CN109585282B - Source and drain electrode ion implantation method and implantation system - Google Patents
Source and drain electrode ion implantation method and implantation system Download PDFInfo
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- 238000005468 ion implantation Methods 0.000 title claims abstract description 239
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- 238000002513 implantation Methods 0.000 title claims abstract description 84
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Abstract
The invention discloses a source drain ion implantation method and an implantation system, wherein the implantation method comprises the following steps: establishing a machine and a work in process information table; under the condition that the next processing procedure of the current batch of wafers is a procedure of executing source/drain ion implantation, searching an ion implantation machine which can adopt a continuous implantation procedure to carry out source/drain ion implantation on the wafers; setting the found ion implantation machine, and integrating the layered implantation processes into a continuous implantation process; forming a first dispatching list according to the found ion implantation machine and the wafer to be subjected to the source and drain ion implantation process; correspondingly distributing the wafers to the ion implantation machine according to the first dispatching list; and the ion implantation machine carries out source and drain ion implantation on the wafer according to the continuous implantation procedure. The invention completes the ion implantation process of forming the N trap in the same ion implantation machine, realizes the continuous implantation of the source and the drain, reduces the generation of wafer defects and reduces the yield loss.
Description
Technical Field
The present invention relates to the field of integrated circuit manufacturing, and in particular, to a source/drain ion implantation method and an implantation system.
Background
Semiconductor manufacturing processes involve hundreds of detailed and complex processes that must be skillfully coordinated according to strict manufacturing schedules. The semiconductor manufacturing process may include a photolithography process, an etching process, a deposition process, a polishing process, a rapid thermal processing process, an implantation process, an annealing process, and the like. Thus, special equipment is required to perform the above-described processes according to well-defined manufacturing rules.
With the scale of semiconductor production, the demand for automation is higher and higher, and Manufacturing Execution System (MES) is in the process. The MES is a management system software that is used to track production progress, inventory, job progress, and other information flows associated with the management of operations in and out of the plant, running on a host computer. Namely, MES is a system for managing and executing the above-defined manufacturing rules.
Due to different manufacturing processes of different semiconductors, the processing time period is different, and the delivery date is different. In order to manufacture high quality products, there are strict time intervals between certain manufacturing processes, that is, when one process is completed, another process must be completed within a certain time. Those skilled in the art will refer to this particular set Time as the set queue Time or maximum wait Time (Q-Time).
Ion implantation techniques provide greater control over the doping process than diffusion, while also providing additional advantages. There is no lateral diffusion during ion implantation, the process is performed at near room temperature, and impurity atoms are placed under the wafer surface, enabling a wide concentration range of doping, in addition to which the doping concentration and junction depth can be independently controlled. Therefore, ion implantation technology plays an important role in semiconductor manufacturing technology.
In the semiconductor manufacturing process, the ion implantation technology is used many times, and in some critical levels, one kind of ions are implanted many times continuously to meet the requirements of the device.
For the ion implantation process, about 36 ion implantations are typically performed to generate ions from the ion source, which are then implanted into the corresponding portion of the wafer through the acceleration tube. Here, in a semiconductor manufacturing line, each facility determines an incomplete wafer product, referred to simply as a Work In Process (WIP). The implanted ions include As, P, B, C, Ge, BF2, F, etc. For an ion implantation process to form an N-well within a device, the process should be a sequential implantation sequence.
In the ion implantation process, as the implantation source species comprise F and BF2, the interval between the F implantation and the BF2 implantation cannot be too long, if the interval is long, the implanted BF2 or F overflows to the surface of the wafer to generate F-extraction, so that bulges are generated on the surface of the wafer, and the product yield is influenced.
When ion implantation is performed on a wafer, a wafer conveying system conveys the wafer to each ion implantation machine allocated by the MES system in batches (lots), usually, a lot includes 25 wafers, and when a lot of wafers are conveyed to the corresponding ion implantation machine, the ion implantation machine is provided with a vacuum lock (load lock), and a buffer container (buffer) is provided inside the vacuum lock for sequentially storing the lots of wafers and confirming that the lots of wafers actually perform the entire ion implantation process and processing steps in a batch manner. The temporary storage box is generally used to hold and store all or part of the wafers in sequence, and provide the wafers to the ion implanter chamber in a single wafer manner. The ion implanter is generally capable of temporarily storing 4 wafers in a temporary storage box.
It can be known from the above that, three elements Ge, BF2 and F need to be implanted successively to form an N well, for a single wafer, firstly, the MES system detects the wafer and finds that it needs to perform a process flow for forming an N well, then the MES system allocates an ion implantation machine with a Ge source for ion implantation, then the MES system controls the ion implantation machine with the Ge source to take out the wafer and allocate it to the ion implantation machine with a BF2 source for ion implantation, then the MES system controls the ion implantation machine with the BF2 source to take out the wafer and allocate it to the ion implantation machine with the F source for ion implantation, after implantation is completed, the MES system controls the ion implantation machine with the BF2 source to take out the wafer and transport it to a station for the next process through the wafer transport system, the ion implantation step for forming the N well is referred to as a step implantation step.
However, when the ion implantation is actually performed on the wafer, N ion implantation machines in the semiconductor manufacturing factory are all in a working state, so after the implantation of BF2 element is performed on the wafer, there is a maximum waiting time, i.e., Q-time, before the wafer enters the next ion implantation machine for F implantation, since the wafers to be processed are processed in batches, when the implantation of the wafer in the previous batch is not completed, the wafer in the next batch to be implanted with F needs to wait, and when the waiting time exceeds Q-time, the F element overflows the surface of the wafer when the implantation of the F element is performed on the wafer again, so that dense bulges are formed on the surface of the wafer, which causes the defects of the subsequent wafer to be too high, and finally affects the yield of the product, even the product is scrapped, and causes yield loss.
Therefore, a source/drain ion implantation method and an implantation system are needed to solve the above problems.
Disclosure of Invention
The invention aims to provide a source/drain ion implantation method and a source/drain ion implantation system, wherein the source/drain ion implantation method is used for controlling the ion implantation process for forming an N well to be completed in the same ion implantation machine, so as to solve the problem that when the waiting time of a wafer waiting for the completion of F ion implantation machine operation exceeds Q-time, after F ion implantation is performed on the wafer, the implanted F element overflows the surface of the wafer, so that the defect of a subsequent product is too high, the product is scrapped, and the yield is lost.
In order to solve the problems, the invention is realized by the following technical scheme:
a source drain ion implantation method, comprising: establishing a machine and a work in process information table; under the condition that the next processing procedure of the current batch of wafers is a procedure of executing source/drain ion implantation, searching an ion implantation machine which can adopt a continuous implantation procedure to carry out source/drain ion implantation on the wafers; setting the found ion implantation machine, and integrating the layered implantation processes into a continuous implantation process; forming a first dispatching list according to the found ion implantation machine and the wafer to be subjected to the source and drain ion implantation process; correspondingly distributing the wafers to the ion implantation machine according to the first dispatching list; and the ion implantation machine carries out source and drain ion implantation on the wafer according to the continuous implantation procedure.
Further, when the source/drain ion implantation is a process of forming an N well region by lightly doping a drain ion implantation, the continuous implantation process includes the following steps:
s7.1, the ion implantation machine performs Ge ion implantation on one wafer to be implanted, and other wafers in the same batch are stored in a vacuum lock of the ion implantation machine;
s7.2, after the Ge ion implantation process of the wafer is finished, taking out the wafer and putting the wafer into a vacuum lock for storage, conveying a next single wafer to be implanted into a plasma implantation machine for Ge ion implantation, and repeating the steps S7.1-S7.2 until all wafers of the batch are implanted with Ge ions in the ion implantation machine;
s7.3, setting the ion implantation machine, switching the Ge ion source of the ion implantation machine to a BF2 source, and sequentially performing BF2 ion implantation on the batch of wafers until the wafers of the batch are implanted with BF2 ions in the ion implantation machine;
and S7.4, setting an ion implantation machine, switching the BF2 ion source of the ion implantation machine to an F source, and sequentially performing F ion implantation on the batch of wafers until the batch of wafers are implanted with F ions in the ion implantation machine.
Further, the machine information table defines all ion implantation machines suitable for automatic dispatching from machine to machine, and the machine information table records types of all ion implantation machines, machine numbers and cargo platform number information corresponding to each machine; the work-in-process information table defines all wafers suitable for automatic dispatching from machine to machine, and the number of all wafers, the wafer batch number, the wafer number and the processing procedure information are recorded in the work-in-process information table.
Further, the table has a forbidden list recording the numbers of ion implantation stations that can be used for implanting one or two elements of Ge, BF2 and F.
Further, the ion implanter capable of performing the continuous implantation process satisfies the following conditions: an ion implanter station not present in the forbidden list and of the type medium beam ion implanter station.
Further, the method also comprises the following steps: when the ion implanter which can execute the continuous implantation process is not found, the ion implanter is searched again.
Further, the method also comprises the following steps: when an ion implanter station capable of performing a continuous implantation process is not found, the following operations are performed: searching an ion implantation machine capable of executing a hierarchical implantation procedure; forming a second dispatching list according to the found ion implantation machine and the wafer to be subjected to the source and drain ion implantation process; correspondingly distributing the wafers to an ion implantation machine for executing the hierarchical implantation procedure according to the second dispatching list; and the ion implanter performs ion implantation on the wafer according to the hierarchical implantation procedure.
Further, the ion implanter capable of performing the hierarchical implantation process satisfies the following conditions: the ion implanter stations in the forbidden list are of the type of medium beam current ion implanter station.
In another aspect, a source drain ion implantation system includes: the information management unit is used for storing an ion implantation machine information table and a work-in-process information table; the dispatching information processing unit is used for analyzing the ion implantation machine information in the ion implantation machine information table and the wafer information in the product information table stored in the information management unit, and searching an ion implantation machine which can perform source and drain ion implantation on the wafer by adopting a continuous implantation procedure and a wafer which performs source and drain ion implantation in the next processing procedure; a program integration unit for integrating the preset hierarchical injection procedures in the MES system into continuous injection procedures according to the search result of the dispatching information processing unit; and the dispatching output unit is used for generating a dispatching list according to the searching result of the dispatching information processing unit and carrying out dispatching operation. And the program control unit is used for controlling an ion implantation machine which can adopt a continuous implantation procedure to carry out source and drain ion implantation on the wafer, so that the ion implantation machine carries out ion implantation on the wafer in the continuous implantation procedure.
Further, the table has a forbidden list recording the numbers of ion implantation stations that can be used for implanting one or two elements of Ge, BF2 and F.
Compared with the prior art, the invention has the following advantages:
according to the invention, the ion implantation process for forming the N well is completed in the same ion implantation machine through the source and drain ion implantation control, so that the continuous implantation of the source and drain is realized, the generation of wafer defects is reduced, and the yield loss is reduced. The method and the device avoid the problems that when the wafer is subjected to ion implantation by adopting a layered implantation process, the waiting time after the F ion implantation machine operation is finished exceeds the Q-time, and then after the F ion implantation is carried out on the wafer exceeding the Q-time, the implanted F ions overflow the surface of the wafer, so that the subsequent products have over-high defects, and the yield loss is caused by scrapping the products.
Drawings
Fig. 1 is a schematic flow chart of a source-drain ion implantation method provided in an embodiment of the present invention;
FIG. 2 is a schematic flow chart of a single-machine continuous ion implantation process according to an embodiment of the present invention;
fig. 3 is a block diagram of a source-drain ion implantation system according to an embodiment of the present invention.
Detailed Description
The present invention will now be described in more detail with reference to the accompanying drawings, in which a preferred embodiment of the invention is shown, it being understood that one skilled in the art may modify the invention herein described while still achieving the advantageous results of the invention. Accordingly, the following description should be construed as broadly as possible to those skilled in the art and not as limiting the invention.
In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. It will of course be appreciated that in the development of any such actual embodiment, numerous implementation-specific details must be set forth in order to achieve the developer's specific goals, such as compliance with system-related and business-related constraints, which will vary from one implementation to another. Moreover, it will be appreciated that such a development effort might be complex and time-consuming, but would nevertheless be a routine undertaking for those of ordinary skill in the art.
In order to make the objects and features of the present invention more comprehensible, embodiments of the present invention are described in detail below with reference to the accompanying drawings. It is to be noted that the drawings are in a very simplified form and employ non-precise ratios for the purpose of facilitating and distinctly facilitating the description of one embodiment of the present invention.
As shown in fig. 1, the source/drain ion implantation method provided in this embodiment includes the following processes: step S1, establish the machine and the work in process information table. The machine information table defines all ion implantation machines suitable for automatic dispatching from machine to machine, and records the types of all ion implantation machines, machine numbers, cargo platform numbers corresponding to all machines, and the like. The work in process information table defines all wafers suitable for automatic dispatching from machine to machine, and records the information of the number of all wafers, the wafer batch number, the wafer number, the processing procedure and the like in the work in process information table. In this embodiment, the equipment information table further includes a forbidden list, which records the number of the ion implantation equipment that can be used for implanting one or two elements.
In step S2, when the next processing step of the current lot of wafers is a step of performing source/drain ion implantation, an ion implanter capable of performing the above steps is found.
There are three main types of conventional production-type ion implantation machines: a low-energy large-beam implanter, a high-energy implanter, and a medium-beam implanter, as shown in table 1:
table 1 shows the types of ion implanter
As can be seen from table 1, for a low energy high beam current ion implanter: the beam current can reach several milliamperes or even dozens of milliamperes, and the implantation dosage range is 1013～1016cm-2. The energy is lower than 100keV, and as the feature size of the device is continuously reduced, lower energy implantation is required to form shallow junctions or ultra-shallow junctions, and the minimum energy of an implantation machine with a large beam current can reach 0.2 keV.
For a high-energy ion implantation machine: the energy of the high-energy implanter can reach several MeV, and the implantation dosage is 1011～1013cm-2。
For a medium beam ion implantation machine: the injection energy of the medium beam current injection machine is in a range of hundreds of keV, and the injection dosage range is larger than that of the high-energy injection machine.
The continuous implantation process is a processing process for completing the steps of source and drain implantation in the same ion implantation machine.
Specifically, in the present embodiment, taking the formation of the N-well region in the wafer as an example, since the formation of the N-well region requires the continuous implantation of three elements, i.e., Ge, BF2 and F, the ion implanter capable of performing the continuous implantation process needs to satisfy the following conditions: the ion implantation machines not in the forbidden list are of the type of medium beam current ion implantation machine.
The specific searching process is to analyze and compare the machine information table and the forbidden list, and the ion implantation machine which is not in the forbidden list and is recorded in the machine information table and of which the machine type is a medium beam ion implantation machine is the ion implantation machine capable of executing the continuous implantation process.
And S3, judging whether the search is successful, if so, entering the step S5, and if not, returning to the step S3 and/or entering the step S9.
Specifically, if the ion implanter satisfying the above condition is found, the step S5 is performed for the search success, and if the ion implanter satisfying the above condition is not found, the step S9 is performed for the search failure, or the step S3 may be performed to find the ion implanter capable of performing the continuous implantation process again.
Step S4, an ion implanter capable of performing the above-mentioned sequential implantation processes is set up, and the sequential implantation processes are integrated into the hierarchical implantation process.
Step S5, a first dispatch list is formed according to the found ion implantation tool and the wafer to be subjected to the source/drain ion implantation process.
Step S6, correspondingly allocating the wafer to an ion implantation machine for performing a continuous implantation process according to the first dispatch list. Specifically, the wafers are distributed to the corresponding ion implantation machines in batches.
Step S7, the ion implanter performs ion implantation on the wafer according to the continuous implantation procedure.
Specifically, the step S8 further includes the following processes:
and S7.1, the ion implantation machine performs Ge ion implantation on one wafer in the batch to be implanted, and other wafers in the same batch are stored in a vacuum lock of the ion implantation machine.
And S7.2, after the Ge ion implantation process of the wafer is finished, taking out the wafer and putting the wafer into a vacuum lock for storage, conveying the next wafer into a plasma implantation machine for Ge ion implantation, and repeating the steps S7.1-S7.2 until the wafers of the batch are implanted with Ge ions in the ion implantation machine.
And S7.3, setting the ion implantation machine, switching the Ge source of the ion implantation machine to a BF2 source, and sequentially carrying out BF2 ion implantation on the wafers implanted with the Ge ions until the wafers of the batch are implanted with BF2 ions in the ion implantation machine. Specifically, the ion implanter performs BF2 ion implantation on one wafer of the batch to be implanted, and other wafers of the same batch are stored in the vacuum lock of the ion implanter. And (4) after the BF2 ion implantation process of the wafer is finished, taking out the wafer and placing the wafer into a vacuum lock for storage, conveying the next wafer into a plasma implantation machine for BF2 ion implantation, and repeating the step S7.3 until the wafers of the batch are implanted with BF2 ions in the ion implantation machine.
And S7.4, setting the ion implantation machine, switching the BF2 source of the ion implantation machine to an F source, and sequentially performing F ion implantation on the wafers implanted with the BF2 ions until the wafers of the batch are implanted with the F ions in the ion implantation machine. Specifically, the ion implanter performs F ion implantation on one wafer of a batch of wafers to be implanted, and other wafers of the same batch are stored in the vacuum lock of the ion implanter. And (4) after the F ion implantation process of the wafer is finished, taking out the wafer and placing the wafer into a vacuum lock for storage, conveying the next wafer in the batch into a plasma implantation machine for F ion implantation, and repeating the step (S7.4) until the wafers in the batch are implanted with the F ions in the ion implantation machine. And forming N wells on the wafers of the batch to finish the source and drain injection process.
The ion implantation process for forming the N well is controlled to be completed in the same ion implantation machine through a source and drain ion implantation method, so that continuous implantation of the source and the drain is realized, the generation of wafer defects is reduced, and the yield loss is reduced. The method and the device avoid the problems that when the wafer is subjected to ion implantation by adopting a layered implantation process, the waiting time after the F ion implantation machine operation is finished exceeds the Q-time, and then after the F ion implantation is carried out on the wafer exceeding the Q-time, the implanted F ions overflow the surface of the wafer, so that the subsequent products have over-high defects, and the yield loss is caused by scrapping the products.
As can be seen from the above, when an ion implanter station that can perform a continuous implantation process is not found, step S9 may be performed in order not to delay production.
Step S8, finding an ion implanter capable of performing a hierarchical implantation process. Specifically, an ion implantation machine capable of implanting germanium ions in the forbidden list may be selected first, and the type of the ion implantation machine is a medium beam ion implantation machine. And finally, selecting an ion implantation machine which is positioned in the forbidden list and can implant BF2 ions for the wafer implanted with the germanium ions and is of a medium beam current ion implantation machine type, and selecting an ion implantation machine which is positioned in the forbidden list and can implant F ions for the wafer implanted with BF2 ions and is of a medium beam current ion implantation machine type.
In step S9, a second dispatch list is formed according to the found ion implanter and the wafer to be subjected to the source/drain ion implantation process.
Step S10, correspondingly allocating the wafer to an ion implanter performing a hierarchical implantation process according to the second dispatch list.
Step S11, the ion implanter performs ion implantation on the batch of wafers according to the hierarchical implantation procedure.
Specifically, the step S11 includes the following steps: and carrying out Ge ion implantation on the batch of wafers in an ion implantation machine with a Ge source, carrying out Ge ion implantation on one wafer in the batch of wafers by the ion implantation machine, and storing other wafers in the same batch in a vacuum lock of the ion implantation machine. And repeating the process until the batch of wafers are subjected to germanium ion implantation.
And then, the MES system controls the ion implantation machine of the Ge source to take out the wafers of the batches and distributes the wafers to the ion implantation machine with the BF2 source for ion implantation, then the MES system controls the ion implantation machine of the BF2 source to take out the wafers and distributes the wafers to the ion implantation machine with the F source for ion implantation, and after the implantation is finished, the MES system controls the ion implantation machine of the BF2 source to take out the wafers and convey the wafers to a station for the next process through a wafer conveying system.
Based on the source/drain ion implantation method, the invention also discloses a source/drain ion implantation system, as shown in fig. 3, the implantation system comprises:
the information management unit is used for storing an ion implantation machine information table and a work-in-process information table;
and the dispatching information processing unit is used for analyzing the ion implantation machine information in the ion implantation machine information table and the wafer information in the product information table stored in the information management unit, and searching the ion implantation machine which can perform source and drain ion implantation on the wafer by adopting a continuous implantation process and the wafer which performs source and drain ion implantation in the next processing process.
And a program integration (merge) unit for integrating the preset hierarchical injection procedures in the MES system into continuous injection procedures according to the search result of the dispatching information processing unit.
And the dispatching output unit is used for generating a dispatching list according to the searching result of the dispatching information processing unit and carrying out dispatching operation.
And the program control unit is used for controlling an ion implantation machine which can adopt a continuous implantation procedure to carry out source and drain ion implantation on the wafer, so that the ion implantation machine carries out ion implantation on the wafer in the continuous implantation procedure.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (10)
1. A source drain ion implantation method, comprising:
establishing a machine and a work in process information table;
under the condition that the next processing procedure of the current batch of wafers is a procedure of executing source/drain ion implantation, searching an ion implantation machine platform capable of adopting a continuous implantation procedure to carry out source/drain ion implantation on the wafers;
setting the found ion implantation machine, and integrating the layered implantation processes into a continuous implantation process;
forming a first dispatching list according to the found ion implantation machine and the wafer to be subjected to the source and drain ion implantation process;
correspondingly distributing the wafers to the ion implantation machine according to the first dispatching list; and
and the ion implantation machine performs source and drain ion implantation on the wafer according to the continuous implantation procedure.
2. The source-drain ion implantation method of claim 1, wherein when said source-drain ion implantation step is a process of forming an N well region by performing lightly doped ion implantation on said source-drain,
the continuous injection process comprises the following processes:
s7.1, the ion implantation machine performs Ge ion implantation on one wafer to be implanted, and other wafers in the same batch are stored in a vacuum lock of the ion implantation machine;
s7.2, after the Ge ion implantation process of the wafer is finished, taking out the wafer and putting the wafer into a vacuum lock for storage, conveying a next single wafer to be implanted into a plasma implantation machine for Ge ion implantation, and repeating the steps S7.1-S7.2 until all wafers of the batch are implanted with Ge ions in the ion implantation machine;
s7.3, setting the ion implantation machine, switching the Ge ion source of the ion implantation machine to a BF2 source, and sequentially performing BF2 ion implantation on the batch of wafers until the wafers of the batch are implanted with BF2 ions in the ion implantation machine;
and S7.4, setting an ion implantation machine, switching the BF2 ion source of the ion implantation machine to an F source, and sequentially performing F ion implantation on the batch of wafers until the batch of wafers are implanted with F ions in the ion implantation machine.
3. The source-drain ion implantation method as claimed in claim 2,
the machine information table defines all ion implantation machines suitable for automatic dispatching from machine to machine, and records types of all ion implantation machines, machine numbers and cargo carrying platform number information corresponding to each machine;
the work-in-process information table defines all wafers suitable for automatic dispatching from machine to machine, and the number of all wafers, the wafer batch number, the wafer number and the processing procedure information are recorded in the work-in-process information table.
4. The source-drain ion implantation method according to claim 3, wherein the table information table has a forbidden list recording numbers of ion implantation tables that can be used for implanting one or two elements of Ge, BF2, and F.
5. The source-drain ion implantation method of claim 4, wherein the ion implanter capable of performing the continuous implantation process satisfies the following conditions: an ion implanter station not present in the forbidden list and of the type medium beam ion implanter station.
6. The source-drain ion implantation method of claim 1, further comprising the process of: when the ion implanter which can execute the continuous implantation process is not found, the ion implanter is searched again.
7. The source-drain ion implantation method according to claim 4, further comprising the process of: when an ion implanter station capable of performing a continuous implantation process is not found, the following operations are performed:
searching an ion implantation machine capable of executing a hierarchical implantation procedure;
forming a second dispatching list according to the found ion implantation machine and the wafer to be subjected to the source and drain ion implantation process;
correspondingly distributing the wafers to an ion implantation machine for executing the hierarchical implantation procedure according to the second dispatching list;
and the ion implanter performs ion implantation on the wafer according to the hierarchical implantation procedure.
8. The source-drain ion implantation method of claim 7, wherein the ion implanter capable of performing a hierarchical implantation process satisfies the following conditions: the ion implanter stations in the forbidden list are of the type of medium beam current ion implanter station.
9. A source drain ion implantation system, comprising:
the information management unit is used for storing an ion implantation machine information table and a work-in-process information table;
the dispatching information processing unit is used for analyzing the ion implantation machine information in the ion implantation machine information table and the wafer information in the product information table stored in the information management unit, and searching an ion implantation machine capable of performing source and drain ion implantation on the wafer by adopting a continuous implantation process and a wafer for performing source and drain ion implantation in the next processing process;
a program integration unit for integrating the preset hierarchical injection procedures in the manufacturing execution system into continuous injection procedures according to the search result of the dispatching information processing unit;
the dispatching output unit is used for generating a dispatching list according to the searching result of the dispatching information processing unit and carrying out dispatching operation;
and the program control unit is used for controlling an ion implantation machine which can adopt a continuous implantation procedure to carry out source/drain ion implantation on the wafer, so that the ion implantation machine carries out ion implantation on the wafer in the continuous implantation procedure.
10. The source-drain ion implantation system of claim 9,
the table of station information has a forbidden list that records the number of ion implantation stations that can be used to implant one or two elements of Ge, BF2, and F.
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