CN109341554A - A kind of device and method measuring film thickness - Google Patents
A kind of device and method measuring film thickness Download PDFInfo
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- CN109341554A CN109341554A CN201811583928.1A CN201811583928A CN109341554A CN 109341554 A CN109341554 A CN 109341554A CN 201811583928 A CN201811583928 A CN 201811583928A CN 109341554 A CN109341554 A CN 109341554A
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- linear beam
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
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Abstract
The invention discloses a kind of device and methods for measuring film thickness, the light beam that the light source issues forms linear beam by the beam shaping, the linear beam successively enters the film layer of crystal column surface by the fixed polarizer and the rotation polarizer, and reflection and refraction occur in the film layer of crystal column surface, linear beam enters the focus grating unit after film layer reflection, linear beam dispersion after reflection is two-dimension spectrum by the focus grating unit, the two-dimension spectrum enters described image sensor by the analyzer, obtain the two-dimension spectrum image about light intensity signal, the thicknesses of layers of crystal column surface corresponding position is obtained according to the light intensity signal on the two-dimension spectrum image.A kind of device and method for measuring film thickness, can measure the reflection signal of multiple points simultaneously, can improve the mechanical movement in measuring speed and measurement process in the present invention.
Description
Technical field
The present invention relates to film layer detection fields, and in particular to a kind of device and method for measuring film thickness.
Background technique
The measurement of film thickness be it is essential in investigation of materials and IC manufacturing, especially in integrated circuit
In manufacturing process, the coating of photoresist, the growth of film, the test of etching etc., it is necessary to after accurately measuring each process
The film shape of silicon chip surface.It, usually need to be each in the direction x and y in order to detect the Painting effect of photoresist by taking 12 cun of silicon wafers as an example
25 points are measured, to embody distribution of the photoresist on full wafer silicon wafer.
Ellipsometric measurement method is most important Thin film parameter measurement technology.The technology is reflected by measuring through testee
The intensity of the polarization state of light and phase change (i.e. ellipsometric parameter Ψ and Δ) afterwards, thickness and refractive index etc. to obtain sample are believed
Breath.
Ellipsometric parameter Ψ and Δ are not the physical quantity directly measured, but need the real-time measurement in modulating polarization state
The intensity I of reflected light, then ellipsometric parameter Ψ and Δ are obtained after Fourier transform by the intensity relationship that changes with time, it is final logical
It crosses the quasi- the Fitting Calculation of modeling and goes out corresponding thickness and refractive index.Since mathematical operation can be completed offline, for equipment, warp
Reflected intensity I under each wavelength of polarization state modulation is most directly to measure physical quantity.
The measurement method of mainstream is to carry out spot measurement using ellipsometer at present, is taken a long time when measurement point is more, and
It is every to have surveyed a point and require mechanical movement, it is unfavorable for the control of precision.Therefore it is next disposable to need to find a kind of new method
The reflection signal of multiple points is measured, while also to facilitate the collection and processing of data.
Summary of the invention
The object of the present invention is to provide a kind of device and methods for measuring film thickness, can measure the reflection letter of multiple points simultaneously
Number, the mechanical movement in measuring speed and measurement process can be improved.
To achieve the goals above, the present invention adopts the following technical scheme: it is a kind of measure film thickness device, for measuring position
In the thicknesses of layers of n tested point on crystal column surface straight line；Broad spectrum light source, beam shaping including emitting light beam
Device, the fixed polarizer, the rotation polarizer, focus grating unit, analyzer and imaging sensor；
The light beam that the broad spectrum light source issues forms linear beam by the beam shaping, and the linear beam covers
All tested points are covered, the linear beam successively enters the film of crystal column surface by the fixed polarizer and the rotation polarizer
Layer, and reflected in the film layer of crystal column surface, linear beam enters the focus grating unit after film layer reflection,
Linear beam dispersion after reflection is two-dimension spectrum by the focus grating unit, and dispersion direction and the linear beam institute
Orthogonal in the direction of straight line, the two-dimension spectrum enters described image sensor by the analyzer, obtains believing about light intensity
Number two-dimension spectrum image, the orthogonal both direction of the two-dimension spectrum image respectively corresponds the linear beam and is incident on wafer
The wavelength of position and the position incident light in superficial film；Wafer is obtained according to the light intensity signal on the two-dimension spectrum image
The film layer of surface corresponding position is thick, wherein n is the integer degree more than or equal to 1.
Further, the focus grating unit includes grating and Focused Optical system, and linear beam is reflected by film layer
Enter the grating later, the linear beam dispersion after reflection is two-dimension spectrum by the grating, and the two-dimension spectrum is successively
Enter described image sensor by the Focused Optical system and analyzer.
Further, the grating is one-dimensional grating, and the groove direction of the grating is along the y axis, the grating
The groove period is along the x axis；The direction of straight line where the linear beam is Y direction.
Further, dispersion occurs on the one-dimensional grating for the linear beam, and dispersion direction is X-direction, shape
At two-dimension spectrum；Wherein, the corresponding position for indicating linear beam and being incident on crystal column surface film layer of Y direction in two-dimension spectrum, two
X-direction corresponds to the wavelength that the position corresponds to incident light in dimension spectrum.
Further, the grating is reflective balzed grating, and largest light intensity is+1 level or -1 level.
Further, the Focused Optical system is concave mirror or convex lens, for two-dimension spectrum to be converged to the figure
As in sensor.
Further, the focus grating unit is the grating for being engraved in concave mirror surface.
Further, the incidence angle of the linear beam to crystal column surface film layer is 60-75 °.
A kind of method carrying out film thickness measuring provided by the invention, includes the following steps:
S01: n tested point being located in a straight line is set on the wafer surface, wherein n is whole more than or equal to 1
Number；
S02: opening light source, and the light beam that broad spectrum light source issues forms linear beam, the threadiness by beam shaping
Light beam covers all tested points, and linear beam successively enters the film layer of crystal column surface by the fixed polarizer and the rotation polarizer,
And reflection and refraction occur in the film layer of crystal column surface, linear beam enters focus grating unit after film layer reflection,
And the linear beam dispersion after reflection is two-dimension spectrum by the focus grating unit, and linear beam covering is needed
Measuring point, dispersion direction is orthogonal with the direction of the linear beam, and the two-dimension spectrum enters described image by the analyzer
Sensor obtains the two-dimension spectrum image about light intensity signal；The orthogonal both direction of the two-dimension spectrum image respectively corresponds
The linear beam is incident on the wavelength of position and the position incident light in crystal column surface film layer；
S03: Fourier transformation is made to the light intensity signal on each position in two-dimension spectrum image, and is fitted by modeling
To the thicknesses of layers of n tested point
The invention has the benefit that crystal column surface is located in a straight line different measurement point and each survey in the present invention
The respective spectral information of amount point is unfolded in 2 orthogonal directions, i.e., the signal light of Y-direction spreads out in grating surface generation X-direction
It penetrates, to form two-dimentional light intensity spectrum in X/Y plane.The two dimension light intensity is composed finally by image recording sensor, according to each position
Light intensity signal, the thicknesses of layers of different measurement points can be calculated, the present invention only needs one-shot measurement and mechanical movement
Obtain the film thickness of multiple measurement points.
Detailed description of the invention
Attached drawing 1 is a kind of schematic device for measuring film thickness of the present invention.
In figure: 1 wafer, 2 light sources, 3 beam shapings, the 4 fixed polarizers, the 5 rotation polarizers, 6 gratings, 7 two-dimension spectrums,
8 Focused Optical systems, 9 analyzers, 10 imaging sensors.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, with reference to the accompanying drawing to specific reality of the invention
The mode of applying is described in further detail.
As shown in Fig. 1, a kind of device measuring film thickness provided by the invention, for measuring the thickness of crystal column surface film layer
Degree；Broad spectrum light source 2, beam shaping 3, the fixed polarizer 4, the rotation polarizer 5, focus grating list including emitting light beam
Member, analyzer 9 and imaging sensor 10.The angle pencil of ray that light source 2 issues forms linear beam, Line of light by beam shaping 3
Shu Yici enters the film layer on 1 surface of wafer by the fixed polarizer 4 and the rotation polarizer 5, and sends out in the film layer of crystal column surface
Raw reflection and refraction, linear beam enters focus grating unit after film layer reflection, after focus grating unit will reflect
Linear beam dispersion be two-dimension spectrum 7, and the direction of straight line where dispersion direction and linear beam is orthogonal, two-dimension spectrum process
Analyzer 9 enters imaging sensor 10, obtains the two-dimension spectrum image about light intensity signal, orthogonal two of two-dimension spectrum image
Direction respectively corresponds the wavelength that the position that linear beam is incident in crystal column surface film layer corresponds to incident light with the position；According to two
Light intensity signal on dimension spectrum picture obtains the thicknesses of layers of crystal column surface corresponding position.
The spectral region for the light beam that broad spectrum light source emits in the present invention at least covers 400nm-800nm, typically, such as xenon
The gas lamps such as lamp.Broad spectrum light source refers to that light source covers wider spectral region.The light beam warp of broad spectrum light source transmitting
Crossing beam shaping becomes linear beam, and the fixation polarizer in front of linear beam is arranged in and the rotation polarizer is visited for controlling
Survey the polarization state of light.Crystal column surface tested point is located in a straight line in the present invention, and linear beam covers all tested points, and
The incidence angle of light beam to crystal column surface film layer is 60-75 °.
Focus grating unit can include grating 6 and Focused Optical system 8 for separated in the present invention, as shown in Fig. 1,
Grating directly can be engraved in concave mirror surface, while play the function of grating and Focused Optical system,
When including grating and Focused Optical system in the present invention, linear beam is after film layer reflection into grating 6, light
Linear beam dispersion after reflection is two spectrum 7 by grid 6, and two-dimension spectrum successively passes through Focused Optical system and analyzer enters
Imaging sensor.Grating is one-dimensional grating, and the groove direction of grating is Y direction, and the groove period of grating is along the x axis；
The direction of linear beam corresponds to Y direction.Dispersion occurs on one-dimensional grating for linear beam, and dispersion direction is X-direction, shape
At two-dimension spectrum；Wherein, Y direction corresponds to the position that linear beam is incident on crystal column surface film layer, two-dimentional light in two-dimension spectrum
X-direction corresponds to the wavelength of the position incident light in spectrum.Referring specifically to attached drawing 1, the length of grating in the Y-axis direction must be big
Length P between all tested points1-Pn, tested point P1-PnTransmitting light on line segment passes through after 6 diffraction of grating, in X-axis side
The clear zone that upward dispersion ,+1 level or -1 level are formed is two-dimension spectrum 7, represents the light intensity point in tested point X/Y plane
Cloth.Measurement point P1Reflected light after 6 diffraction of grating ,+1 level or -1 level after dispersion are the upper left corner of two-dimension spectrum 7
To the line segment in the upper right corner；Measurement point PnReflected light after 6 diffraction of grating ,+1 level or -1 level after dispersion are two-dimentional light
Line segment of the lower left corner of spectrum 7 to the lower right corner.Therefore the intensity of each position of two-dimension spectrum 7 is I (x, y), the direction x corresponding wavelength
λi, the direction y corresponds to measurement point Pj.Wherein, n indicates n tested point, and j indicates j-th of tested point, and n is whole more than or equal to 2
Number, j are the integer less than or equal to n.
Grating can be reflective balzed grating, in the present invention, and largest light intensity is+1 level or -1 level.Focus optics
System is concave mirror or convex lens, for converging to two-dimension spectrum in imaging sensor.Imaging sensor is also two dimensional image
Sensor, received two dimensional image spectrum is corresponding with the two-dimension spectrum after grating scattering, and the two-dimension spectrum needs
The necessary wavelength information after grating scattering is showed completely, i.e. the pixel number of two dimensional image spectrum in the Y-axis direction is big
In the number for being equal to crystal column surface tested point, pixel number in the X-axis direction is more than or equal to the spectral region of required measurement, required
The spectral region of measurement refers to that data are fitted the difference of necessary maximum wavelength and minimum wavelength.
When raster unit burnt in the present invention is to be engraved in the grating on concave mirror surface, the specific requirement of grating is the same as described above
It is almost the same, grating and Focused Optical system are only combined to the scattering and focusing for carrying out linear beam, do not done herein in detail
It describes in detail bright.
A kind of method measuring film thickness provided by the invention, includes the following steps:
S01: n tested point being located in a straight line is set on the wafer surface；
S02: opening broad spectrum light source, and the light beam that light source issues forms linear beam, linear beam by beam shaping
Successively enter the film layer of crystal column surface by the fixed polarizer and the rotation polarizer, and is reflected in the film layer of crystal column surface
And refraction, linear beam enters focus grating unit after film layer reflection, and focus grating unit is by the line after reflection
Shape light beam dispersion is two-dimension spectrum, and linear beam covers all tested points, and dispersion direction is orthogonal with the direction of linear beam, single
Coloured light enters imaging sensor by analyzer, obtains the two-dimension spectrum image about light intensity signal；Wherein, the side of linear beam
The direction of straight line to where referring to linear beam；The orthogonal both direction of two-dimension spectrum image respectively corresponds linear beam incidence
The wavelength of position and the position incident light into crystal column surface film layer；
S03: Fourier transformation is made to the light intensity signal on each position in two-dimension spectrum image, and is fitted by modeling
To the thicknesses of layers of n tested point.
The intensity I (x, y) of each position in two-dimension spectrum image, X-direction corresponding wavelength λi, Y-direction corresponds to measurement point
Pj.Therefore the light intensity signal I and initial beam intensity I detected0Between relationship be I (x, y)=I0f[λi,Pj,ωt,n(λi),k
(λi), d], wherein λiFor wavelength, PjFor j-th of measurement point, ω t indicates the modulation of polarization state, n (λi) be the wavelength under refraction
Rate, k (λi) be the wavelength under extinction coefficient, d be the measurement point film thickness.Fourier transformation is done to it, ellipse inclined ginseng can be obtained
Number Ψ and Δ, establish film layer structure model and dispersive model to tested wafer, utilize the polarization of each measurement point of the models fitting
The intensity and phase change of state, i.e. ellipsometric parameter Ψ and Δ, can be obtained corresponding film thickness.
It is worth noting that measurement point and the respective spectral information of each measurement point different on straight line in the present invention
It is unfolded in 2 orthogonal directions, i.e., in grating surface X-direction diffraction occurs for the signal light of Y-direction, and two are formed in X/Y plane
Tie up spectrum.Simple switched X and Y coordinates axis, it should also fall within institute's protection scope of the present invention.
The above description is only a preferred embodiment of the present invention, and the embodiment is not intended to limit patent protection of the invention
Range, thus it is all with the variation of equivalent structure made by specification and accompanying drawing content of the invention, it similarly should be included in this
In the protection scope of invention appended claims.
Claims (9)
1. a kind of device for measuring film thickness, for measuring the thicknesses of layers for n tested point being located on crystal column surface straight line；
It is characterised in that it includes the broad spectrum light source of transmitting light beam, beam shaping, the fixed polarizer, the rotation polarizer, focus grating
Unit, analyzer and imaging sensor；
The light beam that the broad spectrum light source issues forms linear beam by the beam shaping, and the linear beam covers institute
There is tested point, the linear beam successively enters the film layer of crystal column surface by the fixed polarizer and the rotation polarizer, and
Reflection and refraction occur in the film layer of crystal column surface, linear beam enters the focus grating list after film layer reflection
Member, the linear beam dispersion after reflection is two-dimension spectrum by the focus grating unit, and dispersion direction and the Line of light
The direction of straight line is orthogonal where beam, and the monochromatic light enters described image sensor by the analyzer, obtains about light intensity
The two-dimension spectrum image of signal, the orthogonal both direction of the two-dimension spectrum image respectively correspond the linear beam and are incident on crystalline substance
The wavelength of position and the position incident light in circular surfaces film layer；Crystalline substance is obtained according to the light intensity signal on the two-dimension spectrum image
The thicknesses of layers of circular surfaces corresponding position, wherein n is the integer more than or equal to 1.
2. a kind of device for measuring film thickness according to claim 1, which is characterized in that the focus grating unit includes light
Grid and Focused Optical system, linear beam enter the grating after film layer reflection, and the grating is by the line after reflection
Shape light beam dispersion is two-dimension spectrum, and the two-dimension spectrum successively enters described image by the Focused Optical system and analyzer
Sensor.
3. a kind of device for measuring film thickness according to claim 2, which is characterized in that the grating is one-dimensional grating, and
Along the y axis, the groove period of the grating is along the x axis in the groove direction of the grating；Straight line where the linear beam
Direction be Y direction.
4. a kind of device for measuring film thickness according to claim 3, which is characterized in that the linear beam is described one-dimensional
Dispersion occurs on grating, and dispersion direction is X-direction, forms two-dimension spectrum；Wherein, Y direction corresponds to line in two-dimension spectrum
Shape light beam is incident on the position of crystal column surface film layer, and X-direction corresponds to the wavelength of the position incident light in two-dimension spectrum.
5. a kind of device for measuring film thickness according to claim 3, which is characterized in that the grating is reflective glares
Grid, largest light intensity are+1 level or -1 level.
6. a kind of device for measuring film thickness according to claim 2, which is characterized in that the Focused Optical system is concave surface
Mirror or convex lens.
7. a kind of device for measuring film thickness according to claim 1, which is characterized in that the focus grating unit is to be engraved in
The grating on concave mirror surface.
8. a kind of device for measuring film thickness according to claim 1, which is characterized in that the linear beam to crystal column surface
The incidence angle of film layer is 60-75 °.
9. a method of film thickness measuring is carried out using device described in claim 1, which comprises the steps of:
S01: n tested point being located in a straight line is set on the wafer surface, wherein n is the integer more than or equal to 1；
S02: opening broad spectrum light source, and the light beam that light source issues forms linear beam, the linear beam by beam shaping
All tested points are covered, linear beam successively passes through the fixed polarizer and rotates the film layer that the polarizer enters crystal column surface, and
Reflection and refraction occur in the film layer of crystal column surface, linear beam enters focus grating unit, and institute after film layer reflection
It is two-dimension spectrum that focus grating unit, which is stated, by the linear beam dispersion after reflection, and linear beam covering is all to be measured
Point, dispersion direction is orthogonal with the direction of the linear beam, and the monochromatic light enters described image sensing by the analyzer
Device obtains the two-dimension spectrum image about light intensity signal；The orthogonal both direction of the two-dimension spectrum image respectively corresponds described
Linear beam is incident on the wavelength of position and the position incident light in crystal column surface film layer；
S03: Fourier transformation is made to the light intensity signal on each position in two-dimension spectrum image, and obtains n by modeling fitting
The thicknesses of layers of a tested point.
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| CN112729133A (en) * | 2020-12-18 | 2021-04-30 | 广东省大湾区集成电路与系统应用研究院 | Method and device for measuring film thickness based on diffraction intensity of detection grating |
| CN113945157A (en) * | 2021-10-15 | 2022-01-18 | 长鑫存储技术有限公司 | Film thickness testing device |
| CN117268270A (en) * | 2023-11-23 | 2023-12-22 | 中国航发北京航空材料研究院 | Real-time monitoring device and method for continuous chemical vapor deposition interface layer thickness |
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| CN117268270B (en) * | 2023-11-23 | 2024-02-06 | 中国航发北京航空材料研究院 | Real-time monitoring device and method for continuous chemical vapor deposition interface layer thickness |
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