CN109543288B - High-power radiation source design method based on abrupt topological state - Google Patents
High-power radiation source design method based on abrupt topological state Download PDFInfo
- Publication number
- CN109543288B CN109543288B CN201811383857.0A CN201811383857A CN109543288B CN 109543288 B CN109543288 B CN 109543288B CN 201811383857 A CN201811383857 A CN 201811383857A CN 109543288 B CN109543288 B CN 109543288B
- Authority
- CN
- China
- Prior art keywords
- radiation
- designing
- topological state
- abrupt
- topological
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/20—Design optimisation, verification or simulation
Abstract
The high-power radiation source design method based on the abrupt topological state designs the material components and the thickness of different dielectric constants through frequency, designs the output radiation characteristic of a device at the topological state abrupt change point of the material, and specifically comprises the following steps: s1, designing a radiation device structure supporting a sudden change topological state, and dividing the radiation device structure into three layers of a graphene layer, a boron nitride layer and a metal aluminum layer, wherein the graphene layer has a medium characteristic under extreme ultraviolet, and the metal aluminum layer realizes a metal characteristic; s2, designing the thickness of the radiation device structure; s3, designing radiation field intensity and electronic flight distance, enabling the Cerenkov radiation wave vector direction of the topological mutation point to be along the propagation direction, enabling the energy flow direction of electromagnetic waves to be perpendicular to the wave vector direction, and achieving electronic energy maximum extraction. The invention realizes high-power microwave radiation by using the topological state mutation of the material; on the basis of realizing radiation by using low electron energy, adjustable narrow-band high-power output is realized, so that the design and development of a high-power center-frequency adjustable radiation chip are formed.
Description
Technical Field
The invention relates to the field of high-power microwave device design, in particular to a high-power radiation source design method based on a sudden change topological state.
Background
When charged particles pass through a dielectric medium at a certain threshold of velocity, the electromagnetic radiation emitted by the drive medium is called cerenkov radiation. The generation of cerenkov radiation requires that the charged particle velocity exceeds the phase velocity of the electromagnetic wave in the medium. Conventional generation of cerenkov radiation requires electron energies on the order of several hundred keV. Radiation sources under such high pressure requirements are difficult to meet in practice, from the standpoint of safety, cost and stability.
In order to reduce the electron energy required for generating Cerenkov radiation, Marin Soljacic et al, the American Massachusetts institute of technology, and others, disclose that high-order Smith-Purcell effect is utilized to realize low electron energy radiation, the electron energy is 4keV, the electron energy is limited by a semiconductor processing technology, and the shortest output wavelength is 400 nanometers; the Liusheng Bomby and others disclose a Cerenkov surface plasmon polariton method to realize a miniature radiation source, the output wavelength is 500 nanometers, and the required electron energy is 15 keV; schlumbrons et al discloses a design method of a cerenkov radiation device in a hyperbolic metamaterial, which extracts electromagnetic energy around low-energy electrons by utilizing a large wave vector in the hyperbolic metamaterial. However, the design of the hyperbolic metamaterial depends on the intrinsic electromagnetic characteristics of the metal and the dielectric material in the frequency band, no corresponding material system exists at present in the frequency bands of terahertz, ultra-deep ultraviolet and the like, and no design method and related technology of the high-power radiation source in the ultra-violet frequency band exist at present. Meanwhile, the radiation power spectrum is wide, the single-frequency radiation electromagnetic power spectrum density is low in practical application, the radiation center frequency cannot be regulated, and the application of the extreme ultraviolet radiation source is greatly limited.
The high-power radiation source device is a core module of a high-power microwave system, and the traditional device adopts an electric vacuum related technology. For the electro-vacuum technology, the higher the frequency, the greater the processing difficulty and the lower the radiation efficiency of the device. The dispersion curve of the dielectric constant of a conventional medium is "elliptic" as shown in fig. 1. In a hyperbolic metamaterial, the dielectric constant dispersion curve is "hyperbolic" as shown in fig. 2. Aiming at the problem that a miniature high-frequency and high-power electromagnetic wave radiation device is lacked at present, the design and development of a high-power extreme ultraviolet radiation source are carried out, and a method is found for realizing the state that the topological state of a dispersion curve is changed from an elliptic curve type to a hyperbolic curve type to design the radiation characteristic of the device, wherein the topological state is changed into a sudden change from a positive elliptic curve type in a figure 1 to a hyperbolic curve type in a figure 2, and a negative elliptic curve type in the figure 1 is changed into the hyperbolic curve type in the figure 2.
Disclosure of Invention
The invention aims to solve the technical problem that the traditional material is limited by dielectric constant and cannot reach a certain frequency band, and provides a high-power radiation source design method based on a sudden change topological state, which realizes high-power microwave radiation by utilizing the sudden change of the topological state of the material; on the basis of realizing radiation by using low electron energy, adjustable narrow-band high-power output is realized, so that the design and development of a high-power center-frequency adjustable radiation chip are formed.
The technical scheme adopted by the invention for solving the technical problems is as follows:
a high-power radiation source design method based on a sudden change topological state realizes a state that a dispersion curve is changed from an elliptic curve type to a hyperbolic curve type topological state to generate sudden change through frequency design of material components with different dielectric constants and thickness, and designs the output radiation characteristic of a device at a topological state sudden change point of a material, and specifically comprises the following steps:
s1, designing a radiation device structure supporting a sudden change topological state, wherein the radiation device structure is divided into three layers of a graphene layer/a boron nitride layer/a metal aluminum layer, the graphene layer has a medium characteristic under extreme ultraviolet, and the metal aluminum layer realizes a metal characteristic;
s2, designing the thickness of the radiation device structure, and determining the number of graphene layers and the thicknesses of the boron nitride layer and the metal aluminum layer according to the formulas (1) and (2):
y＝z＝mg+nd+(1-m-n)m(2)
whereingIs a dielectric constant of the graphene, and is,dis a dielectric constant of boron nitride and is,mm and n are the thickness ratios of the graphene layer and the boron nitride layer respectively,x、y、zrespectively calculating the equivalent dielectric constant of the radiation device structure in the direction X, Y, Z based on the formulas (1) and (2)x、y、z；
S3, designing radiation field intensity and electronic flight distance, enabling the Cerenkov radiation wave vector direction of the topological mutation point to be along the propagation direction, enabling the energy flow direction of electromagnetic waves to be perpendicular to the wave vector direction, achieving electronic energy maximum extraction, and enabling electromagnetic energy coupled into a medium to be radiated outside the structure body with the lowest loss (the loss influence caused by the existence of a metal imaginary part is reduced to the greatest extent while the electromagnetic energy around the electrons is extracted).
According to the scheme, in the step S1, the dielectric constant of the graphene is dynamically regulated through an external voltage.
According to the scheme, in the step S2, the thickness of the graphene layer is 1 nanometer, the thickness of the boron nitride layer is 3-5 nanometers, and the thickness of the metal aluminum layer is 5-10 nanometers.
According to the scheme, in the step S3, the energy density around the electrons is integrated to obtain the energy of the electrons under the structure of the radiation device by using 1keV, and the radiation power density of the electromagnetic waves reaches 2 × 1012W/cm2Compared with the radiation power density in the hyperbolic metamaterial, the power density is improved by one order of magnitude.
According to the scheme, all preparation and processing processes of the high-power radiation source are completed through a standard semiconductor micro-nano processing process, and the structure body is processed on the chip (the size of the radiation source is reduced, the cost can be reduced, and the large-scale mass production capacity is realized).
Compared with the prior art, the invention has the following beneficial effects:
1. the invention discloses a theory and a design scheme for designing the output characteristics of a device at the topological state catastrophe point of a material for the first time, and analyzes and explains the principle and the characteristics of the device at an extreme ultraviolet frequency band, wherein the output power of the device is one order of magnitude higher than the traditional highest index (hyperbolic metamaterial) in simulation;
2. according to the invention, through special structural design and selection of materials, the wave vector direction and the energy flow direction of electromagnetic waves are vertical, and under the special condition, the electromagnetic energy coupled into a medium is radiated outside a structure body with the lowest loss while the electronic energy is maximally extracted;
3. the invention uses the semiconductor micro-nano processing technology to process the structural body (the scatterer) on the chip, and is expected to be widely applied in the fields of micro high-power microwave weapons, high-efficiency long-distance wireless energy transmission and the like which take electromagnetic wave energy as carriers, so that the electromagnetic field is more efficiently transmitted to a far field.
Drawings
FIG. 1 is a "ellipse" plot of the dispersion curve of a conventional material;
FIG. 2 is a hyperbolic metamaterial hyperbolic diagram;
FIG. 3 is a schematic diagram of a high power radiation source based on a sudden topological state according to the present invention;
FIG. 4 is a schematic diagram of the change of the equivalent dielectric constant from "elliptical" to "hyperbolic" with the change of wavelength according to the present invention;
FIG. 5 is a schematic view of the topological mutated region of FIG. 4, dark gray being the topological mutated region;
FIG. 6 is an electromagnetic pattern diagram with an output wavelength of 111 nm obtained by simulation calculation;
fig. 7 is a diagram of electromagnetic modes with an output center wavelength of 174 nm obtained by simulation.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments.
The core technical approach of the invention is to design the radiation characteristic of the device by designing material components with different dielectric constants and thicknesses at specific frequency to realize the state that the topological state of a dispersion curve is changed from an elliptic curve type to a hyperbolic curve type and is mutated. The positive elliptic curve type in figure 1 is changed into the hyperbolic type in figure 2, and the negative elliptic curve type in figure 1 is changed into the hyperbolic type in figure 2. Based on the design idea, the design and development of the high-power extreme ultraviolet radiation source are carried out aiming at the problem that a miniature high-frequency and high-power electromagnetic wave radiation device is lacked at present.
The invention is explained by taking a small radiation source with the central frequency as an extreme ultraviolet band as an example, and the specific device structure is shown in fig. 3. The high-power radiation source design method based on the abrupt topological state specifically comprises the following steps:
s1, supporting the structural design of a radiation device in a sudden change topological state, wherein the structure of the radiation device is divided into three layers of a graphene layer, a boron nitride layer and a metal aluminum layer, the graphene layer has the medium characteristic of extreme ultraviolet, and the dielectric constant of graphene is dynamically regulated and controlled by applying voltage; the metal aluminum layer realizes the metal characteristic;
s2, designing the thickness of the radiation device structure, determining the number of graphene layers and the thicknesses of the boron nitride layer and the metal aluminum layer according to formulas (1) and (2), where the graphene layer is 1nm, the boron nitride layer is 3 to 5nm, and the metal aluminum layer is 5 to 10 nm (for example, graphene is 1nm, boron nitride is 4nm, and metal aluminum is 5nm, where m is 0.1, n is 0.4, and n is 0.5); designing and calculating equivalent dielectric constant on the basis of formulas (1) and (2)x、y、zAs shown in fig. 4, point a' is the device design operating point, and the corresponding design radiation center wavelengths are 100 nm and 170 nm, as shown in fig. 5;
s3, designing radiation field intensity and electronic flight distance, enabling the Cerenkov radiation wave vector direction of the topological mutation point to be along the propagation direction, enabling the energy flow direction of electromagnetic waves to be perpendicular to the wave vector direction, namely enabling the energy flow direction to be perpendicular to the propagation direction, achieving electronic energy maximum extraction, and enabling electromagnetic energy coupled into a medium to be radiated outside the structure body with lowest loss.
The method comprises the following technical key points of (1) a design principle method and a technical approach of a radiation device based on a mutation topological state, (2) a high-power output characteristic of the radiation device based on the mutation topological state, (3) a wave vector and energy flow vector regulation method of the radiation device based on the mutation topological state, and on the basis of the theoretical analysis and calculation result, the electromagnetic radiation characteristic in the structure is calculated by using a Particle-in-Cell (PIC-FDTD) algorithm, the calculation result is shown in figures 6 and 712W/cm2Relative to hyperbolic metamaterialThe radiation power density in the material is improved by one order of magnitude.
The invention is not limited solely to the use as set forth in the description and the embodiments, but various corresponding modifications and variations can be made in accordance with the invention by those skilled in the art, all falling within the scope of the invention as claimed.
Claims (5)
1. The high-power radiation source design method based on the abrupt topological state is characterized in that the state that the topological state of a dispersion curve is abrupt changed from an elliptic curve type to a hyperbolic curve type is realized by designing material components and thicknesses with different dielectric constants through frequency, and the output radiation characteristic of a device is designed at the topological state abrupt change point of the wave vector of the material, and the method specifically comprises the following steps:
s1, designing a radiation device structure supporting a sudden change topological state, wherein the radiation device structure is divided into three layers of a graphene layer/a boron nitride layer/a metal aluminum layer, the graphene layer has a medium characteristic under extreme ultraviolet, and the metal aluminum layer realizes a metal characteristic;
s2, designing the thickness of the radiation device structure, and determining the number of graphene layers and the thicknesses of the boron nitride layer and the metal aluminum layer according to the formulas (1) and (2):
y＝z＝mg+nd+(1-m-n)m(2)
whereingIs a dielectric constant of the graphene, and is,dis a dielectric constant of boron nitride and is,mm and n are the thickness ratios of the graphene layer and the boron nitride layer respectively,x、y、zrespectively calculating the equivalent dielectric constant of the radiation device structure in the direction X, Y, Z based on the formulas (1) and (2)x、y、z；
S3, designing radiation field intensity and electronic flight distance, enabling the Cerenkov radiation wave vector direction of the topological mutation point to be along the propagation direction, enabling the energy flow direction of electromagnetic waves to be perpendicular to the wave vector direction, achieving electronic energy maximum extraction, and enabling electromagnetic energy coupled into a medium to be radiated outside the structure body with the lowest loss.
2. The method of claim 1 for designing a high power radiation source based on an abrupt topological state, wherein: in the step S1, the dielectric constant of the graphene is dynamically controlled by an external voltage.
3. The method of claim 1 for designing a high power radiation source based on an abrupt topological state, wherein: in step S2, the thickness of the graphene layer is 1nm, the thickness of the boron nitride layer is 3-5 nm, and the thickness of the metal aluminum layer is 5-10 nm.
4. The method of claim 1, wherein in step S3, the energy density around the electrons is integrated to obtain the energy of the electrons with 1keV under the structure of the radiation device, and the radiation power density of the electromagnetic wave reaches 2 × 1012W/cm2Compared with the radiation power density in the hyperbolic metamaterial, the power density is improved by one order of magnitude.
5. The method of claim 1 for designing a high power radiation source based on an abrupt topological state, wherein: all preparation and processing processes of the high-power radiation source are completed through a standard semiconductor micro-nano processing process, and the structural body is processed on a chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811383857.0A CN109543288B (en) | 2018-11-16 | 2018-11-16 | High-power radiation source design method based on abrupt topological state |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811383857.0A CN109543288B (en) | 2018-11-16 | 2018-11-16 | High-power radiation source design method based on abrupt topological state |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109543288A CN109543288A (en) | 2019-03-29 |
| CN109543288B true CN109543288B (en) | 2020-10-16 |
Family
ID=65848850
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811383857.0A Active CN109543288B (en) | 2018-11-16 | 2018-11-16 | High-power radiation source design method based on abrupt topological state |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109543288B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109586042B (en) * | 2018-12-03 | 2020-08-28 | 中国科学技术大学 | Wave absorber and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1870206A (en) * | 2004-12-29 | 2006-11-29 | 电灯专利信托有限公司 | Process for producing a radiation source, and radiation source |
| US20140048725A1 (en) * | 2012-08-20 | 2014-02-20 | University Of Electronic Science And Technology Of China | Method for generating high power electromagnetic radiation based on double-negative metamaterial |
| CN103985937A (en) * | 2014-03-26 | 2014-08-13 | 南京航空航天大学 | Plasma microwave isolation device, microwave isolation method and device applications |
| CN106569248A (en) * | 2016-11-02 | 2017-04-19 | 清华大学 | Cerenkov radiation device and manufacturing method thereof, and radiation extraction method |
-
2018
- 2018-11-16 CN CN201811383857.0A patent/CN109543288B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1870206A (en) * | 2004-12-29 | 2006-11-29 | 电灯专利信托有限公司 | Process for producing a radiation source, and radiation source |
| US20140048725A1 (en) * | 2012-08-20 | 2014-02-20 | University Of Electronic Science And Technology Of China | Method for generating high power electromagnetic radiation based on double-negative metamaterial |
| CN103985937A (en) * | 2014-03-26 | 2014-08-13 | 南京航空航天大学 | Plasma microwave isolation device, microwave isolation method and device applications |
| CN106569248A (en) * | 2016-11-02 | 2017-04-19 | 清华大学 | Cerenkov radiation device and manufacturing method thereof, and radiation extraction method |
Non-Patent Citations (1)
| Title |
|---|
| Tunable Extremely Ultra-Violet Emitter Based on Threshold-Less Cherenkov Radiation;Long Xiao等;《2018 Progress in Electromagnetics Research Symposium (PIERS-Toyama)》;20180804;第2505-2510页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109543288A (en) | 2019-03-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109543288B (en) | High-power radiation source design method based on abrupt topological state | |
| CN104852254B (en) | A kind of wideband surface phasmon radiator | |
| CN113097034B (en) | Slow wave structure based on coupling resonance | |
| Zhu et al. | Wideband absorbing plasmonic structures via profile optimization based on genetic algorithm | |
| CN112563863B (en) | On-chip terahertz source based on hyperbolic metamaterial and preparation method thereof | |
| CN202323023U (en) | PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment with new-structure graphite boat | |
| CN107295738A (en) | A kind of plasma processing apparatus | |
| Zhang et al. | W-band gyro-BWO with a four-stage depressed collector | |
| CN106783476B (en) | A kind of radially continuous wave Terahertz of double frequency tiltedly notes pipe | |
| CN108767413A (en) | High-power medium microwave component micro discharge suppressing method based on laser ablation surface treatment | |
| Dong et al. | A meta-structure-based frequency doubler with low input power | |
| Laviada et al. | Parallelized multilevel characteristic basis function method for solving electromagnetic scattering problems | |
| Giruzzi et al. | Electron cyclotron wave absorption by the fast tail generated by the DC electric field in Tokamak plasmas | |
| Pandey et al. | Metamaterial based compact antenna design for UWB applications | |
| Wang et al. | Design of E-band high power and high efficiency folded-waveguide traveling-wave tube | |
| CN113556930B (en) | Broadband adjustable reflection-free wave absorbing device and wave absorbing method | |
| Li et al. | Effect of electron density gradient on power absorption during gigahertz electromagnetic wave propagating in cold plasma | |
| CN108598846B (en) | System for generating Cerenkov radiation | |
| CN112233953B (en) | Terahertz laser diode based on field emission electrons | |
| Tsakadze et al. | Inductively coupled plasmas sustained by an internal oscillating current | |
| Tang et al. | Study of a metallic antenna backed by graphene-based reflector | |
| CN114628915A (en) | Design method, device and structure of graphene terahertz broadband wave absorber | |
| Liu et al. | Enhance the efficiency of sheet beam TWT with advanced optimization algorithm | |
| Zaslavsky et al. | Novel magnetron-injection gun forming ribbon helical electron beam for terahertz gyrotrons of megawatt power level | |
| Berka et al. | Optimization of Technological Qualities of Photovoltaic Cells Based on Absorber Metamaterial (SRRs) Resonators |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |