CN109103152A - A kind of power device and its packaging method - Google Patents
A kind of power device and its packaging method Download PDFInfo
- Publication number
- CN109103152A CN109103152A CN201810927545.5A CN201810927545A CN109103152A CN 109103152 A CN109103152 A CN 109103152A CN 201810927545 A CN201810927545 A CN 201810927545A CN 109103152 A CN109103152 A CN 109103152A
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- China
- Prior art keywords
- layer
- sensor
- window
- routing
- power device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 19
- 239000004642 Polyimide Substances 0.000 claims abstract description 36
- 238000002161 passivation Methods 0.000 claims abstract description 36
- 229920001721 polyimide Polymers 0.000 claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 17
- 230000003287 optical effect Effects 0.000 claims description 8
- 229910000831 Steel Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 239000010959 steel Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 description 6
- 239000004033 plastic Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention discloses a kind of power devices, it includes chip, form metal layer on the chip, passivation layer formed on the metal layer, encapsulated layer, sensor and lead, sensor window and multiple routing windows are offered on the passivation layer, the sensor is set in the sensor window and is electrically connected with the metal layer, the encapsulated layer includes being formed in the passivation layer, it waterproof layer on the routing window and is formed in the sensor window and the polyimide layer of the covering sensor, the lead passes through the waterproof layer and the metal layer is electrically connected in the routing window.Also disclose a kind of packaging method of power device.It can protect the sensor on power device from damage.
Description
Technical field
The present invention relates to power semiconductor chip package technology more particularly to a kind of power device and its packaging methods.
Background technique
With extensive use of the semiconductor technology in industrial production automation, computer technology, mechanics of communication, Yi Ji electricity
The complexity of sub- equipment continues to increase, also higher and higher for the reliability requirement of power device.In the various encapsulation of early stage
In form, the air-tight packagings reliability highest such as ceramics.And the Plastic Package of early stage is since steam diffusion problem can solve, it can
It is difficult to compared with air-tight packaging by property.With continuously improving for material and technique, currently, the reliability of Plastic Package is certain
Aspect oneself be close to or up to the level of the air-tight packagings such as ceramics.
When encapsulating the chip of belt sensor, selective plastic package method common at present, sensor window is without plastic packaging, core
Remaining region of piece is protected using plastic packaging waterproof material, can be caused to damage to sensor in this way, be influenced transducer sensitivity and effect
Rate, and there is no protection materials on sensor, the Performance And Reliability of sensor can be impacted during use.
Summary of the invention
For overcome the deficiencies in the prior art, one of the objects of the present invention is to provide a kind of power devices, can protect
Sensor on power device is from damage；
The second object of the present invention is to provide a kind of packaging method of power device.
An object of the present invention is implemented with the following technical solutions:
A kind of power device, it is characterised in that: it includes chip, forms metal layer on the chip, is formed in institute
Passivation layer, encapsulated layer, sensor and the lead on metal layer are stated, offers sensor window and multiple routings on the passivation layer
Window, the sensor are set in the sensor window and are electrically connected with the metal layer, and the encapsulated layer includes being formed
It waterproof layer on the passivation layer, the routing window and is formed in the sensor window and the covering sensor
Polyimide layer, the lead passes through the waterproof layer and the metal layer is electrically connected in the routing window.
Preferably, the waterproof layer is resin layer.
Preferably, the lead is aluminum steel.
Preferably, the sensor is optical sensor.
Preferably, there are two the routing windows, the sensor window is arranged between two routing windows.
The second object of the present invention is implemented with the following technical solutions:
A kind of packaging method of above-mentioned power device comprising following steps:
A, chip, sensor and lead are provided, a metal layer is formed on the chip, is formed on the metal layer
One passivation layer；
B, sensor window and routing window are formed on the passivation layer, then the sensor is arranged in the sensing
In device window；
C, polyimide layer is prepared on the routing window, the sensor window and the passivation layer；
D, silicon oxide layer is prepared on the polyimide layer；
E, the routing window and silicon oxide layer and polyimide layer on the passivation layer are removed；
F, the lead is connect with the metal layer on the routing window；
G, waterproof layer is prepared on the routing window, the passivation layer and the silicon oxide layer；
H, the waterproof layer and silicon oxide layer on the polyimide layer are removed.
Further, in step E, photolithographic exposure is carried out, by adjusting light exposure by the routing window and the passivation
Polyimide layer removal on layer.
Further, the lead is aluminum steel, and the waterproof layer is resin layer, and the sensor is optical sensor.
Further, in the step E, the polyamides on the routing window and the passivation layer is removed using developer solution
Imine layer.
Further, in the step H, the silicon oxide layer and waterproof on the polyimide layer are removed using etching liquid
Layer.
Compared with prior art, the beneficial effects of the present invention are:
It is covered with polyimide layer in its sensor window, which can protect the biography in the sensor window
Sensor encapsulation and using when be not damaged, to protect the performance of sensor.In addition, not damaging sensing when its encapsulation
Device keeps the packaging method of power device simple without repairing to sensor.
Detailed description of the invention
Fig. 1 is the sectional view of power device of the invention；
Fig. 2 is the flow chart of the power device package method in Fig. 1；
Fig. 3 is the process flow diagram of the power device package method in Fig. 1.
In figure:
1. power device；10, chip；20, metal layer；30, passivation layer；31, routing window；32, sensor window；40,
Encapsulated layer；41, polyimide layer；42, silicon oxide layer；43, lead；44, waterproof layer；
Specific embodiment
In the following, being described further in conjunction with attached drawing and specific embodiment to the present invention:
As shown in Figure 1, a kind of power device 1 comprising chip 10, the metal layer 20 being formed on the chip 10, shape
At passivation layer 30, encapsulated layer 40, sensor (not shown) and the lead 43 on the metal layer 20, opened on the passivation layer 30
Equipped with sensor window 32 and multiple routing windows 31, the sensor be set in the sensor window 32 and with the gold
Belong to layer 20 to be electrically connected, the encapsulated layer 40 includes being formed in the passivation layer 30,44 and of waterproof layer on the routing window 31
It is formed in the sensor window 32 and the polyimide layer 41 of the covering sensor, the lead 43 passes through the waterproof
Layer 44 is electrically connected in the routing window 31 with the metal layer 20.
In the above-described embodiment, it is covered with polyimide layer 41 in the sensor window 32, the polyimide layer 41
Can protect sensor in the sensor window 32 encapsulation and using when be not damaged, to protect the property of sensor
Energy；Its waterproof layer 44 can increase the waterproof performance at routing window 31, and prevent chip 10 and metal layer 20 from intaking short-circuit and damaging
It is bad.
As Figure 2-3, it is preferred that the waterproof layer 44 is the resin layer of performance stabilization, price material benefit；The lead 43
For the aluminum steel to conduct electricity very well.The sensor is optical sensor, because of 41 energy light transmission of polyimide layer, polyimide layer
Optical sensor under 41 not will receive the influence of polyimide layer 41.There are two the routing windows 31, the sensor window
32 are arranged between two routing windows 31, installation that is beautiful and being convenient for lead 43.The polyimide layer 41 is arranged described
It is beautiful and be conducive to optical sensor and receive light among waterproof layer 44.
It is to be appreciated that the waterproof layer 44 can also be rubber or silica etc., the lead 43 can also be copper wire etc..
As Figure 2-3, the invention also discloses the packaging methods of above-mentioned power device 1, comprising steps of
A, chip 10, sensor and lead 43 are provided, a metal layer 20 is formed on the chip 10, in the metal
A passivation layer 30 is formed on layer 20；
B, sensor window 32 and routing window 31 are formed on the passivation layer 30, then the sensor is arranged in institute
It states in sensor window 32；
C, polyimide layer 41 is prepared on the routing window 31, the sensor window 32 and the passivation layer 30；
D, silicon oxide layer 42 is prepared on the polyimide layer 41；
E, the routing window 31 and silicon oxide layer 42 and polyimide layer 41 on the passivation layer 30 are removed；
F, the lead 43 is connect with the metal layer 20 on the routing window 31；
G, waterproof layer 44 is prepared on the routing window 31, the passivation layer 30 and the silicon oxide layer 20；
H, the waterproof layer 44 and silicon oxide layer 20 on the polyimide layer 41 are removed.
In the step E of above embodiment, the reflectivity of the passivation layer 30 and 31 light of routing window is high, so
Polyimide layer 41 on the passivation layer 30 and routing window 31 completes light exposure required for exposing and is less than sensor window
The light exposure of polyimide layer 41 on mouth 32 thus can make the passivation layer 30 and routing by setting enough light exposures
Polyimide layer 41 on window 31 is removed, and the light exposure that the polyimide layer 41 in the sensor window 32 is set is not
It cannot be removed enough.
As Figure 2-3, it is preferred that the lead 43 is aluminum steel, and the waterproof layer 44 is resin layer, and the sensor is
Optical sensor.In the step D, the polyimides on the routing window 31 and the passivation layer 30 is removed using developer solution
Layer 41.In the step G, the silicon oxide layer 42 on the polyimide layer 41 is removed using etching liquid, and makes silicon oxide layer
Waterproof layer 44 on 42 is removed together.
It summarizes, is covered with polyimide layer 41 in sensor window 32 of the present invention, which can protect
Sensor in the sensor window 32 encapsulation and using when be not damaged, to protect the performance of sensor.In addition,
Due to being hardly damaged sensor when its encapsulation, with regard to being not necessarily to repair sensor, and make the packaging method letter of this power device 1
It is single.
The basic principles, main features and advantages of the invention have been shown and described above.The technical staff of the industry should
Understand, the present invention is not limited to the above embodiments, and only illustrating for the description in above embodiments and description is of the invention
Principle, without departing from the spirit and scope of the present invention, various changes and improvements may be made to the invention, these change and change
Into all fall within the protetion scope of the claimed invention.The claimed scope of the invention is by appended claims and its equivalent
It defines.
Claims (10)
1. a kind of power device, it is characterised in that: it include chip, formed metal layer on the chip, be formed in it is described
Passivation layer, encapsulated layer, sensor and lead on metal layer offer sensor window and multiple routing windows on the passivation layer
Mouthful, the sensor is set in the sensor window and is electrically connected with the metal layer, and the encapsulated layer includes being formed in
The passivation layer, the waterproof layer on the routing window and be formed in the sensor window and the covering sensor it is poly-
Imide layer, the lead passes through the waterproof layer and the metal layer is electrically connected in the routing window.
2. power device according to claim 1, it is characterised in that: the waterproof layer is resin layer.
3. power device according to claim 1, it is characterised in that: the lead is aluminum steel.
4. power device according to claim 1, it is characterised in that: the sensor is optical sensor.
5. power device according to claim 1, it is characterised in that: there are two the routing windows, the sensor window
Mouth is arranged between two routing windows.
6. a kind of packaging method of power device as claimed in any one of claims 1 to 6, which is characterized in that it includes following step
It is rapid:
A, chip, sensor and lead are provided, form a metal layer on the chip, forms one on the metal layer
Passivation layer；
B, sensor window and routing window are formed on the passivation layer, then the sensor is arranged in the sensor window
In mouthful；
C, polyimide layer is prepared on the routing window, the sensor window and the passivation layer；
D, silicon oxide layer is prepared on the polyimide layer；
E, the routing window and silicon oxide layer and polyimide layer on the passivation layer are removed；
F, the lead is connect with the metal layer on the routing window；
G, waterproof layer is prepared on the routing window, the passivation layer and the silicon oxide layer；
H, the waterproof layer and silicon oxide layer on the polyimide layer are removed.
7. the packaging method of power device according to claim 6, it is characterised in that: in step E, carry out photolithographic exposure, lead to
Adjustment light exposure is crossed to remove the polyimide layer on the routing window and the passivation layer.
8. the packaging method of power device according to claim 6, it is characterised in that: the lead is aluminum steel, the waterproof
Layer is resin layer, and the sensor is optical sensor.
9. the packaging method of power device according to claim 6, it is characterised in that: in the step E, use developer solution
Remove the polyimide layer on the routing window and the passivation layer.
10. the packaging method of power device according to claim 6, it is characterised in that: in the step H, use etching
Liquid removes silicon oxide layer and waterproof layer on the polyimide layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810927545.5A CN109103152A (en) | 2018-08-15 | 2018-08-15 | A kind of power device and its packaging method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810927545.5A CN109103152A (en) | 2018-08-15 | 2018-08-15 | A kind of power device and its packaging method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109103152A true CN109103152A (en) | 2018-12-28 |
Family
ID=64849787
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810927545.5A Pending CN109103152A (en) | 2018-08-15 | 2018-08-15 | A kind of power device and its packaging method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109103152A (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000031349A (en) * | 1998-03-17 | 2000-01-28 | Denso Corp | Semiconductor device and manufacture of it |
| US20080009102A1 (en) * | 2006-07-07 | 2008-01-10 | Advanced Semiconductor Engineering Inc. | Method for Encasulating Sensor Chips |
| US20080252760A1 (en) * | 2007-04-10 | 2008-10-16 | Hon Hai Precision Industry Co., Ltd. | Compact image sensor package and method of manufacturing the same |
| JP2009145267A (en) * | 2007-12-17 | 2009-07-02 | Alps Electric Co Ltd | Waterproof mounting structure of sensor |
| US20090267170A1 (en) * | 2008-04-29 | 2009-10-29 | Omnivision Technologies, Inc. | Apparatus and Method For Using Spacer Paste to Package an Image Sensor |
| US20120104624A1 (en) * | 2010-10-28 | 2012-05-03 | Stats Chippac, Ltd. | Semiconductor Device and Method of Stacking Semiconductor Die in Mold Laser Package Interconnected by Bumps and Conductive Vias |
| WO2016182395A1 (en) * | 2015-05-14 | 2016-11-17 | 한양대학교 산학협력단 | Sensor packaging and method for manufacturing same |
| CN106298556A (en) * | 2015-05-19 | 2017-01-04 | 北大方正集团有限公司 | The manufacture method of a kind of chip pressure welding block and chip |
| CN208674097U (en) * | 2018-08-15 | 2019-03-29 | 深圳市金誉半导体有限公司 | A kind of power device |
-
2018
- 2018-08-15 CN CN201810927545.5A patent/CN109103152A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000031349A (en) * | 1998-03-17 | 2000-01-28 | Denso Corp | Semiconductor device and manufacture of it |
| US20080009102A1 (en) * | 2006-07-07 | 2008-01-10 | Advanced Semiconductor Engineering Inc. | Method for Encasulating Sensor Chips |
| US20080252760A1 (en) * | 2007-04-10 | 2008-10-16 | Hon Hai Precision Industry Co., Ltd. | Compact image sensor package and method of manufacturing the same |
| JP2009145267A (en) * | 2007-12-17 | 2009-07-02 | Alps Electric Co Ltd | Waterproof mounting structure of sensor |
| US20090267170A1 (en) * | 2008-04-29 | 2009-10-29 | Omnivision Technologies, Inc. | Apparatus and Method For Using Spacer Paste to Package an Image Sensor |
| US20120104624A1 (en) * | 2010-10-28 | 2012-05-03 | Stats Chippac, Ltd. | Semiconductor Device and Method of Stacking Semiconductor Die in Mold Laser Package Interconnected by Bumps and Conductive Vias |
| WO2016182395A1 (en) * | 2015-05-14 | 2016-11-17 | 한양대학교 산학협력단 | Sensor packaging and method for manufacturing same |
| CN106298556A (en) * | 2015-05-19 | 2017-01-04 | 北大方正集团有限公司 | The manufacture method of a kind of chip pressure welding block and chip |
| CN208674097U (en) * | 2018-08-15 | 2019-03-29 | 深圳市金誉半导体有限公司 | A kind of power device |
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| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Country or region after: China Address after: 518000 1st floor, No. 315, Huachang Road, Langkou community, Dalang street, Longhua District, Shenzhen City, Guangdong Province Applicant after: Shenzhen Jinyu Semiconductor Co.,Ltd. Address before: 518000 floor 1-3, building 2, Huachang Industrial Zone, Huachang Road, Langkou community, Dalang street, Longhua New District, Shenzhen City, Guangdong Province Applicant before: SHENZHEN JINYU SEMICONDUCTOR Co.,Ltd. Country or region before: China |