CN109327194A - A kind of one chip low-noise amplifier of the broadband High Linear with bypass functionality - Google Patents
A kind of one chip low-noise amplifier of the broadband High Linear with bypass functionality Download PDFInfo
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- CN109327194A CN109327194A CN201811039160.1A CN201811039160A CN109327194A CN 109327194 A CN109327194 A CN 109327194A CN 201811039160 A CN201811039160 A CN 201811039160A CN 109327194 A CN109327194 A CN 109327194A
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
- H03F1/48—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
- H03F1/486—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers with IC amplifier blocks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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Abstract
A kind of one chip low-noise amplifier the present invention relates to broadband High Linear with bypass functionality, including a low-noise amplifier, tandem tap, paralleling switch, A control circuit, B control circuit, wherein tandem tap input terminal is serially connected in low-noise amplifier output end, output end is in parallel with paralleling switch output end, paralleling switch input terminal is in parallel with low-noise amplifier input terminal, A control circuit and low-noise amplifier, tandem tap are connected in series, and B control circuit and low-noise amplifier, paralleling switch are connected in series.Advantage: 1) low-noise amplifier uses cascode structure, obtains higher gain using smaller current when low-noise amplifier being made to work, while guaranteeing the lower noise coefficient of device, obtains biggish bandwidth of operation.2) GaAs E/D pHEMT technique is used, the units such as low-noise amplifier, tandem tap, paralleling switch, control circuit are fully integrated in the realization of single IC chip, the Linear Amplifer of signal is realized within the scope of wider applying frequency.
Description
Technical field
The present invention is a kind of one chip low-noise amplifier of the broadband High Linear with bypass functionality, belongs to wireless communication technique
Field.
Background technique
Mobile communication technology develops rapidly now, and as 5G communicates all standard gradual perfection, 5G communication era is also flying
Speed is come up to us, requires also to become higher and higher to the promotion of mobile communication rate.Certain crowded type places of large size are such as
Gymnasium, megastore, airport etc., since its construction area is big, building is strong to the shielding of signal, localized network signal is close
Collection will lead to the cause specifics such as signal jam, improve indoor mobile communication environment frequently with indoor distributed system, as to biography
The supplement of system base station architecture, to guarantee that indoor each region has good signal to cover.
Indoor distributed system is broadly divided into passive compartment system and active two class of compartment system, field biggish for area
Institute, frequently with active compartment system.Low-noise amplifier built in active compartment system, for thermal compensation signal in transmission process
Loss.When its area of coverage intra domain user is less, when signal is weaker, amplifier is started to work, and signal is amplified, and obtains user good
Good signal；When its area of coverage intra domain user is more, when signal strength is larger, to prevent signal jam, amplifier shutdown, letter
Number from other channels bypass, to guarantee the mobile communication equipment normal use of user.Since mobile communication application is to signal quality
Particular/special requirement, therefore to the amplifier also proposed low noise, High Linear, high-gain, low-power consumption, multi-operation mode, it is low at
The particular/special requirements such as this.Summary of the invention
Proposed by the present invention is a kind of one chip low-noise amplifier of the broadband High Linear with bypass functionality, and its object is to be directed to
The prior art requires low-noise amplifier to accomplish the spies such as low noise, High Linear, high-gain, low-power consumption, multi-operation mode, low cost
Different to require, the multiple functions such as radiofrequency signal amplification, radiofrequency signal bypass, radiofrequency signal shutdown can be completed at the same time by proposing one kind
One chip low-noise amplifier of the broadband High Linear with bypass functionality.
Technical solution of the invention: a kind of one chip low-noise amplifier of the broadband High Linear with bypass functionality, packet
A low-noise amplifier, tandem tap, paralleling switch, A control circuit, B control circuit are included, wherein tandem tap input terminal string
It connects in low-noise amplifier output end, output end is in parallel with paralleling switch output end, paralleling switch input terminal and low noise amplification
Device input terminal is in parallel, and A control circuit and low-noise amplifier, tandem tap are connected in series, B control circuit and low noise amplification
Device, paralleling switch are connected in series.
Beneficial effects of the present invention:
1) low-noise amplifier has used cascode structure, and lesser work is utilized when on the one hand low-noise amplifier being made to work
Electric current obtains higher gain and guarantees the lower noise coefficient of device simultaneously, on the other hand obtains biggish bandwidth of operation.
2) GaAs E/D pHEMT technique is used, by low-noise amplifier, tandem tap, paralleling switch, control circuit etc.
Unit is fully integrated to be realized in single IC chip, and the Linear Amplifer of signal can be realized within the scope of wider applying frequency.
3) it can work, and possess in bandwidth of operation higher linear under various states in wider frequency band
Degree, meets 2G/3G/5G sub-6GHz/2.5GHz WLAN mobile communication application demand.
Detailed description of the invention
Attached drawing 1 is the classical low-noise amplifier block diagram with bypass functionality.
Attached drawing 2 is classical cascade amplifier schematic diagram.
Attached drawing 3 is classical common source and common grid amplifier schematic diagram.
Attached drawing 4 is one chip low-noise amplifier block diagram of the broadband High Linear with bypass functionality.
Attached drawing 5 is the control circuit block diagram of one chip low-noise amplifier of the broadband High Linear with bypass functionality.
Attached drawing 6 is low-noise amplifier access schematic diagram.
Attached drawing 7 is paralleling switch access schematic diagram.
Attached drawing 8 is S21 and OIP3 simulation curve of the low-noise amplifier under amplification and bypass condition.
1 it is low-noise amplifier in figure, 2 be tandem tap, 3 is that paralleling switch, 4 and 5 are control circuits, 6 are voltage ratios
It is source follower compared with device, 7,8 is phase inverter.Q1, Q2, Q3 are transistors.
Specific embodiment
A kind of one chip low-noise amplifier of the broadband High Linear with bypass functionality, including a low-noise amplifier, string
Join switch, paralleling switch, A control circuit, B control circuit, wherein tandem tap input terminal is serially connected in low-noise amplifier output
End, output end is in parallel with paralleling switch output end, and paralleling switch input terminal is in parallel with low-noise amplifier input terminal, A control electricity
Road and low-noise amplifier, tandem tap are connected in series, and B control circuit and low-noise amplifier, paralleling switch are connected in series.
The A control circuit, B control circuit structure are identical, including voltage comparator, source follower and multiple paraphase
Device, voltage comparator, source follower and several phase inverters are connected in series, voltage comparator by input voltage and reference voltage into
Row compare, then export high potential higher than reference voltage, then export low potential lower than reference voltage, source follower to buffer,
Voltage comparator driving capability is improved to export different control voltage finally by multiple phase inverter paraphase and control circuit
System.
The low-noise amplifier includes Q1 transistor, Q2 transistor and Q3 transistor, using cascode structure, common source
Grade Q1 transistor source concatenates Q3 transistor to ground, further controls Q3 crystal by control A control circuit and B control circuit
Tube grid voltage controls the working condition of low-noise amplifier, and when Q3 transistor gate voltage is greater than 0.6V, Q3 transistor is opened
It opens, low-noise amplifier works normally, and when Q3 transistor gate voltage is lower than 0.3V, Q3 transistor is turned off, low-noise amplifier
Shutdown, and amplifier common-source stage Q1 transistor input impedance is in high-impedance state, it can be on the basis for not influencing amplifier status performance
On avoid amplifier when turning off because Q1 transistor gate voltage variation caused by parasitic parameter change, to avoid paralleling switch 3
The linearity deteriorate；It connects in series switch in low-noise amplifier output end, output end voltage changes when preventing amplifier from turning off
Caused parasitic parameter variation, so that the linearity of paralleling switch be avoided to deteriorate.
The one chip low-noise amplifier opens low-noise amplifier, series connection in using GaAs E/D pHEMT technique
The units such as pass, paralleling switch, control circuit are fully integrated to be realized in single IC chip, makes to realize letter within the scope of applying frequency
Number Linear Amplifer.
Insertion loss is small when the tandem tap is opened, and when shutdown provides isolation；It should when low-noise amplifier work
Tandem tap is opened, and guarantees that low-noise amplifier circuit works normally, radio-frequency input signals is amplified；When low-noise amplifier not
Tandem tap turns off when work, improves the isolation in low-noise amplifier circuit.
The paralleling switch uses series and parallel structure, and transistor Q1 and Q2 form series arm, to control radiofrequency signal
On-off, transistor Q3 form parallel branch, to improve the input tolerance power of radiofrequency signal.Transistor Q1 when switch is opened
It is connected with Q2, Q3 cut-off, the radiofrequency signal of low-noise amplifier input terminal is immediate by-pass to the output end of device, is improved simultaneously
Input tolerance power when switch is opened；Transistor Q1 is connected with Q2 cut-off, Q3 when switch OFF, provides isolation, guarantees low
Noise amplifier circuit works normally.
Further explanation of the technical solution of the present invention with reference to the accompanying drawing
As shown in Figure 1, the classical low-noise amplifier structural block diagram with bypass functionality is by a low-noise amplifier, a parallel connection
Switch and control circuit are constituted, and low-noise amplifier generallys use different process with paralleling switch and is made, distinguished by control circuit
Low-noise amplifier and paralleling switch are controlled, to switch the operating mode of low-noise amplifier.The low noise of this structure
What acoustic amplifier and switch were usually designed respectively, amplifier is not taken into account that usually and switchs the influence between different conditions.
In amplifier chain work, switch is in an off state, is in high-impedance state, will not usually have an impact to low-noise amplifier,
But when being in bypass condition, since radio frequency amplifier generallys use cascade or cascode structure realization, respectively such as Fig. 2 and Fig. 3
It is shown, when the injection of big signal, since first order amplifying transistor GS knot can be connected, it will appear nonlinear component, make side
The decline of line state lower linear degree, while other performances such as signal path insertion loss and standing wave can also deteriorate under bypass condition.
As shown in figure 4, one chip low-noise amplifier of the broadband High Linear with bypass functionality includes low-noise amplifier 1,
Tandem tap 2, paralleling switch 3, control circuit 4 and 5.
For low-noise amplifier 1 for amplifying radiofrequency signal, input terminal is in parallel with paralleling switch 3 for receiving radiofrequency signal,
Output end connects in series switch 2.
2 input terminal of tandem tap is serially connected in the output end of low-noise amplifier 1, and output end is used to emit radiofrequency signal, with
3 output end of paralleling switch is in parallel, to improve the isolation under amplifier chain off state, and reduces amplifier out
Influence of the parasitic parameter to 3 branch of paralleling switch under off state.
3 input terminal of paralleling switch exports the radiofrequency signal to receive biggish radiofrequency signal, output end, works as amplifier
Work is opened in bypass condition, bypassing big signal to output end.
As shown in figure 5, the structure having the same of control circuit 4 and 5, by voltage comparator 6, source follower 7 is several
A phase inverter 8 is constituted, and input voltage VIN is compared by voltage comparator 6 with reference voltage VREF, then exports height higher than VREF
Current potential then exports low potential lower than VREF, and source follower 7 improves the driving capability of voltage comparator 6, finally to buffer
By paraphase several times, different control voltage is exported via phase inverter 8, circuit is controlled；
For how to improve the circuit structure of the linearity of the one chip with bypass functionality low-noise amplifier and bandwidth of operation into
Explanation is gone, mainly following circuit part: low-noise amplifier 1, tandem tap 2 and paralleling switch 3.
As shown in fig. 6, low-noise amplifier part using classical cascode structure, guarantees that device has big work belt
Width, and there is the good linearity in bandwidth of operation.
As shown in fig. 7, paralleling switch 3 uses serial parallel structure, which possesses biggish bandwidth of operation and tolerance function
Rate, and have the good linearity.
For prevent low-noise amplifier 1 with paralleling switch 3 interacting under different conditions, in original cascade
It is improved in low-noise amplifier structure basis, is included in common-source stage transistor Q1 source electrode concatenation control pipe Q3 to ground, leads to
It crosses control control circuit 4 and 5 and controls the working condition of low-noise amplifier further to control Q3 grid voltage Vctrl, when
Q3 is opened when Vctrl is high level, and low-noise amplifier works normally, and when Vctrl is low level, Q3 is turned off, low noise amplification
Device shutdown, and amplifier common-source stage transistor Q1 input impedance is in high-impedance state, it can be in the base for not influencing amplifier status performance
Parasitic parameter caused by avoiding amplifier to change when turning off because of Q1 grid voltage on plinth changes, to avoid the line of paralleling switch 3
Property degree deteriorate；It connects in series switch 2 in 1 output end of low-noise amplifier, output end voltage variation is drawn when preventing amplifier from turning off
The parasitic parameter variation risen, so that the linearity of paralleling switch 3 be avoided to deteriorate.Paralleling switch 3 uses reflective designs, turns off shape
It is in high resistant under state, avoids the influence to 1 performance of low-noise amplifier.
Fig. 8 gives one chip low-noise amplifier of the broadband High Linear with bypass functionality and is amplifying and bypassing two kinds of shapes
S21 and OIP3 simulation curve under state, the results show that in 0.7-3.5GHz, under magnifying state, circuit can provide 15dB with
On gain and 32dBm or more OIP3；Under bypass condition, Insertion Loss is less than 1.5dB in channel, and OIP3 is greater than 38dBm, Ke Yiman
Sufficient 2G/3G/5G sub-6GHz/2.5GHz WLAN mobile communication application demand.
To sum up, the present invention mainly pass through design the one chip low-noise amplifier with bypass functionality amplifier, switch and
Controling circuit structure can make the amplifier work under various states in wider frequency band, and in bandwidth of operation
Possess the higher linearity, can satisfy 2G/3G/5G sub-6GHz/2.5GHz WLAN mobile communication application demand, main body
Following five aspects now: (1) by using common source and common grid amplifier structure realize under signal magnifying state wide bandwidth of operation and
High Linear in bandwidth of operation；(2) by using serial parallel structure switch realize bypass condition under device wide bandwidth of operation and
High Linear in bandwidth of operation；(3) it is switched by improving the control mode of amplifier and switch and being concatenated in amplifier out
The high linearity of circuit guarantee bypass condition lower switch access；(4) completed to amplifier by designing symmetrical control circuit and
The control of switch, thus the switching of further progress device operating mode；(5) GaAs E/D pHEMT technique is used, by low noise
The units such as acoustic amplifier, tandem tap, paralleling switch, control circuit are fully integrated to be realized in single IC chip, improves device
The integrated level of part improves the reliability of low noise amplifier module indirectly, provides more conveniences for the use of user.When
So, the low-noise amplifier of the present invention with bypass functionality includes low-noise amplifier involved in the prior art
Basic structure, such as cascade shown in low-noise amplifier universal architecture and Fig. 3 shown in Fig. 1 with bypass functionality
Amplifier architecture.
Embodiment 1
A kind of one chip low-noise amplifier of the broadband High Linear with bypass functionality, has a low-noise amplifier, and being used for will
Radio-frequency input signals amplifies；Two switches, one is connected on low-noise amplifier output end, for controlling low noise amplification
The on-off of device series loop, while improving the isolation of low-noise amplifier series loop under off state；Another and low noise
Acoustic amplifier circuit is in parallel, for the radio-frequency input signals of device to be immediate by-pass to the output end of device.
Two control circuits, a working condition switched for controlling low-noise amplifier series connection with it, another use
In the working condition of control low-noise amplifier and paralleling switch.
Low-noise amplifier uses cascode structure, and lesser work is utilized when on the one hand low-noise amplifier being made to work
Electric current obtains higher gain and guarantees the lower noise coefficient of device simultaneously, on the other hand obtains biggish bandwidth of operation；Altogether
Source capsule source series control transistor controls the operating mode of low-noise amplifier, on the one hand reduces off state decentralization
The parasitic capacitance of big device, when on the other hand preventing big radiofrequency signal from injecting, low-noise amplifier is opened.
Low-noise amplifier output end tandem tap uses cascaded structure, and there is a lesser insertion loss in when unlatching, when shutdown
Certain isolation can be provided.When low-noise amplifier work, the switch is opened, and guarantees the normal work in low-noise amplifier circuit
Make, radio-frequency input signals is amplified；The switch OFF when low-noise amplifier does not work improves low-noise amplifier circuit
Isolation.
Low-noise amplifier circuit paralleling switch uses series and parallel structure, and when unlatching can be by low-noise amplifier input terminal
Radiofrequency signal be immediate by-pass to the output end of device, while input tolerance function when switch is opened can be improved in series and parallel structure
Rate；Higher isolation can be provided when shutdown, guarantee that low-noise amplifier circuit works normally.
Two controling circuit structures are identical, are made of voltage comparator, source follower and one or more phase inverters,
It can be to the working condition of low-noise amplifier, tandem tap, paralleling switch by changing control voltage；
It is using GaAs E/D pHEMT technique, the units such as low-noise amplifier, tandem tap, paralleling switch, control circuit are complete
It is integrated in the realization of single IC chip, the Linear Amplifer of signal can be realized within the scope of wider applying frequency.
Claims (6)
1. one chip low-noise amplifier of a kind of broadband High Linear with bypass functionality, it is characterized in that including a low noise amplification
Device, tandem tap, paralleling switch, A control circuit, B control circuit, wherein tandem tap input terminal is serially connected in low-noise amplifier
Output end, output end is in parallel with paralleling switch output end, and paralleling switch input terminal is in parallel with low-noise amplifier input terminal, A control
Circuit processed and low-noise amplifier, tandem tap are connected in series, and B control circuit is connected company with low-noise amplifier, paralleling switch
It connects.
2. with according to a kind of one chip low-noise amplifier of the broadband High Linear with bypass functionality described in claim 1, feature
It is that the A control circuit, B control circuit structure are identical, including voltage comparator, source follower and multiple phase inverters, voltage
Comparator, source follower and several phase inverters are connected in series, and input voltage is compared by voltage comparator with reference voltage,
High potential is then exported higher than reference voltage, then exports low potential lower than reference voltage, source follower improves voltage to buffer
Comparator drives ability exports different control voltage and controls circuit finally by multiple phase inverter paraphase.
3. with according to a kind of one chip low-noise amplifier of the broadband High Linear with bypass functionality described in claim 1, feature
It is the low-noise amplifier include Q1 transistor, Q2 transistor and Q3 transistor, using cascode structure, common-source stage Q1 is brilliant
Body pipe source electrode concatenates Q3 transistor to ground, further controls Q3 transistor gate by control A control circuit and B control circuit
Voltage controls the working condition of low-noise amplifier, and when Q3 transistor gate voltage is greater than 0.6V, Q3 transistor is opened, low
Noise amplifier works normally, and when Q3 transistor gate voltage is lower than 0.3V, Q3 transistor is turned off, low-noise amplifier shutdown,
And amplifier common-source stage Q1 transistor input impedance is in high-impedance state, avoids amplifying on the basis of not influencing amplifier status performance
Parasitic parameter caused by changing when device turns off because of Q1 transistor gate voltage changes, and the linearity of paralleling switch is avoided to deteriorate；?
Low-noise amplifier output end connects in series switch, and parasitic parameter caused by output end voltage changes when preventing amplifier from turning off becomes
Change, the linearity of paralleling switch is avoided to deteriorate.
4. with the one chip low-noise amplifier according to a kind of broadband High Linear described in right 1 with bypass functionality, it is characterized in that institute
One chip low-noise amplifier is stated in using GaAs E/D pHEMT technique, low-noise amplifier, tandem tap, parallel connection are opened
The units such as pass, control circuit are fully integrated to be realized in single IC chip, makes to realize the linear of signal within the scope of applying frequency
Amplification.
5. with the one chip low-noise amplifier according to a kind of broadband High Linear described in right 1 with bypass functionality, it is characterized in that institute
State when tandem tap is opened that insertion loss is small, when shutdown provides isolation；When low-noise amplifier work, the tandem tap is opened
It opens, guarantees that low-noise amplifier circuit works normally, radio-frequency input signals is amplified；The series connection when low-noise amplifier does not work
Switch OFF improves the isolation in low-noise amplifier circuit.
6. with the one chip low-noise amplifier according to a kind of broadband High Linear described in right 1 with bypass functionality, it is characterized in that institute
It states paralleling switch and forms series arm using series and parallel structure, Q1 transistor and Q2 transistor, to control the logical of radiofrequency signal
Disconnected, Q3 transistor forms parallel branch, to improve the input tolerance power of radiofrequency signal；Q1 transistor and Q2 when switch is opened
The radiofrequency signal of low-noise amplifier input terminal, is immediate by-pass to the output end of device by transistor turns, Q3 transistor cutoff,
Input tolerance power when switch is opened is improved simultaneously；Q1 transistor is led with Q2 transistor cutoff, Q3 transistor when switch OFF
It is logical, isolation is provided, guarantees that low-noise amplifier circuit works normally.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811039160.1A CN109327194A (en) | 2018-09-06 | 2018-09-06 | A kind of one chip low-noise amplifier of the broadband High Linear with bypass functionality |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811039160.1A CN109327194A (en) | 2018-09-06 | 2018-09-06 | A kind of one chip low-noise amplifier of the broadband High Linear with bypass functionality |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111682854A (en) * | 2020-06-28 | 2020-09-18 | 广州慧智微电子有限公司 | Amplifier circuit structure and circuit control method |
| CN113872632A (en) * | 2021-08-24 | 2021-12-31 | 中电国基南方集团有限公司 | Single positive pressure controlled full-transceiving integrated monolithic circuit and transceiving control method thereof |
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| CN111682854A (en) * | 2020-06-28 | 2020-09-18 | 广州慧智微电子有限公司 | Amplifier circuit structure and circuit control method |
| CN113872632A (en) * | 2021-08-24 | 2021-12-31 | 中电国基南方集团有限公司 | Single positive pressure controlled full-transceiving integrated monolithic circuit and transceiving control method thereof |
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Address after: 210016 No.166, zhengfangzhong Road, moling street, Jiangning District, Nanjing City, Jiangsu Province Applicant after: Nanjing Guobo Electronics Co.,Ltd. Address before: 210016 No.166, zhengfangzhong Road, moling street, Jiangning District, Nanjing City, Jiangsu Province Applicant before: NANJING GUOBO ELECTRONICS Co.,Ltd. |
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