CN109457236A - A kind of air inlet top plate and metal-organic chemical vapor deposition equipment reactor - Google Patents
A kind of air inlet top plate and metal-organic chemical vapor deposition equipment reactor Download PDFInfo
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- CN109457236A CN109457236A CN201910008550.0A CN201910008550A CN109457236A CN 109457236 A CN109457236 A CN 109457236A CN 201910008550 A CN201910008550 A CN 201910008550A CN 109457236 A CN109457236 A CN 109457236A
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- Prior art keywords
- source gas
- gas
- venthole
- louver
- distribution grid
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 17
- 238000009423 ventilation Methods 0.000 claims abstract description 63
- 238000009826 distribution Methods 0.000 claims abstract description 46
- 238000009792 diffusion process Methods 0.000 claims abstract description 16
- 208000002925 dental caries Diseases 0.000 claims abstract description 12
- 238000006243 chemical reaction Methods 0.000 claims description 31
- 239000007787 solid Substances 0.000 claims description 3
- 238000013022 venting Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 17
- 239000007789 gas Substances 0.000 description 185
- 239000000463 material Substances 0.000 description 31
- 239000010408 film Substances 0.000 description 14
- 239000010409 thin film Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 10
- 239000007924 injection Substances 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000000243 solution Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000007770 graphite material Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45514—Mixing in close vicinity to the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
Abstract
The embodiment of the invention discloses a kind of air inlet top plate and metal-organic chemical vapor deposition equipment reactors, gas homogenizer in the air inlet top plate includes: the first distribution grid, multiple ventilation cavitys and the second distribution grid, there is source gas not to be mixed in gas homogenizer, first distribution grid is correspondingly arranged with inlet channel, multiple ventholes are provided on first distribution grid, multiple ventilation cavitys for homogenizing source gas and being extremely correspondingly arranged active gas transport with multiple ventholes, multiple ventilation cavitys, it is connected with the first distribution grid, for to there is source gas to be diffused, and by the active gas transport after diffusion to the second distribution grid, multiple louvers are provided on second distribution grid, multiple louvers are connected and are correspondingly arranged with multiple ventilation cavitys, for to thering is source gas to be homogenized and establish gas flowfield form.Technical solution of the present invention realizes the technical effect for improving the degree of homogenizing for having source gas and improving flow location form.
Description
Technical field
The present embodiments relate to metal-organic chemical vapor deposition equipment technical field more particularly to a kind of air inlet top plate and
Metal-organic chemical vapor deposition equipment reactor.
Background technique
Metal-organic chemical vapor deposition equipment (Metal-organic Chemical Vapor Deposition, MOCVD)
Equipment is the important equipment for preparing semiconductor film membrane module, is mainly used for growing GaN base (AlGaInN series material) and GaAs
The Group III-V semiconductor thin-film material and device of base (AlGaInP/AlGaInAs series material).
The basic growth course of MOCVD is: reaction gas being introduced in reaction chamber from gas source, recycles the intracorporal heating of chamber
Device heats the substrate on chip tray, to generate monocrystalline or polycrystal film on substrate.During MOCVD, on chip
Reactant source required for the film of growth is the flowing and diffusion for having source gas.There is source gas to flow and the process of diffusion
In also chemically react, growth particle by absorption and surface reaction, be finally combined into film lattice.Optionally, there is source gas
Body is respectively that include that group V element is nitrogenous first have source gas and second have source gas logical comprising iii group element containing gallium
Enter in reaction chamber and reacted, and then generates III-V group semi-conductor material film on substrate.
In the reaction growth course of MOCVD, the uniformity of institute's growth material and the utilization efficiency of source material are two
Important factor.The utilization rate of the uniformity and source material that make growth material is higher, and needing to meet first has source gas and the
Two have this two groups of gases of source gas, before entering reaction chamber, are not mixed and are respectively evenly distributed；Further, two kinds
There is source gas when entering reaction chamber, the flow location form of gas is preferable.
However, the prior art has source gas to homogenize to two kinds of injection, note usually is homogenized only with poroid or gap-like
Enter mode.However when homogenizing only with gas of the poroid mode to injection, the flow location form in exit is bad；When only
When being homogenized using gas of the gap-like mode to injection, gas to homogenize effect poor.It is single to be homogenized using poroid or gap-like
Injection mode will lead to the technical problem poor, uneven and low source material utilization in the film quality of substrate growth.
Summary of the invention
The present invention provides a kind of air inlet top plate and metal-organic chemical vapor deposition equipment reactor, to realize to improve having source gas
The degree of homogenizing of body and the technical effect of flow location form.
In a first aspect, the embodiment of the invention provides a kind of air inlet top plate, including upper cover plate and gas homogenizer, it is described
Mutually independent inlet channel is provided on upper cover plate, for that there will be source gas to each lead into gas homogenizer, feature exists
In, the gas homogenizer include: the first distribution grid, multiple ventilation cavitys and the second distribution grid, it is described to there is source gas to exist
It is not mixed in the gas homogenizer；
First distribution grid is correspondingly arranged with the inlet channel, is provided with multiple ventilations on first distribution grid
Hole, multiple venting cavities for homogenizing source gas and being extremely correspondingly arranged the active gas transport with the multiple venthole
Body；
The multiple ventilation cavity is connected with first distribution grid, for thering is source gas to be diffused to described, and
By the active gas transport after diffusion to the second distribution grid；
Multiple louvers are provided on second distribution grid, the multiple louver is connected with the multiple ventilation cavity
It is logical and be correspondingly arranged, for thering is source gas to be homogenized to described and establishing gas flowfield form；
Wherein, the diameter of the venthole is 0.5mm~5mm.
Further, of different size at the louver gas outlet.
Further, first distribution grid is fixedly connected with second distribution grid.
Further, further includes: multiple temperature control channels on second distribution grid, the multiple temperature control channel are set
It is correspondingly arranged respectively with the louver.
Further, the mutually independent inlet channel has source gas for first respectively, and second has source gas to be passed through institute
It states in gas homogenizer.
Further, the multiple venthole includes the first venthole and the second venthole, first venthole and institute
The second venthole interval setting and mutually indepedent is stated, is not connected to, has source gas and described second for receiving described first respectively
There is source gas, and first after homogenizing has source gas, second has source gas to be transported to the multiple ventilation cavity respectively.
Further, the multiple ventilation cavity includes the first ventilation cavity and the second ventilation cavity, first ventilation
Cavity and the second ventilation cavity are mutually indepedent, for being respectively described first to have source gas to have source gas to mention with described second
For diffusion space, and described first is set to have source gas and the second active gas diffusion into the multiple louver；It is described
First venthole is connected with the first ventilation cavity；Second venthole is connected with the second ventilation cavity.
Further, the multiple louver includes the first louver and the second louver, first louver and institute
The second louver interval setting and mutually indepedent is stated, for thering is source gas to have with described second described first after diffusion respectively
Source gas is homogenized；The first ventilation cavity is connected with first louver；It is described second ventilation cavity with it is described
Second louver is connected.
Further, the width at first louver gas outlet is greater than or equal at second louver gas outlet
Width.
Second aspect, the embodiment of the invention also provides a kind of metal-organic chemical vapor deposition equipment reactor, features
It is, further includes reaction chamber and the chip that is arranged in the reaction chamber including air inlet top plate described in the embodiment of the present invention
Pallet；
The chip tray includes chip tray ontology, boss and rotary connector；
The lower surface of the chip tray ontology is provided with the boss and is connected to the institute of the boss lower surface
State rotary connector；
The rotary connector is for the boss to be connected with rotary shaft；
The rotary shaft drives the chip tray ontology rotation.
The venthole of the first distribution grid is arranged in by that will have source gas to first pass through in the technical solution of the embodiment of the present invention,
Making, which has source gas to obtain emphasis, homogenizes, then has source gas to be passed through ventilation cavity after homogenizing, and makes air-flow satisfaction note extending transversely
Required flow location form when entering into louver solves in the prior art only with the mode of poroid mode or gap-like
To injection when thering is source gas to homogenize, having source gas gas field form bad or effect homogenized to gas due to exit
Fruit is poor, leads to the technical problem poor, uneven and low source material utilization in the film quality of substrate growth, realizes
Have source gas first pass through venthole improve have source gas homogenize effect, again by cavity of ventilating make active gas transverse spread from
And required flow location form when reaching gap-like injection, eventually by louver to thering is source gas to be homogenized and establish the stream of gas
Form, improves the degree of homogenizing and flow location form of source gas, and then makes the thin-film material crystal quality being prepared,
The even preferable technical effect of property.
Detailed description of the invention
In order to more clearly illustrate the technical scheme of the exemplary embodiment of the present invention, below to required in description embodiment
The attached drawing to be used does a simple introduction.Obviously, the attached drawing introduced is present invention a part of the embodiment to be described
Attached drawing, rather than whole attached drawings without creative efforts, may be used also for those of ordinary skill in the art
To obtain other attached drawings according to these attached drawings.
Fig. 1 is a kind of gas homogenizer structural schematic diagram provided by the embodiment of the present invention；
Fig. 2 is a kind of metal-organic chemical vapor deposition equipment reactor schematic diagram provided by the embodiment of the present invention；
Fig. 3 is a kind of air inlet top plate schematic cross-section provided by the embodiment of the present invention；
Fig. 4 is top view of the Fig. 3 along the section A-A '；
Fig. 5 is the partial schematic diagram of Fig. 3；
Fig. 6 is another partial schematic diagram of Fig. 3.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limiting the invention.It also should be noted that in order to just
Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.
Fig. 1 is a kind of gas homogenizer structural schematic diagram provided by the embodiment of the present invention；Fig. 2 is the embodiment of the present invention
A kind of provided metal-organic chemical vapor deposition equipment reactor schematic diagram；Fig. 3 is one kind provided by the embodiment of the present invention
Air inlet top plate schematic cross-section.
Referring to Fig. 1, Fig. 2 and Fig. 3, metal-organic chemical vapor deposition equipment reactor includes air inlet top plate, air inlet top plate packet
It includes: including upper cover plate and gas homogenizer, mutually independent inlet channel is provided on upper cover plate, for that will have source gas point
It is not passed through gas homogenizer, which is characterized in that gas homogenizer 10 includes: the first distribution grid 101, multiple ventilation cavitys
102 and second distribution grid 103, there is source gas not to be mixed in gas homogenizer；First distribution grid 101 and air inlet are logical
Road is correspondingly arranged, and is provided with multiple ventholes on the first distribution grid 101, for homogenized source gas and by active gas transport extremely
The multiple ventilation cavitys 102 being correspondingly arranged with multiple ventholes；Multiple ventilation cavitys 102, are connected with the first distribution grid 101,
For to there is source gas to be diffused, and by the active gas transport after diffusion to the second distribution grid 103；Second distribution grid 103
On be provided with multiple louvers, multiple louvers are connected and are correspondingly arranged with multiple ventilation cavitys 102, for there is source gas
It is homogenized and establishes gas flowfield form；Wherein, the diameter of venthole is 0.5mm~5mm.
Referring to fig. 2 and Fig. 3, before introducing technical solution of the present invention it should be noted that homogenizer upper table
Face is additionally provided with upper cover plate 104, and upper cover plate 104 and homogenizer 10, which are combined, constitutes air inlet top plate.In upper cover plate 104
On be additionally provided with mutually independent inlet channel, optionally, two inlet channels, first inlet channel 105 is for receiving the
Two have source gas, and the second inlet channel 106 has source gas for receiving first, wherein first has source gas and second to have source gas
Body is different gas.In a preferred case, also respectively two-way has source gas to be respectively provided with cavity, the cavity
For making there is source gas to carry out primary diffusion before reaching venthole, to make to homogenize effect after thering is source gas to enter venthole
Reach best.It should be noted that it is not to illustrate that the quantity of the first inlet channel has that although two 105 are marked on attached drawing 3
Two, be only a schematic diagram, and the quantity of the first inlet channel 105 is one.
The technical solution of the embodiment of the present invention will have source gas to first pass through the venthole of the first distribution grid is arranged in, makes active
Gas obtains emphasis and homogenizes, then has source gas to be passed through ventilation cavity after homogenizing, and is injected into air-flow satisfaction extending transversely logical
Required flow location form when in air cleft, solve in the prior art only with poroid mode or gap-like mode to injection
When thering is source gas to be homogenized, due to exit have source gas gas field form it is bad or to gas homogenize effect compared with
Difference leads to the technical problem second-rate, uneven and low source material utilization in the film crystal of substrate growth, realizes
Have source gas first pass through venthole improve have source gas homogenize effect, again by cavity of ventilating make active gas transverse spread from
And required flow location form when reaching gap-like injection, eventually by louver to thering is source gas to be homogenized and establish the stream of gas
Field form, improves the degree of homogenizing and flow location form of source gas, and then make thin-film material quality, the uniformity being prepared
Preferable technical effect.
It should be noted that for growth compound semiconductor material during metal-organic chemical vapor deposition equipment
Each component and dopant are all to enter in reaction chamber 107 in gaseous form, and III-V is formed on the substrate after hybrid reaction
Race's semiconductor film material and device.Due to the mainly Group III-V semiconductor thin-film material of formation, the film is being prepared
Need two parts to have source gas during material, i.e., it is described to there is source gas to there is source gas and second to have source gas including first,
Optionally, first has source gas to carry V group element, and second has source gas to carry group-III element, and being also possible to first has source gas
Group-III element is carried, second has source gas to carry V group element, it is not limited here.When preparing thin-film material, in order to avoid
The thin-film material of preparation generates other materials or is oxidized, it is also necessary to be not involved in metallorganic and chemistry occurs for hydride instead
The protective gas answered, optionally, nitrogen, hydrogen or argon gas, therefore first has source gas and second to have the source gas property of can choose
Include one of protective gas or a variety of protective gas not reacted mutually, to reach by there is source gas system
When standby Group III-V semiconductor thin-film material, other reactants are not generated, it can be understood as, unintentional incorporation impurity is not generated
Technical effect.
With continued reference to Fig. 3, multiple ventholes are set, multiple ventholes include the first venthole on the first distribution grid 101
1011 and second venthole 1012, the first venthole 1011 and the setting of the second venthole 1012 interval and mutually indepedent, it is not connected to,
There is source gas and second to have source gas for receiving be passed through from inlet channel first respectively, and has source gas and second to first
There is source gas to be homogenized, there is source gas to be transported to multiple ventilation cavitys 102 respectively after homogenizing.
Wherein, multiple ventholes are provided on the first distribution grid, that is the quantity of venthole there can be many.Due to
Venthole is that have source gas to be homogenized and transported two classes, therefore the type of venthole can be divided into two kinds, optionally, the
One venthole and the second venthole.It should be noted that described the first venthole and the second venthole is to distinguish at this time
Venthole needs to transport the different restrictions for having source gas to be made.It is used for it is to be understood that multiple ventholes are divided into two classes
Transporting different types of has source gas.Wherein, the first venthole and the air inlet size of the second venthole can it is identical can also be with
Difference, user can be configured according to actual needs.
Fig. 4 is Fig. 3 along the sectional view of A-A ', referring to fig. 4, it can be seen that much through-holes and through-hole are arranged in column,
Combine the shape as spray head, multiple ventholes of first row can be denoted as to the first venthole, secondary series it is multiple
Venthole is denoted as the second venthole, and the first venthole and the second venthole interval are arranged, that is to say, that lead to if odd number is classified as first
Stomata, then even number is classified as the second venthole, conversely, if odd number is classified as the second venthole, then even number is classified as the first venthole.
The quantity of first venthole and the quantity of the second venthole have multiple.
Illustratively, a certain column, it is upper that the quantity of the first venthole, which can be up to a hundred or the quantity of the second venthole,
Hundred.The advantages of this arrangement are as follows multiple ventholes can be passed through before two classes have source gas to enter reaction chamber 107
It is homogenized, obtaining homogenizing effect preferably has source gas.
It should be noted that the diameter of venthole can be the same or different, user can be arranged according to the actual situation
The diameter of venthole, optionally, the diameter of venthole is in 0.5mm~5mm.
In order to improve the uniformity of growth material and the utilization rate of source material, first has source gas and second to have source gas logical
Chang Buyi is prematurely mixed, and mainly has both sides factor, first is that when the substrate on chip tray is heated to reaction temperature,
The temperature of raying is also very high above substrate, two kinds of mixed gas for having a source gas, in the sufficiently high other spaces of temperature
Pre-reaction can occur and form crystalline solid, crystalline solid is contaminated with Diffusion of gas stream at this time, causes to be formed on the substrate
Group III-V semiconductor thin-film material purity it is lower, crystal quality is poor；On the other hand it is, using vapour deposition process preparation half
When conductor thin film, gas flowfield form is critically important, and when gas flowfield form is bad, may result in two groups has source gas to reach
It is just prematurely mixed before wafer surface, is reduced so as to cause source material utilization and the quality of materials grown, therefore,
Source gas optimal mode before entering reaction chamber 107 is not to be mixed.In order to reach this purpose, optionally, the
One venthole is not connected to mutually with the second venthole, that is, the first venthole 1011 and the second venthole 1012 on the first distribution grid
Independently of each other.Wherein, being arranged independently of each other is advantageous in that: two kinds can be made to have source gas to have inside homogenizer mutually solely
Vertical propagation path, so that realizing has source gas before entering reaction chamber, the technical effect not being mixed.
Wherein, on the first distribution grid, venthole can be one and arrange setting, it is possible to understand that are as follows: it is a certain wherein
Column are all the first venthole or the second venthole.Interval setting, optionally, referring to fig. 4, every the first venthole of two column 1011 it
Between second venthole of column 1012 is set.
It should also be noted that, venthole and have source gas be correspondingly arranged mode include at least two, optionally, first has
For source gas (carrying V group element) through the first venthole 1011, second has source gas (carrying group-III element) through the second venthole
1012 enter reaction chamber；Alternatively, first has source gas (carrying V group element) to have source gas (to take through the second venthole 1012, second
Band group-III element) through the first venthole 1011 enter reaction chamber；Preferably, first has source gas (carrying V group element) through first
Venthole 1011, second has source gas (carrying group-III element) to enter reaction chamber through the second venthole 1012.
Wherein, the diameter of the diameter of the first venthole 1011 and the second venthole 1012 is between 0.5mm~5mm, and first
The diameter of venthole and the diameter of the second venthole can be the same or different, and user can be configured according to demand, can
Choosing, the diameter of the first venthole is 3mm, and the diameter of the second venthole is 1mm.There is source gas process in the embodiment of the present invention
It can make what gas concentrated to homogenize after venthole, effectively improve source gas homogenizes effect.
When there is source gas only to reach reaction chamber by venthole, it is understood that there may be have the flow location form and matching degree of source gas
Bad, the utilization rate so as to cause source gas is lower and the second-rate technical problem of film crystal of preparation.Therefore, upper
On the basis of stating device, it is also provided with the ventilation cavity 102 being connected with venthole.Wherein, ventilation cavity 102 includes first logical
Air cavity 1021 and the second ventilation cavity 1022, the first ventilation cavity 1021 and the second ventilation cavity 1022 are mutually indepedent, are used for
Respectively first has source gas to have source gas to provide diffusion space with second；First venthole 1011 and the first ventilation cavity 1021
It is connected；Second venthole 1012 is connected with the second ventilation cavity 1022.
First has source gas and second to have source gas that cannot mix before reaching reaction chamber 107, similarly, cavity of ventilating
102 may be set to be it is multiple, for receiving have source gas by the first of the first venthole and pass through the second venthole the
Two have source gas, to there is source gas to provide a horizontal proliferation space, and for further increase the uniformity of source gas with
And flow location form lays the foundation, it can be understood as laterally homogenize along the strip direction of ventilation cavity.Wherein, from depression angle
From the point of view of degree, the length of multiple cavities can be corresponding with the length of each column venthole, for there is source gas to provide an expansion
Space is dissipated, to allow have source gas that can carry out further primary after exporting in the first venthole and the second venthole
Diffusion, so that venthole reaches best to the effect that homogenizes for having source gas.That is, each column venthole is correspondingly arranged
One ventilation cavity, i.e. first row venthole are correspondingly arranged a ventilation cavity, secondary series venthole is correspondingly arranged a ventilation
Cavity, and so on, while the corresponding ventilation cavity of each column venthole is mutually indepedent, is not connected to mutually.
The technical effect for being optimal the flow location form for having source gas and matching degree, on the basis of above-mentioned technical proposal
On be provided with multiple louvers.Illustratively, louver includes the first louver 1031 and the second louver 1032, the first ventilation
Seam 1031 with second louver 1032 interval setting and independently of each other, for having source gas and second to first after diffusion respectively
There is source gas to be homogenized and establishes gas flowfield form；Referring to Fig. 3, the first ventilation cavity 1021 and 1031 phase of the first louver
Connection；Second ventilation cavity 1022 is connected with the second louver 1032.
Wherein, the shape of louver can there are many, optional horn mouth moulding, straight flange moulding, multisection type gradual change moulding
Or camber line moulding etc., shape is different.Louver in the technical solution of the embodiment of the present invention need to meet to have source gas into
Row homogenizes and establishes the flow field patterns of gas, and shape size can be set according to actual needs, it is not limited here.
Illustratively, reference can be made to Fig. 3, the first louver 1031 are respectively straight flange broadening formation, the second louver 1032 is straight flange type, this
When the first louver 1031 and louver at 1032 air inlet of the second louver width can be the same or different, according to reality
The demand of border application is designed；The width in louver exit, the width that can be the first louver are more than or equal to second and lead to
The width of air cleft, it is preferred that the width of the first louver 1031 is in 20mm or so, and the width of the second louver 1032 is in 0.3mm
To between 5mm.
The quantity of louver can be multiple, and optionally, the quantity of louver is identical as the ventilation quantity of cavity, and corresponding
Setting.It is mutually indepedent between each louver it is to be understood that being provided with louver below each ventilation cavity
, and be not connected to mutually, that is, there is source gas after exporting in ventilation cavity, can also pass through louver.The width in louver exit
It may be the same or different, user can be configured according to actual needs.Optionally, the width in louver exit is not
Together, this is because when preparing thin-film material, it is understood that there may be it is different at least a kind of demand for having source gas, demand can be made
Measuring more has source gas to flow out from exporting in biggish louver.
Wherein, the mode that is correspondingly arranged of venthole, ventilation cavity and louver includes at least one.It can be respectively referring to figure
5 and Fig. 6, optionally, first has source gas to pass through the first venthole 1011, the first ventilation cavity 1021 and the first louver
1031, correspondingly, second has source gas to pass through the second venthole 1012, the second ventilation cavity 1022 and the second louver
1032；Alternatively, first has source gas to pass through the second venthole 1012 ', the first ventilation cavity 1021 ' and the first louver
1031 ', correspondingly, second has source gas to pass through the first venthole 1011 ', the second ventilation cavity 1022 ' and the second louver
1032’。
It should be noted that the technical solution of the embodiment of the present invention, first has source gas to export from the first louver, the
Two have source gas to export from the second louver, the advantages of this arrangement are as follows, it, can during thering is source gas to participate in reaction
There can be the demand difference to gas with various, corresponding gas flow setting is not also identical.In order to make to have source gas sufficiently anti-
It answers, active gas flow can be made big, i.e., what demand was big has source gas to flow out from the biggish louver in outlet.
There is source gas to first pass through venthole to be homogenized, ventilation cavity, which receives after homogenizing, source gas, and makes have source gas
Extending transversely be trimmed to of body meets the required flow location form of louver, and such setting both avoided between venthole and louver
Close coupling bring airflow design obstacle, also improves the uniformity and flow location form of gas.
Further, the first distribution grid 101 is fixedly connected with the second distribution grid 103, it should be noted that the first distribution grid
It is fixed together with the second distribution grid, optionally, is fixed together by welding, avoid and work as after being fixedly connected
When thering is source gas to pass through venthole, ventilation cavity and louver respectively to enter reaction chamber and reacted, since gas trains leakage is led
Cause prepares the poor technical problem of film quality.
With continued reference to Fig. 2, temperature is excessively high when in order to avoid there is source gas to enter reaction chamber 107, needs to make to be directly facing anti-
The louver of chamber and pallet is answered to be maintained at suitable temperature.Wherein, temperature control plate can be set in the inside of the second distribution grid 103,
It is provided on temperature control plate 108 including multiple temperature control channels, it can be understood as, on the temperature control plate 108 inside the second distribution grid 103
It is also provided with multiple temperature control channels.Further, the multiple temperature control channel respectively with the first louver 1031, the second louver
1032 are correspondingly arranged.It should be noted that each louver has the corresponding setting in temperature control channel, between temperature control channel
Connection type user can be configured according to actual needs, it is not limited here.Simultaneously as temperature control plate 108 and cooling
Chamber is connected, and can control the temperature of temperature control plate, and then guarantees gas before entering reaction chamber 107 far from the building ring of high temperature
Border, realization meet the needs of preparing semiconductor film material.
Metal-organic chemical vapor deposition equipment prepares semiconductive thin film needs and completes in reaction chamber 107, therefore metal has
Machine object CVD reactor further includes reaction chamber 107 and the chip tray that is arranged in reaction chamber 107；Chip tray
Including chip tray ontology 1091, boss 1092 and the rotary connector 1093, in the following table of chip tray ontology 1091
Face is provided with boss 1092 and is connected to the rotary connector 1093 of 1092 lower surface of boss；Rotary connector 1093 is used for will
Boss 1092 is connected with rotary shaft 110；Rotary shaft 110 drives chip tray ontology 1091 to rotate, and for details, reference can be made to Fig. 2.
With continued reference to Fig. 2, chip tray ontology 1091 uses graphite material, is mainly used for placing lining when epitaxial wafer is grown
Bottom, in other words, chip tray is for placing substrate, when to there is source gas to enter reaction chamber 107, deposited semiconductor on substrate
Thin-film material.It should be noted that during practical application, it is thin also to plate one layer of silicon carbide in graphite surface for chip tray
Film layer.The lower surface of chip tray ontology 1091 is provided with boss 1092, optionally, boss 1092 also uses graphite material,
Shape is rotary table or cylinder etc.；The lower surface of boss 1092 is provided with rotary connector 1093, it is preferred that rotary connector
1093 be rotary table, taper etc..It is connect by chip tray ontology by rotary connector 1093 with boss 1092 with rotary shaft 110
Together.When rotary shaft 110 rotates, it is able to drive the rotation of chip tray ontology 1091.It should be noted that chip tray
Be arranged in the reaction chamber 107 of metal-organic chemical vapor deposition equipment reactor, have source gas by venthole, ventilation cavity with
And louver enters in reaction chamber 107, and reaches the multiple substrate surfaces placed on chip tray, and then forms iii-v half
Conductor thin film material.
Certainly, the tray body of chip tray, boss and rotary connector can be integrally formed.
The embodiment of the present invention is provided in the metal-organic chemical vapor deposition equipment reactor of the embodiment of the present invention to be provided
Gas homogenizer, improve the degree of homogenizing and flow location form of source gas, so make the thin-film material being prepared cause
Close property, technical effect with good uniformity.
Note that the above is only a better embodiment of the present invention and the applied technical principle.It will be appreciated by those skilled in the art that
The invention is not limited to the specific embodiments described herein, be able to carry out for a person skilled in the art it is various it is apparent variation,
It readjusts and substitutes without departing from protection scope of the present invention.Therefore, although being carried out by above embodiments to the present invention
It is described in further detail, but the present invention is not limited to the above embodiments only, without departing from the inventive concept, also
It may include more other equivalent embodiments, and the scope of the invention is determined by the scope of the appended claims.
Claims (10)
1. a kind of air inlet top plate, including upper cover plate and gas homogenizer, mutually independent air inlet is provided on the upper cover plate
Channel, for that will there is source gas to each lead into gas homogenizer, which is characterized in that the gas homogenizer includes: first
Distribution grid, multiple ventilation cavitys and the second distribution grid, it is described to there is source gas not to be mixed in the gas homogenizer；
First distribution grid is correspondingly arranged with the inlet channel, and multiple ventholes are provided on first distribution grid, is used
In the multiple ventilation cavitys for homogenizing source gas and being extremely correspondingly arranged the active gas transport with the multiple venthole；
The multiple ventilation cavity is connected with first distribution grid, for having source gas to be diffused to described, and will expand
The active gas transport after dissipating is to the second distribution grid；
Be provided with multiple louvers on second distribution grid, the multiple louver be connected with the multiple ventilation cavity and
It is correspondingly arranged, for thering is source gas to be homogenized to described and establishing gas flowfield form；
Wherein, the diameter of the venthole is 0.5mm~5mm.
2. air inlet top plate according to claim 1, which is characterized in that width of the multiple louver at gas outlet is not
Together.
3. air inlet top plate according to claim 1, which is characterized in that first distribution grid and second distribution grid are solid
Fixed connection.
4. air inlet top plate according to claim 1, which is characterized in that further include: it is arranged on second distribution grid
Multiple temperature control channels, the multiple temperature control channel are correspondingly arranged with the louver respectively.
5. air inlet top plate according to claim 1, which is characterized in that the mutually independent inlet channel is respectively by first
There is source gas, second has source gas to be passed through in the gas homogenizer.
6. air inlet top plate according to claim 5, which is characterized in that the multiple venthole includes the first venthole and the
Two ventholes, first venthole and second venthole interval are arranged and mutually indepedent, are not connected to, for receiving respectively
Described first has source gas and described second to have source gas, and first after homogenizing has source gas, and second has source gas difference
It is transported to the multiple ventilation cavity.
7. air inlet top plate according to claim 6, which is characterized in that the multiple ventilation cavity includes: the first venting cavity
Body and the second ventilation cavity；
The first ventilation cavity and the described second cavity of ventilating are mutually indepedent, for being respectively described first to have source gas and institute
Stating second has source gas to provide diffusion space, and makes described first to have source gas and the second active gas diffusion to described more
In a louver；
First venthole is connected with the first ventilation cavity, second venthole and the second ventilation cavity phase
Connection.
8. air inlet top plate according to claim 7, which is characterized in that the multiple louver includes the first louver and the
Two louvers；
First louver and second louver interval are arranged and mutually indepedent, for respectively to described the after diffusion
One has source gas to have source gas to be homogenized with described second；The first ventilation cavity is connected with first louver；
The second ventilation cavity is connected with second louver.
9. air inlet top plate according to claim 8, which is characterized in that the width at first louver gas outlet is greater than
Or equal to the width at second louver gas outlet.
10. a kind of metal-organic chemical vapor deposition equipment reactor, which is characterized in that any described including claim 1-9
The chip tray that air inlet top plate further includes reaction chamber and is arranged in the reaction chamber；
The chip tray includes chip tray ontology, boss and rotary connector；
The lower surface of the chip tray ontology is provided with the boss and is connected to the rotation of the boss lower surface
Turn connector；
The rotary connector is for the boss to be connected with rotary shaft；
The rotary shaft drives the chip tray ontology rotation.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910008550.0A CN109457236A (en) | 2019-01-04 | 2019-01-04 | A kind of air inlet top plate and metal-organic chemical vapor deposition equipment reactor |
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| CN201910008550.0A CN109457236A (en) | 2019-01-04 | 2019-01-04 | A kind of air inlet top plate and metal-organic chemical vapor deposition equipment reactor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114059164A (en) * | 2022-01-06 | 2022-02-18 | 芯三代半导体科技(苏州)有限公司 | Silicon carbide epitaxial growth device |
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| US20130299009A1 (en) * | 2012-05-11 | 2013-11-14 | Advanced Micro-Fabrication Equipment Inc, Shanghai | Gas showerhead, method for making the same and thin film growth reactor |
| KR20150077107A (en) * | 2013-12-27 | 2015-07-07 | 엘아이지인베니아 주식회사 | Chemical Vapor Deposition |
| CN209024641U (en) * | 2019-01-04 | 2019-06-25 | 中晟光电设备（上海）股份有限公司 | A kind of air inlet top plate and metal-organic chemical vapor deposition equipment reactor |
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| US20090169744A1 (en) * | 2006-09-16 | 2009-07-02 | Piezonics Co., Ltd | Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases postively and method thereof |
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| US20130299009A1 (en) * | 2012-05-11 | 2013-11-14 | Advanced Micro-Fabrication Equipment Inc, Shanghai | Gas showerhead, method for making the same and thin film growth reactor |
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