CN109561876A - Ultrasonic transducer and its manufacturing method - Google Patents
Ultrasonic transducer and its manufacturing method Download PDFInfo
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- CN109561876A CN109561876A CN201880002105.7A CN201880002105A CN109561876A CN 109561876 A CN109561876 A CN 109561876A CN 201880002105 A CN201880002105 A CN 201880002105A CN 109561876 A CN109561876 A CN 109561876A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 26
- 239000004411 aluminium Substances 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 16
- 239000010949 copper Substances 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 16
- 239000004332 silver Substances 0.000 claims description 16
- 229910052709 silver Inorganic materials 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 238000001459 lithography Methods 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 238000007740 vapor deposition Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 230000005496 eutectics Effects 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 239000007772 electrode material Substances 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 191
- 238000010586 diagram Methods 0.000 description 34
- 238000003860 storage Methods 0.000 description 14
- 238000004891 communication Methods 0.000 description 3
- 238000002604 ultrasonography Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005686 electrostatic field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005055 memory storage Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910018459 Al—Ge Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 208000002925 dental caries Diseases 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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Classifications
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
- A61B8/4483—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
-
- G—PHYSICS
- G10—MUSICAL INSTRUMENTS; ACOUSTICS
- G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
- G10K11/00—Methods or devices for transmitting, conducting or directing sound in general; Methods or devices for protecting against, or for damping, noise or other acoustic waves in general
- G10K11/02—Mechanical acoustic impedances; Impedance matching, e.g. by horns; Acoustic resonators
-
- G—PHYSICS
- G10—MUSICAL INSTRUMENTS; ACOUSTICS
- G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
- G10K9/00—Devices in which sound is produced by vibrating a diaphragm or analogous element, e.g. fog horns, vehicle hooters or buzzers
- G10K9/12—Devices in which sound is produced by vibrating a diaphragm or analogous element, e.g. fog horns, vehicle hooters or buzzers electrically operated
- G10K9/122—Devices in which sound is produced by vibrating a diaphragm or analogous element, e.g. fog horns, vehicle hooters or buzzers electrically operated using piezoelectric driving means
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- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Multimedia (AREA)
- Life Sciences & Earth Sciences (AREA)
- Acoustics & Sound (AREA)
- Pathology (AREA)
- General Health & Medical Sciences (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Biomedical Technology (AREA)
- Heart & Thoracic Surgery (AREA)
- Medical Informatics (AREA)
- Molecular Biology (AREA)
- Surgery (AREA)
- Animal Behavior & Ethology (AREA)
- Radiology & Medical Imaging (AREA)
- Public Health (AREA)
- Veterinary Medicine (AREA)
- Biophysics (AREA)
- Gynecology & Obstetrics (AREA)
- Human Computer Interaction (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Transducers For Ultrasonic Waves (AREA)
- Ultra Sonic Daignosis Equipment (AREA)
Abstract
The present invention provides a kind of ultrasonic transducer and its manufacturing method.The ultrasonic transducer, comprising: substrate (106), the lower electrode (105), supporting block (103), vibrating diaphragm layer (102), top electrode (101) being cascading；Wherein, it is arranged fluted in the one side of the close vibrating diaphragm layer (102) of the substrate (106), the lower electrode (105) is filled in the groove；Space between the vibrating diaphragm layer (102) and the substrate (106) is separated into closed cavity (104) by the supporting block (103), and the cavity (104) is corresponding with the position of the lower electrode (105).To realize the array of lower electrode so that gage system is simpler, convenient for ultrasonic transducer array element transmitting and reception be independently controlled.
Description
Technical field
This application involves ultrasonic imaging technique field more particularly to a kind of ultrasonic transducer and its manufacturing methods.
Background technique
With the development of biological identification technology, bio-identification chip is equipped in more and more terminals.And micromechanics is super
Sonic transducer (capacitive micromachined urtrosonic transducer, CMUT) is relatively conventional biology
Then identification sensor is collected ultrasonic wave and is being pressed by actively emitting high frequency sound wave across the surface of screen arrival organism
The echo of intermediate pressure section is formed to skin characteristic image, is finally compared the image of skin characteristic image and storage, is completed to refer to
The functions such as line identification, In vivo detection.
Current supersonic changer element generally includes flexible substrates set gradually, lower electrode, etching sacrificial layer, organic
Then polymeric support layer, organic polymer vibration film and top electrode are realized by the array control to top electrode
To the independent control of ultrasonic transducer array element.
But this mode needs for top electrode to connect with the integrated circuit on wafer by external lead, when powering on
When number of poles is more, the quantity of lead also can accordingly increase；To increase the quantity and wiring difficulty of external lead.When outer
Set number of leads it is more when, also transmitting to ultrasonic transducer array element and control can be received bring inconvenience.
Summary of the invention
The present invention provides a kind of ultrasonic transducer and its manufacturing method, the array of lower electrode is realized, so that drawing
Line mode is simpler, convenient for ultrasonic transducer array element transmitting and reception be independently controlled.
In a first aspect, the present invention provides a kind of ultrasonic transducer, comprising: substrate, the lower electrode, support being cascading
Block, vibrating diaphragm layer, top electrode；Wherein, it is arranged fluted in the one side of the close vibrating diaphragm layer of the substrate, the lower electrode is filled in
In the groove；Space between the vibrating diaphragm layer and the substrate is separated into closed cavity by the supporting block, and described
Cavity is corresponding with the position of the lower electrode.
Optionally, described to power on the conductive layer being extremely deposited in the vibrating diaphragm layer, the conductive layer it is micro- with a thickness of 0.6
Rice；The material of the conductive layer includes: any one of aluminium, copper, silver.
Optionally, the material of the vibrating diaphragm layer includes: nitride or oxide；The thickness of the vibrating diaphragm layer are as follows: 0.5
Micron.
Optionally, the quantity of the groove is 2 or more, is filled with lower electrode in each groove.
Optionally, the quantity of the cavity is 2 or more, the position pair of each cavity and at least one lower electrode
It answers.
Optionally, the material of the lower electrode includes: any one of aluminium, copper, silver.
Optionally, the substrate is Silicon Wafer, is provided with control circuit on the Silicon Wafer, the control circuit with it is described
Lower electrode electrical connection, the top electrode ground connection.
Second aspect, the embodiment of the present invention provides a kind of manufacturing method of ultrasonic transducer, for making in first aspect
Described in any item ultrasonic transducers；The described method includes:
Top electrode is deposited on the first substrate；
Vibrating diaphragm layer is deposited in the top electrode；
The depositing support layer in the vibrating diaphragm layer, and processing is patterned to the supporting layer, obtain corresponding support
Block；
Groove is opened up on the first surface of the second substrate；
Metal layer is filled in the groove, and the metal layer constitutes lower electrode and bonding region；
The bonding region of the first surface of second substrate is bonded with the supporting block；
The first substrate is removed, the ultrasonic transducer is obtained.
Optionally, described to power on extremely whole face electrode, the material of the top electrode includes: any one of aluminium, copper, silver.
Optionally, vibrating diaphragm layer is deposited in the top electrode, comprising:
The silicon nitride layer of preset thickness is deposited in top electrode, the silicon nitride layer constitutes the vibrating diaphragm layer；Depositional mode
It include: chemical vapor deposition, vapor deposition, sputtering.
Optionally, groove is opened up on the first surface of the second substrate, comprising:
Multiple grooves are opened up on the first surface of the second substrate by lithography and etching technique.
Optionally, lower electrode is filled in the groove, comprising:
Be powered plating or sputtering process, fills metal layer in the groove, and the metal layer constitutes lower electrode and bonding
Area, the material of the metal layer include: any one of aluminium, copper, silver.
Optionally, the bonding region of the first surface of second substrate is bonded with the supporting block, comprising:
The metal layer of the bonding region of second substrate and the supporting block are formed into eutectic bonding.
The third aspect, the embodiment of the present invention provides a kind of manufacturing method of ultrasonic transducer, for making in first aspect
Described in any item ultrasonic transducers；The described method includes:
Groove is opened up on the first surface of the wafer of integrated circuit；
Metal layer is filled in the groove, and the metal layer constitutes lower electrode；
The depositing support layer on the first surface and metal layer of the wafer；
Groove is opened up on the supporting layer, and fills sacrificial layer in the groove；
Vibrating diaphragm layer is deposited on supporting layer and sacrificial layer；
Top electrode is deposited in the vibrating diaphragm layer；
Production runs through top electrode, vibrating diaphragm layer, and reaches the relief hole of sacrificial layer；
By the relief hole, sacrificial layer is removed using wet processing, to generate cavity；
The metallization medium layer in the top electrode, to form closed cavity.
Optionally, groove is opened up on the first surface of the wafer of integrated circuit, comprising:
Groove is opened up on first surface by the wafer of lithography and etching process integrated circuits.
Optionally, vibrating diaphragm layer is deposited on supporting layer and sacrificial layer, comprising:
The silicon nitride layer of preset thickness is deposited on supporting layer and sacrificial layer, the silicon nitride layer constitutes the vibrating diaphragm layer；
Depositional mode includes: chemical vapor deposition, vapor deposition, sputtering.
Optionally, described to power on extremely whole face electrode, the material of the top electrode includes: any one of aluminium, copper, silver.
Optionally, production runs through top electrode, vibrating diaphragm layer, and reaches the relief hole of sacrificial layer, comprising:
Run through top electrode, vibrating diaphragm layer by the production of lithography and etching technique, and reaches the relief hole of sacrificial layer.
Fourth aspect, the present invention provide a kind of manufacturing equipment of ultrasonic transducer, comprising:
Memory, for storing program；
Processor, for executing the described program of memory storage, when described program is performed, the processor
For executing any method in second aspect or the third aspect.
5th aspect, the present invention provide a kind of computer readable storage medium, comprising: instruction, when it is transported on computers
When row, so that computer executes any method in second aspect or the third aspect.
Ultrasonic transducer provided by the invention and its manufacturing method pass through substrate, the lower electrode, support being cascading
Block, vibrating diaphragm layer, top electrode；Wherein, it is arranged fluted in the one side of the close vibrating diaphragm layer of the substrate, the lower electrode is filled in
In the groove；Space between the vibrating diaphragm layer and the substrate is separated into closed cavity by the supporting block, and described
Cavity is corresponding with the position of the lower electrode.To realize the array of lower electrode, so that gage system is simpler, just
In to ultrasonic transducer array element transmitting and reception be independently controlled.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is this hair
Bright some embodiments for those of ordinary skill in the art without any creative labor, can be with
It obtains other drawings based on these drawings.
Fig. 1 is the structural schematic diagram for the application scenarios that the embodiment of the present invention one provides；
Fig. 2 is the structural schematic diagram for the ultrasonic transducer that the embodiment of the present invention one provides；
Fig. 3 is the flow diagram of the production method of ultrasonic transducer provided by Embodiment 2 of the present invention；
Fig. 4 is the structural schematic diagram for successively making top electrode and vibrating diaphragm layer on the first substrate；
Fig. 5 is the structural schematic diagram that supporting layer is made in vibrating diaphragm layer；
Fig. 6 is that the structural schematic diagram after groove is opened up on the first surface of the second substrate；
Fig. 7 is that the structural schematic diagram after metal layer is filled in groove；
Fig. 8 is the structural schematic diagram after the bonding region of the first surface of the second substrate is bonded with supporting block；
Fig. 9 is the structural schematic diagram of the ultrasonic transducer to complete；
Figure 10 is the flow diagram of the production method for the ultrasonic transducer that the embodiment of the present invention three provides；
Figure 11 is the structural schematic diagram that groove is opened up on the first surface of the wafer of integrated circuit；
Figure 12 is that the structural schematic diagram after metal layer is filled in groove；
Figure 13 is that the structural schematic diagram after sacrificial layer is filled in the groove of supporting layer；
Figure 14 is that the structural schematic diagram after vibrating diaphragm layer is deposited on supporting layer and sacrificial layer；
Figure 15 is the structural schematic diagram made after relief hole；
Figure 16 is the structural schematic diagram of another ultrasonic transducer to complete；
Figure 17 is the structural schematic diagram of the manufacturing equipment for the ultrasonic transducer that the embodiment of the present invention four provides.
Through the above attached drawings, it has been shown that the specific embodiment of the disclosure will be hereinafter described in more detail.These attached drawings
It is not intended to limit the scope of this disclosure concept by any means with verbal description, but is by referring to specific embodiments
Those skilled in the art illustrate the concept of the disclosure.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
Every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
Description and claims of this specification and term " first ", " second ", " third ", " in above-mentioned attached drawing
The (if present)s such as four " are to be used to distinguish similar objects, without being used to describe a particular order or precedence order.It should manage
The data that solution uses in this way are interchangeable under appropriate circumstances, so that the embodiment of the present invention described herein for example can be to remove
Sequence other than those of illustrating or describe herein is implemented.In addition, term " includes " and " having " and theirs is any
Deformation, it is intended that cover it is non-exclusive include, for example, containing the process, method of a series of steps or units, system, production
Product or equipment those of are not necessarily limited to be clearly listed step or unit, but may include be not clearly listed or for this
A little process, methods, the other step or units of product or equipment inherently.
Technical solution of the present invention is described in detail with specifically embodiment below.These specific implementations below
Example can be combined with each other, and the same or similar concept or process may be repeated no more in some embodiments.
Hereinafter, the part term in the application is explained, in order to those skilled in the art understand that.
1) micromachined ultrasonic transducer (capacitive micromachined urtrosonic transducer,
CMUT), it is the micro electro mechanical device that can be mutually converted with electric energy using sound, has many advantages, such as that integrated level is high, sensitivity is good, be production
The ideal component of ultrasonic transducer.Ultrasonic wave both can be converted into electric signal by CMUT, can also convert the electrical signal to ultrasonic wave.
When applying DC voltage between the upper and lower electrodes, vibrating diaphragm layer is pulled to substrate by strong electrostatic field, then again in top electrode
Apply alternating voltage between lower electrode, vibrating diaphragm layer will occur to vibrate and generate ultrasonic wave at this time.On the contrary, in top electrode under
After applying DC offset voltage appropriate between electrode, vibrating diaphragm layer is vibrated under ultrasonic wave effect, between two electrode plates
Capacitor changes, and the reception of ultrasonic wave is realized by detecting this variation.
Fig. 1 is the structural schematic diagram for the application scenarios that the embodiment of the present invention one provides, as shown in Figure 1, ultrasonic transducer can
To apply in fingerprint recognition field.The second surface of the substrate 106 of ultrasonic transducer 100 is arranged on backer board 201, and ultrasound is changed
Matching layer 202 can be provided in the top electrode 101 of device 100；Screen layer 203 is provided on matching layer 202.When finger skin 204
When contacting with screen layer 203, ultrasonic transducer 100 emits ultrasonic wave, after ultrasonic wave sequentially passes through matching layer 202, screen layer 203
Reach finger skin 204.Due to the surface irregularity of finger skin 204, using the part of protrusion as ridge region 2041, will be recessed
Sunken part is as paddy region 2042.Matching layer 202 can be designed as single layer or multilayered structure, for enhancing the saturating of ultrasonic wave
Cross rate.Specifically, when the ultrasonic wave that ultrasonic transducer 100 emits reaches ridge region 2041, since the acoustic impedance of skin is smaller,
Therefore ultrasonic wave is easily through skin, therefore the echo signal intensity formed is weaker.When the ultrasound that ultrasonic transducer 100 emits
When wave reaches paddy region 2042, since there are gaps between skin and screen layer 203, acoustic impedance is larger, and what is formed returns
Wave signal strength is stronger.Based on the above principles, it can use sound wave in the power of the echo-signal of skin surface, the echo of formation
Image, so as to completely reflect the characteristic information of skin surface.Finally, by by the characteristic information of skin surface and in advance
The skin characteristic information of storage compares, and achievees the purpose that bio-identification.
How to be solved with technical solution of the specifically embodiment to technical solution of the present invention and the application below above-mentioned
Technical problem is described in detail.These specific embodiments can be combined with each other below, for the same or similar concept
Or process may repeat no more in certain embodiments.Below in conjunction with attached drawing, the embodiment of the present invention is described.
Fig. 2 is the structural schematic diagram for the ultrasonic transducer that the embodiment of the present invention one provides, as shown in Fig. 2, in the present embodiment
Ultrasonic transducer may include: the substrate 106 being cascading, lower electrode 105, supporting block 103, vibrating diaphragm layer 102, power on
Pole 101；Wherein, it is arranged fluted in the one side of the close vibrating diaphragm layer 102 of substrate 106, lower electrode 105 is filled in groove；Branch
Space between vibrating diaphragm layer 102 and substrate 106 is separated into closed cavity 104, and cavity 104 and lower electrode 105 by bracer 103
Position it is corresponding.
In a kind of optional embodiment, top electrode 101 is the conductive layer being deposited in vibrating diaphragm layer 102, conductive layer
With a thickness of 0.6 micron；The material of conductive layer includes: any one of aluminium, copper, silver.
In the present embodiment, the specific thickness of conductive layer is not limited, and those skilled in the art can carry out according to actual needs
Adjustment setting.Specifically, it can be deposited in top electrode 101 using any mode in chemical vapor deposition, vapor deposition, sputtering
Conductive layer.
In the present embodiment, when applying DC voltage between top electrode 101 and lower electrode 105, strong electrostatic field is by vibrating diaphragm
Layer 102 pulls to substrate, then applies alternating voltage between top electrode 101 and lower electrode 105 again, vibrating diaphragm layer 102 will at this time
Vibration occurs and generates ultrasonic wave.On the contrary, after applying DC offset voltage appropriate between top electrode 101 and lower electrode 105,
Vibrating diaphragm layer 102 is vibrated under ultrasonic wave effect, and the capacitor between top electrode 101 and lower electrode 105 changes at this time, is led to
It crosses and detects the reception that ultrasonic wave is realized in this variation.
In a kind of optional embodiment, substrate 106 can be silicon-based substrate, be provided with integrated control in silicon-based substrate
Circuit processed, integrated control circuit are electrically connected with lower electrode 105, and top electrode 101 is grounded.Optionally, in the present embodiment, lower electrode
105 can be used as anode, and top electrode 101 can be used as cathode.In actual use, since top electrode 101 is whole face electrode, because
Top electrode 101 is grounded by this, is independently controlled by control circuit to lower electrode 105, is changed so as to form multiple ultrasounds
It can device array element structure.This mode can simplify pin configuration, the integrated and wiring of convenience for ultrasonic energy converter.
In a kind of optional embodiment, the material of vibrating diaphragm layer 102 includes: nitride or oxide；Vibrating diaphragm layer
Thickness are as follows: 0.5 micron.
In the present embodiment, vibrating diaphragm layer can be made of Si3N4 material, the thickness of vibrating diaphragm layer is to determine to emit and receive sound
Therefore the important parameter of the resonant frequency of wave can be configured according to practical situations.Not specific limit in the present embodiment
It is fixed.
In a kind of optional embodiment, the quantity of groove is 2 or more, is filled with lower electrode in each groove
105.The material of lower electrode includes: any one of aluminium, copper, silver.
In a kind of optional embodiment, the quantity of cavity 104 is 2 or more, under each cavity and at least one
The position of electrode 105 is corresponding.
In the present embodiment, the position of cavity 104 is corresponding with the position of lower electrode 105, when cavity 104 is multiple, accordingly
Lower electrode 105 also to be multiple.Referring to fig. 2, setting is there are three groove on substrate 106, not to filling metal material in groove,
To form lower electrode 105.Supporting block 103 is used between vibrating diaphragm layer 102 and substrate 106 by vibrating diaphragm layer 102 and substrate 106
Between space be divided into multiple closed cavitys 104.Cavity 104 is to provide gap to the vibration of vibrating diaphragm layer 102.
The present embodiment passes through the substrate, lower electrode, supporting block, vibrating diaphragm layer, top electrode being cascading；Wherein, substrate
Close vibrating diaphragm layer one side on be arranged fluted, lower electrode is filled in groove；Supporting block will be between vibrating diaphragm layer and substrate
Space is separated into closed cavity, and cavity is corresponding with the position of lower electrode.To realize the array of lower electrode, so that
Gage system is simpler, convenient for ultrasonic transducer array element transmitting and reception be independently controlled.
Fig. 3 is the flow diagram of the production method of ultrasonic transducer provided by Embodiment 2 of the present invention, as shown in figure 3,
Method in the present embodiment may include:
S301, top electrode is deposited on the first substrate.
In the present embodiment, extremely whole face electrode is powered on, the material of top electrode includes: any one of aluminium, copper, silver.
S302, vibrating diaphragm layer is deposited in top electrode.
In the present embodiment, the silicon nitride layer of preset thickness can be deposited in top electrode, silicon nitride layer constitutes vibrating diaphragm layer.It can
The material of selection of land, vibrating diaphragm layer can also be oxide；The thickness of vibrating diaphragm layer are as follows: 0.5 micron.
It is alternatively possible to make vibrating diaphragm layer using Si3N4 material, the thickness of vibrating diaphragm layer is to determine to emit and receive sound wave
Therefore the important parameter of resonant frequency can be configured according to practical situations.It is not specific in the present embodiment to limit.
Fig. 4 is the structural schematic diagram for successively making top electrode and vibrating diaphragm layer on the first substrate；As shown in figure 4, existing first
Top electrode 502 and vibrating diaphragm layer 503 are deposited on first substrate 501, then the depositing support layer 504 in vibrating diaphragm layer 503.Specifically,
Conductive layer can be deposited using any mode in chemical vapor deposition, vapor deposition, sputtering on the first substrate.
S303, the depositing support layer in vibrating diaphragm layer, and processing is patterned to supporting layer, obtain corresponding supporting block.
In the present embodiment, it can be deposited in vibrating diaphragm layer by any mode in chemical vapor deposition, vapor deposition, sputtering
Supporting layer, the material of supporting layer can be the material for being easy to generate bonding structure, such as Ge.It is possible to further using photoetching,
Etching technics forms the shape of supporting block on supporting layer.
Fig. 5 is the structural schematic diagram that supporting layer is made in vibrating diaphragm layer, as shown in figure 5, supporting block 5041 is located at vibrating diaphragm layer
On 503, the shape of supporting block 5041 can be matrix, polygon etc..
S304, groove is opened up on the first surface of the second substrate.
In the present embodiment, multiple grooves can be opened up on the first surface of the second substrate by lithography and etching technique.
Fig. 6 is that the structural schematic diagram after groove is opened up on the first surface of the second substrate, as shown in fig. 6, can be in the second substrate 505
First surface on open up three grooves 506.
S305, metal layer is filled in groove, metal layer constitutes lower electrode and bonding region.
Fig. 7 is that the structural schematic diagram after metal layer is filled in groove, and referring to Fig. 6, Fig. 7, can be powered plating or sputter
Technique fills metal layer in groove 506, and metal layer constitutes lower electrode 5071 and bonding region 5072, the material of metal layer include:
Any one of aluminium, copper, silver.
S306, the bonding region of the first surface of the second substrate is bonded with supporting block.
Fig. 8 is the structural schematic diagram after the bonding region of the first surface of the second substrate is bonded with supporting block, as shown in figure 8,
The metal layer of the bonding region 5072 of second substrate and supporting block 504 are formed into eutectic bonding.For example, when metal layer uses aluminium AL,
When supporting block uses Ge, Al-Ge eutectic bonding can be formed.
S307, the first substrate of removal, obtain ultrasonic transducer.
In the present embodiment, the first substrate 501 in Fig. 8 can be removed with etching technics, to obtain ultrasonic transducer.Fig. 9
For the structural schematic diagram of the ultrasonic transducer to complete.
The present embodiment, by depositing top electrode on the first substrate；Vibrating diaphragm layer is deposited in top electrode；It sinks in vibrating diaphragm layer
Product supporting layer, and processing is patterned to supporting layer, obtain corresponding supporting block；It is opened up on the first surface of the second substrate
Groove；Metal layer is filled in groove, metal layer constitutes lower electrode and bonding region；By the bonding region of the first surface of the second substrate
It is bonded with supporting block；The first substrate is removed, ultrasonic transducer is obtained.To realize the array of lower electrode, so that lead side
Formula is simpler, convenient for ultrasonic transducer array element transmitting and reception be independently controlled.
Figure 10 is the flow diagram of the production method for the ultrasonic transducer that the embodiment of the present invention three provides, such as Figure 10 institute
Show, the method in the present embodiment may include:
S401, groove is opened up on the first surface of the wafer of integrated circuit.
Figure 11 be the structural schematic diagram of groove is opened up on the first surface of the wafer of integrated circuit as shown in figure 11 can
To pass through the recessing on the first surface of the wafer 601 of integrated circuit of lithography and etching technique.
S402, metal layer is filled in groove, metal layer constitutes lower electrode.
In the present embodiment, can be powered plating or sputtering process, and metal layer 602 is filled in groove, and metal layer 602 is constituted
Lower electrode, the material of metal layer 602 include: any one of aluminium, copper, silver.Figure 12 is that the knot after metal layer is filled in groove
Structure schematic diagram.
S403, the depositing support layer on the first surface and metal layer of wafer.
S404, groove is opened up on supporting layer, and sacrificial layer is filled in groove.
Figure 13 is that the structural schematic diagram after filling sacrificial layer in the groove of supporting layer can pass through light as shown in figure 13
It carves and etching technics opens up groove on supporting layer 603, sacrificial layer 604 is then filled in groove, the material of sacrificial layer 604 can
To be silica or polycrystalline silicon material.
S405, vibrating diaphragm layer is deposited on supporting layer and sacrificial layer.
Figure 14 is that the structural schematic diagram after depositing vibrating diaphragm layer on supporting layer and sacrificial layer can prop up as shown in figure 14
The silicon nitride layer that preset thickness is deposited on layer 603 and sacrificial layer 604 is supportted, silicon nitride layer constitutes vibrating diaphragm layer 605.Optionally, vibrating diaphragm
The material of layer 605 can also be oxide；The thickness of vibrating diaphragm layer are as follows: 0.5 micron.It is alternatively possible to be made of Si3N4 material
Vibrating diaphragm layer, the thickness of vibrating diaphragm layer are that the important parameter for the resonant frequency for determining transmitting and receiving sound wave therefore can be according to reality
Applicable cases are configured.It is not specific in the present embodiment to limit.
S406, top electrode is deposited in vibrating diaphragm layer.
In the present embodiment, it can be deposited in vibrating diaphragm layer by any mode in chemical vapor deposition, vapor deposition, sputtering
Top electrode, powers on extremely whole face electrode, and the material of top electrode includes: any one of aluminium, copper, silver.
S407, production run through top electrode, vibrating diaphragm layer, and reach the relief hole of sacrificial layer.
Figure 15 is the structural schematic diagram made after relief hole, and as shown in figure 15, relief hole 607 runs through top electrode 606, vibrating diaphragm
Layer 605, and reach sacrificial layer 604.It is alternatively possible to run through top electrode 606, vibrating diaphragm layer by the production of lithography and etching technique
605, and reach the relief hole 607 of sacrificial layer 604.
S408, pass through relief hole, sacrificial layer is removed using wet processing, to generate cavity.
Referring to Figure 15, sacrificial layer is removed using wet processing on the basis of Figure 15, to generate cavity.
S409, the metallization medium layer in top electrode, to form closed cavity.
Figure 16 is that the structural schematic diagram of another ultrasonic transducer to complete deposits in top electrode 606 as shown in figure 16
There is dielectric layer 608, dielectric layer 608 is used for sealing cavity 609.
The present embodiment, by opening up groove on the first surface of the wafer of integrated circuit；Metal layer is filled in groove,
Metal layer constitutes lower electrode；The depositing support layer on the first surface and metal layer of wafer；Open up groove on supporting layer, and
Sacrificial layer is filled in groove；Vibrating diaphragm layer is deposited on supporting layer and sacrificial layer；Top electrode is deposited in vibrating diaphragm layer；Production is through upper
Electrode, vibrating diaphragm layer, and reach the relief hole of sacrificial layer；By relief hole, sacrificial layer is removed using wet processing, to generate sky
Chamber；The metallization medium layer in top electrode finally obtains ultrasonic transducer to form closed cavity.To realize lower electrode
Array so that gage system is simpler, convenient for ultrasonic transducer array element transmitting and reception be independently controlled.
Figure 17 is the structural schematic diagram of the manufacturing equipment for the ultrasonic transducer that the embodiment of the present invention four provides, such as Figure 17 institute
Show, the manufacturing equipment 70 of the ultrasonic transducer in the present embodiment includes:
Processor 71 and memory 72；Wherein:
Memory 72, for storing executable instruction, which can also be flash (flash memory).
Processor 71, for executing the executable instruction of memory storage, to realize in method that above-described embodiment is related to
Each step.It specifically may refer to the associated description in previous methods embodiment.
Optionally, memory 72 can also be integrated with processor 71 either independent.
When device except memory 72 is independently of processor 71, the manufacturing equipment 70 of ultrasonic transducer can also be wrapped
It includes:
Bus 73, for connecting memory 72 and processor 71.
In addition, the embodiment of the present application also provides a kind of computer readable storage medium, deposited in computer readable storage medium
Computer executed instructions are contained, when at least one processor of user equipment executes the computer executed instructions, user equipment
Execute above-mentioned various possible methods.
Wherein, computer-readable medium includes computer storage media and communication media, and wherein communication media includes being convenient for
From a place to any medium of another place transmission computer program.Storage medium can be general or specialized computer
Any usable medium that can be accessed.A kind of illustrative storage medium is coupled to processor, to enable a processor to from this
Read information, and information can be written to the storage medium.Certainly, storage medium is also possible to the composition portion of processor
Point.Pocessor and storage media can be located in application specific integrated circuit (ASIC).In addition, the application specific integrated circuit can
To be located in user equipment.Certainly, pocessor and storage media can also be used as discrete assembly and be present in communication equipment.
Those of ordinary skill in the art will appreciate that: realize that all or part of the steps of above-mentioned each method embodiment can lead to
The relevant hardware of program instruction is crossed to complete.Program above-mentioned can be stored in a computer readable storage medium.The journey
When being executed, execution includes the steps that above-mentioned each method embodiment to sequence；And storage medium above-mentioned includes: read-only memory
(ROM), the various media that can store program code such as random access memory (RAM), magnetic or disk.
Those skilled in the art after considering the specification and implementing the invention disclosed here, will readily occur to its of the disclosure
Its embodiment.The present invention is directed to cover any variations, uses, or adaptations of the disclosure, these modifications, purposes or
Person's adaptive change follows the general principles of this disclosure and including the undocumented common knowledge in the art of the disclosure
Or conventional techniques.The description and examples are only to be considered as illustrative, and the true scope and spirit of the disclosure are by following
Claims are pointed out.
It should be understood that the present disclosure is not limited to the precise structures that have been described above and shown in the drawings, and
And various modifications and changes may be made without departing from the scope thereof.The scope of the present disclosure is only limited by appended claims
System.
Claims (18)
1. a kind of ultrasonic transducer characterized by comprising substrate (106), the lower electrode (105), support being cascading
Block (103), vibrating diaphragm layer (102), top electrode (101)；Wherein, it is set in the one side of the close vibrating diaphragm layer (102) of the substrate (106)
It is equipped with groove, the lower electrode (105) is filled in the groove；The supporting block (103) is by the vibrating diaphragm layer (102) and institute
It states the space between substrate (106) to be separated into closed cavity (104), and the cavity (104) and the lower electrode (105)
Position is corresponding.
2. ultrasonic transducer according to claim 1, which is characterized in that the top electrode (101) is to be deposited on the vibration
Conductive layer in film layer (102), the material of the conductive layer include: any one of aluminium, copper, silver.
3. ultrasonic transducer according to claim 1, which is characterized in that the material of the vibrating diaphragm layer (102) includes: nitridation
Object or oxide.
4. ultrasonic transducer according to claim 1, which is characterized in that the quantity of the groove is 2 or more, each
Lower electrode (105) are filled in groove.
5. ultrasonic transducer according to claim 4, which is characterized in that the quantity of the cavity (104) be 2 and with
On, each cavity is corresponding with the position of lower electrode (105) described at least one.
6. ultrasonic transducer according to claim 1, which is characterized in that the material of the lower electrode includes: aluminium, copper, silver
Any one of.
7. ultrasonic transducer according to claim 1 to 6, which is characterized in that the substrate (106) is silicon wafer
It is round, it is provided with control circuit on the Silicon Wafer, the control circuit is electrically connected with the lower electrode (105), the top electrode
(101) it is grounded.
8. a kind of manufacturing method of ultrasonic transducer, which is characterized in that of any of claims 1-7 super for making
Sonic transducer；The described method includes:
Top electrode is deposited on the first substrate；
Vibrating diaphragm layer is deposited in the top electrode；
The depositing support layer in the vibrating diaphragm layer, and processing is patterned to the supporting layer, obtain corresponding supporting block；
Groove is opened up on the first surface of the second substrate；
Metal layer is filled in the groove, and the metal layer constitutes lower electrode and bonding region；
The bonding region of the first surface of second substrate is bonded with the supporting block；
The first substrate is removed, the ultrasonic transducer is obtained.
9. according to the method described in claim 8, it is characterized in that, described power on extremely whole face electrode, the material of the top electrode
Material includes: any one of aluminium, copper, silver.
10. according to the method described in claim 8, it is characterized in that, depositing vibrating diaphragm layer in the top electrode, comprising:
The silicon nitride layer of preset thickness is deposited in top electrode, the silicon nitride layer constitutes the vibrating diaphragm layer；Depositional mode includes:
Chemical vapor deposition, vapor deposition, sputtering.
11. according to the method described in claim 8, wrapping it is characterized in that, open up groove on the first surface of the second substrate
It includes:
Multiple grooves are opened up on the first surface of the second substrate by lithography and etching technique.
12. according to the described in any item methods of claim 8-11, which is characterized in that fill metal layer in the groove, institute
It states metal layer and constitutes lower electrode and bonding region, comprising:
Be powered plating or sputtering process, fills metal layer in the groove, and the metal layer constitutes lower electrode and bonding region, institute
The material for stating metal layer includes: any one of aluminium, copper, silver.
13. according to the method for claim 12, which is characterized in that by the bonding region of the first surface of second substrate with
The supporting block bonding, comprising:
The metal layer of the bonding region of second substrate and the supporting block are formed into eutectic bonding.
14. a kind of manufacturing method of ultrasonic transducer, which is characterized in that of any of claims 1-7 for making
Ultrasonic transducer；The described method includes:
Groove is opened up on the first surface of the wafer of integrated circuit；
Metal layer is filled in the groove, and the metal layer constitutes lower electrode；
The depositing support layer on the first surface and metal layer of the wafer；
Groove is opened up on the supporting layer, and fills sacrificial layer in the groove；
Vibrating diaphragm layer is deposited on supporting layer and sacrificial layer；
Top electrode is deposited in the vibrating diaphragm layer；
Production runs through top electrode, vibrating diaphragm layer, and reaches the relief hole of sacrificial layer；
By the relief hole, sacrificial layer is removed using wet processing, to generate cavity；
The metallization medium layer in the top electrode, to form closed cavity.
15. according to the method for claim 14, which is characterized in that opened up on the first surface of the wafer of integrated circuit recessed
Slot, comprising:
Groove is opened up on first surface by the wafer of lithography and etching process integrated circuits.
16. according to the method for claim 14, which is characterized in that deposit vibrating diaphragm layer on supporting layer and sacrificial layer, comprising:
The silicon nitride layer of preset thickness is deposited on supporting layer and sacrificial layer, the silicon nitride layer constitutes the vibrating diaphragm layer；Deposition
Mode includes: chemical vapor deposition, vapor deposition, sputtering.
17. according to the method for claim 14, which is characterized in that it is described to power on extremely whole face electrode, the top electrode
Material includes: any one of aluminium, copper, silver.
18. the described in any item methods of 4-17 according to claim 1, which is characterized in that production runs through top electrode, vibrating diaphragm layer, and
Reach the relief hole of sacrificial layer, comprising:
Run through top electrode, vibrating diaphragm layer by the production of lithography and etching technique, and reaches the relief hole of sacrificial layer.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2018/111580 WO2020082256A1 (en) | 2018-10-24 | 2018-10-24 | Ultrasonic transducer and manufacturing method therefor |
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| CN109561876A true CN109561876A (en) | 2019-04-02 |
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| CN201880002105.7A Pending CN109561876A (en) | 2018-10-24 | 2018-10-24 | Ultrasonic transducer and its manufacturing method |
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| WO (1) | WO2020082256A1 (en) |
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