CN109239787A - A kind of terahertz wave detector based on array plaster antenna - Google Patents
A kind of terahertz wave detector based on array plaster antenna Download PDFInfo
- Publication number
- CN109239787A CN109239787A CN201811094351.8A CN201811094351A CN109239787A CN 109239787 A CN109239787 A CN 109239787A CN 201811094351 A CN201811094351 A CN 201811094351A CN 109239787 A CN109239787 A CN 109239787A
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- antenna
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- transmission line
- field effect
- matching network
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
- G01V3/00—Electric or magnetic prospecting or detecting; Measuring magnetic field characteristics of the earth, e.g. declination, deviation
- G01V3/12—Electric or magnetic prospecting or detecting; Measuring magnetic field characteristics of the earth, e.g. declination, deviation operating with electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q23/00—Antennas with active circuits or circuit elements integrated within them or attached to them
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Remote Sensing (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electromagnetism (AREA)
- Environmental & Geological Engineering (AREA)
- Geology (AREA)
- General Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Geophysics (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
Abstract
The invention discloses a kind of terahertz wave detector based on array plaster antenna, including array antenna, transmission line matching network and field effect transistor, the array antenna connects field effect transistor through transmission line matching network；The array antenna is made of four identical on piece rectangular patch antennas and feeding network, and four paster antennas are arranged with 2 × 2 array formats, and four paster antennas are connected by feeding network to each other；The transmission line matching network uses the T-type impedance matching network being made of three sections of transmission lines；The source electrode of the field effect transistor is connect with transmission line matching network, and drain electrode is used as signal output end, and grid is separately connected the quarter-wave transmission line of bias voltage source and open circuit.The present invention can effectively solve the problems, such as that transimission power is not high between THz wave receiving antenna gain not high caused antenna and field effect transistor, realizes the effect of terahertz detector high-responsivity.
Description
Technical field
The present invention relates to THz wave detection technology fields, and more specifically, it relates to one kind to be based on array plaster antenna
Terahertz wave detector.
Background technique
Terahertz Technology is considered as " one of the ten big technologies that future changes the world ".Currently, in the world to Terahertz spoke
The electromagnetic wave technology of ejected wave section two sides, the i.e. research level of infrared technique and microwave technology are highly developed.Have due to lacking
The terahertz emission of effect generates and detection means, and this wave band is neither entirely appropriate is handled with optical theory, also not exclusively
Be suitble to studied with microwave electron theory, so at present scientific circles for the wave band understanding always than relatively limited, then too
Hertz becomes the frequency window that the last one in electromagnetic spectrum is not studied comprehensively, so that it is known as in electromagnetic spectrum in the industry
" Terahertz gap (terahertz gap) ".Since before more than 20 years, with terahertz emission source and terahertz detector
Come out one after another and it is fast-developing, the research and application of Terahertz Technology just have very fast development, because of the amount of terahertz emission
Sub- energy is very low, and signal-to-noise ratio is very high, and frequency spectrum is extremely wide, has a series of special properties, examines in basic research, nuclear technology, medical treatment
The fields such as disconnected, safety detection, radio astronomy, image objects, wide-band mobile communication and defense military show great scientific valence
Value and practical prospect, at the same time, otherwise engineer application potentiality also attract attention.It is had proposed in the world based on field at present
The panel detector structure of effect transistor, the structure are that the terahertz wave signal for receiving on piece paster antenna is transferred to N-type gold
Category-Oxide-Semiconductor Field effect transistor (NMOSFET) source electrode, and at antenna and N-type metal-oxide-is partly led
The grid of body field effect transistor connects fixed potential respectively, in addition, in order to keep the impedance matching between antenna and transistor good, also
The design of impedance matching network has been carried out between antenna and transistor.And in order to eliminate bias voltage to antenna and transistor
The influence of impedance matching has also terminated a quarter-wave transmission line in biasing.The shortcomings that structure is to receive terahertz
The hereby gain of the paster antenna of signal and inefficient, the signal power that THz source cannot be made to enter antenna reach maximum
Change, so that N-type metal-oxide semiconductor fieldeffect transistor cannot obtain maximized terahertz signal power, and hinders
The design of anti-matching network is not suitable in high frequency.
In conclusion in order to overcome the terahertz wave signal power transmission for using rectangular patch antenna to couple to N-type metal-
Less problem in Oxide-Semiconductor Field effect transistor solves function there is an urgent need to propose a kind of rectangular patch array antenna
Rate transmits lesser problem, realizes higher power transmission between antenna and field effect transistor.
Summary of the invention
Purpose of the invention is to overcome the shortcomings in the prior art, provides a kind of terahertz based on array plaster antenna
Hereby wave detector can be solved effectively between THz wave receiving antenna gain not high caused antenna and field effect transistor
The not high problem of transimission power realizes the effect of terahertz detector high-responsivity.
The purpose of the present invention is what is be achieved through the following technical solutions.
Terahertz wave detector based on array plaster antenna of the invention, including array antenna, transmission line matching network
And field effect transistor, the array antenna connect field effect transistor through transmission line matching network；The array antenna is by four
A identical on piece rectangular patch antenna and feeding network form, and four paster antennas are arranged with 2 × 2 array formats, and four
A paster antenna is connected by feeding network to each other；The transmission line matching network uses the T-type being made of three sections of transmission lines
Impedance matching network；The source electrode of the field effect transistor is connect with transmission line matching network, and drain electrode is used as signal output end, grid
Pole is separately connected the quarter-wave transmission line of bias voltage source and open circuit.
The two of them paster antenna of the array antenna is horizontal positioned along a direction, other two paster antenna with
The first two paster antenna along horizontal symmetry axis mirror image place, then with one by the feeding network that transmission line forms connect this four
A paster antenna, and export from feeding network center the signal of entire array antenna.
The field effect transistor uses N-type metal-oxide semiconductor fieldeffect transistor.
Compared with prior art, the beneficial effects brought by the technical solution of the present invention are as follows:
(1) present invention by 2 × 2 array antenna can increase array antenna received terahertz wave signal directionality and
Gain increases probe response degree to improve the terahertz signal power that field effect transistor receives；
(2) transmission designed between array antenna and N-type metal-oxide semiconductor fieldeffect transistor in the present invention
The power transmission efficiency of terahertz wave signal can be improved in lines matching network, also functions to the effect for increasing probe response degree.
Detailed description of the invention
Fig. 1 is that the present invention is based on the schematic diagrams of the terahertz wave detector of array plaster antenna.
Fig. 2 is the schematic diagram of array antenna in the present invention.
Appended drawing reference: MOS field effect transistor, VGBias voltage source, M feeding network.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific example, and referring to attached
Figure, the present invention is described in further detail.
Terahertz wave detector based on array plaster antenna of the invention, as shown in Figure 1, including array antenna, transmission
Lines matching network and field effect transistor M OS, the array antenna connect field effect transistor through transmission line matching network.Its
In, the field effect transistor uses N-type metal-oxide semiconductor fieldeffect transistor.
As shown in Fig. 2, the array antenna is by four identical on piece rectangular patch antennas and feeding network M group
At.Four paster antennas arrange that four paster antenna A pass through feeding network M to each other and connect with 2 × 2 array formats.In order to most
Smallization array antenna area, two of them paster antenna (A1, A2) is horizontal positioned along a direction, other two paster antenna
(A3, A4) and the first two paster antenna (A1, A2) is placed along horizontal symmetry axis mirror image, is then made of with one transmission line
Feeding network M connects this four paster antennas, and the signal of entire array antenna is exported from feeding network center.Radiofrequency signal is logical
It crosses feeding network center and gives four antennas, signal carries out the variation of phase in transmission process by intermediate feeding network M,
Reach maximum to reach the amplitude of the electromagnetic wave at the certain point of far field, to improve the directionality and gain of array antenna.
Array antenna is used to receive terahertz wave signal, and the terahertz wave signal received is transmitted effect of showing up by array antenna
The source S of transistor MOS is answered, in order to enable being transferred to the terahertz signal power in field effect transistor M OS from array antenna
Reach maximization, transmission line matching network, the biography are increased between array antenna and the source S of field effect transistor M OS
Defeated lines matching network uses the T-type impedance matching network being made of three sections of transmission lines (TL1, TL2, TL3).Due to field effect transistor
The source S input impedance real and imaginary parts of pipe MOS are all very big, and the input impedance at the feeding network center of array antenna is much smaller than
The source S input impedance of field effect transistor M OS, so the transmission being arranged between array antenna and field effect transistor M OS
The impedance matching of the two may be implemented by the transformation of impedance three times for lines matching network, to realize array antenna to field-effect crystalline substance
Power between body pipe MOS maximizes transmission.
The source S of the field effect transistor M OS is connect with transmission line matching network, and drain D is as signal output end, grid
Pole G is separately connected bias voltage source VGWith the quarter-wave transmission line of open circuit.Wherein, quarter-wave transmission line conduct
Quarter-wave impedance transformer, quarter-wave transmission line one end are connect with the grid G of field effect transistor M OS,
Other end open circuit.After the THz signal of array antenna coupling is transferred in field effect transistor M OS from transmission line matching network,
The non-linear rectification of field effect transistor M OS channel can read THz signal rectification at fainter direct current signal, thus real
The function can be realized in the detection of existing terahertz signal, single NMOSFET.
Array of designs antenna: the directionality of single antenna is limited, when using array antenna, travels to the electromagnetism of the same area
Wave makes this because principle of stacking can generate vector superposed by adjusting the distance between feeding network and four paster antennas d
Same-phase of the superimposed field in same receiving area increases, and amplitude becomes larger, to promote the directionality of array antenna totality, increases and increases
Benefit.When giving a RF excitation at port 1, can be generated between port 2 and port 4, between port 3 and port 5 respectively
The phase difference of one 180 degree, so that the amplitude in the superimposed field of far field somewhere generation becomes larger.
Design impedance matching network: the present invention receives terahertz wave signal by array antenna, and array antenna will receive
To terahertz wave signal be transferred to the source S of field effect transistor M OS, in order to enable the THz wave that array antenna received arrives
Signal power maximization is transferred to field effect transistor M OS, increases between array antenna and the source S of field effect transistor M OS
Add a transmission line matching network, so that the power transmission maximized of array antenna and field effect transistor M OS.
It designs detector: selecting N-type metal-oxide semiconductor fieldeffect transistor as exploring block, pass through its ditch
The non-linear rectification in road is to obtain detectable signal.The external bias voltage source V of the grid G of scene effect transistor MOSGSo that field
Effect transistor MOS channel is opened, and the quarter-wave transmission line of an open circuit is connect at this grid G, is eliminated it and is poised for battle
The influence of impedance matching between array antenna and field effect transistor M OS.
Although function and the course of work of the invention are described above in conjunction with attached drawing, the invention is not limited to
Above-mentioned concrete function and the course of work, the above mentioned embodiment is only schematical, rather than restrictive, ability
The those of ordinary skill in domain under the inspiration of the present invention, is not departing from present inventive concept and scope of the claimed protection situation
Under, many forms can also be made, all of these belong to the protection of the present invention.
Claims (3)
1. a kind of terahertz wave detector based on array plaster antenna, which is characterized in that including array antenna, transmission lines matching
Network and field effect transistor, the array antenna connect field effect transistor through transmission line matching network；The array antenna
It is made of four identical on piece rectangular patch antennas and feeding network, four paster antennas are with 2 × 2 array format cloth
It sets, four paster antennas are connected by feeding network to each other；The transmission line matching network is used and is made of three sections of transmission lines
T-type impedance matching network；The source electrode of the field effect transistor is connect with transmission line matching network, and drain electrode is exported as signal
End, grid are separately connected the quarter-wave transmission line of bias voltage source and open circuit.
2. the terahertz wave detector according to claim 1 based on array plaster antenna, which is characterized in that the array
The two of them paster antenna of antenna is horizontal positioned along a direction, other two paster antenna and the first two paster antenna edge
Horizontal symmetry axis mirror image place, this four paster antennas are then connected by the feeding network that transmission line forms with one, and from
Feeding network center exports the signal of entire array antenna.
3. the terahertz wave detector according to claim 1 based on array plaster antenna, which is characterized in that the field effect
Answer transistor using N-type metal-oxide semiconductor fieldeffect transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811094351.8A CN109239787A (en) | 2018-09-19 | 2018-09-19 | A kind of terahertz wave detector based on array plaster antenna |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811094351.8A CN109239787A (en) | 2018-09-19 | 2018-09-19 | A kind of terahertz wave detector based on array plaster antenna |
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| CN109239787A true CN109239787A (en) | 2019-01-18 |
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| CN201811094351.8A Pending CN109239787A (en) | 2018-09-19 | 2018-09-19 | A kind of terahertz wave detector based on array plaster antenna |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110380187A (en) * | 2019-06-05 | 2019-10-25 | 广东工业大学 | Terahertz detector and antenna design method based on DRA and N × M NMOSFET array |
| CN112230297A (en) * | 2020-09-03 | 2021-01-15 | 广东工业大学 | Detector based on NxM multi-frequency antenna array and SBD array |
| CN112284526A (en) * | 2020-09-03 | 2021-01-29 | 广东工业大学 | NxM terahertz detector array imaging system based on multi-frequency antenna structure |
| CN112284532A (en) * | 2020-09-03 | 2021-01-29 | 广东工业大学 | SBD detector based on NxM multi-frequency terahertz antenna array |
| CN113193465A (en) * | 2020-01-14 | 2021-07-30 | 中国科学院半导体研究所 | Terahertz wave radiation source |
| CN114719967A (en) * | 2021-01-04 | 2022-07-08 | 中国科学院沈阳自动化研究所 | Terahertz wave detector based on field effect transistor and double-antenna structure |
| CN114725675A (en) * | 2021-01-04 | 2022-07-08 | 中国科学院沈阳自动化研究所 | Terahertz wave detector based on field effect transistor and antenna structure |
| CN115694660A (en) * | 2022-09-13 | 2023-02-03 | 北京无线电测量研究所 | T-shaped matching resonance enhanced photoelectric detector receiving network |
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| CN108306101A (en) * | 2018-01-29 | 2018-07-20 | 厦门大学嘉庚学院 | The terahertz wave band acetylene black gradually wide array antenna of variant Fractal |
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| US7504999B2 (en) * | 2006-08-22 | 2009-03-17 | Raytheon Company | Amplified patch antenna reflect array |
| CN101593866A (en) * | 2009-06-30 | 2009-12-02 | 华南理工大学 | The dielectric resonance UHF RFID label antenna that has T type matching network |
| CN102098243A (en) * | 2010-12-29 | 2011-06-15 | 中兴通讯股份有限公司 | Antenna impedance matching device and method |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110380187A (en) * | 2019-06-05 | 2019-10-25 | 广东工业大学 | Terahertz detector and antenna design method based on DRA and N × M NMOSFET array |
| CN113193465A (en) * | 2020-01-14 | 2021-07-30 | 中国科学院半导体研究所 | Terahertz wave radiation source |
| CN113193465B (en) * | 2020-01-14 | 2022-11-08 | 中国科学院半导体研究所 | Terahertz wave radiation source |
| CN112284532B (en) * | 2020-09-03 | 2023-10-03 | 广东工业大学 | SBD detector based on N×M multi-frequency terahertz antenna array |
| CN112230297A (en) * | 2020-09-03 | 2021-01-15 | 广东工业大学 | Detector based on NxM multi-frequency antenna array and SBD array |
| CN112284526A (en) * | 2020-09-03 | 2021-01-29 | 广东工业大学 | NxM terahertz detector array imaging system based on multi-frequency antenna structure |
| CN112284532A (en) * | 2020-09-03 | 2021-01-29 | 广东工业大学 | SBD detector based on NxM multi-frequency terahertz antenna array |
| CN112230297B (en) * | 2020-09-03 | 2024-04-09 | 广东工业大学 | Detector based on N×M multi-frequency antenna array and SBD array |
| CN112284526B (en) * | 2020-09-03 | 2023-10-03 | 广东工业大学 | N X M terahertz detector array imaging system based on multi-frequency antenna structure |
| CN114725675A (en) * | 2021-01-04 | 2022-07-08 | 中国科学院沈阳自动化研究所 | Terahertz wave detector based on field effect transistor and antenna structure |
| CN114719967A (en) * | 2021-01-04 | 2022-07-08 | 中国科学院沈阳自动化研究所 | Terahertz wave detector based on field effect transistor and double-antenna structure |
| CN115694660B (en) * | 2022-09-13 | 2023-09-22 | 北京无线电测量研究所 | T-shaped matching resonance enhanced photoelectric detector receiving network |
| CN115694660A (en) * | 2022-09-13 | 2023-02-03 | 北京无线电测量研究所 | T-shaped matching resonance enhanced photoelectric detector receiving network |
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