CN109502543A - A kind of nano-manipulation device - Google Patents

A kind of nano-manipulation device Download PDF

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Publication number
CN109502543A
CN109502543A CN201811647147.4A CN201811647147A CN109502543A CN 109502543 A CN109502543 A CN 109502543A CN 201811647147 A CN201811647147 A CN 201811647147A CN 109502543 A CN109502543 A CN 109502543A
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China
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movement mechanism
nano
sample stage
freedom
electron beam
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CN201811647147.4A
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CN109502543B (en
Inventor
杨立军
王根旺
王扬
侯超剑
龙昊天
丁烨
赵春洋
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Harbin Institute of Technology
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Harbin Institute of Technology
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0004—Apparatus specially adapted for the manufacture or treatment of nanostructural devices or systems or methods for manufacturing the same
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manipulator (AREA)

Abstract

The present invention provides a kind of nano-manipulation devices, are related to processing and manufacturing technology.Nano-manipulation device of the present invention includes: the first movement mechanism, second movement mechanism and control device, first movement mechanism has multiple translational degree of freedom and at least one rotary freedom, second movement mechanism has multiple rotary freedoms and at least one translational degree of freedom, actuating station is mounted on first movement mechanism and second movement mechanism, first movement mechanism and second movement mechanism are connected with the control device respectively, the control device is suitable for controlling first movement mechanism and second movement mechanism drives the execution end motion.The present invention to form micro- tweezers by installing actuating station on first movement mechanism and second movement mechanism, by being used cooperatively for multiple actuating stations, realizes the clamping to the nano wire or nano particle.

Description

A kind of nano-manipulation device
Technical field
The present invention relates to processing and manufacturing technology, in particular to a kind of nano-manipulation device.
Background technique
Nano-manipulator technology be nano material is removed using probe, electron beam, light etc., is picked up, is moved, is placed, Controllable deforming etc., operation and positioning accuracy realize the processing and assembly of nano material up to Nano grade, are a new generations The key of the structural assembling of nanostructures.Nanometer interconnection technique is based on technologies hands such as chemical deposition, high energy beam irradiation, ultrasonic waves Section realizes the connection between nano material, between nano material and electrode, is conducive to the manufacture of new type functional device, determines Determine the success or failure that nanostructure realizes its functionalization.Existing nano-manipulation device flexibility ratio is low, it is difficult to realize that 3 D complex is grasped Make, and be difficult to combine with nanometer interconnection technique, limits application of the device in the manufacture of novel nano device.
Summary of the invention
In view of this, the present invention is directed to propose a kind of nano-manipulation device, real by the cooperation between different motion mechanism The diversity of nano-manipulation is showed.
In order to achieve the above objectives, the technical scheme of the present invention is realized as follows:
A kind of nano-manipulation device, comprising: the first movement mechanism, the second movement mechanism and control device, first fortune Motivation structure has multiple translational degree of freedom and at least one rotary freedom, and second movement mechanism has multiple rotations freely Degree and at least one translational degree of freedom are mounted on actuating station on first movement mechanism and second movement mechanism, institute It states the first movement mechanism and second movement mechanism is connected with the control device respectively, the control device is suitable for control First movement mechanism and second movement mechanism drive the execution end motion.
Optionally, the actuating station is tungsten needle or AFM probe, and the control device is suitable for controlling first movement mechanism It drives respectively described with second movement mechanism or executes end motion, so that the tip of the actuating station is formed micro- tweezers, with reality Now to the clamping of nanostructure.
It optionally, further include fine positioning sample stage, there are three orthogonal translations for the fine positioning sample stage tool freely Degree, the fine positioning sample stage are suitable for putting the nanostructure and drive the nanostructure mobile.
Optionally, further includes: coarse positioning sample stage is fixedly connected with the fine positioning sample stage；The coarse positioning sample Sample platform has multiple translational degree of freedom and at least two rotary freedoms, and the coarse positioning sample stage is suitable for driving the fine positioning Sample stage movement.
Optionally, rotary freedom and three orthogonal translational degree of freedom there are two the coarse positioning sample stage tools, One of them described rotary freedom of the coarse positioning sample stage is to make the fine positioning sample stage around the freedom of center rotation Degree, another described rotary freedom of the coarse positioning sample stage are to make the inclined freedom degree of fine positioning sample stage.
Optionally, there are three orthogonal translational degree of freedom and a rotational freedoms for the first movement mechanism tool.
Optionally, second movement mechanism includes fixing piece, the first revolving part, the second revolving part, third revolving part, institute Stating the second movement mechanism tool, there are three rotational freedoms: first revolving part is driven by the driving device around the fixing piece The freedom degree of rotation；Second revolving part freedom degree driven by the driving device around first revolving part rotation；Institute State the freedom degree of the third revolving part center rotation driven by the driving device around the third revolving part.
Optionally, further include mounting rack, be provided with multiple installation positions on the mounting rack, the installation position is suitable for described the The installation of one movement mechanism or second movement mechanism.
Optionally, first movement mechanism and second movement mechanism are hung by the mounting rack is installed on vacuum Top of chamber, the fine positioning sample stage are installed on the bottom of the vacuum chamber, the fine positioning by the coarse positioning sample stage Sample stage is located at the lower section of first movement mechanism and second movement mechanism.
Optionally, at least two sets of second movement mechanism.
Compared with the existing technology, nano-manipulation device of the present invention has the advantage that
The present invention passes through multiple institutes by installing actuating station on first movement mechanism and second movement mechanism It states being used cooperatively for actuating station and forms micro- tweezers, realize the clamping to the nano wire or nano particle；Pass through described first The movement of movement mechanism and second movement mechanism increases the flexibility ratio of micro- tweezers.
Fine positioning sample stage of the present invention can realize the movement of three-dimensional space by three translational degree of freedom, by the sample Product are moved to the position of setting, carry out Primary Location；The fine positioning sample stage is connect with the 5th revolving part, passes through the 4th The rotation of revolving part tilts the fine positioning sample stage, provides convenience to obtain optimal electron beam imaging；By described 5th revolving part rotation rotates the fine positioning sample stage, finds optimal nanometer structure operation angle with this；By to institute State fine positioning sample stage tentatively to be adjusted, be at optimal operating position, can reduce indirectly the movement of fine positioning away from From to save equipment cost, and realizing the movement of large stroke and high precision.
The present invention is mobile by the three-dimensional of the fine positioning sample stage, the increase actuating station operating device of deflecting from By spending, by being used cooperatively for the fine positioning sample stage and the actuating station operating device, can carry out the nano particle and Movement after push-and-pull, clamping or the clamping of the nano wire, convenient for the connection of the nano particle and the nano wire, to become The flexibility ratio for increasing nano-manipulation of phase.
Detailed description of the invention
The attached drawing for constituting a part of the invention is used to provide further understanding of the present invention, schematic reality of the invention It applies example and its explanation is used to explain the present invention, do not constitute improper limitations of the present invention.In the accompanying drawings:
Fig. 1 is the front view of the nanometer attachment device of the embodiment of the present invention；
Fig. 2 is the top view of the nanometer attachment device of the embodiment of the present invention；
Fig. 3 is the axonometric drawing of the nanometer attachment device of the embodiment of the present invention；
Fig. 4 is the top view of the optical near-field generating apparatus of the embodiment of the present invention；
Fig. 5 is the partial enlarged view in Fig. 4 of the embodiment of the present invention at I；
Fig. 6 is the interior views of the vacuum chamber of the embodiment of the present invention；
Fig. 7 is the axonometric drawing of the nano-manipulation device of the embodiment of the present invention；
Fig. 8 is the partial enlarged view in Fig. 7 of the embodiment of the present invention at II；
Fig. 9 is the actuating station mounting structure schematic diagram of the embodiment of the present invention；
Figure 10 is another actuating station mounting structure axonometric drawing of the embodiment of the present invention；
Figure 11 is the axonometric drawing of the second movement mechanism of the embodiment of the present invention；
Figure 12 is the axonometric drawing of the first movement mechanism of the embodiment of the present invention；
Figure 13 is the sample stage axonometric drawing of the embodiment of the present invention；
Figure 14 is the coarse positioning sample stage axonometric drawing of the embodiment of the present invention；
Figure 15 is the fine positioning sample stage axonometric drawing of the embodiment of the present invention；
Figure 16 is the vacuum chamber cross-sectional view of the embodiment of the present invention；
Figure 17 is the nanocomposite optical antenna structure view of the embodiment of the present invention；
Figure 18 is the structural schematic diagram of the near infrared light electrical part of the embodiment of the present invention；
Figure 19 is the nano wire link position relation schematic diagram of the embodiment of the present invention；
Figure 20 is the flow chart of the processing method of the near infrared light electrical part of the embodiment of the present invention；
Figure 21 is the flow chart of the nano wire connection method of the embodiment of the present invention；
Figure 22 is the flow chart of the connection method of the nano wire and electrode of the embodiment of the present invention.
Description of symbols:
101- vacuum chamber, the transmitting of 102- electron beam and regulation module, 103- electron beam object lens, 104- photodetector mould Block, 105- protective gas introducing device, 106-CCD camera, 107- control device, 108- display device, 201- coarse positioning sample Platform, 202- fine positioning sample stage, the first movement mechanism of 203-, the second movement mechanism of 204-, 205-AFM probe, 206- tungsten needle connect Fitting, 207- tungsten needle, 208-AFM probe connection, 209- third revolving part, the second revolving part of 210-, the first revolving part of 211-, The first rotary connector of 212-, 213- third sliding block, the second sliding block of 214-, the first sliding block of 215-, 216- fixed block, 217- base Seat, the 5th translational piece of 218-, the 6th translational piece of 219-, the 7th translational piece of 220-, the 5th revolving part of 221-, 222- the 4th rotate Part, 223- attachment base, the 8th translational piece of 224-, the 9th translational piece of 225-, the tenth translational piece of 226-, 227- fixing piece, 228- peace Fill block, 229- connecting rod, 230- link block, 301- laser, 302- laser parameter amplifier, 303- fiber coupler, 304- light Fibre, 305- optics vibration-isolating platform, 306- laser power stability device, 307- laser beam-shrinked mirror, 308- laser power monitor, 309- Detection spectroscope, 310- Laser polarizers, 311- laser absorption device, 312- decaying spectroscope, 313- reflecting mirror, 314- are shown Device, 315- mirror surface, the first reflecting mirror of 316-, the second reflecting mirror of 317-, 318- optical fiber probe connector, 319- optical fiber probe, 320- collimator connector, 321- optical fiber collimator, 1- big disk, 2-roundels, 3- first electrode, 4- nano wire, 5- nanometers Optical antenna, 6- silicon base, 7- second electrode.
Specific embodiment
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the present invention can phase Mutually combination.
In addition, direction or positional relationship all in the text being previously mentioned in an embodiment of the present invention are the position based on attached drawing Relationship is set, only for facilitating the description present invention and simplifying description, rather than implies or imply that signified device or element must have The specific orientation having, is not considered as limiting the invention.
The present invention will be described in detail below with reference to the accompanying drawings and embodiments.
Embodiment one
A kind of nanometer of attachment device, as shown in Figure 1 to Figure 3, including vacuum chamber 101, optical near-field generating apparatus, nano-manipulation Device and control device 107, the optical near-field generating apparatus include vacuum chamber laser beam emitting device and actuating station, the nanometer behaviour It include sample stage and actuating station operating device as device；The nano-manipulation device is set to inside the vacuum chamber 101, described Actuating station is connect with the actuating station operating device, the optical near-field generating apparatus, the nano-manipulation device respectively with it is described Control device 107 is connected；The sample stage is suitable for moving sample, and the actuating station operating device is suitable for described in drive Execute end motion.
Here, the sample is that Dispersion on surface has the silicon wafer of nano particle and nano wire, in practical operation, the sample stage On be provided with sample putting position, silicon wafer is placed at the sample putting position, is passed through the control device and is controlled the sample stage It is mobile, to carry out just positioning to the silicon wafer.After the completion of the sample stage just positions, institute is controlled by the control device The movement of actuating station operating device is stated, so that the actuating station is moved to suitable position, then to nano wire and nano particle It is attached.The advantages of this arrangement are as follows electron beam imaging precision is improved by the vacuum chamber 101, to operation and even Termination process carries out real-time vision imaging, and then improves the precision that nano wire is connected with nano particle；Pass through the sample stage pair Silicon wafer is moved, and is placed in silicon wafer within the scope of Electron-beam measuring, then by the actuating station operating device to the nanometer Line and nano particle are operated, by the dual cooperation of the sample stage and the actuating station operating device, make nano wire and More preferably, the space of nano wire and nano particle is wider for the flexible operation degree of nano particle, to help to improve nano wire The precision connected with nano particle.
The nanometer attachment device further includes display device 108, and the display device 108 connects with the control device 107 It connects, the display suitable for real time data and image.Alternatively, industrial personal computer can be used herein and substitute the control device 107.
Embodiment two
Embodiment as described above, the different place of the present embodiment are that as shown in Figures 1 to 4, near field light is sent out Generating apparatus includes: laser beam emitting device, fiber coupler 303 and actuating station, and the laser beam emitting device is suitable for generating laser light Beam, the fiber coupler 303 are connect by optical fiber 304 with the actuating station, and the fiber coupler 303 is suitable for swashing described Light light beam coupling is into the optical fiber 304；The actuating station is suitable for generating near field light using the laser beam.
The advantages of this arrangement are as follows by fiber coupler 303 by the free laser beam coupled into optical fibres 304 in space, It recycles the optical fiber 304 to connect with the actuating station, laser beam is transferred to by the actuating station by the optical fiber 304.
As shown in Figures 1 to 4, the laser beam emitting device and the fiber coupler 303 are set to the vacuum chamber 101 Outside, the laser beam emitting device are suitable for generating laser beam, and the fiber coupler 303 passes through optical fiber 304 and the execution End connection, the fiber coupler 303 are suitable for the laser beam being coupled into the optical fiber 304；The actuating station is set to Inside the vacuum chamber 101, the actuating station is suitable for generating near field light using the laser beam.
It should be noted that as shown in Figures 2 to 4, the laser beam emitting device is suitable for generating laser beam, the laser Emitter is located at outside the vacuum chamber 101, and is set on optics vibration-isolating platform 305, prevents from vibrating to laser optical path Interference.The vacuum chamber 101 can realize the adjusting of vacuum degree, for improving electron beam imaging precision, and protect sample not by oxygen Change.Here, the side wall of the vacuum chamber 101 is provided with vacuum flange, and the optical fiber 304 passes through institute outside the vacuum chamber 101 Enter the vacuum chamber 101 after stating vacuum flange.The vacuum chamber 101, be adapted to provide for vacuum occur environment, improve electron beam at As precision, and protect sample not oxidized.
The advantages of this arrangement are as follows the generating device of laser is set to outside the vacuum chamber 101, it is convenient for laser The power of near field light can be changed by adjusting the generating device of laser in the adjusting of parameter, obtain be suitble to three-dimensional manometer operation and Near field light required for connecting；The actuating station is set to inside the vacuum chamber 101, laser introduced by optical fiber described in Vacuum chamber 101, to carry out the generation of near field light inside the vacuum chamber 101.
Embodiment three
Embodiment as described above, the different place of the present embodiment be, as shown in Figures 1 to 4, the laser Emitter includes laser 301 and laser parameter amplifier 302, and the laser 301 is suitable for emitting the laser beam, institute Laser beam is stated to project through the laser 301, subsequently into the laser parameter amplifier 302, the laser parameter amplification Device 302 is suitable for the regulation of the wavelength of the laser beam.The advantages of this arrangement are as follows passing through the laser parameter amplifier 302 setting controls the wavelength of the laser beam.
Optionally, as shown in Figure 3 and Figure 4, the laser beam emitting device further includes reflecting mirror 313, the reflecting mirror 313 Mirror surface 315 and the laser beam of the laser 301 transmitting are rendered as the angle of setting, and the reflecting mirror 301 is suitable for will The laser beam that the laser 301 emits reflexes to the laser parameter amplifier 302.The benefit being arranged in this way exists In making the laser beam reflex to the position of setting through the reflecting mirror after transmitting by the setting of the reflecting mirror 313 It sets, can play the role of saving working space in this way.It should be noted that the laser beam is entering the laser parameter Before amplifier 302, first passes through the reflecting mirror 313 and reflect.Here, as shown in figure 5, the reflecting mirror 313 includes first anti- Mirror 316 and the second reflecting mirror 317 are penetrated, the mirror surface of first reflecting mirror 316 is vertical with the mirror surface of the second reflecting mirror, the laser The laser beam that device 301 emits is described to swash by 316 back reflection of the first reflecting mirror to second reflecting mirror 317 Light light beam reflexes to the laser parameter amplifier 302 after second reflecting mirror.Alternatively, the reflecting mirror 313 Or multiple combinations, but purpose is all identical, is for realizing the position that laser beam is reflexed to setting.By more A reflecting mirror is used cooperatively, and the variation of optical path is made to tend to flexibly, increase workbench and utilize space.
Optionally, as shown in Figure 3 and Figure 4, the laser beam emitting device further includes decaying spectroscope 312, the decaying point Light microscopic 312 is suitable for decaying to the power of the laser beam.It should be noted that the laser beam is through the laser 301 project, and are then reflected into the laser parameter amplifier 302, the laser parameter amplifier by the reflecting mirror 313 302 are emitted to the decaying spectroscope 312, and realize difference by the decaying spectroscope 312 of replacement differential declines ratio The laser power of ratio decays.Here, the decaying spectroscope is chosen as needed, can choose any between 0-100% Ratio, such as 50% or 98%.The laser is divided into multi beam by the decaying spectroscope 312, and laser is carried out not respectively Biconditional operation.
Optionally, the laser beam emitting device further includes Laser polarizers 310, and the Laser polarizers 310 are suitable for institute It states laser beam to be polarized, obtains the laser in different polarization direction.Here, the laser beam emitting device further includes laser absorption Device 311, the laser absorption device 311 are suitable for the absorption to remaining laser beam, avoid light pollution.It should be noted that The laser beam is projected through the laser 301, is then reflected into the laser parameter amplification by the reflecting mirror 313 Device 302, the laser parameter amplifier 302 are emitted to the decaying spectroscope 312, and divide in the decaying spectroscope 312 At the laser of setting power proportions, the decaying spectroscope 312 is the laser light that the laser beam is divided into different proportion The laser of beam, required setting ratio is polarized by the Laser polarizers 310；Without the Laser polarizers 310 remaining laser is then incident to the laser absorption device 311, is absorbed.Here be arranged it is spectroscopical be advantageous in that, obtain The laser beam of required power absorbs remaining laser by the laser absorption device 311.
Optionally, as shown in Figure 3 and Figure 4, the laser beam emitting device further includes detection spectroscope 309, passes through the inspection Ratio beam splitting will be carried out by the laser beam again by surveying spectroscope 309.It should be noted that the laser beam is through the laser Device 301 projects, and is then reflected into the laser parameter amplifier 302, the laser parameter amplification by the reflecting mirror 313 Device 302 is emitted to the decaying spectroscope 312, and is divided into the laser of setting power proportions, institute in the decaying spectroscope 312 Stating decaying spectroscope 312 is the laser beam that the laser beam is divided into different proportion, and required setting ratio swashs Light is polarized by the Laser polarizers 310, and the laser beam is incident to the detection spectroscope 309, again to institute It states laser beam to be split, in order to subsequent a variety of different operations.
Optionally, the laser beam emitting device includes laser beam-shrinked mirror 307, is carried out suitable for the hot spot to the laser beam Scaling.Here, the laser beam emitting device further includes laser power monitor 308 and display 314, the laser power monitoring Device 308 and the display 314 communicate to connect.It should be noted that the laser beam is projected through the laser 301, so It is reflected into the laser parameter amplifier 302 by the reflecting mirror 313 afterwards, the laser parameter amplifier 302 is emitted to The decaying spectroscope 312, and it is divided into the laser for setting power proportions in the decaying spectroscope 312, the decaying light splitting Mirror 312 is that the laser beam is divided into the laser beam of different proportion, described in the laser of required setting ratio passes through Laser polarizers 310 are polarized, and the laser beam is emitted to the detection spectroscope 309, again to the laser beam It is split, here, the laser beam is divided into two beams, wherein a branch of laser beam is incident to the laser beam-shrinked mirror 307, it is in addition a branch of to be incident to the laser power monitor 308.The advantages of this arrangement are as follows by by a certain proportion of institute It states laser beam and is incident to the laser power monitor 308, and shown on the display 314, due to laser beam General power is certain, and another part is incident to the power of the laser beam of the laser beam-shrinked mirror 307 therefore is monitored.
Optionally, as shown in Figure 3 and Figure 4, the laser beam emitting device includes laser power stability device 306, is suitable for reducing The noise of the laser beam power.It should be noted that the laser beam is projected through the laser 301, then pass through The reflecting mirror 313 is reflected into the laser parameter amplifier 302, and the laser parameter amplifier 302 is emitted to described decline Deduction light microscopic 312, and it is divided into the laser for setting power proportions in the decaying spectroscope 312, described 312, decaying spectroscope It is the laser beam that the laser beam is divided into different proportion, the laser of required setting ratio passes through the laser polarization Device 310 is polarized, and the laser beam is emitted to the detection spectroscope 309, is split again to the laser beam, After wherein a branch of laser beam is incident to the laser beam-shrinked mirror 307, it is emitted to the laser power stability device 306, is passed through It is emitted to the fiber coupler 303 after crossing the laser power stability device 306, the laser beam passes through the fiber coupling After device 303, the actuating station is incident to by the optical fiber 304, to obtain the stable light-beam of suitable nano-manipulation and connection.
Example IV
Embodiment as described above, the different place of the present embodiment be, as shown in Figure 8 and Figure 9, the execution End includes optical fiber probe 319, and wherein one end of the optical fiber probe 319 is connect with the optical fiber 304, and other end is provided with directly Diameter is nanoscale aperture.It should be noted that since the optical fiber 304 is connect with the optical fiber probe 319, the laser light Beam is emitted after the optical fiber probe 319 from the aperture of 319 end of optical fiber probe, since the hole diameter is to receive Meter level can generate near field light after the laser beam is by the aperture.
Optionally, as shown in Figure 8 and Figure 9, the actuating station further includes tungsten needle 207, and the tungsten needle surface is coated with layer gold, institute It states tungsten needle 207 to be located in the irradiation range of the near field light, the tungsten needle 207 is suitable for enhancing the near field light.Here, The tungsten needle 207 can be replaced AFM probe 205, and the tungsten needle 207 and the AFM probe 205 are identical, have nanoscale needle Point.
As shown in Fig. 9 to Figure 12, the optical fiber probe 319 is connect with optical fiber probe connector 318, optical fiber probe connector Be arranged on 318 it is fluted, the optical fiber probe 319 can by way of grafting or bonding with the groove cooperate, by described Optical fiber probe connector 318 realizes that the optical fiber probe 319 is connect with actuating station operating device.
Here, the optical fiber probe 319 is connect by the optical fiber probe connector 318 with actuating station operating device, institute Stating actuating station operating device includes the first movement mechanism 203 and the second movement mechanism 204, and the optical fiber probe 319 passes through institute Stating optical fiber probe connector 318 can be achieved to connect with first movement mechanism 203 or second movement mechanism 204.It needs It is noted that be provided with screw thread or bolt on the optical fiber probe connector 318, in first movement mechanism 203 or The threaded hole to match with the screw thread or the grafting to match with the bolt are provided on second movement mechanism 204 Hole, to realize the optical fiber probe connector 318 on first movement mechanism 203 or second movement mechanism 204 Connection.
As shown in fig. 9 or 10, the tungsten needle 207 is connect with tungsten needle connector 206, is provided on tungsten needle connector 206 Mounting hole, the tungsten needle 207 can be connect by way of grafting or bonding with the mounting hole, and the tungsten needle connector is passed through 206 realize that the tungsten needle 207 is connect with actuating station operating device.
Here, the tungsten needle 207 is connect by the tungsten needle connector 206 with actuating station operating device, the actuating station Operating device includes the first movement mechanism 203 and the second movement mechanism 204, and the tungsten needle 207 passes through the tungsten needle connector 206 can be achieved to connect with first movement mechanism 203 or second movement mechanism 204.It should be noted that described Screw thread or bolt are provided on tungsten needle connector 206, on first movement mechanism 203 or second movement mechanism 204 It is provided with the threaded hole to match with the screw thread or the spliced eye to match with the bolt, to realize that the tungsten needle connects Connection of the fitting 206 on first movement mechanism 203 or second movement mechanism 204.
As shown in Figure 10, the AFM probe 205 is connect with AFM probe connector 208, is set on AFM probe connector 208 It is equipped with slot, the AFM probe 205 can be connect with the slot by way of grafting or bonding, be connected by the AFM probe Fitting 208 realizes that the AFM probe 205 is connect with actuating station operating device.
Here, the AFM probe 205 is connect by the AFM probe connector 208 with actuating station operating device, described Actuating station operating device includes the first movement mechanism 203 and the second movement mechanism 204, and the AFM probe 205 is described in AFM probe connector 208 can be achieved to connect with first movement mechanism 203 or second movement mechanism 204.It needs It is bright, it is provided with screw thread or bolt on the AFM probe connector 208, in first movement mechanism 203 or described The threaded hole to match with the screw thread or the spliced eye to match with the bolt are provided on two movement mechanisms 204, from And realize connection of the AFM probe connector 208 on first movement mechanism 203 or second movement mechanism 204.
Embodiment five
Embodiment as described above, the different place of the present embodiment are, as shown in figure 8, the actuating station packet It includes: optical fiber collimator 321 and tungsten needle 207；The optical fiber collimator 321 is connect with the optical fiber 304, is suitable for the laser light Beam is converted into directional light；The surface of the tungsten needle is coated with tungsten needle 207 described in layer gold and is located in the irradiation range of the laser beam, The needle point of the tungsten needle 207 is nano-grade size, and the tungsten needle 207 is suitable for generating near field light.Here, as shown in figure 8, the tungsten Needle 207 can be replaced AFM probe 205, and the tungsten needle 207 and the AFM probe 205 are identical, have nanoscale needle point.It needs Illustrate, since AFM probe 205 or tungsten needle 207 have the needle point of nano-scale can at needle point tip when laser irradiation Generate near field light.After converting directional light for the laser beam by the optical fiber collimator 321, compared to the utilization light Fine probe 319 is conducive to the field strength for improving near field light.
As shown in figs. 8 and 12, the optical fiber collimator 321 is connect with collimator connector 320, collimator connector Bayonet is provided on 320, the optical fiber collimator 321 can connect in such a way that grafting, clamping or screw fasten with the bayonet It connects, realizes that the optical fiber collimator 321 is connect with actuating station operating device by the collimator connector 320.Here, consider To the weight of the optical fiber collimator 321, the optical fiber collimator 321 is preferentially connect with first movement mechanism 203.
Embodiment six
Embodiment as described above, the different place of the present embodiment is, described to receive as shown in Fig. 6 to Figure 12 Rice operating device includes: the first movement mechanism 203, the second movement mechanism 204 and control device 107, first movement mechanism 203 have multiple translational degree of freedom and at least one rotary freedom, and second movement mechanism 204 has multiple rotations freely Degree and at least one translational degree of freedom are mounted on execution on first movement mechanism 203 and second movement mechanism 204 End, first movement mechanism 203 and second movement mechanism 204 are connected with the control device 107 respectively, the control Device 107 processed is suitable for controlling first movement mechanism 203 and second movement mechanism 204 drives the execution end motion, Carry out nano-manipulation.
As shown in figure 12, there are four freedom degrees for the tool of the first movement mechanism 203, wherein orthogonal flat with 3 Dynamic freedom degree and 1 rotational freedom.First movement mechanism 203 includes fixed block 216, the first sliding block 215, the second sliding block 214, third sliding block 213 and the first rotary connector 212, first sliding block 215 are slidably connected with the fixed block 216, institute Relatively described 216 side-to-side movement of fixed block driven by the driving device of the first sliding block 215 is stated, realizes the first translation；Described Two sliding blocks 214 are slidably connected with first sliding block 215, and second sliding block 214 is driven by the driving device relatively described First sliding block 215 moves forward and backward, and realizes the second translation；The third sliding block 213 is slidably connected with second sliding block 214, institute It states relatively described second sliding block 214 driven by the driving device of third sliding block 213 to move up and down, realizes third translation；It is described First rotary connector 212 is pivotally connected with the third sliding block 213, and the cross section of first rotary connector 212 is circle, It is driven by the driving device to realize the first rotation around center of circle rotation, connect since the actuating station is installed on first rotation On fitting 212, therefore, while 212 rotation of the first rotary connector, the actuating station is driven to rotate.It needs to illustrate It is that the driving device of translational degree of freedom and the first rotation is driven using piezoelectric actuator.In addition, up and down all around It is not to be the same as the side all around of nano-manipulation device in practice for the azimuthal coordinates system in Figure 12 Position, here only to facilitate description.
Alternatively, more translational degree of freedom or rotary freedom can also be used in first movement mechanism 203, still The three-dimensional space that the actuating station may be implemented by three translational degree of freedom is mobile, also can solve by a rotation The angle of the actuating station adjusts problem.
It should be noted that being provided with threaded hole or jack on first rotary connector 212, it is suitable for the tungsten needle 207, the installation of the optical fiber collimator 321, the AFM probe 205 or the optical fiber probe 319, by the AFM probe It is provided with the screw thread to match with the threaded hole or the bolt to match with the jack on connector 208, realizes the AFM The installation of probe connection 208, or by being provided with the spiral shell to match with the threaded hole on the collimator connector 320 Line or the bolt to match with the jack realize the connection of the collimator connector 320, or by connecting in the tungsten needle It is provided with the screw thread to match with the threaded hole or the bolt to match with the jack on part 207, realizes that the tungsten needle connects The connection of fitting 207, or by be provided on the optical fiber probe connector 318 screw thread to match with the threaded hole or The bolt to match with the jack realizes the connection of the optical fiber probe connector 318.
When installing the tungsten needle 207 or the AFM probe 205 on first movement mechanism 203, pass through described first Nano wire and nano particle are pushed to the position of setting by the three-dimensional motion of movement mechanism 203；When first movement mechanism When installing the optical fiber collimator 321 on 203, by the three-dimensional motion of first movement mechanism 203, by the fiber optic collimator Position occurs for the near field light that device 321 is moved to setting.
As shown in figure 11, second movement mechanism 204 has 4 freedom degrees, wherein 3 are rotary freedom and 1 Translational degree of freedom.Second movement mechanism 204 includes fixing piece 227, the first revolving part 211, the second revolving part 210, third Revolving part 209, first revolving part 211 are pivotally connected with the fixing piece 227, and first revolving part 211 is in driving device It is rotated under drive around the fixing piece 227, realizes the first rotation；Second revolving part 210 and 211 pivot of the first revolving part It connects, second revolving part 210 is driven by the driving device to be rotated around first revolving part 211, realizes the second rotation；The Three revolving parts 209 are pivotally connected with second revolving part 210, and the third revolving part 209 is column construction, the third revolving part 209 is driven by the driving device around central shaft rotation, realizes third rotation；The tungsten needle connector 206 and the third Revolving part 209 connects, and the tungsten needle 207 connect with the tungsten needle connector 206, and the tungsten needle connector 206 is in driving device Drive under drive the tungsten needle 207 along the tungsten needle 207 axial direction translation, formed the 4th translation.It should be noted that described First rotation, the second rotation and third rotation are driven by piezoelectric actuator, and the 4th translation is driven by piezoelectric actuator It is dynamic.
It should be noted that being provided with threaded hole or jack on the third revolving part 209, it is suitable for the tungsten needle 207, institute The installation for stating AFM probe 205 or the optical fiber probe 319, by be provided on the AFM probe connector 208 with it is described The screw thread that threaded hole matches or the bolt to match with the jack realize the installation of the AFM probe connector 208, or By being provided with the screw thread to match with the threaded hole on the tungsten needle connector 207 or being inserted with what the jack matched Pin, realizes the connection of the tungsten needle connector 207, or by being provided with and the spiral shell on the optical fiber probe connector 318 The screw thread that pit matches or the bolt to match with the jack realize the connection of the optical fiber probe connector 318.
When installing the tungsten needle 207 or the AFM probe 205 on second movement mechanism 204, pass through the first rotation Turn, the three-dimensional motion of second movement mechanism 204 is realized in the second rotation, third rotation and the 4th translation, by nano wire or receive Rice grain is pushed to the position of setting.
Optionally, the actuating station is tungsten needle 207 or AFM probe 205, and the control device 107 is suitable for controlling described the One movement mechanism 203 and second movement mechanism 204 drive the tungsten needle 207 or the AFM probe 205 to move respectively and are formed Micro- tweezers clamp nanostructure.The advantages of this arrangement are as follows respectively in first movement mechanism 203 and described The tungsten needle 207 or the AFM probe 205 are installed, due to the tungsten needle 207 or the AFM probe on two movement mechanisms 204 205 needle point is nanoscale, so that micro- tweezers are formed, when first movement mechanism 203 and second movement mechanism 204 With the use of when, realize clamping to the nano wire or nano particle；Respectively by first movement mechanism 203 and described The movement of second movement mechanism 204 increases the flexibility ratio of micro- tweezers.
Optionally, second movement mechanism 204 has two sets.It should be noted that two sets of second movement mechanisms 204 It can be used in conjunction with each other between a set of first movement mechanism 203.When two sets of cooperations of the second movement mechanism 204 make Used time installs the tungsten needle 207 or the AFM probe 205 simultaneously on two sets of second movement mechanisms 204 respectively, due to The needle point of the tungsten needle 207 or the AFM probe 205 is nanoscale, so that micro- tweezers are formed, so as to realize to described The clamping of nano wire or nano particle, while the third rotation is adjusted, make the rotation of two sets of second movement mechanisms 204 certainly It is rotated towards each other to a certain degree by degree, to increase the stability of clamping.
Optionally, as shown in Fig. 7, Fig. 9 and Figure 10, the nano-manipulation device further include: mounting rack, the mounting rack packet Link block 230, connecting rod 229 and mounting blocks 228 are included, the link block 230 and the mounting blocks 228 are solid by the connecting rod 229 It is fixed to connect, multiple installation positions are provided on the mounting blocks 228, one or more first movement mechanisms can be carried out simultaneously 203 and second movement mechanism 204 installation.Here, there are two the mounting racks or multiple, premise is not do It relates to.
Embodiment seven
Embodiment as described above, the different place of the present embodiment is, such as Fig. 7, Figure 13 and Figure 14 and institute Show, the nano-manipulation device further include: coarse positioning sample stage 201 is fixedly connected with fine positioning sample stage 202；It is described thick Positioning sample sample platform 201 has multiple translational degree of freedom and at least two rotary freedoms, and the coarse positioning sample stage 201 is suitable for band The fine positioning sample stage 202 is moved to move.
Preferably, there are two rotary freedom and three orthogonal translations are free for the tool of coarse positioning sample stage 201 Degree, one of them described rotary freedom of the coarse positioning sample stage 201 are suitable for driving described 202 turns of fine positioning sample stage Dynamic, another described rotary freedom of the coarse positioning sample stage 201 is suitable for tilting the fine positioning sample stage 202.Such as Shown in Figure 13 and Figure 14, the coarse positioning sample stage 201 includes pedestal 217, the 5th translational piece 218, the 6th translational piece 219, the Seven translational pieces 220, the 4th revolving part 222 and the 5th revolving part 221, the 5th translational piece 218 connect with the pedestal 217 sliding It connects, the relatively described pedestal 217 driven by the driving device of the 5th translational piece 218 moves forward and backward, and forms the 5th translation, institute The largest motion distance for stating the 5th translation is 125mm；6th translational piece 219 driven by the driving device relatively described Five translational pieces 218 move left and right, and form the 6th translation, the largest motion distance of the 6th translation is 125mm；7th translational piece 220 relatively described 6th translational pieces 219 driven by the driving device move up and down, and form the 7th translation, the 7th translation Largest motion distance be 50mm；4th revolving part 222 rotation tilts the 5th revolving part 221, forms the 4th rotation Turn, the 4th rotation is located in upper and lower anterior-posterior plane, and the maximum rotation angle of the 4th rotation is 90 °；5th rotation Turning part 221 is cylindrical structure, and the 5th revolving part 221 forms the 5th rotation around central shaft rotation.It needs to illustrate It is that by motor driven, Motion Resolution rate is 100nm for the 5th translation, the 6th translation, the 7th translation, the 4th rotation With the 5th rotation by motor driven, Motion Resolution rate is 100nm.In addition, here be all around phase up and down For the azimuthal coordinates system in Figure 14, it is not the same as the orientation all around of nano-manipulation device in practice, here Only to facilitate description.
As shown in Figure 13 and Figure 14, the 5th sliding slot is provided on the pedestal 217, the 5th translational piece 218 passes through institute It states the 5th sliding slot to connect with the pedestal 217, driven by the driving device, the 5th translational piece 218 is sliding along the described 5th Slot translation；Be provided with the 6th sliding slot on 5th translational piece 218, the 6th translational piece 219 by the 6th sliding slot with 5th translational piece 218 connection, driven by the driving device, the 6th translational piece 219 is translatable along the 6th sliding slot； The 7th sliding slot is provided on 6th translational piece 219, the 7th translational piece 220 passes through the 7th sliding slot and the described 6th Translational piece 219 connects, and driven by the driving device, the 7th translational piece 220 is translatable along the 7th sliding slot.
The advantages of this arrangement are as follows can realize the movement of three-dimensional space by 3 translational degree of freedom, the sample is moved The position of setting is moved, Primary Location is carried out；The fine positioning sample stage 202 is connect with the 5th revolving part 221, passes through The rotation of four revolving parts 222 tilts the fine positioning sample stage 202, provides convenience to find optimal electron beam imaging； The fine positioning sample stage 202 is rotated by 221 rotation of the 5th revolving part, optimal nanometer structure operation is found with this Angle；By tentatively being adjusted to the fine positioning sample stage 202, it is at optimal operating position, can be subtracted indirectly The moving distance of small fine positioning, to save equipment cost.
Optionally, such as Fig. 7, Figure 13 and Figure 14 and shown, the nano-manipulation device further includes fine positioning sample stage 202, There are three orthogonal translational degree of freedom, the fine positioning sample stage 202 is suitable for putting institute the tool of fine positioning sample stage 202 It states nanostructure and drives the nanostructure mobile.
As shown in figure 15, the fine positioning sample stage 202 have 3 orthogonal translational degree of freedom, attachment base 223, 8th translational piece 224, the 9th translational piece 225 and the tenth translational piece 226, the attachment base 223 and the 5th revolving part 221 are solid Fixed connection, the relatively described attachment base 223 driven by the driving device of the 8th translational piece 224 move forward and backward, and form the 8th Translation；Relatively described 8th translational piece, 224 side-to-side movement driven by the driving device of 9th translational piece 225 forms the Nine translations；Tenth translational piece 226 relatively described 9th translational piece 225 driven by the driving device moves up and down, and is formed Tenth translation.It should be noted that the described 8th is translatable, the 9th is translatable, the tenth translation is by motor or hydraulic-driven, movement divides Resolution is 0.5nm.In addition, here be all around not to be up and down for the azimuthal coordinates system in Figure 15 It is same as the orientation all around of nano-manipulation device in practice, here only to facilitate description.
The advantages of this arrangement are as follows the sample to be moved to the position of setting by the coarse positioning sample stage 201 It sets, carries out Primary Location；Then the sample is positioned by fine positioning sample stage.In addition, fine positioning sample is arranged herein The main function of sample platform is, the increase of the deflecting actuating station operation mobile by the three-dimensional of the fine positioning sample stage 202 The freedom degree of device can be carried out described by being used cooperatively for the fine positioning sample stage 202 and the actuating station operating device Movement after the push-and-pull of nano particle and the nano wire, clamping or clamping, convenient for the nano particle and the nano wire Connection, thus the covert flexibility ratio for increasing nano-manipulation.
Embodiment eight
Embodiment as described above, the different place of the present embodiment are that as shown in figure 16, the nanometer connects Device further includes electron beam transmitting and regulation module 102, is connected with the vacuum chamber 101, the electron beam transmitting and regulation Module 102 is also connected with the control device, the electron beam is emitted by the control device and regulate and control module 102 into Row control, electron beam transmitting and regulation module 102 are suitable for generating electron beam and are accelerated, deflected and focused, and pass through electronics 103 irradiation sample of beam object lens makes the sample excitation secondary electron and backscattered electron, to realize the real-time vision to sample Observation and the monitoring that sample micro/nano level pattern is processed.The nanometer attachment device further includes photodetector module 104, The photodetector module 104 is set to the side wall of the vacuum chamber 101, the photodetector module 104 and the control Device processed is connected, and the photodetector module 104 is suitable for collecting through the secondary electron and backscattered electron etc., realizes sample Product operation and the real-time vision observation of connection procedure, by adjust the photodetector module 104 can to sample chemical ingredient, Lattice structure is analyzed, and can also carry out photoluminescence spectrum, cathode-luminescence spectrum by adjusting the photodetector module 104 Test.The nanometer attachment device further includes electron beam object lens 103, and the electron beam object lens 103 are set in vacuum chamber 101 Portion, and emit with the electron beam and regulate and control module 102 and be connected, the electron beam object lens 103 are suitable for sample imaging magnification Scaling.
The nanometer attachment device further includes protective gas introducing device 105, and the protective gas introducing device 105 passes through Pipeline is connected with the vacuum chamber 101, and suitable for protective gas to be passed through in the vacuum chamber 101, the protective gas is introduced Device 105 is also connected with the control device, and the control of the protective gas introducing device 105 is realized by the control device System.When the vacuum chamber 101 is opened, protective gas can be oxidized and reduce outside air to avoid the sample to described Pollution inside vacuum chamber 101.The inert gases such as nitrogen can be used in protective gas.
The nanometer attachment device further includes CCD camera 106, and the CCD camera 106 is installed in the vacuum chamber 101, And be connected with the control device, the control device is suitable for obtaining the CCD camera 106 image detected and to described CCD camera 106 is adjusted, before using electron beam imaging, using the CCD camera 106 to detection probe module, sample stage The relative positions such as platform are observed, and carry out position adjustment to control sample stage and probe motion module.
Embodiment nine
A kind of near infrared light electrical part, as shown in Figure 17 and Figure 18, including silicon base 6, nanocomposite optical antenna 5, electrode and Nano wire 4, the electrode includes first electrode 3 and second electrode 7, wherein several nanocomposite optical antennas 5, the electrode are equal Be set to 6 surface of silicon base, several nanocomposite optical antennas 5 be located at the first electrode 3 and the second electrode 7 it Between, the both ends of the nano wire 4 are connect with the first electrode 3 and the second electrode 7 respectively, the nano wire 4 at least One nanocomposite optical antenna contact.
It should be noted that near infrared light electrical part described here is used to incude near infrared band, such as Figure 17 and Figure 18 institute Show, the structure of nanocomposite optical antenna 5 includes: big disk 1 and several roundels 2, and several roundels 2 are along the big disk 1 The setting of edge array, gap between the roundel 2 and the big disk 1 is d, and 1 diameter of big disk is 140nm- 160nm and preferred 150nm, the diameter of the peripheral roundel 2 are 80nm-120nm and preferred 100nm, the big disk 1 with Gap d between the roundel 2 is 10nm-20nm and preferred 15nm.Through measuring, the gap d is described close red in 15mm The effect of outer photoelectric device response near infrared band reaches best.It is respectively set in nanocomposite optical antenna area two sides described First electrode 3 and the second electrode 7, source electrode of the first electrode 3 as the near infrared light electrical part, second electricity Drain electrode of the pole 7 as the near infrared light electrical part, grid of the silicon base as the near infrared light electrical part.Usual feelings Under condition, array is provided with multiple nanocomposite optical antennas 5 between the first electrode 3 and the second electrode 7.Master of the present invention If using the gap between the big disk 1 and roundel 2 in same nanocomposite optical antenna 5 in illumination, can excite etc. from Sub- excimer can be captured and be enhanced to incident light, and the response wave length scope of device is widened, and improve carrier inside nano wire Concentration, and then improve the optically and electrically performance of device.
Wherein, the material of the electrode and the nanocomposite optical antenna is preferably gold, silver etc., the material of the nano wire 4 Preferably silicon nanowires, the nano wire 4 are welded with the electrode using nano particle, and the material of nano particle is preferably Gold, silver, copper nano particles.The near infrared light electrical part can respond the near infrared band of 750nm-1000nm, and photoelectric current is big, ring Should rate it is high, the response time is short.
Embodiment ten
A kind of processing method of near infrared light electrical part, as shown in figure 20, comprising:
S1: the substrate for having calibrating pattern is obtained.
S2: photoelectric device substrate is prepared using the substrate for having calibrating pattern, includes:
S21: has calibrating pattern side preparation electron beam glue layer in the substrate.Here, using sol evenning machine described Have uniform spin coating polymethyl methacrylate (PMMA C2) electron beam adhesive on the substrate of calibrating pattern, the sol evenning machine Rotation speed is 4000 revs/min, and spin-coating time is -75 seconds 45 seconds, and preferably 1 minute.
S22: heating the electron beam glue layer, solidifies the electron beam glue layer.Here, to the electron beam adhesive Layer is baked, and stoving temperature is 150 DEG C -200 DEG C and preferably 180 DEG C, and baking time is -18 minutes 12 minutes and preferably 15 points Clock.
S23: being exposed the electron beam glue layer, and exposure area covers the calibrating pattern.Here, it needs first to carry out The design of exposure area, generating system design using the nano-patterning using Electron-beam measuring and system of processing can cover completely Cover the square region of the calibrating pattern；Wherein, electron beam lithography parameter setting are as follows: acceleration voltage 30kV, amplification factor are 1200 times, electron beam current 68pA.
S24: development treatment removes the electron beam glue layer of the exposure area, obtains the photoelectric device substrate.Here, The substrate for having calibrating pattern described in being coated with, which is completely disposed in developer solution, to develop, methyl iso-butyl ketone (MIBK) in developer solution (MIBK): the mass ratio of M-phthalic acid (IPA) is 1:3, and developing time is 90 seconds；And using deionized water to developing regional into Row rinses, washing time 15s, is finally brushed using nitrogen gun developing regional, brushes the time for 1min, described in acquisition The substrate for having calibrating pattern.The developer solution taken herein is that inventor is voluntarily equipped with, and finds, shows after validation trial Shadow liquid uses the mixed solution of methyl iso-butyl ketone (MIBK) (MIBK) and M-phthalic acid (IPA), can effectively carry out to electron beam glue layer Removal, methyl iso-butyl ketone (MIBK) (MIBK): when the mass ratio of M-phthalic acid (IPA) is 1:3, the removal time can reach most short, go Except better effect.
S3: the photoelectric device substrate is placed in below electron beam object lens by beam alignment, the transmitting of adjustment electron beam and tune The parameter for controlling module 102, the clearly imaging until obtaining the calibrating pattern.The advantages of this arrangement are as follows in the light Calibrating pattern is portrayed in electrical part substrate, and carries out the calibration of electron beam using the calibrating pattern, improves the accurate of calibration Degree, it is subsequent directly to process optoelectronic device structure in the photoelectric device substrate.
S4: optoelectronic device structure is prepared, comprising:
S41: the parameter constant of electron beam transmitting and regulation module 102 is kept, described by way of electron beam exposure Portraying for optoelectronic device structure pattern is carried out in electron beam glue layer outside exposure area.Wherein, electron beam lithography parameter setting are as follows: Beam voltage 30kV, amplification factor are 1200 times, electron beam current 68pA.Here, as shown in figure 18, here, institute Stating optoelectronic device structure pattern includes two electrode patterns and the nanocomposite optical antenna diagram between two electrode patterns Case, while nanocomposite optical antenna pattern and electrode pattern are portrayed, it avoids unnecessary caused by repeatedly being portrayed Trouble.
S42: development treatment removes the electron beam glue layer of the optoelectronic device structure area of the pattern.Here, it will portray It states photoelectric device substrate and is completely disposed in developer solution and develop, methyl iso-butyl ketone (MIBK) (MIBK) in developer solution: M-phthalic acid (IPA) mass ratio is 1:3, and developing time is 90 seconds；And developing regional is rinsed using deionized water, washing time is 15s finally brushes developing regional using nitrogen gun, and brushing the time is 1min.
S43: layer gold is deposited in the optoelectronic device structure area of the pattern.Ability institute is carried out using high-temperature vacuum thermal evaporation apparatus State the vapor deposition that developing regional carries out golden material, the vapor deposition voltage of golden material is 2.1V, evaporation rate 1.2nm/s, with a thickness of 30nm。
S44: all electron beam glue layers of removal complete the preparation of optoelectronic device structure.Here, by the electron beam school Quasi- glue-line is completely disposed in acetone soln, is impregnated about 2 hours under conditions of temperature is 75 DEG C.Here, the photoelectric device knot Structure includes two electrodes and the nanocomposite optical antenna between two electrodes.
The advantages of this arrangement are as follows calibrate to electron beam transmitting and regulation module 102 by calibrating pattern laggard The shape of the preparation of row optoelectronic device structure, the disk of nanocomposite optical antenna structure is complete, and nanometer disk border is neat and nothing Other residual impurities, the gap size between different nanometer disks is uniform, and gap reaches 15nm.In addition, parametric calibration retraction The time for exposure is greatly shortened compared to traditional time for exposure in short beam exposure times.
S5: the nano wire and the electrode are attached as solder flux using nano particle, and make the nano wire It is contacted with the nanocomposite optical antenna.Here, the both ends of the nano wire are connect with two electrodes respectively, while described being received Rice noodles are contacted with the nanocomposite optical antenna, source electrode and leakage of two electrodes respectively as the near infrared light electrical part Pole, grid of the silicon base as the near infrared light electrical part.
Optionally, the nanocomposite optical antenna pattern is nano-optical antenna array pattern, the nanocomposite optical antenna array Column pattern includes multiple nanocomposite optical antenna patterns.
The advantages of this arrangement are as follows emitting by the electron beam after calibration and regulating and controlling module 102, while carrying out multiple receive The manufacture of rice antenna structure, shortens the time for exposure, the beam exposure times for surveying 315 nanocomposite optical antenna patterns are only 1.7 the second.
Optionally, described obtain has the substrate of calibrating pattern and includes:
S11: beam alignment glue-line is coated in substrate surface.Here, using sol evenning machine, uniform spin coating is poly- on silicon wafer Methyl methacrylate (PMMA C2) electron beam adhesive, the rotation speed of the sol evenning machine are 4000 revs/min, spin-coating time 45 - 75 seconds seconds, and preferably 1 minute.
S12: heating the beam alignment glue-line, makes the beam alignment curable adhesive layer.Here, to described Beam alignment glue-line is baked, stoving temperature be 150 DEG C -200 DEG C and preferably 180 DEG C, baking time for 12 minutes -18 points Clock and preferably 15 minutes.
S13: the design of calibrating pattern is carried out.System is generated using the nano-patterning of industrial personal computer to set calibrating pattern Meter, in order to improve calibration accuracy, calibrating pattern uses one or several nanocomposite optical antenna structures.
S14: the parameter of first successive step adjustment electron beam transmitting and regulation module 102, the transmitting of control electron beam and regulation mould Block 102 carries out portraying for the calibrating pattern on the beam alignment glue-line by way of electron beam exposure.Wherein, electric Beamlet photolithographic parameters setting are as follows: acceleration voltage 30kV, amplification factor are 1200 times, electron beam current 68pA.
S15: development treatment removes the quasi- glue glue-line of electron beam of exposure area.Here, it is coated with the quasi- glue of the electron beam The silicon wafer of glue-line, which is placed in developer solution, to develop, methyl iso-butyl ketone (MIBK) (MIBK) in developer solution: the matter of M-phthalic acid (IPA) For amount than being 1:3, developing time is 90 seconds；And developing regional is rinsed using deionized water, washing time 15s, finally Developing regional is brushed using nitrogen gun, brushing the time is 1min, obtains the calibrating pattern.
S16: layer gold is deposited in the calibrating pattern region.Here, golden material is carried out using high-temperature vacuum thermal evaporation apparatus Vapor deposition, using titanium material as adhesive layer, the adhesive layer is suitable for the connection of golden material and silicon wafer.Experiment condition is deposited are as follows: titanium The vapor deposition voltage of material be 3V, evaporation rate 1.2nm/s, titanium material with a thickness of 2nm；The vapor deposition voltage of golden material is 2.1V, evaporation rate 1.2nm/s, golden material with a thickness of 30nm.Due to gold it is expensive, herein use the conduct of titanium material Adhesive layer improves the adhesiving effect of gold, and on the other hand, using titanium material as adhesive layer, titanium material itself has certain Thickness, it is possible to reduce the dosage of golden material.
S17: all beam alignment glue-lines are removed, have the substrate of calibrating pattern described in acquisition.It here, will be described Beam alignment glue-line is completely disposed in acetone soln, is impregnated about 2 hours under conditions of temperature is 75 DEG C.It needs to illustrate It is that prepare here is only the substrate for having calibrating pattern, the substrate for having calibrating pattern here has met light Learn the structure of antenna, but the precision of itself is not able to satisfy the requirement of high-precision nano-antenna, here, only as Calibrating pattern emits the electron beam and regulates and controls module 102 and calibrates, and is 120k times of lower adjustment electron beam in amplification factor The parameters such as aberration, it is ensured that observe that nanocomposite optical antenna structure edge details are high-visible.
Specifically operation is that the photoelectric device substrate is fixed on 202 on fine positioning sample stage in S3 step；It closes true Cavity 101 vacuumizes the vacuum chamber 101；Environment in the vacuum chamber 101 is seen by CCD camera 106 It surveys, adjusts coarse positioning sample stage 201, the photoelectric device substrate is made to be moved to setting position；Open electron beam transmitting and regulation The imaging function of module 102 adjusts the fine positioning sample stage 202 and electron beam transmitting and regulation module 102, makes described Photoelectric device substrate shows in display device 108 to be clearly imaged, and is completed the electron beam transmitting and is regulated and controled module 102 Calibration.The advantages of this arrangement are as follows carrying out vacuumize process to the vacuum chamber 101 in calibration, electron beam is made to be in true In empty working environment, the precision of electron beam is improved；Here, in order to increase the space nargin of the fine positioning sample stage 202, First the coarse positioning sample stage is moved, adjusts the photoelectric device substrate first to setting position, which makes described Photoelectric device substrate is located at immediately below electron beam object lens 103, is then finely adjusted by the fine positioning sample stage 202.It is described The parameters of electron beam transmitting and regulation module 102 are that beam voltage is 30kV, and amplification factor is 1200 times, electronics Beam current is 68pA.
In S41 step, after completing the portraying of the optoelectronic device structure pattern, the electron beam transmitting and regulation mould are closed Block 102, and unloading vacuum is carried out to the vacuum chamber 101, protective gas introducing device 105 is opened simultaneously, protective gas is led to Enter in the vacuum chamber 101, then open hatch door, takes out sample.The advantages of this arrangement are as follows when the vacuum chamber 101 is beaten When opening, protective gas can be oxidized and reduce outside air to avoid the sample to the pollution inside the vacuum chamber 101.
It should be noted that the present embodiment completes the preferable of near infrared light electrical part preparation just with nanometer attachment device Embodiment, nanometer attachment device can also complete the preparation of near infrared light electrical part by other means, what the present embodiment had Benefit is being described above, is not repeated herein.Therefore, the present embodiment does not constitute the limitation to nanometer attachment device.
Certainly, the processing of nano-antenna or nano-electrode can also be individually carried out using this method, it is only necessary to by phototube Part structure plan replaces with nano-antenna or nano-electrode pattern, the nano-electrode processed and the photoelectricity processed The beneficial effect of device architecture is identical.
Embodiment 11
A kind of operation of nano wire and connection method, as shown in figure 21, comprising:
S1: obtaining nano particle cluster and nano wire is scattered in the substrate of silicon chip surface；It should be noted that the nanometer Particle clusters include several nano particles, and the dispersion of nano particle is dispersed with the nano particle cluster theme, not individually Single nanoparticle is moved.
S2: the substrate is fixed on fine positioning sample stage 202, adjust electron beam object lens 103 and electron beam transmitting and Regulate and control module 102, mobile example platform carries out the positioning of the substrate；
S3: the electron beam object lens 103 and electron beam transmitting and regulation module 102 are adjusted, mobile example platform is to mesh Mark nano wire is positioned；
S4: the electron beam object lens 103 and electron beam transmitting and regulation module 102 are adjusted, is operated using actuating station Device drives actuating station to move the target nano wire；
S5: the electron beam object lens 103 and electron beam transmitting and regulation module 102 are adjusted, is filled using nano-manipulation It sets and target nanoparticle cluster is positioned；
S6: the electron beam object lens 103 and electron beam transmitting and regulation module 102, mobile actuating station operation are adjusted Device drives actuating station to move the target nanoparticle cluster, and repeats S5-S6 according to this, and multiple targets are received Rice grain cluster is moved to the different junctions of the nano wire；
S7: optical near-field generating apparatus is opened, using near field light as heat source, using the target nanoparticle cluster conduct Solder flux carries out the connection between the different target nano wires.
It should be noted that the acquisition nano particle described in S1 and nano wire are uniformly distributed in the substrate of silicon chip surface Include: S11: the silicon wafer is cleaned.Here, the silicon wafer is placed in the vial equipped with deionized water, then will It is placed in supersonic cleaning machine and is cleaned by ultrasonic in vial, the ultrasonic cleaning time is 10-20 minutes and preferably 15 minutes；It takes Then the silicon wafer is placed in the vial equipped with acetone soln by the silicon wafer out, carry out twice ultrasonic cleaning, twice ultrasonic A length of 12-18 minutes and preferably 15 minutes when cleaning.The silicon wafer after taking out cleaning, with nitrogen air gun to the silicon chip surface It is brushed, the silicon wafer that surface is adhered to without subtle sundries is obtained, if surface repeats the above steps there are apparent spot It cleans again.Here deionized water and acetone soln, which is respectively adopted, is successively advantageous in that the tiny pollution of removal to Wafer Cleaning Object and granule foreign.
S12: the dispersion of nano particle cluster and nano wire.Firstly, the outfit of nano-solution is carried out, using precise electronic day It is flat to weigh proper amount of nano particle and nano wire, alcohol and weighed nano particle and nano wire are mixed in plastic ware, it will The plastic ware, which is placed in supersonic wave cleaning machine, carries out ultrasonic treatment 15 minutes, obtains mixed solution；Take the mixed solution It is placed in vial, carries out ultrasonic treatment again 15 minutes.It should be noted that being needed constantly more in ultrasonication The aqueous solution in supersonic cleaning machine is changed, guarantees the water temperature in ultrasonication at 30 degrees Celsius or less.Then, nanometer is carried out The spin coating of grain cluster and nano wire draws nano-solution using pipettor, drips a little solution to the silicon wafer after the cleaning of S11 step On, silicon wafer is placed on sol evenning machine, drop is had the solution of nano particle cluster and nano wire enterprising in silicon wafer by setting different rotating speeds The uniform spin coating of row, is finally prepared the substrate of evenly dispersed nano wire and nano particle cluster.Herein, nano particle cluster Using silver nano-grain, nano wire uses carbon nanotube, and nano wire and nano particle respectively take 0.1-0.3mg, alcoholic solution 100ml.It should be noted that nano particle cluster can also use silver nano-grain and copper nano particles, nano wire can also be with Using zinc oxide nanowire and silicon nanowires, wherein the diameter of nano particle is less than 20nm, and the diameter of nano wire is greater than 100nm.
Here, be ultrasonically treated in S11 step and S12 step, the purpose of the ultrasonic treatment in S11 step be It is that nano-solution is made to generate exciting by ultrasound in the purpose that the silicon wafer is cleaned, and is ultrasonically treated in S12, makes two Person is uniformly mixed, compared to by the way of stirring, this method can avoid nano wire and nano particle cluster in tradition Damage.It is first that frosting is coarse using the purpose that plastic ware is operated, frictional force is larger, can shorten ultrasonic treatment Time, and use vial purpose be that glass bottle surface is smooth, reduce nano particle and nano wire adherency, glass material Expect that heating conduction is preferable, avoid temperature in vial excessively high, nano particle and nano wire is made to generate denaturation.
Between S1 step and S2 step, further includes: the substrate is fixed on fine positioning sample stage 202, is carried out true The vacuumize process of cavity 101；Vacuum chamber 101 is closed, and the vacuum chamber 101 is vacuumized.The benefit being arranged in this way It is, vacuumize process is carried out to the vacuum chamber 101 in calibration, is in electron beam in the working environment of vacuum, is improved The precision of electron beam imaging.
In S2 step, the positioning for carrying out the substrate using coarse positioning sample stage 201 and fine positioning sample stage 202 is walked Suddenly include: to be observed by CCD camera 106 to environment in the vacuum chamber 101, adjust coarse positioning sample stage 201, make described Substrate is moved to setting position；The imaging function for opening electron beam transmitting and regulation module 102, adjusts the fine positioning sample stage 202, electron beam object lens 103 and electron beam transmitting and regulation module 102, make nano wire and the nano particle group of the substrate Cluster shows in display device 108 to be clearly imaged.Here, in order to increase the space nargin of the fine positioning sample stage 202, First the coarse positioning sample stage is moved, adjusts the nanocomposite optical antenna substrate first to setting position, which makes The nanocomposite optical antenna substrate is located at immediately below electron beam object lens 103, is then carried out by the fine positioning sample stage 202 micro- It adjusts.In actual mechanical process, first adjust coarse positioning sample stage 201, make the upper surface of substrate apart from electron beam object lens 103 just under At square 10-15mm；The imaging function of electron beam transmitting and regulation module 102 is opened, setting electron beam emits and regulation module 102 In beam voltage be 5-10KeV, adjust electron beam object lens 103 amplification factor, amplification factor is at 2000-5000 times Between, it shows the nano wire of the substrate and nano particle cluster in display device 108 and is clearly imaged.
In S3 step using using nano-manipulation device to target nano wire carry out positioning step include: adjust it is described thick fixed The rotary freedom of position sample stage 201, tilts the fine positioning sample stage 202, tilt angle α, and α is in 5- in practical operation Between 10 °；The fine positioning sample stage 202 is adjusted, the center that target nano wire is located at imaging view is chosen；Adjust electronics Beam object lens 103 and electron beam transmitting and regulation module 102, show the target nano wire in display device 108 clearly Imaging.Here, it adjusts electron beam object lens 103 to be to increase the amplification factor of electron beam object lens 103, amplification factor is in 5000- Between 15000 times, adjusts electron beam transmitting and regulation module 102 is to adjust the electron beams correlations such as the acceleration voltage of electron beam ginseng Number.The advantages of this arrangement are as follows passing through the special rotary freedom of coarse positioning sample stage here, fine positioning sample stage is made first to incline Oblique angle appropriate, makes AFM probe be in preferable work angle, is convenient for succeeding target nano wire and target nanoparticle cluster Movement.
Carrying out moving step to target nano wire using actuating station operating device described in S4 includes: to adjust electron beam object lens 103, the amplification factor of electron beam object lens 103 is reduced, the amplification factor of electron beam object lens 103 is between 2000-5000 times here； Here, AFM probe is installed on second movement mechanism, the second movement mechanism 204 is controlled, makes AFM probe constantly close to mesh Nano wire is marked, the electron beam object lens 103 and electron beam transmitting and regulation module 102 are adjusted, until making the AFM probe Needle point and the target nano wire show in display device 108 and be clearly imaged, here, the needle of the AFM probe The sharp minimum range with the target nano wire is 10nm, captures the needle point of the AFM probe and the work of the target nano wire Use position；The second movement mechanism is controlled, the needle point of the AFM probe is made to be moved to the active position of the target nano wire, and Push the target nano wire to link position；Above-mentioned steps are repeated in, by the head and the tail of the different target nano wires Both ends are connected to each other, as shown in figure 19.
Carrying out positioning step to target nanoparticle cluster using nano-manipulation device described in S5 step includes: to adjust institute Fine positioning sample stage 202 is stated,；Choose the center that target nanoparticle cluster is located at imaging view；Adjust electron beam object lens 103 and electron beam transmitting and regulation module 102, show the target nanoparticle cluster in display device 108 clearly Imaging.Here, it adjusts electron beam object lens 103 to be to increase the amplification factor of electron beam object lens 103, amplification factor is in 5000- Between 15000 times, adjusts electron beam transmitting and regulation module 102 is to adjust the electron beams correlations such as the acceleration voltage of electron beam ginseng Number.
Moving step is carried out to target nanoparticle cluster using actuating station operating device described in S6 step；It include: to adjust Economize on electricity beamlet object lens 103, reduces the amplification factor of electron beam object lens 103, the amplification factor of electron beam object lens 103 exists here Between 2000-5000 times；The second movement mechanism is controlled, AFM probe is made constantly close to target nanoparticle cluster, to adjust the electricity Beamlet transmitting and regulation module 102, until filling the needle point of the AFM probe and the target nanoparticle cluster in display It sets to show on 108 and clearly be imaged, here, the most narrow spacing of the needle point of the AFM probe and the target nanoparticle cluster From for 10nm, the needle point of the AFM probe and the active position of the target nanoparticle cluster are captured；Control the second fitness machine Structure makes the needle point of the AFM probe be moved to the active position, and pushes the target nanoparticle cluster to the target At the docking of nano wire；Above-mentioned steps are repeated in, so that multiple target nanoparticle clusters is wrapped up the adjacent target and receives At the docking of rice noodles, as shown in figure 19.
Here, first the substrate is positioned, then the target nano wire or target nanoparticle cluster is carried out Positioning carries out the positioning of target nano wire or target nanoparticle cluster on the basis of substrate positioning, avoid directly into Focusing caused by row target nano wire or the positioning of target nanoparticle cluster is difficult, improves focusing efficiency.
It is carried out different as heat source using the target nanoparticle cluster as solder flux in S7 step using near field light Connection Step between the target nano wire includes:
The second movement mechanism is controlled, is located at the needle point of the AFM probe at the docking of the target nano wire, here, It is located at the needle point of the AFM probe on all target nanoparticle clusters, and most with the target nanoparticle cluster Small distance is 1-5nm.
Laser beam emitting device is opened, adjusts the laser parameters such as laser power, wavelength, here, laser power is set as 10- 65mW, optical maser wavelength are set as 808nm, the angle of control the first movement mechanism adjustment optical fiber probe and position, make laser from institute The target nanoparticle cluster that optical fiber probe is emitted at the target nano wire docking is stated, and makes the needle point of the AFM probe In the range of laser irradiation.At this point, near field can be generated between the needle point and target nanoparticle cluster of the AFM probe Light can be melted target nanoparticle cluster, and then by controlling near field light action time 1-5min by two root object nanometers Line connection.Here, target nanoparticle cluster serves as connection medium, by the thawing of nano particle cluster realize it is different described in Connection between target nano wire.Here by mobile second movement mechanism to drive the AFM probe to different skies Between position, realize the movement of nano wire and nano particle cluster, auxiliary realizes the generation of near field light.
The advantage of this embodiment is that by uniformly dividing after mixing nano wire and nano particle cluster according to a certain percentage It dissipates in silicon chip surface, avoids the phenomenon that excessively concentrating or excessively evacuate caused by direct coated with nano line and nano particle cluster Generation, improve nano wire operation and connection efficiency；It, can be more by the cooperation of coarse positioning platform and fine positioning platform Efficiently nano particle cluster and nano wire are captured, improve the efficiency of nano wire operation；By coarse positioning platform with The cooperation of second movement mechanism keeps the operation of AFM probe more convenient, improves the efficiency of nano wire operation；By by far field Light is converted near field light, and the connection of nano particle cluster is carried out using near field light, avoids the active area of laser excessive, causes The damage of nano wire and nano particle improves the quality of connection of nano wire.
After completing the interconnection between the different nano wires using the nano particle, close the electron beam transmitting and Regulate and control module 102, and unloading vacuum is carried out to the vacuum chamber 101, opens simultaneously protective gas introducing device 105, will protect Gas is passed through in the vacuum chamber 101, then opens hatch door, takes out sample.The advantages of this arrangement are as follows when the vacuum chamber When 101 opening, protective gas can be oxidized and reduce outside air to avoid the nano wire and nano particle to the vacuum Pollution inside chamber 101.
It should be noted that the present embodiment just with nanometer attachment device complete different nano wires operate and connection compared with Good embodiment, nanometer attachment device can also complete the connection of different nano wires by other means, and the present embodiment has good Place is being described above, is not repeated herein.Therefore, the present embodiment does not constitute the limitation to nanometer attachment device.
Embodiment 11
A kind of connection method of nano wire and electrode, such as Figure 22, comprising:
S1: obtaining nano particle cluster and nano wire is scattered in the silicon base of silicon chip surface, and nano-electrode has been portrayed in acquisition Electrode basement, the silicon base and the electrode basement are fixed on fine positioning sample stage 202 simultaneously；
S2, adjusts electron beam object lens 103 and electron beam transmitting and regulation module 102, mobile example platform carry out the silicon substrate The positioning at bottom；
S3: electron beam object lens 103 and electron beam transmitting and regulation module 102 are adjusted, mobile example platform is to target nano wire It is positioned；
S4: the electron beam object lens 103 and electron beam transmitting and regulation module 102 are adjusted, is operated using actuating station Device drives actuating station to clamp the target nano wire；
S5: mobile example platform drives the electrode basement mobile, and two target electrodes is made to be located at the target nanometer The underface at the both ends of line, mobile nano-manipulation device, the target nano wire is placed on electrode structure；
S6: adjusting electron beam object lens 103 and electron beam transmitting and regulation module 102, mobile example platform drive the silicon substrate Bottom is mobile, positions to target nanoparticle cluster；
S7: the electron beam object lens 103 and electron beam transmitting and regulation module 102 are adjusted, is operated using actuating station Device drives actuating station to clamp the target nanoparticle cluster；
S8: mobile nano-manipulation device band moving electrode substrate is mobile, and the electrode basement is made to be located at the target nanometer Immediately below grain cluster, the target nanoparticle cluster is moved to the target nano wire and electricity by mobile nano-manipulation device The junction of pole, and S5-S7 step is repeated according to this；
S9: opening optical near-field generating apparatus, using near field light as heat source, using the nano particle cluster as weldering Agent carries out the connection between the nano wire and the electrode.
It portrays the electrode basement step of nano-electrode it should be noted that being obtained in S1 step and includes:
S11: electron beam glue layer is coated in silicon chip surface.Here, using sol evenning machine on silicon wafer the poly- methyl of uniform spin coating Methyl acrylate (PMMA C2) electron beam adhesive, the rotation speed of the sol evenning machine are 4000 revs/min, and spin-coating time is 45 seconds -75 Second, and preferably 1 minute.
S12: the electron beam school layer is heated, the electron beam glue layer is solidified.Here, to the electron beam adhesive Layer is baked, and stoving temperature is 150 DEG C -200 DEG C and preferably 180 DEG C, and baking time is -18 minutes 12 minutes and preferably 15 points Clock.
S13: the design of nano-electrode pattern is carried out.Using industrial personal computer nano-patterning generate system to electrode structure into Row design.
S14: the parameter of first successive step adjustment electron beam transmitting and regulation module 102, the transmitting of control electron beam and regulation mould Block 102 carries out portraying for the nano-electrode pattern by way of electron beam exposure in the electron beam glue layer.Wherein, electric Beamlet photolithographic parameters setting are as follows: acceleration voltage 30kV, amplification factor are 1200 times, electron beam current 68pA.
S15: development treatment removes the electron beam glue layer of exposure area.Here, it is coated with the silicon of the electron beam glue layer Piece, which is placed in developer solution, to develop, methyl iso-butyl ketone (MIBK) (MIBK) in developer solution: the mass ratio of M-phthalic acid (IPA) is 1: 3, developing time is 90 seconds；And developing regional is rinsed using deionized water, washing time 15s, finally use nitrogen Rifle brushes developing regional, and brushing the time is 1min, obtains the nano-electrode pattern.
S16: layer gold is deposited in the nano-electrode area of the pattern.Here, gold is carried out using high-temperature vacuum thermal evaporation apparatus Material vapor deposition, using titanium material as adhesive layer, the adhesive layer is suitable for the connection of golden material and silicon wafer.Experiment condition is deposited Are as follows: the vapor deposition voltage of titanium material be 3V, evaporation rate 1.2nm/s, titanium material with a thickness of 2nm；The vapor deposition voltage of golden material For 2.1V, evaporation rate 1.2nm/s, golden material with a thickness of 30nm.Due to gold it is expensive, herein using titanium material make For adhesive layer, the adhesiving effect of gold is improved, on the other hand, using titanium material as adhesive layer, titanium material itself has centainly Thickness, it is possible to reduce the dosage of golden material.
S17: all electron beam glue layers are removed, have the electrode basement of nano-electrode pattern described in acquisition.Here, will The electron beam glue layer is completely disposed in acetone soln, is impregnated about 2 hours under conditions of temperature is 75 DEG C.
S1 step includes: the cleaning of silicon wafer and the dispersion of nano particle cluster and nano wire.The silicon wafer is cleaned, Here, the silicon wafer is placed in the vial equipped with deionized water, then will be placed in vial in supersonic cleaning machine into Row ultrasonic cleaning, ultrasonic cleaning time are 10-20 minutes and preferably 15 minutes；The silicon wafer is taken out, then sets the silicon wafer In the vial equipped with acetone soln, twice ultrasonic cleaning is carried out, twice ultrasonic is a length of 12-18 minutes and preferably 15 when cleaning Minute.The silicon wafer after taking out cleaning, brushes the silicon chip surface with nitrogen air gun, obtains surface without subtle sundries The silicon wafer of attachment, if surface there are apparent spot, repeats the above steps and cleans again.Here deionization is respectively adopted Water and acetone soln, which are successively advantageous in that Wafer Cleaning, removes tiny pollutant and granule foreign.
The dispersion of nano particle cluster and nano wire: firstly, carrying out the outfit of nano-solution, claimed using precision electronic balance Proper amount of nano particle clusters and nano wire are taken, alcohol and weighed nano particle cluster and nano wire are mixed in plastic ware In, the plastic ware is placed in supersonic wave cleaning machine and carries out ultrasonic treatment 15 minutes, obtains mixed solution；Take the mixing Solution is placed in vial, carries out ultrasonic treatment again 15 minutes.It should be noted that being needed not in ultrasonication Aqueous solution in disconnected replacement supersonic cleaning machine, guarantees the water temperature in ultrasonication at 30 degrees Celsius or less.Then, it is received The spin coating of rice grain cluster and nano wire draws nano-solution using pipettor, drips a little solution to after the cleaning of S11 step On silicon wafer, silicon wafer is placed on sol evenning machine, drop is had the solution of nano particle cluster and nano wire in silicon wafer by setting different rotating speeds It is upper to carry out uniform spin coating, the substrate of evenly dispersed nano wire and nano particle cluster is finally prepared.Herein, nano particle Cluster uses silver nano-grain, and nano wire uses carbon nanotube, and nano wire and nano particle respectively take 0.1-0.3mg, alcoholic solution 100ml.It should be noted that nano particle cluster can also use silver nano-grain and copper nano particles, nano wire can also be with Using zinc oxide nanowire and silicon nanowires, wherein the diameter of nano particle is less than 20nm, and the diameter of nano wire is greater than 100nm.
Here, be ultrasonically treated in S11 step and S12 step, the purpose of the ultrasonic treatment in S11 step be It is that nano-solution is made to generate exciting by ultrasound in the purpose that the silicon wafer is cleaned, and is ultrasonically treated in S12, makes two Person is uniformly mixed, compared to by the way of stirring, this method can avoid the damage of nano wire and nano particle in tradition It is bad.The purpose first operated using plastic ware is that frosting is coarse, and frictional force is larger, can shorten ultrasonic treatment when Between, and the purpose for using vial is that glass bottle surface is smooth, reduces the adherency of nano particle and nano wire, glass material is led Hot property is preferable, avoids temperature in vial excessively high, and nano particle and nano wire is made to generate denaturation.
Between S1 step and S2 step, further includes: carry out the vacuumize process of vacuum chamber 101: vacuum chamber 101 is closed, and The vacuum chamber 101 is vacuumized.The advantages of this arrangement are as follows take out to the vacuum chamber 101 in calibration true Vacancy reason, is in electron beam in the working environment of vacuum, improves the precision of electron beam imaging.
In S2 step, environment in the vacuum chamber 101 is observed by CCD camera 106, adjusts coarse positioning sample stage 201, so that the silicon base is moved to setting position；It opens electron beam transmitting and regulates and controls the imaging function of module 102, described in adjusting Fine positioning sample stage 202, electron beam object lens 103 and electron beam transmitting and regulation module 102, make the nanometer of the silicon base Line and nano particle cluster show in display device 108 to be clearly imaged.Here, in order to increase the fine positioning sample stage 202 space nargin first moves the coarse positioning sample stage, adjusts the electrode basement first to setting position, should Position is located at the electrode basement immediately below electron beam object lens 103, is then carried out by the fine positioning sample stage 202 micro- It adjusts.In actual mechanical process, first adjust coarse positioning sample stage 201, make the upper surface of substrate apart from electron beam object lens 103 just under At square 10-15mm；The imaging function of electron beam transmitting and regulation module 102 is opened, setting electron beam emits and regulation module 102 In beam voltage be 5-10KeV, adjust electron beam object lens 103 amplification factor, amplification factor is at 2000-5000 times Between, it shows the nano wire of the silicon base and nano particle cluster in display device 108 and is clearly imaged.
S3 step includes: the rotary freedom for adjusting the coarse positioning sample stage 201, makes the fine positioning sample stage 202 It tilts, tilt angle α, α is between 5-10 ° in practical operation；The fine positioning sample stage 202 is adjusted, target nanometer is chosen Line is located at the center of imaging view,；Electron beam object lens 103 and electron beam transmitting and regulation module 102 are adjusted, the mesh is made Mark nano wire shows in display device 108 to be clearly imaged.Here, electron beam object lens 103 are adjusted to be to increase electron beam The amplification factor of object lens 103, amplification factor adjust electron beam transmitting and regulation module 102 are between 5000-15000 times Adjust the electron beams relevant parameters such as the acceleration voltage of electron beam.The advantages of this arrangement are as follows passing through coarse positioning sample stage here Special rotary freedom makes fine positioning sample stage first tilt angle appropriate, and AFM probe is made to be in preferable work angle, Convenient for the movement of subsequent nano wire and nano particle cluster.
It includes: to adjust electricity that S4 step, which includes: using the actuating station operating device drive actuating station clamping target nano wire, Beamlet object lens 103 reduce the amplification factor of electron beam object lens 103, and the amplification factor of electron beam object lens 103 is in 2000- here Between 5000 times；Here, first movement mechanism 203 has two sets, second movement mechanism 204 have it is a set of, respectively at it In AFM probe is installed on two sets of first movement mechanisms 203, tungsten needle is installed on second movement mechanism 204, by described Two set of first movement mechanism 203 is mobile by the AFM probe respectively, makes AFM probe constantly close to target nano wire, until making institute The needle point and the target nano wire for stating AFM probe are showed in display device 108 and are clearly imaged, here, two sets of institutes The minimum range of the needle point and the target nano wire of stating AFM probe is 10nm, captures the needle point and the mesh of the AFM probe Mark the active position of nano wire；First movement mechanism is controlled, the needle point of two sets of AFM probes is made to be moved to the target The active position of nano wire makes the needle point of two AFM probes form tweezers, the target nano wire is clamped.
S5 step includes: the translational degree of freedom for adjusting the fine positioning sample stage 202, keeps target nano wire and silicon base de- From；The translational degree of freedom of coarse positioning sample stage 201 is adjusted, the mobile electrode basement makes electrode basement be located at the target and receives Immediately below rice noodles；The translational degree of freedom for adjusting the fine positioning sample stage 202 is located at the both ends of the target nano wire The surface of two electrodes, and contact the both ends of the target nano wire with two electrodes respectively.This is because nano wire sheet Body has certain rigidity；It is difficult to realize place to avoid nano wire from being built-up in the AFM probe, be moved by described second Mechanism 204 controls the movement of tungsten needle, and the target nano wire is compacted in the electrode basement, the nanometer that auxiliary will be clamped Line is placed on the electrode；Two sets of first movement mechanisms 203 are controlled, the needle point and nano wire point of described two AFM probes are made From by means of nano wire self gravity and the auxiliary of tungsten needle, nano wire is placed on electrode.Here, it takes full advantage of described Fine positioning sample stage 202 and the combined advantage of coarse positioning sample stage 201, the nano-manipulation device make the movement of nano wire more Add flexibly.
S6 step includes: the mobile coarse positioning sample stage 201, drives the silicon base and electrode basement to move, makes institute It states silicon base and is located at visual field center；Adjust the fine positioning sample stage 202；It chooses target nanoparticle cluster and is located at imaging The center of view；Electron beam object lens 103 and electron beam transmitting and regulation module 102 are adjusted, makes the nano particle cluster aobvious It shows on showing device 108 and is clearly imaged.Here, electron beam object lens 103 are adjusted to be to increase the amplification of electron beam object lens 103 Multiple, amplification factor adjust electron beam transmitting and regulation module 102 are to adjust adding for electron beam between 5000-15000 times The electron beams relevant parameter such as fast voltage.
S7 step includes: to drive actuating station to clamp the target nanoparticle cluster using actuating station operating device to include: Electron beam object lens 103 are adjusted, reduce the amplification factor of electron beam object lens 103, the amplification factor of electron beam object lens 103 exists here Between 2000-5000 times；Here, first movement mechanism 203 has three sets, wherein on a set of first movement mechanism 203 The optical fiber probe is installed, AFM probe, second fortune are in addition separately installed on two sets of first movement mechanisms 203 Tungsten needle is installed on motivation structure 204, it is respectively that the AFM probe is mobile by two sets of first movement mechanisms 203, make AFM Probe is constantly close to target nanoparticle cluster, until keeping the needle point of the AFM probe and the target nanoparticle cluster equal Show and be clearly imaged, here, the needle point of two sets of AFM probes and the target nanoparticle in display device 108 The minimum range of cluster is 10nm, captures the needle point of the AFM probe and the active position of the target nanoparticle cluster；Control First movement mechanism 203 is made, the needle point of two sets of AFM probes is made to be moved to the effect of the target nanoparticle cluster Position makes the needle point of two AFM probes form tweezers, nano particle cluster is clamped.
S8 step includes: the translational degree of freedom for adjusting the fine positioning sample stage 202, makes target nanoparticle cluster and silicon Substrate is detached from；It is mobile to make the electrode basement, and is located at electrode basement for the translational degree of freedom for adjusting coarse positioning sample stage 201 Immediately below the target nanoparticle cluster；The translational degree of freedom for adjusting the fine positioning sample stage 202, makes the electrode basement It is mobile, so that the target nanoparticle cluster is located at the surface of the electrode；Nano-manipulation device is adjusted, AFM probe is released The target nanoparticle cluster is put, the target nanoparticle cluster is made to be located at the connection of the target nano wire and electrode Place, here, can make the target nanoparticle cluster be moved to the target nano wire and electrode by the movement sample stage Junction, the target nanoparticle cluster can also be made to be moved to the mesh by adjusting the actuating station operating device Mark the junction of nano wire and electrode.Here, the fine positioning sample stage 202 and 201 groups of coarse positioning sample stage are taken full advantage of The advantage of conjunction, the nano-manipulation device make the movement of nano wire more flexible.And the step of being repeated in S5-S7, it will be more A target nanoparticle cluster is moved to the junction of the target nano wire and electrode.
The nanometer is carried out using the nano particle cluster as solder flux as heat source using near field light in S9 step Connection Step between line and electrode includes:
The first movement mechanism is adjusted, the needle point of wherein a set of AFM probe is made to be located at the company of the nano wire and electrode Place is met, here, is located at the needle point of the AFM probe on nano particle, and the minimum range with the nano particle cluster For 1-5nm.
Laser beam emitting device is opened, adjusts the laser parameters such as laser power, wavelength, here, laser power is set as 10- 65mW, optical maser wavelength are set as 808nm, the angle of control the first movement mechanism adjustment optical fiber probe and position, make laser from institute The nano particle cluster that optical fiber probe is emitted at the nano wire docking is stated, and the needle point of the AFM probe is made to be located at laser In the range of irradiation.At this point, near field light can be generated between the needle point and nano particle cluster of the AFM probe, pass through control Near field light action time 1-5min can melt nano particle cluster, and then two nano wires are connected.Here, nanometer Grain cluster serves as connection medium, and the connection between the different nano wires is realized by the thawing of nano particle cluster.Here By mobile first movement mechanism to driving the AFM probe to realize nano wire and nanometer to different spatial positions The movement of particle, auxiliary realize the generation of near field light.
The advantage of this embodiment is that by being dispersed in after mixing nano wire and nano particle according to a certain percentage Silicon chip surface avoids the hair for the phenomenon that excessively concentrating or excessively evacuate caused by direct coated with nano line and nano particle cluster It is raw, improve the efficiency that nano wire is connect with electrode；It, can more efficiently by the cooperation of coarse positioning platform and fine positioning platform Ground captures nano particle cluster and nano wire, improves nano wire and connects the efficiency connecting with electrode；Pass through coarse positioning The cooperation of platform and the first movement mechanism keeps the operation of AFM probe more convenient, improves the effect that nano wire is connect with electrode Rate；By converting near field light for far field light, and the connection of nano particle cluster is carried out using near field light, avoid the effect of laser Area is excessive, causes the damage of nano wire and nano particle, improves the quality of connection of nano wire and electrode.
After completing the connection between the nano wire and electrode using the nano particle cluster, the electron beam is closed Transmitting and regulation module 102, and unloading vacuum is carried out to the vacuum chamber 101, protective gas introducing device 105 is opened simultaneously, Protective gas is passed through in the vacuum chamber 101, hatch door is then opened, takes out sample.The advantages of this arrangement are as follows when described When vacuum chamber 101 is opened, protective gas can be oxidized and reduce outside air to avoid the nano wire and nano particle to institute State the pollution inside vacuum chamber 101.
It should be noted that the present embodiment completes the preferable implementation that different nano wires connect just with nanometer attachment device Example, nanometer attachment device can also complete the connection of different nano wires by other means, and the benefit that the present embodiment has exists It is described above, is not repeated herein.Therefore, the present embodiment does not constitute the limitation to nanometer attachment device.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention Within mind and principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.

Claims (10)

1. a kind of nano-manipulation device characterized by comprising the first movement mechanism (203), the second movement mechanism (204) and Control device (107), first movement mechanism (203) have multiple translational degree of freedom and at least one rotary freedom, institute The second movement mechanism (204) are stated with multiple rotary freedoms and at least one translational degree of freedom, first movement mechanism (203) and on second movement mechanism (204) actuating station, first movement mechanism (203) and described second are mounted on Movement mechanism (204) is connected with the control device (107) respectively, and the control device (107) is suitable for control described first Movement mechanism (203) and second movement mechanism (204) drive the execution end motion.
2. nano-manipulation device according to claim 1, which is characterized in that the actuating station is tungsten needle (207) or AFM is visited Needle (205), the control device (107) are suitable for controlling first movement mechanism (203) and second movement mechanism (204) The execution end motion is driven respectively, the tip of the actuating station is made to form micro- tweezers, to realize the clamping to nanostructure.
3. nano-manipulation device according to claim 1, which is characterized in that fine positioning sample stage (202), the fine positioning There are three orthogonal translational degree of freedom, the fine positioning sample stage (202) is suitable for putting the nanometer sample stage (202) tool Structure simultaneously drives the nanostructure mobile.
4. nano-manipulation device according to claim 3, which is characterized in that further include: coarse positioning sample stage (201), It is fixedly connected with the fine positioning sample stage (202)；The coarse positioning sample stage (201) is with multiple translational degree of freedom and at least Two rotary freedoms, the coarse positioning sample stage (201) are suitable for driving fine positioning sample stage (202) movement.
5. nano-manipulation device according to claim 4, which is characterized in that the coarse positioning sample stage (201) has two A rotary freedom and three orthogonal translational degree of freedom, one of them described rotation of the coarse positioning sample stage (201) Turning freedom degree is to make the fine positioning sample stage (202) around the freedom degree of center rotation, the coarse positioning sample stage (201) it is another One rotary freedom is to make the inclined freedom degree of the fine positioning sample stage (202).
6. -5 any nano-manipulation device according to claim 1, which is characterized in that first movement mechanism (203) There are three orthogonal translational degree of freedom and a rotational freedoms for tool.
7. nano-manipulation device according to claim 6, which is characterized in that second movement mechanism (204) includes solid Determine part (227), the first revolving part (211), the second revolving part (210), third revolving part (209), second movement mechanism (204) there are three rotational freedoms for tool: first revolving part (211) is driven by the driving device around the fixing piece (227) freedom degree rotated；Second revolving part (210) is driven by the driving device around first revolving part (211) The freedom degree of rotation；The third revolving part (209) center driven by the driving device around the third revolving part (209) The freedom degree of rotation.
8. the nano-manipulation device as described in right wants 1, which is characterized in that further include mounting rack, be provided on the mounting rack Multiple installation positions, the installation position are suitable for the installation of first movement mechanism (203) or second movement mechanism (204).
9. nano-manipulation device according to claim 8, which is characterized in that first movement mechanism (203) and described Second movement mechanism (204) is installed at the top of vacuum chamber (101) by mounting rack suspension, the fine positioning sample stage (202) hatch door of the vacuum chamber (101), the fine positioning sample stage are installed on by the coarse positioning sample stage (201) (202) it is located at the lower section of first movement mechanism (203) and second movement mechanism (204).
10. nano-manipulation device according to claim 9, which is characterized in that second movement mechanism (204) is at least Two sets.
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