CN109358814A - A kind of method of EEPROM storage - Google Patents
A kind of method of EEPROM storage Download PDFInfo
- Publication number
- CN109358814A CN109358814A CN201811210700.8A CN201811210700A CN109358814A CN 109358814 A CN109358814 A CN 109358814A CN 201811210700 A CN201811210700 A CN 201811210700A CN 109358814 A CN109358814 A CN 109358814A
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- China
- Prior art keywords
- block
- eeprom
- data
- written
- write
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/0614—Improving the reliability of storage systems
- G06F3/0616—Improving the reliability of storage systems in relation to life time, e.g. increasing Mean Time Between Failures [MTBF]
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0638—Organizing or formatting or addressing of data
- G06F3/064—Management of blocks
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Read Only Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
The invention discloses a kind of method of EEPROM storage, this method includes when writing data into each Block, judging the Block performance condition Step 1: EEPROM is divided into N number of Block；Step 2: reading storing data in EEPROM, the Block performance condition is judged；Step 3: circulation stores data and records data storage location in EEPROM.The beneficial effects of the present invention are: 1. uniformly use each Block in EEPROM, effectively extend the service life of EEPROM；2. using multiple Blook storing datas, a large amount of historical datas can be obtained.
Description
Technical field
The present invention relates to a kind of methods of EEPROM storage.
Background technique
EEPROM (Electrically Erasable Programmable Read-Only Memory), band are put erasable
Programable read only memory, the memory are the storaging chips that data are not lost after a kind of power down.EEPROM can be on computers
Or existing information is wiped on special equipment, it reprograms.
EEPROM (electrically erasable programmable read-only memory) be can user change read-only memory (ROM), can lead to
The effect higher than common voltage is crossed to wipe and reprogram (rewriting).Unlike EPROM chip, EEPROM is not required to take from computer
It can modify out.In an EEPROM, when computer can be reprogrammed continually when in use, the service life of EEPROM
It is that a critically important design considers parameter.A kind of special shape of EEPROM is flash memory, and application is usually in PC
Voltage come it is erasable and reprogramming.Due to the restricted lifetime of EEPROM, same position is used for a long time and is wiped and is written and can made
At EEPROM using insufficient, waste of resource while, also shortens the service life of EEPROM.
Summary of the invention
The purpose of the present invention is to overcome the disadvantages of the prior art, provides a kind of the same of the resource for making full use of EEPROM
When, the data being written before also guaranteeing keep effectively, the EEPROM of the reading data when comparison and diagnosis of data being facilitated to store
Method.
The present invention relates to a kind of methods of EEPROM storage, comprising the following steps:
Step 1: EEPROM is divided into N number of Block, when writing data into each Block, the Block performance shape is judged
Condition:
(1) data write-in is carried out in the different Block of EEPROM every time, after writing data into a Block of EEPROM
Again it reads out and compares, if write-in is consistent with data comparison is read, determine that data are written to function, and will be written successful
The mark position Block 1；Otherwise next step is carried out；
(2) data are written to the Block in EEPROM again, are repeated step (1), if repeating step (1) twice, are write
Enter and to read data still inconsistent, then determines write-in failure；
(3) Block for the EEPROM that record breaks down, this is skipped when next time is written in mark position 0 automatically
Block selects other Block to be written；
Step 2: reading storing data in EEPROM, the Block performance condition is judged:
(1) it when reading storing data in EEPROM, first determines whether that successful flag bit is written in Block, if the mark
Position is 0, then determines that last time is written not successfully, the numerical value of reading is without reference value；
(2) if the flag bit is 1, determine that the last time data of deposit are effective, be to read-out data value range
It is no rationally to be judged, determine to read successfully if rationally if value range；
(3) if value range be determined as it is unreasonable if repeatedly read, three times after it is still failed, then determine to read and lose
It loses；
(4) Block to break down is recorded, mark position 0, next time does not use；
Step 3: circulation stores data and records data storage location in EEPROM:
(1) when data are written to the Block of EEPROM, the flag bit of the Block is first determined whether, if flag bit is 1,
Data are written in the Block and are sequentially recorded the position Block of storage；Wherein to the Block of EEPROM write-in data
Process are as follows:
(a) by data for the first time write-in EEPROM it when, selects x-th of Block in EEPROM to be written, writes for the second time
Fashionable selection (x+1)th Block is written, and selection+2 Block of xth are written when third time is written, and is sequentially written in straight
To writing N number of Blook；
(b) after writing n-th Blook, in write-in next time successively select first Blook, second Blook until
- 1 Blook of xth is written；
(c) repeat step (a) be written since x-th of Blook again, then repeatedly step (b)-(c) so recycle into
Row；
(2) as needed, the position Block according to record, finds corresponding Block, then reads in the Block and deposit
The data of storage.
The beneficial effects of the present invention are:
1. uniformly effectively extending the service life of EEPROM using each Block in EEPROM；
2. using multiple Blook storing datas, a large amount of historical datas can be obtained.
Detailed description of the invention
Fig. 1 is EEPROM write-in process；
Fig. 2 is that EEPROM reads process.
Specific embodiment
The present invention is described in detail in the following with reference to the drawings and specific embodiments:
The present invention relates to a kind of methods of EEPROM storage as shown in the picture, comprising the following steps:
Step 1: EEPROM is divided into N number of Block, when writing data into each Block, the Block performance shape is judged
Condition:
(1) data write-in is carried out in the different Block of EEPROM every time, after writing data into a Block of EEPROM
Again it reads out and compares, if write-in is consistent with data comparison is read, determine that data are written to function, and will be written successful
The mark position Block 1；Otherwise next step is carried out；
(2) data are written to the Block in EEPROM again, are repeated step (1), if repeating step (1) twice, are write
Enter and to read data still inconsistent, then determines write-in failure.
(3) Block for the EEPROM that record breaks down, this is skipped when next time is written in mark position 0 automatically
Block selects other Block to be written.
Step 2: reading storing data in EEPROM, the Block performance condition is judged:
(1) it when reading storing data in EEPROM, first determines whether that successful flag bit is written in Block, if the mark
Position is 0, then determines that last time is written not successfully, the numerical value of reading is without reference value；
(2) if the flag bit is 1, determine that the last time data of deposit are effective, be to read-out data value range
It is no rationally to be judged, determine to read successfully if rationally if value range；
(3) if value range be determined as it is unreasonable if repeatedly read, three times after it is still failed, then determine to read and lose
It loses；
(4) Block to break down is recorded, mark position 0, next time does not use.
Step 3: circulation stores data and records data storage location in EEPROM:
(1) when data are written to the Block of EEPROM, the flag bit of the Block is first determined whether, if flag bit is 1,
Data are written in the Block and are sequentially recorded the position Block of storage；Wherein to the Block of EEPROM write-in data
Process are as follows:
(a) by data for the first time write-in EEPROM it when, selects x-th of Block in EEPROM to be written, writes for the second time
Fashionable selection (x+1)th Block is written, and selection+2 Block of xth are written when third time is written, and is sequentially written in straight
To writing N number of Blook；
(b) after writing n-th Blook, in write-in next time successively select first Blook, second Blook until
- 1 Blook of xth is written；
(c) repeat step (a) be written since x-th of Blook again, then repeatedly step (b)-(c) so recycle into
Row.
(2) as needed (such as: when generation special circumstances, such as when failure), it according to the position Block of record, finds
Then corresponding Block reads the data stored in the Block.
Claims (1)
1. a kind of method of EEPROM storage, it is characterised in that the following steps are included:
Step 1: EEPROM is divided into N number of Block, when writing data into each Block, the Block performance condition is judged:
(1) data write-in is carried out in the different Block of EEPROM every time, write data into after a Block of EEPROM again
It reads out and compares, if write-in is consistent with data comparison is read, determine that data are written to function, and will be written successful
The mark position Block 1；Otherwise next step is carried out；
(2) data are written to the Block in EEPROM again, repeat step (1), if repeating step (1) twice, write-in and
It is still inconsistent to read data, then determines write-in failure；
(3) this Block choosing is skipped in the Block for the EEPROM that record breaks down, mark position 0 automatically when next time is written
Other Block are selected to be written；
Step 2: reading storing data in EEPROM, the Block performance condition is judged:
(1) it when reading storing data in EEPROM, first determines whether that successful flag bit is written in Block, if the flag bit is
0, then determine that last time is written not successfully, the numerical value of reading is without reference value；
(2) if the flag bit is 1, determine that the last time data of deposit are effective, whether read-out data value range is closed
Reason is judged, determines to read successfully if rationally if value range；
(3) if value range be determined as it is unreasonable if repeatedly read, three times after it is still failed, then determine to read failure；
(4) Block to break down is recorded, mark position 0, next time does not use；
Step 3: circulation stores data and records data storage location in EEPROM:
(1) when data are written to the Block of EEPROM, the flag bit of the Block is first determined whether, if flag bit is 1, at this
Data are written in Block and are sequentially recorded the position Block of storage；Wherein to the process of the Block of EEPROM write-in data
Are as follows:
(a) by data for the first time write-in EEPROM when, x-th of Block in EEPROM is selected to be written, when being written for the second time
Selection (x+1)th Block is written, and selection+2 Block of xth are written when third time is written, and is sequentially written in until writing
Complete N number of Blook；
(b) after writing n-th Blook, first Blook, second Blook are successively selected in write-in next time until write-in
- 1 Blook of xth；
(c) it repeats step (a) to be written since x-th of Blook again, then repeatedly step (b)-(c) so circulation carries out；
(2) as needed, the position Block according to record, finds corresponding Block, then reads and stores in the Block
Data.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811210700.8A CN109358814A (en) | 2018-10-17 | 2018-10-17 | A kind of method of EEPROM storage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811210700.8A CN109358814A (en) | 2018-10-17 | 2018-10-17 | A kind of method of EEPROM storage |
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| Publication Number | Publication Date |
|---|---|
| CN109358814A true CN109358814A (en) | 2019-02-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811210700.8A Pending CN109358814A (en) | 2018-10-17 | 2018-10-17 | A kind of method of EEPROM storage |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112527207A (en) * | 2020-12-18 | 2021-03-19 | 深圳市元征科技股份有限公司 | Method and device for storing data in EEPROM |
| CN114115743A (en) * | 2021-11-29 | 2022-03-01 | 苏州迅镭激光科技有限公司 | Method for prolonging service life of data storage chip |
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| CN1804908A (en) * | 2006-01-18 | 2006-07-19 | 成都前锋电子电器集团股份有限公司 | Data storage system for tax controlled cash register |
| CN204184284U (en) * | 2014-11-08 | 2015-03-04 | 天津易众腾动力技术有限公司 | A kind of vehicle control unit of electric vehicle with memory device and wireless communication module |
| CN105843749A (en) * | 2016-03-24 | 2016-08-10 | 浙江大学 | NAND Flash fault-tolerance method based on FPGA (Field Programmable Gate Array) |
| US20170046090A1 (en) * | 2015-08-13 | 2017-02-16 | Texas Instruments Incorporated | Wom code emulation of eeprom-type devices |
| CN106933495A (en) * | 2015-12-30 | 2017-07-07 | 华为技术有限公司 | A kind of method for reading data, RAID controller and storage device |
| CN107797765A (en) * | 2017-09-26 | 2018-03-13 | 昆明理工大学 | A kind of method for extending electric erasable memory element service life |
| CN107908366A (en) * | 2017-11-14 | 2018-04-13 | 郑州云海信息技术有限公司 | A kind of intelligent data access method, apparatus and equipment |
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2018
- 2018-10-17 CN CN201811210700.8A patent/CN109358814A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1804908A (en) * | 2006-01-18 | 2006-07-19 | 成都前锋电子电器集团股份有限公司 | Data storage system for tax controlled cash register |
| CN204184284U (en) * | 2014-11-08 | 2015-03-04 | 天津易众腾动力技术有限公司 | A kind of vehicle control unit of electric vehicle with memory device and wireless communication module |
| US20170046090A1 (en) * | 2015-08-13 | 2017-02-16 | Texas Instruments Incorporated | Wom code emulation of eeprom-type devices |
| CN106933495A (en) * | 2015-12-30 | 2017-07-07 | 华为技术有限公司 | A kind of method for reading data, RAID controller and storage device |
| CN105843749A (en) * | 2016-03-24 | 2016-08-10 | 浙江大学 | NAND Flash fault-tolerance method based on FPGA (Field Programmable Gate Array) |
| CN107797765A (en) * | 2017-09-26 | 2018-03-13 | 昆明理工大学 | A kind of method for extending electric erasable memory element service life |
| CN107908366A (en) * | 2017-11-14 | 2018-04-13 | 郑州云海信息技术有限公司 | A kind of intelligent data access method, apparatus and equipment |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112527207A (en) * | 2020-12-18 | 2021-03-19 | 深圳市元征科技股份有限公司 | Method and device for storing data in EEPROM |
| CN114115743A (en) * | 2021-11-29 | 2022-03-01 | 苏州迅镭激光科技有限公司 | Method for prolonging service life of data storage chip |
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Application publication date: 20190219 |