CN109449225A - Two selenizing palladium membranes/n-type silicon heterojunction photoelectric detector and preparation method thereof - Google Patents
Two selenizing palladium membranes/n-type silicon heterojunction photoelectric detector and preparation method thereof Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 147
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 147
- 239000010703 silicon Substances 0.000 title claims abstract description 147
- 229910052763 palladium Inorganic materials 0.000 title claims abstract description 101
- 239000012528 membrane Substances 0.000 title claims abstract description 88
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 19
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- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 9
- 238000010894 electron beam technology Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 230000004044 response Effects 0.000 abstract description 11
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
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Abstract
It is n-type silicon basal electrode to be set in its lower surface, on it surface portion region overlay insulating layer using n-type silicon base as the base area of photodetector the invention discloses two selenizing palladium membranes/n-type silicon heterojunction photoelectric detector and preparation method thereof；Two selenizing palladiums contact electrode is covered on the insulating layer, and the boundary that two selenizing palladiums contact electrode is no more than the boundary of insulating layer；Two selenizing palladium membranes are laid on two selenizing palladiums contact electrode, two selenizing palladium membranes a part and two selenizing palladiums contact electrode form Ohmic contact, and the part that remainder and n-type silicon substrate surface do not cover insulating layer forms hetero-junctions.Photodetector simple process of the invention, low in cost, current on/off ratio is big, fast response time.
Description
Technical field
The invention belongs to photodetector technical fields, and in particular to a kind of two selenizing palladium membranes/silicon heterogenous light of n-type
Electric explorer and preparation method thereof.
Background technique
Photodetector is a kind of photoelectric device that can convert optical signals into electric signal.Low-cost and high-performance photodetection
Device is including that image sensing, optic communication, fire detection, biomedical imaging, environmental monitoring, space exploration and safety detection etc. are all
More scientific researches and industrial technical field have important application value, thus have obtained people and widely paid close attention to.
Currently, the photoelectricity based on crystalline silicon is visited at widely used visible light-near infrared light wave band (wavelength < 1100nm)
It surveys device and occupies the main market share.Have benefited from the processing technology of maturation and the favorable compatibility with silicon base CMOS technique, people
Successfully develop a variety of Si-based photodetectors with different components structure, including metal-semiconductor-metal photodetection
Device, p-n (p-i-n) knot and schottky junction photodiode etc..Wherein, p-n (p-i-n) knot and schottky junction photodiode tool
There is intrinsic built in field, the separation and transmission of photo-generated carrier can be effectively facilitated, thus in high speed optoelectronic detection and low function
Consuming photodetection field has important application.But the methods of High temperature diffusion or ion implanting system are generallyd use in commercialization
Standby silicon p-n (p-i-n) is tied, although preferable silicon p-n (p-i-n) knot of quality can be prepared, unavoidably there are a series of disadvantages,
Such as it is related to complicated cumbersome preparation flow, needs using expensive instrument and equipment, it is high so as to cause the cost of device.Separately
On the one hand, it is influenced by blocking for metal electrode with factors such as the diffusion effects of metal ion, silicon Schotty PIN Junction detector PIN is often deposited
The disadvantages of the absorption efficiency to detected light is high, there are more defects in device, photodetector is significantly reduced
Performance.These factors seriously constrain the further development and extensive use of Si-based photodetectors.
Summary of the invention
The present invention be in order to avoid above-mentioned existing deficiencies in the technology, provide a kind of device technology it is simple, at
This cheap two selenizing palladium membranes/n-type silicon heterojunction photoelectric detector, to which the electricity of photodetector can be effectively improved
Flow the performances such as on-off ratio, response speed.
The present invention adopts the following technical scheme that in order to solve the technical problem
Two selenizing palladium membranes/n-type silicon heterojunction photoelectric detector of the invention, it is characterized in that: using n-type silicon base as
N-type silicon basal electrode is arranged in the lower surface of the n-type silicon base in the base area of the photodetector；In the n-type silicon
The upper surface of substrate covers insulating layer, and the area of the insulating layer is 1/5 to the 4/5 of the n-type silicon area of base, described exhausted
Boundary of the boundary of edge layer without departing from the n-type silicon base；Two selenizing palladiums contact electrode is covered on the insulating layer, it is described
Two selenizing palladiums contact boundary of the boundary without departing from the insulating layer of electrode；Two selenium are laid on two selenizings palladium contact electrode
Change palladium membranes, described two selenizings palladium membranes a part is contacted with two selenizing palladiums contact electrode, on remainder and n-type silicon base
Surface does not cover the part contact of insulating layer, the boundary of the boundary of the two selenizings palladium membranes without departing from the n-type silicon base；
The two selenizings palladium membranes and two selenizing palladiums contact electrode are Ohmic contact, and the two selenizings palladium membranes is formed with n-type silicon base
Hetero-junctions.
Further, the insulating layer is using silica, silicon nitride, aluminium oxide or hafnium oxide as material, the insulation
Layer with a thickness of 30-300nm.
Further, the n-type silicon basal electrode is In-Ga alloy electrode or Ag electrode, the n-type silicon base electricity
Pole with a thickness of 30-500nm.
Further, the two selenizings palladium contact electrode is Au electrode, Pt electrode or Pd electrode, the two selenizings palladium contact
Electrode with a thickness of 30-300nm.
Further, the n-type silicon substrate uses with a thickness of 100-800 μm, resistivity as the n-type of 0.1-100 Ω/cm
Lightly doped silicon wafer.
Further, the two selenizings palladium membranes with a thickness of 5-40nm.
The preparation method of two selenizing palladium membranes/n-type silicon heterojunction photoelectric detector of the invention, is to carry out as follows:
(1) n-type lightly doped silicon wafer is placed in the hydrofluoric acid solution or BOE etching liquid that mass concentration is 5%-10%
Etching 5-10 minutes removes the natural oxidizing layer on n-type lightly doped silicon wafer surface, is washed and dried after taking-up, obtain n-type
Silicon base；The BOE etching liquid is by 20g NH4F and 7mL mass concentration not less than 40% hydrofluoric acid be added to 30mL go from
The mixed liquor formed in sub- water；
(2) use magnetron sputtering coating method in the upper surface area coverage of the n-type silicon base for the n-type silicon substrate
The insulating layer of 1/5 to the 4/5 of floor space；
(3) two selenizing palladiums contact electrode, the two selenizings palladium are covered on the insulating layer using electron beam film plating process
Contact boundary of the boundary without departing from the insulating layer of electrode；
(4) two selenizing palladium membranes are laid on two selenizings palladium contact electrode, described two selenizings palladium membranes a part with
Two selenizing palladiums contact electrode contact, and remainder is contacted with the part that n-type silicon upper surface of substrate does not cover insulating layer, and described two
Boundary of the boundary of selenizing palladium membranes without departing from the n-type silicon base；
(5) using smearing or electron beam film plating process in the lower surface of n-type silicon base setting n-type silicon base electricity
Pole obtains two selenizing palladium membranes/n-type silicon heterojunction photoelectric detector.
Compared with the prior art, the invention has the advantages that:
1, two selenizing palladium membranes/n-type silicon heterojunction photoelectric detector in the present invention, both can use silicon to visible light-
The high-absorbility of near infrared light, and can be in conjunction with the advantages that the high absorption coefficient of light of two selenizing palladium membranes and high conductivity, to mention
Rise the efficiency of transmission of the absorption efficiency and photo-generated carrier to detection light；Detector of the invention is 300- to wave-length coverage
The detection light of 1100nm has high responsiveness, and the current on/off ratio of detector is big, fast response time.
2 present invention devise a kind of simple process and low-cost method preparation two selenizing palladium membranes/n-type silicon is heterogeneous
Photodetector is tied, the p-type silicon being introduced into two selenizing palladium membranes substitution conventional photodetectors is avoided using High temperature diffusion
And ion implantation process, and expensive instrument and equipment, reduce device preparation cost.
3, two selenizing palladium membranes/n-type silicon heterojunction photoelectric detector in the present invention may operate under no-voltage, nothing
External energy need to be consumed, thus can effectively reduce power consumption.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of two selenizing palladium membranes/n-type silicon heterojunction photoelectric detector of the invention, figure label: 1
For n-type silicon basal electrode；2 be n-type silicon base；3 be insulating layer；4 contact electrode for two selenizing palladiums；5 be two selenizing palladium membranes；
Fig. 2 be in the embodiment of the present invention 1 two selenizing palladium membranes/n-type silicon heterojunction photoelectric detector respectively in no light and
Wavelength is 850nm, intensity 12.3mW/cm2Illumination under current-voltage characteristic curve；
Fig. 3 is two selenizing palladium membranes/n-type silicon heterojunction photoelectric detector in the embodiment of the present invention 1 in zero operating voltage
Under, wavelength 850nm, intensity 12.3mW/cm2Illumination under time response curve；
Fig. 4 be in the embodiment of the present invention 2 two selenizing palladium membranes/n-type silicon heterojunction photoelectric detector respectively in no light and
Wavelength is 850nm, intensity 12.3mW/cm2Illumination under current-voltage characteristic curve；
Fig. 5 is two selenizing palladium membranes/n-type silicon heterojunction photoelectric detector in the embodiment of the present invention 2 in zero operating voltage
Under, wavelength 850nm, intensity 12.3mW/cm2Illumination under time response curve.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below with reference to embodiment to this hair
Bright specific embodiment is described in detail.The following contents is only to design example of the invention and explanation, institute
Belong to those skilled in the art to make various modifications or additions to the described embodiments or using similar
Mode substitutes, and as long as it does not deviate from the concept of invention or beyond the scope defined by this claim, should belong to the present invention
Protection scope.
Embodiment 1
As shown in Figure 1, two selenizing palladium membranes/n-type silicon heterojunction photoelectric detector structure in the present embodiment are as follows: with n-
N-type silicon basal electrode 1 is arranged in the lower surface of n-type silicon base 2 in base area of the type silicon base 2 as photodetector；In n-type
The upper surface of silicon base 2 covers insulating layer 3, and the area of insulating layer 3 is 1/5 to the 2/3 of 2 area of n-type silicon base, insulating layer 3
Boundary of the boundary without departing from n-type silicon base 2；Two selenizing palladiums contact electrode 4 is covered on the insulating layer 3, and two selenizing palladiums contact electrode
Boundary of 4 boundary without departing from insulating layer 3；Two selenizing palladium membranes 5 are laid on two selenizing palladiums contact electrode 4, two selenizing palladiums are thin
5 a part of film is contacted with two selenizing palladiums contact electrode 4, and remainder does not cover the portion of insulating layer 3 with 2 upper surface of n-type silicon base
Tap touching, the boundary of the boundaries of two selenizing palladium membranes 5 without departing from n-type silicon base 2；Two selenizing palladium membranes 5 are contacted with two selenizing palladiums
Electrode 4 is Ohmic contact, and two selenizing palladium membranes 5 form hetero-junctions with n-type silicon base 2.
Specifically, n-type silicon basal electrode 1 is the In-Ga alloy electrode with a thickness of 400nm.
Specifically, n-type silicon base 2 uses with a thickness of 300 μm, resistivity as 0.5 Ω/cm n-type lightly doped silicon wafer.
Specifically, insulating layer 3 is the silica with a thickness of 300nm.
Specifically, two selenizing palladiums contact electrode 4 is the Au electrode with a thickness of 50nm.
Specifically, two selenizing palladium membranes 5 are with a thickness of 10nm.
Two selenizing palladium membranes/n-type silicon heterojunction photoelectric detector preparation method, is as follows in the present embodiment
It carries out:
It (1) is 1cm × 1cm by area, resistivity is 0.5 Ω/cm, is placed on a thickness of 300 μm of n-type lightly doped silicon wafer
It is etched 5 minutes in the hydrofluoric acid solution that mass concentration is 5%, removes the natural oxidizing layer on n-type lightly doped silicon wafer surface, taken out
Successively respectively it is cleaned by ultrasonic 10 minutes with acetone, alcohol, deionized water afterwards, and with being dried with nitrogen, obtains n-type silicon base.
(2) the 1/4 of n-type silicon base is covered with mask, using magnetron sputtering coating method, with purity for 99.9%
Silicon oxide target be material, vacuum degree be 4 × 10-3Pa is not masked the part plating 300nm oxidation of version covering in n-type silicon base
Silicon is as insulating layer；
(3) electron beam film plating process is used, is 6.7 × 10 in vacuum degree-3Pa is hereinafter, vapor deposition area is small on the insulating layer 3
Electrode is contacted as two selenizing palladiums in insulating layer area, with a thickness of the Au electrode of 50nm；
(4) the two selenizing palladium membranes that area is less than n-type silicon area of base, two selenium are laid on two selenizing palladiums contact electrode
Change palladium membranes a part to contact with two selenizing palladiums contact electrode, remainder and n-type silicon upper surface of substrate do not cover insulating layer
Part contacts.
(5) using smear method be completed (2), (3), (4) three steps n-type silicon base lower surface prepare In-Ga
Alloy obtains two selenizing palladium membranes/n-type silicon heterojunction photoelectric detector as n-type silicon basal electrode.
Two above-mentioned selenizing palladium membranes 5 are prepared by hot assist conversion method, the specific steps are as follows:
A. electron beam film plating process is used, is 6.7 × 10 in vacuum degree-3Pa in clean oxidation silicon base hereinafter, steam
Plate the palladium membranes with a thickness of 3nm.
B., the oxidation silicon base of surface covering palladium membranes is put into the right warm area of double temperature-area tubular furnaces, 0.1g purity will be filled
The left warm area of double temperature-area tubular furnaces is put into for the porcelain boat of 99.99% selenium powder；Being passed through the argon gas that flow is 50sccm is protection gas
Body, by left temperature-raising region temperature raising to 220 DEG C, by right temperature-raising region temperature raising to 450 DEG C, keeping pressure in tube furnace is 260Pa；Remain above-mentioned anti-
After answering condition 1h, the heating system of double temperature-area tubular furnaces is closed, continues to be passed through the argon gas protective gas that flow is 50sccm, etc.
Porcelain boat and oxidation silicon base are taken out when double temperature-area tubular furnaces are cooled to room temperature, oxidation silicon substrate surface growth there are two selenizing palladiums thin
Film, two selenizing palladium membranes are with a thickness of 10nm.
C. on surface, growth has the upper surface of the oxidation silicon base of two selenizing palladium membranes dense with revolving speed 3000rpm spin quality
Then oxidation silicon base is put into NaOH solution by the PMMA that degree is 5%, shell completely with oxidation silicon base to two selenizing palladium membranes
From later, two selenizing palladium membranes are transferred in deionized water and are cleaned, obtains two selenizing palladium membranes.
Two selenizing palladium membranes/n-type silicon heterojunction photoelectric detector prepared by the present embodiment is under dark and wavelength is
850nm, intensity 12.3mW/cm2Illumination under current-voltage characteristic curve as shown in Fig. 2, detecting utensil as seen from the figure
There is apparent photoelectric response characteristic.
Two selenizing palladium membranes/n-type silicon heterojunction photoelectric detector is under zero operating voltage prepared by the present embodiment, wave
A length of 850nm, intensity 12.3mW/cm2Illumination under time response curve as shown in figure 3, as can be seen from the figure detecting
Device is very sensitive to detected light, and current on/off ratio reaches 2 × 105, and there is ultrafast response speed.Furthermore two selenium prepared
Change palladium membranes/n-type silicon heterojunction photoelectric detector can work normally under zero operating voltage, can effectively reduce device power consumption.
Embodiment 2
As shown in Figure 1, two selenizing palladium membranes/n-type silicon heterojunction photoelectric detector structure in the present embodiment are as follows: with n-
N-type silicon basal electrode 1 is arranged in the lower surface of n-type silicon base 2 in base area of the type silicon base 2 as photodetector；In n-type
The upper surface of silicon base 2 covers insulating layer 3, and the area of insulating layer 3 is 1/5 to the 2/3 of 2 area of n-type silicon base, insulating layer 3
Boundary of the boundary without departing from n-type silicon base 2；Two selenizing palladiums contact electrode 4 is covered on the insulating layer 3, and two selenizing palladiums contact electrode
Boundary of 4 boundary without departing from insulating layer 3；Two selenizing palladium membranes 5 are laid on two selenizing palladiums contact electrode 4, two selenizing palladiums are thin
5 a part of film is contacted with two selenizing palladiums contact electrode 4, and remainder does not cover the portion of insulating layer 3 with 2 upper surface of n-type silicon base
Tap touching, the boundary of the boundaries of two selenizing palladium membranes 5 without departing from n-type silicon base 2；Two selenizing palladium membranes 5 are contacted with two selenizing palladiums
Electrode 4 is Ohmic contact, and two selenizing palladium membranes 5 form hetero-junctions with n-type silicon base 2.
Specifically, n-type silicon basal electrode 1 is the Ag electrode with a thickness of 80nm.
Specifically, n-type silicon base 2 uses with a thickness of 600 μm, resistivity as 50 Ω/cm n-type lightly doped silicon wafer.
Specifically, insulating layer 3 is the aluminium oxide with a thickness of 60nm.
Specifically, two selenizing palladiums contact electrode 4 is the Pd electrode with a thickness of 250nm.
Specifically, two selenizing palladium membranes 5 are with a thickness of 35nm.
Two selenizing palladium membranes/n-type silicon heterojunction photoelectric detector preparation method, is as follows in the present embodiment
It carries out:
It (1) is 1cm × 1cm by area, resistivity is 50 Ω/cm, is placed on matter with a thickness of 600 μm of n-type lightly doped silicon wafer
It is etched 5 minutes in the hydrofluoric acid solution that amount concentration is 5%, the natural oxidizing layer on n-type lightly doped silicon wafer surface is removed, after taking-up
Successively respectively it is cleaned by ultrasonic 10 minutes with acetone, alcohol, deionized water, and with being dried with nitrogen, obtains n-type silicon base.
(2) the 1/2 of n-type silicon base 2 is covered with mask, using magnetron sputtering coating method, with purity for 99.9%
Aluminium oxide target be material, vacuum degree be 4 × 10-3Pa is not masked the part plating 60nm oxidation of version covering in n-type silicon base
Aluminium is as insulating layer；
(3) electron beam film plating process is used, is 6.7 × 10 in vacuum degree-3Pa is hereinafter, vapor deposition area is less than on the insulating layer
Insulating layer area contacts electrode as two selenizing palladiums with a thickness of the Pd electrode of 250nm；
(4) the two selenizing palladium membranes that area is less than n-type silicon area of base, two selenium are laid on two selenizing palladiums contact electrode
Change palladium membranes a part to contact with two selenizing palladiums contact electrode, remainder and n-type silicon upper surface of substrate do not cover insulating layer
Part contacts.
(5) electron beam film plating process is used, is 6.7 × 10 in vacuum degree-3Pa is hereinafter, being completed (2), (3), (4) three
The Ag electrode that the lower surface of the n-type silicon base 2 of step prepares with a thickness of 80nm, as n-type silicon basal electrode 1.
Two above-mentioned selenizing palladium membranes 5 are prepared by hot assist conversion method, the specific steps are as follows:
A. electron beam film plating process is used, is 6.7 × 10 in vacuum degree-3Pa in clean oxidation silicon base hereinafter, steam
Plate the palladium membranes with a thickness of 10nm.
B., the oxidation silicon base of surface covering palladium membranes is put into the right warm area of double temperature-area tubular furnaces, 0.2g purity will be filled
The left warm area of double temperature-area tubular furnaces is put into for the porcelain boat of 99.99% selenium powder；Being passed through the argon gas that flow is 50sccm is protection gas
Body, by left temperature-raising region temperature raising to 220 DEG C, by right temperature-raising region temperature raising to 450 DEG C, keeping pressure in tube furnace is 260Pa；Remain above-mentioned anti-
After answering condition 1h, the heating system of double temperature-area tubular furnaces is closed, continues to be passed through the argon gas protective gas that flow is 50sccm, etc.
Porcelain boat and oxidation silicon base are taken out when double temperature-area tubular furnaces are cooled to room temperature, oxidation silicon substrate surface growth there are two selenizing palladiums thin
Film, two selenizing palladium membranes are with a thickness of 35nm.
C. on surface, growth has the upper surface of the oxidation silicon base of two selenizing palladium membranes dense with revolving speed 3000rpm spin quality
Then oxidation silicon base is put into NaOH solution by the PMMA that degree is 5%, shell completely with oxidation silicon base to two selenizing palladium membranes
From later, two selenizing palladium membranes are transferred in deionized water and are cleaned, obtains two selenizing palladium membranes.
Two selenizing palladium membranes/n-type silicon heterojunction photoelectric detector prepared by the present embodiment is under dark and wavelength is
850nm, intensity 12.3mW/cm2Illumination under current-voltage characteristic curve as shown in figure 4, detecting utensil as seen from the figure
There is apparent photoelectric response characteristic.
Two selenizing palladium membranes/n-type silicon heterojunction photoelectric detector is under zero operating voltage prepared by the present embodiment, wave
A length of 850nm, intensity 12.3mW/cm2Illumination under time response curve as shown in figure 5, as can be seen from the figure detecting
Device is very sensitive to detected light, and current on/off ratio reaches 6 × 105, and there is ultrafast response speed.Furthermore two selenium prepared
Change palladium membranes/n-type silicon heterojunction photoelectric detector can work normally under zero operating voltage, can effectively reduce device power consumption.
The above is only exemplary embodiment of the present invention, are not intended to limit the invention, all in spirit of the invention
With any modifications, equivalent replacements, and improvements made within principle etc., should all be included in the protection scope of the present invention.
Claims (7)
1. two selenizing palladium membranes/n-type silicon heterojunction photoelectric detector, it is characterised in that: using n-type silicon base (2) described in
N-type silicon basal electrode (1) is arranged in the lower surface of the n-type silicon base (2) in the base area of photodetector；In the n-type
The upper surface of silicon base (2) covers insulating layer (3), and the area of the insulating layer (3) is the 1/ of n-type silicon base (2) area
5 to 4/5, the boundary of the boundary of the insulating layer (3) without departing from the n-type silicon base (2)；It is covered on the insulating layer (3)
Two selenizing palladiums contact electrode (4), and the two selenizings palladium contacts the boundary of the boundary without departing from the insulating layer (3) of electrode (4)；?
Two selenizing palladium membranes (5), described two selenizings palladium membranes (5) a part and two selenium are laid on two selenizings palladium contact electrode (4)
Change palladium contact electrode (4) contact, remainder is contacted with the part that n-type silicon base (2) upper surface does not cover insulating layer (3), institute
State boundary of the boundary without departing from the n-type silicon base (2) of two selenizing palladium membranes (5)；The two selenizings palladium membranes (5) and two
It is Ohmic contact that selenizing palladium, which contacts electrode (4), and the two selenizings palladium membranes (5) and n-type silicon base (2) form hetero-junctions.
2. two selenizings palladium membranes/n-type silicon heterojunction photoelectric detector according to claim 1, it is characterised in that: described
Insulating layer (3) using silica, silicon nitride, aluminium oxide or hafnium oxide as material, the insulating layer (3) with a thickness of 30-
300nm。
3. two selenizings palladium membranes/n-type silicon heterojunction photoelectric detector according to claim 1, it is characterised in that: described
N-type silicon basal electrode (1) be In-Ga alloy electrode or Ag electrode, the n-type silicon basal electrode (1) with a thickness of 30-
500nm。
4. two selenizings palladium membranes/n-type silicon heterojunction photoelectric detector according to claim 1, it is characterised in that: described
It is Au electrode, Pt electrode or Pd electrode that two selenizing palladiums, which contact electrode (4), two selenizings palladium contact electrode (4) with a thickness of 30-
300nm。
5. two selenizings palladium membranes/n-type silicon heterojunction photoelectric detector according to claim 1, it is characterised in that: the n
Type silicon base (2) adopts the n-type lightly doped silicon wafer that resistance rate is 0.1-100 Ω/cm.
6. two selenizings palladium membranes/n-type silicon heterojunction photoelectric detector according to claim 1, it is characterised in that: described
Two selenizing palladium membranes (5) with a thickness of 2-40nm.
7. two selenizing palladium membranes/n-type silicon heterojunction photoelectric detector system described in a kind of any one of claim 1~6
Preparation Method, which is characterized in that carry out as follows:
(1) n-type lightly doped silicon wafer is placed in the hydrofluoric acid solution or BOE etching liquid that mass concentration is 5%-10% and is etched
5-10 minutes, the natural oxidizing layer on n-type lightly doped silicon wafer surface is removed, is washed and dried after taking-up, obtains n-type silicon substrate
Bottom；
(2) use magnetron sputtering coating method in the upper surface area coverage of the n-type silicon base for the n-type silicon basal surface
The insulating layer of long-pending 1/5 to 4/5；
(3) two selenizing palladiums contact electrode, the two selenizings palladium contact are covered on the insulating layer using electron beam film plating process
Boundary of the boundary of electrode without departing from the insulating layer；
(4) two selenizing palladium membranes, described two selenizings palladium membranes a part and two selenium are laid on two selenizings palladium contact electrode
Change palladium contact electrode contact, remainder is contacted with the part that n-type silicon upper surface of substrate does not cover insulating layer, two selenizing
Boundary of the boundary of palladium membranes without departing from the n-type silicon base；
(5) n-type silicon basal electrode is arranged in the lower surface of the n-type silicon base using smearing or electron beam film plating process, i.e.,
Obtain two selenizing palladium membranes/n-type silicon heterojunction photoelectric detector.
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