CN109188729B - Semiconductor metamaterial wave plate and preparation method thereof - Google Patents
Semiconductor metamaterial wave plate and preparation method thereof Download PDFInfo
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- CN109188729B CN109188729B CN201811119787.8A CN201811119787A CN109188729B CN 109188729 B CN109188729 B CN 109188729B CN 201811119787 A CN201811119787 A CN 201811119787A CN 109188729 B CN109188729 B CN 109188729B
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
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Abstract
The invention discloses a semiconductor metamaterial wave plate and a preparation method thereof. The semiconductor metamaterial wave plate provided by the invention is formed by alternately stacking a plurality of layers of intrinsic semiconductor layers and a plurality of layers of doped semiconductor layers; the thickness of the intrinsic semiconductor layer and the doped semiconductor layer in the direction perpendicular to the layer surface is less than one quarter of the resonance wavelength. Wherein free carriers inside the doped semiconductor layer provide carriers for electromagnetic resonance. When the component of the incident electromagnetic wave in the direction perpendicular to the layer plane is not zero, an electromagnetic resonance response is generated. The invention utilizes the strong electromagnetic resonance effect of the metamaterial, reduces the volume of the wave plate, can be integrated with other optical devices, and is beneficial to improving the integration level of an optical system. The invention adopts the doped semiconductor to provide a carrier for the electromagnetic resonance of a current carrier, reduces the absorption loss of the wave plate, improves the conversion efficiency of the wave plate, has simple structure, is easier to integrate with other semiconductor devices, and is easy to prepare.
Description
Technical Field
The invention relates to the technical field of optical devices, in particular to a semiconductor metamaterial wave plate and a preparation method thereof.
Background
In the field of materials, a composite metamaterial is a metamaterial with a three-dimensional structure, and is different from common periodic unit metal metamaterials such as a Chinese character 'hui', a Chinese character 'C', a Chinese character 'I', and the like in structure, the layered composite metamaterial is a layered metamaterial formed by multiple layers of different materials, and the thickness of each layer is smaller than the wavelength of research. In addition, the electromagnetic Theory of the common periodic unit metal metamaterial is mainly based on the LC circuit resonance Theory, and the electromagnetic characteristic of the composite metamaterial is determined by the Effective Medium Theory (EMT).
Conventional waveplates are mostly prepared from optical crystals having birefringent properties. The electromagnetic response of the natural crystal to electromagnetic waves is weak, so that the traditional wave plate has large volume and high cost and is inconvenient for optical integration. The novel metamaterial wave plate based on the electromagnetic resonance effect has a small size, and the working wave band and the working bandwidth can be flexibly designed, so that the metamaterial wave plate attracts the wide attention of people. The wave plate based on the dielectric metamaterial can realize ultra-wide working bandwidth and working efficiency close to 100%, but most of the wave plates of the dielectric metamaterial use silicon as a working medium. Because of the limitation of the forbidden bandwidth of silicon, the wave plate can not keep high-efficiency work in the wave band above 300 terahertz. The metal-based metamaterial wave plate is also a common metamaterial wave plate, although the size is smaller, most of the metal metamaterial wave plates in infrared and visible light bands have high loss and generally low conversion efficiency.
Disclosure of Invention
The invention provides the semiconductor metamaterial wave plate and the preparation method thereof, and the technical effects of low loss, high conversion efficiency and wide wave band are realized.
The invention provides a semiconductor metamaterial wave plate, which comprises: an intrinsic semiconductor layer and a doped semiconductor layer; the intrinsic semiconductor layer is cross-stacked with the doped semiconductor layer; the thickness of the intrinsic semiconductor layer and the thickness of the doped semiconductor layer are both smaller than one quarter of the wavelength of incident light.
Further, the thickness of the intrinsic semiconductor layer is equal to that of the doped semiconductor layer.
Further, the thickness of the intrinsic semiconductor layer is not equal to the thickness of the doped semiconductor layer.
Furthermore, the thickness of the single layer of the intrinsic semiconductor layer and the thickness of the single layer of the doped semiconductor layer are both between 80nm and 5000 nm.
Further, the total number of layers of the intrinsic semiconductor layer and the doped semiconductor layer is at least 50.
Further, the intrinsic semiconductor layer and the doped semiconductor layer are constructed by the same chemical element material.
Further, the intrinsic semiconductor layer and the doped semiconductor layer are made of different chemical element materials.
Further, the doping type of the doped semiconductor layer is N-type doping and/or P-type doping.
The preparation method of the semiconductor metamaterial wave plate provided by the invention comprises the following steps: firstly, preparing a first layer of intrinsic semiconductor through epitaxial growth, then growing a first layer of doped semiconductor on the first layer of intrinsic semiconductor, and then epitaxially growing a second layer of intrinsic semiconductor on the first layer of doped semiconductor; and the like, so that the intrinsic semiconductor layer and the doped semiconductor layer which are stacked in a crossed mode are obtained.
Further, after the epitaxial growth is used for preparing the first layer of intrinsic semiconductor, the method further comprises the following steps:
milling the first layer of intrinsic semiconductor.
One or more technical schemes provided by the invention at least have the following technical effects or advantages:
the semiconductor metamaterial wave plate provided by the invention is formed by alternately stacking a plurality of layers of intrinsic semiconductor layers and a plurality of layers of doped semiconductor layers; the thickness of the intrinsic semiconductor layer and the doped semiconductor layer in the direction perpendicular to the layer surface is less than one quarter of the resonance wavelength. Wherein free carriers inside the doped semiconductor layer provide carriers for electromagnetic resonance. When the component of the incident electromagnetic wave in the direction perpendicular to the layer plane is not zero, an electromagnetic resonance response is generated. The working wavelength of the composite semiconductor metamaterial wave plate is regulated and controlled by regulating the thicknesses of the intrinsic semiconductor layer and the doped semiconductor layer in the direction vertical to the layer surface. By adjusting the relative thickness of the intrinsic semiconductor layer or the doped semiconductor layer, the phase variation of the electromagnetic wave in the direction of the electric field perpendicular to the layer surface can be adjusted, so as to realize the phase difference of 90 degrees between two orthogonal electromagnetic waves. The phase delay between the transmitted light components having polarization directions parallel to and perpendicular to the layer direction, respectively, is adjusted by changing the sizes of the intrinsic semiconductor layer and the doped semiconductor layer and the carrier concentration of the doped semiconductor layer.
Compared with the traditional wave plate based on the optical crystal, the invention utilizes the strong electromagnetic resonance effect of the metamaterial, reduces the volume of the wave plate, can be integrated with other optical devices, and is beneficial to improving the integration level of an optical system.
Compared with the existing metal metamaterial wave plate, the doped semiconductor is adopted to provide a carrier for the electromagnetic resonance of a current carrier, the absorption loss of the wave plate is reduced, the conversion efficiency of the wave plate is improved, and the wave plate is simple in structure, easy to integrate with other semiconductor devices and easy to prepare.
Drawings
Fig. 1 is a schematic diagram of a 45-degree-view perspective structure of a semiconductor metamaterial wave plate according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a semiconductor metamaterial wave plate according to an embodiment of the present invention;
FIG. 3 is a graph of transmission of an incident light component polarized along the x-axis and polarized along the z-axis as a function of wavelength of the incident light in accordance with an embodiment of the present invention;
FIG. 4 is a graph of phase difference between an incident light component polarized in the x-axis direction and polarized in the z-axis direction as a function of wavelength of the incident light in an embodiment of the present invention;
wherein, 1 represents an intrinsic semiconductor layer, 2 represents a doped semiconductor layer, x and y coordinate directions represent the parallel layer direction of the device, and z coordinate direction represents the vertical layer direction of the device.
Detailed Description
The embodiment of the invention provides a semiconductor metamaterial wave plate and a preparation method thereof, and the technical effects of low loss, high conversion efficiency and wide wave band are achieved.
In order to solve the above problems, the technical solution in the embodiments of the present invention has the following general idea:
the semiconductor metamaterial wave plate provided by the embodiment of the invention is formed by alternately stacking a plurality of layers of intrinsic semiconductor layers and a plurality of layers of doped semiconductor layers; the thickness of the intrinsic semiconductor layer and the doped semiconductor layer in the direction perpendicular to the layer surface is less than one quarter of the resonance wavelength. Wherein free carriers inside the doped semiconductor layer provide carriers for electromagnetic resonance. When the component of the incident electromagnetic wave in the direction perpendicular to the layer plane is not zero, an electromagnetic resonance response is generated. The working wavelength of the composite semiconductor metamaterial wave plate is regulated and controlled by regulating the thicknesses of the intrinsic semiconductor layer and the doped semiconductor layer in the direction vertical to the layer surface. By adjusting the relative thickness of the intrinsic semiconductor layer or the doped semiconductor layer, the phase variation of the electromagnetic wave in the direction of the electric field perpendicular to the layer surface can be adjusted, so as to realize the phase difference of 90 degrees between two orthogonal electromagnetic waves. The phase delay between the transmitted light components having polarization directions parallel to and perpendicular to the layer direction, respectively, is adjusted by changing the sizes of the intrinsic semiconductor layer and the doped semiconductor layer and the carrier concentration of the doped semiconductor layer.
Compared with the traditional wave plate based on the optical crystal, the embodiment of the invention utilizes the strong electromagnetic resonance effect of the metamaterial, reduces the volume of the wave plate, can be integrated with other optical devices, and is beneficial to improving the integration level of an optical system.
Compared with the existing metal metamaterial wave plate, the embodiment of the invention adopts the doped semiconductor as the carrier for the electromagnetic resonance of the current carrier, so that the absorption loss of the wave plate is reduced, the conversion efficiency of the wave plate is improved, and the wave plate has a simple structure, is easier to integrate with other semiconductor devices and is easy to prepare.
For better understanding of the above technical solutions, the following detailed descriptions will be provided in conjunction with the drawings and the detailed description of the embodiments.
Referring to fig. 1 and fig. 2, a semiconductor metamaterial wave plate provided by an embodiment of the present invention includes: an intrinsic semiconductor layer 1 and a doped semiconductor layer 2; the intrinsic semiconductor layer 1 and the doped semiconductor layer 2 are stacked alternately; the thickness of the intrinsic semiconductor layer 1 and the doped semiconductor layer 2 is less than a quarter of the wavelength of incident light.
In the present embodiment, under a rectangular coordinate system composed of an x axis, a y axis and a z axis, forward incident light is incident into the semiconductor metamaterial wave plate provided by the embodiments of the present invention along a negative direction of the z axis.
Specifically, the thickness of a single layer of the intrinsic semiconductor layer 1 is equal to that of the doped semiconductor layer 2. Or, the thickness of the intrinsic semiconductor layer 1 is not equal to that of the doped semiconductor layer 2. Of course, the thickness of a single layer of a part of the intrinsic semiconductor layer 1 may be equal to that of the doped semiconductor layer 2, and the thickness of a single layer of another part of the intrinsic semiconductor layer 1 may not be equal to that of the doped semiconductor layer 2.
Further explaining the structure of the semiconductor metamaterial wave plate provided by the embodiment of the invention, the thickness of the single layer of the intrinsic semiconductor layer 1 and the thickness of the single layer of the doped semiconductor layer 2 are both 80nm to 5000 nm.
Specifically, the total number of layers of the intrinsic semiconductor layer 1 and the doped semiconductor layer 2 is at least 50.
To further explain the structure of the semiconductor metamaterial wave plate provided by the embodiment of the present invention, the intrinsic semiconductor layer 1 and the doped semiconductor layer 2 are constructed by the same chemical element material. Alternatively, the intrinsic semiconductor layer 1 and the doped semiconductor layer 2 are constructed of different chemical element materials. Of course, the chemical element materials of the intrinsic semiconductor layer 1 and the doped semiconductor layer 2 may be partially the same, not all the same, or all the different.
In this embodiment, the intrinsic semiconductor may be any common, undoped semiconductor, such as: GaAs, InGaAs, InP, Si, etc.; the doped semiconductor can also be any common, doped semiconductor, such as: doped GaAs, doped InGaAs, doped InP, doped Si, etc. The doping type of the doped semiconductor layer 2 is N-type doping and/or P-type doping. That is, the doping type of the doped semiconductor layer 2 may be both N-type doping and P-type doping, and the doping type of one part of the doped semiconductor may be N-type doping while the doping type of the other part of the doped semiconductor may be P-type doping.
The semiconductor metamaterial wave plate provided by the embodiment of the invention is further described in detail by combining the following specific embodiments:
the doped semiconductor layer 2 in the semiconductor metamaterial wave plate provided by the embodiment of the invention is an N-type GaAs doped layer. Free carrier concentration N of N-type GaAs doped layerd＝5×1018cm-3Thickness h of single-layer GaAs intrinsic semiconductor layer 11And thickness h of single N-type GaAs doping layer2Both are 3 μm, the number of layers in both classes is 50, the length w in the x-direction is 60 μm and the length t in the y-direction is 20 μm. Incident light is incident to the wave plate along the positive direction parallel to the y axis, and the polarization direction and the positive x half axis form an included angle of 45 degrees.
According to the optical principle and the electromagnetic resonance theory, the following results are obtained: incident light polarized in a direction parallel to the layer plane and polarized in a direction perpendicular to the layer planeThe component intensities are the same; in the mid-infrared band, the incident light component along the x-axis direction does not cause an electromagnetic resonance response, and the incident light component along the z-axis direction may produce an electromagnetic resonance response. At this time, further combining the effective medium theory, the thickness h of the intrinsic semiconductor layer 1 is adjusted1And the thickness h of the doped semiconductor layer 22Or doping the semiconductor layer 2 with the carrier concentration ndThe resonance wavelength and the resonance intensity of the metamaterial can be regulated and controlled, and then the transmission component T of the incident light component of the wave plate along the x axis in polarization is obtained through simulation calculationxAnd a transmission component T of the component of light incident along the z-axis at polarizationz(the calculation result is shown in fig. 3), and the transmission component phase difference therebetween (the calculation result is shown in fig. 4). Specifically, as shown in FIG. 3, at an operating wavelength of 18 μm, the transmittance T of the two polarization componentsxAnd TyAre substantially the same. As shown in FIG. 4, the transmission phase difference of the two polarization components is π/2 at the operating wavelength of 18 μm. Therefore, the transmitted light component polarized along the direction of the x axis and the transmitted light component polarized along the direction of the z axis have the same amplitude and are delayed by pi/2 relative to the phase, and the linearly polarized incident light is converted into circularly polarized light after passing through the wave plate, namely the device realizes the function of a quarter-wave plate, and the efficiency of the device is more than 85%.
So far, the present embodiment has been described in detail with reference to the accompanying drawings. From the above description, those skilled in the art should clearly recognize that the semiconductor metamaterial wave plate provided by the embodiments of the present invention. It should be noted that, in the technical solution in the embodiment of the present invention, the quarter-wave plate based on the composite semiconductor metamaterial is verified in a mid-infrared band simulation. According to the size scaling effect, a person skilled in the art can realize the quarter-wave plate with any intermediate infrared wavelength based on the composite semiconductor metamaterial only by simply and properly adjusting the structural parameters and the materials.
The preparation method of the semiconductor metamaterial wave plate provided by the embodiment of the invention comprises the following steps: firstly, preparing a first layer of intrinsic semiconductor through epitaxial growth, then growing a first layer of doped semiconductor on the first layer of intrinsic semiconductor, and then epitaxially growing a second layer of intrinsic semiconductor on the first layer of doped semiconductor; and so on, the intrinsic semiconductor layer 1 and the doped semiconductor layer 2 which are stacked crosswise are obtained.
Specifically, a first layer of doped semiconductor is grown on a first layer of intrinsic semiconductor, comprising:
and growing a first layer of doped semiconductor on the first layer of intrinsic semiconductor by using molecular beams.
Specifically, after the first layer of intrinsic semiconductor is prepared by epitaxial growth, the method further comprises the following steps:
the first layer of intrinsic semiconductor is milled.
Specifically, a first layer of intrinsic semiconductor is milled using a focused ion beam.
[ technical effects ] of
1. The semiconductor metamaterial wave plate provided by the embodiment of the invention is formed by alternately stacking a plurality of layers of intrinsic semiconductor layers 1 and a plurality of layers of doped semiconductor layers 2; the thickness of the intrinsic semiconductor layer 1 and the doped semiconductor layer 2 in the direction perpendicular to the layer plane are both less than a quarter of the resonance wavelength. Wherein free carriers inside the doped semiconductor layer 2 provide carriers for electromagnetic resonance. When the component of the incident electromagnetic wave in the direction perpendicular to the layer plane is not zero, an electromagnetic resonance response is generated. The working wavelength of the composite semiconductor metamaterial wave plate is regulated and controlled by regulating the thicknesses of the intrinsic semiconductor layer 1 and the doped semiconductor layer 2 in the direction vertical to the layer surface. By adjusting the relative thickness of the intrinsic semiconductor layer 1 or the doped semiconductor layer 2, the phase variation of the electromagnetic wave in the direction of the electric field perpendicular to the layer plane can be adjusted, so as to realize the phase difference of 90 degrees between the two orthogonal electromagnetic waves. The phase retardation between the transmitted light components having polarization directions parallel to and perpendicular to the plane direction, respectively, is adjusted by changing the sizes of the intrinsic semiconductor layer 1 and the doped semiconductor layer 2 and the carrier concentration of the doped semiconductor layer 2.
Compared with the traditional wave plate based on the optical crystal, the embodiment of the invention utilizes the strong electromagnetic resonance effect of the metamaterial, reduces the volume of the wave plate, can be integrated with other optical devices, and is beneficial to improving the integration level of an optical system.
Compared with the existing metal metamaterial wave plate, the embodiment of the invention adopts the doped semiconductor as the carrier for the electromagnetic resonance of the current carrier, so that the absorption loss of the wave plate is reduced, the conversion efficiency of the wave plate is improved, and the wave plate has a simple structure, is easier to integrate with other semiconductor devices and is easy to prepare.
2. According to the preparation method provided by the embodiment of the invention, after the first layer of intrinsic semiconductor is prepared through epitaxial growth, the first layer of intrinsic semiconductor is milled, so that the uniform growth of the subsequent doped semiconductor layer is facilitated, and the stability, accuracy and yield of components can be further improved.
In summary, the embodiment of the present invention realizes the selection of the working wavelength of the wave plate and the control of the electromagnetic resonance intensity (phase delay) by adjusting the thickness of the doped layer and the concentration of the free carriers, i.e., the effective working path length and the number of the free carriers in the resonant motion, so that the composite semiconductor metamaterial wave plate provided by the embodiment of the present invention is suitable for a wider waveband range. The embodiment of the invention realizes the function of the quarter-wave plate, and has the advantages of simple structure, small volume, low loss, wide wave band, easy integration, high conversion efficiency and the like.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including the preferred embodiment and all changes and modifications that fall within the scope of the invention.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. A semiconductor metamaterial wave plate, comprising: an intrinsic semiconductor layer and a doped semiconductor layer; the intrinsic semiconductor layer is cross-stacked with the doped semiconductor layer; the thickness of the intrinsic semiconductor layer and the doped semiconductor layer is smaller than one quarter of the wavelength of incident light; the incident light wavelength is the working wavelength of the semiconductor metamaterial wave plate and is the resonance wavelength of the metamaterial formed by crossed stacking of the intrinsic semiconductor layer and the doped semiconductor layer.
2. The semiconductor metamaterial wave plate of claim 1, wherein a thickness of a single layer of the intrinsic semiconductor layer is equal to a thickness of a single layer of the doped semiconductor layer.
3. The semiconductor metamaterial wave plate of claim 1, wherein a thickness of a single layer of the intrinsic semiconductor layer is not equal to a thickness of a single layer of the doped semiconductor layer.
4. The semiconductor metamaterial wave plate of claim 1, wherein the thickness of the single layer of the intrinsic semiconductor layer and the thickness of the single layer of the doped semiconductor layer are both between 80nm and 5000 nm.
5. The semiconductor metamaterial wave plate of claim 4, wherein the total number of layers of the intrinsic semiconductor layer and the doped semiconductor layer is at least 50.
6. The semiconductor metamaterial wave plate of claim 1, wherein the intrinsic semiconductor layer and the doped semiconductor layer are constructed from the same chemical element material.
7. The semiconductor metamaterial wave plate of claim 1, wherein the intrinsic semiconductor layer and the doped semiconductor layer are constructed from different chemical element materials.
8. The semiconductor metamaterial wave plate of claim 1, wherein the doping type of the doped semiconductor layer is N-type doping and/or P-type doping.
9. The method for preparing the semiconductor metamaterial wave plate as claimed in claim 1, comprising: firstly, preparing a first layer of intrinsic semiconductor through epitaxial growth, then growing a first layer of doped semiconductor on the first layer of intrinsic semiconductor, and then epitaxially growing a second layer of intrinsic semiconductor on the first layer of doped semiconductor; and the like, so that the intrinsic semiconductor layer and the doped semiconductor layer which are stacked in a crossed mode are obtained.
10. The method of claim 9, further comprising, after said epitaxially growing produces a first layer of intrinsic semiconductor:
milling the first layer of intrinsic semiconductor.
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