CN109244259A - A kind of QD-LED packaging body and preparation method thereof - Google Patents
A kind of QD-LED packaging body and preparation method thereof Download PDFInfo
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- CN109244259A CN109244259A CN201811085668.5A CN201811085668A CN109244259A CN 109244259 A CN109244259 A CN 109244259A CN 201811085668 A CN201811085668 A CN 201811085668A CN 109244259 A CN109244259 A CN 109244259A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
- H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
The present invention relates to a kind of QD-LED packaging bodies and preparation method thereof, the QD-LED packaging body uses vertical structure, by three primary colours sandwich package, the independently-powered control of three primary colours shines, single package body just contains three primary colours, can obtain required color according to demand, compared with the prior art, horizontal occupied area is about original 1/3, and has better even light mixing.
Description
Technical field
The present invention relates to illumination display fields, are specifically related to a kind of QD-LED packaging body and preparation method thereof.
Background technique
Colloidal Quantum Dots (quantum dots, abbreviation QDs) as novel fluorescent material, fluorescence quantum efficiency >
80%, the emission spectra that quantum dot LED (quantum dot light emitting device is abbreviated as QD-LED) is made can be with
Blue light is covered to most of visible light wave range of feux rouges, has many advantages, such as that significant energy conservation, colour rendering are good, flexible.It is aobvious in plane
Show, fields, the QD-LED such as LCD backlight have good application prospect.
Existing QD-LED is usually monochromatic encapsulation, in order to obtain the light of white light or other colors, usually will
The QD-LED of three primary colours is combined, and general RGB is a pixel, since light source is monochromatic light and uses horizontal arrangement, so that
Single pixel point is larger, influences the promotion of resolution ratio, and will appear that light mixing is uneven, influences asking for the uniformity of output color
Topic.
Summary of the invention
The present invention is intended to provide a kind of QD-LED packaging body and preparation method thereof, to solve the above problem.
Concrete scheme is as follows:
A kind of production method of QD-LED packaging body, comprising the following steps:
S1, prepared substrate, form conductive layer on substrate, and conductive layer includes mutually isolated negative regions and three
Positive pole zone；
S2, on the electrically conductive spin coating PMMA film layer；
S3, the spin coating cathode ITO layer on PMMA film layer, and make the cathode ITO layer be electrically connected with negative regions and with it is all
Positive pole zone is electrically isolated；
S4, the first quantum dot layer is printed in cathode ITO layer；
S5, spin coating PEDOT:PSS layers on the first quantum dot layer；
S6, in the positive ITO layers of PEDOT:PSS layers of deposition, and make the anode ITO layer be electrically connected with a positive pole zone and and its
Its positive pole zone and negative regions are all electrically isolated, the first quantum dot is made；
S7, silicon dioxide layer is sputtered in the positive ITO layer of the first quantum dot；
S8, the spin coating PMMA film layer in silicon dioxide layer, and step S3~S6 is repeated, the second quantum dot is made；
S9, step S7 and S8 are repeated, third quantum dot is made；
Wherein, the first above-mentioned quantum dot, the second quantum dot and third quantum dot are respectively red light quantum point, green quantum
Point and blue light quantum point first, the cathode ITO layer of the first quantum dot, the second quantum dot and third quantum dot and negative regions
Electrical connection, positive ITO layer are electrically connected with the one of three positive pole zones.
Further, further include step S10, be packaged processing with silica gel after completion step S9, so that the first quantum dot,
Second quantum dot and third quantum dot are isolated from the outside.
The present invention also provides a kind of QD-LED packaging body, including substrate and it is cascading from bottom to top in substrate
On the first quantum dot, the second quantum dot and third quantum dot, there are on substrate a cathode and three anodes, the first quantum dot,
The negative electrode of second quantum dot and third quantum dot is electrically connected with the cathode on substrate, the first quantum dot, the second quantum dot and
The positive electrode of third quantum dot is electrically connected with three positive one on substrate respectively, and the first quantum dot, the second quantum dot
It is respectively the one of red light quantum point, green light quantum point and blue light quantum point with third quantum dot.
Further, also by silica gel, silica gel keeps the first quantum dot, the second quantum dot and third quantum dot equal for encapsulation on substrate
It is isolated from the outside.
Further, be cascading the first quantum dot, the second quantum dot and third amount on substrate from bottom to top
Son point is respectively red light quantum point, green light quantum point and blue light quantum point.
QD-LED packaging body provided by the invention has the advantage that QD- provided by the invention compared with prior art
LED package uses vertical structure, and by three primary colours sandwich package, the independently-powered control of three primary colours shines, and single package body just wraps
Contain three primary colours, required color can be obtained according to demand, compared with the prior art, horizontal occupied area is about original 1/3,
And there is better even light mixing.
Detailed description of the invention
Fig. 1 shows the schematic diagram of the QD-LED packaging body in embodiment 1.
Fig. 2 a shows the schematic diagram that step S1 in embodiment 2 forms conductive layer on substrate.
Fig. 2 b shows the schematic diagram that step S2 in embodiment 2 forms PMMA film layer on the electrically conductive.
Fig. 2 c shows the schematic diagram of step S3 spin coating cathode ITO layer on PMMA film layer in embodiment 2.
Fig. 2 d shows the schematic diagram that step S4 in embodiment 2 prints the first quantum dot layer in cathode ITO layer.
Fig. 2 e shows spin coating PEDOT:PSS layers of the schematic diagram on the first quantum dot layer of step S5 in embodiment 2.
Fig. 2 f shows the schematic diagram that step S6 in embodiment 2 deposits positive ITO layer on PEDOT:PSS layer.
Fig. 2 g shows step S7 in embodiment 2 and sputters showing for silicon dioxide layer in the positive ITO layer of the first quantum dot
It is intended to.
Fig. 2 h shows the schematic diagram of step S8 spin coating PMMA film layer in silicon dioxide layer in embodiment 2.
Fig. 2 i shows step S9 in embodiment 2 and sequentially forms the second quantum dot and third quantum dot on the first quantum dot
Schematic diagram afterwards.
Fig. 3 shows the schematic diagram of QD-LED packaging body made from step S10 in embodiment 2.
Specific embodiment
To further illustrate that each embodiment, the present invention are provided with attached drawing.These attached drawings are that the invention discloses one of content
Point, mainly to illustrate embodiment, and the associated description of specification can be cooperated to explain the operation principles of embodiment.Cooperation ginseng
These contents are examined, those of ordinary skill in the art will be understood that other possible embodiments and advantages of the present invention.In figure
Component be not necessarily to scale, and similar component symbol is conventionally used to indicate similar component.
Now in conjunction with the drawings and specific embodiments, the present invention is further described.
Embodiment 1
As shown in Figure 1, the present invention provides a kind of QD-LED packaging body, the QD-LED packaging body include substrate 1 and
Be cascading the first quantum dot 2, the second quantum dot 3 and third quantum dot 4 on substrate from bottom to top, has on substrate 1
There are a cathode 10 and three anodes 12 (three anodes are respectively 12a, 12b and 12c).
Wherein, the negative electrode of the first quantum dot 2, the second quantum dot 3 and third quantum dot 4 with the cathode 10 on substrate 1
Electrical connection, i.e. the first quantum dot 2, the second quantum dot 3 and third quantum dot 4 share cathode, the first quantum dot 2, the second quantum dot 3
It is electrically connected respectively with the one of three anodes 12 on substrate 1 with the positive electrode of third quantum dot 4, and the first quantum dot 2, second
Quantum dot 3 and third quantum dot 4 are respectively the one of red light quantum point, green light quantum point and blue light quantum point.
In the present embodiment, the positive electrode of the first quantum dot 2 is connect with anode 12a, the positive electrode of the second quantum dot 3 with just
The positive electrode of pole 12b connection, third quantum dot 4 is connect with anode 12c.In addition, be red light quantum point with the first quantum dot 2, the
Two quantum dots 3 are green light quantum point, and third quantum dot 4 is is illustrated for blue light quantum point, and this arrangement mode
It is preferential scheme, i.e., the light that lower layer's quantum dot issues can't be to impacting, because of lower layer's quantum dot in the two on upper layer
The energy of the light of sending is not sufficient to excite the quantum dot on upper layer, it is ensured that the degree of purity of color.
As shown in Figure 1, due to the first quantum dot 2, the second quantum dot 3 and the setting stacked on top of one another of third quantum dot 4,
Each QD-LED packaging body includes three primary colours, relative to the existing QD-LED being individually encapsulated, QD- provided by the invention
When in use, the area of pixel is all contracted to original 1/3 to LED package, and has better even light mixing.
And it is further preferred that by silica gel 5, silica gel 5 makes the first quantum dot 2,3 and of the second quantum dot for also encapsulation on substrate 1
Third quantum dot 4 is isolated from the outside, and to guarantee its air-tightness, prevents steam and air from entering to inside, causes to quantum dot
It influences.
Embodiment 2
A kind of production method for making the QD-LED packaging body in embodiment 1, the system are disclosed in the present embodiment
Make method the following steps are included:
S1, with reference to Fig. 2 a, prepared substrate 1 first cleans substrate 1, is dried, in the present embodiment substrate 1
For ceramic substrate, mirror-like silver conductive layer is electroplated on the top surface of substrate 1, the thickness of conductive layer is about 100 microns, the conductive layer packet
Mutually isolated a negative regions 10 and three positive pole zones 12 ' (12a ', 12b ' and 12c ') are included, using as subsequent quantum dot
The anode and cathode of connection, mirror surface silver conductive layer is first is that can increase its planarization, second is that reflectivity can be improved, to improve out
Light efficiency；
S2, with reference to Fig. 2 b, spin coating PMMA film layer 13 on the electrically conductive, specifically using U.S. Micro Chem company
PMMA ethyl lactate solution is dripped on substrate, with spin coater first with slow-speed of revolution 600rpm spin coating 15 seconds, after with high revolving speed 2000rpm
Spin coating 30 seconds, then drying formed a film (drying temperature is 90 DEG C, time 2 h), and film thickness is about 50nm, and the PMMA film layer is as Jie
Electric layer, and (RIE O is etched on corresponding negative regions 10 and positive pole zone 12 '2Etching) go out to be open, using as subsequent quantum dot
Electrode connection window；
S3, with reference to Fig. 2 c, the spin coating cathode ITO layer 14 on PMMA film layer 13, and make the cathode ITO layer 14 and negative regions
10 are electrically connected and are electrically isolated with all positive pole zones 12 ', and In-Sn solution drop is specifically used spin coater on PMMA film layer 13
First with slow-speed of revolution 500rpm spin coating 20 seconds, after with revolving speed 3000rpm spin coating 60 seconds high, then drying film forming is (dry at 80 DEG C
10min is heat-treated 5min at 150 DEG C), it repeats the above steps, spin coating is multiple, to obtain the cathode ITO layer 14 of about 60nm thickness, most
The ITO layer etched away in positive pole zone 12 ' afterwards (is protected the ITO layer on negative regions 10 with protective glue band, with zinc powder plus salt
Acid etches away the ITO layer in positive pole zone 12 ')；
S4, with reference to Fig. 2 d, the first quantum dot layer 20 is printed in cathode ITO layer 14, in the present embodiment the first quantum dot
Layer 20 using star purple (Shanghai) new material technology development corporation, Ltd. model OA-26160-10 InP/ZnS quantum dot
(using InP as core, ZnS is shell, and partial size is 2~6nm), the wavelength of the emission peak of the quantum dot is 600 ± 10nm, as red
Light quanta point layer, the thickness of first quantum dot layer 20 are about 50nm；
S5, with reference to Fig. 2 e, the spin coating PEDOT:PSS layer 15 on the first quantum dot layer 20 is (poly- by PEDOT:PSS aqueous solution
Styrene sulfonate) be placed on the first quantum dot layer 20, with spin coater first with slow-speed of revolution 500rpm spin coating 10 seconds, after with high revolving speed
2500rpm spin coating 60 seconds, then drying formed a film (being heat-treated 10min at 120 DEG C)；
S6, with reference to Fig. 2 f, deposit positive ITO layer 16 in PEDOT:PSS layer 15, and make the anode ITO layer and a positive polar region
Domain 12a ' is electrically connected and is electrically isolated with other positive pole zone 12b ' and 12c ' and negative regions 10, the first quantum dot is made
2；Positive ITO layer 16 is deposited in PEDOT:PSS layer 15 specifically in a manner of magnetron sputtering, the thickness of the anode ITO layer 16 is about
For 60nm, negative regions and other positive pole zones cover in advance, etch away overcover after the completion of sputtering.
S7, with reference to Fig. 2 g, silicon dioxide layer 17 is sputtered in the positive ITO layer 16 of the first quantum dot, specifically with magnetic control
The mode of sputtering deposits the silicon dioxide layer 17 of one layer of about 20nm thickness in the positive ITO layer 16 of the first quantum dot, using as exhausted
Edge layer；
S8, with reference to Fig. 2 h, (the spin coating PMMA film in the step and step 2b of spin coating PMMA film layer 18 in silicon dioxide layer 17
Process it is identical), and repeat step S3~S6, to be made the second quantum dot 3, second quantum dot 3 using star it is purple (on
Sea) (using InP as core, ZnS is shell for the InP/ZnS quantum dot of new material technology development corporation, Ltd. model OA-26152-10
Layer, partial size are 2~6nm), the wavelength of the emission peak of the quantum dot is 520 ± 10nm, as green light quantum point layer, second amount
The thickness of son point layer 30 is about 50nm；
S9, step S7 and S8 are repeated, third quantum dot 4 as shown in fig. 2i is made, wherein third quantum dot 4 is used
It is that the ZnSe/ZnS quantum dot of star purple (Shanghai) new material technology development corporation, Ltd. model OA-21844-10 (is with ZnSe
Core, ZnS are shell, and partial size is 2~6nm), the wavelength of the emission peak of the quantum dot is 440 ± 10nm, as blue light quantum point
Layer, the thickness of second quantum dot layer 40 is about 50nm；
In the present embodiment, it is preferred that further include step S10, is packaged processing with silica gel 5 after completion step S9, with
So that the first quantum dot 2, the second quantum dot 3 and third quantum dot 4 is isolated from the outside, to guarantee its air-tightness, prevent steam and
Air enters to inside, impacts to quantum dot, and QD-LED packaging body as shown in Figure 3 is made, encapsulation can be dispensing
Or moding technique.
The QD-LED packaging body due to the first quantum dot 2, the second quantum dot 3 and the setting stacked on top of one another of third quantum dot 4,
Therefore each QD-LED packaging body includes three primary colours, provided by the invention relative to the existing QD-LED being individually encapsulated
When in use, the area of pixel is all contracted to original 1/3 to QD-LED packaging body, and has better even light mixing.
Although specifically showing and describing the present invention in conjunction with preferred embodiment, those skilled in the art should be bright
It is white, it is not departing from the spirit and scope of the present invention defined by the appended claims, it in the form and details can be right
The present invention makes a variety of changes, and is protection scope of the present invention.
Claims (5)
1. a kind of production method of QD-LED packaging body, which comprises the following steps:
S1, prepared substrate, form conductive layer on substrate, and conductive layer includes mutually isolated a negative regions and three anodes
Region；
S2, on the electrically conductive spin coating PMMA film layer；
S3, the spin coating cathode ITO layer on PMMA film layer, and make the cathode ITO layer be electrically connected with negative regions and with all anodes
Region is electrically isolated；
S4, the first quantum dot layer is printed in cathode ITO layer；
S5, spin coating PEDOT:PSS layers on the first quantum dot layer；
S6, positive ITO layer is deposited on PEDOT:PSS layer, and make the anode ITO layer be electrically connected with a positive pole zone and with it is other
Positive pole zone and negative regions are all electrically isolated, the first quantum dot is made；
S7, silicon dioxide layer is sputtered in the positive ITO layer of the first quantum dot；
S8, the spin coating PMMA film layer in silicon dioxide layer, and step S3~S6 is repeated, the second quantum dot is made；
S9, step S7 and S8 are repeated, third quantum dot is made；
Wherein, the first above-mentioned quantum dot, the second quantum dot and third quantum dot be respectively red light quantum point, green light quantum point and
Blue light quantum point first, the cathode ITO layer of the first quantum dot, the second quantum dot and third quantum dot is electrically connected with negative regions
It connects, positive ITO layer is electrically connected with the one of three positive pole zones.
2. manufacturing method according to claim 1, it is characterised in that: further include step S10, use silica gel after completing step S9
It is packaged processing, so that the first quantum dot, the second quantum dot and third quantum dot are isolated from the outside.
3. a kind of QD-LED packaging body, it is characterised in that: be cascading on substrate including substrate and from bottom to top
First quantum dot, the second quantum dot and third quantum dot have a cathode and three anodes, the first quantum dot, second on substrate
The negative electrode of quantum dot and third quantum dot is electrically connected with the cathode on substrate, the first quantum dot, the second quantum dot and third
The positive electrode of quantum dot is electrically connected with three positive one on substrate respectively, and the first quantum dot, the second quantum dot and
Three quantum dots are respectively the one of red light quantum point, green light quantum point and blue light quantum point.
4. QD-LED packaging body according to claim 3, it is characterised in that: by silica gel, silica gel makes for also encapsulation on substrate
One quantum dot, the second quantum dot and third quantum dot are isolated from the outside.
5. QD-LED packaging body according to claim 3, it is characterised in that: be cascading on substrate from bottom to top
The first quantum dot, the second quantum dot and third quantum dot be respectively red light quantum point, green light quantum point and blue light quantum point.
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| CN201811085668.5A CN109244259A (en) | 2018-09-18 | 2018-09-18 | A kind of QD-LED packaging body and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109768175A (en) * | 2019-01-09 | 2019-05-17 | 泉州市康电光电科技有限公司 | A kind of new packaging method of QLED |
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| CN1742518A (en) * | 2003-01-29 | 2006-03-01 | 株式会社半导体能源研究所 | Electroluminescence device |
| US20090090903A1 (en) * | 2007-10-08 | 2009-04-09 | Samsung Electronics Co., Ltd. | Cmos image sensor having thiophene derivatives |
| CN102169885A (en) * | 2010-01-29 | 2011-08-31 | 日本冲信息株式会社 | Semiconductor light emitting device and image forming apparatus |
| CN107017312A (en) * | 2015-09-17 | 2017-08-04 | 三星电子株式会社 | Photoelectric device and the electronic installation including the photoelectric device |
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2018
- 2018-09-18 CN CN201811085668.5A patent/CN109244259A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1293425A (en) * | 1994-12-13 | 2001-05-02 | 普林斯顿大学理事会 | Multi colour display device |
| CN1742518A (en) * | 2003-01-29 | 2006-03-01 | 株式会社半导体能源研究所 | Electroluminescence device |
| US20090090903A1 (en) * | 2007-10-08 | 2009-04-09 | Samsung Electronics Co., Ltd. | Cmos image sensor having thiophene derivatives |
| CN102169885A (en) * | 2010-01-29 | 2011-08-31 | 日本冲信息株式会社 | Semiconductor light emitting device and image forming apparatus |
| CN107017312A (en) * | 2015-09-17 | 2017-08-04 | 三星电子株式会社 | Photoelectric device and the electronic installation including the photoelectric device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109768175A (en) * | 2019-01-09 | 2019-05-17 | 泉州市康电光电科技有限公司 | A kind of new packaging method of QLED |
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Application publication date: 20190118 |