CN108899376B - Solar cell and manufacturing method of selective emitter structure thereof - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 68
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 68
- 239000010703 silicon Substances 0.000 claims abstract description 68
- 238000009792 diffusion process Methods 0.000 claims abstract description 23
- 238000005530 etching Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 11
- 238000007796 conventional method Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- -1 phosphorus ions Chemical class 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000010329 laser etching Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention provides a solar cell and a manufacturing method of a selective emitter structure thereof, which comprises the following steps of providing a pretreated silicon wafer; performing first diffusion on the silicon wafer to form a first doping layer on the front surface of the silicon wafer; performing second diffusion on the silicon wafer, and forming a second doping layer above the first doping layer, wherein the doping concentration of the second doping layer is greater than that of the first doping layer; reserving a second doping layer of the preset front electrode regions, and etching away the second doping layer between the preset front electrode regions; and forming a front electrode above the second doping layer of the preset front electrode area. The second doping layer, namely the heavy doping layer, and the first doping layer, namely the light doping layer, are formed by two times of diffusion, so that the doping concentration of the light doping layer can be very low, the doping concentration of the heavy doping layer can be very high, the doping concentration difference of the heavy doping layer and the light doping layer can be further increased, and the conversion efficiency of the solar cell is improved.
Description
Technical Field
The invention relates to the technical field of solar energy, in particular to a solar cell and a manufacturing method of a selective emitter structure of the solar cell.
Background
The ultimate goal of solar cells is to reduce cost and increase efficiency, which has reached its limits with the current standard solar cell production process. Among many parameters of solar cells, a Selective-emitter (SE) is one of the parameters that most affect the conversion efficiency of PN junction crystalline silicon solar cells.
The selective emitter is of a structure that heavy doping is carried out on the contact part of the front electrode (metal grid line) and the silicon wafer, and light doping is carried out between the front electrodes, so that the composition of a diffusion layer can be reduced, the short-wave response of light is improved, and meanwhile, the contact resistance of the front electrodes and the silicon wafer is reduced, so that the short-circuit current, the open-circuit voltage and the filling factor are better improved, and the conversion efficiency of the solar cell can be improved.
The conventional method for manufacturing the selective emitter structure comprises the following steps: after the silicon wafer which is cleaned and textured is subjected to primary diffusion, wax is sprayed on the position of the front electrode on the surface of the silicon wafer, and then HF and HNO are used3The mixed solution etches the area without wax spraying to form a heavily doped structure at the position of the front electrode and a lightly doped structure at other positions. Or after the silicon wafer subjected to cleaning and texturing is subjected to primary diffusion, laser is used for deepening the junction of the PN junction at the position of the front electrode, and a structure which is heavily doped at the position of the front electrode and lightly doped at other positions can be formed.
However, in the conventional method for manufacturing the selective emitter by one-time diffusion, because the surface concentration of the heavily doped region is controlled to be large enough to ensure the ohmic contact performance between the front electrode and the silicon wafer, the surface concentration of the lightly doped region cannot be reduced, so that the doping concentration difference between the heavily doped region and the lightly doped region is small, the open-circuit voltage and the short-circuit current cannot be greatly improved, and the conversion efficiency of the solar cell cannot be greatly improved.
Disclosure of Invention
In view of this, the invention provides a solar cell and a method for manufacturing a selective emitter structure thereof, so as to solve the problem that the conversion efficiency of the solar cell cannot be greatly improved due to the small difference between the doping concentrations of a heavily doped region and a lightly doped region caused by the conventional method for manufacturing the selective emitter.
In order to achieve the purpose, the invention provides the following technical scheme:
a method for manufacturing a selective emitter structure comprises the following steps:
providing a pretreated silicon wafer;
performing first diffusion on the silicon wafer to form a first doping layer on the front surface of the silicon wafer;
removing impurities on the surface of the silicon wafer, performing second diffusion on the silicon wafer, and forming a second doping layer above the first doping layer, wherein the doping concentration of the second doping layer is greater than that of the first doping layer;
reserving a second doping layer of the preset front electrode regions, and etching away the second doping layer between the preset front electrode regions to expose the first doping layer between the preset front electrode regions;
and forming a front electrode above the second doping layer of the preset front electrode area.
Preferably, before forming the front electrode, the method further includes:
and forming an antireflection film on the surface of the silicon wafer.
Preferably, the step of reserving the second doping layer of the preset front electrode regions and etching away the second doping layer between the preset front electrode regions comprises:
forming a mask on the surface of the silicon wafer, wherein the mask covers the preset front electrode areas and exposes the areas between the preset front electrode areas;
and etching the second doping layer in the region exposed by the mask to expose the first doping layer below the second doping layer.
Preferably, the mask is formed on the surface of the silicon wafer by using a wax printing process.
Preferably, the doping concentration of the first doping layer is 5e19cm-3～6e19cm-3Within the scope, including the endpoints.
Preferably, the doping concentration of the second doping layer is 4e20cm-3～5e20cm-3Within the scope, including the endpoints.
A solar cell, wherein the selective emitter structure is manufactured by the method for manufacturing the selective emitter structure, the solar cell comprises:
the front surface of the silicon wafer is provided with a first doping layer and a second doping layer positioned above the first doping layer, the second doping layer is exposed out of the first doping layer between preset front surface electrode regions, and the doping concentration of the second doping layer is greater than that of the first doping layer;
and the front electrode is positioned in the preset front electrode area and covers the front electrode of the second doped layer, and the front electrode does not cover the first doped layer between the preset front electrode areas.
Preferably, the method further comprises the following steps:
an antireflection film positioned between the second doping layer and the front electrode;
and the aluminum back surface field and the back surface electrode are positioned on the back surface of the silicon chip.
Preferably, the doping concentration of the first doping layer is 5e19cm-3～6e19cm-3Within the scope, including the endpoints.
Preferably, the doping concentration of the second doping layer is 4e20cm-3～5e20cm-3Within the scope, including the endpoints.
Compared with the prior art, the technical scheme provided by the invention has the following advantages:
according to the solar cell and the manufacturing method of the selective emitter structure of the solar cell, after a first doping layer is formed on the front surface of a silicon wafer, a second doping layer is formed above the first doping layer, the concentration of the second doping layer is larger than that of the first doping layer, then the second doping layer between preset front electrode areas is etched, the first doping layer below the second doping layer in the area is exposed, a front electrode is formed above the second doping layer in the preset front electrode area, and the selective emitter structure with the corresponding area of the front electrode being a heavy doping area and the area between the front electrodes being a light doping area can be formed;
in addition, the second doping layer, namely the heavy doping layer, and the first doping layer, namely the light doping layer, are formed by two times of diffusion, so that the doping concentrations of the heavy doping layer and the light doping layer can be respectively controlled, the doping concentration of the light doping layer can be enabled to be very low, the doping concentration of the heavy doping layer can be enabled to be very high, the doping concentration difference between the heavy doping layer and the light doping layer can be further increased, and the conversion efficiency of the solar cell can be improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a flowchart of a method for fabricating a selective emitter structure according to an embodiment of the invention;
fig. 2a to fig. 2e are structure flow charts of a method for fabricating a selective emitter structure according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a solar cell according to an embodiment of the present invention.
Detailed Description
As described in the background art, the conversion efficiency of the conventional selective emitter crystalline silicon solar cell is difficult to be greatly improved, and the inventor researches and discovers that the surface concentration of the heavily doped region needs to be controlled to be large enough to ensure the ohmic contact performance between the front electrode and the silicon wafer in the conventional method for manufacturing the selective emitter by one-time diffusion, so that the surface concentration of the lightly doped region cannot be reduced, the doping concentration difference between the heavily doped region and the lightly doped region is small, the open-circuit voltage and the short-circuit current cannot be greatly improved, and the conversion efficiency of the solar cell cannot be greatly improved.
Based on this, the present invention provides a method for fabricating a selective emitter structure to overcome the above problems in the prior art, including:
providing a pretreated silicon wafer;
performing first diffusion on the silicon wafer to form a first doping layer on the front surface of the silicon wafer;
removing impurities on the surface of the silicon wafer, performing second diffusion on the silicon wafer, and forming a second doping layer above the first doping layer, wherein the doping concentration of the second doping layer is greater than that of the first doping layer;
reserving a second doping layer of the preset front electrode regions, and etching away the second doping layer between the preset front electrode regions to expose the first doping layer between the preset front electrode regions;
and forming a front electrode above the second doping layer of the preset front electrode area.
The present invention also provides a solar cell, comprising:
the front surface of the silicon wafer is provided with a first doping layer and a second doping layer positioned above the first doping layer, the second doping layer is exposed out of the first doping layer between preset front surface electrode regions, and the doping concentration of the second doping layer is greater than that of the first doping layer;
and the front electrode is positioned in the preset front electrode area and covers the front electrode of the second doped layer, and the front electrode does not cover the first doped layer between the preset front electrode areas.
The invention provides a solar cell and a manufacturing method of a selective emitter structure thereof.A first doping layer is formed on the front surface of a silicon wafer, a second doping layer is formed above the first doping layer, the concentration of the second doping layer is greater than that of the first doping layer, then the second doping layer between preset front electrode areas is etched, the first doping layer below the second doping layer in the area is exposed, a front electrode is formed above the second doping layer in the preset front electrode area, and the selective emitter structure with a heavily doped area corresponding to the front electrode and a lightly doped area between the front electrodes can be formed;
in addition, the second doping layer, namely the heavy doping layer, and the first doping layer, namely the light doping layer, are formed by two times of diffusion, so that the doping concentrations of the heavy doping layer and the light doping layer can be respectively controlled, the doping concentration of the light doping layer can be enabled to be very low, the doping concentration of the heavy doping layer can be enabled to be very high, the doping concentration difference between the heavy doping layer and the light doping layer can be further increased, and the conversion efficiency of the solar cell can be improved.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, so that the above is the core idea of the present invention, and the above objects, features and advantages of the present invention can be more clearly understood. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
An embodiment of the present invention provides a method for manufacturing a selective emitter structure, as shown in fig. 1, including:
s101: providing a pretreated silicon wafer;
s102: performing first diffusion on the silicon wafer to form a first doping layer on the front surface of the silicon wafer;
s103: removing impurities on the surface of the silicon wafer, performing second diffusion on the silicon wafer, and forming a second doping layer above the first doping layer, wherein the doping concentration of the second doping layer is greater than that of the first doping layer;
s104: reserving a second doping layer of the preset front electrode regions, and etching away the second doping layer between the preset front electrode regions to expose the first doping layer between the preset front electrode regions;
s105: and forming a front electrode above the second doping layer of the preset front electrode area.
Wherein, before forming the front electrode, further comprising: and forming an antireflection film on the surface of the silicon wafer.
Reserving the second doping layer of the preset front electrode regions, and etching away the second doping layer between the preset front electrode regions, wherein the steps of:
forming a mask on the surface of the silicon wafer, wherein the mask covers the preset front electrode areas and exposes the areas between the preset front electrode areas;
and etching the second doping layer in the region exposed by the mask to expose the first doping layer below the second doping layer.
In this embodiment, the mask is formed on the surface of the silicon wafer by using a wax printing process, but the invention is not limited thereto, and in other embodiments, the mask may also be a photoresist film, and the like, which is not described herein again. In other embodiments of the present invention, a laser etching method or other methods may also be used to etch the second doped layer between the front electrodes.
The following describes a manufacturing process of the selective emitter structure with reference to the structural diagram.
First, as shown in fig. 2a, a silicon wafer 1 is provided which has been subjected to pretreatment, such as cleaning and texturing. Optionally, the silicon wafer 1 in this embodiment is a P-type monocrystalline silicon wafer, although the invention is not limited thereto, and in other embodiments, the silicon wafer 1 may also be an N-type silicon wafer.
Then, as shown in fig. 2b, the silicon wafer 1 is diffused for the first time, the doping ions are phosphorus ions, and the first doping layer 10 is formed on the surface of the silicon wafer 1, that is, a PN junction is formed in the silicon wafer 1.
Then, as shown in fig. 2c, impurities such as phosphosilicate glass and the like on the surface of the silicon wafer 1 are removed, RCA cleaning is performed on the silicon wafer 1, for example, a mixed solution of hydrochloric acid and hydrogen peroxide is used to clean the silicon wafer 1, then, the silicon wafer 1 is subjected to second diffusion, a second doped layer 11 is formed on the first doped layer 10 on the front surface of the silicon wafer 1, the depth of the second doped layer 11 is smaller than that of the first doped layer 10, the second diffusion is the same as that of the first diffusion and is phosphorus ions, and the difference is that the doping concentration of the second doped layer 11 is greater than that of the first doped layer 10, that is, the second doped layer 11 is a heavily doped layer, and the first doped layer 10 is a lightly doped layer. And, the depth of the second doping layer 11 is less than the depth of the first doping layer 10, so that after etching the second doping layer 11 between the preset front electrode regions, the first doping layer 10 thereunder can be exposed. Optionally, the ion doping concentration of the first doping layer 10 is 5e19cm-3～6e19cm-3Second doping within the range, including the endpointsThe ion doping concentration of the layer 11 is 4e20cm-3～5e20cm-3Within the scope, including the endpoints.
Then, as shown in fig. 2d, wax printing is performed on the surface of the silicon wafer 1 to form a mask, and the mask covers the second doping layer 11 of the preset front electrode regions to expose the second doping layer 11 between the preset front electrode regions; after etching the second doped layer 11 exposed by the mask, the first doped layer 10 under the second doped layer 11 is exposed, and the second doped layer 11 in the region covered by the mask remains.
Then, as shown in fig. 2e, an antireflection film 12 is formed on the surface of the silicon wafer 1, and a front electrode 13 is formed on the surface of the antireflection film 12 in a predetermined front region corresponding to the second doped layer 11. Of course, an aluminum back field, a back electrode, and the like are formed on the back surface of the silicon wafer 1, which is not described herein again. Alternatively, the antireflection film in this embodiment is a silicon nitride film, but the present invention is not limited thereto.
According to the manufacturing method of the selective emitter structure provided by the embodiment of the invention, the second doping layer, namely the heavy doping layer, and the first doping layer, namely the light doping layer, are formed by two times of diffusion, so that the doping concentrations of the heavy doping layer and the light doping layer can be respectively controlled, the doping concentration of the light doping layer can be very low, the doping concentration of the heavy doping layer is very high, the doping concentration difference between the heavy doping layer and the light doping layer can be further increased, and the open-circuit voltage and the conversion efficiency of the solar cell can be improved. In addition, the manufacture of the selective emitter structure can be realized by adopting the original equipment for manufacturing the solar cell, so that the production cost is saved, and the production efficiency is improved.
The embodiment of the invention also provides a solar cell, wherein the selective emitter structure is manufactured by adopting the manufacturing method, as shown in fig. 3, the solar cell comprises a silicon wafer 1, the front surface of the silicon wafer 1 is provided with a first doping layer 10 and a second doping layer 11 positioned above the first doping layer 10, the second doping layer 11 exposes the first doping layer 10 between preset front surface electrode regions, and the doping concentration of the second doping layer 11 is greater than that of the first doping layer 10; and the front electrode 13 is positioned in the preset front electrode area and covers the front electrodes 13 of the second doped layers 11, and the front electrodes 13 do not cover the first doped layers 10 between the preset front electrode areas.
Wherein the doping concentration of the first doping layer 10 is 5e19cm-3～6e19cm-3The doping concentration of the second doped layer 11 is in the range of 4e, inclusive20cm-3～5e20cm-3Within the scope, including the endpoints.
Of course, the solar cell in this embodiment further includes:
an antireflection film 12 between the second doped layer 11 and the front surface electrode 13;
an aluminum back field 14 and a back electrode 15 on the back side of the silicon wafer 1.
In addition, in the embodiment of the present invention, an antireflection film is further provided on the back surface of the silicon wafer 1 and above the aluminum back surface field 14, which is not described herein again. The antireflection film may be a silicon nitride film, an aluminum oxide film, or the like.
According to the solar cell provided by the embodiment of the invention, the second doping layer, namely the heavy doping layer, and the first doping layer, namely the light doping layer, are formed by two times of diffusion, so that the doping concentrations of the heavy doping layer and the light doping layer can be respectively controlled, the doping concentration of the light doping layer is very low, the doping concentration of the heavy doping layer is very high, the doping concentration difference between the heavy doping layer and the light doping layer can be increased, and the open-circuit voltage and the conversion efficiency of the solar cell are improved. In addition, the manufacture of the selective emitter structure can be realized by adopting the original equipment for manufacturing the solar cell, so that the production cost is saved, and the production efficiency is improved.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (6)
1. A method for fabricating a selective emitter structure, comprising:
providing a pretreated silicon wafer;
performing first diffusion on the silicon wafer, forming a first doping layer on the front surface of the silicon wafer, wherein the doping concentration of the first doping layer is 5e19cm-3～6e19cm-3Within the scope, including the endpoints;
removing impurities on the surface of the silicon wafer, performing second diffusion on the silicon wafer, and forming a second doping layer above the first doping layer, wherein the doping concentration of the second doping layer is greater than that of the first doping layer, the depth of the second doping layer is smaller than that of the first doping layer, and the doping concentration of the second doping layer is 4e20cm-3～5e20cm-3Within the scope, including the endpoints;
reserving a second doping layer of the preset front electrode regions, and etching away the second doping layer between the preset front electrode regions to expose the first doping layer between the preset front electrode regions;
and forming a front electrode above the second doping layer of the preset front electrode area.
2. The method of claim 1, further comprising, prior to forming the front electrode:
and forming an antireflection film on the surface of the silicon wafer.
3. The method according to claim 1 or 2, wherein the step of leaving the second doped layer of the predetermined front electrode areas and etching away the second doped layer between the predetermined front electrode areas comprises:
forming a mask on the surface of the silicon wafer, wherein the mask covers the preset front electrode areas and exposes the areas between the preset front electrode areas;
and etching the second doping layer in the region exposed by the mask to expose the first doping layer below the second doping layer.
4. The method of claim 3, wherein the mask is formed on the surface of the silicon wafer by a wax printing process.
5. A solar cell, wherein the selective emitter structure is manufactured by the method for manufacturing a selective emitter structure according to any one of claims 1 to 4, the solar cell comprising:
the silicon wafer comprises a silicon wafer, wherein a first doping layer and a second doping layer located above the first doping layer are arranged on the front surface of the silicon wafer, the first doping layer between preset front surface electrode regions is exposed out of the second doping layer, the doping concentration of the second doping layer is greater than that of the first doping layer, the depth of the second doping layer is smaller than that of the first doping layer, and the doping concentration of the first doping layer is 5e19cm-3～6e19cm-3In the range of 4e, inclusive, of the doping concentration of the second doped layer20cm-3～5e20cm-3Within the scope, including the endpoints;
and the front electrode is positioned in the preset front electrode area and covers the front electrode of the second doped layer, and the front electrode does not cover the first doped layer between the preset front electrode areas.
6. The solar cell of claim 5, further comprising:
an antireflection film positioned between the second doping layer and the front electrode;
and the aluminum back surface field and the back surface electrode are positioned on the back surface of the silicon chip.
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| CN101916797A (en) * | 2010-07-14 | 2010-12-15 | 江苏林洋太阳能电池及应用工程技术研究中心有限公司 | Polysilicon selective emitter solar cell manufacture process |
| US8871620B2 (en) * | 2011-07-28 | 2014-10-28 | International Business Machines Corporation | III-V photovoltaic elements |
| CN102709342A (en) * | 2012-07-05 | 2012-10-03 | 合肥海润光伏科技有限公司 | Selective emitter structure of solar cell and preparation method thereof |
| CN102709350A (en) * | 2012-07-05 | 2012-10-03 | 合肥海润光伏科技有限公司 | Selective emitter structure of solar cell and preparation method thereof |
| CN103560170B (en) * | 2013-10-29 | 2016-07-06 | 太极能源科技（昆山）有限公司 | SE solaode and preparation method thereof |
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| CN107895751A (en) * | 2017-12-06 | 2018-04-10 | 浙江晶科能源有限公司 | A kind of preparation method of selective emitter |
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