CN109545956A - A kind of regulatable anisotropic magnetoresistive sensor of voltage and preparation method thereof - Google Patents
A kind of regulatable anisotropic magnetoresistive sensor of voltage and preparation method thereof Download PDFInfo
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- CN109545956A CN109545956A CN201811308918.7A CN201811308918A CN109545956A CN 109545956 A CN109545956 A CN 109545956A CN 201811308918 A CN201811308918 A CN 201811308918A CN 109545956 A CN109545956 A CN 109545956A
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Abstract
A kind of regulatable anisotropic magnetoresistive sensor of voltage and preparation method thereof, belongs to spinning electron sensor technical field.The magnetoresistive sensor includes substrate, and is sequentially formed in [nonmagnetic metal oxide film/magnetism regulation layer/magnetic response layer] on substratenPlural layers and non magnetic heavy metal film, wherein n >=1.The regulatable anisotropic magnetoresistive sensor of a kind of voltage provided by the invention is while realizing good sensing characteristics, also there is detection of magnetic field range and magnetoresistive ratio adjustable characteristic simultaneously, can be widely applied to the field of intelligent control such as revolving speed control, angle control, detection of magnetic field and magnetic switch.
Description
Technical field
The invention belongs to spinning electron sensor technical fields, and in particular to a kind of regulatable anisotropic magnetoresistive of voltage
Sensor and preparation method thereof.
Background technique
With the progress of science and technology and the continuous development of informationized society, some traditional industries, such as industry, agriculture
The fields such as industry, information industry start quickly to change the mode to artificial intelligence, precisely operated by manual operation mode.At this point, intelligence
The demand of energy equipment steeply rises, and the demand of intellectual monitoring sensor also increases sharply.Meanwhile the complication of working environment makes
Sensor by more and more disturbing factors, sensor function, which is fixed, can not be regulated and controled, etc. limits the extensive of assembly equipment
Using therefore, finding a kind of adjustable sensor of working condition is particularly important.
Magnetic Sensor based on anisotropic magnetoresistance (AMR) effect relies on its perfect technology, is widely used to vapour
The industrial circles such as vehicle electronics, intelligent control, the life such as number, electric appliance application aspect also have its figure.However, traditional AMR is passed
Sensor be based on have anisotropic magnetic material formed magneto-resistance device, device architecture once it is determined that, detection magnetic field range and
The performance parameters such as magnetoresistive ratio can not be changed, function solidification.
It is currently, there are the regulatable magneto-resistance device of voltage, is utilized " oxide layer/free layer/oxide layer/pinning layer ",
Or tunnel magneto resistance (MTJ) effect in " protective layer/free layer/oxide layer/pinning layer " multi-layer film structure, in applied voltage
Under, the 2p orbital electron hydridization of the oxonium ion of the 3d orbital electron and oxide layer of the magnetic atom of free layer, the magnetic of free layer is each
Anisotropy field changes, and therefore, antiparallel state maintains between the free layer and pinning layer of tunnel knot, and detection of magnetic field section becomes
Change, so that the curvilinear motion of tunneling magnetoresistance.This method has a biggish magnetoresistance, and small volume, but magnetic
The complex process of tunnel junction element, voltage easily puncture tunnel knot, it is caused to be not easily applicable to adjustable magnetic resistance sensor field.This
Outside, there is also the magneto-electric coupled sensor for being based on " magnetosphere/piezoelectric layer ", answering based on magnetospheric magnetostriction and piezoelectric layer
Force coupling action is used, it can be achieved that adjusting of the voltage to magnetosphere anisotropy field size, to adjust the detection of magnetic field model of sensor
It encloses.But these two types of magnetoresistive sensors cannot achieve the regulating and controlling voltage to magnetoresistive ratio, many practical applications are badly in need of magnetic
Resistance change rate can voltage adjust magneto-resistive transducing device.
Summary of the invention
It is an object of the present invention to be proposed a kind of of simple structure and low cost, electric for defect existing for background technique
Regulatable anisotropic magnetoresistive sensor and preparation method thereof is pressed, which has detection of magnetic field range and magneto-resistor
Change rate while adjustable characteristic can be widely applied to the intelligent controls such as revolving speed control, angle control, detection of magnetic field and magnetic switch
Field.
To achieve the above object, The technical solution adopted by the invention is as follows:
A kind of regulatable anisotropic magnetoresistive sensor of voltage, which is characterized in that the magnetoresistive sensor includes substrate,
And it is sequentially formed in [nonmagnetic metal oxide film/magnetism regulation layer/magnetic response layer] on substratenPlural layers
With non magnetic heavy metal film, wherein n >=1.
Further, the material of the nonmagnetic metal oxide film is magnesia (MgO), zinc oxide (ZnO), boron oxide
(B2O3), titanium oxide (TiO2), dysprosia (DyO) or other ion-oxygen compounds etc., for assistant regulating and controlling [magnetism regulation layer/magnetism
Response layer] saturation magnetization；Nonmagnetic metal oxide film with a thickness of 10nm~20 μm.
Further, the material of the magnetic regulation layer and magnetic response layer is permalloy (NiFe), cobalt (Co), ferro-cobalt
(CoFe), ferro-cobalt boron (CoFeB) or nickel cobalt (NiCo) etc.；The magnetic regulation layer and magnetic response layer with a thickness of the μ of 1nm~1
m；Identical or different material and thickness can be selected in the magnetic regulation layer and magnetic response layer.
Further, the non magnetic heavy metal film is strong Quantum geometrical phase material, specially tantalum (Ta), platinum
(Pt), golden (Au), tungsten (W) or Bi2Te3Deng for adjusting the Interface Anisotropy field size of magnetic response layer；A non magnetic huge sum of money
Belong to film with a thickness of 1nm~20nm.
Further, described [nonmagnetic metal oxide film/magnetism regulates and controls layer/magnetic response layer]nRepetition period n
Specific value can be adjusted according to required magnetoresistive ratio size.
In the regulatable anisotropic magnetoresistive sensor of a kind of voltage provided by the invention, magnetism regulation layer and non magnetic gold
The interface for belonging to oxide film occurs oxonium ion migration and oxidation reaction (concentration of oxonium ion can be adjusted by applied voltage) occurs, magnetic
Property regulation layer in atom be oxidized, magnetism regulation layer be in the ferromagnetic ordering of regulating and controlling voltage to the transition stage of antiferromagnetic order
(being reversible by applying the backward voltage process), there are Inter layer exchanges to bias phenomenon with the magnetic response bed boundary, by
" ferromagnetic-ferromagnetic " coupling becomes " Ferromagnetic-Antiferromagnetic " coupling, and the magnetic regulation layer is exchanged with what magnetic response bed boundary generated
Bias-field changes with the variation of applied voltage；Meanwhile under applied voltage, magnetism regulation layer and nonmagnetic metal oxide film
Interface near oxonium ion by electrical field draw so that the 3d orbital electron of magnetic atom and the 2p orbital electron of oxonium ion it
Between hydridization intensity change, the symmetry of the d electron orbit of magnetic atom variation, so that magnetic regulation layer/magnetic response layer film
Magnetic anisotropy field size and coercivity change, and then realize detection of magnetic field range regulation.
Meanwhile the oxidation reaction degree between the magnetic atom and oxonium ion in magnetic regulation layer can be non magnetic by being applied to
The voltage of metal oxide thin films is regulated and controled, so that magnetic regulation layer/magnetic response layer saturation magnetization is with bias size
Change and change.Angle due to anisotropic magnetoresistance change rate and intensity of magnetization amplitude and between electric current is related, electricity
The magnetic regulation layer/magnetic response layer saturation magnetization of controlling changing is pressed, that is, magnetoresistive ratio is changed, to realize
The voltage of anisotropic magnetoresistance change rate is adjusted.
Compared with prior art, the invention has the benefit that
1, the regulatable anisotropic magnetoresistive sensor of a kind of voltage provided by the invention is realizing good sensing characteristics
While, also there is detection of magnetic field range and magnetoresistive ratio adjustable characteristic simultaneously, can be widely applied to revolving speed control, angle
The field of intelligent control such as degree control, detection of magnetic field and magnetic switch.
2, the regulatable anisotropic magnetoresistive sensor of a kind of voltage provided by the invention, structure is simple, small in size, weight
Gently, low in cost, preparation process is simple, without complicated photoetching process, it is easy to accomplish large-scale industrial production and application.
Detailed description of the invention
Fig. 1 is a kind of structural representation of the regulatable anisotropic magnetoresistive sensor of voltage provided in an embodiment of the present invention
Figure；Wherein, 1 is substrate, and 2 be nonmagnetic metal oxide film, and 3 be magnetic regulation layer, and 4 be magnetic response layer, and 5 be non magnetic heavy
Metallic film；
Fig. 2 is a kind of anisotropic magnetic of the regulatable anisotropic magnetoresistive sensor of voltage provided in an embodiment of the present invention
Resistance (AMR) effect curve figure.
Specific embodiment
In order to keep technical solution of the present invention and advantage relatively sharp, below in conjunction with specific embodiments to the present invention into
One step explanation.But the purposes and purpose of these particularization embodiments are only used to enumerate the present invention, not to reality of the invention
Protection scope constitutes any type of any restriction, more non-that protection scope of the present invention is confined to this.
Embodiment
As shown in Figure 1, being a kind of knot of the regulatable anisotropic magnetoresistive sensor of voltage provided in an embodiment of the present invention
Structure schematic diagram；Embodiment anisotropic magnetoresistive sensor is followed successively by monocrystalline silicon substrate 1, nonmagnetic metal oxide film from bottom to top
2, magnetic regulation layer 3, magnetic response layer 4 and non magnetic heavy metal film 5.Wherein, magnetic regulation layer 3 and nonmagnetic metal aoxidize
The oxidation reaction of oxonium ion migration, the 3d orbital electron of magnetic atom and the 2p orbital electron of oxonium ion occur for the interface of film 2
Hydridization exists so that magnetic regulation layer 3 is in the transition stage of ferromagnetic state and antiferromagnetic state with the magnetic response layer 4
Spin-exchange-coupled effect.Magnetic atom and nonmagnetic metal oxide film when applying face external voltage, in the magnetic regulation layer 3
Oxidation reaction degree between oxonium ion in 2 changes, so that the magnetic state variation of the magnetic regulation layer 3, magnetic response layer 4
Suffered Interlayer Exchange Coupling Strength Changes lead to magnetic regulation layer/magnetic response layer saturation magnetization and magnetic anisotropy
Field size changes with the change of voltage swing, that is, realizes voltage while regulating and controlling the anisotropic magnetoresistance change of magnetoresistive sensor
The effect of rate and detection of magnetic field range.
In the present embodiment, nonmagnetic metal oxide film 2 is magnesia (MgO), with a thickness of 200nm；Magnetism regulates and controls layer 3
Cobalt (Co), with a thickness of 1nm；Magnetic response layer 4 is permalloy (NiFe), and with a thickness of 20nm, non magnetic heavy metal film 5 is tantalum
(Ta), with a thickness of 5nm.The magnetic resistance that silicon chip/MgO (200nm) of embodiment/Co (1nm)/NiFe (20nm)/Ta (5nm) is formed
Sensor is prepared using following methods:
Step 1 selects single crystalline Si as substrate, deposits the MgO film of 200nm on it using magnetron sputtering method；
Step 2, the Co film for being sequentially depositing 1nm on the MgO film that step 1 obtains using magnetron sputtering method and 20nm
NiFe film；
Step 3, the Ta film for forming 5nm on the NiFe film that step 2 obtains using magnetron sputtering method form hetero-junctions
Structure；
Step 4 carries out lithography and etching to the heterojunction structure that step 3 obtains using microelectronics photoetching process, forms micro-nano
Figure, and conductive electrode is prepared, obtain the magnetoresistive sensor.
Under different applied voltages, silicon chip/MgO (200nm)/Co (1nm)/NiFe of embodiment is tested and calculated
The anisotropic-magnetoresistance effect curve and its ceiling effect value for the magnetoresistive sensor that (20nm)/Ta (5nm) is formed, such as Fig. 2 institute
Show.Under the applied voltage of 0V, the ceiling effect value for the anisotropic-magnetoresistance effect that the magnetoresistive sensor generates is about
1%；Under the applied voltage of 5V, magnetism regulation layer/magnetic response layer saturation magnetization is reduced, anisotropic magnetoresistance effect
The effect value of curve is answered to change to about 0.8%；Show magnetoresistive ratio of the change to the magnetoresistive sensor of applied voltage
With regulating and controlling effect.Meanwhile the saturation magnetic field of the magnetoresistive sensor also by 0V when 25Oe of 12Oe when increasing to 10V, table
The change of bright applied voltage also has regulating and controlling effect to the detection of magnetic field range of the magnetoresistive sensor.
Claims (5)
1. a kind of regulatable anisotropic magnetoresistive sensor of voltage, which is characterized in that the magnetoresistive sensor includes substrate, with
And it is sequentially formed in [nonmagnetic metal oxide film/magnetism regulation layer/magnetic response layer] on substratenPlural layers and
Non magnetic heavy metal film, wherein n >=1.
2. the regulatable anisotropic magnetoresistive sensor of voltage according to claim 1, which is characterized in that described non magnetic
Metal oxide thin films be magnesia, zinc oxide, boron oxide, titanium oxide, dysprosia or other ion-oxygen compounds, with a thickness of 10nm~
20μm。
3. the regulatable anisotropic magnetoresistive sensor of voltage according to claim 1, which is characterized in that the magnetic tune
The material for controlling layer and magnetic response layer is permalloy, cobalt, ferro-cobalt, ferro-cobalt boron or nickel cobalt, with a thickness of 1nm~1 μm.
4. the regulatable anisotropic magnetoresistive sensor of voltage according to claim 1, which is characterized in that described non magnetic
Heavy metal film is strong Quantum geometrical phase material, specially tantalum, platinum, gold, tungsten or Bi2Te3, with a thickness of 1nm~20nm.
5. the regulatable anisotropic magnetoresistive sensor of voltage according to claim 1, which is characterized in that described [non-magnetic
Property metal oxide thin films/magnetism regulate and control layer/magnetic response layer]nThe specific value of repetition period n can be according to required magnetoelectricity resistive
Rate size is adjusted.
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| CN201811308918.7A CN109545956A (en) | 2018-11-05 | 2018-11-05 | A kind of regulatable anisotropic magnetoresistive sensor of voltage and preparation method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110029315A (en) * | 2019-04-29 | 2019-07-19 | 电子科技大学 | A kind of super crystal lattice material and its preparation method and application |
| CN110197872A (en) * | 2019-06-03 | 2019-09-03 | 西安交通大学 | Adjustable anisotropic magnetoresistance sensor of measurement range and preparation method thereof |
| CN111044952A (en) * | 2019-12-02 | 2020-04-21 | 北京航空航天大学青岛研究院 | Magnetic sensor |
| CN111613718A (en) * | 2020-05-26 | 2020-09-01 | 中国人民解放军国防科技大学 | Enhancement mode film magnetism adjustable structure |
| CN113866691A (en) * | 2021-12-02 | 2021-12-31 | 北京芯可鉴科技有限公司 | Tunneling magnetoresistance sensor and preparation method and use method thereof |
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| JP2009239135A (en) * | 2008-03-28 | 2009-10-15 | Tokyo Metropolitan Univ | Magnetic memory cell and magnetic storage device using same, and magnetic storage method |
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| JP2009239135A (en) * | 2008-03-28 | 2009-10-15 | Tokyo Metropolitan Univ | Magnetic memory cell and magnetic storage device using same, and magnetic storage method |
| CN103956249A (en) * | 2014-04-03 | 2014-07-30 | 中国科学院物理研究所 | Artificial antiferromagnetic coupling multilayer film material with vertical anisotropy |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110029315A (en) * | 2019-04-29 | 2019-07-19 | 电子科技大学 | A kind of super crystal lattice material and its preparation method and application |
| CN110029315B (en) * | 2019-04-29 | 2020-01-31 | 电子科技大学 | superlattice materials, and preparation method and application thereof |
| CN110197872A (en) * | 2019-06-03 | 2019-09-03 | 西安交通大学 | Adjustable anisotropic magnetoresistance sensor of measurement range and preparation method thereof |
| CN111044952A (en) * | 2019-12-02 | 2020-04-21 | 北京航空航天大学青岛研究院 | Magnetic sensor |
| CN111613718A (en) * | 2020-05-26 | 2020-09-01 | 中国人民解放军国防科技大学 | Enhancement mode film magnetism adjustable structure |
| CN111613718B (en) * | 2020-05-26 | 2023-05-09 | 中国人民解放军国防科技大学 | Enhanced film magnetism adjustable structure |
| CN113866691A (en) * | 2021-12-02 | 2021-12-31 | 北京芯可鉴科技有限公司 | Tunneling magnetoresistance sensor and preparation method and use method thereof |
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Application publication date: 20190329 |