CN109384728A - Fluoxastrobin channel solvates and preparation method thereof - Google Patents
Fluoxastrobin channel solvates and preparation method thereof Download PDFInfo
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- CN109384728A CN109384728A CN201710667153.5A CN201710667153A CN109384728A CN 109384728 A CN109384728 A CN 109384728A CN 201710667153 A CN201710667153 A CN 201710667153A CN 109384728 A CN109384728 A CN 109384728A
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- 239000012453 solvate Substances 0.000 title claims abstract description 43
- 239000005784 Fluoxastrobin Substances 0.000 title abstract description 86
- UFEODZBUAFNAEU-NLRVBDNBSA-N fluoxastrobin Chemical compound C=1C=CC=C(OC=2C(=C(OC=3C(=CC=CC=3)Cl)N=CN=2)F)C=1C(=N/OC)\C1=NOCCO1 UFEODZBUAFNAEU-NLRVBDNBSA-N 0.000 title abstract description 86
- 238000002360 preparation method Methods 0.000 title abstract description 29
- 239000013078 crystal Substances 0.000 claims description 508
- 238000000634 powder X-ray diffraction Methods 0.000 claims description 115
- 238000000034 method Methods 0.000 claims description 62
- 150000001875 compounds Chemical class 0.000 claims description 50
- 238000005352 clarification Methods 0.000 claims description 36
- 238000002425 crystallisation Methods 0.000 claims description 28
- 230000008025 crystallization Effects 0.000 claims description 28
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 22
- 201000010099 disease Diseases 0.000 claims description 18
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 12
- 239000000575 pesticide Substances 0.000 claims description 12
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 10
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 6
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 claims description 6
- 238000010413 gardening Methods 0.000 claims description 5
- 244000005700 microbiome Species 0.000 claims description 4
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical class ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 claims description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 3
- JWUJQDFVADABEY-UHFFFAOYSA-N 2-methyltetrahydrofuran Chemical compound CC1CCCO1 JWUJQDFVADABEY-UHFFFAOYSA-N 0.000 claims description 3
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 claims description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 3
- 230000002401 inhibitory effect Effects 0.000 claims description 3
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 3
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 claims description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims 2
- ZFNYKZIQYSIJMK-UHFFFAOYSA-N C(#N)C1=CC=CC=C1.[O] Chemical compound C(#N)C1=CC=CC=C1.[O] ZFNYKZIQYSIJMK-UHFFFAOYSA-N 0.000 abstract description 3
- 125000001820 oxy group Chemical group [*:1]O[*:2] 0.000 abstract description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 abstract 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 54
- 239000000243 solution Substances 0.000 description 47
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 45
- 238000002411 thermogravimetry Methods 0.000 description 38
- 238000000354 decomposition reaction Methods 0.000 description 24
- 238000012360 testing method Methods 0.000 description 15
- 239000002994 raw material Substances 0.000 description 13
- 239000007787 solid Substances 0.000 description 13
- 238000001228 spectrum Methods 0.000 description 13
- 238000002441 X-ray diffraction Methods 0.000 description 12
- 239000003795 chemical substances by application Substances 0.000 description 12
- 230000004927 fusion Effects 0.000 description 12
- 238000004467 single crystal X-ray diffraction Methods 0.000 description 12
- 241000233866 Fungi Species 0.000 description 11
- 238000001291 vacuum drying Methods 0.000 description 10
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 9
- 239000002904 solvent Substances 0.000 description 7
- 238000004704 ultra performance liquid chromatography Methods 0.000 description 7
- 241000221785 Erysiphales Species 0.000 description 5
- 241000233654 Oomycetes Species 0.000 description 5
- 241000233679 Peronosporaceae Species 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 5
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 5
- 241000221198 Basidiomycota Species 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 210000004027 cell Anatomy 0.000 description 4
- 230000003449 preventive effect Effects 0.000 description 4
- 241000894006 Bacteria Species 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 239000003814 drug Substances 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- -1 β methoxy acrylic acid lipid Chemical class 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000012296 anti-solvent Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002538 fungal effect Effects 0.000 description 2
- 230000000855 fungicidal effect Effects 0.000 description 2
- 239000000417 fungicide Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002609 medium Substances 0.000 description 2
- 210000003470 mitochondria Anatomy 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000029058 respiratory gaseous exchange Effects 0.000 description 2
- 241000235349 Ascomycota Species 0.000 description 1
- 229910017488 Cu K Inorganic materials 0.000 description 1
- 229910017541 Cu-K Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000000825 pharmaceutical preparation Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000012429 reaction media Substances 0.000 description 1
- 239000013558 reference substance Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000012224 working solution Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D239/00—Heterocyclic compounds containing 1,3-diazine or hydrogenated 1,3-diazine rings
- C07D239/02—Heterocyclic compounds containing 1,3-diazine or hydrogenated 1,3-diazine rings not condensed with other rings
- C07D239/24—Heterocyclic compounds containing 1,3-diazine or hydrogenated 1,3-diazine rings not condensed with other rings having three or more double bonds between ring members or between ring members and non-ring members
- C07D239/28—Heterocyclic compounds containing 1,3-diazine or hydrogenated 1,3-diazine rings not condensed with other rings having three or more double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, directly attached to ring carbon atoms
- C07D239/46—Two or more oxygen, sulphur or nitrogen atoms
- C07D239/52—Two oxygen atoms
-
- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01N—PRESERVATION OF BODIES OF HUMANS OR ANIMALS OR PLANTS OR PARTS THEREOF; BIOCIDES, e.g. AS DISINFECTANTS, AS PESTICIDES OR AS HERBICIDES; PEST REPELLANTS OR ATTRACTANTS; PLANT GROWTH REGULATORS
- A01N43/00—Biocides, pest repellants or attractants, or plant growth regulators containing heterocyclic compounds
- A01N43/48—Biocides, pest repellants or attractants, or plant growth regulators containing heterocyclic compounds having rings with two nitrogen atoms as the only ring hetero atoms
- A01N43/54—1,3-Diazines; Hydrogenated 1,3-diazines
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07B—GENERAL METHODS OF ORGANIC CHEMISTRY; APPARATUS THEREFOR
- C07B2200/00—Indexing scheme relating to specific properties of organic compounds
- C07B2200/13—Crystalline forms, e.g. polymorphs
Abstract
The present invention provides Fluoxastrobin channel solvates and preparation method thereof.In particular it relates to the channel solvates, preparation method and purposes of (E) -2- { 2- [6- (2- cyano-benzene oxygen) pyrimidine-4-yl oxygroup] phenyl } -3- methoxy-methyl acrylate.
Description
Technical field
The invention belongs to field of pesticide chemistry, specifically, the present invention relates to Fluoxastrobin channel solvates, its application
And preparation method.
Background technique
Fluoxastrobin (compound of formula I), entitled (E) -2- { 2- [6- (2- cyano-benzene oxygen) pyrimidine-4-yl oxygroup] benzene of chemistry
Base } -3- methoxy-methyl acrylate.The compound is a kind of completely new β methoxy acrylic acid lipid fungicide, is able to suppress disease
Fungal mitochondria breathing destroys the energy synthesis of germ, has protection, treats and root out triple function.To sac fungus, load
The major part disease such as downy mildew, powdery mildew, anthracnose, leaf spot caused by four major class disease fungi of bacterium, Fungi Imperfecti and Oomycete
There is good preventive effect.
Same compound, crystal form are different, and solubility may also can have difference, in addition its stability, mobility, can
Compressibility, bioavilability may also can be different.And these physicochemical properties can generate certain influence to the application of the compound.
According to the preparation method in original chemical patent CN101522639A, the crystal form prepared is named as crystal form A, crystal form A
There is a situation where that solubility is low, unstable.
Therefore, this field needs other crystal forms of research and development compound of formula I, it is desirable that preparation method is simple, light and heat stability,
Hygroscopicity is low, dissolubility is high, is produced on a large scale.
Summary of the invention
The purpose of the present invention is to provide polymorphics of a kind of Fluoxastrobin and preparation method thereof.
The first aspect of the present invention provides a kind of solvate of compound of formula I,
In another preferred example, the solvate is selected from the group: crystal form B, crystal form C, crystal form D, crystal form E, crystal form F, crystalline substance
Type G, crystal form H, crystal form I, crystal form J, crystal form K, crystal form L, crystal form M.
In another preferred example, the X-ray powder diffraction pattern of the crystal form B includes 3 or 3 or more selected from the group below
2 θ values: 7.6 ± 0.2 °, 8.6 ± 0.2 °, 14.4 ± 0.2 °, 16.9 ± 0.2 °, 18.2 ± 0.2 °, 18.8 ± 0.2 °, 20.5 ±
0.2°、21.3±0.2°、22.4±0.2°、22.8±0.2°、24.2±0.2°、26.1±0.2°、26.7±0.2°、28.7±
0.2°、30.4±0.2°、30.9±0.2°、36.0±0.2°、38.2±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form B includes 5 or 5 or more selected from the group below
2 θ values: 7.6 ± 0.2 °, 8.6 ± 0.2 °, 14.4 ± 0.2 °, 16.9 ± 0.2 °, 18.2 ± 0.2 °, 18.8 ± 0.2 °, 20.5 ±
0.2°、21.3±0.2°、22.4±0.2°、22.8±0.2°、24.2±0.2°、26.1±0.2°、26.7±0.2°、28.7±
0.2°、30.4±0.2°、30.9±0.2°、36.0±0.2°、38.2±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form B is selected from the group including 10 or 10 or more
2 θ values: 7.6 ± 0.2 °, 8.6 ± 0.2 °, 14.4 ± 0.2 °, 16.9 ± 0.2 °, 18.2 ± 0.2 °, 18.8 ± 0.2 °, 20.5 ±
0.2°、21.3±0.2°、22.4±0.2°、22.8±0.2°、24.2±0.2°、26.1±0.2°、26.7±0.2°、28.7±
0.2°、30.4±0.2°、30.9±0.2°、36.0±0.2°、38.2±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form B can further comprise 1 or 1 or more and select
From 2 θ values of the following group: 11.0 ± 0.2 °, 12.1 ± 0.2 °, 13.8 ± 0.2 °, 15.1 ± 0.2 °, 25.1 ± 0.2 °, 25.7 ±
0.2°、27.4±0.2°、32.4±0.2°、33.8±0.2°、36.7±0.2°、40.8±0.2°、43.4±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form B is basic as Fig. 1 is characterized.
In another preferred example, the TGA figure of the crystal form B is basic as Fig. 3 is characterized.
In another preferred example, the DSC figure of the crystal form B has heat absorption within the scope of 62~88 DEG C and 100~125 DEG C
Peak.
In another preferred example, the DSC figure of the crystal form B is basic as Fig. 2 is characterized.
In another preferred example, the crystal form B purity is greater than 95%.
In another preferred example, the X-ray powder diffraction pattern of the crystal form C includes 3 or 3 or more selected from the group below
2 θ values: 7.0 ± 0.2 °, 7.3 ± 0.2 °, 7.6 ± 0.2 °, 8.5 ± 0.2 °, 12.1 ± 0.2 °, 13.9 ± 0.2 °, 14.7 ±
0.2°、17.0±0.2°、18.1±0.2°、18.9±0.2°、20.7±0.2°、21.5±0.2°、22.6±0.2°、22.8±
0.2°、24.5±0.2°、25.8±0.2°、26.3±0.2°、26.8±0.2°、27.7±0.2°、28.7±0.2°、29.0±
0.2°、30.6±0.2°、30.8±0.2°、31.2±0.2°、35.0±0.2°、36.2±0.2°、38.5±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form C includes 5 or 5 or more selected from the group below
2 θ values: 7.0 ± 0.2 °, 7.3 ± 0.2 °, 7.6 ± 0.2 °, 8.5 ± 0.2 °, 12.1 ± 0.2 °, 13.9 ± 0.2 °, 14.7 ±
0.2°、17.0±0.2°、18.1±0.2°、18.9±0.2°、20.7±0.2°、21.5±0.2°、22.6±0.2°、22.8±
0.2°、24.5±0.2°、25.8±0.2°、26.3±0.2°、26.8±0.2°、27.7±0.2°、28.7±0.2°、29.0±
0.2°、30.6±0.2°、30.8±0.2°、31.2±0.2°、35.0±0.2°、36.2±0.2°、38.5±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form C is selected from the group including 10 or 10 or more
2 θ values: 7.0 ± 0.2 °, 7.3 ± 0.2 °, 7.6 ± 0.2 °, 8.5 ± 0.2 °, 12.1 ± 0.2 °, 13.9 ± 0.2 °, 14.7 ±
0.2°、17.0±0.2°、18.1±0.2°、18.9±0.2°、20.7±0.2°、21.5±0.2°、22.6±0.2°、22.8±
0.2°、24.5±0.2°、25.8±0.2°、26.3±0.2°、26.8±0.2°、27.7±0.2°、28.7±0.2°、29.0±
0.2°、30.6±0.2°、30.8±0.2°、31.2±0.2°、35.0±0.2°、36.2±0.2°、38.5±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form C can further comprise 1 or 1 or more and select
From 2 θ values of the following group: 15.5 ± 0.2 °, 23.5 ± 0.2 °, 25.1 ± 0.2 °, 28.1 ± 0.2 °, 31.5 ± 0.2 °, 32.6 ±
0.2°、33.5±0.2°、33.9±0.2°、37.2±0.2°、40.0±0.2°、40.5±0.2°、41.6±0.2°、42.1±
0.2°、42.8±0.2°、43.8±0.2°、44.5±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form C is basic as Fig. 6 is characterized.
In another preferred example, the TGA figure of the crystal form C is basic as Fig. 8 is characterized.
In another preferred example, the DSC figure of the crystal form C has endothermic peak within the scope of 86~103 DEG C.
In another preferred example, the DSC figure of the crystal form C is basic as Fig. 7 is characterized.
In another preferred example, the crystal form C purity is greater than 95%.
In another preferred example, the X-ray powder diffraction pattern of the crystal form D includes 3 or 3 or more selected from the group below
2 θ values: 7.6 ± 0.2 °, 8.5 ± 0.2 °, 13.5 ± 0.2 °, 14.4 ± 0.2 °, 16.5 ± 0.2 °, 17.0 ± 0.2 °, 18.2 ±
0.2°、18.7±0.2°、20.6±0.2°、21.0±0.2°、21.3±0.2°、22.4±0.2°、23.6±0.2°、24.1±
0.2°、25.9±0.2°、26.5±0.2°、28.2±0.2°、28.6±0.2°、28.9±0.2°、30.4±0.2°、30.8±
0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form D includes 5 or 5 or more selected from the group below
2 θ values: 7.6 ± 0.2 °, 8.5 ± 0.2 °, 13.5 ± 0.2 °, 14.4 ± 0.2 °, 16.5 ± 0.2 °, 17.0 ± 0.2 °, 18.2 ±
0.2°、18.7±0.2°、20.6±0.2°、21.0±0.2°、21.3±0.2°、22.4±0.2°、23.6±0.2°、24.1±
0.2°、25.9±0.2°、26.5±0.2°、28.2±0.2°、28.6±0.2°、28.9±0.2°、30.4±0.2°、30.8±
0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form D is selected from the group including 10 or 10 or more
2 θ values: 7.6 ± 0.2 °, 8.5 ± 0.2 °, 13.5 ± 0.2 °, 14.4 ± 0.2 °, 16.5 ± 0.2 °, 17.0 ± 0.2 °, 18.2 ±
0.2°、18.7±0.2°、20.6±0.2°、21.0±0.2°、21.3±0.2°、22.4±0.2°、23.6±0.2°、24.1±
0.2°、25.9±0.2°、26.5±0.2°、28.2±0.2°、28.6±0.2°、28.9±0.2°、30.4±0.2°、30.8±
0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form D can further comprise 1 or 1 or more and select
From 2 θ values of the following group: 11.9 ± 0.2 °, 15.6 ± 0.2 °, 21.8 ± 0.2 °, 24.5 ± 0.2 °, 25.1 ± 0.2 °, 27.4 ±
0.2°、31.2±0.2°、32.7±0.2°、34.3±0.2°、34.8±0.2°、35.8±0.2°、36.4±0.2°、37.2±
0.2°、38.0±0.2°、40.9±0.2°、41.5±0.2°、43.0±0.2°、43.7±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form D is basic as Figure 13 is characterized.
In another preferred example, the TGA figure of the crystal form D is basic as Figure 15 is characterized.
In another preferred example, the DSC figure of the crystal form D has heat absorption within the scope of 57~87 DEG C and 105~144 DEG C
Peak.
In another preferred example, the DSC figure of the crystal form D is basic as Figure 14 is characterized.
In another preferred example, the crystal form D purity is greater than 95%.
In another preferred example, the X-ray powder diffraction pattern of the crystal form E includes 3 or 3 or more selected from the group below
2 θ values: 7.5 ± 0.2 °, 8.6 ± 0.2 °, 13.4 ± 0.2 °, 14.4 ± 0.2 °, 14.7 ± 0.2 °, 15.6 ± 0.2 °, 16.5 ±
0.2°、18.2±0.2°、19.1±0.2°、20.6±0.2°、21.3±0.2°、22.8±0.2°、24.0±0.2°、24.5±
0.2°、25.3±0.2°、25.8±0.2°、26.6±0.2°、28.6±0.2°、30.2±0.2°、31.3±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form E includes 5 or 5 or more selected from the group below
2 θ values: 7.5 ± 0.2 °, 8.6 ± 0.2 °, 13.4 ± 0.2 °, 14.4 ± 0.2 °, 14.7 ± 0.2 °, 15.6 ± 0.2 °, 16.5 ±
0.2°、18.2±0.2°、19.1±0.2°、20.6±0.2°、21.3±0.2°、22.8±0.2°、24.0±0.2°、24.5±
0.2°、25.3±0.2°、25.8±0.2°、26.6±0.2°、28.6±0.2°、30.2±0.2°、31.3±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form E is selected from the group including 10 or 10 or more
2 θ values: 7.5 ± 0.2 °, 8.6 ± 0.2 °, 13.4 ± 0.2 °, 14.4 ± 0.2 °, 14.7 ± 0.2 °, 15.6 ± 0.2 °, 16.5 ±
0.2°、18.2±0.2°、19.1±0.2°、20.6±0.2°、21.3±0.2°、22.8±0.2°、24.0±0.2°、24.5±
0.2°、25.3±0.2°、25.8±0.2°、26.6±0.2°、28.6±0.2°、30.2±0.2°、31.3±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form E can further comprise 1 or 1 or more and select
From 2 θ values of the following group: 11.9 ± 0.2 °, 17.1 ± 0.2 °, 21.8 ± 0.2 °, 27.4 ± 0.2 °, 32.6 ± 0.2 °, 33.4 ±
0.2°、34.2±0.2°、34.6±0.2°、36.4±0.2°、37.3±0.2°、37.8±0.2°、40.2±0.2°、41.0±
0.2°、41.5±0.2°、41.9±0.2°、42.4±0.2°、43.1±0.2°、43.7±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form E is basic as Figure 18 is characterized.
In another preferred example, the TGA figure of the crystal form E is basic as Figure 20 is characterized.
In another preferred example, the DSC figure of the crystal form E has within the scope of 77~100 DEG C and 106~123 DEG C and inhales
Thermal spike.
In another preferred example, the DSC figure of the crystal form E is basic as Figure 19 is characterized.
In another preferred example, the crystal form E purity is greater than 95%.
In another preferred example, the X-ray powder diffraction pattern of the crystal form F includes 3 or 3 or more selected from the group below
2 θ values: 7.1 ± 0.2 °, 8.5 ± 0.2 °, 13.7 ± 0.2 °, 14.5 ± 0.2 °, 16.9 ± 0.2 °, 17.5 ± 0.2 °, 20.1 ±
0.2°、20.6±0.2°、21.2±0.2°、21.7±0.2°、23.2±0.2°、23.6±0.2°、24.6±0.2°、25.1±
0.2°、25.8±0.2°、26.9±0.2°、29.1±0.2°、31.4±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form F includes 5 or 5 or more selected from the group below
2 θ values: 7.1 ± 0.2 °, 8.5 ± 0.2 °, 13.7 ± 0.2 °, 14.5 ± 0.2 °, 16.9 ± 0.2 °, 17.5 ± 0.2 °, 20.1 ±
0.2°、20.6±0.2°、21.2±0.2°、21.7±0.2°、23.2±0.2°、23.6±0.2°、24.6±0.2°、25.1±
0.2°、25.8±0.2°、26.9±0.2°、29.1±0.2°、31.4±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form F is selected from the group including 10 or 10 or more
2 θ values: 7.1 ± 0.2 °, 8.5 ± 0.2 °, 13.7 ± 0.2 °, 14.5 ± 0.2 °, 16.9 ± 0.2 °, 17.5 ± 0.2 °, 20.1 ±
0.2°、20.6±0.2°、21.2±0.2°、21.7±0.2°、23.2±0.2°、23.6±0.2°、24.6±0.2°、25.1±
0.2°、25.8±0.2°、26.9±0.2°、29.1±0.2°、31.4±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form F can further comprise 1 or 1 or more and select
From 2 θ values of the following group: 10.9 ± 0.2 °, 11.8 ± 0.2 °, 12.7 ± 0.2 °, 13.3 ± 0.2 °, 15.6 ± 0.2 °, 16.1 ±
0.2°、18.4±0.2°、18.7±0.2°、27.5±0.2°、28.3±0.2°、29.6±0.2°、30.7±0.2°、32.3±
0.2°、33.7±0.2°、33.9±0.2°、35.0±0.2°、35.5±0.2°、36.5±0.2°、36.8±0.2°、38.2±
0.2°、40.5±0.2°、41.3±0.2°、43.2±0.2°、43.7±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form F is basic as Figure 23 is characterized.
In another preferred example, the TGA figure of the crystal form F is basic as Figure 25 is characterized.
In another preferred example, the DSC figure of the crystal form F has endothermic peak within the scope of 106~129 DEG C.
In another preferred example, the DSC figure of the crystal form F is basic as Figure 24 is characterized.
In another preferred example, the crystal form F purity is greater than 95%.
In another preferred example, the X-ray powder diffraction pattern of the crystal form G includes 3 or 3 or more selected from the group below
2 θ values: 7.5 ± 0.2 °, 8.5 ± 0.2 °, 13.9 ± 0.2 °, 14.3 ± 0.2 °, 14.6 ± 0.2 °, 16.8 ± 0.2 °, 18.1 ±
0.2°、18.9±0.2°、20.6±0.2°、21.2±0.2°、21.4±0.2°、22.4±0.2°、22.8±0.2°、24.3±
0.2°、24.6±0.2°、26.2±0.2°、26.7±0.2°、28.7±0.2°、30.3±0.2°、30.5±0.2°、30.7±
0.2°、31.0±0.2°、31.2±0.2°、36.0±0.2°、38.4±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form G includes 5 or 5 or more selected from the group below
2 θ values: 7.5 ± 0.2 °, 8.5 ± 0.2 °, 13.9 ± 0.2 °, 14.3 ± 0.2 °, 14.6 ± 0.2 °, 16.8 ± 0.2 °, 18.1 ±
0.2°、18.9±0.2°、20.6±0.2°、21.2±0.2°、21.4±0.2°、22.4±0.2°、22.8±0.2°、24.3±
0.2°、24.6±0.2°、26.2±0.2°、26.7±0.2°、28.7±0.2°、30.3±0.2°、30.5±0.2°、30.7±
0.2°、31.0±0.2°、31.2±0.2°、36.0±0.2°、38.4±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form G is selected from the group including 10 or 10 or more
2 θ values: 7.5 ± 0.2 °, 8.5 ± 0.2 °, 13.9 ± 0.2 °, 14.3 ± 0.2 °, 14.6 ± 0.2 °, 16.8 ± 0.2 °, 18.1 ±
0.2°、18.9±0.2°、20.6±0.2°、21.2±0.2°、21.4±0.2°、22.4±0.2°、22.8±0.2°、24.3±
0.2°、24.6±0.2°、26.2±0.2°、26.7±0.2°、28.7±0.2°、30.3±0.2°、30.5±0.2°、30.7±
0.2°、31.0±0.2°、31.2±0.2°、36.0±0.2°、38.4±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form G can further comprise 1 or 1 or more and select
From 2 θ values of the following group: 6.7 ± 0.2 °, 12.1 ± 0.2 °, 13.2 ± 0.2 °, 15.6 ± 0.2 °, 23.6 ± 0.2 °, 25.5 ±
0.2°、27.3±0.2°、27.9±0.2°、29.5±0.2°、31.5±0.2°、32.5±0.2°、32.9±0.2°、33.9±
0.2°、34.3±0.2°、35.0±0.2°、37.1±0.2°、37.7±0.2°、40.5±0.2°、41.4±0.2°、43.2±
0.2°、43.5±0.2°、44.5±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form G is basic as Figure 26 is characterized.
In another preferred example, the TGA figure of the crystal form G is basic as Figure 28 is characterized.
In another preferred example, the DSC figure of the crystal form G has endothermic peak within the scope of 83~104 DEG C.
In another preferred example, the DSC figure of the crystal form G is basic as Figure 27 is characterized.
In another preferred example, the crystal form G purity is greater than 95%.
In another preferred example, the X-ray powder diffraction pattern of the crystal form H includes 3 or 3 or more selected from the group below
2 θ values: 7.5 ± 0.2 °, 8.7 ± 0.2 °, 13.5 ± 0.2 °, 14.2 ± 0.2 °, 14.5 ± 0.2 °, 15.6 ± 0.2 °, 18.0 ±
0.2°、19.2±0.2°、20.6±0.2°、21.4±0.2°、22.5±0.2°、23.7±0.2°、24.1±0.2°、25.1±
0.2°、25.5±0.2°、26.3±0.2°、26.8±0.2°、28.3±0.2°、28.5±0.2°、30.0±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form H includes 5 or 5 or more selected from the group below
2 θ values: 7.5 ± 0.2 °, 8.7 ± 0.2 °, 13.5 ± 0.2 °, 14.2 ± 0.2 °, 14.5 ± 0.2 °, 15.6 ± 0.2 °, 18.0 ±
0.2°、19.2±0.2°、20.6±0.2°、21.4±0.2°、22.5±0.2°、23.7±0.2°、24.1±0.2°、25.1±
0.2°、25.5±0.2°、26.3±0.2°、26.8±0.2°、28.3±0.2°、28.5±0.2°、30.0±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form H is selected from the group including 10 or 10 or more
2 θ values: 7.5 ± 0.2 °, 8.7 ± 0.2 °, 13.5 ± 0.2 °, 14.2 ± 0.2 °, 14.5 ± 0.2 °, 15.6 ± 0.2 °, 18.0 ±
0.2°、19.2±0.2°、20.6±0.2°、21.4±0.2°、22.5±0.2°、23.7±0.2°、24.1±0.2°、25.1±
0.2°、25.5±0.2°、26.3±0.2°、26.8±0.2°、28.3±0.2°、28.5±0.2°、30.0±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form H can further comprise 1 or 1 or more and select
From 2 θ values of the following group: 11.9 ± 0.2 °, 16.3 ± 0.2 °, 17.3 ± 0.2 °, 27.5 ± 0.2 °, 29.1 ± 0.2 °, 30.7 ±
0.2°、31.2±0.2°、32.0±0.2°、32.9±0.2°、33.3±0.2°、33.8±0.2°、34.7±0.2°、36.0±
0.2°、36.4±0.2°、37.1±0.2°、37.7±0.2°、38.1±0.2°、40.7±0.2°、41.2±0.2°、41.9±
0.2°、43.3±0.2°、43.9±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form H is basic as Figure 29 is characterized.
In another preferred example, the TGA figure of the crystal form H is basic as Figure 31 is characterized.
In another preferred example, the DSC figure of the crystal form H has heat absorption within the scope of 62~81 DEG C and 83~122 DEG C
Peak.
In another preferred example, the DSC figure of the crystal form H is basic as Figure 30 is characterized.
In another preferred example, the crystal form H purity is greater than 95%.
In another preferred example, the X-ray powder diffraction pattern of the crystal form I includes 3 or 3 or more selected from the group below
2 θ values: 7.5 ± 0.2 °, 8.5 ± 0.2 °, 11.0 ± 0.2 °, 13.8 ± 0.2 °, 14.4 ± 0.2 °, 15.9 ± 0.2 °, 16.5 ±
0.2°、17.5±0.2°、19.0±0.2°、20.6±0.2°、21.4±0.2°、22.0±0.2°、22.5±0.2°、22.8±
0.2°、23.9±0.2°、24.4±0.2°、24.9±0.2°、26.3±0.2°、26.7±0.2°、28.4±0.2°、28.9±
0.2°、30.6±0.2°、36.2±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form I includes 5 or 5 or more selected from the group below
2 θ values: 7.5 ± 0.2 °, 8.5 ± 0.2 °, 11.0 ± 0.2 °, 13.8 ± 0.2 °, 14.4 ± 0.2 °, 15.9 ± 0.2 °, 16.5 ±
0.2°、17.5±0.2°、19.0±0.2°、20.6±0.2°、21.4±0.2°、22.0±0.2°、22.5±0.2°、22.8±
0.2°、23.9±0.2°、24.4±0.2°、24.9±0.2°、26.3±0.2°、26.7±0.2°、28.4±0.2°、28.9±
0.2°、30.6±0.2°、36.2±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form I is selected from the group including 10 or 10 or more
2 θ values: 7.5 ± 0.2 °, 8.5 ± 0.2 °, 11.0 ± 0.2 °, 13.8 ± 0.2 °, 14.4 ± 0.2 °, 15.9 ± 0.2 °, 16.5 ±
0.2°、17.5±0.2°、19.0±0.2°、20.6±0.2°、21.4±0.2°、22.0±0.2°、22.5±0.2°、22.8±
0.2°、23.9±0.2°、24.4±0.2°、24.9±0.2°、26.3±0.2°、26.7±0.2°、28.4±0.2°、28.9±
0.2°、30.6±0.2°、36.2±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form I can further comprise 1 or 1 or more and select
From 2 θ values of the following group: 6.2 ± 0.2 °, 15.1 ± 0.2 °, 17.1 ± 0.2 °, 18.3 ± 0.2 °, 23.3 ± 0.2 °, 25.4 ±
0.2°、27.2±0.2°、27.8±0.2°、29.5±0.2°、29.9±0.2°、31.2±0.2°、32.0±0.2°、33.7±
0.2°、34.4±0.2°、35.2±0.2°、36.6±0.2°、37.2±0.2°、38.0±0.2°、38.4±0.2°、38.9±
0.2°、39.7±0.2°、41.4±0.2°、43.5±0.2°、43.9±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form I is basic as Figure 32 is characterized.
In another preferred example, the TGA figure of the crystal form I is basic as Figure 34 is characterized.
In another preferred example, the DSC figure of the crystal form I has endothermic peak within the scope of 106~127 DEG C.
In another preferred example, the DSC figure of the crystal form I is basic as Figure 33 is characterized.
In another preferred example, the crystal form I purity is greater than 95%.
In another preferred example, the X-ray powder diffraction pattern of the crystal form J includes 3 or 3 or more selected from the group below
2 θ values: 7.6 ± 0.2 °, 8.8 ± 0.2 °, 14.4 ± 0.2 °, 17.4 ± 0.2 °, 18.2 ± 0.2 °, 20.6 ± 0.2 °, 21.5 ±
0.2°、22.5±0.2°、22.8±0.2°、26.2±0.2°、26.5±0.2°、28.8±0.2°、29.2±0.2°、30.1±
0.2°、36.2±0.2°、37.9±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form J includes 5 or 5 or more selected from the group below
2 θ values: 7.6 ± 0.2 °, 8.8 ± 0.2 °, 14.4 ± 0.2 °, 17.4 ± 0.2 °, 18.2 ± 0.2 °, 20.6 ± 0.2 °, 21.5 ±
0.2°、22.5±0.2°、22.8±0.2°、26.2±0.2°、26.5±0.2°、28.8±0.2°、29.2±0.2°、30.1±
0.2°、36.2±0.2°、37.9±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form J is selected from the group including 10 or 10 or more
2 θ values: 7.6 ± 0.2 °, 8.8 ± 0.2 °, 14.4 ± 0.2 °, 17.4 ± 0.2 °, 18.2 ± 0.2 °, 20.6 ± 0.2 °, 21.5 ±
0.2°、22.5±0.2°、22.8±0.2°、26.2±0.2°、26.5±0.2°、28.8±0.2°、29.2±0.2°、30.1±
0.2°、36.2±0.2°、37.9±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form J can further comprise 1 or 1 or more and select
From 2 θ values of the following group: 7.8 ± 0.2 °, 8.1 ± 0.2 °, 8.3 ± 0.2 °, 11.8 ± 0.2 °, 13.2 ± 0.2 °, 13.4 ± 0.2 °,
14.0±0.2°、15.0±0.2°、15.6±0.2°、16.2±0.2°、17.9±0.2°、18.4±0.2°、19.3±0.2°、
23.5±0.2°、23.8±0.2°、24.4±0.2°、24.9±0.2°、25.6±0.2°、26.8±0.2°、27.6±0.2°、
28.5±0.2°、30.5±0.2°、31.0±0.2°、31.4±0.2°、33.4±0.2°、33.6±0.2°、34.8±0.2°、
35.1±0.2°、36.9±0.2°、38.4±0.2°、40.7±0.2°、44.0±0.2°、44.2±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form J is basic as Figure 35 is characterized.
In another preferred example, the TGA figure of the crystal form J is basic as Figure 37 is characterized.
In another preferred example, the DSC figure of the crystal form J has endothermic peak within the scope of 110~133 DEG C.
In another preferred example, the DSC figure of the crystal form J is basic as Figure 36 is characterized.
In another preferred example, the crystal form J purity is greater than 95%.
In another preferred example, the X-ray powder diffraction pattern of the crystal form K includes 3 or 3 or more selected from the group below
2 θ values: 7.7 ± 0.2 °, 8.5 ± 0.2 °, 8.8 ± 0.2 °, 13.4 ± 0.2 °, 14.4 ± 0.2 °, 14.7 ± 0.2 °, 17.4 ±
0.2°、18.2±0.2°、18.6±0.2°、19.0±0.2°、20.7±0.2°、21.3±0.2°、21.6±0.2°、22.5±
0.2°、22.8±0.2°、24.0±0.2°、24.3±0.2°、26.0±0.2°、26.6±0.2°、28.6±0.2°、29.0±
0.2°、30.4±0.2°、36.1±0.2°、36.3±0.2°、37.9±0.2°、38.2±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form K includes 5 or 5 or more selected from the group below
2 θ values: 7.7 ± 0.2 °, 8.5 ± 0.2 °, 8.8 ± 0.2 °, 13.4 ± 0.2 °, 14.4 ± 0.2 °, 14.7 ± 0.2 °, 17.4 ±
0.2°、18.2±0.2°、18.6±0.2°、19.0±0.2°、20.7±0.2°、21.3±0.2°、21.6±0.2°、22.5±
0.2°、22.8±0.2°、24.0±0.2°、24.3±0.2°、26.0±0.2°、26.6±0.2°、28.6±0.2°、29.0±
0.2°、30.4±0.2°、36.1±0.2°、36.3±0.2°、37.9±0.2°、38.2±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form K is selected from the group including 10 or 10 or more
2 θ values: 7.7 ± 0.2 °, 8.5 ± 0.2 °, 8.8 ± 0.2 °, 13.4 ± 0.2 °, 14.4 ± 0.2 °, 14.7 ± 0.2 °, 17.4 ±
0.2°、18.2±0.2°、18.6±0.2°、19.0±0.2°、20.7±0.2°、21.3±0.2°、21.6±0.2°、22.5±
0.2°、22.8±0.2°、24.0±0.2°、24.3±0.2°、26.0±0.2°、26.6±0.2°、28.6±0.2°、29.0±
0.2°、30.4±0.2°、36.1±0.2°、36.3±0.2°、37.9±0.2°、38.2±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form K includes 1 or 1 or more selected from the group below
2 θ values: 7.0 ± 0.2 °, 11.1 ± 0.2 °, 15.4 ± 0.2 °, 16.1 ± 0.2 °, 16.8 ± 0.2 °, 18.0 ± 0.2 °, 24.5 ±
0.2°、25.4±0.2°、27.5±0.2°、28.1±0.2°、32.7±0.2°、33.3±0.2°、33.6±0.2°、41.4±
0.2°、44.3±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form K is basic as Figure 38 is characterized.
In another preferred example, the TGA figure of the crystal form K is basic as Figure 40 is characterized.
In another preferred example, the DSC figure of the crystal form K has heat absorption within the scope of 61~79 DEG C and 99~126 DEG C
Peak.
In another preferred example, the DSC figure of the crystal form K is basic as Figure 39 is characterized.
In another preferred example, the crystal form K purity is greater than 95%.
In another preferred example, the X-ray powder diffraction pattern of the crystal form L includes 3 or 3 or more selected from the group below
2 θ values: 7.5 ± 0.2 °, 8.5 ± 0.2 °, 14.0 ± 0.2 °, 14.4 ± 0.2 °, 14.6 ± 0.2 °, 17.1 ± 0.2 °, 18.2 ±
0.2°、19.0±0.2°、20.6±0.2°、21.4±0.2°、22.5±0.2°、22.8±0.2°、24.4±0.2°、26.3±
0.2°、26.8±0.2°、28.8±0.2°、30.5±0.2°、30.9±0.2°、31.2±0.2°、36.1±0.2°、38.4±
0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form L includes 5 or 5 or more selected from the group below
2 θ values: 7.5 ± 0.2 °, 8.5 ± 0.2 °, 14.0 ± 0.2 °, 14.4 ± 0.2 °, 14.6 ± 0.2 °, 17.1 ± 0.2 °, 18.2 ±
0.2°、19.0±0.2°、20.6±0.2°、21.4±0.2°、22.5±0.2°、22.8±0.2°、24.4±0.2°、26.3±
0.2°、26.8±0.2°、28.8±0.2°、30.5±0.2°、30.9±0.2°、31.2±0.2°、36.1±0.2°、38.4±
0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form L is selected from the group including 10 or 10 or more
2 θ values: 7.5 ± 0.2 °, 8.5 ± 0.2 °, 14.0 ± 0.2 °, 14.4 ± 0.2 °, 14.6 ± 0.2 °, 17.1 ± 0.2 °, 18.2 ±
0.2°、19.0±0.2°、20.6±0.2°、21.4±0.2°、22.5±0.2°、22.8±0.2°、24.4±0.2°、26.3±
0.2°、26.8±0.2°、28.8±0.2°、30.5±0.2°、30.9±0.2°、31.2±0.2°、36.1±0.2°、38.4±
0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form L can further comprise 1 or 1 or more and select
From 2 θ values of the following group: 12.1 ± 0.2 °, 13.3 ± 0.2 °, 15.1 ± 0.2 °, 15.7 ± 0.2 °, 16.5 ± 0.2 °, 23.6 ±
0.2°、24.7±0.2°、25.1±0.2°、25.7±0.2°、27.4±0.2°、28.1±0.2°、31.6±0.2°、32.6±
0.2°、33.0±0.2°、34.0±0.2°、37.1±0.2°、37.9±0.2°、39.0±0.2°、41.5±0.2°、43.2±
0.2°、43.6±0.2°、44.1±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form L is basic as Figure 41 is characterized.
In another preferred example, the TGA figure of the crystal form L is basic as Figure 43 is characterized.
In another preferred example, the DSC figure of the crystal form L has endothermic peak within the scope of 84~99 DEG C.
In another preferred example, the DSC figure of the crystal form L is basic as Figure 42 is characterized.
In another preferred example, the crystal form L purity is greater than 95%.
In another preferred example, the X-ray powder diffraction pattern of the crystal form M includes 3 or 3 or more selected from the group below
2 θ values: 7.7 ± 0.2 °, 8.7 ± 0.2 °, 11.1 ± 0.2 °, 13.5 ± 0.2 °, 14.0 ± 0.2 °, 14.5 ± 0.2 °, 17.7 ±
0.2°、18.4±0.2°、19.2±0.2°、20.6±0.2°、21.5±0.2°、22.1±0.2°、22.6±0.2°、23.0±
0.2°、24.4±0.2°、25.1±0.2°、26.4±0.2°、26.9±0.2°、29.0±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form M includes 5 or 5 or more selected from the group below
2 θ values: 7.7 ± 0.2 °, 8.7 ± 0.2 °, 11.1 ± 0.2 °, 13.5 ± 0.2 °, 14.0 ± 0.2 °, 14.5 ± 0.2 °, 17.7 ±
0.2°、18.4±0.2°、19.2±0.2°、20.6±0.2°、21.5±0.2°、22.1±0.2°、22.6±0.2°、23.0±
0.2°、24.4±0.2°、25.1±0.2°、26.4±0.2°、26.9±0.2°、29.0±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form M is selected from the group including 10 or 10 or more
2 θ values: 7.7 ± 0.2 °, 8.7 ± 0.2 °, 11.1 ± 0.2 °, 13.5 ± 0.2 °, 14.0 ± 0.2 °, 14.5 ± 0.2 °, 17.7 ±
0.2°、18.4±0.2°、19.2±0.2°、20.6±0.2°、21.5±0.2°、22.1±0.2°、22.6±0.2°、23.0±
0.2°、24.4±0.2°、25.1±0.2°、26.4±0.2°、26.9±0.2°、29.0±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form M can further comprise 1 or 1 or more and select
From 2 θ values of the following group: 6.3 ± 0.2 °, 15.2 ± 0.2 °, 16.0 ± 0.2 °, 16.6 ± 0.2 °, 17.2 ± 0.2 °, 27.4 ±
0.2°、28.5±0.2°、29.6±0.2°、30.0±0.2°、31.0±0.2°、32.1±0.2°、32.6±0.2°、33.8±
0.2°、34.6±0.2°、35.4±0.2°、36.2±0.2°、37.2±0.2°、38.1±0.2°、38.6±0.2°、39.7±
0.2°、43.7±0.2°。
In another preferred example, the X-ray powder diffraction pattern of the crystal form M is basic as Figure 44 is characterized.
In another preferred example, the TGA figure of the crystal form M is basic as Figure 46 is characterized.
In another preferred example, the DSC figure of the crystal form M has heat absorption within the scope of 66~80 and 109~126 DEG C
Peak.
In another preferred example, the DSC figure of the crystal form M is basic as Figure 45 is characterized.
In another preferred example, the crystal form M purity is greater than 95%.
Second aspect of the present invention provides a kind of composition pesticide, and the composition includes:
(a) solvate as described in the first aspect of the invention, and (b) acceptable carrier in Pesticide Science.
Third aspect present invention, a method of crystal form B described in first aspect present invention is prepared, comprising steps of
(i) compound of formula I is provided in the first solution of 2- butanone dissolved clarification;
(ii) normal heptane is added in the first solution of Xiang Shangshu, forms the second solution, and carry out at crystallization to the second solution
Reason, obtains crystal form B described in first aspect present invention.
Fourth aspect present invention, a method of crystal form C described in first aspect present invention is prepared, comprising steps of
(i) compound of formula I is provided in the first solution of diethy-aceto oxalate dissolved clarification;
(ii) hexamethylene is added in the first solution of Xiang Shangshu, forms the second solution, and carry out at crystallization to the second solution
Reason, obtains crystal form C described in first aspect present invention.
Fifth aspect present invention, a method of crystal form D described in first aspect present invention is prepared, comprising steps of
(i) compound of formula I is provided in the first solution of acetone dissolved clarification;
(ii) it volatilizees to the first solution, obtains crystal form D described in first aspect present invention.
Sixth aspect present invention, a method of crystal form E described in first aspect present invention is prepared, comprising steps of
(i) compound of formula I is provided in the first solution of tetrahydrofuran dissolved clarification;
(ii) it volatilizees to the first solution, obtains crystal form E described in first aspect present invention.
Seventh aspect present invention, a method of crystal form F described in first aspect present invention is prepared, comprising steps of
(i) compound of formula I is provided in the first solution of 2- methyltetrahydrofuran dissolved clarification;
(ii) it volatilizees to the first solution, obtains crystal form F described in first aspect present invention.
Eighth aspect present invention, a method of crystal form G described in first aspect present invention is prepared, comprising steps of
(i) compound of formula I is provided in the first solution of butyl acetate dissolved clarification;
(ii) it volatilizees to the first solution, obtains crystal form G described in first aspect present invention.
Ninth aspect present invention, a method of crystal form H described in first aspect present invention is prepared, comprising steps of
(i) compound of formula I is provided in the first solution of pyridine dissolved clarification;
(ii) hexamethylene is added in the first solution of Xiang Shangshu, forms the second solution, and carry out at crystallization to the second solution
Reason, obtains crystal form H described in first aspect present invention.
Tenth aspect present invention, a method of crystal form I described in first aspect present invention is prepared, comprising steps of
(i) compound of formula I is provided in the first solution of propione dissolved clarification;
(ii) n-hexane is added in the first solution of Xiang Shangshu, forms the second solution, and carry out at crystallization to the second solution
Reason, obtains crystal form I described in first aspect present invention.
The tenth one side of the present invention, a method of crystal form J described in first aspect present invention is prepared, comprising steps of
(i) compound of formula I is provided in the first solution of 1,2- dichloroethanes dissolved clarification;
(ii) hexamethylene is added in the first solution of Xiang Shangshu, forms the second solution, and carry out at crystallization to the second solution
Reason, obtains crystal form J described in first aspect present invention.
The twelfth aspect of the present invention, a method of crystal form K described in first aspect present invention is prepared, comprising steps of
(i) compound of formula I is provided in the first solution of 1,4- dioxane dissolved clarification;
(ii) hexamethylene is added in the first solution of Xiang Shangshu, forms the second solution, and carry out at crystallization to the second solution
Reason, obtains crystal form K described in first aspect present invention.
The 13rd aspect of the present invention, a method of crystal form L described in first aspect present invention is prepared, comprising steps of
(i) compound of formula I is provided in the first solution of butyl acetate dissolved clarification;
(ii) n-hexane is added in the first solution of Xiang Shangshu, forms the second solution, and carry out at crystallization to the second solution
Reason, obtains crystal form L described in first aspect present invention.
Fourteenth aspect of the present invention, a method of crystal form M described in first aspect present invention is prepared, comprising steps of
(i) compound of formula I is provided in the first solution of propione dissolved clarification;
(ii) n-hexane is added in the first solution of Xiang Shangshu, forms the second solution, and carry out at crystallization to the second solution
Reason, obtains crystal form M described in first aspect present invention.
The fifteenth aspect of the present invention provides solvate or second aspect of the present invention described in a kind of first aspect present invention
The purposes of the composition pesticide, for preventing or controlling disease;Or for inhibiting harmful micro- on agricultural, forestry or gardening
Biology.
In another preferred example, the prevention or control are the prevention on agricultural, forestry or gardening or control disease.
In another preferred example, disease plant disease selected from the group below: downy mildew, powdery mildew, anthracnose, tikka
Disease, or combinations thereof.
In another preferred example, the harmful microorganism is selected from the group: Ascomycetes, Basidiomycetes, deuteromycetes and
Oomycete, or combinations thereof.
It should be understood that above-mentioned each technical characteristic of the invention and having in below (eg embodiment) within the scope of the present invention
It can be combined with each other between each technical characteristic of body description, to form a new or preferred technical solution.As space is limited, exist
This no longer tires out one by one states.
Detailed description of the invention
Fig. 1 shows the XRPD map of Fluoxastrobin crystal form B
Fig. 2 shows the DSC figure of Fluoxastrobin crystal form B
Fig. 3 shows the TGA figure of Fluoxastrobin crystal form B
Fig. 4 shows crystal form B molecule stereo structure perspective view
Fig. 5 shows that crystal form B structure cell accumulates perspective view
Fig. 6 shows the XRPD map of Fluoxastrobin crystal form C
Fig. 7 shows the DSC figure of Fluoxastrobin crystal form C
Fig. 8 shows the TGA figure of Fluoxastrobin crystal form C
Fig. 9 shows crystal form C molecule stereo structure perspective view
Figure 10 shows that crystal form C structure cell accumulates perspective view
Figure 11 shows five days high-temperature stability XRPD maps of crystal form C
Figure 12 shows ten days high-temperature stability XRPD maps of crystal form C
Figure 13 shows the XRPD map of Fluoxastrobin crystal form D
Figure 14 shows the DSC figure of Fluoxastrobin crystal form D
Figure 15 shows the TGA figure of Fluoxastrobin crystal form D
Figure 16 shows crystal form D molecule stereo structure perspective view
Figure 17 shows that crystal form D structure cell accumulates perspective view
Figure 18 shows the XRPD map of Fluoxastrobin crystal form E
Figure 19 shows the DSC figure of Fluoxastrobin crystal form E
Figure 20 shows the TGA figure of Fluoxastrobin crystal form E
Figure 21 shows crystal form E molecule stereo structure perspective view
Figure 22 shows that crystal form E structure cell accumulates perspective view
Figure 23 shows the XRPD map of Fluoxastrobin crystal form F
Figure 24 shows the DSC figure of Fluoxastrobin crystal form F
Figure 25 shows the TGA figure of Fluoxastrobin crystal form F
Figure 26 shows the XRPD map of Fluoxastrobin crystal form G
Figure 27 shows the DSC figure of Fluoxastrobin crystal form G
Figure 28 shows the TGA figure of Fluoxastrobin crystal form G
Figure 29 shows the XRPD map of Fluoxastrobin crystal form H
Figure 30 shows the DSC figure of Fluoxastrobin crystal form H
Figure 31 shows the TGA figure of Fluoxastrobin crystal form H
Figure 32 shows the XRPD map of Fluoxastrobin crystal form I
Figure 33 shows the DSC figure of Fluoxastrobin crystal form I
Figure 34 shows the TGA figure of Fluoxastrobin crystal form I
Figure 35 shows the XRPD map of Fluoxastrobin crystal form J
Figure 36 shows the DSC figure of Fluoxastrobin crystal form J
Figure 37 shows the TGA figure of Fluoxastrobin crystal form J
Figure 38 shows the XRPD map of Fluoxastrobin crystal form K
Figure 39 shows the DSC figure of Fluoxastrobin crystal form K
Figure 40 shows the TGA figure of Fluoxastrobin crystal form K
Figure 41 shows the XRPD map of Fluoxastrobin crystal form L
Figure 42 shows the DSC figure of Fluoxastrobin crystal form L
Figure 43 shows the TGA figure of Fluoxastrobin crystal form L
Figure 44 shows the XRPD map of Fluoxastrobin crystal form M
Figure 45 shows the DSC figure of Fluoxastrobin crystal form M
Figure 46 shows the TGA figure of Fluoxastrobin crystal form M
Specific embodiment
The present inventor by extensive and in-depth research, be surprised to find that for the first time the solvate of Fluoxastrobin, its application and
Preparation method.The solvate purity is high, has good thermal stability and non-hygroscopic, and be better than in terms of solubility
Existing Fluoxastrobin.Inhibit harmful microbe composition pesticide suitable for preparation, to sac fungus, basidiomycetes, partly know
The major part disease such as downy mildew, powdery mildew, anthracnose, leaf spot caused by four major class disease fungi of bacterium and Oomycete has preferably
Preventive effect.In addition, solvate preparation method of the invention is simple, it is suitble to large-scale industrial production.On this basis, inventor
Complete the present invention.
Term explanation
Unless otherwise defined, otherwise whole technologies used herein and scientific term all have such as fields of the present invention
The normally understood identical meanings of those of ordinary skill.
As used herein, in use, term " about " means that the value can be from enumerating in mentioning the numerical value specifically enumerated
Value changes not more than 1%.For example, as used herein, statement " about 100 " include 99 and 101 and between whole values (for example,
99.1,99.2,99.3,99.4 etc.).
As used herein, term " containing " or " including (including) " can be open, semi-enclosed and enclosed.It changes
Yan Zhi, the term also include " substantially by ... constitute " or " by ... constitute ".
As used herein, term " n or n or more 2 θ values selected from the group below " refers to including n and any just whole greater than n
Number (such as n, n+1 ...), wherein upper limit Nup is the number of all 2 θ peak values in the group.Such as " 1 or 1 or more " is not only
Including 1,2,3,4,5,6,7,8,9,10,11,12,13,14,15,16,17,18,19,20,21 ... upper limit Nup is each just whole
Number, further includes " 2 or 2 or more ", " 3 or 3 or more ", " 4 or 4 or more ", " 5 or 5 or more ", " 6 or 6
More than a ", " 7 or 7 or more ", " 8 or 8 or more ", " 9 or 9 or more ", " 10 or 10 or more ", etc. ranges.
Such as " 3 or 3 or more " not only include 3,4,5,6,7,8,9,10,11,12,13,14,15,16,17,18,19,20,
21 ... each positive integer of upper limit Nup further includes " 4 or 4 or more ", " 5 or 5 or more ", " 6 or 6 or more ", " 7
It is a or 7 or more ", " 8 or 8 or more ", " 9 or 9 or more ", " 10 or 10 or more ", etc. ranges.
Compound of formula I
Fluoxastrobin (compound of formula I), entitled (E) -2- { 2- [6- (2- cyano-benzene oxygen) pyrimidine-4-yl oxygroup] benzene of chemistry
Base } -3- methoxy-methyl acrylate.The compound is a kind of completely new β methoxy acrylic acid lipid fungicide, is able to suppress disease
Fungal mitochondria breathing, destroys the energy synthesis of germ, and triple function is treated and rooted out in tool protection.To sac fungus, basidiomycetes,
The major part disease such as downy mildew, powdery mildew, anthracnose, leaf spot caused by four major class disease fungi of Fungi Imperfecti and Oomycete has
Good preventive effect.
Polymorph
It is exactly to exist in the form of crystallization that solid, which is not in the form of unbodied,.In the case where crystal form, molecule is fixed
In three-dimensional lattice case.When compound is crystallized out from solution or slurries, the space lattice that it can be different is arranged
Crystallization (this property is referred to as " polymorphism "), forms the crystal with different crystal forms, this various crystal form
Referred to as " polymorph ".The different polymorphs of given substance can in terms of one or more physical attributes (such as solubility and
Rate of dissolution, true specific gravity, crystalline form, accumulation mode, mobility and/or solid-state stability) it is different from each other.
Crystallization
It can be by working solution, so that the solubility limit of compound of interest is exceeded, to complete production scale
Crystallization.This can be completed by a variety of methods, for example, dissolved compound at relatively high temperature, then cools down solution
To saturation limit.Or by boiling, atmospheric evaporation, vacuum drying or by some other methods reduce liquid bulk
Product.It can be come by the way that anti-solvent or compound is added in the mixture of solvent or such solvent wherein with low solubility
Reduce the solubility of compound of interest.Another optional method is to adjust pH value to reduce solubility.Related crystallization aspect
It is described in detail and refers to Crystallization, the third edition, J W Mullens, Butterworth-Heineman Ltd.,
1993,ISBN0750611294。
If it is expected that the formation of salt with crystallization occur simultaneously, if salt is smaller than dissolution of raw material degree in reaction medium,
Acid or alkali appropriate, which is added, can lead to the direct crystallization of required salt.Equally, smaller than reactant solubility in finally desired form
Medium in, the completion of synthetic reaction can make final product direct crystallization.
The optimization of crystallization may include that the crystal of required form is used to be inoculated in crystallization medium as crystal seed.In addition, many knots
Crystal method uses the combination of above-mentioned strategy.One embodiment be at high temperature by interested compound dissolution in a solvent, with
The anti-solvent of proper volume is added by controlled way afterwards, so that system is just under saturated level.At this point, needed for being added
The crystal seed (and the integrality for keeping crystal seed) of form, system is cooling to complete to crystallize.
Solvate
In compound or drug molecule and solvent molecule contact process, external condition and interior condition factor cause solvent point
The situation that son forms eutectic with compound molecule and remains in solid matter is difficult to avoid that.It is formed after compound and solvent crystallization
Substance be referred to as solvate (solvate).Be easy with organic compound formed solvate solvent type be water, methanol,
Benzene, ethyl alcohol, ether, aromatic hydrocarbons, heterocyclic arene etc..
Hydrate is a kind of special solvate.In pharmaceuticals industry, no matter the synthesis of bulk pharmaceutical chemicals, pharmaceutical preparation,
In medicine storage and pharmaceutical activity evaluation, hydrate all has the value individually discussed because of its particularity.
In the present invention, the crystal form of compound shown in Formulas I is channel-style solvate.
Composition pesticide
" active constituent " or " reactive compound " in composition pesticide of the present invention refers to Formulas I of the present invention
Object is closed, especially with compound of formula I existing for crystal form of the present invention.
" active constituent " or " reactive compound " and composition pesticide of the present invention can be used for preventing or controlling disease;
Or for inhibiting harmful microorganism on agricultural, forestry or gardening.
Differential scanning calorimetry
Also known as " differential scanning calorimetry " (DSC) is during heating, to measure between measured matter and reference substance
A kind of technology of relationship between energy difference and temperature.The property of peak position, shape and peak number mesh and substance on DSC map has
It closes, therefore can qualitatively be used to identify substance.This method commonly used in the art detects phase transition temperature, the glass transition temperature of substance
The many kinds of parameters such as degree, reaction heat.
Preparation method
When the present invention prepares Fluoxastrobin crystal form B, C, H, I, use dissolved is this to be easy and fast to a large amount of industrialized productions
Method;The method for preparing Fluoxastrobin crystal form D, E, F, G, H, I, J, K, L, M, it is characterised in that use the method for volatilization, two kinds of sides
Method is simple and easy to do, is easy to industrialized production.
Purposes
The present invention provides the purposes of the solvate of Fluoxastrobin and its composition pesticide, the solvate is efficiently wide
Spectrum, to downy mildew, powdery mildew, anthracnose, leaf caused by sac fungus, four major class disease fungi of basidiomycetes, Fungi Imperfecti and Oomycete
The major part disease such as pinta has good preventive effect.
Main advantages of the present invention
(1) compound of formula I solvate of the invention has good thermal stability and non-hygroscopic, and in solubility
Aspect is better than existing Fluoxastrobin.
(2) compound of formula I solvate preparation method of the invention is simple, is suitble to large-scale industrial production.
(3) compound of formula I solvate of the invention can be used for preventing or controlling disease;Or in agricultural, forestry
Or inhibit harmful microorganism on gardening.
Present invention will be further explained below with reference to specific examples.It should be understood that these embodiments are merely to illustrate the present invention
Rather than it limits the scope of the invention.In the following examples, the experimental methods for specific conditions are not specified, usually according to conventional strip
Part, or according to the normal condition proposed by manufacturer.Unless otherwise stated, otherwise percentage and number are calculated by weight.
Experimental material used in following embodiment and reagent can obtain unless otherwise instructed from commercially available channel.Room temperature or
Room temperature refers to 4 DEG C -25 DEG C, preferably 15-25 DEG C.
Test method:
XRD (X-ray powder diffraction) method: instrument: Rigaku Ultima IV powder diffractometer, target: Cu-K α
(40kV, 40mA) is carried out using D/tex Ultra detector at room temperature.Scanning range, from 3 ° to 45 °, scans in 2 sections θ
Speed is 20 °/minute.
By including that many factors below generate measurement difference relevant to this kind of X-ray powder diffraction analysis result: (a)
Error in sample preparation object (such as height of specimen), (b) instrument error, (c) calibrate difference, (d) personal error (including
The error occurred when measuring peak position), and (e) property (such as preferred orientation error) of substance.Calibration error and sample
Height error frequently results in displacement of all peaks in the same direction.When using flat bracket, the small difference of height of specimen will
Lead to the big displacement of the peak position XRD.System research shows the peak position that the sample height difference of 1mm can lead to up to 1 ° of 2 θ
It moves.These displacements can be identified from X-ray diffractogram, and can be by compensating for the displacement (by system calibration
The factor is used for all peak position values) or the recalibration instrument elimination displacement.As described above, being made by application system calibration factor
Peak position is consistent, measurement error of the recoverable from different instruments.
TGA (thermogravimetric analysis) method: instrument model: TA Q500 thermogravimetric analyzer, using N2Atmosphere, heating rate 10
℃/min。
DSC (differential scanning calorimetry) method: instrument model: TA Q2000 differential scanning calorimeter, using N2Atmosphere rises
Warm speed is 10 DEG C/min.
The preparation of 1. crystal form A of embodiment
Preparation method in the preparation method referenced patent CN101522639A of crystal form A.
The preparation of 2. crystal form B Fluoxastrobin of embodiment
50mg raw material is weighed in container, 0.5ml 2- butanone dissolved clarification is added, adds 2.5ml normal heptane, is filtered, vacuum
Crystal form B Fluoxastrobin (yield 95%) is obtained after drying.
Resulting crystal form B Fluoxastrobin, XRD spectrum are basic as shown in Figure 1, diffraction angular data is substantially as shown in table 1 below.
The XRD data of 1 crystal form B of table
The DSC of crystal form B schemes as shown in Fig. 2, wherein first endothermic peak is corresponding loses dissolving agent process, and second endothermic peak is corresponding
Fusion and decomposition process has endothermic peak within the scope of 100~125 DEG C.
The TGA of crystal form B schemes as shown in figure 3, as seen from the figure substantially without weightlessness before decomposition.
In addition, have also obtained crystal form B in embodiment 2 does single crystal X-ray diffraction (SXRD) structure, as shown in Figure 4, Figure 5,
Its parameter is as shown in table 2 below:
The single crystal X-ray diffraction parameter of 2 crystal form B of table
The solubility of embodiment 3. crystal form A and crystal form B compares
It weighs excessive crystal form A and crystal form B is suspended in methanol, after shaking 48h, test solubility, test knot using UPLC
Fruit is as shown in table 3 below:
The solubility of table 3 crystal form B and crystal form A
Crystal form | Solubility (mg/ml) |
Crystal form A | 22.9 |
Crystal form B | 30.0 |
The solubility of crystal form B in methyl alcohol is greater than crystal form A, about the 1.3 of crystal form A times as can be seen from Table 3.
The preparation of 4. crystal form C Fluoxastrobin of embodiment
50mg raw material is weighed in container, 1.5ml diethy-aceto oxalate dissolved clarification is added, adds 7.5ml hexamethylene, is filtered,
Fluoxastrobin crystal form C (yield 97%) is obtained after solid vacuum drying.
Resulting crystal form C Fluoxastrobin, XRD spectrum are basic as shown in fig. 6, diffraction angular data is substantially as shown in table 4 below.
The XRD data of 4 crystal form C of table
The DSC of crystal form C schemes as shown in fig. 7, wherein first endothermic peak is corresponding loses dissolving agent process, and second endothermic peak is corresponding
Fusion and decomposition process has endothermic peak within the scope of 86~103 DEG C.
The TGA of crystal form C schemes as shown in figure 8, as seen from the figure substantially without weightlessness before decomposition.
In addition, have also obtained crystal form C in embodiment 4 does single crystal X-ray diffraction (SXRD) structure, such as Fig. 9, Tu10Suo
Show, parameter is as shown in table 5 below:
The single crystal X-ray diffraction parameter of 5 crystal form C of table
5. crystal form C Fluoxastrobin study on the stability of embodiment
Crystal form C Fluoxastrobin sample in embodiment 4 is placed in 60 ± 2 DEG C of baking ovens, after 5 days and 10 days by sample take out into
Row XRPD test, to investigate sample to the stability of crystal form of temperature.As shown in Figure 11, Figure 12, the results showed that, crystal form under this condition
C sample is stablized.
The solubility of embodiment 6. crystal form A and crystal form C compares
It weighs excessive crystal form A and crystal form C is suspended in methanol, after shaking 1h, test solubility, test result using UPLC
It is as shown in table 6 below:
The solubility of table 6 crystal form C and crystal form A
Crystal form | Solubility (mg/ml) |
Crystal form A | 22.9 |
Crystal form C | 25.1 |
It can be concluded that the solubility of crystal form C in methyl alcohol is greater than crystal form A, about the 1.1 of crystal form A times.
The preparation of 7. crystal form D Fluoxastrobin of embodiment
50mg raw material is weighed in container, 0.25ml acetone dissolved clarification is added, room temperature volatilization obtains phonetic after solid vacuum drying
Bacterium ester crystal form D (yield 97%).
Resulting crystal form D Fluoxastrobin, XRD spectrum is substantially as shown in figure 13, and diffraction angular data is substantially as shown in table 7 below.
The XRD data of 7 crystal form D of table
The DSC figure of crystal form D is as shown in figure 14, wherein first endothermic peak is corresponding to lose dissolving agent process, second endothermic peak pair
Fusion and decomposition process is answered, there is endothermic peak within the scope of 105~144 DEG C.
The TGA figure of crystal form D is as shown in figure 15, as seen from the figure substantially without weightlessness before decomposition.
In addition, have also obtained crystal form D in embodiment 7 does single crystal X-ray diffraction (SXRD) structure, such as Figure 16, Tu17Suo
Show, parameter is as shown in table 8 below:
The single crystal X-ray diffraction parameter of 8 crystal form D of table
The preparation of 8. crystal form E Fluoxastrobin of embodiment
50mg raw material is weighed in container, 0.25ml tetrahydrofuran dissolved clarification is added, room temperature volatilization obtains after solid vacuum drying
To Fluoxastrobin crystal form E (yield 95%).
Resulting crystal form E Fluoxastrobin, XRD spectrum is substantially as shown in figure 18, and diffraction angular data is substantially as shown in table 9 below.
The XRD data of 9 crystal form E of table
The DSC figure of crystal form E is as shown in figure 19, wherein first endothermic peak is corresponding to lose dissolving agent process, second endothermic peak pair
Fusion and decomposition process is answered, there is endothermic peak within the scope of 106~123 DEG C.
The TGA figure of crystal form E is as shown in figure 20, as seen from the figure substantially without weightlessness before decomposition.
In addition, have also obtained crystal form E in embodiment 8 does single crystal X-ray diffraction (SXRD) structure, such as Figure 21, Tu22Suo
Show, parameter is as shown in the following table 10:
The single crystal X-ray diffraction parameter of 10 crystal form E of table
The solubility of embodiment 9. crystal form A and crystal form E compares
It weighs excessive crystal form A and crystal form E is suspended in methanol, after shaking 1h, test solubility, test result using UPLC
It is as shown in table 11 below:
The solubility of table 11 crystal form E and crystal form A
Crystal form | Solubility (mg/ml) |
Crystal form A | 22.9 |
Crystal form E | 25.4 |
It can be concluded that the solubility of crystal form E in methyl alcohol is greater than crystal form A, about the 1.11 of crystal form A times.
The preparation of 10. crystal form F Fluoxastrobin of embodiment
50mg raw material is weighed in container, 1ml 2- methyltetrahydrofuran dissolved clarification, room temperature volatilization, solid vacuum drying is added
After obtain Fluoxastrobin crystal form F (yield 93%).
Resulting crystal form F Fluoxastrobin, XRD spectrum is substantially as shown in figure 23, and diffraction angular data is substantially as shown in table 12 below.
The XRD data of 12 crystal form F of table
2-Theta | d(A) | I (Height) % |
7.1 | 12.4103 | 6737 |
8.5 | 10.3963 | 11777 |
10.9 | 8.0773 | 275 |
11.8 | 7.4797 | 177 |
12.7 | 6.9742 | 489 |
13.3 | 6.6714 | 730 |
13.7 | 6.4399 | 2310 |
14.5 | 6.1032 | 1565 |
15.6 | 5.6684 | 492 |
16.1 | 5.4881 | 152 |
16.9 | 5.2428 | 7151 |
17.5 | 5.0633 | 4190 |
18.4 | 4.8027 | 564 |
18.7 | 4.7407 | 987 |
20.1 | 4.4053 | 3863 |
20.6 | 4.2996 | 8003 |
21.2 | 4.195 | 2137 |
21.7 | 4.0995 | 5832 |
23.2 | 3.8242 | 5822 |
23.6 | 3.7667 | 2680 |
24.6 | 3.6217 | 2446 |
25.1 | 3.542 | 1742 |
25.8 | 3.4426 | 1029 |
26.9 | 3.3095 | 2833 |
27.5 | 3.2375 | 282 |
28.3 | 3.1489 | 984 |
29.1 | 3.0661 | 1267 |
29.6 | 3.0117 | 602 |
30.7 | 2.9119 | 272 |
31.4 | 2.8484 | 1221 |
32.3 | 2.7707 | 497 |
33.7 | 2.6604 | 529 |
33.9 | 2.6376 | 499 |
35.0 | 2.5628 | 276 |
35.5 | 2.5293 | 322 |
36.5 | 2.461 | 295 |
36.8 | 2.4365 | 233 |
38.2 | 2.3552 | 352 |
40.5 | 2.2229 | 157 |
41.3 | 2.1824 | 262 |
43.2 | 2.0931 | 189 |
43.7 | 2.0696 | 513 |
The DSC figure of crystal form F is as shown in figure 24, wherein first endothermic peak is corresponding to lose dissolving agent process, second endothermic peak pair
Fusion and decomposition process is answered, there is endothermic peak within the scope of 106~129 DEG C.
The TGA figure of crystal form F is as shown in figure 25, as seen from the figure substantially without weightlessness before decomposition.
The preparation of 11. crystal form G Fluoxastrobin of embodiment
50mg raw material is weighed in container, 2ml butyl acetate dissolved clarification is added, room temperature volatilization obtains after solid vacuum drying
Fluoxastrobin crystal form G (yield 95%).
Resulting crystal form G Fluoxastrobin, XRD spectrum is substantially as shown in figure 26, and diffraction angular data is substantially as shown in table 13 below.
The XRD data of 13 crystal form G of table
The DSC figure of crystal form G is as shown in figure 27, wherein first endothermic peak is corresponding to lose dissolving agent process, second endothermic peak pair
Fusion and decomposition process is answered, there is endothermic peak within the scope of 83~104 DEG C.
The TGA figure of crystal form G is as shown in figure 28, as seen from the figure substantially without weightlessness before decomposition.
The solubility of embodiment 12. crystal form A and crystal form G compares
It weighs excessive crystal form A and crystal form G is suspended in methanol, after shaking 1h, test solubility, test result using UPLC
It is as shown in table 14 below:
The solubility of table 14 crystal form G and crystal form A
Crystal form | Solubility (mg/ml) |
Crystal form A | 22.9 |
Crystal form G | 32.3 |
It can be concluded that the solubility of crystal form G in methyl alcohol is greater than crystal form A, about the 1.41 of crystal form A times.
The preparation of 13. crystal form H Fluoxastrobin of embodiment
50mg raw material is weighed in container, 0.3ml pyridine dissolved clarification is added, adds 1.5ml hexamethylene, is filtered, solid is true
Fluoxastrobin crystal form H (yield 95%) is obtained after sky is dry.
Resulting crystal form H Fluoxastrobin, XRD spectrum is substantially as shown in figure 29, and diffraction angular data is substantially as shown in table 15 below.
The XRD data of 15 crystal form H of table
The DSC figure of crystal form H is as shown in figure 30, wherein first endothermic peak is corresponding to lose dissolving agent process, second endothermic peak pair
Fusion and decomposition process is answered, there is endothermic peak within the scope of 83~122 DEG C.
The TGA figure of crystal form H is as shown in figure 31, as seen from the figure substantially without weightlessness before decomposition.
The solubility of embodiment 14. crystal form A and crystal form H compares
It weighs excessive crystal form A and crystal form H is suspended in methanol, after shaking 1h, test solubility, test result using UPLC
It is as shown in table 16:
The solubility of table 16 crystal form H and crystal form A
Crystal form | Solubility (mg/ml) |
Crystal form A | 22.9 |
Crystal form H | 26.6 |
It can be concluded that the solubility of crystal form H in methyl alcohol is greater than crystal form A, about the 1.16 of crystal form A times.
The preparation of 15. crystal form I Fluoxastrobin of embodiment
50mg raw material is weighed in container, 1ml propione dissolved clarification is added, adds 5ml n-hexane, is filtered, solid vacuum
Fluoxastrobin crystal form I (yield 97%) is obtained after drying.
Resulting crystal form I Fluoxastrobin, XRD spectrum is substantially as shown in figure 32, and diffraction angular data is substantially as shown in table 17 below.
The XRD data of 17 crystal form I of table
The DSC figure of crystal form I is as shown in figure 33, wherein first endothermic peak is corresponding to lose dissolving agent process, second endothermic peak pair
Fusion and decomposition process is answered, there is endothermic peak within the scope of 106~127 DEG C.
The TGA figure of crystal form I is as shown in figure 34, as seen from the figure substantially without weightlessness before decomposition.
The preparation of 16. crystal form J Fluoxastrobin of embodiment
50mg raw material is weighed in container, 0.2ml 1,2- dichloroethanes dissolved clarification is added, then solution is added to 1ml hexamethylene
In alkane, filtering obtains Fluoxastrobin crystal form J (yield 97%) after solid vacuum drying.
Resulting crystal form J Fluoxastrobin, XRD spectrum is substantially as shown in figure 35, and diffraction angular data is substantially as shown in table 18 below.
The XRD data of 18 crystal form J of table
The DSC figure of crystal form J is as shown in figure 36, wherein first endothermic peak is corresponding to lose dissolving agent process, second endothermic peak pair
Fusion and decomposition process is answered, there is endothermic peak within the scope of 110~133 DEG C.
The TGA figure of crystal form J is as shown in figure 37, as seen from the figure substantially without weightlessness before decomposition.
The solubility of embodiment 17. crystal form A and crystal form J compares
It weighs excessive crystal form A and crystal form J is suspended in methanol, after shaking 1h, test solubility, test result using UPLC
It is as shown in table 19 below:
The solubility of table 19 crystal form J and crystal form A:
Crystal form | Solubility (mg/ml) |
Crystal form A | 22.9 |
Crystal form J | 26.0 |
It can be concluded that the solubility of crystal form J in methyl alcohol is greater than crystal form A, about the 1.13 of crystal form A times.
The preparation of 18. crystal form K Fluoxastrobin of embodiment
50mg raw material is weighed in container, 0.5ml Isosorbide-5-Nitrae-dioxane dissolved clarification is added, then solution is added to 2.5ml ring
Hexane, filtering obtain Fluoxastrobin crystal form K (yield 97%) after solid vacuum drying.
Resulting crystal form K Fluoxastrobin, XRD spectrum is substantially as shown in figure 38, and diffraction angular data is substantially as shown in table 20 below.
The XRD data of 20 crystal form K of table
The DSC figure of crystal form K is as shown in figure 39, wherein first endothermic peak is corresponding to lose dissolving agent process, second endothermic peak pair
Fusion and decomposition process is answered, there is endothermic peak within the scope of 99~126 DEG C.
The TGA figure of crystal form K is as shown in figure 40, as seen from the figure substantially without weightlessness before decomposition.
The solubility of embodiment 19. crystal form A and crystal form K compares
It weighs excessive crystal form A and crystal form K is suspended in methanol, after shaking 1h, test solubility, test result using UPLC
It is as shown in table 21 below:
The solubility of table 21 crystal form K and crystal form A:
Crystal form | Solubility (mg/ml) |
Crystal form A | 22.9 |
Crystal form K | 23.5 |
It can be concluded that the solubility of crystal form K in methyl alcohol is greater than crystal form A, about the 1.03 of crystal form A times.
The preparation of 20. crystal form L Fluoxastrobin of embodiment
50mg raw material is weighed in container, 2ml butyl acetate dissolved clarification is added, then butyl acetate solution is being added to 10ml just
In hexane, filtering obtains Fluoxastrobin crystal form L (yield 93%) after solid vacuum drying.
Resulting crystal form L Fluoxastrobin, XRD spectrum is substantially as shown in figure 41, and diffraction angular data is substantially as shown in table 22 below.
The XRD data of 22 crystal form L of table
The DSC figure of crystal form L is as shown in figure 42, wherein first endothermic peak is corresponding to lose dissolving agent process, second endothermic peak pair
Fusion and decomposition process is answered, there is endothermic peak within the scope of 84~99 DEG C.
The TGA figure of crystal form L is as shown in figure 43, as seen from the figure substantially without weightlessness before decomposition.
The preparation of 21. crystal form M Fluoxastrobin of embodiment
50mg raw material is weighed in container, 1ml propione dissolved clarification is added, then solution is added in 5ml n-hexane, mistake
Filter obtains Fluoxastrobin crystal form M (yield 96%) after solid vacuum drying.
Resulting crystal form M Fluoxastrobin, XRD spectrum is substantially as shown in figure 44, and diffraction angular data is substantially as shown in table 23 below.
The XRD data of 23 crystal form M of table
The DSC figure of crystal form M is as shown in figure 45, wherein first endothermic peak is corresponding to lose dissolving agent process, second endothermic peak pair
Fusion and decomposition process is answered, there is endothermic peak within the scope of 109~126 DEG C.
The TGA figure of crystal form M is as shown in figure 46, as seen from the figure substantially without weightlessness before decomposition.
All references mentioned in the present invention is incorporated herein by reference, independent just as each document
It is incorporated as with reference to such.In addition, it should also be understood that, after reading the above teachings of the present invention, those skilled in the art can
To make various changes or modifications to the present invention, such equivalent forms equally fall within model defined by the application the appended claims
It encloses.
Claims (10)
1. a kind of solvate of compound of formula I,
Preferably, the solvate is selected from the group: crystal form B, crystal form C, crystal form D, crystal form E, crystal form F, crystal form G, crystal form H, crystalline substance
Type I, crystal form J, crystal form K, crystal form L, crystal form M.
2. solvate as described in claim 1, which is characterized in that the solvate is crystal form B, and the crystal form B has
Feature selected from the group below:
(1) X-ray powder diffraction pattern of the crystal form B includes 3 or 3 or more 2 θ values selected from the group below: 7.6 ± 0.2 °,
8.6±0.2°、14.4±0.2°、16.9±0.2°、18.2±0.2°、18.8±0.2°、20.5±0.2°、21.3±0.2°、
22.4±0.2°、22.8±0.2°、24.2±0.2°、26.1±0.2°、26.7±0.2°、28.7±0.2°、30.4±0.2°、
30.9±0.2°,36.0±0.2°,38.2±0.2°;And/or
(2) X-ray powder diffraction pattern of the crystal form B is basic as Fig. 1 is characterized;And/or
(3) the TGA figure of the crystal form B is basic as Fig. 3 is characterized;And/or
(4) the DSC figure of the crystal form B has endothermic peak within the scope of 62~88 DEG C and 100~125 DEG C;And/or
(5) the DSC figure of the crystal form B is basic as Fig. 2 is characterized;And/or
(6) the crystal form B purity is greater than 95%;And/or
The solvate is crystal form C, and the crystal form C has feature selected from the group below:
(1) X-ray powder diffraction pattern of the crystal form C includes 3 or 3 or more 2 θ values selected from the group below: 7.0 ± 0.2 °,
7.3±0.2°、7.6±0.2°、8.5±0.2°、12.1±0.2°、13.9±0.2°、14.7±0.2°、17.0±0.2°、
18.1±0.2°、18.9±0.2°、20.7±0.2°、21.5±0.2°、22.6±0.2°、22.8±0.2°、24.5±0.2°、
25.8±0.2°、26.3±0.2°、26.8±0.2°、27.7±0.2°、28.7±0.2°、29.0±0.2°、30.6±0.2°、
30.8±0.2°,31.2±0.2°,35.0±0.2°,36.2±0.2°,38.5±0.2°;And/or
(2) X-ray powder diffraction pattern of the crystal form C is basic as Fig. 6 is characterized;And/or
(3) the TGA figure of the crystal form C is basic as Fig. 8 is characterized;And/or
(4) the DSC figure of the crystal form C has endothermic peak within the scope of 86~103 DEG C;And/or
(5) the DSC figure of the crystal form C is basic as Fig. 7 is characterized;And/or
(6) the crystal form C purity is greater than 95%;And/or
The solvate is crystal form D, and the crystal form D has feature selected from the group below:
(1) X-ray powder diffraction pattern of the crystal form D includes 3 or 3 or more 2 θ values selected from the group below: 7.6 ± 0.2 °,
8.5±0.2°、13.5±0.2°、14.4±0.2°、16.5±0.2°、17.0±0.2°、18.2±0.2°、18.7±0.2°、
20.6±0.2°、21.0±0.2°、21.3±0.2°、22.4±0.2°、23.6±0.2°、24.1±0.2°、25.9±0.2°、
26.5±0.2°,28.2±0.2°,28.6±0.2°,28.9±0.2°,30.4±0.2°,30.8±0.2°;And/or
(2) X-ray powder diffraction pattern of the crystal form D is basic as Figure 13 is characterized;And/or
(3) the TGA figure of the crystal form D is basic as Figure 15 is characterized;And/or
(4) the DSC figure of the crystal form D has endothermic peak within the scope of 57~87 DEG C and 105~144 DEG C;And/or
(5) the DSC figure of the crystal form D is basic as Figure 14 is characterized;And/or
(6) the crystal form D purity is greater than 95%.
3. solvate as described in claim 1, which is characterized in that the solvate is crystal form E, and the crystal form E has
Feature selected from the group below:
(1) X-ray powder diffraction pattern of the crystal form E includes 3 or 3 or more 2 θ values selected from the group below: 7.5 ± 0.2 °,
8.6±0.2°、13.4±0.2°、14.4±0.2°、14.7±0.2°、15.6±0.2°、16.5±0.2°、18.2±0.2°、
19.1±0.2°、20.6±0.2°、21.3±0.2°、22.8±0.2°、24.0±0.2°、24.5±0.2°、25.3±0.2°、
25.8±0.2°,26.6±0.2°,28.6±0.2°,30.2±0.2°,31.3±0.2°;And/or
(2) X-ray powder diffraction pattern of the crystal form E is basic as Figure 18 is characterized;And/or
(3) the TGA figure of the crystal form E is basic as Figure 20 is characterized;And/or
(4) the DSC figure of the crystal form E has endothermic peak within the scope of 77~100 DEG C and 106~123 DEG C;And/or
(5) the DSC figure of the crystal form E is basic as Figure 19 is characterized;And/or
(6) the crystal form E purity is greater than 95%;And/or
The solvate is crystal form F, and the crystal form F has feature selected from the group below:
(1) X-ray powder diffraction pattern of the crystal form F includes 3 or 3 or more 2 θ values selected from the group below: 7.1 ± 0.2 °,
8.5±0.2°、13.7±0.2°、14.5±0.2°、16.9±0.2°、17.5±0.2°、20.1±0.2°、20.6±0.2°、
21.2±0.2°、21.7±0.2°、23.2±0.2°、23.6±0.2°、24.6±0.2°、25.1±0.2°、25.8±0.2°、
26.9±0.2°,29.1±0.2°,31.4±0.2°;And/or
(2) X-ray powder diffraction pattern of the crystal form F is basic as Figure 23 is characterized;And/or
(3) the TGA figure of the crystal form F is basic as Figure 25 is characterized;And/or
(4) the DSC figure of the crystal form F has endothermic peak within the scope of 106~129 DEG C;And/or
(5) the DSC figure of the crystal form F is basic as Figure 24 is characterized;And/or
(6) the crystal form F purity is greater than 95%;And/or
The solvate is crystal form G, and the crystal form G has feature selected from the group below:
(1) X-ray powder diffraction pattern of the crystal form G includes 3 or 3 or more 2 θ values selected from the group below: 7.5 ± 0.2 °,
8.5±0.2°、13.9±0.2°、14.3±0.2°、14.6±0.2°、16.8±0.2°、18.1±0.2°、18.9±0.2°、
20.6±0.2°、21.2±0.2°、21.4±0.2°、22.4±0.2°、22.8±0.2°、24.3±0.2°、24.6±0.2°、
26.2±0.2°、26.7±0.2°、28.7±0.2°、30.3±0.2°、30.5±0.2°、30.7±0.2°、31.0±0.2°、
31.2±0.2°,36.0±0.2°,38.4±0.2°;And/or
(2) X-ray powder diffraction pattern of the crystal form G is basic as Figure 26 is characterized;And/or
(3) the TGA figure of the crystal form G is basic as Figure 28 is characterized;And/or
(4) the DSC figure of the crystal form G has endothermic peak within the scope of 83~104 DEG C;And/or
(5) the DSC figure of the crystal form G is basic as Figure 27 is characterized;And/or
(6) the crystal form G purity is greater than 95%.
4. solvate as described in claim 1, which is characterized in that the solvate is crystal form H, and the crystal form H has
Feature selected from the group below:
(1) X-ray powder diffraction pattern of the crystal form H includes 3 or 3 or more 2 θ values selected from the group below: 7.5 ± 0.2 °,
8.7±0.2°、13.5±0.2°、14.2±0.2°、14.5±0.2°、15.6±0.2°、18.0±0.2°、19.2±0.2°、
20.6±0.2°、21.4±0.2°、22.5±0.2°、23.7±0.2°、24.1±0.2°、25.1±0.2°、25.5±0.2°、
26.3±0.2°,26.8±0.2°,28.3±0.2°,28.5±0.2°,30.0±0.2°;And/or
(2) X-ray powder diffraction pattern of the crystal form H is basic as Figure 29 is characterized;And/or
(3) the TGA figure of the crystal form H is basic as Figure 31 is characterized;And/or
(4) the DSC figure of the crystal form H has endothermic peak within the scope of 62~81 DEG C and 83~122 DEG C;And/or
(5) the DSC figure of the crystal form H is basic as Figure 30 is characterized;And/or
(6) the crystal form H purity is greater than 95%;And/or
The solvate is crystal form I, and the crystal form I has feature selected from the group below:
(1) X-ray powder diffraction pattern of the crystal form I includes 3 or 3 or more 2 θ values selected from the group below: 7.5 ± 0.2 °,
8.5±0.2°、11.0±0.2°、13.8±0.2°、14.4±0.2°、15.9±0.2°、16.5±0.2°、17.5±0.2°、
19.0±0.2°、20.6±0.2°、21.4±0.2°、22.0±0.2°、22.5±0.2°、22.8±0.2°、23.9±0.2°、
24.4±0.2°、24.9±0.2°、26.3±0.2°、26.7±0.2°、28.4±0.2°、28.9±0.2°、30.6±0.2°、
36.2±0.2°;And/or
(2) X-ray powder diffraction pattern of the crystal form I is basic as Figure 32 is characterized;And/or
(3) the TGA figure of the crystal form I is basic as Figure 34 is characterized;And/or
(4) the DSC figure of the crystal form I has endothermic peak within the scope of 106~127 DEG C;And/or
(5) the DSC figure of the crystal form I is basic as Figure 33 is characterized;And/or
(6) the crystal form I purity is greater than 95%;And/or
The solvate is crystal form J, and the crystal form J has feature selected from the group below:
(1) X-ray powder diffraction pattern of the crystal form J includes 3 or 3 or more 2 θ values selected from the group below: 7.6 ± 0.2 °,
8.8±0.2°、14.4±0.2°、17.4±0.2°、18.2±0.2°、20.6±0.2°、21.5±0.2°、22.5±0.2°、
22.8±0.2°、26.2±0.2°、26.5±0.2°、28.8±0.2°、29.2±0.2°、30.1±0.2°、36.2±0.2°、
37.9±0.2°;And/or
(2) X-ray powder diffraction pattern of the crystal form J is basic as Figure 35 is characterized;And/or
(3) the TGA figure of the crystal form J is basic as Figure 37 is characterized;And/or
(4) the DSC figure of the crystal form J has endothermic peak within the scope of 110~133 DEG C;And/or
(5) the DSC figure of the crystal form J is basic as Figure 36 is characterized;And/or
(6) the crystal form J purity is greater than 95%.
5. solvate as described in claim 1, which is characterized in that the solvate is crystal form K, and the crystal form K has
Feature selected from the group below:
(1) X-ray powder diffraction pattern of the crystal form K includes 3 or 3 or more 2 θ values selected from the group below: 7.7 ± 0.2 °,
8.5±0.2°、8.8±0.2°、13.4±0.2°、14.4±0.2°、14.7±0.2°、17.4±0.2°、18.2±0.2°、
18.6±0.2°、19.0±0.2°、20.7±0.2°、21.3±0.2°、21.6±0.2°、22.5±0.2°、22.8±0.2°、
24.0±0.2°、24.3±0.2°、26.0±0.2°、26.6±0.2°、28.6±0.2°、29.0±0.2°、30.4±0.2°、
36.1±0.2°,36.3±0.2°,37.9±0.2°,38.2±0.2°;And/or
(2) X-ray powder diffraction pattern of the crystal form K is basic as Figure 38 is characterized;And/or
(3) the TGA figure of the crystal form K is basic as Figure 40 is characterized;And/or
(4) the DSC figure of the crystal form K has endothermic peak within the scope of 61~79 DEG C and 99~126 DEG C;And/or
(5) the DSC figure of the crystal form K is basic as Figure 39 is characterized;And/or
(6) the crystal form K purity is greater than 95%;And/or
The solvate is crystal form L, and the crystal form L has feature selected from the group below:
(1) X-ray powder diffraction pattern of the crystal form L includes 3 or 3 or more 2 θ values selected from the group below: 7.5 ± 0.2 °,
8.5±0.2°、14.0±0.2°、14.4±0.2°、14.6±0.2°、17.1±0.2°、18.2±0.2°、19.0±0.2°、
20.6±0.2°、21.4±0.2°、22.5±0.2°、22.8±0.2°、24.4±0.2°、26.3±0.2°、26.8±0.2°、
28.8±0.2°,30.5±0.2°,30.9±0.2°,31.2±0.2°,36.1±0.2°,38.4±0.2°;And/or
(2) X-ray powder diffraction pattern of the crystal form L is basic as Figure 41 is characterized;And/or
(3) the TGA figure of the crystal form L is basic as Figure 43 is characterized;And/or
(4) the DSC figure of the crystal form L has endothermic peak within the scope of 84~99 DEG C;And/or
(5) the DSC figure of the crystal form L is basic as Figure 42 is characterized;And/or
(6) the crystal form L purity is greater than 95%;And/or
The solvate is crystal form M, and the crystal form M has feature selected from the group below:
(1) X-ray powder diffraction pattern of the crystal form M includes 3 or 3 or more 2 θ values selected from the group below: 7.7 ± 0.2 °,
8.7±0.2°、11.1±0.2°、13.5±0.2°、14.0±0.2°、14.5±0.2°、17.7±0.2°、18.4±0.2°、
19.2±0.2°、20.6±0.2°、21.5±0.2°、22.1±0.2°、22.6±0.2°、23.0±0.2°、24.4±0.2°、
25.1±0.2°,26.4±0.2°,26.9±0.2°,29.0±0.2°;And/or
(2) X-ray powder diffraction pattern of the crystal form M is basic as Figure 44 is characterized;And/or
(3) the TGA figure of the crystal form M is basic as Figure 46 is characterized;And/or
(4) the DSC figure of the crystal form M has endothermic peak within the scope of 66~80 and 109~126 DEG C;And/or
(5) the DSC figure of the crystal form M is basic as Figure 45 is characterized;And/or
(6) the crystal form M purity is greater than 95%.
6. a kind of composition pesticide, the composition includes:
(a) such as solvate as claimed in any one of claims 1 to 5, and (b) acceptable carrier in Pesticide Science.
7. a kind of method for preparing crystal form B described in claim 1, comprising steps of
(i) compound of formula I is provided in the first solution of 2- butanone dissolved clarification;
(ii) normal heptane is added in the first solution of Xiang Shangshu, forms the second solution, and crystallization processing is carried out to the second solution, obtains
To crystal form B described in claim 1;And/or
A method of crystal form C described in claim 1 is prepared, comprising steps of
(i) compound of formula I is provided in the first solution of diethy-aceto oxalate dissolved clarification;
(ii) hexamethylene is added in the first solution of Xiang Shangshu, forms the second solution, and crystallization processing is carried out to the second solution, obtains
To crystal form C described in claim 1;And/or
A method of crystal form D described in claim 1 is prepared, comprising steps of
(i) compound of formula I is provided in the first solution of acetone dissolved clarification;
(ii) it volatilizees to the first solution, obtains crystal form D described in claim 1;And/or
A method of crystal form E described in claim 1 is prepared, comprising steps of
(i) compound of formula I is provided in the first solution of tetrahydrofuran dissolved clarification;
(ii) it volatilizees to the first solution, obtains crystal form E described in claim 1.
8. a kind of method for preparing crystal form F described in claim 1, comprising steps of
(i) compound of formula I is provided in the first solution of 2- methyltetrahydrofuran dissolved clarification;
(ii) it volatilizees to the first solution, obtains crystal form F described in claim 1;And/or
A method of crystal form G described in claim 1 is prepared, comprising steps of
(i) compound of formula I is provided in the first solution of butyl acetate dissolved clarification;
(ii) it volatilizees to the first solution, obtains crystal form G described in claim 1;And/or
A method of crystal form H described in claim 1 is prepared, comprising steps of
(i) compound of formula I is provided in the first solution of pyridine dissolved clarification;
(ii) hexamethylene is added in the first solution of Xiang Shangshu, forms the second solution, and crystallization processing is carried out to the second solution, obtains
To crystal form H described in claim 1;And/or
A method of crystal form I described in claim 1 is prepared, comprising steps of
(i) compound of formula I is provided in the first solution of propione dissolved clarification;
(ii) n-hexane is added in the first solution of Xiang Shangshu, forms the second solution, and crystallization processing is carried out to the second solution, obtains
To crystal form I described in claim 1.
9. a kind of method for preparing crystal form J described in claim 1, comprising steps of
(i) compound of formula I is provided in the first solution of 1,2- dichloroethanes dissolved clarification;
(ii) hexamethylene is added in the first solution of Xiang Shangshu, forms the second solution, and crystallization processing is carried out to the second solution, obtains
To crystal form J described in claim 1;And/or
A method of crystal form K described in claim 1 is prepared, comprising steps of
(i) compound of formula I is provided in the first solution of 1,4- dioxane dissolved clarification;
(ii) hexamethylene is added in the first solution of Xiang Shangshu, forms the second solution, and crystallization processing is carried out to the second solution, obtains
To crystal form K described in claim 1;And/or
A method of crystal form L described in claim 1 is prepared, comprising steps of
(i) compound of formula I is provided in the first solution of butyl acetate dissolved clarification;
(ii) n-hexane is added in the first solution of Xiang Shangshu, forms the second solution, and crystallization processing is carried out to the second solution, obtains
To crystal form L described in claim 1;And/or
A method of crystal form M described in claim 1 is prepared, comprising steps of
(i) compound of formula I is provided in the first solution of propione dissolved clarification;
(ii) n-hexane is added in the first solution of Xiang Shangshu, forms the second solution, and crystallization processing is carried out to the second solution, obtains
To crystal form M described in claim 1.
10. the purposes of a kind of solvate described in claim 1 or composition pesticide as claimed in claim 6, for preventing
Or control disease;Or for inhibiting harmful microorganism on agricultural, forestry or gardening.
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