CN109585581A - A kind of preparation method of solar battery sheet electrode - Google Patents
A kind of preparation method of solar battery sheet electrode Download PDFInfo
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- CN109585581A CN109585581A CN201811467112.2A CN201811467112A CN109585581A CN 109585581 A CN109585581 A CN 109585581A CN 201811467112 A CN201811467112 A CN 201811467112A CN 109585581 A CN109585581 A CN 109585581A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 35
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 26
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000004544 sputter deposition Methods 0.000 claims abstract description 23
- 238000000151 deposition Methods 0.000 claims abstract description 22
- 239000007788 liquid Substances 0.000 claims abstract description 22
- 230000008021 deposition Effects 0.000 claims abstract description 19
- 239000007789 gas Substances 0.000 claims abstract description 15
- 229910052786 argon Inorganic materials 0.000 claims abstract description 13
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 13
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 10
- 239000010439 graphite Substances 0.000 claims abstract description 10
- 150000004683 dihydrates Chemical class 0.000 claims abstract description 4
- 239000000843 powder Substances 0.000 claims abstract description 4
- 239000012495 reaction gas Substances 0.000 claims abstract description 4
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 claims abstract description 4
- 239000001509 sodium citrate Substances 0.000 claims abstract description 4
- 239000011521 glass Substances 0.000 claims description 14
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 12
- 239000008367 deionised water Substances 0.000 claims description 9
- 229910021641 deionized water Inorganic materials 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- PDYXSJSAMVACOH-UHFFFAOYSA-N [Cu].[Zn].[Sn] Chemical compound [Cu].[Zn].[Sn] PDYXSJSAMVACOH-UHFFFAOYSA-N 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 6
- 238000004070 electrodeposition Methods 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- 239000003708 ampul Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000005352 clarification Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 3
- 229910000366 copper(II) sulfate Inorganic materials 0.000 claims description 3
- 238000003869 coulometry Methods 0.000 claims description 3
- 238000005202 decontamination Methods 0.000 claims description 3
- 230000003588 decontaminative effect Effects 0.000 claims description 3
- 230000009977 dual effect Effects 0.000 claims description 3
- 235000019441 ethanol Nutrition 0.000 claims description 3
- MINVSWONZWKMDC-UHFFFAOYSA-L mercuriooxysulfonyloxymercury Chemical compound [Hg+].[Hg+].[O-]S([O-])(=O)=O MINVSWONZWKMDC-UHFFFAOYSA-L 0.000 claims description 3
- 229910000371 mercury(I) sulfate Inorganic materials 0.000 claims description 3
- 229910021645 metal ion Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- RCIVOBGSMSSVTR-UHFFFAOYSA-L stannous sulfate Chemical compound [SnH2+2].[O-]S([O-])(=O)=O RCIVOBGSMSSVTR-UHFFFAOYSA-L 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- 229910000375 tin(II) sulfate Inorganic materials 0.000 claims description 3
- 238000005303 weighing Methods 0.000 claims description 3
- RNZCSKGULNFAMC-UHFFFAOYSA-L zinc;hydrogen sulfate;hydroxide Chemical compound O.[Zn+2].[O-]S([O-])(=O)=O RNZCSKGULNFAMC-UHFFFAOYSA-L 0.000 claims description 3
- 239000005361 soda-lime glass Substances 0.000 claims 1
- 238000004506 ultrasonic cleaning Methods 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
- 239000002994 raw material Substances 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- VEUACKUBDLVUAC-UHFFFAOYSA-N [Na].[Ca] Chemical compound [Na].[Ca] VEUACKUBDLVUAC-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 238000007599 discharging Methods 0.000 description 1
- 238000010616 electrical installation Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Hybrid Cells (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
The invention discloses a kind of preparation methods of solar battery sheet electrode, the following steps are included: S1, pretreatment: conductive substrates are pre-processed, S2, make flannelette carbon film: using conductive substrates as substrate, substrate surface is covered on the gear film of circular hole sieve with a thickness of 0.1mmol/l~0.3mmol/l, using magnetically controlled DC sputtering mode, using graphite as target, the carbon deposition layer for being 150nm~200nm in substrate covering baffle side deposition thickness, wherein the vacuum degree of sputtering chamber is 3 × 10000~7 × 10000Pa, being filled with argon gas is reaction gas, operating air pressure when deposition is 0.5P, sputtering power is 40W~60W, sputtering time is 40min~60min;After the completion of sputtering, the conductive substrates with flannelette carbon film are obtained, the configuration of S3, electroplate liquid: weigh 50mmol/l Sodium Citrate, usp, Dihydrate Powder first.The preparation method of the solar battery sheet electrode, not only raw material cost performance is high, but also reacts mild, is suitble to universal on a large scale and promotes.
Description
Technical field
The invention belongs to solar battery sheet technical fields, and in particular to a kind of preparation side of solar battery sheet electrode
Method.
Background technique
Solar panel is that solar radiant energy is passed through photoelectric effect or photochemical effect is straight by absorbing sunlight
It connecing or indirect conversion is at the device of electric energy, the main material of most of solar panel is " silicon ", but because cost of manufacture is larger,
So that it is generally used, there are also certain limitations.For common batteries and recyclable rechargeable battery, solar-electricity
Pond belongs to the green product of more energy efficient environmental protection.Solar battery sheet has the electrode for energization, electronics or electrical installation, equipment
One of component, be used as two of input in conducting medium (solid, gas, vacuum or electrolyte solution) or derived current
End.One pole of input current is anode or anode, and a pole of discharging current is cathode or cathode.Electrode has various types, such as yin
Pole, anode, welding electrode, electric furnace electrode etc..But in the prior art, the production of electrode uses noble metal, higher cost mostly.
Therefore it is directed to this status, there is an urgent need to design and produce a kind of preparation method of solar battery sheet electrode,
To meet the needs of actual use.
Summary of the invention
The purpose of the present invention is to provide a kind of preparation methods of solar battery sheet electrode, to solve above-mentioned background skill
The problem of being proposed in art.
To achieve the above object, the invention provides the following technical scheme: a kind of preparation side of solar battery sheet electrode
Method, comprising the following steps:
S1, pretreatment: conductive substrates are pre-processed;
S2, production flannelette carbon film: using conductive substrates as substrate, circular hole is had with a thickness of 0.1mmol/l~0.3mmol/l
The gear film of shape sieve is covered on substrate surface, using magnetically controlled DC sputtering mode, using graphite as target, covers baffle one in substrate
Side deposition thickness is the carbon deposition layer of 150nm~200nm, and wherein the vacuum degree of sputtering chamber is 3 × 10000~7 × 10000Pa,
Being filled with argon gas is reaction gas, and operating air pressure when deposition is 0.5P, and sputtering power is 40W~60W, sputtering time be 40min~
60min;After the completion of sputtering, the conductive substrates with flannelette carbon film are obtained;
The configuration of S3, electroplate liquid: weighing 50mmol/l Sodium Citrate, usp, Dihydrate Powder first, and deionized water is added and stirs to dissolve
Uniformly, clear transparent solutions are obtained, then sequentially add 3.5mmol/l cupric sulfate pentahydrate, 20mmol/l monohydrate zinc sulphate and
2.1mmol/l stannous sulfate is sufficiently stirred and makes it dissolve uniformly, clarification blue plating solution of the acquisition containing three metal ion species, i.e., and three
First copper zinc-tin electroplate liquid;
S4, electrochemical deposition: the Ternary copper zinc-tin electroplate liquid of preparation is added in electrolytic cell, with pretreated conductive liner
Bottom as working electrode, using Mercurous sulfate electrode as reference electrode, using polishing stainless steel piece as to electrode, constitute three electrodes
System;Electrochemical deposition is carried out using coulometry when potentiometer, it is to be deposited to finish, copper indium selenide prefabricated membrane is taken out, deionized water is used
It is dried up after flushing;
S5, selenization: gained copper indium selenide prefabricated membrane is placed in dual temperature area tube type resistance furnace, using argon gas as protection
Atmosphere guarantees to be negative pressure relative to external pressure in quartz ampoule to be -0.06MPa;Underlayer temperature is 350~450 DEG C, selenium powder institute
It is 175~225 DEG C in warm area, is heat-treated 30~60min, after being cooled to room temperature, the product for obtaining black is solar battery
The electrode of piece.
Preferably, conductive substrates is are cut by the pretreated operation, be respectively placed in decontamination liquid, acetone, ethyl alcohol,
It is cleaned by ultrasonic 10~30min in deionized water, depositional area is controlled at 1*3 square centimeters, is subsequently placed at ultraviolet and ozone cleaning
Machine handles 20min, saves backup.
Preferably, the circular hole spacing of the baffle of the circular hole sieve is 3 μm~5 μm, and Circularhole diameter is 10 μm~30 μm,
The material of the gear film is plastics.
Preferably, the conductive substrates are set as the sodium calcium glass of FTO electro-conductive glass, ITO electro-conductive glass and surface sputtering molybdenum
Any one in glass, and the thickness of conductive substrates is set as 3-5 millimeters.
Preferably, argon gas before the use, is bubbled 10min to electroplate liquid through glass tube by the electroplate liquid, molten to exclude
Oxygen in liquid.
Preferably, described to be deposited as constant pressure depositional mode, the current potential of the deposition is set as 50V-60V, and the time of deposition is
10~60min, depositing temperature are 25 DEG C.
Preferably, the selenium powder is set as high-purity selenium powder, and purity >=95%, and the dosage of the selenium powder is set as
2mmol/l。
Preferably, the graphite is set as high purity graphite, and purity >=99.99%, and the purity of the argon gas is
99.99%.
Technical effect and advantage of the invention: the preparation method of the solar battery sheet electrode, the conductive substrates of setting
Material is set as glass, not only conducts electricity very well, but also preferably obtains, cheap, reduces the great number cost using noble metal,
And conductive substrates are provided with flannelette carbon film, so that electric conductivity is stronger, enhance the working efficiency of battery, use Ternary copper zinc-tin
For electroplate liquid as electroplate liquid, the cost performance of chemical plating is high, and when deposition, reaction is mild, the system of the solar battery sheet electrode
Preparation Method, not only raw material cost performance is high, but also reacts mild, is suitble to universal on a large scale and promotes.
Specific embodiment
Below in conjunction with the content of present invention, the technical solution in the content of present invention is clearly and completely described, is shown
So, described content is only a part of content of the present invention, rather than whole contents.Based on the content in the present invention, originally
Field those of ordinary skill every other content obtained without making creative work, belongs to guarantor of the present invention
The range of shield.
The present invention provides a kind of solar battery sheet electrode preparation method, comprising the following steps:
S1, pretreatment: conductive substrates are pre-processed;
S2, production flannelette carbon film: using conductive substrates as substrate, circular hole is had with a thickness of 0.1mmol/l~0.3mmol/l
The gear film of shape sieve is covered on substrate surface, using magnetically controlled DC sputtering mode, using graphite as target, covers baffle one in substrate
Side deposition thickness is the carbon deposition layer of 150nm~200nm, and wherein the vacuum degree of sputtering chamber is 3 × 10000~7 × 10000Pa,
Being filled with argon gas is reaction gas, and operating air pressure when deposition is 0.5P, and sputtering power is 40W~60W, sputtering time be 40min~
60min;After the completion of sputtering, the conductive substrates with flannelette carbon film are obtained;
The configuration of S3, electroplate liquid: weighing 50mmol/l Sodium Citrate, usp, Dihydrate Powder first, and deionized water is added and stirs to dissolve
Uniformly, clear transparent solutions are obtained, then sequentially add 3.5mmol/l cupric sulfate pentahydrate, 20mmol/l monohydrate zinc sulphate and
2.1mmol/l stannous sulfate is sufficiently stirred and makes it dissolve uniformly, clarification blue plating solution of the acquisition containing three metal ion species, i.e., and three
First copper zinc-tin electroplate liquid;
S4, electrochemical deposition: the Ternary copper zinc-tin electroplate liquid of preparation is added in electrolytic cell, with pretreated conductive liner
Bottom as working electrode, using Mercurous sulfate electrode as reference electrode, using polishing stainless steel piece as to electrode, constitute three electrodes
System;Electrochemical deposition is carried out using coulometry when potentiometer, it is to be deposited to finish, copper indium selenide prefabricated membrane is taken out, deionized water is used
It is dried up after flushing;
S5, selenization: gained copper indium selenide prefabricated membrane is placed in dual temperature area tube type resistance furnace, using argon gas as protection
Atmosphere guarantees to be negative pressure relative to external pressure in quartz ampoule to be -0.06MPa;Underlayer temperature is 350~450 DEG C, selenium powder institute
It is 175~225 DEG C in warm area, is heat-treated 30~60min, after being cooled to room temperature, the product for obtaining black is solar battery
The electrode of piece.
Specifically, the pretreated operation to cut conductive substrates, be respectively placed in decontamination liquid, acetone, ethyl alcohol,
It is cleaned by ultrasonic 10~30min in deionized water, depositional area is controlled at 1*3 square centimeters, is subsequently placed at ultraviolet and ozone cleaning
Machine handles 20min, saves backup.
Specifically, the circular hole spacing of the baffle of the circular hole sieve is 3 μm~5 μm, Circularhole diameter is 10 μm~30 μm,
The material of the gear film is plastics.
Specifically, the conductive substrates are set as the sodium calcium glass of FTO electro-conductive glass, ITO electro-conductive glass and surface sputtering molybdenum
Any one in glass, and the thickness of conductive substrates is set as 3-5 millimeters.
Specifically, the electroplate liquid is before the use, argon gas is bubbled 10min to electroplate liquid through glass tube, it is molten to exclude
Oxygen in liquid.
Specifically, described be deposited as constant pressure depositional mode, the current potential of the deposition is set as 50V-60V, and the time of deposition is
10~60min, depositing temperature are 25 DEG C.
Specifically, the selenium powder is set as high-purity selenium powder, and purity >=95%, the dosage of the selenium powder is set as
2mmol/l。
Specifically, the graphite is set as high purity graphite, and purity >=99.99%, the purity of the argon gas is
99.99%.
Finally, it should be noted that being not intended to restrict the invention the foregoing is merely preferred content of the invention, to the greatest extent
Invention is explained in detail referring to foregoing teachings for pipe, for those skilled in the art, still can be right
Technical solution documented by aforementioned each content is modified or equivalent replacement of some of the technical features, all at this
Within the spirit and principle of invention, any modification, equivalent replacement, improvement and so on should be included in protection model of the invention
Within enclosing.
Claims (8)
1. a kind of preparation method of solar battery sheet electrode, which comprises the following steps:
S1, pretreatment: conductive substrates are pre-processed;
S2, production flannelette carbon film: it using conductive substrates as substrate, is sieved with a thickness of 0.1mmol/l~0.3mmol/l with circular hole
The gear film of net is covered on substrate surface, heavy in substrate covering baffle side using graphite as target using magnetically controlled DC sputtering mode
Product is with a thickness of the carbon deposition layer of 150nm~200nm, and wherein the vacuum degree of sputtering chamber is 3 × 10000~7 × 10000Pa, is filled with
Argon gas is reaction gas, and operating air pressure when deposition is 0.5P, and sputtering power is 40W~60W, sputtering time be 40min~
60min;After the completion of sputtering, the conductive substrates with flannelette carbon film are obtained;
The configuration of S3, electroplate liquid: weighing 50mmol/l Sodium Citrate, usp, Dihydrate Powder first, and deionized water is added and stirs to dissolve
It is even, obtain clear transparent solutions, then sequentially add 3.5mmol/l cupric sulfate pentahydrate, 20mmol/l monohydrate zinc sulphate and
2.1mmol/l stannous sulfate is sufficiently stirred and makes it dissolve uniformly, clarification blue plating solution of the acquisition containing three metal ion species, i.e., and three
First copper zinc-tin electroplate liquid;
S4, electrochemical deposition: the Ternary copper zinc-tin electroplate liquid of preparation is added in electrolytic cell, with pretreated conductive substrates work
For working electrode, using Mercurous sulfate electrode as reference electrode, using polishing stainless steel piece as to electrode, constitute three electrode systems
System;Electrochemical deposition is carried out using coulometry when potentiometer, it is to be deposited to finish, copper indium selenide prefabricated membrane is taken out, is rushed with deionized water
It is dried up after washing;
S5, selenization: gained copper indium selenide prefabricated membrane is placed in dual temperature area tube type resistance furnace, using argon gas as protection gas
Atmosphere guarantees to be negative pressure relative to external pressure in quartz ampoule to be -0.06MPa;Underlayer temperature is 350~450 DEG C, where selenium powder
Warm area is 175~225 DEG C, is heat-treated 30~60min, after being cooled to room temperature, the product for obtaining black is solar battery sheet
Electrode.
2. a kind of preparation method of solar battery sheet electrode according to claim 1, it is characterised in that: the pre- place
The operation of reason is to cut conductive substrates, be respectively placed in decontamination liquid, acetone, ethyl alcohol, ultrasonic cleaning 10 in deionized water~
30min, depositional area are controlled at 1*3 square centimeters, are subsequently placed at ultraviolet and ozone cleaning machine processing 20min, are saved backup.
3. a kind of preparation method of solar battery sheet electrode according to claim 1, it is characterised in that: the circular hole
The circular hole spacing of the baffle of shape sieve is 3 μm~5 μm, and Circularhole diameter is 10 μm~30 μm, and the material of the gear film is plastics.
4. a kind of preparation method of solar battery sheet electrode according to claim 1, it is characterised in that: the conduction
Substrate is set as any one in the soda-lime glass of FTO electro-conductive glass, ITO electro-conductive glass and surface sputtering molybdenum, and conductive liner
The thickness at bottom is set as 3-5 millimeters.
5. a kind of preparation method of solar battery sheet electrode according to claim 1, it is characterised in that: the plating solution
Before the use, argon gas is bubbled 10min to electroplate liquid through glass tube, to exclude the oxygen in solution.
6. a kind of preparation method of solar battery sheet electrode according to claim 1, it is characterised in that: the deposition
For constant pressure depositional mode, the current potential of the deposition is set as 50V-60V, and the time of deposition is 10~60min, depositing temperature 25
℃。
7. a kind of preparation method of solar battery sheet electrode according to claim 1, it is characterised in that: the selenium powder
It is set as high-purity selenium powder, and purity >=95%, the dosage of the selenium powder is set as 2mmol/l.
8. a kind of preparation method of solar battery sheet electrode according to claim 1, it is characterised in that: the graphite
It is set as high purity graphite, and purity >=99.99%, the purity of the argon gas is 99.99%.
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5380371A (en) * | 1991-08-30 | 1995-01-10 | Canon Kabushiki Kaisha | Photoelectric conversion element and fabrication method thereof |
CN104120467A (en) * | 2014-07-23 | 2014-10-29 | 陕西师范大学 | Copper-zinc-tin film material with controllable components, copper-zinc-tin sulfenyl solar battery and preparation method of the two |
CN104465111A (en) * | 2014-11-29 | 2015-03-25 | 辽宁工业大学 | Preparing method for photo-anode of dye-sensitized solar cell |
CN107818871A (en) * | 2017-10-26 | 2018-03-20 | 江苏财经职业技术学院 | A kind of preparation method of DSSC to electrode |
CN107887168A (en) * | 2017-11-09 | 2018-04-06 | 合肥工业大学 | A kind of preparation method of CIS for quantum dot sensitized solar cell to electrode |
-
2018
- 2018-12-03 CN CN201811467112.2A patent/CN109585581A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5380371A (en) * | 1991-08-30 | 1995-01-10 | Canon Kabushiki Kaisha | Photoelectric conversion element and fabrication method thereof |
CN104120467A (en) * | 2014-07-23 | 2014-10-29 | 陕西师范大学 | Copper-zinc-tin film material with controllable components, copper-zinc-tin sulfenyl solar battery and preparation method of the two |
CN104465111A (en) * | 2014-11-29 | 2015-03-25 | 辽宁工业大学 | Preparing method for photo-anode of dye-sensitized solar cell |
CN107818871A (en) * | 2017-10-26 | 2018-03-20 | 江苏财经职业技术学院 | A kind of preparation method of DSSC to electrode |
CN107887168A (en) * | 2017-11-09 | 2018-04-06 | 合肥工业大学 | A kind of preparation method of CIS for quantum dot sensitized solar cell to electrode |
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