CN109256442A - The preparation method and hull cell of hull cell - Google Patents
The preparation method and hull cell of hull cell Download PDFInfo
- Publication number
- CN109256442A CN109256442A CN201811361755.9A CN201811361755A CN109256442A CN 109256442 A CN109256442 A CN 109256442A CN 201811361755 A CN201811361755 A CN 201811361755A CN 109256442 A CN109256442 A CN 109256442A
- Authority
- CN
- China
- Prior art keywords
- micro cell
- layer
- array
- micro
- cell array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 33
- 238000012546 transfer Methods 0.000 claims abstract description 33
- 239000004760 aramid Substances 0.000 claims abstract description 31
- 229920003235 aromatic polyamide Polymers 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000000853 adhesive Substances 0.000 claims abstract description 15
- 230000001070 adhesive effect Effects 0.000 claims abstract description 15
- 230000005611 electricity Effects 0.000 claims abstract description 14
- 238000003475 lamination Methods 0.000 claims abstract description 13
- 229920005989 resin Polymers 0.000 claims abstract description 12
- 239000011347 resin Substances 0.000 claims abstract description 12
- 238000007639 printing Methods 0.000 claims abstract description 10
- 238000003491 array Methods 0.000 claims abstract description 9
- 238000007641 inkjet printing Methods 0.000 claims abstract description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052796 boron Inorganic materials 0.000 claims abstract description 5
- 238000001312 dry etching Methods 0.000 claims abstract description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 5
- 239000011574 phosphorus Substances 0.000 claims abstract description 5
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 100
- 239000012528 membrane Substances 0.000 claims description 8
- 239000012790 adhesive layer Substances 0.000 claims description 6
- 230000000875 corresponding effect Effects 0.000 claims description 5
- 239000003365 glass fiber Substances 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 4
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 4
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims description 4
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims description 4
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 238000005266 casting Methods 0.000 claims description 3
- 230000002596 correlated effect Effects 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 claims description 2
- 239000000571 coke Substances 0.000 claims 1
- 239000000463 material Substances 0.000 description 10
- 230000008901 benefit Effects 0.000 description 9
- 239000013047 polymeric layer Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000002508 contact lithography Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Disclose the preparation method and hull cell of a kind of hull cell, method includes that dry-etching silicon wafer forms multiple micro cell pattern arrays, micro cell pattern array described in the boron doping that localizes and phosphorus doping, micro cell array described in transfer layer intimate contact is to separate the micro cell array from silicon wafer, micro cell array is transferred to aramid layer by transfer layer, then the transfer layer is removed, ink jet printing height and the consistent conductive layer of micro cell height make the adjacent micro cell array of the conductive layer and form electricity interconnection on aramid layer, lamination forms flexible back plate, on the electrically conductive using micro cell as the supporting course of center registration printing preset space length and predetermined altitude, gap is coated with transparent silicon resin adhesive on the supporting course of micro cell and two sides, sphere lens are via the silicon resin adhesive relative to micro cell alignment and fixation , methyl methacrylate layer is coated with to cover the sphere lens, supporting course and conductive layer.
Description
Technical field
The present invention relates to hull cell equipment technical field, the preparation method and thin-film electro of especially a kind of hull cell
Pond.
Background technique
Conventional crystal silicon solar cell is made of silicon, and battery major part is frangible, is also easy to produce invisible crack, there is one layer mostly
Tempered glass causes weight big as protection, and inconvenient to carry, shock resistance is poor, and cost is high, and efficiency more or less reduces, film
Battery overcomes disadvantages mentioned above, and major advantage is that quality is small, thickness is very thin, flexible.
In the prior art, the incident photon-to-electron conversion efficiency in film positive electricity pond is there is no conventional crystal silion cell high conversion efficiency,
Photo attenuation is big, and the growth mechanism of thin-film material determines that thin film solar cell easily deliquesces, and therefore, improves transformation efficiency, avoids
There is strong growth requirements for photo attenuation and deliquescence.
Disclosed above- mentioned information are used only for enhancing the understanding to background of the present invention in the background section, it is thus possible to
Information comprising not constituting the prior art known to a person of ordinary skill in the art in home.
Summary of the invention
In view of the above problems, the present invention provides the preparation method and hull cell of a kind of hull cell, preparation of the invention
Method can be improved preparation efficiency and reduce material cost, can be avoided trueness error caused by the deformation in transfer process, keeps away
The performance degradation for having exempted from hull cell significantly improves the alignment precision of light and micro cell, can most optimally gather sunlight
Collection avoids photo attenuation, improves overall conversion efficiency on micro cell.The property of the hull cell of preparation method processing of the present invention
It can be obviously improved with precision and reduce processing cost.
The purpose of the present invention is be achieved by the following technical programs.
A kind of preparation method of hull cell includes the following steps:
Dry-etching silicon wafer forms multiple micro cell pattern arrays, micro cell figure described in the boron doping that localizes and phosphorus doping
Case array, silicon wafer described in photoetching to form the micro cell arrays of multiple predetermined lengths and width, be passivated micro cell side wall and
Anisotropic etching micro cell side wall and bottom make the thickness of micro cell be less than predetermined thickness,
For micro cell array described in transfer layer intimate contact to separate the micro cell array from silicon wafer, transfer layer will be micro-
Cell array is transferred to aramid layer, then removes the transfer layer, wherein the transfer layer includes contacting the micro cell battle array
The PDMS membrane and glass fibre membrane of column, the aramid layer are described micro- via the adhesive layer fixation containing Argent grain
Cell array,
Ink jet printing height and the consistent conductive layer of micro cell height make the adjacent institute of the conductive layer on aramid layer
It states micro cell array and forms electricity interconnection, lamination forms flexible back plate, and screen-printed metal line is in flexible back plate, then soft
Property backboard on deposit patterned dielectric layer, aramid layer setting in the flexible back plate,
On the electrically conductive using micro cell as the supporting course of center registration printing preset space length and predetermined altitude, in micro cell and
Gap is coated with transparent silicon resin adhesive on the supporting course of two sides, and sphere lens are via the silicon resin adhesive relative to micro-
Battery alignment and fixation are coated with methyl methacrylate layer to cover the sphere lens, supporting course and conductive layer.
In the described method, via adhesive layer by the rigid lower surface of flexible back plate vacuum lamination to shell, in shell
Rigid upper surface mould the microlens array that is aligned with the sphere lens so that microlens array, sphere lens and micro- electricity
Pond array is mutually aligned.
In the described method, the predetermined thickness is 6-8 microns, and the preset space length is the 1-2 of the width of micro cell
Times, the focal length of the predetermined altitude and the sphere lens is positively correlated.
In the described method, rigid lower surface is equipped with the connection terminal being conductively connected with flexible back plate and for heat dissipation
Heat-sink unit.
In the described method, conductive layer and the stacking of micro cell array portion.
In the described method, the interval between microlens array, sphere lens and micro cell array is so that sunlight is worn
Saturating microlens array is focused on respectively on corresponding sphere lens, and the sunlight from sphere lens focuses on corresponding micro- respectively
On battery.
In the described method, conductive layer is electrically connected the flexible back plate, and conductive layer includes multiple conductive electrodes, conductive electricity
Pole connects micro cell to form interconnection conductive network.
In the described method, hot-roll lamination printed wiring board forms flexible back between the first and second copper clad layers casting dies
Plate.
In the described method, the microlens array is cylindrical microlenses array.
According to another aspect of the present invention, a kind of hull cell is prepared by the method.
Beneficial effects of the present invention
In preparation method of the present invention, silicon wafer described in photoetching to form the micro cell arrays of multiple predetermined lengths and width,
Passivation micro cell side wall and anisotropic etching micro cell side wall and bottom enable the thickness of micro cell to be less than predetermined thickness
It enough improves micro cell dimensional accuracy and does not reduce the photoelectric conversion efficiency of micro cell, micro cell battle array described in transfer layer intimate contact
For column to separate the micro cell array from silicon wafer, micro cell array is transferred to aramid layer by transfer layer, then described in removing
Transfer layer realizes high efficiency preparation by transfer and low material cost forms micro cell array, avoids and hold in the prior art
Easily rupturable risk, the PDMS membrane for contacting the micro cell array can be with high fidelity transfer and glass fibre
Film can be avoided trueness error caused by the deformation in transfer process, ink jet printing height and micro cell height on aramid layer
Consistent conductive layer makes the adjacent micro cell array of the conductive layer and forms electricity interconnection, and height unanimously avoids thin-film electro
The performance degradation in pond, on the electrically conductive using micro cell as the supporting course of center registration printing preset space length and predetermined altitude, micro-
Gap is coated with transparent silicon resin adhesive on battery and the supporting course of two sides, and sphere lens are via the silicon resin adhesive phase
For micro cell alignment and fixation, this significantly improves the alignment precision of sunlight and micro cell, can be most optimally by sunlight
It is gathered on micro cell, avoids photo attenuation, improve overall conversion efficiency.The hull cell of preparation method processing of the present invention
Performance and precision are obviously improved and reduce processing cost.
The above description is only an overview of the technical scheme of the present invention, in order to make technological means of the invention clearer
Understand, reach the degree that those skilled in the art can be implemented in accordance with the contents of the specification, and in order to allow the present invention
Above and other objects, features and advantages can be more clearly understood, illustrated below with a specific embodiment of the invention
Explanation.
Detailed description of the invention
By reading the detailed description in hereafter preferred embodiment, various other advantages and benefits of the present invention
It will become apparent to those of ordinary skill in the art.Figure of description only for the purpose of illustrating preferred embodiments,
And it is not to be construed as limiting the invention.It should be evident that drawings discussed below is only some embodiments of the present invention,
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings
Other attached drawings.And throughout the drawings, identical component is presented with like reference characters.
In the accompanying drawings:
Fig. 1 is the step schematic diagram of the preparation method of hull cell according to an embodiment of the invention.
Fig. 2 is the unit of the hull cell of the preparation method preparation of hull cell according to an embodiment of the invention
Schematic diagram.
Below in conjunction with drawings and examples, the present invention will be further explained.
Specific embodiment
The specific embodiment that the present invention will be described in more detail below with reference to accompanying drawings.Although being shown in attached drawing of the invention
Specific embodiment, it being understood, however, that may be realized in various forms the present invention without that should be limited by embodiments set forth here
System.It is to be able to thoroughly understand the present invention on the contrary, providing these embodiments, and can be complete by the scope of the present invention
Be communicated to those skilled in the art.
It should be noted that having used some vocabulary in the specification and claims to censure specific components.Ability
Field technique personnel it would be appreciated that, technical staff may call the same component with different nouns.This specification and right
It is required that not in such a way that the difference of noun is as component is distinguished, but with the difference of component functionally as differentiation
Criterion."comprising" or " comprising " as mentioned throughout the specification and claims are an open language, therefore should be solved
It is interpreted into " including but not limited to ".Specification subsequent descriptions are to implement better embodiment of the invention, so the description be with
For the purpose of the rule of specification, the range that is not intended to limit the invention.Protection scope of the present invention is when the appended right of view
It is required that subject to institute's defender.
In order to facilitate understanding of embodiments of the present invention, further by taking specific embodiment as an example below in conjunction with attached drawing to be solved
Explanation is released, and each attached drawing does not constitute the restriction to the embodiment of the present invention.
In order to better understand, the step of Fig. 1 is the preparation method according to the hull cell of one embodiment of the invention is shown
It is intended to, as shown in Figure 1, a kind of preparation method of hull cell includes the following steps:
A kind of preparation method of hull cell includes the following steps:
Dry-etching silicon wafer forms multiple micro cell pattern arrays, micro cell figure described in the boron doping that localizes and phosphorus doping
Case array, silicon wafer described in photoetching to form the micro cell arrays 1 of multiple predetermined lengths and width, be passivated micro cell side wall and
Anisotropic etching micro cell side wall and bottom make the thickness of micro cell be less than predetermined thickness,
For micro cell array 1 described in transfer layer intimate contact to separate the micro cell array 1 from silicon wafer, transfer layer will
Micro cell array 1 is transferred to aramid layer 2, then removes the transfer layer, wherein the transfer layer includes contacting micro- electricity
The PDMS membrane and glass fibre membrane of pond array 1, the aramid layer 2 are fixed via the adhesive layer containing Argent grain
The micro cell array 1,
Ink jet printing height and the consistent conductive layer 3 of micro cell height make the conductive layer 3 adjacent on aramid layer 2
The micro cell array 1 and electricity interconnection is formed, lamination forms flexible back plate 4, and screen-printed metal line is in flexible back plate 4, so
The deposit patterned dielectric layer in flexible back plate 4 afterwards, the setting of aramid layer 2 in the flexible back plate 4,
Using micro cell as the supporting course 5 of center registration printing preset space length and predetermined altitude on conductive layer 3, in micro cell
It is coated with transparent silicon resin adhesive with gap on the supporting course 5 of two sides, sphere lens 6 are opposite via the silicon resin adhesive
In micro cell alignment and fixation, methyl methacrylate layer is coated with to cover the sphere lens 6, supporting course 5 and conductive layer 3.Ginseng
See Fig. 2.
In the described method, via adhesive layer by the rigid lower surface of 4 vacuum lamination of flexible back plate to shell, in shell
Rigid upper surface mould the microlens array that is aligned with the sphere lens 6 so that microlens array, sphere lens 6 and micro-
Cell array 1 is mutually aligned.
For a further understanding of the present invention, in one embodiment, sunlight is directly changed into the conversion of electricity by hull cell.
Currently, the use of the relative inefficiencies due to crystalline silicon material, hull cell has high material cost.In the prior art, crystal
Silicon is sawn into chip, these chips are then processed into battery, and is welded in together to constitute final module.Typical polycrystalline effect
Rate be about 15% and battery be rigid it is big with weight.Dry-etching silicon wafer forms multiple micro cell pattern arrays, part
Change micro cell pattern array described in boron doping and phosphorus doping.In one embodiment, transfer layer intimate contact institute of the invention
Micro cell array 1 is stated to separate the micro cell array 1 from silicon wafer, micro cell array 1 is transferred to aramid layer by transfer layer
2, it removes the transfer layer then to reach low weight and ability flexible, realizes the lightweight for having both high efficiency and low material cost
Flexible thin-film battery.
In one embodiment, transfer layer contacts printing treatment, and which obviate shift relatively large stretch of silicon in the prior art
And the rupture and defect formed.Transfer layer contact printing treatment of the invention also reduces hull cell assembling cost, because of number
Thousand micro cells can be by trans-printing in parallel.
In one embodiment, 1 thickness of micro cell array is to the electric current assembled on the primary influence of battery performance
It influences, for thinner battery, absorbs less photon, thus generate smaller electric current.In certain embodiments of the present invention
In silicon thickness will be required at about 6-8 microns, to reach required efficiency.
In one embodiment, transfer processing include micro cell array 1 is taken off from silicon wafer onto transfer layer, followed by this
A little elements are transferred to aramid layer 2 from transfer layer surface.By be suitably designed undercutting etching and by these elements from they
Aramid layer 2 is thrown off, it is possible to execute removing step with high yield.Transfer is by between aramid layer 2 and micro cell array 1
Strong adhesion layer is realized.In both circumstances, the contact area between aramid layer 2 and micro cell array 1 must be enough
Greatly, to realize effective transfer.Surfaces slippery enough between aramid layer 2 and micro cell array 1 is to realize large access area.
In one embodiment, mobile with sub-micrometer precision for the installs fixture of transfer layer, made by sensor measurement
It is firmly aligned with high precision with displacement, view-based access control model measurement, in one embodiment, which is with microscope and CCD camera
It realizes, CCD camera allows the calibration mark shifted in layer surface to be corrected to silicon wafer and aramid layer 2.Its precision is ten
/ mono- micron order.
In one embodiment, the predetermined thickness is 6-8 microns, and the preset space length is the 1-2 of the width of micro cell
Times, the focal length of the predetermined altitude and the sphere lens 6 is positively correlated.
In one embodiment, rigid lower surface is equipped with the connection terminal being conductively connected with flexible back plate 4 and for radiating
Heat-sink unit.
In one embodiment, ink jet printing height makes with the consistent conductive layer 3 of micro cell height on aramid layer 2
The adjacent micro cell array 1 of the conductive layer 3 and formation electricity interconnection, it is mutual that the present invention minimizes or completely avoid micro cell electricity
The degeneration of the Electronic Performance of connection, micro cell and conductive layer 3, which are formed, has the exposed surface for having flat geometric shape
Surface texture.In one embodiment, the exposed surface with flat geometric shape can be by means of photoetching and deposition
Technology is with electricity interconnection.All the points on exposed surface are all in the same plane.
In one embodiment, the gap between adjacent micro cell is filled by conductive layer 3 or aramid layer 2.
In one embodiment, micro cell is directly integrated in the pre-set groove of aramid layer 2.
In one embodiment, micro cell array 1 is located at the polymeric layer on the receiving surface of aramid layer 2.Polymer
Layer is supported by aramid layer 2 so that micro cell array 1 is embedded into or is implanted into polymeric layer.Polymeric layer includes being capable of physical displacement
Or it reforms to accommodate the material of micro cell array 1, such as low viscosity fluid.Optionally, polymeric layer of the invention receive can
It can occur chemically or physically to convert after printed semiconductor element, with hardening, solidification or undergo phase transition or viscosity change, with
So that embedded micro cell array 1 is kept in place.In one embodiment, polymeric layer of the invention may include a variety of materials
Material, polymeric layer preferably include one or more low viscosity materials, are able to carry out physical displacement or reform to accommodate and inlay
Embedding micro cell array 1.For example, in one embodiment, polymeric layer includes with the viscosity selected from 200 to 500 centipoise ranges
Material.
In one embodiment, the interval between microlens array, sphere lens 6 and micro cell array 1 is so that sunlight
It penetrates microlens array to focus on respectively on corresponding sphere lens 6, the sunlight from sphere lens 6 focuses on correspondence respectively
Micro cell on.
In one embodiment, micro cell array 1 is surface mounted in flexible back plate 4, which is in turn laminated to
The rigid lower surface of shell closes it with microlens array and waterproof membrane.
In one embodiment, micro cell array 1 can be transferred that layer is micro- to be transferred on 2 surface of aramid layer；It is deposited on
The electrical connection established and arrive micro cell is electrically interconnected in conductive layer 3 on 2 surface of aramid layer.
In one embodiment, conductive structure is interconnected in conductive layer 3 and is fixed with the metal being located on 2 lower surface of aramid layer
Electrical connection is established between part；The offer of supporting course 5 is aligned and is supported to sphere lens 6.
In one embodiment, flexible back plate 4 includes printed wiring board, can be by being sandwiched in the first and second copper clad layers pressures
Fiber between part reinforces preimpregnated glass fiber composite dielectric layer composition.Deposit dielectric layer is simultaneously on metal line surface
It is patterned, screen-printed dielectric layer.
The rigid lower surface of shell is pressed in the back side of flexible back plate 4 by adhesive phase, adhesive includes bi-component ring
Oxygen resin, polyurethane, acrylic acid or silicone based adhesives.
In one embodiment, the vacuum lamination of platen machine or the lamination with hot-roll lamination realization backboard.
In one embodiment, transparent silicon resin adhesive is assigned to micro cell array 1 using liquid deposition method
On upper surface, the rearmost positions of sphere lens 6 by supporting course 5 position restriction, it is ensured that sphere lens 6 to each micro cell it is non-
Often accurately alignment.Optically clear adhesive partially or completely solidifies.
In one embodiment, conductive layer 3 carries out electric interconnection to micro cell.Conductive layer 3 can be effectively patterned in
In large area, allow for having larger tolerance in terms of placing accuracy via the micro cell array 1 of trans-printing.This processing and
Design advantage causes to relax the processing constraint and device geometric shape tolerance based on trans-printing with micro cell array 1.Example
Such as, the use of conductive electrode and micro cell array 1 significantly relaxes the calibration and positioning of the micro cell array 1 by trans-printing
The design and placement constraint of aspect.In addition, the use of conductive electrode allows for the effectively electricity interconnection of a large amount of micro cells.
In one embodiment, one or more electrodes or electric interconnection architecture are provided.
In one embodiment, conductive layer 3 has the engagement pad for manufacturing electrical connection, is arranged on micro cell array 1
Unilateral side.
In one embodiment, hull cell is assembled into the curved surface of such as lens, lens array, waveguide or waveguide array
On.
In one embodiment, conductive layer 3 and the stacking of 1 part of micro cell array.
In one embodiment, conductive layer 3 is electrically connected the flexible back plate 4, and conductive layer 3 includes multiple conductive electrodes, leads
Electrode connects micro cell to form interconnection conductive network.
In one embodiment, hot-roll lamination printed wiring board forms flexible back between the first and second copper clad layers casting dies
Plate 4.
In one embodiment, the microlens array is cylindrical microlenses array.
According to another aspect of the present invention, hull cell is prepared through the method.
Industrial applicibility
Hull cell preparation method of the invention and its hull cell can be manufactured and be used in storage apparatus field.
The basic principle of the application is described in conjunction with specific embodiments above, however, it is desirable to, it is noted that in this application
The advantages of referring to, advantage, effect etc. are only exemplary rather than limitation, must not believe that these advantages, advantage, effect etc. are the application
Each embodiment is prerequisite.In addition, detail disclosed above is merely to exemplary effect and the work being easy to understand
With, rather than limit, it is that must be realized using above-mentioned concrete details that above-mentioned details, which is not intended to limit the application,.
As the skilled person will recognize, can connect, arrange by any way, configure these devices, device,
Equipment, system.The word of such as "include", "comprise", " having " etc. is open vocabulary, is referred to " including but not limited to ", and
It can be used interchangeably with it.Vocabulary "or" and "and" used herein above refer to vocabulary "and/or", and can be used interchangeably with it, unless
It is not such that context, which is explicitly indicated,.Vocabulary " such as " used herein above refer to phrase " such as, but not limited to ", and can be with it mutually
Change use.
It may also be noted that each component or each step are can to decompose and/or reconfigure in the present processes
's.These decompose and/or reconfigure the equivalent scheme that should be regarded as the application.
The above description of disclosed aspect is provided so that any person skilled in the art can make or use this
Application.Various modifications in terms of these are readily apparent to those skilled in the art, and are defined herein
General Principle can be applied to other aspect without departing from scope of the present application.Therefore, the application is not intended to be limited to
Aspect shown in this, but according to principle disclosed herein and the consistent widest range of novel feature.
In order to which purpose of illustration and description has been presented for above description.In addition, this description is not intended to the reality of the application
It applies example and is restricted to form disclosed herein.Although already discussed above multiple exemplary aspects and embodiment, this field skill
Its certain modifications, modification, change, addition and sub-portfolio will be recognized in art personnel.
Claims (10)
1. a kind of preparation method of hull cell comprising following steps:
Dry-etching silicon wafer forms multiple micro cell pattern arrays, micro cell pattern battle array described in the boron doping that localizes and phosphorus doping
Column, silicon wafer described in photoetching to form the micro cell arrays of multiple predetermined lengths and width, be passivated micro cell side wall and respectively to
Anisotropic etch micro cell side wall and bottom make the thickness of micro cell be less than predetermined thickness,
Micro cell array described in transfer layer intimate contact is to separate the micro cell array from silicon wafer, and transfer layer is by micro cell
Array is transferred to aramid layer, then removes the transfer layer, wherein the transfer layer includes contacting the micro cell array
PDMS membrane and glass fibre membrane, the aramid layer is via the fixed micro cell of the adhesive layer containing Argent grain
Array,
Ink jet printing height makes the conductive layer adjoining described micro- with the consistent conductive layer of micro cell height on aramid layer
Cell array and electricity interconnection is formed, lamination forms flexible back plate, then screen-printed metal line is carried on the back in flexible back plate in flexibility
Deposit patterned dielectric layer on plate, aramid layer setting in the flexible back plate,
On the electrically conductive using micro cell as the supporting course of center registration printing preset space length and predetermined altitude, in micro cell and two sides
Supporting course on gap be coated with transparent silicon resin adhesive, sphere lens are via the silicon resin adhesive relative to micro cell
Alignment and fixation are coated with methyl methacrylate layer to cover the sphere lens, supporting course and conductive layer.
2., will be under the rigidity of flexible back plate vacuum lamination to shell via adhesive layer according to the method described in claim 1, wherein
Surface moulds the microlens array being aligned with the sphere lens in the rigid upper surface of shell, so that microlens array, spherical shape
Lens and micro cell array are mutually aligned.
3. the preset space length is micro cell according to the method described in claim 1, wherein, the predetermined thickness is 6-8 microns
1-2 times of width, the focal length of the predetermined altitude and the sphere lens is positively correlated.
4. according to the method described in claim 2, wherein, rigid lower surface is equipped with the connection terminal being conductively connected with flexible back plate
With the heat-sink unit for heat dissipation.
5. according to the method described in claim 1, wherein, conductive layer and micro cell array portion are laminated.
6. according to the method described in claim 1, wherein, the interval between microlens array, sphere lens and micro cell array
So that sunlight penetrates microlens array and focused on corresponding sphere lens respectively, the sunlight from sphere lens gathers respectively
Coke is on corresponding micro cell.
7. according to the method described in claim 1, wherein, conductive layer is electrically connected the flexible back plate, and conductive layer includes multiple leads
Electrode, conductive electrode connect micro cell to form interconnection conductive network.
8. according to the method described in claim 1, wherein, the hot-roll lamination printed wiring between the first and second copper clad layers casting dies
Plate forms flexible back plate.
9. according to the method described in claim 1, wherein, the microlens array is cylindrical microlenses array.
10. a kind of hull cell, which is characterized in that the hull cell passes through method of any of claims 1-9
Preparation.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811361755.9A CN109256442B (en) | 2018-11-15 | 2018-11-15 | Preparation method of thin film battery and thin film battery |
| CN202010311978.5A CN111509087B (en) | 2018-11-15 | 2018-11-15 | Preparation method of thin film battery and thin film battery |
| CN202010315721.7A CN111509088B (en) | 2018-11-15 | 2018-11-15 | Preparation method of thin film battery and thin film battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811361755.9A CN109256442B (en) | 2018-11-15 | 2018-11-15 | Preparation method of thin film battery and thin film battery |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010315721.7A Division CN111509088B (en) | 2018-11-15 | 2018-11-15 | Preparation method of thin film battery and thin film battery |
| CN202010311978.5A Division CN111509087B (en) | 2018-11-15 | 2018-11-15 | Preparation method of thin film battery and thin film battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109256442A true CN109256442A (en) | 2019-01-22 |
| CN109256442B CN109256442B (en) | 2020-05-22 |
Family
ID=65044150
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811361755.9A Active CN109256442B (en) | 2018-11-15 | 2018-11-15 | Preparation method of thin film battery and thin film battery |
| CN202010311978.5A Active CN111509087B (en) | 2018-11-15 | 2018-11-15 | Preparation method of thin film battery and thin film battery |
| CN202010315721.7A Active CN111509088B (en) | 2018-11-15 | 2018-11-15 | Preparation method of thin film battery and thin film battery |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010311978.5A Active CN111509087B (en) | 2018-11-15 | 2018-11-15 | Preparation method of thin film battery and thin film battery |
| CN202010315721.7A Active CN111509088B (en) | 2018-11-15 | 2018-11-15 | Preparation method of thin film battery and thin film battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (3) | CN109256442B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114258202A (en) * | 2019-06-18 | 2022-03-29 | 安徽省华腾农业科技有限公司 | Printed circuit board processing method and printed circuit board |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01105581A (en) * | 1987-10-19 | 1989-04-24 | Sanyo Electric Co Ltd | Manufacture of photovoltaic device |
| JP2001119043A (en) * | 1999-10-14 | 2001-04-27 | Sony Corp | Equipment for manufacturing semiconductor element |
| CN1639879A (en) * | 2002-01-02 | 2005-07-13 | 瑞威欧公司 | Photovoltaic cell and method of manufacture of photovoltaic cells |
| WO2010117697A2 (en) * | 2009-03-31 | 2010-10-14 | Ovshinsky Innovation, Llc | Monolithic integration of photovoltaic cells |
| CN103646848A (en) * | 2004-06-04 | 2014-03-19 | 伊利诺伊大学评议会 | Methods and devices for fabricating and assembling printable semiconductor elements |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001358351A (en) * | 2000-06-13 | 2001-12-26 | Canon Inc | Method and apparatus for fabricating photovoltaic element, and solar cell module |
| FR2849276A1 (en) * | 2002-12-24 | 2004-06-25 | Commissariat Energie Atomique | Integrated photovoltaic module operating with a light concentration system, used for generating low cost electricity from solar radiation |
| US7811900B2 (en) * | 2006-09-08 | 2010-10-12 | Silicon Genesis Corporation | Method and structure for fabricating solar cells using a thick layer transfer process |
| WO2010036807A1 (en) * | 2008-09-24 | 2010-04-01 | The Board Of Trustees Of The University Of Illinois | Arrays of ultrathin silicon solar microcells |
| CN104205348B (en) * | 2011-12-09 | 2017-05-31 | 森普留斯公司 | High concentration optical-electric module and its manufacture method |
| JP6507915B2 (en) * | 2015-08-03 | 2019-05-08 | 住友電気工業株式会社 | Concentrated solar power generation unit, concentrated solar power generation module, concentrated solar power generation panel, concentrated solar power generation apparatus |
-
2018
- 2018-11-15 CN CN201811361755.9A patent/CN109256442B/en active Active
- 2018-11-15 CN CN202010311978.5A patent/CN111509087B/en active Active
- 2018-11-15 CN CN202010315721.7A patent/CN111509088B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01105581A (en) * | 1987-10-19 | 1989-04-24 | Sanyo Electric Co Ltd | Manufacture of photovoltaic device |
| JP2001119043A (en) * | 1999-10-14 | 2001-04-27 | Sony Corp | Equipment for manufacturing semiconductor element |
| CN1639879A (en) * | 2002-01-02 | 2005-07-13 | 瑞威欧公司 | Photovoltaic cell and method of manufacture of photovoltaic cells |
| CN103646848A (en) * | 2004-06-04 | 2014-03-19 | 伊利诺伊大学评议会 | Methods and devices for fabricating and assembling printable semiconductor elements |
| WO2010117697A2 (en) * | 2009-03-31 | 2010-10-14 | Ovshinsky Innovation, Llc | Monolithic integration of photovoltaic cells |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114258202A (en) * | 2019-06-18 | 2022-03-29 | 安徽省华腾农业科技有限公司 | Printed circuit board processing method and printed circuit board |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111509087B (en) | 2022-06-24 |
| CN109256442B (en) | 2020-05-22 |
| CN111509088A (en) | 2020-08-07 |
| CN111509088B (en) | 2022-08-26 |
| CN111509087A (en) | 2020-08-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7923793B2 (en) | Image sensor module and fabrication method thereof | |
| US6762359B2 (en) | Photovoltaic panel and method of producing same | |
| US7645628B2 (en) | Method and system for fabricating semiconductor components with lens structures and lens support structures | |
| TWI512956B (en) | Optical imaging apparatus and methods of making the same | |
| CN104380465B (en) | The manufacture method of camera device and the manufacture method of semiconductor device | |
| US20210320095A1 (en) | Camera assembly, lens module, and electronic device | |
| US20110192445A1 (en) | High precision, high speed solar cell arrangement to a concentrator lens array and methods of making the same | |
| KR101424930B1 (en) | Integrated image sensor package with liquid crystal lens | |
| EP2682797B1 (en) | Method for manufacturing lens module, and lens module | |
| JP4510629B2 (en) | Manufacturing method of semiconductor device | |
| CN106206485A (en) | Imageing sensor module and preparation method thereof | |
| US11943864B2 (en) | Stretchable/conformable electronic and optoelectronic circuits, methods, and applications | |
| US7745834B2 (en) | Semiconductor image sensor and method for fabricating the same | |
| CN101383359A (en) | Optical device and method for fabricating the same | |
| US10727260B2 (en) | Image sensor packaging method, image sensor package and lens module | |
| FR2740935A1 (en) | METHOD FOR MANUFACTURING A SET OF ELECTRONIC MODULES FOR ELECTRONIC MEMORY CARDS | |
| CN108076671B (en) | Optical assembly comprising a spacer directly adhered to a substrate | |
| CN109256442A (en) | The preparation method and hull cell of hull cell | |
| CN110416360A (en) | The preparation method and hull cell of hull cell | |
| WO2008097805A2 (en) | Conductor fabrication for optical element | |
| CN218769538U (en) | Packaging structure | |
| CN117692732A (en) | Imaging module and preparation method thereof | |
| WO2020103213A1 (en) | Photographing assembly, encapsulating method therefor, lens module and electronic device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230629 Address after: Room 202, Weiteng Technology Business incubator, Qingyun South Road, Economic Development Zone, Suzhou City, Anhui Province, 234000 Patentee after: Suzhou Teng Teng Intellectual Property Advisory Co.,Ltd. Address before: 234000 No. 229 Bianhe East Road, Tuoqiao District, Suzhou City, Anhui Province Patentee before: ANHUI HUATENG AGRICULTURAL TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right |