, the non-transparent region surround the transmission region, and the production method includes:
Sequentially form first electrode, the first substrate, the first distributed bragg reflector mirror, active layer and the of lamination setting Two electrodes, the second electrode are located at the non-transparent region;
Frame is formed in the non-transparent region;
The cantilever beam structure being fixedly connected with the frame is formed in the frame side, the cantilever beam structure includes same Layer is arranged and support membrane interconnected and at least two cantilever beams, the support membrane are located at the transmission region, the cantilever Beam is located at the non-transparent region;
The second distributed bragg reflector mirror being fixedly connected with the support membrane, Yi Ji are formed on the support membrane The piezoelectric structure being fixedly connected with the cantilever beam is formed on the cantilever beam.
Optionally, second distributed bragg reflector mirror and the piezoelectric structure are respectively positioned on the cantilever beam structure Far from first one side of substrate;
The production method includes:
Sequentially form first electrode, the first substrate, the first distributed bragg reflector mirror, active layer and the of lamination setting Two electrodes, the second electrode are located at the non-transparent region;
It is formed in the second electrode far from first one side of substrate and covers the transmission region and the alternatively non-transparent district The sacrificial layer in domain;
It is formed in the sacrificial layer far from first one side of substrate and covers the transmission region and the non-transparent region Cantilever beam structure material layer;
Piezoelectricity is formed in the non-transparent region of the cantilever beam structure material layer far from first one side of substrate Structural material;
Second point is formed in the transmission region of the cantilever beam structure material layer far from first one side of substrate Cloth Bragg mirror;
The piezoelectric structure material layer of the part in the non-transparent region is removed to form the piezoelectric structure, removes institute The cantilever beam structure material layer of the part in non-transparent region is stated to form the cantilever beam structure, removes the alternatively non-transparent district The part sacrificial layer in domain, to form the frame.
Optionally, second distributed bragg reflector mirror and the piezoelectric structure are respectively positioned on the cantilever beam structure Far from first one side of substrate;
The production method includes:
Sequentially form first electrode, the first substrate, the first distributed bragg reflector mirror, active layer and the of lamination setting Two electrodes, the second electrode are located at the non-transparent region;
Second substrate is provided;Second substrate includes the first groove and the second groove, the opening face of second groove Described in the side wall of the long-pending opening area for being greater than first groove, the side wall of first groove and second groove is constituted Frame;
The sacrificial layer for covering the transmission region and the non-transparent region is formed in first groove;
It is formed in second groove of the sacrificial layer far from second one side of substrate and covers the transmission region With the cantilever beam structure material layer in the non-transparent region;
Piezoelectricity is formed in the non-transparent region of the cantilever beam structure material layer far from second one side of substrate Structural material;
Second point is formed in the transmission region of the cantilever beam structure material layer far from second one side of substrate Cloth Bragg mirror;
The piezoelectric structure material layer of the part in the non-transparent region is removed to form piezoelectric structure, is removed described non- The part cantilever beam structure material layer in transmission region removes the sacrificial layer to form cantilever beam structure;
The part that second substrate is located in the transmission region is removed, to form light hole;
By second substrate be formed with second distributed bragg reflector mirror side and the first substrate shape At having the side of second electrode to integrator.
Optionally, the second distributed bragg reflector mirror being fixedly connected with the support membrane is formed on the support membrane Include:
Third electrode, piezoelectric membrane and the 4th electrode are sequentially formed on the support membrane.
The embodiment of the present invention provides a kind of swept light source, including frame and cantilever beam structure, frame supporting cantilever girder construction, Cantilever beam structure includes same layer setting and cantilever beam interconnected and support membrane, the second distributed bragg reflector mirror are fixed on On support membrane.Swept light source further includes the piezoelectric structure being fixed on cantilever beam, and piezoelectric structure is used to change shape according to voltage, Therefore piezoelectric structure can cause cantilever vibration of beam, to change Resonant Intake System (the first distributed bragg reflector mirror and the The distance between two distributed bragg reflector mirrors are Resonant Intake System), it realizes the high speed consecutive variations of shoot laser wavelength, provides A kind of novel swept light source.
Detailed description of the invention
Fig. 1 is a kind of overlooking structure diagram of swept light source provided in an embodiment of the present invention;
Fig. 2 is the schematic diagram of the section structure of the AA ' along Fig. 1;
Fig. 3 is the overlooking structure diagram of another swept light source provided in an embodiment of the present invention;
Fig. 4 is the schematic diagram of the section structure of another swept light source provided in an embodiment of the present invention;
Fig. 5 is a kind of production method flow chart of swept light source provided in an embodiment of the present invention;
Fig. 6 is the production method flow chart of another swept light source provided in an embodiment of the present invention;
Fig. 7 A- Fig. 7 E is a kind of production schematic diagram of scanning light source provided in an embodiment of the present invention;
Fig. 8 is the production method flow chart of another swept light source provided in an embodiment of the present invention;
Fig. 9 A- Fig. 9 H is a kind of production schematic diagram of scanning light source provided in an embodiment of the present invention.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched The specific embodiment stated is used only for explaining the present invention rather than limiting the invention.It also should be noted that in order to just Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.
Fig. 1 is a kind of overlooking structure diagram of swept light source provided in an embodiment of the present invention, and Fig. 2 is the AA ' along Fig. 1 The schematic diagram of the section structure, with reference to Fig. 1 and Fig. 2, swept light source include transmission region 100 (region in Fig. 1 in dashed circle) and Non-transparent region 200 (region in Fig. 1 outside dashed circle), non-transparent region 200 surround transmission region 100.Swept light source packet It includes: the successively first electrode 11 of lamination setting, the first substrate 12, the first distributed bragg reflector mirror 13, active layer 14 and the Two electrodes 16, second electrode 16 are located at non-transparent region 100.Swept light source includes: 22, second points of frame 21, cantilever beam structure Cloth Bragg mirror 23 and piezoelectric structure 24.Frame 21 is located at second electrode 16 far from 12 side of the first substrate, and is located at For second electrode 16 far from 100 side of transmission region, frame 21 is located at non-transparent region 200, and frame 21 surrounds second electrode 16 1 Week.Cantilever beam structure 22 is fixed on frame 21, and cantilever beam structure 22 includes same layer setting and 222 He of support membrane interconnected At least two cantilever beams 221, support membrane 222 are located at transmission region 100, and cantilever beam 221 is located at non-transparent region 200.Second point Cloth Bragg mirror 23 is fixed on support membrane 222.Piezoelectric structure 24 is fixed on cantilever beam 221.
The embodiment of the present invention provides a kind of swept light source, including frame and cantilever beam structure, frame supporting cantilever girder construction, Cantilever beam structure includes same layer setting and cantilever beam interconnected and support membrane, the second distributed bragg reflector mirror are fixed on On support membrane.Swept light source further includes the piezoelectric structure being fixed on cantilever beam, and piezoelectric structure is used to change shape according to voltage, Therefore piezoelectric structure can cause cantilever vibration of beam, to change Resonant Intake System (the first distributed bragg reflector mirror and the The distance between two distributed bragg reflector mirrors are Resonant Intake System), the high speed consecutive variations of shoot laser wavelength are realized, with reality A kind of novel swept light source is now provided.
Optionally, with reference to Fig. 1 and Fig. 2, the second distributed bragg reflector mirror 23 and piezoelectric structure 24 are respectively positioned on cantilever Girder construction 22 is far from 12 side of the first substrate.In another embodiment, the second distributed bragg reflector mirror 23 can be located at Cantilever beam structure 22 far from 12 side of the first substrate, piezoelectric structure 24 can be located at cantilever beam structure 22 and the first substrate 12 it Between.In another embodiment, the second distributed bragg reflector mirror 23 can be located at cantilever beam structure 22 in the first substrate 12 Between, piezoelectric structure 24 can be located at cantilever beam structure 22 far from 12 side of the first substrate.In another embodiment, second point Cloth Bragg mirror 23 and piezoelectric structure 24 are respectively positioned between cantilever beam structure 22 and the first substrate 12.Second is distributed The position of Bragg mirror 23 and piezoelectric structure 24 can according to need setting, and this is not limited by the present invention.
Optionally, with reference to Fig. 1, the plan view shape of frame 21 includes rectangle, and cantilever beam structure 22 includes four cantilever beams 221.One end of each cantilever beam 221 is connected with the midpoint on the side of rectangle, the other end and support membrane of each cantilever beam 221 222 are connected.Cantilever beam structure 22 includes four cantilever beams 221 in the embodiment of the present invention, both ensure that sufficient amount of outstanding Arm beam 221 is that the second distributed bragg reflector mirror 23 provides reliable support, in turn avoids excessive amount of 221 shadow of cantilever beam Ring vibrating effect.
Fig. 3 is the overlooking structure diagram of another swept light source provided in an embodiment of the present invention, with reference to Fig. 3, frame 21 Plan view shape include rectangle, cantilever beam structure 22 includes four cantilever beams 221.One end of each cantilever beam 221 and rectangle Turning is connected, and the other end of each cantilever beam 221 is connected with support membrane 222.Cantilever beam structure 22 in the embodiment of the present invention Including four cantilever beams 221, it both ensure that sufficient amount of cantilever beam 221 was that the second distributed bragg reflector mirror 23 provides Reliable support, in turn avoiding excessive amount of cantilever beam 221 influences vibrating effect.
Optionally, with reference to Fig. 1 and Fig. 2, piezoelectric structure 24 includes third electrode 241, the piezoelectric membrane of successively lamination setting 242 and the 4th electrode 243.Third electrode 241 and the 4th electrode 243 are that piezoelectric membrane 242 provides operating voltage or work electricity Stream, to utilize the deformation of inverse piezoelectric effect control piezoelectric membrane 242.When application electric field on crystal causes polarization, then will The deformation or mechanical stress proportional to electric field strength occurs, this phenomenon is known as inverse piezoelectric effect.
Optionally, with reference to Fig. 1 and Fig. 2, along the direction of vertical first substrate 12, the thickness of support membrane 222 and cantilever beam 221 Degree is L, wherein 0.5 μm≤L≤1 μm.0.5 μm≤L≤1 μm is set in the embodiment of the present invention, both ensure that adequate thickness Support membrane 222 and cantilever beam 221 be the second distributed bragg reflector mirror 23 reliable support is provided, in turn avoid blocked up Support membrane 222 and cantilever beam 221 influence vibrating effect.
Fig. 4 is the schematic diagram of the section structure of another swept light source provided in an embodiment of the present invention, with reference to Fig. 4, second point Cloth Bragg mirror 23 and piezoelectric structure 24 are respectively positioned between cantilever beam structure 22 and the first substrate 12.Swept light source is also Including second substrate 25 opposed with the first substrate 12, the second substrate 25 includes the first groove 251 and the second groove 252, and second Groove 252 is located at the first groove 251 adjacent to the side of the first substrate 12, and the opening area of the second groove 252 is recessed greater than first The side wall of the opening area of slot 251, the side wall of the first groove 251 and the second groove 252 collectively forms frame 21.Second substrate 25 are provided with light hole 253 in transmission region 100.
Optionally, with reference to Fig. 2 and Fig. 4, swept light source can also include contact layer 15 and high transmittance film 17, and contact layer 15 is located at Transmission region 100 and non-transparent region 200, contact layer is between active layer 14 and second electrode 16.High transmittance film 17 is located at saturating Light region 100, high transmittance film 17 are also referred to as anti-reflective film, for enhancing transmission and weakening reflection, to improve light extraction efficiency.It is high saturating Film 17 can be arranged with 16 same layer of second electrode, and high transmittance film 17 is located at contact layer 15 far from 14 side of active layer.
Optionally, it with reference to Fig. 2 and Fig. 4, can also be wrapped between active layer 14 and the first distributed bragg reflector mirror 13 The structure commonly used in the art such as clad is included, details are not described herein.
Fig. 5 is a kind of production method flow chart of swept light source provided in an embodiment of the present invention, with reference to Fig. 1-Fig. 4, and Fig. 5, swept light source include transmission region 100 and non-transparent region 200, and non-transparent region 200 surrounds transmission region 100, frequency sweep The production method of light source includes the following steps:
S110, the first electrode 11 for sequentially forming lamination setting, the first substrate 12, the first distributed bragg reflector mirror 13, active layer 14 and second electrode 16, second electrode 6 are located at non-transparent region 200.
S120, frame 21 is formed in non-transparent region 200.
S130, the cantilever beam structure 22 being fixedly connected with frame 21 is formed in 21 side of frame, cantilever beam structure 22 includes Same layer is arranged and support membrane interconnected 222 and at least two cantilever beams 221, support membrane 222 are located at transmission region 100, hangs Arm beam 221 is located at non-transparent region 200.
S140, the second distributed bragg reflector mirror 23 being fixedly connected with support membrane 222 is formed on support membrane 222, And the piezoelectric structure 24 being fixedly connected with cantilever beam 221 is formed on cantilever beam 221.
The embodiment of the present invention provides a kind of production method of swept light source, the frequency sweep being used to form in any of the above-described embodiment Light source, the production method of swept light source include: to form frame and cantilever beam structure, frame supporting cantilever girder construction, cantilever beam knot Structure includes same layer setting and cantilever beam interconnected and support membrane.The second distributed Bragg that support membrane is fixed in formation is anti- Penetrate mirror.Form the piezoelectric structure for being fixed on cantilever beam.Since piezoelectric structure is used to change shape, piezoelectric structure according to voltage It can cause cantilever vibration of beam, to change Resonant Intake System (the first distributed bragg reflector mirror and the second distributed Bradley The distance between lattice reflecting mirror is Resonant Intake System), it realizes the high speed consecutive variations of shoot laser wavelength, provides one kind newly to realize The swept light source of type.
Optionally, the second distributed bragg reflector mirror being fixedly connected with support membrane 222 is formed on support membrane 222 23, it may include steps of: sequentially forming third electrode 241, piezoelectric membrane 242 and the 4th electrode on support membrane 222 243.Illustratively, it is initially formed third electrode material layer, piezoelectric film material layer and the 4th electrode material layer, then passes through etching Technique etch away sections third electrode material layer, the 4th electrode material layer of part piezoelectric film material layer and part, to be formed such as Second distributed bragg reflector mirror 23 of plan structure shown in FIG. 1 and cross-section structure as shown in Figure 2.
Fig. 6 is the production method flow chart of another swept light source provided in an embodiment of the present invention, and Fig. 7 A- Fig. 7 E is this hair The production schematic diagram for a kind of scanning light source that bright embodiment provides, with reference to Fig. 1, Fig. 2, Fig. 6 and Fig. 7 A- Fig. 7 E, the second distribution Formula Bragg mirror 23 and piezoelectric structure 24 are respectively positioned on cantilever beam structure 22 far from 12 side of the first substrate, swept light source Production method includes the following steps:
S210, the first electrode 11 for sequentially forming lamination setting, the first substrate 12, the first distributed bragg reflector mirror 13, active layer 14 and second electrode 16, second electrode 6 are located at non-transparent region 200.
S220, covering transmission region 100 and non-transparent region 200 are formed far from 12 side of the first substrate in second electrode 16 Sacrificial layer 210.
Chemical vapor deposition method can be used in the deposition of sacrificial layer 210, and the material of sacrificial layer 210 can use phosphorosilicate glass (phosphor silicate glass, PSG).
S230, covering transmission region 100 and non-transparent region 200 are formed far from 12 side of the first substrate in sacrificial layer 210 Cantilever beam structure material layer 220.
Cantilever beam structure material layer 220 can be formed by the way of cvd silicon nitride material.
S240, piezoelectricity is formed in non-transparent region 200 of the cantilever beam structure material layer 220 far from 12 side of the first substrate Structural material 240.
Piezoelectric structure material layer 240 may include third electrode material layer, piezoelectric film material layer and the 4th electrode material Layer.
The forming method of third electrode material layer can be with are as follows:
Then the resist coating in cantilever beam structure material layer 220 exposes, develops;Wash the light in non-transparent region 200 Photoresist retains the photoresist of transmission region 100.Pt/Ti film is deposited using physical gas-phase deposite method;Wherein, Pt film thickness About 0.1 μm, Ti film thickness is about 0.01 μm;Then the photoresist of transmission region 100 and the Pt/Ti of transmission region 100 are removed Film.
The forming method of piezoelectric film material layer can be with are as follows:
Lead zirconate titanate (also referred to as PZT) film is formed using sol-gel method (Sol--Gel method).Then dry etching is used Technique is patterned lead zirconate titanate membrane, removes the lead zirconat-titanato material of transmission region 100 and retains non-transparent region 200 Lead zirconat-titanato material.Lead zirconate titanate chemical formula is Pb (ZrxTi1-x) O3, lead zirconate titanate is with excellent piezoelectric property.Piezoelectricity is thin The thickness of film can be several hundred nanometers to 2 microns.
The forming method of 4th electrode material layer is similar with the forming method of third electrode material layer, and details are not described herein.
S250, second point is formed in transmission region 100 of the cantilever beam structure material layer 220 far from 12 side of the first substrate Cloth Bragg mirror 23.
Part piezoelectric structure material layer 240 in S260, the non-transparent region 200 of removal is to form piezoelectric structure 23, removal Part cantilever beam structure material layer 220 in non-transparent region 200 removes non-transparent region 200 to form cantilever beam structure 22 Interior partial sacrificial layer 210, to form frame 21.
Swept light source as shown in Figure 2 can be formed to step S260 by step S210.
Optionally, before step S250, the production method of swept light source can also include the following steps:
S241, it deposits to form one layer of etching barrier layer using silicon nitride material.
The mode for forming etching barrier layer can for example use chemical vapour deposition technique.The thickness of etching barrier layer is 0.05 Micron is between 0.1 micron.
Fig. 8 is the production method flow chart of another swept light source provided in an embodiment of the present invention, and Fig. 9 A- Fig. 9 H is this hair The production schematic diagram for a kind of scanning light source that bright embodiment provides, with reference to Fig. 1, Fig. 4, Fig. 8 and Fig. 9 A- Fig. 9 H, the second distribution Formula Bragg mirror 23 and piezoelectric structure 24 are respectively positioned between cantilever beam structure 22 and the first substrate 12.The system of swept light source Include the following steps: as method
S310, the first electrode 11 for sequentially forming lamination setting, the first substrate 12, the first distributed bragg reflector mirror 13, active layer 14 and second electrode 16, second electrode 6 are located at non-transparent region 200.
S320, the second substrate 25 is provided;Second substrate 25 includes the first groove 251 and the second groove 252, the second groove 252 opening area is greater than the opening area of the first groove 251, the side wall of the side wall of the first groove 251 and the second groove 252 Constitute frame 21.
S330, the sacrificial layer 210 that covering transmission region 100 and non-transparent region 200 is formed in the first groove 251.
S340, covering transmission region 100 is formed in the second groove 252 of the sacrificial layer 210 far from 25 side of the second substrate With the cantilever beam structure material layer 220 in non-transparent region 200.
S350, piezoelectricity is formed in non-transparent region 200 of the cantilever beam structure material layer 220 far from 25 side of the second substrate Structural material 240.
S360, second point is formed in transmission region 100 of the cantilever beam structure material layer 220 far from 25 side of the second substrate Cloth Bragg mirror 23.
Part piezoelectric structure material layer 240 in S370, the non-transparent region 200 of removal is to form piezoelectric structure 24, removal Part cantilever beam structure material layer 220 in non-transparent region 200 removes sacrificial layer 220 to form cantilever beam structure 22.
S380, the second substrate 25 of removal are located at the part in transmission region 100, to form light hole 253.
S390, the second substrate 25 is formed with the side of the second distributed bragg reflector mirror 23 and the first substrate 12 is formed There is the side of second electrode 16 to integrator.
It illustratively, can will be on the structure that formed on the first substrate 12 and the second substrate 25 in such a way that gold bullion is bonded The structure of formation is docked, to form swept light source as shown in Figure 4.
Note that the above is only a better embodiment of the present invention and the applied technical principle.It will be appreciated by those skilled in the art that The invention is not limited to the specific embodiments described herein, be able to carry out for a person skilled in the art it is various it is apparent variation, It readjusts, be combined with each other and substitutes without departing from protection scope of the present invention.Therefore, although by above embodiments to this Invention is described in further detail, but the present invention is not limited to the above embodiments only, is not departing from present inventive concept In the case of, it can also include more other equivalent embodiments, and the scope of the invention is determined by the scope of the appended claims.

Claims (10)

1. a kind of swept light source, including transmission region and non-transparent region, the non-transparent region surrounds the transmission region, It is characterized in that, comprising:
Successively first electrode, the first substrate, the first distributed bragg reflector mirror, active layer and the second electrode of lamination setting, The second electrode is located at the non-transparent region;
Frame is located at the second electrode far from first one side of substrate, and is located at the second electrode far from the light transmission Region side, the frame surround the second electrode one week;
Cantilever beam structure is fixed on the frame, and the cantilever beam structure includes same layer setting and support membrane interconnected With at least two cantilever beams, the support membrane is located at the transmission region, and the cantilever beam is located at the non-transparent region;
Second distributed bragg reflector mirror is fixed on the support membrane;
Piezoelectric structure is fixed on the cantilever beam.
2. swept light source according to claim 1, which is characterized in that second distributed bragg reflector mirror and institute It states piezoelectric structure and is respectively positioned on the cantilever beam structure far from first one side of substrate.
3. swept light source according to claim 1, which is characterized in that second distributed bragg reflector mirror and institute Piezoelectric structure is stated to be respectively positioned between the cantilever beam structure and first substrate;
The swept light source further includes second substrate opposed with first substrate, second substrate include the first groove and Second groove, second groove is located at the first groove adjacent to the side of first substrate, and the opening of second groove Area is greater than the opening area of first groove, the common structure of side wall of the side wall of first groove and second groove At the frame;Second substrate is provided with light hole in the transmission region.
4. swept light source according to claim 1, which is characterized in that the plan view shape of the frame includes rectangle, described Cantilever beam structure includes four cantilever beams;
One end of each cantilever beam is connected with the midpoint on the side of the rectangle, the other end of each cantilever beam and institute Support membrane is stated to be connected;Alternatively, one end of each cantilever beam is connected with the turning of the rectangle, each cantilever beam The other end be connected with the support membrane.
5. swept light source according to claim 1, which is characterized in that the piezoelectric structure includes the of successively lamination setting Three electrodes, piezoelectric membrane and the 4th electrode.
6. swept light source according to claim 1, which is characterized in that along the direction of vertical first substrate, the branch The thickness for supportting film and the cantilever beam is L, wherein 0.5 μm≤L≤1 μm.
7. a kind of production method of swept light source, the swept light source includes transmission region and non-transparent region, described non-transparent Region surrounds the transmission region, which is characterized in that the production method includes:
Sequentially form first electrode, the first substrate, the first distributed bragg reflector mirror, active layer and the second electricity of lamination setting Pole, the second electrode are located at the non-transparent region;
Frame is formed in the non-transparent region;
The cantilever beam structure being fixedly connected with the frame is formed in the frame side, the cantilever beam structure includes that same layer is set It sets and support membrane interconnected and at least two cantilever beams, the support membrane is located at the transmission region, the cantilever beam position In the non-transparent region;
The second distributed bragg reflector mirror being fixedly connected with the support membrane is formed on the support membrane, and described The piezoelectric structure being fixedly connected with the cantilever beam is formed on cantilever beam.
8. production method according to claim 7, which is characterized in that second distributed bragg reflector mirror and institute It states piezoelectric structure and is respectively positioned on the cantilever beam structure far from first one side of substrate;
The production method includes:
Sequentially form first electrode, the first substrate, the first distributed bragg reflector mirror, active layer and the second electricity of lamination setting Pole, the second electrode are located at the non-transparent region;
It is formed in the second electrode far from first one side of substrate and covers the transmission region and the non-transparent region Sacrificial layer;
It is formed in the sacrificial layer far from first one side of substrate and covers the outstanding of the transmission region and the non-transparent region Arm girder construction material layer;
Piezoelectric structure is formed in the non-transparent region of the cantilever beam structure material layer far from first one side of substrate Material layer;
It is distributed that second is formed in the transmission region of the cantilever beam structure material layer far from first one side of substrate Bragg mirror;
The piezoelectric structure material layer of the part in the non-transparent region is removed to form the piezoelectric structure, is removed described non- The part cantilever beam structure material layer in transmission region is removed in the non-transparent region with forming the cantilever beam structure The part sacrificial layer, to form the frame.
9. production method according to claim 7, which is characterized in that second distributed bragg reflector mirror and institute It states piezoelectric structure and is respectively positioned on the cantilever beam structure far from first one side of substrate;
The production method includes:
Sequentially form first electrode, the first substrate, the first distributed bragg reflector mirror, active layer and the second electricity of lamination setting Pole, the second electrode are located at the non-transparent region;
Second substrate is provided;Second substrate includes the first groove and the second groove, and the opening area of second groove is big In the opening area of first groove, the side wall of the side wall of first groove and second groove constitutes the frame Frame;
The sacrificial layer for covering the transmission region and the non-transparent region is formed in first groove;
It is formed in second groove of the sacrificial layer far from second one side of substrate and covers the transmission region and institute State the cantilever beam structure material layer in non-transparent region;
Piezoelectric structure is formed in the non-transparent region of the cantilever beam structure material layer far from second one side of substrate Material layer;
It is distributed that second is formed in the transmission region of the cantilever beam structure material layer far from second one side of substrate Bragg mirror;
The piezoelectric structure material layer of the part in the non-transparent region is removed to form piezoelectric structure, is removed described non-transparent The part cantilever beam structure material layer in region removes the sacrificial layer to form cantilever beam structure;
The part that second substrate is located in the transmission region is removed, to form light hole;
Second substrate is formed with the side of second distributed bragg reflector mirror and first substrate is formed with The side of second electrode is to integrator.
10. production method according to claim 7, which is characterized in that formed and the support membrane on the support membrane The second distributed bragg reflector mirror being fixedly connected includes:
Third electrode, piezoelectric membrane and the 4th electrode are sequentially formed on the support membrane.
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