CN109119875B - Bicrystal infrared laser - Google Patents
Bicrystal infrared laser Download PDFInfo
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- CN109119875B CN109119875B CN201811107561.6A CN201811107561A CN109119875B CN 109119875 B CN109119875 B CN 109119875B CN 201811107561 A CN201811107561 A CN 201811107561A CN 109119875 B CN109119875 B CN 109119875B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0619—Coatings, e.g. AR, HR, passivation layer
- H01S3/0621—Coatings on the end-faces, e.g. input/output surfaces of the laser light
- H01S3/0623—Antireflective [AR]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
- H01S3/0813—Configuration of resonator
- H01S3/0815—Configuration of resonator having 3 reflectors, e.g. V-shaped resonators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1671—Solid materials characterised by a crystal matrix vanadate, niobate, tantalate
- H01S3/1673—YVO4 [YVO]
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- Engineering & Computer Science (AREA)
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- Optics & Photonics (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Lasers (AREA)
Abstract
A kind of bicrystal infrared laser, including the first pump laser, the second pump laser, the first focus pack, the second focus pack, resonant component, first laser crystal, second laser crystal and adjusting Q crystal；Resonant component constitutes laser resonator；When exporting the 1064nm pulsed light of low-repetition-frequency, the first pump laser exports pump light, and first laser crystal generates 1064nm laser；When exporting the 1064nm pulsed light of high repetition frequency, the second pump laser exports pump light, and second laser crystal generates 1064nm laser；Under the modulation of adjusting Q crystal, the intracavitary formation 1064nm pulsed light of laser resonance is exported outside laser resonator；By first laser crystal and difference of the second laser crystal on the life time of the level, when so as to switch single laser resonator between low-repetition-frequency output and high repetition frequency output, the 1064nm pulse optical power of output keeps stablizing.
Description
Technical field
The present invention relates to laser technology fields, more particularly to a kind of bicrystal infrared laser.
Background technique
Laser is one of the invention of great significance in modern science technology, wherein the 1064nm laser of end pumping is applied to add
Work field, the application value in metal, nonmetallic and Precision Machining are especially prominent.Since end pump can get higher light beam
Quality, acquisition beam quality is excellent, and the end of the long-acting stable operation of energy pumps infrared 1064nm laser, to growing laser processing
Industry is significant.
The general single-ended pumping of end-pumped laser or both-end pumping laser crystal on the market, then utilize Q switched element
Resonant cavity is carried out to adjust to form pulsed light.In practical application, the parameter of high frequency low frequency can be carried out different operating, tradition side is utilized
The pulsed light mean power that formula is formed can change at different frequencies, can not be simultaneously under high repetition frequency and low-repetition-frequency
There is preferable power stability, causes the 1064nm pulsed light of high repetition frequency and low-repetition-frequency defeated by different equipment
Out, the equipment input cost of laser processing is caused to improve.
Summary of the invention
Based on this, it is necessary to provide a kind of can stablize in high repetition frequency and low-repetition-frequency and export 1064nm pulsed light
Bicrystal infrared laser.
A kind of bicrystal infrared laser, including the first pump laser, the second pump laser and first pumping
Corresponding first focus pack of laser, the second focus pack corresponding with second pump laser, resonant component, first
Laser crystal, second laser crystal and adjusting Q crystal；The resonant component include end mirror before end mirror, second before first, tail end mirror,
Turning mirror and outgoing mirror；End mirror before end mirror, described second before described first, the tail end mirror, the turning mirror and described defeated
Appearance constitutes laser resonator；End mirror is correspondingly arranged before end mirror and described second before described first；The tail end mirror and described the
End mirror is correspondingly arranged before one；The turning mirror respectively with described second before end mirror, the outgoing mirror be correspondingly arranged；Described first swashs
Luminescent crystal, second laser crystal setting are before described first before end mirror and described second between end mirror；The adjusting Q crystal is set
It sets intracavitary in the laser resonance；When exporting the 1064nm pulsed light of low-repetition-frequency, the first pump laser rear pump
The pump light of Pu light, the first pump laser output focuses on the first laser crystal through first focus pack,
The first laser crystal is in the intracavitary generation 1064nm laser of the laser resonance；It is generated by the first laser crystal
1064nm laser transmits the second laser crystal；When exporting the 1064nm pulsed light of high repetition frequency, second pumping swashs
Light device exports pump light, and the pump light of the second pump laser output focuses on described second through second focus pack
Laser crystal, the second laser crystal is in the intracavitary generation 1064nm laser of the laser resonance；By the second laser crystal
The 1064nm laser of generation transmits the first laser crystal；Under the modulation of the adjusting Q crystal, the intracavitary shape of laser resonance
At 1064nm pulsed light, outgoing mirror described in 1064nm pulsed light fractional transmission is exported outside the laser resonator
Above-mentioned bicrystal infrared laser, by being pumped by first when exporting the 1064nm pulsed light of low-repetition-frequency
Laser exports pump light, and first laser crystal generates 1064nm laser, when exporting the 1064nm pulsed light of high repetition frequency,
Pump light is exported by the second pump laser, second laser crystal generates 1064nm laser, passes through first laser crystal and second
Difference of the laser crystal on the life time of the level, so as to make single laser resonator in low-repetition-frequency output and high repetition frequency
When switching between output, the 1064nm pulse optical power of output keeps stablizing, so as to real using the equipment of separate unit laser processing
Existing low-repetition-frequency and stablizing for high repetition frequency 1064nm pulsed light export.
The first laser crystal is Nd:YAG in one of the embodiments, and the second laser crystal is Nd:
YVO4。
The two-sided plating 1064nm of the first laser crystal and the second laser crystal increases in one of the embodiments,
Permeable membrane.
The two-sided plating 808/ of the first laser crystal and the second laser crystal in one of the embodiments,
880nm anti-reflection film.
It in one of the embodiments, further include diaphragm, the diaphragm is equipped with light hole, and the light hole is in described
Between first laser crystal and the second laser crystal.
It in one of the embodiments, further include optical fiber component, the optical fiber component includes the first transmission fiber and second
Transmission fiber；First pump laser couples first transmission fiber and exports pump light, second pump laser
Couple the second transmission fiber output pump light.
The optical fiber component further includes first be correspondingly arranged with first focus pack in one of the embodiments,
Fixing piece, the output end of first transmission fiber are fixed on first fixing piece.
The optical fiber component further includes second be correspondingly arranged with second focus pack in one of the embodiments,
Fixing piece, the output end of second transmission fiber are fixed on second fixing piece.
First focus pack includes the first plano-convex lens and the second plano-convex lens, institute in one of the embodiments,
The convex surface for stating the first plano-convex lens is opposite with the convex surface of second plano-convex lens.
Second focus pack includes third plano-convex lens and the 4th plano-convex lens, institute in one of the embodiments,
The convex surface for stating third plano-convex lens is opposite with the convex surface of the 4th plano-convex lens.
Detailed description of the invention
Fig. 1 is the structure chart of the bicrystal infrared laser of a preferred embodiment of the invention；
Fig. 2 is between power, pulsewidth and the repetition rate of the pulsed light of bicrystal infrared laser shown in FIG. 1 output
Graph of relation.
Specific embodiment
It to facilitate the understanding of the present invention, below will be to invention is more fully described.But the present invention can be to be permitted
Mostly different form is realized, however it is not limited to embodiment described herein.On the contrary, purpose of providing these embodiments is makes
It is more thorough and comprehensive to the understanding of the disclosure.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention
The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.
Referring to Fig. 1, for the bicrystal infrared laser 100 of a better embodiment of the invention, for exporting 1064nm
Pulsed light.The bicrystal infrared laser 100 includes the first pump laser 21, the second pump laser 22 and the first pumping
Corresponding first focus pack 31 of laser 21, second focus pack 32 corresponding with the second pump laser 22, resonant component,
First laser crystal 50, second laser crystal 60 and adjusting Q crystal 70；Resonant component includes end mirror before end mirror 41, second before first
42, tail end mirror 43, turning mirror 44 and outgoing mirror 45；End mirror 42 before end mirror 41, second before first, tail end mirror 43, turning mirror 44,
And outgoing mirror 45 constitutes laser resonator；End mirror 42 is correspondingly arranged before end mirror 41 and second before first；Before tail end mirror 43 and first
End mirror 41 is correspondingly arranged；Turning mirror 44 respectively with second before end mirror 42, outgoing mirror 45 be correspondingly arranged；First laser crystal 50,
The setting of dual-laser crystal 60 is before first before end mirror 41 and second between end mirror 42；The setting of adjusting Q crystal 70 is intracavitary in laser resonance；
When exporting the 1064nm pulsed light of low-repetition-frequency, the first pump laser 21 output 808nm 880nm pump light, first
The pump light that pump laser 21 exports focuses on first laser crystal 50 through the first focus pack 31, and first laser crystal 50 is inhaled
Population inversion is realized after receiving pump energy, in the intracavitary generation 1064nm laser of laser resonance；It is produced by first laser crystal 50
Raw 1064nm laser transmits second laser crystal 60；When exporting the 1064nm pulsed light of high repetition frequency, the second pumping laser
Device 22 exports 808nm 880nm pump light, and the pump light of the second pump laser 22 output is focused through the second focus pack 32
To second laser crystal 60, second laser crystal 60 realizes population inversion after absorbing pump energy, intracavitary in laser resonance
Generate 1064nm laser；First laser crystal 50 is transmitted by the 1064nm laser that second laser crystal 60 generates；In adjusting Q crystal 70
Modulation under, the intracavitary formation 1064nm pulsed light of laser resonance, 1064nm pulsed light fractional transmission outgoing mirror 45 is output to laser
Outside resonant cavity.
By exporting pump light by the first pump laser 21 when exporting the 1064nm pulsed light of low-repetition-frequency, the
One laser crystal 50 generates 1064nm laser, when exporting the 1064nm pulsed light of high repetition frequency, by the second pump laser
22 output pump lights, second laser crystal 60 generate 1064nm laser, pass through first laser crystal 50 and second laser crystal 60
Difference on the life time of the level, so as to make single laser resonator between low-repetition-frequency output and high repetition frequency output
When switching, the 1064nm pulse optical power of output keeps stablizing, so as to realize low repetition using the equipment of separate unit laser processing
Frequency and stablizing for high repetition frequency 1064nm pulsed light export.
In a wherein embodiment, for realize first laser crystal 50 and 60 low-repetition-frequency of second laser crystal and
There is different upper level lifetimes, first laser crystal 50 is Nd:YAG, and second laser crystal 60 is Nd between high repetition frequency:
YVO4；Due to being had differences in life time of the level characteristic for Nd:YAG and Nd:YVO4；The upper level lifetime of Nd:YVO4 is short, about
90us-100us, Nd:YAG upper level lifetime are long, about 230us, and due to the difference of this characteristic, Nd:YVO4 (is greater than in high frequency
There is relatively good laser output under 40khz), Nd:YAG has relatively good laser output under low frequency (being less than 20khz), to make
Laser resonator when low-repetition-frequency exports and switches between high repetition frequency output, protect by the 1064nm pulse optical power of output
It is fixed to keep steady.
Referring to Fig. 2, in Fig. 2, the mean power for the 1064nm pulsed light that bicrystal infrared laser 100 exports be P,
Pulsewidth is τ；In the present embodiment, it when activating second laser crystal 60 by the second pump laser 22, is exported
1064nm pulsed light has smaller pulsewidth, i.e., under same average power output, the operation of opposite first laser crystal 50 is imitated
Fruit, peak value of pulse are higher；If exporting 1064nm pulsed light, 1064nm arteries and veins under low-repetition-frequency by second laser crystal 60
The power decline washed off is serious, and when exporting 1064nm pulsed light under low-repetition-frequency by first laser crystal 50, then can
Keep biggish pulse energy.
Further, since first laser crystal 50 is Nd:YAG, second laser crystal 60 is Nd:YVO4, due to Nd:
YAG and Nd:YVO4 have differences on pulse width characteristic, in the 1064nm pulsed light for needing high-pulse widths, the first pump
Pu laser 21 starts, and the second pump laser 22 stops, Nd:YAG crystal active work, to export high-pulse widths
1064nm pulsed light；When needing the 1064nm pulsed light of low pulse width, the second pump laser 22 starting, the first pumping swashs
Light device 21 stops, the work of Nd:YVO4 crystal active, so that the 1064nm pulsed light of low pulse width is exported, so as to utilize list
The equipment of platform laser processing realizes that low pulse width and stablizing for high-pulse widths 1064nm pulsed light export；In other embodiment party
In formula, it is also possible that first laser crystal 50 is Nd:YVO4, second laser crystal 60 is Nd:YAG.
In a wherein embodiment, pass through first laser crystal 50 or second laser crystal to reduce 1064nm laser
The two-sided plating 1064nm anti-reflection film of loss when 60 surface, first laser crystal 50 and second laser crystal 60, to reduce
The reflection of 1064nm laser.
In a wherein embodiment, pass through 60 table of first laser crystal 50 or second laser crystal to reduce pump light
The two-sided plating 808/880nm anti-reflection film of loss when face, first laser crystal 50 and second laser crystal 60, to improve first
The absorption of laser crystal 50 or second laser crystal 60 to pump light.
Referring to Fig. 1, in a wherein embodiment, it is double for the output mode for adjusting bicrystal infrared laser 100
Crystal infrared laser 100 further includes diaphragm 80, and diaphragm 80 is equipped with light hole, and light hole is in first laser crystal 50 and the
Between dual-laser crystal 60；When bicrystal infrared laser 100 is run, the 1064nm laser for meeting transverse mode property requirements passes through
Light hole, so that bicrystal infrared laser 100 be made to be in scheduled output mode；Further, since diaphragm 80 is arranged
Between first laser crystal 50 and second laser crystal 60, it can avoid second laser crystal 60 and receive the first pump laser 21
The pump light or first laser crystal 50 issued receives the pump light that the second pumping laser is issued, to avoid first
Laser crystal 50 activates simultaneously with second laser crystal 60, avoids the unnecessary consumption of pump light.
In a wherein embodiment, to make pump caused by the first pump laser 21 or the second pump laser 22
Pu light reliable transmission, bicrystal infrared laser 100 further include optical fiber component, and optical fiber component includes the first transmission fiber 91 and the
Two transmission fibers 92；First pump laser 21 couples the first transmission fiber 91 and exports pump light, 22 coupling of the second pump laser
Close the second transmission fiber 92 output pump light.
In a wherein embodiment, for the output end for fixing the first transmission fiber 91, optical fiber component further includes and the
The first fixing piece 93 that one focus pack 31 is correspondingly arranged, the output end of the first transmission fiber 91 are fixed on the first fixing piece 93
On.
In a wherein embodiment, for the output end for fixing the second transmission fiber 92, optical fiber component further includes and the
The second fixing piece 94 that two focus packs 32 are correspondingly arranged, the output end of the second transmission fiber 92 are fixed on the second fixing piece 94
On.
In a wherein embodiment, for the aberration for reducing by the first focus pack 31, the first focus pack 31 includes the
One plano-convex lens 33 and the second plano-convex lens 34, the convex surface of the first plano-convex lens 33 are opposite with the convex surface of the second plano-convex lens 34；
Further, the loss for reduction pump light on the first focus pack 31, the first plano-convex lens 33 and the second plano-convex lens 34
Plate 808nm/880nm anti-reflection film；Specifically, the focus of the first focus pack 31 is in first laser crystal 50, and with first
50 end face of laser crystal is at 1-3mm.
In a wherein embodiment, for the aberration for reducing by the second focus pack 32, the second focus pack 32 includes the
Three plano-convex lens 35 and the 4th plano-convex lens 36, the convex surface of third plano-convex lens 35 are opposite with the convex surface of the 4th plano-convex lens 36；
Further, the loss for reduction pump light on the second focus pack 32, third plano-convex lens 35 and the 4th plano-convex lens 36
Plate 808nm/880nm anti-reflection film；Specifically, the focus of the second focus pack 32 is in second laser crystal 60, and with second
60 end face of laser crystal is at 1-3mm.
Specifically, the first pump laser 21 and the second pump laser 22 are semiconductor laser；Swash to improve first
The pump light that luminescent crystal 50 or second laser crystal 60 are absorbed into, or reduce the loss of 1064nm laser, end mirror 41 before first, the
End mirror 42 plates that 808nm/880nm is anti-reflection and 1064nm high-reflecting film before two；Tail end mirror 43, turning mirror 44 plate 1064n high-reflecting film；Tool
Body, outgoing mirror 45 plates 1064nm fractional transmission film, and in the present embodiment, the transmissivity of outgoing mirror 45 is 10%-40%, by
Outgoing mirror 45 is transmitted in 1064nm laser part, the 1064nm pulse light output laser resonator of outgoing mirror 45 is transmitted, through exporting
The 1064nm laser continuation that mirror 45 reflects is vibrated in laser resonator.
Specifically, adjusting Q crystal 70 is arranged before first between end mirror 41 and tail end mirror 43；Adjusting Q crystal 70 is acousto-optic Q brilliant
Body, electric light Q crystal or passive Q-adjusted crystal 70；Specifically, 1064nm pulsed light is reflexed to turning mirror 44 by end mirror 42 before second,
Then outgoing mirror 45,1064nm pulsed light fractional transmission outgoing mirror 45 are reflexed to by turning mirror 44, to export to laser resonance
Outside chamber；In present embodiment, by the multiple folding of laser resonator, space efficiency utilization is very high, interior in a limited space
Each optical device putting without any confusion is realized, although the case where the compact assembly there is no interference, in the process of realization
In greatly reduce volume required for complete machine so that laser more minimizes, be conducive to the integrated of downstream application end.
In the present embodiment, by being exported by the first pump laser when exporting the 1064nm pulsed light of low-repetition-frequency
Pump light, first laser crystal generate 1064nm laser, when exporting the 1064nm pulsed light of high repetition frequency, by the second pumping
Laser exports pump light, and second laser crystal generates 1064nm laser, is existed by first laser crystal and second laser crystal
Difference on the life time of the level, so as to cut single laser resonator between low-repetition-frequency output and high repetition frequency output
When changing, the 1064nm pulse optical power of output keeps stablizing, and repeats frequency so as to which the equipment realization using separate unit laser processing is low
Rate and stablizing for high repetition frequency 1064nm pulsed light export.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (9)
1. a kind of bicrystal infrared laser, which is characterized in that including the first pump laser, the second pump laser and institute
State corresponding first focus pack of the first pump laser, the second focus pack corresponding with second pump laser, humorous
Shake component, first laser crystal, second laser crystal and adjusting Q crystal；The resonant component includes before first before end mirror, second
End mirror, tail end mirror, turning mirror and outgoing mirror；End mirror, the tail end mirror, the turnover before end mirror, described second before described first
Mirror and the outgoing mirror constitute laser resonator；End mirror is correspondingly arranged before end mirror and described second before described first；The tail end
End mirror is correspondingly arranged before mirror and described first；The turning mirror respectively with described second before end mirror, the outgoing mirror be correspondingly arranged；
The first laser crystal, second laser crystal setting are before described first before end mirror and described second between end mirror；Institute
It is intracavitary in the laser resonance to state adjusting Q crystal setting；When exporting the 1064nm pulsed light of low-repetition-frequency, first pumping swashs
Light device exports pump light, and the pump light of the first pump laser output focuses on described first through first focus pack
Laser crystal, the first laser crystal is in the intracavitary generation 1064nm laser of the laser resonance；By the first laser crystal
The 1064nm laser of generation transmits the second laser crystal；When exporting the 1064nm pulsed light of high repetition frequency, described second
Pump laser exports pump light, and the pump light of the second pump laser output focuses on institute through second focus pack
Second laser crystal is stated, the second laser crystal is in the intracavitary generation 1064nm laser of the laser resonance；Swashed by described second
The 1064nm laser that luminescent crystal generates transmits the first laser crystal；Under the modulation of the adjusting Q crystal, the laser resonance
Intracavitary formation 1064nm pulsed light, outgoing mirror described in 1064nm pulsed light fractional transmission, exports outside the laser resonator；It is described
First laser crystal is Nd:YAG, and the second laser crystal is Nd:YVO4.
2. bicrystal infrared laser according to claim 1, which is characterized in that the first laser crystal and described
The two-sided plating 1064nm anti-reflection film of dual-laser crystal.
3. bicrystal infrared laser according to claim 1, which is characterized in that the first laser crystal and described
The two-sided plating 808/880nm anti-reflection film of dual-laser crystal.
4. bicrystal infrared laser according to claim 1, which is characterized in that further include diaphragm, set on the diaphragm
There is light hole, the light hole is between the first laser crystal and the second laser crystal.
5. bicrystal infrared laser according to claim 1, which is characterized in that it further include optical fiber component, the optical fiber
Component includes the first transmission fiber and the second transmission fiber；First pump laser couples the first transmission fiber output
Pump light, second pump laser couple second transmission fiber and export pump light.
6. bicrystal infrared laser according to claim 5, which is characterized in that the optical fiber component further include with it is described
The first fixing piece that first focus pack is correspondingly arranged, the output end of first transmission fiber are fixed on first fixing piece
On.
7. bicrystal infrared laser according to claim 5, which is characterized in that the optical fiber component further include with it is described
The second fixing piece that second focus pack is correspondingly arranged, the output end of second transmission fiber are fixed on second fixing piece
On.
8. bicrystal infrared laser according to claim 1, which is characterized in that first focus pack includes first
Plano-convex lens and the second plano-convex lens, the convex surface of first plano-convex lens are opposite with the convex surface of second plano-convex lens.
9. bicrystal infrared laser according to claim 1, which is characterized in that second focus pack includes third
Plano-convex lens and the 4th plano-convex lens, the convex surface of the third plano-convex lens are opposite with the convex surface of the 4th plano-convex lens.
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| CN111969402A (en) * | 2020-07-31 | 2020-11-20 | 山东师范大学 | Intermediate infrared narrow linewidth solid pulse laser applied to trolley and method |
| CN114252867B (en) * | 2022-02-28 | 2022-05-20 | 深圳市海创光学有限公司 | Laser radar light source and repetition frequency switching method thereof |
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| CN101558653A (en) * | 2006-10-16 | 2009-10-14 | 康宁股份有限公司 | Wavelength control in wavelength selective, phase, and gain regions of semiconductor lasers |
| CN101719623A (en) * | 2009-11-13 | 2010-06-02 | 温州市嘉泰激光科技有限公司 | Full solid-state laser with optical fiber coupling double-end pump |
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