CN109062008B - Ultraviolet positive photoresist - Google Patents
Ultraviolet positive photoresist Download PDFInfo
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- CN109062008B CN109062008B CN201810955478.8A CN201810955478A CN109062008B CN 109062008 B CN109062008 B CN 109062008B CN 201810955478 A CN201810955478 A CN 201810955478A CN 109062008 B CN109062008 B CN 109062008B
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- phenolic resin
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- positive photoresist
- linear phenolic
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 49
- 229920001568 phenolic resin Polymers 0.000 claims abstract description 44
- 239000005011 phenolic resin Substances 0.000 claims abstract description 44
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000003504 photosensitizing agent Substances 0.000 claims abstract description 19
- NDMUQNOYNAWAAL-UHFFFAOYSA-N 3-diazo-1,4-dioxonaphthalene-2-sulfonic acid Chemical compound C1=CC=C2C(=O)C(=[N+]=[N-])C(S(=O)(=O)O)C(=O)C2=C1 NDMUQNOYNAWAAL-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 10
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract description 6
- 239000002904 solvent Substances 0.000 claims abstract description 6
- 239000002318 adhesion promoter Substances 0.000 claims abstract description 5
- 239000001294 propane Substances 0.000 claims abstract description 4
- 239000012745 toughening agent Substances 0.000 claims abstract description 4
- 238000005886 esterification reaction Methods 0.000 claims abstract description 3
- 238000006467 substitution reaction Methods 0.000 claims abstract description 3
- 239000000126 substance Substances 0.000 claims description 15
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 12
- 125000001424 substituent group Chemical group 0.000 claims description 10
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 claims description 8
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 claims description 8
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims description 8
- NPFYZDNDJHZQKY-UHFFFAOYSA-N 4-Hydroxybenzophenone Chemical compound C1=CC(O)=CC=C1C(=O)C1=CC=CC=C1 NPFYZDNDJHZQKY-UHFFFAOYSA-N 0.000 claims description 6
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 claims description 6
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 claims description 4
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 4
- 229920000459 Nitrile rubber Polymers 0.000 claims description 4
- 244000028419 Styrax benzoin Species 0.000 claims description 4
- 235000000126 Styrax benzoin Nutrition 0.000 claims description 4
- 235000008411 Sumatra benzointree Nutrition 0.000 claims description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 4
- 229960002130 benzoin Drugs 0.000 claims description 4
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 claims description 4
- 239000012965 benzophenone Substances 0.000 claims description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 claims description 4
- 235000019382 gum benzoic Nutrition 0.000 claims description 4
- 150000002576 ketones Chemical class 0.000 claims description 4
- 239000004695 Polyether sulfone Substances 0.000 claims description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 3
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 claims description 3
- 229920006393 polyether sulfone Polymers 0.000 claims description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 claims description 2
- WOXXJEVNDJOOLV-UHFFFAOYSA-N ethenyl-tris(2-methoxyethoxy)silane Chemical compound COCCO[Si](OCCOC)(OCCOC)C=C WOXXJEVNDJOOLV-UHFFFAOYSA-N 0.000 claims description 2
- 229940116333 ethyl lactate Drugs 0.000 claims description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 2
- 229920001955 polyphenylene ether Polymers 0.000 claims description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 2
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 claims description 2
- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 abstract description 5
- 206010034972 Photosensitivity reaction Diseases 0.000 abstract description 3
- 230000036211 photosensitivity Effects 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 229940113088 dimethylacetamide Drugs 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920013636 polyphenyl ether polymer Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012065 filter cake Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000005457 ice water Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000008137 solubility enhancer Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Abstract
The invention provides an ultraviolet positive photoresist suitable for exposure under an UV light source, which consists of 1 to 10 mass percent of diazonaphthoquinone sulfonate photosensitizer with a special structure, 10 to 50 mass percent of linear phenolic resin, 0.2 to 1 mass percent of sensitizer, 0.1 to 1 mass percent of toughener, 0.4 to 1 mass percent of adhesion promoter, 0.2 to 1 mass percent of flatting agent and the balance of solvent; wherein the diazonaphthoquinone sulfonate photosensitizer with a special structure is obtained by carrying out substitution reaction or esterification reaction on 1, 1-p-hydroxyphenyl- [ 1-biphenyl-4-isopropyl- (1-o-methyl-4-phenol) ] propane and 2-diazo-1-naphthoquinone-5-sulfonyl chloride according to the feeding amount of 1: 2; the linear phenolic resin is a mixture of a first linear phenolic resin and a second linear phenolic resin, and the weight ratio of the first linear phenolic resin to the second linear phenolic resin is 2-8: 8-2. Compared with the common diazonaphthoquinone sulfonate-phenolic resin system photoresist, the ultraviolet positive photoresist has higher resolution, photosensitivity and size reducibility.
Description
Technical Field
The present invention relates to a photoresist, and more particularly, to a positive photoresist, and more particularly, to an ultraviolet positive photoresist suitable for exposure to a UV light source.
Background
The photoresist is also called as photoresist, which is a mixed liquid which is composed of three main components of photosensitive resin, photosensitizer and solvent and is sensitive to light; the photoresist has photochemical sensitivity, and a required fine pattern is transferred from a template (mask) to a substrate to be processed by processes of exposure, development and the like by utilizing photochemical reaction, and then the process processing such as etching, diffusion, ion implantation and the like is carried out. According to different imaging mechanisms, the photoresist can be divided into negative photoresist and positive photoresist, the positive photoresist is that under the irradiation of light with certain wavelength, the photoresist of the illuminated part is decomposed, the solubility is increased, the dissolution difference between the exposed part and the unexposed part is increased, the exposed soluble part can be removed by using proper developer, and finally, an image consistent with a mask is formed on the processed surface.
Depending on the exposure light source and radiation, positive photoresists may be further classified into Ultraviolet (UV) photoresists, Deep Ultraviolet (DUV) photoresists, Extreme Ultraviolet (EUV) photoresists, electron beam photoresists, particle beam photoresists, and X-ray photoresists, among which the UV positive photoresists further include G-line photoresists exposed to UV light having a wavelength of 436nm and I-line photoresists exposed to UV light having a wavelength of 365 nm.
Most of the ultraviolet positive photoresists sold on the market at present adopt diazonaphthoquinone sulfonate (DNQ) photosensitizer as photosensitizer, because DNQ is a strong dissolution inhibitor before exposure, which can reduce the dissolution speed of resin, and DNQ is chemically decomposed in the photoresist to become a solubility enhancer after ultraviolet exposure, which can greatly improve the solubility factor in a developing solution to 100 or higher, so that the generated patterns have good resolution.
With the rapid development of the electronic semiconductor industry, higher density integrated circuits and larger capacity memories are becoming the trend of development, which requires the photolithographic imaging technology to be able to draw finer images, and the existing ultraviolet positive photoresist has certain defects in the aspects of exposure, resolution and size reducibility, and cannot meet the production requirements. In order to meet the development requirements of the electronic semiconductor industry, it is a subject of research by those skilled in the art to find an ultraviolet positive photoresist with stable quality, high resolution, low exposure and other properties.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a novel ultraviolet positive photoresist which has higher resolution, photosensitivity and size reducibility when exposed under a UV light source than the common diazonaphthoquinone sulfonate-phenolic resin system photoresist.
In order to realize the purpose, the ultraviolet positive photoresist consists of 1 to 10 mass percent of diazonaphthoquinone sulfonate photosensitizer with special structure, 10 to 50 mass percent of linear phenolic resin, 0.2 to 1 mass percent of sensitizer, 0.1 to 1 mass percent of toughener, 0.4 to 1 mass percent of adhesion promoter, 0.2 to 1 mass percent of flatting agent and the balance of solvent; the diazonaphthoquinone sulfonate photosensitizer with a special structure is at least one compound which is obtained by 1, 1-p-hydroxyphenyl- [ 1-biphenyl-4-isopropyl- (1-o-methyl-4-phenol) ] propane and 2-diazo-1-naphthoquinone-5-sulfonyl chloride through substitution reaction or esterification reaction according to the feeding amount of 1:2 and accords with a chemical general formula I:
（I）
wherein at least one substituent R is in accordance with the chemical general formula II, and the rest substituents R are H or in accordance with the chemical general formula II;
（II）
the linear phenolic resin is a mixture of a first linear phenolic resin and a second linear phenolic resin, the first linear phenolic resin is tert-butyl-phenolic resin or m-methyl-phenolic resin, the second linear phenolic resin is p-methyl-phenolic resin or o-methyl-phenolic resin, and the weight ratio of the first linear phenolic resin to the second linear phenolic resin is 2-8: 8-2.
The sensitizer is one or more of benzophenone, 4-hydroxybenzophenone and benzoin dimethyl ether.
The toughening agent is one or more of carboxylic nitrile rubber, polyether sulfone and polyphenylene ether ketone.
The adhesion promoter is one or more of hexamethyldisilazane, gamma-glycidoxypropyltrimethoxysilane, gamma-aminopropyltriethoxysilane, vinyltriethoxysilane, vinyltrimethoxysilane and vinyltris (beta-methoxyethoxy) silane.
The leveling agent is one or more of BYK-300, BYK-325, BYK-330, BYK-333 and BYK-354.
The solvent is one or more of propylene glycol methyl ether acetate, ethyl acetate, butyl acetate, ethyl lactate, propylene glycol monomethyl ether, cyclohexanone, tetrahydrofuran and dimethylacetamide.
The ultraviolet positive photoresist of the invention adopts diazonaphthoquinone sulfonate with special structure as photosensitizer, and matches with different types of linear phenolic resin, so that the obtained positive photoresist has higher resolution, higher photosensitivity and better size reducibility than the common diazonaphthoquinone sulfonate-phenolic resin system photoetching when exposed under a UV light source, and is particularly suitable for exposure by using I-line with the wavelength of 365 nm.
Detailed Description
Preparing a diazonaphthoquinone sulfonate photosensitizer with a special structure: taking 0.19-0.25 mol of 1, 1-p-hydroxyphenyl- [ 1-biphenyl-4-isopropyl- (1-o-methyl-4-phenol) ] propane into a three-neck flask provided with a condensing device, adding a proper amount of acetone, stirring until the solution becomes colorless and transparent, then heating to 50-60 ℃, adding 0.38-0.5 mol of 2-diazo-1-naphthoquinone-5-sulfonyl chloride in batches after the reaction system is stabilized, slowly dropwise adding 0.019-0.032 mol of triethylamine by using a constant-pressure funnel after the reaction system is recovered to be stable, controlling the dropwise adding time to be 1-2 hours, keeping the reaction system to react for 2-4 hours after the dropwise adding is finished, pouring the reaction solution into 500-600ml of distilled water after the reaction is finished, adding 0.1-0.2 g of NaCl solid, stirring, stirring for 30-40 min, vacuum filtering, washing the filter cake with ice water, and drying to constant weight to obtain the diazonaphthoquinone sulfonate photosensitizer with special structure.
Example 1
According to the mass percentage, 1.5 percent of diazonaphthoquinone sulfonate photosensitizer with special structure prepared by the method, 4 percent of tert-butyl-phenolic resin, 10 percent of p-methyl-phenolic resin, 0.5 percent of benzophenone, 0.2 percent of carboxyl nitrile rubber, 0.5 percent of hexamethyl disilazane, 0.5 percent of BYK-300 leveling agent and the balance of ethyl acetate are uniformly mixed to obtain the ultraviolet positive photoresist G1.
Example 2
According to the mass percentage, 2 percent of diazonaphthoquinone sulfonate photosensitizer with special structure prepared by the method, 8 percent of tert-butyl-phenolic resin, 15 percent of o-methyl-phenolic resin, 0.3 percent of 4-hydroxybenzophenone, 0.3 percent of polyethersulfone, 0.6 percent of vinyl triethoxysilane, 0.8 percent of BYK-325 leveling agent and the balance of cyclohexanone are uniformly mixed to obtain the ultraviolet positive photoresist G2.
Example 3
According to the mass percentage, 3.5 percent of diazonaphthoquinone sulfonate photosensitizer with special structure prepared by the method, 20 percent of m-methyl-phenolic resin, 20 percent of o-methyl-phenolic resin, 0.35 percent of benzoin dimethyl ether, 0.5 percent of polyphenylether ketone, 0.8 percent of gamma-aminopropyl triethoxysilane, 0.8 percent of BYK-330 flatting agent and the balance of dimethylacetamide are uniformly mixed to obtain the ultraviolet positive photoresist G3.
Comparative example 1
Ultraviolet positive photoresist D1 prepared by using a common diazo naphthoquinone sulfonate photosensitizer (the chemical structural formula is shown as III):
（III）
wherein at least one substituent R in the formula accords with a chemical general formula II, and the rest substituent R is H or formula II;
the composition comprises the following substances in parts by mass: 1.5 percent of diazonaphthoquinone sulfonate photosensitizer shown in the formula III, 4.0 percent of tert-butyl-phenolic resin, 10.0 percent of p-methyl-phenolic resin, 0.5 percent of benzophenone, 0.2 percent of carboxyl nitrile rubber, 0.5 percent of hexamethyl disilazane, 0.5 percent of BYK-300 flatting agent and the balance of ethyl acetate.
Comparative example 2
The ultraviolet positive photoresist D2 is prepared by adopting a common diazo naphthoquinone sulfonate photosensitizer (the chemical structural formula is shown as IIII):
wherein at least one substituent R is in accordance with the chemical general formula II, and the rest substituents R are H or in accordance with the chemical general formula II;
（IIII）
wherein at least one substituent R is in accordance with the chemical general formula II, and the rest substituents R are H or in accordance with the chemical general formula II;
the composition comprises the following substances in parts by mass: 3.5 percent of diazonaphthoquinone sulfonate photosensitizer with the formula IIII, 20.0 percent of m-methyl-phenolic resin, 20.0 percent of o-methyl-phenolic resin, 0.35 percent of benzoin dimethyl ether, 0.5 percent of polyphenyl ether ketone, 0.8 percent of gamma-aminopropyl triethoxysilane, 0.8 percent of BYK-330 flatting agent and the balance of dimethyl acetamide.
And (3) performance detection:
the photoresists G1-G3 and D1-D2 prepared in examples 1-3 and comparative examples 1-2 were filtered with a 0.2 μm sieve, then subjected to gumming, prebaking, exposure test (I-line exposure at 365nm wavelength), development and postbaking, and then tested for resolution and dimensional reducibility, and the test results are shown in table 1:
TABLE 1
As can be seen from the above table, the UV positive photoresist obtained by the formulation of the present invention has an exposure amount significantly smaller than that of comparative examples 1 and 2 under the exposure of an I-line light source with a wavelength of 365nm, but has higher resolution and better dimension reducibility, and is particularly suitable for the production of high density integrated circuits and mass storage.
Claims (5)
1. An ultraviolet positive photoresist, comprising: the ultraviolet positive photoresist consists of 1 to 10 mass percent of diazonaphthoquinone sulfonate photosensitizer with a special structure, 10 to 50 mass percent of linear phenolic resin, 0.2 to 1 mass percent of sensitizer, 0.1 to 1 mass percent of flexibilizer, 0.4 to 1 mass percent of adhesion promoter, 0.2 to 1 mass percent of flatting agent and the balance of solvent; the diazonaphthoquinone sulfonate photosensitizer with a special structure is at least one compound which is obtained by 1, 1-p-hydroxyphenyl- [ 1-biphenyl-4-isopropyl- (1-o-methyl-4-phenol) ] propane and 2-diazo-1-naphthoquinone-5-sulfonyl chloride through substitution reaction or esterification reaction according to the feeding amount of 1:2 and accords with a chemical general formula I:
(I)
wherein at least one substituent R is in accordance with the chemical general formula II, and the rest substituents R are H or in accordance with the chemical general formula II;
(II)
the linear phenolic resin is a mixture of a first linear phenolic resin and a second linear phenolic resin, the first linear phenolic resin is tert-butyl-phenolic resin or m-methyl-phenolic resin, the second linear phenolic resin is p-methyl-phenolic resin or o-methyl-phenolic resin, and the weight ratio of the first linear phenolic resin to the second linear phenolic resin is 2-8: 8-2; the toughening agent is one or more of carboxyl nitrile rubber, polyether sulfone and polyphenylene ether ketone; the ultraviolet positive photoresist is suitable for exposure by using I rays with the wavelength of 365 nm.
2. The ultraviolet positive photoresist of claim 1, wherein: the sensitizer is one or more of benzophenone, 4-hydroxybenzophenone and benzoin dimethyl ether.
3. The ultraviolet positive photoresist according to claim 1 or 2, wherein: the adhesion promoter is one or more of hexamethyldisilazane, gamma-glycidoxypropyltrimethoxysilane, gamma-aminopropyltriethoxysilane, vinyltriethoxysilane, vinyltrimethoxysilane and vinyltris (beta-methoxyethoxy) silane.
4. The ultraviolet positive photoresist of claim 3, wherein: the leveling agent is one or more of BYK-300, BYK-325, BYK-330, BYK-333 and BYK-354.
5. The ultraviolet positive photoresist of claim 4, wherein: the solvent is one or more of propylene glycol methyl ether acetate, ethyl acetate, butyl acetate, ethyl lactate, propylene glycol monomethyl ether, cyclohexanone, tetrahydrofuran and dimethylacetamide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810955478.8A CN109062008B (en) | 2018-08-21 | 2018-08-21 | Ultraviolet positive photoresist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810955478.8A CN109062008B (en) | 2018-08-21 | 2018-08-21 | Ultraviolet positive photoresist |
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| Publication Number | Publication Date |
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| CN109062008A CN109062008A (en) | 2018-12-21 |
| CN109062008B true CN109062008B (en) | 2022-03-11 |
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Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112174998B (en) * | 2019-07-02 | 2023-06-16 | 山东圣泉新材料股份有限公司 | Adhesion promoter and photosensitive resin composition containing same |
| WO2021000265A1 (en) * | 2019-07-02 | 2021-01-07 | 山东圣泉新材料股份有限公司 | Adhesion promoter and photosensitive resin composition containing same |
| CN110441989B (en) * | 2019-08-07 | 2022-08-23 | 沧州信联化工有限公司 | Photoresist composition |
| CN112378872A (en) * | 2019-11-08 | 2021-02-19 | 陕西彩虹新材料有限公司 | Method for testing UV ratio of positive photoresist |
| CN111505902B (en) * | 2020-05-27 | 2024-02-20 | 北京北旭电子材料有限公司 | Photoresist composition and preparation method thereof |
| CN112180682A (en) * | 2020-08-14 | 2021-01-05 | 陕西彩虹新材料有限公司 | Positive photoresist additive with excellent surface performance |
| CN112114497B (en) * | 2020-08-27 | 2024-02-20 | 江苏中德电子材料科技有限公司 | High heat-resistant positive photoresist and scheme for forming photoresist pattern |
| CN114436910B (en) * | 2020-11-02 | 2024-01-26 | 北京鼎材科技有限公司 | Diazonaphthoquinone sulfonate compound and resin composition |
| CN112684661B (en) * | 2020-12-23 | 2023-06-27 | 江苏穿越光电科技有限公司 | Photoresist composition and preparation method thereof |
| CN112650025B (en) * | 2020-12-23 | 2023-05-26 | 上海彤程电子材料有限公司 | Positive photoresist composition and preparation method thereof |
| CN113511803A (en) * | 2021-07-20 | 2021-10-19 | 湖南智信微电子科技有限公司 | High-precision optical glass part processing method and protective liquid |
| CN114153123B (en) * | 2021-12-10 | 2023-09-19 | 中国科学院光电技术研究所 | Photoresist composition and application thereof |
| CN116023309A (en) * | 2022-12-05 | 2023-04-28 | Tcl华星光电技术有限公司 | Diazonaphthoquinone compound and photoresist composition |
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| CN105607418A (en) * | 2015-12-23 | 2016-05-25 | 苏州瑞红电子化学品有限公司 | High heat-resistant photoresist composition and application technology thereof |
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| WO2008117308A2 (en) * | 2007-03-23 | 2008-10-02 | Council Of Scientific & Industrial Research | Novel diazonaphthoquinonesulfonic acid bisphenol derivative useful in photo lithographic sub micron patterning and a process for preparation thereof |
| CN101974202A (en) * | 2010-09-30 | 2011-02-16 | 昆山西迪光电材料有限公司 | Silicon-contained I-ray ultraviolet positive photoresist and film-forming resin thereof |
| CN101974201A (en) * | 2010-09-30 | 2011-02-16 | 昆山西迪光电材料有限公司 | Ultraviolet thick-film photoresist and film-forming resin thereof |
| CN103964698A (en) * | 2013-02-04 | 2014-08-06 | 台湾永光化学工业股份有限公司 | Use of positive photoresist composition |
| CN104965389A (en) * | 2015-01-08 | 2015-10-07 | 苏州瑞红电子化学品有限公司 | FPD/TP positive photoresist used for flexible substrate |
| CN105607418A (en) * | 2015-12-23 | 2016-05-25 | 苏州瑞红电子化学品有限公司 | High heat-resistant photoresist composition and application technology thereof |
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