CN108987508A - The direct-connected solar cell module of single side and preparation method - Google Patents
The direct-connected solar cell module of single side and preparation method Download PDFInfo
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- CN108987508A CN108987508A CN201810879244.XA CN201810879244A CN108987508A CN 108987508 A CN108987508 A CN 108987508A CN 201810879244 A CN201810879244 A CN 201810879244A CN 108987508 A CN108987508 A CN 108987508A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 238000005245 sintering Methods 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 48
- 229910052710 silicon Inorganic materials 0.000 claims description 48
- 239000010703 silicon Substances 0.000 claims description 48
- 238000009792 diffusion process Methods 0.000 claims description 7
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- 238000000137 annealing Methods 0.000 claims description 5
- 239000006227 byproduct Substances 0.000 claims description 5
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- 239000002002 slurry Substances 0.000 claims description 4
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- 238000003466 welding Methods 0.000 abstract description 14
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- 238000000034 method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000004021 metal welding Methods 0.000 description 7
- 230000000712 assembly Effects 0.000 description 4
- 238000000429 assembly Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical group CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
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- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/043—Mechanically stacked PV cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
- H01L31/188—Apparatus specially adapted for automatic interconnection of solar cells in a module
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a kind of direct-connected solar cell modules of single side, including the first solar battery sheet;First solar battery sheet includes the first front electrode and the first back surface field, first front electrode, the first back surface field are equipped with lateral main grid, at least one of the lateral front main grid of first front electrode, lateral back side main grid of the first back surface field are equipped with contact, and the contact is set to the end of lateral main grid;The long side of adjacent solar battery sheet is overlapped, and forms face contact;Adjacent solar battery sheet is connected by common contact, and forms battery strings by sintering.Correspondingly, the present invention also provides a kind of preparation methods of the direct-connected solar cell module of single side.Using the present invention, structure is simple, and gap is small between cell piece, reduces the power loss of welding, and the high reliablity of battery component, and photoelectric conversion efficiency is high.
Description
Technical field
The present invention relates to area of solar cell more particularly to a kind of direct-connected solar cell module of single side and its preparation sides
Method.
Background technique
Conventional crystalline silicon component cell piece all uses metal welding band connection substantially.There are three obvious for this connection type
Defect: first is that metal welding band and cell piece gap occupy the positive light-receiving area of component;Second is that there are line losses for metal welding band;Third is that
Welding is expanded with heat and contract with cold by the temperature change period is easy to happen fracture and corrosion, these three modes are to the transfer efficiency of component and property
Stabilizability has large effect.
Summary of the invention
Technical problem to be solved by the present invention lies in, a kind of direct-connected solar cell module of single side is provided, structure is simple,
Gap is small between cell piece, reduces the power loss of welding, and the high reliablity of battery component, and photoelectric conversion efficiency is high.
The technical problems to be solved by the invention also reside in, and provide a kind of preparation side of direct-connected solar cell module of single side
Method, simplification of flowsheet reduce processing step, and cost is relatively low, easy to spread, and photoelectric conversion efficiency is high.
In order to solve the above-mentioned technical problems, the present invention provides a kind of direct-connected solar cell modules of single side, including at least
Two solar battery sheets, the solar battery sheet stack gradually arrangement, form battery strings, the solar battery sheet is at least
Including the first solar battery sheet;
First solar battery sheet include the first front electrode and the first back surface field, first front electrode,
First back surface field is equipped with lateral main grid, lateral front main grid, the transverse direction of the first back surface field of first front electrode
At least one of back side main grid is equipped with contact, and the contact is set to the end of lateral main grid;
The long side of adjacent solar battery sheet is overlapped, and forms face contact;
Adjacent solar battery sheet is connected by common contact, and forms battery strings by sintering.
As the preferred embodiment of above scheme, the solar battery sheet is to pass through pretreated full wafer silicon wafer.
As the preferred embodiment of above scheme, the pretreatment successively includes: to form flannelette, expansion in the front of full wafer silicon wafer
It dissipates and forms PN junction, doping, polished backside, positive backside deposition passivating film, back side fluting.
As the preferred embodiment of above scheme, the lateral front main grid of first front electrode is equipped with contact, described
Contact is set to the end of lateral front main grid;
The contact of the lateral front main grid of each solar battery sheet is set to the back side of preceding a piece of solar battery sheet, and preceding
The lateral back side main grid of a piece of solar battery sheet connects.
As the preferred embodiment of above scheme, the contact is circular contact, rectangular contacts, regular polygon contact or linear
Contact.
As the preferred embodiment of above scheme, the solar battery sheet further includes the second solar battery sheet, and second too
Positive energy cell piece includes the second front electrode and the second back surface field, and second front electrode, the second back surface field are equipped with
Lateral main grid, at least one of second front electrode, second back surface field are equipped with longitudinal main grid, the longitudinal direction main grid with
Lateral main grid connection.
As the preferred embodiment of above scheme, the solar battery sheet includes the second solar battery sheet A, second sun
It can cell piece B and the first solar battery sheet;
The front electrode of the second solar battery sheet A include a plurality of lateral front main grid, 1 longitudinal front main grid and
The a plurality of secondary grid in front, back surface field are equipped with a plurality of lateral back side main grid;
The front electrode of the second solar battery sheet B includes the secondary grid of a plurality of lateral front main grid and a plurality of front, institute
The end for stating lateral front main grid is equipped with contact, and back surface field is equipped with a plurality of lateral back side main grid, 1 longitudinal back side main grid;
The front electrode of first solar battery sheet includes a plurality of lateral front main grid, is set to lateral front main grid end
The secondary grid in the contact in portion and a plurality of front, back surface field are equipped with a plurality of lateral back side main grid;
Second solar battery sheet A, the first solar battery sheet, the second solar battery sheet B stack gradually connection.
As the preferred embodiment of above scheme, the width of the contact is at least bigger by 20% than the width of lateral main grid.
Correspondingly, invention additionally discloses a kind of preparation methods of the direct-connected solar cell module of single side, comprising:
(1) it is pre-processed in silicon wafer, and prints front electrode, back surface field and back side main grid in silicon chip surface, obtained
Solar battery sheet;
(2) solar battery sheet is laminated to arrangement one by one, adjacent solar battery sheet contact connection forms battery strings,
And it dries;
(3) high temperature sintering is carried out to battery strings, makes slurry curing;
(4) anti-LID annealing is carried out after stepping test to battery strings and is packaged into component.
As the preferred embodiment of above scheme, silicon wafer is pre-processed, the pretreatment includes:
(1.1) flannelette is formed in front side of silicon wafer;
(1.2) high square resistance diffusion is carried out in front side of silicon wafer, forms PN junction;
(1.3) selective laser doping is carried out to front side of silicon wafer;
(1.4) by-product and periphery P N knot that removal diffusion process is formed, and silicon chip back side is polished;
(1.5) passivating film and protective film are deposited in silicon chip back side;
(1.6) passivating film and antireflective film are deposited in front side of silicon wafer;
(1.7) laser slotting is carried out to the passivating film of silicon chip back side and protective film.
The invention has the following beneficial effects:
The present invention provides a kind of direct-connected solar cell module of single side, including at least two solar battery sheets, solar energy
Cell piece is to pass through pretreated full wafer silicon wafer, and the long side of adjacent solar battery sheet is overlapped, and forms face contact;And it is adjacent
Solar battery sheet by common contact connect, and by sintering form battery strings, have the advantage that
1, in each battery strings, solar battery sheet is arranged by the way of the stacking of front and back, and positive rear electrode passes through touching
Point is directly connected to, and surface does not have a metal welding band, also very close to each other between cell piece, takes full advantage of face workable for assembly surface
Product, reduces the line loss of conventional metals welding, therefore greatly improves the transfer efficiency of component;
2, traditional metal welding band connection mode is line connection, and invention components are then face connection, effectively improve electricity
Attachment force between the piece of pond keeps component more reliable;
3, it is connected between adjacent full wafer by common contact inside battery strings of the present invention, replaces the welding between conventional batteries
Connection, does not need to be sliced, and save the connection of welding, enormously simplifies the manufacturing process of single sided assemblies, reduce equipment cost and
Production cost;
4, it is connected between the adjacent full wafer of the present invention by common contact, compared with the mode of conductive glue connection, reduces string
Join resistance and resistance loss, is obviously improved the power of single sided assemblies;
5, contact between the adjacent full wafer of the present invention, can form battery strings by sintering, i.e., the preparation work of battery strings
Skill incorporates in conventional solar cells manufacturing process, and gap is small between further cell piece, reduces the power loss of welding;
6, process flow of the invention is relatively simple, and each processing step is all more mature, and incorporates regular solar
In battery manufacturing process, the probability to malfunction in manufacturing process is reduced, the reliability of product is increased.
Detailed description of the invention
Fig. 1 is the positive structure schematic of the first solar battery sheet of the invention;
Fig. 2 is the structure schematic diagram of the first solar battery sheet of the invention;
Fig. 3 is schematic diagram of the invention components first embodiment in lamination process;
Fig. 4 is the positive structure schematic of invention components first embodiment;
Fig. 5 is the structure schematic diagram of invention components first embodiment;
Fig. 6 is the sectional view of component shown in Fig. 3;
Fig. 7 is the positive structure schematic of the second solar battery sheet A of the present invention;
Fig. 8 is the structure schematic diagram of the second solar battery sheet A of the present invention;
Fig. 9 is the positive structure schematic of the second solar battery sheet B of the present invention;
Figure 10 is the structure schematic diagram of the second solar battery sheet B of the present invention;
Figure 11 is schematic diagram of the invention components second embodiment in lamination process;
Figure 12 is the positive structure schematic of invention components second embodiment;
Figure 13 is the structure schematic diagram of invention components second embodiment;
Figure 14 is the sectional view of invention components second embodiment;
Figure 15 is the flow chart of the preparation method of the direct-connected solar cell module of single side of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, the present invention is made into one below in conjunction with attached drawing
Step ground detailed description.
The present invention provides a kind of direct-connected solar cell modules of single side comprising at least two solar battery sheets, institute
It states solar battery sheet and stacks gradually arrangement, form battery strings.Solar battery sheet of the invention includes at least the first solar energy
Cell piece.
As shown in Figure 1, 2, the first solar battery sheet 1A includes the first front electrode and the first back surface field, described
First front electrode, the first back surface field are equipped with lateral main grid, the lateral front main grid of first front electrode, the first back
At least one of lateral back side main grid of face electric field is equipped with contact, and the contact is set to the end of lateral main grid.
Specifically, there are many embodiments for the electrode of shown first solar battery sheet, comprising:
(1) front electrode of the first solar battery sheet 1A includes a plurality of lateral front main grid 11, is set to laterally just
The secondary grid 13 in the contact 111 of 11 end of face main grid and a plurality of front;Back surface field 16 is equipped with a plurality of lateral back side main grid 14, Fig. 1,2
Shown in embodiment belong to situation in (1).
(2) front electrode of first solar battery sheet includes the secondary grid of a plurality of lateral front main grid and a plurality of front;
Back surface field is equipped with a plurality of lateral back side main grid, set on the contact of lateral back side main grid end;
(3) front electrode of first solar battery sheet includes a plurality of lateral front main grid, is set to laterally front master
The secondary grid in the contact in grid end portion and a plurality of front;Back surface field is equipped with a plurality of lateral back side main grid, is set to lateral back side main grid end
Contact.
That is, the lateral front main grid of the first front electrode is equipped with the lateral back side main grid of contact or the first back surface field
The lateral back side main grid of lateral front main grid, the first back surface field equipped with contact or the first front electrode is equipped with contact.
Preferably, the contact 111 is circular contact, rectangular contacts, regular polygon contact or linear contact.It is described linear
Contact may include the linear of variform, such as straight line, curve, camber line etc..
It should be noted that the contact may be arranged as other shapes, such as diamond shape in addition to above-mentioned shape, half
Circle or other irregular shapes, embodiment are not limited to illustrated embodiment of the present invention.
It should be noted that main grid of the invention and secondary grid can be the forms such as straight line, segmentation, curve, laser cut line
It is also possible to straight line or curve, and is not limited thereto.Moreover, the present invention is also provided with ridge other than main grid, secondary grid
Bone, the embodiment multiplicity of the solar cell module, embodiment of the present invention are not limited to illustrated embodiment.
As shown in figure 3, the present invention, during arrangement is laminated, adjacent solar battery sheet 1 is connected by common contact 111
It connects, the contact 111 of the lateral front main grid of each solar battery sheet 1 is set to the back side of preceding a piece of solar battery sheet 1, and preceding
The lateral back side main grid 14 of a piece of solar battery sheet 1 connects.
In each battery strings, solar battery sheet is arranged by the way of the stacking of front and back, and positive rear electrode passes through contact
It being directly connected to, surface does not have a metal welding band, and it is also very close to each other between cell piece, area workable for assembly surface is taken full advantage of,
The line loss of conventional metals welding is reduced, therefore greatly improves the transfer efficiency of component;
Traditional metal welding band connection mode is line connection, and invention components are then face connection, effectively improve battery
Attachment force between piece keeps component more reliable.
As shown in Fig. 4, Fig. 5, Fig. 6, the long side of adjacent solar battery sheet 1 is overlapped, and forms face contact 20;It is adjacent too
Positive energy cell piece 1 is connected by common contact 111, and forms battery strings 10 by sintering.
The full wafer silicon wafer of the industry, general length and width are equal, and size is mostly 156 ± 2mm, and the present invention uses full wafer silicon wafer layer
It is folded, simple and convenient, high production efficiency.
It is connected between adjacent full wafer by common contact inside battery strings of the present invention, the welding between conventional batteries is replaced to connect
It connects, does not need to be sliced, and save the connection of welding, enormously simplify the manufacturing process of single sided assemblies, reduce equipment cost and life
Produce cost.
It is connected between the adjacent full wafer of the present invention by common contact, compared with the mode of conductive glue connection, reduces series connection
Resistance and resistance loss are obviously improved the power of single sided assemblies.
Contact between the adjacent full wafer of the present invention can form battery strings by sintering, i.e., the preparation process of battery strings
It incorporates in conventional solar cells manufacturing process, gap is small between further cell piece, reduces the power loss of welding.
Battery strings 10 of the invention can be set to a row or multi-row battery strings, the solar battery sheet of every row's battery strings 10
Pass through series connection between 1.And when battery strings 10 are set as multiple rows of, lead between the solar battery sheet 1 of single battery strings 10
Cross series connection;By the connection of in parallel or other modes between difference row's battery strings 10, connection type multiplicity, the present invention is not
This is defined.Preferably, it is connected in parallel or series between different row's battery strings 10 by welding.
As shown in FIG. 6 to 13, the present invention also provides the second embodiments of the direct-connected solar cell module of single side, at this time also
Including second solar battery sheet;
As shown in Fig. 7 and Fig. 8, Fig. 9 and Figure 10, second solar battery sheet includes the second front electrode and the second back
Face electric field, second front electrode, the second back surface field are equipped with lateral main grid, second front electrode, second back side
At least one of electric field is equipped with longitudinal main grid, and the longitudinal direction main grid is connect with lateral main grid.
Specifically, there are many embodiments for the electrode of shown second solar battery sheet, comprising:
(1) as shown in Figure 7 and Figure 8, the front electrode of the second solar battery sheet 1B includes that a plurality of laterally front is main
The secondary grid 13 of grid 11,1 longitudinal front main grids 12 and a plurality of front, back surface field 16 are equipped with a plurality of lateral back side main grid 14, name
For the second solar battery sheet A;
(2) as shown in Figure 9 and Figure 10, the front electrode of the second solar battery sheet 1C includes that a plurality of laterally front is main
The secondary grid 13 of grid 11 and a plurality of front, the end of the transverse direction front main grid 11 are equipped with contact 111, and back surface field 16 is equipped with a plurality of cross
Rearwardly 14,1 longitudinal back side main grids 15 of main grid, are named as the second solar battery sheet B.
As illustrated in figs. 11-14, battery strings 10 of the invention can be set to a row or multi-row battery strings, every row's battery strings packet
Include a second solar battery sheet 1B, the first solar battery sheet 1A of one or more and second solar battery sheet
1C, the second solar battery sheet 1B, the first solar battery sheet 1A, the second solar battery sheet 1C stack gradually connection.Second
Solar battery sheet 1B, the second solar battery sheet 1C longitudinal main grid be used as battery strings positive and negative anodes.
During arrangement is laminated, adjacent solar battery sheet 1 is connected the present invention by common contact 111, Mei Yitai
The contact 111 of the lateral front main grid of positive energy cell piece 1 is set to the back side of preceding a piece of solar battery sheet 1, with the preceding a piece of sun
Lateral back side main grid 14 connection of energy cell piece 1.The long side of adjacent solar battery sheet 1 is overlapped, and forms face contact 20;It is adjacent
Solar battery sheet 1 connected by common contact 111, and battery strings 10 are formed by sintering.
Pass through series connection between the solar battery sheet 1 of every row's battery strings 10.And when battery strings 10 are set as multiple rows of,
Pass through series connection between the solar battery sheet 1 of single battery strings 10;Between difference row's battery strings 10 by it is in parallel or its
He connects mode, and connection type multiplicity, the present invention is defined not to this.Preferably, pass through between different row's battery strings 10
Welding connects longitudinal main grid in parallel or series, and connection is simple, highly reliable.
Further, the difference embodiment in conjunction with shown in Fig. 1-14, the solar battery sheet 1 is by pretreated
Full wafer silicon wafer.It is described pretreatment successively include: full wafer silicon wafer front formed flannelette, diffuse to form PN junction, doping, the back side throw
Light, positive backside deposition passivating film, back side fluting.
The present invention incorporates the preparation process of battery strings in conventional solar cells manufacturing process, in conventional solar cells
Sintering step before can complete the laminations of battery strings, finally by once sintered, so that it may realize the connection of battery strings,
Gap is small between further cell piece, reduces the power loss of welding
Process flow of the invention is relatively simple, and each processing step is all more mature, and incorporates regular solar electricity
In the manufacturing process of pond, the probability to malfunction in manufacturing process is reduced, the reliability of product is increased.
Preferably, the width of the contact 111 is at least bigger by 20% than the width of lateral main grid.When the width of the contact 111
When degree bigger than the width of lateral main grid 20%, it is ensured that adjacent solar battery sheet passes through the connected stabilization of lateral main grid
Property, reduce series resistance and resistance loss.When the width of contact 111 greatly to certain proportion when, contact 111 and contact 111 it
Between be connected, form a longitudinal main grid.
More preferably, the width of the contact 111 is 20-50% bigger than the width of lateral main grid, it is ensured that the adjacent sun
Energy cell piece 1 passes through the connected stability of lateral main grid, reduces series resistance and resistance loss, is obviously improved the function of component
Rate.Moreover, it is also possible to save the slurry of overlapping region, make with the implementation of lower cost.When the width of contact is than lateral main grid
When the big 20-50% of width, series resistance and resistance loss can additionally reduce by 25% under the premise of base case of the present invention.
Correspondingly, invention additionally discloses a kind of preparation methods of the direct-connected solar cell module of single side, and as shown in figure 15, packet
It includes:
S101, it is pre-processed in silicon wafer, and prints front electrode, back surface field and back side main grid in silicon chip surface, obtained
To solar battery sheet.
Specifically, printing front electrode, back surface field and back side main grid in silicon wafer according to the design of electrode.
S102, solar battery sheet is laminated to arrangement one by one, adjacent solar battery sheet contact connection forms battery
String, and dry.
As shown in figure 3, the present invention, during arrangement is laminated, adjacent solar battery sheet 1 is connected by common contact 111
It connects, the contact 111 of the lateral front main grid of each solar battery sheet 1 is set to the back side of preceding a piece of solar battery sheet 1, and preceding
The lateral back side main grid 14 of a piece of solar battery sheet 1 connects.
S103, high temperature sintering is carried out to battery strings, makes slurry curing.
S104, battery strings are carried out with anti-LID annealing, after stepping test, is packaged into component.
It should be noted that anti-LID annealing just refers to anti-photoluminescence decaying annealing.
After stepping test, by the cell package of identical gear to the same component, guarantee component Maximum Power Output and
Guarantee the stability of power output.
Further, described pre-process includes:
(1.1) flannelette is formed in front side of silicon wafer;
The silicon wafer can select P-type silicon or N-type silicon.
(1.2) high square resistance diffusion is carried out in front side of silicon wafer, forms PN junction;
Sheet resistance is generally preferred to 80-200 Ω/, but not limited to this.
(1.3) selective laser doping is carried out to front side of silicon wafer;
Laser doping pattern needs are corresponding with subsequent front electrode pair gate pattern, use prior art design i.e.
It can.
(1.4) by-product and periphery P N knot that removal diffusion process is formed, and silicon chip back side is polished;
N-type silicon is formed in front side of silicon wafer according to phosphorus diffusion, by-product is phosphorosilicate glass;
Front side of silicon wafer is diffused according to boron and forms P-type silicon, and by-product is Pyrex.
(1.5) passivating film and protective film are deposited in silicon chip back side;
The passivating film is preferably silicon dioxide film, di-aluminium trioxide film or silicon nitride film, and protective film preferably nitrogenizes
Silicon fiml, silicon oxynitride film, silicon dioxide film or the composite membrane being made of above-mentioned film, but not limited to this.
(1.6) passivating film and antireflective film are deposited in front side of silicon wafer;
The passivating film is preferably silicon dioxide film, di-aluminium trioxide film or silicon nitride film;The antireflective film is preferably nitrogen
SiClx film or silicon dioxide film, but not limited to this.
(1.7) laser slotting is carried out to the passivating film of silicon chip back side and protective film.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention rather than protects to the present invention
The limitation of range is protected, although the invention is described in detail with reference to the preferred embodiments, those skilled in the art should
Understand, it can be with modification or equivalent replacement of the technical solution of the present invention are made, without departing from the essence of technical solution of the present invention
And range.
Claims (10)
1. a kind of direct-connected solar cell module of single side, including at least two solar battery sheets, the solar battery sheet according to
Secondary stacking arrangement, forms battery strings, which is characterized in that the solar battery sheet includes the first solar battery sheet;
First solar battery sheet includes the first front electrode and the first back surface field, first front electrode, first
Back surface field is equipped with lateral main grid, the lateral back side of the lateral front main grid of first front electrode, the first back surface field
At least one of main grid is equipped with contact, and the contact is set to the end of lateral main grid;
The long side of adjacent solar battery sheet is overlapped, and forms face contact;
Adjacent solar battery sheet is connected by common contact, and forms battery strings by sintering.
2. the direct-connected solar cell module of single side as described in claim 1, which is characterized in that the solar battery sheet is to pass through
Pretreated full wafer silicon wafer.
3. the direct-connected solar cell module of single side as claimed in claim 2, which is characterized in that it is described pretreatment successively include:
The front of full wafer silicon wafer forms flannelette, diffuses to form PN junction, doping, polished backside, positive backside deposition passivating film, back side fluting.
4. the direct-connected solar cell module of single side as described in claim 1,2 or 3, which is characterized in that first front electrode
Lateral front main grid be equipped with contact, the contact is set to the end of lateral front main grid;
The contact of the lateral front main grid of each solar battery sheet is set to the back side of preceding a piece of solar battery sheet, and preceding a piece of
The lateral back side main grid of solar battery sheet connects.
5. the direct-connected solar cell module of single side as claimed in claim 4, which is characterized in that the contact is circular contact, square
Shape contact, regular polygon contact or linear contact.
6. the direct-connected solar cell module of single side as described in claim 1, which is characterized in that the solar battery sheet further includes
Second solar battery sheet, the second solar battery sheet include the second front electrode and the second back surface field, second front
Electrode, the second back surface field are equipped with lateral main grid, and at least one of second front electrode, second back surface field are equipped with
Longitudinal main grid, the longitudinal direction main grid are connect with lateral main grid.
7. the direct-connected solar cell module of single side as claimed in claim 6, which is characterized in that the solar battery sheet includes the
Two solar battery sheet A, the second solar battery sheet B and the first solar battery sheet;
The front electrode of the second solar battery sheet A includes a plurality of lateral front main grid, 1 longitudinal front main grid and a plurality of
Positive pair grid, back surface field are equipped with a plurality of lateral back side main grid;
The front electrode of the second solar battery sheet B includes the secondary grid of a plurality of lateral front main grid and a plurality of front, the cross
It is equipped with contact to the end of front main grid, back surface field is equipped with a plurality of lateral back side main grid, 1 longitudinal back side main grid;
The front electrode of first solar battery sheet includes a plurality of lateral front main grid, set on lateral front main grid end
The secondary grid in contact and a plurality of front, back surface field are equipped with a plurality of lateral back side main grid;
Second solar battery sheet A, the first solar battery sheet, the second solar battery sheet B stack gradually connection.
8. the direct-connected solar cell module of single side as described in claim 1, which is characterized in that the width of the contact is more main than laterally
The width of grid is at least big by 20%.
9. a kind of preparation method of such as direct-connected solar cell module of the described in any item single sides of claim 1-8, feature exist
In, comprising:
(1) it is pre-processed in silicon wafer, and prints front electrode, back surface field and back side main grid in silicon chip surface, obtain the sun
It can cell piece;
(2) solar battery sheet is laminated to arrangement one by one, adjacent solar battery sheet contact connection forms battery strings, and dry
It is dry;
(3) high temperature sintering is carried out to battery strings, makes slurry curing;
(4) anti-LID annealing is carried out after stepping test to battery strings and is packaged into component.
10. the preparation method of the direct-connected solar cell module of single side as claimed in claim 9, which is characterized in that carried out to silicon wafer
Pretreatment, the pretreatment include:
(1.1) flannelette is formed in front side of silicon wafer;
(1.2) high square resistance diffusion is carried out in front side of silicon wafer, forms PN junction;
(1.3) selective laser doping is carried out to front side of silicon wafer;
(1.4) by-product and periphery P N knot that removal diffusion process is formed, and silicon chip back side is polished;
(1.5) passivating film and protective film are deposited in silicon chip back side;
(1.6) passivating film and antireflective film are deposited in front side of silicon wafer;
(1.7) laser slotting is carried out to the passivating film of silicon chip back side and protective film.
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