CN109148316A - For accurately determining the monitoring method of plasma etching machine etching chip terminal - Google Patents
For accurately determining the monitoring method of plasma etching machine etching chip terminal Download PDFInfo
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- CN109148316A CN109148316A CN201811042338.8A CN201811042338A CN109148316A CN 109148316 A CN109148316 A CN 109148316A CN 201811042338 A CN201811042338 A CN 201811042338A CN 109148316 A CN109148316 A CN 109148316A
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- etching
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- plasma etching
- terminal
- machine
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a kind of for accurately determining the monitoring method of plasma etching machine etching chip terminal, it is based on plasma etching machine, and observation window is offered at the top of the reaction warehouse of plasma etching machine, and microscope is provided with above observation window, for accurately determining the monitoring method of plasma etching machine etching chip terminal the following steps are included: step 1: chip is put into the reaction warehouse of plasma etching machine；Step 2: the control system of plasma etching machine carries out conventional arrangement and etches chip；Step 3: chip wouldn't be taken out after completing etching process, observes the etching progress of chip in real time through observation window by microscope；And step 4: the etching terminal for chip is determined whether according to the etching progress of chip.Whereby, the monitoring method for accurately judgement plasma etching machine etching chip terminal of the invention, observes etching progress in real time, can accurately determine the terminal of plasma etching machine etching chip.
Description
Technical field
The present invention relates to chip analysis fields, especially with regard to one kind for accurately determining plasma etching machine etching
The monitoring method of chip terminal.
Background technique
Chip is to be made of the metal wiring structure of multilayer and medium through hole layer structure, and metal wiring layer is several layers phase
Like structure, medium and through-hole are between every adjacent two layers metal.Dielectric of the medium as metal interlevel, different layers metal
Connection is realized by the through-hole that tungsten is done.The dielectric layer of top layer without through-hole and the relatively other layers of thickness it is thicker, be referred to as passivation
Layer.It when chip interior failure, needs to position failure key position, to the layer-by-layer de-layer of chip, analyzes failure cause；And carry out core
When piece circuit details are analyzed, also need to the layer-by-layer de-layer of chip to observe chip internal structure.Chip de-layer refers to chip
Metal layer and metal layer on the smooth removal of medium through hole layer (or passivation layer), during etching de-layer, chip is each
The etching effect from taking out in plasma etching machine is both needed to after having etched, thus it is speculated that etch thicknesses, etching are repeatedly handed over observation
For could ideally remove one layer of medium through hole layer just, disposable accurate judgement etching terminal can greatly improve chip
De-layer etches efficiency.
Removal for chip passivation layer and dielectric layer, the prior art is mainly using etching observation alternative method: metallography microscope
Sem observation sample to be etched, according to sample topography and engineering under the dielectric layer material, sample technique, metallographic microscope of specific sample
Teacher personal experience estimates and is arranged etch period, and the etching storehouse that sample is put into plasma de-layer machine is performed etching.It has etched
Sample is taken out after finishing, metallography microscope sem observation sample is reused, judges whether dielectric layer removes and finish, does not remove such as and finishes,
Etch period needed for reevaluating remaining through-hole dielectric layer according to the pattern variation of etching front and back, is put into plasma etching for sample
It is etched again in machine.It so etches with observation alternately, until dielectric layer etches completely completely.
And the etching observation alternative method that the prior art uses has the disadvantage in that
1, the time required to traditional etching observation alternative method needs to estimate repeatedly to etch every time, every etching parameters are set,
Understand the influence of the type, flow, etching power of etching gas to etch rate, frequent multiple etching ability in actual mechanical process
It can etch in place, or even etching occur excessively, engineer experience be required high；
2, when performing etching to same layer dielectric layer, plasma etching machine is starting and terminating etching observation alternative method
Etching dynamics and not identical when continuously etching, primary ten minutes etching effects of etching when etching, often with etching in two times
Secondary five minutes etching effects of etching are not identical, therefore the judgement difficulty of etching terminal increases；
3, reaction warehouse is vacuum state when plasma etching machine is standby, first to be inflated every time into reaction warehouse when starting flat
It weighs air pressure, then passes to etching gas and perform etching, need to pour nitrogen after etching again with cleared reaction residual gas,
Then reaction warehouse is evacuated, plasma etching machine inflatable body and vacuum are slow, often practical to carve than relatively time-consuming
The time of erosion reaction is arranged to 10 minutes, and whole experiment process lasts 110 minutes or so；
4, it is both needed to take out chip when observation etches result every time, be easy to cause sample to stain, influence de-layer result；
5, the different chip of technique is different to the susceptibility of etching gas, and etching observation alternative method can not observe etching in real time
Process, the judgement that will also result in etching terminal are inaccurate.
The information disclosed in the background technology section is intended only to increase the understanding to general background of the invention, without answering
When being considered as recognizing or imply that the information constitutes the prior art already known to those of ordinary skill in the art in any form.
Summary of the invention
The purpose of the present invention is to provide a kind of for accurately determining the monitoring of plasma etching machine etching chip terminal
Method can observe etching progress in real time, the accurate terminal for determining plasma etching machine etching chip.
To achieve the above object, the present invention provides one kind for accurately determining that plasma etching machine etches chip terminal
Monitoring method, be based on plasma etching machine, and offer observation window at the top of the reaction warehouse of plasma etching machine, and
Microscope is provided with above observation window, for accurately determine plasma etching machine etching chip terminal monitoring method include
Following steps: step 1: chip is put into the reaction warehouse of plasma etching machine；Step 2: the control of plasma etching machine
System processed carries out conventional arrangement and etches chip；Step 3: chip wouldn't be taken out after completing etching process, by microscope through sight
Examine the etching progress that window observes chip in real time；And step 4: the etching for chip is determined whether according to the etching progress of chip
Terminal.
In a preferred embodiment, when determining etching progress is the etching terminal of chip, plasma etching machine
Control system reaction warehouse is carried out to be filled with gas and vacuum pumping, take out chip after the completion.
In a preferred embodiment, when determining etching progress not is the etching terminal of chip, repeat step 2 and
Step 3.
In a preferred embodiment, gas is nitrogen.
Compared with prior art, according to the present invention for accurately determining the prison of plasma etching machine etching chip terminal
Survey method has the following beneficial effects: the monitoring side for accurately judgement plasma etching machine etching chip terminal of the invention
Method observes etching progress in real time, the terminal of plasma etching machine etching chip can be accurately determined, without repeatedly to plasma
Body etching machine is inflated and is vacuumized repeatedly to take out sample and be observed.
Detailed description of the invention
Fig. 1 is according to an embodiment of the present invention for accurately determining the prison of plasma etching machine etching chip terminal
The flow diagram of survey method.
Fig. 2 is according to an embodiment of the present invention for accurately determining the prison of plasma etching machine etching chip terminal
The structural schematic diagram of the plasma etching machine of survey method.
Main appended drawing reference explanation:
1- plasma etching machine, 11- vacuum system, 12- reaction warehouse, 2- observation window, 3- microscope.
Specific embodiment
With reference to the accompanying drawing, specific embodiments of the present invention will be described in detail, it is to be understood that guarantor of the invention
Shield range is not limited by the specific implementation.
Unless otherwise explicitly stated, otherwise in entire disclosure and claims, term " includes " or its change
Changing such as "comprising" or " including " etc. will be understood to comprise stated element or component, and not exclude other members
Part or other component parts.
As shown in Figure 1 to Figure 2, Fig. 1 is according to an embodiment of the present invention for accurately determining plasma etching machine
Etch the flow diagram of the monitoring method of chip terminal；Fig. 2 is according to an embodiment of the present invention for accurately judgement etc.
The structural schematic diagram of the plasma etching machine of the monitoring method of chip terminal is lost in plasma etching machine engraving.
It is according to the preferred embodiment of the present invention a kind of for accurately determining plasma etching machine etching chip terminal
Monitoring method is based on plasma etching machine 1, and the top of the reaction warehouse 12 of plasma etching machine 1 offers observation window
2, and the top of observation window 2 is provided with microscope 3, for accurately determining the monitoring side of plasma etching machine etching chip terminal
Method is the following steps are included: step 1: chip is put into the reaction warehouse 12 of plasma etching machine 1；Step 2: plasma is carved
The control system of erosion machine 1 carries out conventional arrangement and etches chip；Step 3: chip wouldn't be taken out after completing etching process, by aobvious
Micro mirror 3 observes the etching progress of chip through observation window 2 in real time；And step 4: determined whether according to the etching progress of chip
For the etching terminal of chip.
In a preferred embodiment, when determining etching progress is the etching terminal of chip, plasma etching machine 1
Control system reaction warehouse 12 is carried out to be filled with gas and vacuum pumping, take out chip after the completion.
In a preferred embodiment, when determining etching progress not is the etching terminal of chip, repeat step 2 and
Step 3；Gas is nitrogen.
In practical applications, observation window 2 is set in the surface of the reaction warehouse 12 of plasma etching machine 1, by microscope 3
It is combined as shown in Figure 2 with plasma etching machine 1, the surface of the object lens face observation window 2 of microscope 3.By chip
It is put into the reaction warehouse 12 of plasma etching machine 1, the control system of plasma etching machine 1 carries out conventional arrangement and etches core
Piece wouldn't take out chip after one etching process of every completion, and the microscope 3 passed through right above reaction warehouse 12 is real through observation window 2
When observe chip etching progress, determine whether (whether take out core for the etching terminal of chip according to the etching progress of chip
Piece), then corresponding operating is carried out to control system.When determining etching progress is the etching terminal of chip, plasma etching machine 1
Control system reaction warehouse 12 is carried out to be filled with gas and vacuum pumping (by vacuum system 11), take out chip after the completion.
When determining etching progress not is the etching terminal of chip, continue to perform etching chip operation and observe to determine etching progress.
By foregoing description can during the experiment any time observation sample (chip) etching progress, carried out using real-time observation
Sample variation is observed in test in real time in etching process, and accurate judgement etching terminal controls etching progress, without repeatedly reciprocity
Plasma etching machine 1 is inflated and is vacuumized repeatedly to take out sample and be observed, so as to accurately determine plasma etching
The terminal of machine engraving erosion chip.
In short, the monitoring method for accurately determining plasma etching machine etching chip terminal of the invention is with as follows
Advantage:
1, the observation window position of plasma etching machine is arranged right above reaction warehouse, is more convenient the etching effect of observation sample
Fruit；
2, microscope is installed, the convenient sample of observation in real time exists on the observation window above the reaction warehouse of plasma etching machine
Variation in etching process accurately holds etch period, improves conventional efficient；
3, real-time observation whole experiment process avoids plasma etching machine and inflates repeatedly without taking out chip sample
With vacuumize, improve etching efficiency, while avoiding the contamination of chip sample, improve etching result quality；
4, sample can be directly observed when real-time observation is tested and judges etch period, reduced to engineer individual
The dependence of ability experience.
It should be understood by those skilled in the art that, embodiments herein can provide as method, system or computer program
Product.Therefore, complete hardware embodiment, complete software embodiment or reality combining software and hardware aspects can be used in the application
Apply the form of example.Moreover, it wherein includes the computer of computer usable program code that the application, which can be used in one or more,
The computer program implemented in usable storage medium (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.) produces
The form of product.
The application is referring to method, the process of equipment (system) and computer program product according to the embodiment of the present application
Figure and/or block diagram describe.It should be understood that every one stream in flowchart and/or the block diagram can be realized by computer program instructions
The combination of process and/or box in journey and/or box and flowchart and/or the block diagram.It can provide these computer programs
Instruct the processor of general purpose computer, special purpose computer, Embedded Processor or other programmable data processing devices to produce
A raw machine, so that being generated by the instruction that computer or the processor of other programmable data processing devices execute for real
The device for the function of being specified in present one or more flows of the flowchart and/or one or more blocks of the block diagram.
These computer program instructions, which may also be stored in, is able to guide computer or other programmable data processing devices with spy
Determine in the computer-readable memory that mode works, so that it includes referring to that instruction stored in the computer readable memory, which generates,
Enable the manufacture of device, the command device realize in one box of one or more flows of the flowchart and/or block diagram or
The function of being specified in multiple boxes.
These computer program instructions also can be loaded onto a computer or other programmable data processing device, so that counting
Series of operation steps are executed on calculation machine or other programmable devices to generate computer implemented processing, thus in computer or
The instruction executed on other programmable devices is provided for realizing in one or more flows of the flowchart and/or block diagram one
The step of function of being specified in a box or multiple boxes.
The aforementioned description to specific exemplary embodiment of the invention is in order to illustrate and illustration purpose.These descriptions
It is not wishing to limit the invention to disclosed precise forms, and it will be apparent that according to the above instruction, can much be changed
And variation.The purpose of selecting and describing the exemplary embodiment is that explaining specific principle of the invention and its actually answering
With so that those skilled in the art can be realized and utilize a variety of different exemplary implementation schemes of the invention and
Various chooses and changes.The scope of the present invention is intended to be limited by claims and its equivalents.
Claims (4)
1. it is a kind of for accurately determining the monitoring method of plasma etching machine etching chip terminal, it is based on plasma etching
Machine, and observation window is offered at the top of the reaction warehouse of the plasma etching machine, and be provided with above the observation window aobvious
Micro mirror, which is characterized in that the monitoring method for accurately determining plasma etching machine etching chip terminal includes following
Step:
Step 1: chip is put into the reaction warehouse of plasma etching machine；
Step 2: the control system of the plasma etching machine carries out conventional arrangement and etches the chip；
Step 3: wouldn't take out the chip after completing etching process, be seen in real time by the microscope through the observation window
Examine the etching progress of the chip；And
Step 4: determined whether according to the etching progress of the chip for the etching terminal of the chip.
2. it is as described in claim 1 for accurately determining the monitoring method of plasma etching machine etching chip terminal, it is special
Sign is, when determining the etching progress is the etching terminal of the chip, the plasma etching machine it is described
Control system carries out the reaction warehouse to be filled with the gas and vacuum pumping, takes out the chip after the completion.
3. it is as described in claim 1 for accurately determining the monitoring method of plasma etching machine etching chip terminal, it is special
Sign is, when determining the etching progress is not the etching terminal of the chip, repeating said steps two and the step
Rapid three.
4. it is as claimed in claim 2 for accurately determining the monitoring method of plasma etching machine etching chip terminal, it is special
Sign is that the gas is nitrogen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811042338.8A CN109148316A (en) | 2018-09-07 | 2018-09-07 | For accurately determining the monitoring method of plasma etching machine etching chip terminal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811042338.8A CN109148316A (en) | 2018-09-07 | 2018-09-07 | For accurately determining the monitoring method of plasma etching machine etching chip terminal |
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| Publication Number | Publication Date |
|---|---|
| CN109148316A true CN109148316A (en) | 2019-01-04 |
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ID=64827611
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| CN201811042338.8A Pending CN109148316A (en) | 2018-09-07 | 2018-09-07 | For accurately determining the monitoring method of plasma etching machine etching chip terminal |
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| CN208444807U (en) * | 2018-08-01 | 2019-01-29 | 北京智芯微电子科技有限公司 | Plasma etching machine |
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| JPH10116872A (en) * | 1996-10-08 | 1998-05-06 | Hitachi Ltd | Production of semiconductor and inspection method therefor, and device therefor |
| JPH11176815A (en) * | 1997-12-15 | 1999-07-02 | Ricoh Co Ltd | End point judging method of dry etching and dry etching equipment |
| JPH11273613A (en) * | 1998-03-23 | 1999-10-08 | Jeol Ltd | Processing method for sample in fib-sem device and fib-sem device |
| US6162735A (en) * | 1999-03-26 | 2000-12-19 | Infineon Technologies North America Corp. | In-situ method for preparing and highlighting of defects for failure analysis |
| US20050109728A1 (en) * | 2003-10-29 | 2005-05-26 | Sang-Do Oh | End point detector for etching equipment |
| DE102006037294A1 (en) * | 2006-08-09 | 2008-02-14 | Christian Spörl | Etching device comprises reaction chamber in which a wafer substrate can be processed, light source, and a light detector comprising microscope optics, a camera and a filter, which is transparent for selective light of wavelength region |
| US20120322170A1 (en) * | 2011-06-14 | 2012-12-20 | United Microelectronics Corp. | Pinhole inspection method of insulator layer |
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Effective date of registration: 20210826 Address after: 102200 1st floor, building 11, Zhongke Yungu garden, No. 79, Shuangying West Road, Changping District, Beijing Applicant after: Beijing core Kejian Technology Co.,Ltd. Applicant after: BEIJING SMARTCHIP MICROELECTRONICS TECHNOLOGY Co.,Ltd. Applicant after: STATE GRID INFORMATION & TELECOMMUNICATION GROUP Co.,Ltd. Address before: 100192 building 3, A District, Dongsheng science and Technology Park, Zhongguancun, 66 Haidian District West Road, Beijing. Applicant before: BEIJING SMARTCHIP MICROELECTRONICS TECHNOLOGY Co.,Ltd. Applicant before: STATE GRID INFORMATION & TELECOMMUNICATION GROUP Co.,Ltd. |
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Application publication date: 20190104 |