CN109474247A - A kind of dual-passband power amplifier that filtering is integrated - Google Patents
A kind of dual-passband power amplifier that filtering is integrated Download PDFInfo
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- CN109474247A CN109474247A CN201811353689.0A CN201811353689A CN109474247A CN 109474247 A CN109474247 A CN 109474247A CN 201811353689 A CN201811353689 A CN 201811353689A CN 109474247 A CN109474247 A CN 109474247A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
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Abstract
The invention discloses a kind of dual-passband power amplifier that filtering is integrated, a termination negative pressure of inductance L1, one end of another termination microstrip line R1 of inductance L1 and one end of capacitor C1, the grid of another termination transistor M of microstrip line R1, the other end ground connection of capacitor C1；A termination positive pressure of inductance L2, one end of another termination microstrip line R2 of inductance L2 and one end of capacitor C2, the source electrode of another termination transistor M of microstrip line R2, the other end ground connection of capacitor C2；The other end of the grid of one termination transistor M of input matching network, one end of another termination capacitor C3 of input matching network, capacitor C3 accesses 50 Ω port Impedance Z1, as signal input part.A kind of dual-passband power amplifier that filtering is integrated of the present invention, double-passband filter is integrated in the output stage of transistor by Integrated, to obtain the dual-passband output circuit that matching is merged with filter function, can be omitted match circuit simultaneously makes amplifier directly be connected with filter, and is completed at the same time matched function.
Description
Technical field
The present invention relates to electronic information technical fields, and in particular to a kind of dual-passband power amplifier that filtering is integrated.
Background technique
Traditional dual-passband power amplifier is mainly to be realized by carrying out impedance matching in two different frequency ranges,
This often makes circuit structure more complicated, and the dual-passband power amplifier interband isolation that design obtains is very poor.And power amplifier
Below it is generally necessary to increase filter to filter out the various harmonic waves of amplifier nonlinearity bring and intermodulation component and bring to receiver
Interference and influence.Traditional method is independent external filters module again after power amplifier module, in this way in power amplifier and filter
The connecting line and adapter introduced between two components not only will increase circuit damage, also results in circuit size and significantly increases
Add, so that production and production cost are consequently increased.The present invention proposes a kind of integrated think of from new design angle
Think, double-passband filter and power amplifier are integrated, allows double-passband filter simultaneously as power amplification
The output matching network of device, so that the dual-passband power amplifier with filter function is achieved.This design method
Not only effectively solved the problems, such as that interband isolation existing for conventional method was poor, circuit structure is complicated, but also to solve power amplifier external
Big, at high cost, circuit loss the is big problem of double-passband filter method bring circuit size, makes the design of dual-passband amplifier
It is more easily implemented, there is great researching value.
Wireless system cannot be efficiently solved due to various wireless communication standard and be deposited at present, and each standard is again in the presence of more
Kind communication band divides the problems such as RF receiving and transmission module is more and more, and base station volume is more and more huger in one base station of bring.
While transmission for the user demand for meeting surge and high speed data transmission service, base station radio-frequency transceiver module is solved increasingly
More, the problems such as power consumption is higher and higher, constructs low-carbon, green communications, realizes the development of system upgrade long-term sustainable, multifrequency of new generation
Concurrent multi-band wireless system with fusion architecture is come into being, and concurrent multiband RF power amplification is multi-band blending framework
Wireless system core key equipment.
In radio-frequency front-end, amplifier can avoid setting as the maximum module that takes up space using bimodulus or multimode amplifier
Additional amplifying circuit is counted, to greatly reduce size.There are many ways to designing dual-passband power amplifier, it is most common to do
Method is to realize the matching in two working frequency range by the analysis to amplifier impedance characteristic in output end.Second comparison is normal
The method seen is using switch, such as MEMS (MEMS), PIN switching diode etc..By power amplifier (abbreviation function
Put) and double-passband filter it is individually designed, the overall dimensions of circuit are larger.The implementation method of the third concurrent dual-passband amplifier
It is to cascade minor matters load line after single-pass band matching network, so that single-pass band matching network be made to become dual-passband, realizes bilateral
Band amplifier.When designing this dual-passband amplifier, a kind of power amplifier of single-pass band, the work frequency of this power amplifier are devised first
Section includes simultaneously f1And f2, then minor matters load lines in parallel after match circuit, this section of transmission line can be in frequency f1And f2
One transmission zero of middle generation, to realize the effect of dual-passband.Its schematic diagram is illustrated in fig. 1 shown below with overall structure.
In traditional dual-passband amplifier, can be divided mainly into it is concurrent with non-concurrent two kinds.Burse mode amplifier can be with
It works at the same time in different frequency ranges, rather than burse mode cannot be worked at the same time in different frequency ranges.Chang Yiwei in dual-passband design
Mechatronic Systems (MEMS), PIN switching diode etc. design the dual-passband power amplifier of non-concurrent mode as switch.For
The method of the amplifier of burse mode, the most common design match circuit is to obtain mould by the simulation analysis to amplifier model
Then type impedance realizes matching in two frequency ranges respectively.This method because it is contemplated that transistor different impedance operators, exist and set
Meter process is more complicated, and circuit realization is easy the disadvantages of being restricted.The implementation method of another concurrent dual-passband amplifier is
The minor matters load line in parallel after single-pass band matching network, so that transmission zero is generated in single-pass band, so that single-pass band pair net
Network becomes dual-passband, realizes dual-passband amplifier.For such methods are compared with the first kind, solve asking for complex circuit designs
Topic still if only introducing single transmission zero, can not generate good interband isolation；And multiple transmission zeros are introduced, again
Meeting is so that overall performance (efficiency, output power etc.) is deteriorated.And behind designed power amplifier usually require increase filter with
It filters out the various harmonic waves of amplifier nonlinearity bring and intermodulation component receiver bring is interfered and responded.Traditional method is
Independent external filters module again after power amplifier module, so, entire circuit volume and size sharply increase, circuit damage
Increase and cost also jumps up.
Studies have shown that in the design of dual-passband power amplifier, the design side of traditional concurrent dual-passband match circuit
Method is cumbersome and interband isolation is very poor, and the non-concurrent match circuit based on RF switch has biggish insertion loss again, with
On design method to be all difficult to be concurrent system, has lesser insertion loss again, while guaranteeing good interband isolation
Degree.And also to need independent external filters module to filter out amplifier nonlinearity bring various after power amplifier modules of these designs
The interference and response of harmonic wave and intermodulation component to receiver, caused circuit volume and size increase, circuit damage increases.For
It is asked caused by external filters module after the shortcomings that traditional dual-passband discussed above designs circuit and power amplifier module
Topic, the invention proposes a kind of design methods of new concurrent dual-passband power amplifier: double-passband filter is fused to function
It puts output end directly to participate in matching, the scheme of the external double-passband filter of traditional power amplifier can be not only realized inside power amplifier, and
And can also realize that dual-passband matches, to reduce the internal circuit block of entire dual-passband power amplifier.
In conclusion the present invention solves, traditional dual-passband Match circuits are complicated, the matching electricity based on RF switch
Road insertion loss is big and the problem of isolation difference, and the power amplifier that the present invention uses integrates dual-passband filter matching network
Scheme can greatly reduce circuit size, reduce production and production cost.
Summary of the invention
To be difficult to the technical problem to be solved by the present invention is to the prior art be concurrent system, has lesser insertion again
Loss, while guaranteeing good interband isolation.And independent external filters mould is also needed after the power amplifier module of these designs
Block filters out the interference and response of the various harmonic waves of amplifier nonlinearity bring and intermodulation component to receiver, caused circuit volume
Increase with size, circuit damage increases, and it is an object of the present invention to provide a kind of dual-passband power amplifier that filtering is integrated, solves above-mentioned ask
Topic.
The present invention is achieved through the following technical solutions:
A kind of dual-passband power amplifier that filtering is integrated, including input matching network, transistor M, capacitor C1, capacitor
C2, capacitor C3, inductance L1, inductance L2, microstrip line R1, microstrip line R2, dual-passband filtering match circuit, port Impedance Z1 and end
Mouth impedance Z 2；The one of a termination negative pressure of the inductance L1, one end of another termination microstrip line R1 of inductance L1 and capacitor C1
End, the grid of another termination transistor M of the microstrip line R1, the other end ground connection of the capacitor C1；The one of the inductance L2
Terminate positive pressure, one end of another termination microstrip line R2 of inductance L2 and one end of capacitor C2, another termination of the microstrip line R2
The drain electrode of transistor M, the other end ground connection of the capacitor C2；The grid of one termination transistor M of the input matching network, it is defeated
Enter one end of another termination capacitor C3 of matching network, the other end access interface impedance Z 1 of the capacitor C3；The dual-passband
The drain electrode of a termination transistor M of match circuit is filtered, dual-passband filters the other end access interface impedance Z 2 of match circuit；Institute
State the source electrode ground connection of transistor M.
In the prior art, it is difficult to accomplish to be concurrent system, have lesser insertion loss again, while guarantee good interband
Isolation.And independent external filters module is also needed to filter out amplifier nonlinearity bring after the power amplifier module of these designs
The interference and response of various harmonic waves and intermodulation component to receiver, caused circuit volume and size increase, circuit damage increases.
The present invention in application, the overall structure of amplifier of the present invention using microstrip line realization, by Integrated by bilateral
Band filter is integrated in the output stage of transistor, to obtain the dual-passband output circuit that matching is merged with filter function, simultaneously
Can be omitted match circuit makes amplifier directly be connected with filter, and is completed at the same time matched function, specific working principle
Detailed in Example.
Further, the dual-passband filtering match circuit includes resonator；The resonator includes square ring micro-strip, first
Short-circuit minor matters, the second short-circuit minor matters, the first T-type minor matters and the second T-type minor matters；One end side of being connected to of described first short-circuit minor matters
The inner ring of ring micro-strip, other end ground connection；Described second short-circuit minor matters are symmetrical with the first short-circuit minor matters, and the one of the second short-circuit minor matters
Hold the inner ring of the side's of being connected to ring micro-strip, other end ground connection；The end side of the being connected to ring micro-strip of the first T-type minor matters abdomen minor matters
Outer ring, and the axis of the first T-type minor matters abdomen minor matters is perpendicular to the axis of the first short-circuit minor matters；The second T-type minor matters are symmetrical with
First T-type minor matters, and the outer ring of the end side of the being connected to ring micro-strip of the second T-type minor matters abdomen minor matters；The resonant mode of the resonator
Formula is 1/4 wave resonator.
The present invention in application, using a kind of Wide stop bands double-passband filter design method.It designs first a kind of novel
Minor matters load Fang Huansi mould resonator, are analyzed by even odd mode theory, the equivalent circuit of each mode of resonance of the structure is 1/4
Wave resonator, to substantially reduce the size of filter, in addition the first harmonic of each mode is 3 times of fundamental frequency,
Help to obtain broader stopband characteristic.
Further, the dual-passband filtering match circuit further includes the first open circuit minor matters and the second open circuit minor matters；It is described
One end of first open circuit minor matters is connected to the end of the first T-type minor matters upper limb minor matters, one end connection of the second open circuit minor matters
In the end of the 2nd T type minor matters upper limb minor matters, the other end Xiang Fanghuan micro-strip bending of the first open circuit minor matters, the second open circuit minor matters
The bending of other end Xiang Fanghuan micro-strip, and the other end of the first open circuit minor matters and the other end of the second open circuit minor matters are close and formed
Coupling between minor matters；The first open circuit minor matters and the second open circuit minor matters are symmetrical arranged.
Further, the dual-passband filtering match circuit further includes third open circuit minor matters, the 4th open circuit minor matters, the first coupling
Close minor matters, the second coupling minor matters, the first feeder line and the second feeder line；One end of the third open circuit minor matters is connected to the first T-type branch
The end of bottom wing minor matters is saved, the other end of third open circuit minor matters is bent to the first T-type minor matters；One end of the 4th open circuit minor matters
It is connected to the end of the second T-type minor matters bottom wing minor matters, the other end of the 4th open circuit minor matters is bent to the second T-type minor matters；Described
Three open circuit minor matters and the 4th open circuit minor matters are symmetrical arranged；The first coupling minor matters are close and are coupled in third open circuit minor matters, and
The first feeder line is set in first coupling minor matters；The second coupling minor matters are close and are coupled in the 4th open circuit minor matters, and the second coupling
It closes and the second feeder line is set in minor matters.
Further, first feeder line is connected to the drain electrode of transistor M；The second feeder line access interface impedance Z 2.
Further, input matching network includes the microstrip line R3 being sequentially connected in series, microstrip line R4, microstrip line R5 and microstrip line
R6；A termination capacitor C3 of the microstrip line R3 far from microstrip line R4；A termination of the microstrip line R6 far from microstrip line R5 is brilliant
The grid of body pipe M.
Compared with prior art, the present invention having the following advantages and benefits:
Double-passband filter, is integrated in by a kind of dual-passband power amplifier that filtering is integrated of the present invention by Integrated
The output stage of transistor to obtain the dual-passband output circuit that matching is merged with filter function, while can be omitted matching electricity
Road makes amplifier directly be connected with filter, and is completed at the same time matched function.
Detailed description of the invention
Attached drawing described herein is used to provide to further understand the embodiment of the present invention, constitutes one of the application
Point, do not constitute the restriction to the embodiment of the present invention.In the accompanying drawings:
Fig. 1 is prior-art illustration；
Fig. 2 is resonator structure schematic diagram；
Fig. 3 is the equivalent circuit of parasitic parameter and output matching network composition；
Fig. 4 is the schematic diagram of double-passband filter；
Fig. 5 is dual-passband power amplifier circuit schematic diagram；
Fig. 6 is schematic diagram of the embodiment of the present invention；
Fig. 7 is schematic diagram of the embodiment of the present invention；
Fig. 8 is schematic diagram of the embodiment of the present invention；
Fig. 9 is schematic diagram of the embodiment of the present invention；
Figure 10 is schematic diagram of the embodiment of the present invention；
Figure 11 is schematic diagram of the embodiment of the present invention；
Figure 12 is schematic diagram of the embodiment of the present invention；
Figure 13 is schematic diagram of the embodiment of the present invention；
Figure 14 is schematic diagram of the embodiment of the present invention.
Label and corresponding parts title in attached drawing:
1- dual-passband filters match circuit,
The side's 121- ring micro-strip, the short-circuit minor matters of 122- first, the short-circuit minor matters of 123- second, 124- the first T-type minor matters, 125- the
Two T type minor matters, the open circuit minor matters of 111- first, the open circuit minor matters of 112- second, 113- third open circuit minor matters, the open circuit branch of 114- the 4th
Section, 115- first couple minor matters, and 116- second couples minor matters, the first feeder line of 117-, the second feeder line of 118-.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below with reference to embodiment and attached drawing, to this
Invention is described in further detail, and exemplary embodiment of the invention and its explanation for explaining only the invention, are not made
For limitation of the invention.
Embodiment
As shown in Fig. 2, for double-passband filter design there are many method, herein in view of circuit overall dimensions
Isolation between miniaturization and filter passband, the design use a kind of design method of Wide stop bands double-passband filter.It is first
A kind of novel minor matters load Fang Huansi mould resonator is first designed, is analyzed by even odd mode theory, each mode of resonance of the structure
Equivalent circuit be 1/4 wave resonator, to substantially reduce the size of filter, the other first harmonic of each mode
It is 3 times of fundamental frequency, it helps obtain broader stopband characteristic.The resonance frequency of 4 modes of the resonator can lead to
It crosses corresponding physical size freely to adjust, the filter of design also has individually controllable passband central frequency and bandwidth.Crotch
The feed line of shape designs, and introduces new transmission zero, further improves the selectivity and stopband characteristic of filter.Filter
Structure is easy to analyze, and design cycle is simple.
Novel minor matters load Fang Huansi mould resonator structure is as shown in Figure 2.Square ring two sides are two identical T shape minor matters,
It is loaded with two sections of short-circuit minor matters among Fang Huan, the width of this two sections short-circuit minor matters and is equal in length.Entire resonator structure
It is symmetrical about dotted line P-P ' in figure, therefore can use Even odd mode method and its resonance characteristic is analyzed.
Fig. 6 is resonator idol mould equivalent circuit, and Fig. 7 is mode E1Even mould equivalent circuit, Fig. 8 are mode O1The even equivalent electricity of mould
Road, Fig. 9 are resonator surprise mould equivalent circuit, and Figure 10 is mode E2Odd mould equivalent circuit, Figure 11 are mode O2Odd mould equivalent circuit,
In the excitation of even mould, the place the line of symmetry P-P ' electric current of resonator is zero, is equivalent to ideal magnetic wall (virtual open circuit), at this time plus
Two segment length carried are L4, short-circuit minor matters that width is 2W be divided, width becomes original 1/2, therefore even mould equivalent circuit
As shown in Figure 6.In the excitation of odd mould, the voltage at the place resonator line of symmetry P-P ' is zero, and it is (virtual short to be equivalent to desired electrical wall
Road), the short-circuit minor matters of two sections loaded at this time, which can be considered as, to be not present, therefore odd mould equivalent circuit is as shown in Figure 9.
As it can be seen that the even mould equivalent circuit in Fig. 6 and the odd mould equivalent circuit in Fig. 9 still have symmetry, again to Fig. 6
In even mould equivalent circuit application Even odd mode method, then obtained Fig. 7 and mode E shown in Fig. 101With mode E2；To in Fig. 9
Odd mould equivalent circuit application Even odd mode method, has obtained mode O shown in Fig. 8 and Figure 111With mode O2, and 4 obtained
The equivalent circuit of mode is 1/4 wave resonator, and resonance frequency is denoted as f respectivelyE1, fE2, fO1And fO2, then it
Can be provided by following equation:
Wherein, c represents the light velocity of free space, εeffRepresent the effective dielectric constant of microstrip dielectric substrate.
Available according to analysis above: the equivalent circuit of 4 modes of resonance of the resonator structure is 1/4 wave
Long resonator efficiently reduces the circuit size of filter, but also each mode first harmonic obtains present in frequency tripling
Obtained better stopband characteristic；F can be obtained by formula (1)~(2)E1< fO1< fE2=fO2；Change minor matters L1Length can be to 4 moulds
The resonance frequency of formula all has an impact, L2And L3Variation only influence fE1And fO1Size and do not have to the resonance frequency of other modes
Have an impact, changes minor matters L4Length only influence fE1Size and the resonance frequency of other modes is not influenced.
Further as shown in figure 4, needing to apply novel four moulds resonator design double-passband filter by two weights
The mode E of conjunction2And O2Separation, to form passband effect.As shown in figure 4, two sections of open circuit minor matters bend inwards and are allowed to mutually lean on
Closely, form the coupling between minor matters, minor matters coupling meeting of introducing so that two modes of resonance being overlapped frequency fE2And fO2Cause
For coupling effect and separate, and two new transmission zeros are introduced into.The introducing of new transmission zero be due to minor matters it
Between coupling form new transmission path, at transmission zero respective frequencies, new transmission path and original transmission path because
For superposition effect and cancel out each other.The intensity of minor matters coupling can be by changing coupling gap g1 control.4 mode of resonance quilts
The transmission zero of introducing is divided into two groups, wherein fE1And fO1It is the 1st group, constitutes the 1st passband；fE2And fO2It is the 2nd group, it is logical constitutes the 2nd
Band.The centre frequency of 1st passband can be by parameter L2And L3Control, the centre frequency of the 1st passband is with parameter L2And L3Increase and
Reduce, bandwidth can be by L4Control, and with L4Increase, the bandwidth of the 1st passband also will increase；2nd passband central frequency can
By parameter L1Control, the centre frequency of the 2nd passband is with parameter L1Increase and reduce, bandwidth can be by the coupling between minor matters
Close gap g1Control, and the bandwidth of the 2nd passband is with coupling gap g1Reduction and increase.In conclusion in two passbands
Frequency of heart and bandwidth are all individually controllable.
Further as shown in figure 3, dual-passband match circuit is directly collected on the basis of existing dual-passband filter structure
It is fused together at the output stage in amplifier transistor, that is, by matching and dual-passband filtering as the defeated of entire amplifier
Match circuit out.Because the centre frequency and bandwidth of two passbands of the filter of above-mentioned design be all it is individually controllable,
When carrying out with the impedance matching of amplifier transistor, change the input impedance of double-passband filter, to the passband of filter
Centre frequency and bandwidth contributions are little.This method is not only simply easily achieved, and Circuit Matching is carried out on the basis of filtering, together
When filtering Circuit Matching is not influenced, this is key protection point of the invention.
It is the microstrip line length and width by changing the input terminal of dual-passband filter circuit in this secondary design, it is double to change
The input impedance phase and size of pass filter, so that the impedance with amplifier transistor carries out conjugate impedance match.Such as Fig. 3 institute
Show, is the packaging model of CGH40010 transistor and the equivalent network of double-passband filter composition, is after changing in dashed rectangle
Double-passband filter input terminal length and width.
Pass through above design process, one example Exhibition Design effect of the present invention.Transistor is obtained by load balance factor
It is Z to impedances=(19.7+j*11.3) Ω designs the dual-passband matching electricity that a centre frequency is respectively 1.5GHz/2.4GHz
Road.Firstly, designing the double-passband filter that a centre frequency is respectively 1.5GHz/2.4GHz.Then, do not changing dual-passband
In the case where any parameter of filter, filter input end impedance is modified, the impedance of itself and transistor is made to match.In view of for
Whether the matching network of verifying design meets the requirements, and circuit is analyzed and calculated with the equivalent network of Fig. 3, obtains
It is responded in the S parameter of 1.5GHz/2.4GHz, as shown in figure 12.As shown in Figure 12, the centre frequency of two passbands is respectively
1.5GHz and 2.4GHz, the insertion loss at two passband central frequencies are respectively 0.30dB and 0.48dB, minimum in passband to return
Wave loss is respectively 21.1dB and 18.4dB.
It is further as shown in figure 5, design procedure more than passing through, a dual-passband power of final design of the present invention is put
Big device.The transistor of the amplifier uses the CGH40010-F of CREE company, and output power can reach 10W.As shown in figure 5,
The overall structure of amplifier is using microstrip line realization, the four section microstrip lines that input matching network uses Broadband Matching algorithm to obtain
It is connected in series, output matching network (uses filter by what dual-passband matching network proposed by the present invention was realized in circuit diagram
Wave device schematic diagram indicates that specific structure is referring to Fig. 3).It is as shown in Figure 13 and Figure 14 dual-passband power amplification proposed by the present invention
Device design result, Figure 13 are gain curve, and Figure 14 is power added efficiency curve: when input power is 28dBm, it can be seen that
The power added efficiency of its dual-passband 1.5GHz/2.4Ghz is superior to 65%, and gain is all larger than 13dB.In addition, either double
The gain of passband power amplifier or efficiency obtain one or two transmission zero between two passbands.
The invention proposes a kind of design methods of new concurrent dual-passband match circuit.This method is to filter dual-passband
Wave device is fused to power amplifier output end and directly participates in matching, and the external dual-passband filtering of traditional power amplifier can be not only realized inside power amplifier
The scheme of device, but also dual-passband matching may be implemented, to reduce the internal circuit block of entire dual-passband power amplifier.It is this
The circuit structure that method obtains has the isolation characteristic of original double-passband filter, so that being isolated between the passband of power amplifier
Degree greatly strengthens.The present invention solves traditional dual-passband Match circuits complexity, and the match circuit based on RF switch is inserted
Enter and big and isolation difference problem is lost.And this method realizes the side of traditional power amplifier external filters inside power amplifier
Case reduces circuit size, reduces production and production cost.
Above-described specific embodiment has carried out further the purpose of the present invention, technical scheme and beneficial effects
It is described in detail, it should be understood that being not intended to limit the present invention the foregoing is merely a specific embodiment of the invention
Protection scope, all within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should all include
Within protection scope of the present invention.
Claims (6)
1. a kind of dual-passband power amplifier that filtering is integrated, which is characterized in that including input matching network, transistor M, capacitor
C1, capacitor C2, capacitor C3, inductance L1, inductance L2, microstrip line R1, microstrip line R2, dual-passband filtering match circuit (1), port resistance
Anti- Z1 and port Impedance Z2；A termination negative pressure of the inductance L1, one end of another termination microstrip line R1 of inductance L1 and capacitor
One end of C1, the grid of another termination transistor M of the microstrip line R1, the other end ground connection of the capacitor C1；The inductance
A termination positive pressure of L2, one end of another termination microstrip line R2 of inductance L2 and one end of capacitor C2, the microstrip line R2's is another
The drain electrode of one termination transistor M, the other end ground connection of the capacitor C2；One termination transistor M's of the input matching network
Grid, one end of another termination capacitor C3 of input matching network, the other end access interface impedance Z 1 of the capacitor C3；It is described
Dual-passband filters the drain electrode of a termination transistor M of match circuit (1), and dual-passband filters the other end access interface of match circuit
Impedance Z 2；The source electrode of the transistor M is grounded.
2. a kind of integrated dual-passband power amplifier of filtering according to claim 1, which is characterized in that the dual-passband
Filtering match circuit (1) includes resonator；The resonator includes square ring micro-strip (121), the first short-circuit minor matters (122), second
Short-circuit minor matters (123), the first T-type minor matters (124) and the second T-type minor matters (125)；One end of described first short-circuit minor matters (122)
The inner ring of the side's of being connected to ring micro-strip (121), other end ground connection；Described second short-circuit minor matters (123) are symmetrical with the first short-circuit minor matters
(122), and the inner ring of one end side of being connected to ring micro-strip (121) of the second short-circuit minor matters (123), the other end are grounded；
The outer ring of the end side of the being connected to ring micro-strip (121) of first T-type minor matters (124) the abdomen minor matters, and the first T-type minor matters
(124) axis of the axis of abdomen minor matters perpendicular to the first short-circuit minor matters (122)；The second T-type minor matters (125) are symmetrical with first
T-type minor matters (124), and the outer ring of the end side of the being connected to ring micro-strip (121) of second T-type minor matters (125) abdomen minor matters；The resonance
The mode of resonance of device is 1/4 wave resonator.
3. a kind of integrated dual-passband power amplifier of filtering according to claim 2, which is characterized in that the resonator
It further include the first open circuit minor matters (111) and the second open circuit minor matters (112)；One end of first open circuit minor matters (111) is connected to
One end of the end of first T-type minor matters (124) upper limb minor matters, second open circuit minor matters (112) is connected to the second T-type minor matters
(125) end of upper limb minor matters, other end Xiang Fanghuan micro-strip (121) bending of the first open circuit minor matters (111), the second open circuit minor matters
(112) other end Xiang Fanghuan micro-strip (121) bending, and the other end of the first open circuit minor matters (111) and the second open circuit minor matters
(112) the other end is close and forms the coupling between minor matters；First open circuit minor matters (111) and the second open circuit minor matters (112)
It is symmetrical arranged.
4. a kind of integrated dual-passband power amplifier of filtering according to claim 3, which is characterized in that the dual-passband
Filtering match circuit (1) further includes third open circuit minor matters (113), the 4th open circuit minor matters (114), the first coupling minor matters (115), the
Two couplings minor matters (116), the first feeder line (117) and the second feeder line (118)；One end connection of third open circuit minor matters (113)
In the end of first T-type minor matters (124) bottom wing minor matters, third open a way minor matters (113) the other end to the first T-type minor matters (124)
Bending；One end of 4th open circuit minor matters (114) is connected to the end of second T-type minor matters (125) bottom wing minor matters, the 4th open circuit
The other end of minor matters (114) is bent to the second T-type minor matters (125)；Third open circuit minor matters (113) and the 4th open circuit minor matters
(114) it is symmetrical arranged；
First coupling minor matters (115) is close and is coupled in third open circuit minor matters (113), and in the first coupling minor matters (115)
First feeder line (117) are set；
Second coupling minor matters (116) is close and is coupled in the 4th open circuit minor matters (114), and in the second coupling minor matters (116)
Second feeder line (118) are set.
5. a kind of integrated dual-passband power amplifier of filtering according to claim 4, which is characterized in that first feedback
Line (117) is connected to the drain electrode of transistor M；Second feeder line (118) the access interface impedance Z 2.
6. a kind of integrated dual-passband power amplifier of filtering according to claim 1, which is characterized in that input pair net
Network includes the microstrip line R3 being sequentially connected in series, microstrip line R4, microstrip line R5 and microstrip line R6；The microstrip line R3 is far from microstrip line R4
A termination capacitor C3；The grid of a termination transistor M of the microstrip line R6 far from microstrip line R5.
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|---|---|---|---|
| CN201811353689.0A CN109474247A (en) | 2018-11-14 | 2018-11-14 | A kind of dual-passband power amplifier that filtering is integrated |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110401362A (en) * | 2019-06-28 | 2019-11-01 | 中通服咨询设计研究院有限公司 | A kind of L-band double frequency power rectifier circuit |
| CN110545078A (en) * | 2019-07-18 | 2019-12-06 | 电子科技大学 | Microstrip power amplifier |
| CN110896301A (en) * | 2019-11-20 | 2020-03-20 | 南京理工大学 | Dual-band filtering power amplifier |
| CN111371420A (en) * | 2019-12-10 | 2020-07-03 | 南京理工大学 | SIW filtering integrated F-type power amplifier |
| CN111654256A (en) * | 2020-05-22 | 2020-09-11 | 华南理工大学 | Double-frequency filtering power amplifier |
| CN112865716A (en) * | 2020-12-31 | 2021-05-28 | 四川天巡半导体科技有限责任公司 | Broadband high-efficiency power device based on multi-step branch matching network |
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Citations (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040041634A1 (en) * | 2002-08-30 | 2004-03-04 | Kabushiki Kaisha Toshiba | High-frequency power amplifier |
| US20040121745A1 (en) * | 2001-08-29 | 2004-06-24 | Meck Ronald A. | Method and apparatus for impedance matching in an amplifier using lumped and distributed inductance |
| TWI246250B (en) * | 2004-10-21 | 2005-12-21 | Sheng-Fuh Chang | Dual-band active filter |
| US20070069820A1 (en) * | 2005-09-28 | 2007-03-29 | Kanji Hayata | Electronic parts for high frequency power amplifier |
| CN103187601A (en) * | 2013-03-11 | 2013-07-03 | 西安电子科技大学 | Multimode wide-band filter based on multi-branch loaded square resonance ring |
| CN103457549A (en) * | 2013-09-12 | 2013-12-18 | 电子科技大学 | Tri-band radio frequency power amplifier and impedance matching method of matching network of tri-band radio frequency power amplifier |
| CN103825564A (en) * | 2014-02-24 | 2014-05-28 | 华南理工大学 | High-efficiency wideband power amplifier with band-pass filter response function |
| CN103956544A (en) * | 2014-03-05 | 2014-07-30 | 上海海事大学 | Ultra-wide band (UWB) filter based on folding branch loading multi-mode resonator |
| CN203883098U (en) * | 2014-05-09 | 2014-10-15 | 南京航空航天大学 | High common mode rejection dual mode broadband balance microstrip filter |
| CN105098303A (en) * | 2015-08-25 | 2015-11-25 | 华南理工大学 | Power divider with double-band filter function |
| CN105226351A (en) * | 2015-10-15 | 2016-01-06 | 南通大学 | A kind of adjustable differential double-passband filter and resonator |
| CN105720339A (en) * | 2016-03-30 | 2016-06-29 | 华南理工大学 | Dual-band adjustable band-pass filter |
| CN206602160U (en) * | 2017-03-18 | 2017-10-31 | 深圳市景程信息科技有限公司 | Bandpass filter based on toroidal cavity resonator and double minor matters open-circuited loads |
| CN107493082A (en) * | 2017-08-31 | 2017-12-19 | 电子科技大学 | A kind of dual-passband amplifier |
| CN107508565A (en) * | 2017-08-29 | 2017-12-22 | 北京邮电大学 | A kind of wideband power amplifer of discontinuous band operation |
| CN107689777A (en) * | 2017-08-11 | 2018-02-13 | 华中科技大学 | A kind of broadband Doherty power amplifier |
| CN107910623A (en) * | 2017-10-26 | 2018-04-13 | 上海海事大学 | The controllable low-loss compact quad-band bandpass filter of passband |
| CN108509749A (en) * | 2018-04-18 | 2018-09-07 | 电子科技大学 | A kind of dual-passband Designing power amplifier method |
| CN207977942U (en) * | 2018-04-18 | 2018-10-16 | 成都会讯科技有限公司 | A kind of dual-passband power amplifier |
| CN208015692U (en) * | 2018-04-08 | 2018-10-26 | 华南理工大学 | A kind of filtered power amplifier of SIR types suspension line filter |
| CN108768322A (en) * | 2018-07-11 | 2018-11-06 | 成都嘉纳海威科技有限责任公司 | A kind of high-efficient E type stacking power amplifier based on accurate harmonic controling |
-
2018
- 2018-11-14 CN CN201811353689.0A patent/CN109474247A/en active Pending
Patent Citations (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040121745A1 (en) * | 2001-08-29 | 2004-06-24 | Meck Ronald A. | Method and apparatus for impedance matching in an amplifier using lumped and distributed inductance |
| US20040041634A1 (en) * | 2002-08-30 | 2004-03-04 | Kabushiki Kaisha Toshiba | High-frequency power amplifier |
| TWI246250B (en) * | 2004-10-21 | 2005-12-21 | Sheng-Fuh Chang | Dual-band active filter |
| US20070069820A1 (en) * | 2005-09-28 | 2007-03-29 | Kanji Hayata | Electronic parts for high frequency power amplifier |
| CN103187601A (en) * | 2013-03-11 | 2013-07-03 | 西安电子科技大学 | Multimode wide-band filter based on multi-branch loaded square resonance ring |
| CN103457549A (en) * | 2013-09-12 | 2013-12-18 | 电子科技大学 | Tri-band radio frequency power amplifier and impedance matching method of matching network of tri-band radio frequency power amplifier |
| CN103825564A (en) * | 2014-02-24 | 2014-05-28 | 华南理工大学 | High-efficiency wideband power amplifier with band-pass filter response function |
| CN103956544A (en) * | 2014-03-05 | 2014-07-30 | 上海海事大学 | Ultra-wide band (UWB) filter based on folding branch loading multi-mode resonator |
| CN203883098U (en) * | 2014-05-09 | 2014-10-15 | 南京航空航天大学 | High common mode rejection dual mode broadband balance microstrip filter |
| CN105098303A (en) * | 2015-08-25 | 2015-11-25 | 华南理工大学 | Power divider with double-band filter function |
| CN105226351A (en) * | 2015-10-15 | 2016-01-06 | 南通大学 | A kind of adjustable differential double-passband filter and resonator |
| CN105720339A (en) * | 2016-03-30 | 2016-06-29 | 华南理工大学 | Dual-band adjustable band-pass filter |
| CN206602160U (en) * | 2017-03-18 | 2017-10-31 | 深圳市景程信息科技有限公司 | Bandpass filter based on toroidal cavity resonator and double minor matters open-circuited loads |
| CN107689777A (en) * | 2017-08-11 | 2018-02-13 | 华中科技大学 | A kind of broadband Doherty power amplifier |
| CN107508565A (en) * | 2017-08-29 | 2017-12-22 | 北京邮电大学 | A kind of wideband power amplifer of discontinuous band operation |
| CN107493082A (en) * | 2017-08-31 | 2017-12-19 | 电子科技大学 | A kind of dual-passband amplifier |
| CN107910623A (en) * | 2017-10-26 | 2018-04-13 | 上海海事大学 | The controllable low-loss compact quad-band bandpass filter of passband |
| CN208015692U (en) * | 2018-04-08 | 2018-10-26 | 华南理工大学 | A kind of filtered power amplifier of SIR types suspension line filter |
| CN108509749A (en) * | 2018-04-18 | 2018-09-07 | 电子科技大学 | A kind of dual-passband Designing power amplifier method |
| CN207977942U (en) * | 2018-04-18 | 2018-10-16 | 成都会讯科技有限公司 | A kind of dual-passband power amplifier |
| CN108768322A (en) * | 2018-07-11 | 2018-11-06 | 成都嘉纳海威科技有限责任公司 | A kind of high-efficient E type stacking power amplifier based on accurate harmonic controling |
Non-Patent Citations (5)
| Title |
|---|
| AMARJIT KUMAR: "Coupled stepped-impedance resonator (CSIR) based concurrent dual band filtering LNA for wireless applications", 《2015 IEEE MTT-S INTERNATIONAL MICROWAVE AND RF CONFERENCE (IMARC)》 * |
| GUO Q Y: "Bandpass Class-F Power Amplifier Based on", 《IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS》 * |
| 伍东兴: "S波段低噪声放大器的设计与优化", 《中国优秀硕士学位论文全文数据库信息科技辑》 * |
| 林磊: "新型宽阻带双通带滤波器设计", 《西安电子科技大学学报（自然科学版）》 * |
| 陆宇: "30～2600MHz超宽带GaN功率放大器的设计与实现", 《半导体技术》 * |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110401362A (en) * | 2019-06-28 | 2019-11-01 | 中通服咨询设计研究院有限公司 | A kind of L-band double frequency power rectifier circuit |
| CN110545078A (en) * | 2019-07-18 | 2019-12-06 | 电子科技大学 | Microstrip power amplifier |
| CN110896301A (en) * | 2019-11-20 | 2020-03-20 | 南京理工大学 | Dual-band filtering power amplifier |
| CN110896301B (en) * | 2019-11-20 | 2022-10-28 | 南京理工大学 | Dual-band filtering power amplifier |
| CN111371420A (en) * | 2019-12-10 | 2020-07-03 | 南京理工大学 | SIW filtering integrated F-type power amplifier |
| CN111371420B (en) * | 2019-12-10 | 2023-06-09 | 南京理工大学 | SIW filtering integrated F-type power amplifier |
| CN111654256A (en) * | 2020-05-22 | 2020-09-11 | 华南理工大学 | Double-frequency filtering power amplifier |
| CN112865716A (en) * | 2020-12-31 | 2021-05-28 | 四川天巡半导体科技有限责任公司 | Broadband high-efficiency power device based on multi-step branch matching network |
| CN112865716B (en) * | 2020-12-31 | 2023-03-28 | 四川天巡半导体科技有限责任公司 | Broadband high-efficiency power device based on multi-step branch matching network |
| CN114665836A (en) * | 2022-05-07 | 2022-06-24 | 南京大学 | Impedance matching Josephson parametric amplifier based on double-section quarter-wavelength conversion line |
| CN114665836B (en) * | 2022-05-07 | 2023-04-07 | 南京大学 | Impedance matching Josephson parametric amplifier based on double-section quarter-wavelength conversion line |
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Application publication date: 20190315 |