CN108788432A - A kind of aviation IC10 single crystal super alloys welding method of the same race - Google Patents
A kind of aviation IC10 single crystal super alloys welding method of the same race Download PDFInfo
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- CN108788432A CN108788432A CN201810605307.2A CN201810605307A CN108788432A CN 108788432 A CN108788432 A CN 108788432A CN 201810605307 A CN201810605307 A CN 201810605307A CN 108788432 A CN108788432 A CN 108788432A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K15/00—Electron-beam welding or cutting
- B23K15/0006—Electron-beam welding or cutting specially adapted for particular articles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K15/00—Electron-beam welding or cutting
- B23K15/0026—Auxiliary equipment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K15/00—Electron-beam welding or cutting
- B23K15/0033—Preliminary treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K15/00—Electron-beam welding or cutting
- B23K15/0046—Welding
- B23K15/0086—Welding welding for purposes other than joining, e.g. built-up welding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K15/00—Electron-beam welding or cutting
- B23K15/06—Electron-beam welding or cutting within a vacuum chamber
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y10/00—Processes of additive manufacturing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y40/00—Auxiliary operations or equipment, e.g. for material handling
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- Manufacturing & Machinery (AREA)
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- Welding Or Cutting Using Electron Beams (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
The invention discloses a kind of aviation IC10 single crystal super alloys welding method of the same race, this method is capable of being reliably connected for the realization IC10 single crystal super alloys of the same race of flawless.This method includes that IC10 single crystal super alloys are built-in clamping fixed in vacuum welding chamber by treated, close vacuum welding chamber, it vacuumizes, and when vacuum welding chamber reaches required vacuum degree, wire feed is carried out to the interface of treated IC10 single crystal super alloys and increases material processing, completes single layer single track and increase material postcooling to take out；The increasing material layer for increasing the IC10 single crystal super alloys after material is handled again, and being fixed on the increasings material layer of treated IC10 single crystal super alloys and the interface tight fit for not increasing material and the IC10 single crystal super alloys of processing in the clamping of vacuum welding chamber；Vacuum welding chamber is closed, is vacuumized, processing is docked with the interface for the IC10 single crystal super alloys for not increasing material and processing progress electron beam to the increasings material layer of treated IC10 single crystal super alloys when meeting vacuum degree, completes the welding of IC10 single-chips of the same race.
Description
Technical field
The present invention relates to single crystal super alloy welding technology field, more particularly to a kind of aviation IC10 monocrystalline high temperature of the same race closes
Golden welding method.
Background technology
IC10 alloys are typical Ni3Al based single-crystal high-temperature alloys, and navigate in a new generation as turborotor material
It is widely applied on empty engine.Engine rotor blade and wheel disc can be formed one using blisk manufacturing technology
Body saves wedge head and locking device in tradition connection, reduces construction weight and number of parts, avoid tenon windage loss, carry
High pneumatic efficiency.At present there are two types of country's single crystal super alloy guide vane preparation methods：One using the orientation in casting method
Solidification prepares single crystal blade, and two carry out superalloy powder or silk material increasing material manufacturing monocrystalline leaf using high energy beam current welding equipment
Piece, but always will produce liquefaction or solidification cracking when single crystal blade is welded, either the reparation of single crystal blade still
Connection, encounters prodigious difficulty.
Currently, the connection main method about IC10 single crystal blades is still soldering, it is known that method for welding economy is simple, can
The crack problem caused by base material fusing, crystallization is avoided, but the component difference of postwelding connector and base material is larger, Er Qiejie
It is also easy to produce low-melting compound in head, weakens the performance of connector, so being difficult to make monocrystalline when being attached using brazing mode
Blade reaches the time and intensity needed for being on active service.
Invention content
The object of the present invention is to provide a kind of aviation IC10 single crystal super alloys welding method of the same race, this method can be without splitting
The realization IC10 single crystal super alloys of the same race of line are reliably connected.
To achieve the above object, the present invention provides following schemes：
A kind of aviation IC10 single crystal super alloys welding method of the same race, the welding method include：
First time processing is carried out to the interface of IC10 single crystal super alloys, and IC10 monocrystalline is high by treated for the first time
It is built-in clamping fixed that temperature alloy is placed on vacuum welding chamber；
It closes the vacuum welding chamber and vacuumizes, when the vacuum welding chamber reaches required vacuum degree, pass through
Electron beam wire feed system is carried out at the same time wire feed to the interface of treated first time IC10 single crystal super alloys and increases material
Processing completes single layer single track and increases the taking-up of material postcooling, increases the IC10 single crystal super alloys after material；The material for increasing material is CH4169；
Second of processing of increasing material layer progress to the IC10 single crystal super alloys after the increasing material, and will be after second of processing
IC10 single crystal super alloys increasing material layer and do not increase material and by for the first time processing IC10 single crystal super alloys interface
Tight fit is fixed in the clamping of the vacuum welding chamber；
It is again switched off the vacuum welding chamber and vacuumizes, when the vacuum welding chamber reaches required vacuum degree,
Increasings material layer to described second treated IC10 single crystal super alloys and material is not increased and the IC10 by handling for the first time is mono-
The interface of brilliant high temperature alloy carries out electron beam docking processing.
Optionally, the interface to IC10 single crystal super alloys carries out first time processing, specifically includes：
Polishing processing is carried out to the interface of IC10 single crystal super alloys；
Decontamination processing is carried out to the interface of polishing treated IC10 single crystal super alloys.
Optionally, the interface of described pair of polishing treated IC10 single crystal super alloy carries out decontamination processing, specific to wrap
It includes：
Petroleum ether is selected to carry out oil removal treatment to the interface of polishing treated IC10 single crystal super alloys；
The interface of IC10 single crystal super alloys after oil removal treatment is cleaned using alcohol.
Optionally, described to close after the vacuum welding chamber vacuum degree required when vacuumizing and be again switched off described true
Required vacuum degree is 1 × 10 when being vacuumized behind empty welding booth-3MPa。
Optionally, the technological parameter of the wire feed and increasing material is：Accelerating potential 60KV, welding current 8mA, focus current
503A, speed of welding 600mm/min, wire feed rate 20mm/s.
Optionally, the time of the cooling is 20min.
Optionally, the increasing material layer to the IC10 single crystal super alloys after the increasing material carries out second of processing, specifically
Including：
Milling machine milling processing is carried out to the increasing material layer of the IC10 single crystal super alloys after the increasing material, ensures the thickness for increasing material layer
The consistency of thickness of degree and IC10 single crystal super alloys；
Decontamination processing is carried out to the increasing material layer of milling machine milling treated IC10 single crystal super alloys.
Optionally, the decontamination processing is to be carried out in -1 hour 15 minutes before welding.
Optionally, material is not being increased to the increasing material layers of described second treated IC10 single crystal super alloys and and by the
Before the interface of the IC10 single crystal super alloys of single treatment carries out electron beam docking processing, the welding method further includes：
Increasings material layer to described second treated IC10 single crystal super alloys and material is not increased and the IC10 by handling for the first time is mono-
The interface of brilliant high temperature alloy carries out positioning welding processing.
Optionally, the technological parameter of the electron beam welding is：Accelerating potential 60KV, welding current 18mA, focus current
503mA, speed of welding 1600mm/min.
According to specific embodiment provided by the invention, the invention discloses following technique effects：
The present invention provides a kind of aviation IC10 single crystal super alloys welding method of the same race, this method includes to IC10 monocrystalline
The interface of high temperature alloy carries out first time processing, and IC10 single crystal super alloys are placed on vacuum welding by treated for the first time
Indoor clamping is connect to fix；It closes the vacuum welding chamber and vacuumizes, wait for that the vacuum welding chamber reaches required vacuum degree
When, wire feed is carried out at the same time to the interface of treated first time IC10 single crystal super alloys and increases material processing, is completed single
Layer single track increases material postcooling and takes out the IC10 single crystal super alloys after increasing material；The material for increasing material is CH4169；After the increasing material
The increasing material layers of IC10 single crystal super alloys carry out second and handle, and by second treated IC10 single crystal super alloys
It is described true to increase being fixed on for the interface tight fit of IC10 single crystal super alloy of the material layer with material is not increased and by first time processing
In the clamping of empty welding booth；It is again switched off the vacuum welding chamber and vacuumizes, wait for required by the vacuum welding chamber reaches
When vacuum degree, increasing material layer to described second treated IC10 single crystal super alloys and material is not increased and by handling for the first time
IC10 single crystal super alloys interface carry out electron beam docking processing.Therefore, using welding method energy provided by the invention
The realization IC10 single crystal super alloys of the same race of enough flawlesses are reliably connected.
Description of the drawings
It in order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the present invention
Example, for those of ordinary skill in the art, without having to pay creative labor, can also be according to these attached drawings
Obtain other attached drawings.
Fig. 1 is the flow diagram of aviation of embodiment of the present invention IC10 single crystal super alloys welding method of the same race；
Fig. 2 is the weld seam macro morphology schematic diagram that conventional method is used under the different speeds of welding of the present invention；
Fig. 3 is the schematic diagram of the x-ray inspection pattern using conventional method under the different speeds of welding of the present invention；
Fig. 4 is that IC10 single crystal super alloys of the present invention increase the macro morphology schematic diagram after material；
Fig. 5 is the macro morphology schematic diagram after the IC10 single crystal super alloys docking after the present invention increases material；
Fig. 6 is the x-ray inspection pattern schematic diagram after the IC10 single crystal super alloys docking after the present invention increases material.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The object of the present invention is to provide a kind of aviation IC10 single crystal super alloys welding method of the same race, this method can be without splitting
The realization IC10 single crystal super alloys of the same race of line are reliably connected.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is described in further detail.
The technological process of aviation IC10 single crystal super alloys welding method of the same race provided by the invention is：IC10 monocrystalline high temperature
Alloy pre-welding treatment → IC10 single crystal super alloy clampings fix → welding booth vacuumizes → fill silk complete single layer single track increase material →
Taking out postwelding workpiece → milling machine processing postwelding workpiece welding surface →, fixing band to the workpiece pre-welding treatment after milling → clamping increases material
The IC10 single crystal super alloys and common IC10 single crystal super alloys → welding booth of layer vacuumize → and spot welding fixes → and electron beam is complete
The process route welded at whole section.
Fig. 1 is the flow diagram of aviation of embodiment of the present invention IC10 single crystal super alloys welding method of the same race, such as Fig. 1 institutes
Show, aviation IC10 single crystal super alloys welding method of the same race provided in an embodiment of the present invention specifically includes following steps.
Step 101：First time processing is carried out to the interface of IC10 single crystal super alloys, and by treated for the first time
It is built-in clamping fixed that IC10 single crystal super alloys are placed on vacuum welding chamber.
Step 102：It closes the vacuum welding chamber and vacuumizes, wait for that the vacuum welding chamber reaches required vacuum degree
When, by electron beam wire feed system, the interface of treated first time IC10 single crystal super alloys is carried out at the same time and is sent
Silk increases material postcooling and takes out the IC10 single crystal super alloys after increasing material with material processing, completion single layer single track is increased；Increase material material be
CH4169。
Step 103：Second is carried out to the increasing material layer of the IC10 single crystal super alloys after the increasing material to handle, and by second
The increasing material layer of secondary treated IC10 single crystal super alloys and do not increase material and by the IC10 single crystal super alloys of processing for the first time
Interface tight fit be fixed in the clamping of the vacuum welding chamber.
Step 104：It is again switched off the vacuum welding chamber and vacuumizes, wait for true required by the vacuum welding chamber reaches
When reciprocal of duty cycle, increasings material layer to described second treated IC10 single crystal super alloys and material is not increased and by handling for the first time
The interface of IC10 single crystal super alloys carries out electron beam docking processing.
Step 101 specifically includes：
Polishing processing is carried out to the interface of IC10 single crystal super alloys, surface roughness stops when being Ra1.5-3 μm.
The interface of polishing treated IC10 single crystal super alloys is subjected to decontamination processing, when decontamination processing selects first
Petroleum ether oil removing is then cleaned using alcohol, which needs to carry out in -1 hour 15 minutes before welding.
Will treated that IC10 single crystal super alloys are built-in clamping fixed in vacuum welding chamber, treated IC10 monocrystalline high temperature
The interface of alloy is merged using close-fitting keeps that treated that IC10 single crystal super alloys are disposed vertically.
Step 102 specifically includes：
It closes vacuum welding chamber and vacuumizes, it is 1 × 10 to wait for that the vacuum welding chamber reaches vacuum degree-3When MPa, first locating
The interface of IC10 single crystal super alloys after reason positions, and is then carried out at the same time wire feed and increases material processing, completes single layer single track and increase
Material.Wherein, the technological parameter of wire feed and increasing material is：Accelerating potential 60KV, welding current 8mA, focus current 503A, speed of welding
600mm/min, wire feed rate 20mm/s.
Increase the IC10 single crystal super alloys after material to take out after vacuum welding chamber cools down 20min.
Step 103 specifically includes：
Milling machine milling processing is carried out to the increasing material layer of the IC10 single crystal super alloys after increasing material so that increasing material layer becomes flat
It is whole, and ensure to increase the consistency of thickness of the thickness and IC10 single crystal super alloys of material layer.
Decontamination processing carried out again to the increasing material layer of milling treated IC10 single crystal super alloys, when decontamination processing first
Petroleum ether oil removing is selected, is then cleaned using alcohol, which need to carry out before weldering in -1 hour 15 minutes.
By the IC10 single crystal super alloys after decontamination processing in vacuum welding chamber built-in clamping fixed, the IC10 after decontamination processing
The increasing material layer of single crystal super alloy uses tightly with the interface for not increasing material and the IC10 single crystal super alloys by handling for the first time
Keep two blocks of high temperature alloys horizontal positioned with merging.
Step 104 specifically includes：
It is again switched off vacuum welding chamber and vacuumizes, it is 1 × 10 to wait for that the vacuum welding chamber reaches vacuum degree-3When MPa, first
In the interface of the increasing material layer and the IC10 single crystal super alloys for not increasing material and process first time processing of IC10 single crystal super alloys
Carry out positioning welding.
Electron beam welding is proceeded by after positioning welding, electron beam welding uses single cycle welding manner, electron beam welding
Technological parameter is：Accelerating potential 60KV, welding current 18mA, focus current 503mA, speed of welding 1600mm/min.
Be capable of the realization IC10 single crystal super alloys of the same race of flawless in order to illustrate welding method provided by the invention can
By connection, now conventional method is used to carry out contrast verification with method provided by the invention.
Optimal heat input parameter welding current=18mA, accelerating potential=60KV, focus current=503mA are selected, is changed
Speed of welding (V=1600mm/min, 1800mm/min, 2000mm/min).The side of unitary variant is used during this experiment
Method only changes speed of welding and observes the influence for changing speed of welding to weld seam macro morphology.
The speed of welding of Fig. 2 (a) is 1600mm/min, and the speed of welding of Fig. 2 (b) is 1800mm/min, the weldering of Fig. 2 (c)
It is 2000mm/min to connect speed；As shown in Fig. 2, it can be seen from Fig. 2 (a) when welding speed V is 1600mm/min, weld seam
Front forming, which exists, slightly stays defect, as to stay defect retarded for the increase of speed of welding, but just by Fig. 2 (c) weld seams
The position of upper thread collimation mark note is it will be clear that the forming of weld seam end is poor.It analyzes its reason to think, when speed of welding increases
When to 2000mm/min, total thermal weld stress reduces, and receives the uneven fusing of sector metal, to generate pattern spy
Sign.Fig. 2 (a) to Fig. 2 (c) can be seen that by back of weld pattern does not generate larger splatter in welding process, and
It can also show that the increase with speed of welding, xenogenesis high temperature alloy butt weld back penetration amount are also in from back of weld pattern
Decline trend.
Further to detect IC10 single crystal super alloys welding point of the same race with the presence or absence of the crack defect in traditional welding,
X-ray detection is now carried out to it, and (x-ray inspection parameter is：100Kv-10mA-120S), the results are shown in Figure 3 for X-ray detection,
Detection finds IC10 single crystal super alloys welding point of the same race, and there are apparent transversal crack defects, when speed of welding is
Not only there is crack defect and has also appeared incomplete fusion hole defect in weld seam stage casing when 1800mm/min, although when speed of welding increases
Still there is transversal crack appearance when adding to 2000mm/min, but this it appears that transversal crack number is reduced from Fig. 3 (c),
And it concentrates on segmental arc and has received segmental arc.
Transversal crack can not be eliminated due to changing technological parameter, and by many experiments it is found that using electron-bombardment welding
When connecing the common nickel base superalloy of method connection with IC10 single crystal super alloys, equal flawless generates.Therefore, the present invention is using true
The method of empty electron beam increasing material manufacturing increases material technique in IC10 single crystal super alloys side using single layer single track, mono- in IC10 of the same race
Brilliant high temperature alloy interface increases material GH4169, and macro morphology is as shown in Figure 4.
Fig. 5 is the macro morphology schematic diagram after the IC10 single crystal super alloys docking after the present invention increases material, as shown in figure 5,
Its front forming is good, back just penetration 1mm, and x-ray inspection analysis is carried out such as to IC10 single crystal super alloys shown in fig. 5
Shown in Fig. 6, it can be seen that either front ray scanning or the equal flawless of back side ray scanning illustrate to use electron beam welding
Side, which increases material GH4169, can solve the problems, such as IC10 single crystal super alloys plank weld crack of the same race.
Each embodiment is described by the way of progressive in this specification, the highlights of each of the examples are with other
The difference of embodiment, just to refer each other for identical similar portion between each embodiment.
Principle and implementation of the present invention are described for specific case used herein, and above example is said
The bright method and its core concept for being merely used to help understand the present invention；Meanwhile for those of ordinary skill in the art, foundation
The thought of the present invention, there will be changes in the specific implementation manner and application range.In conclusion the content of the present specification is not
It is interpreted as limitation of the present invention.
Claims (10)
1. a kind of aviation IC10 single crystal super alloys welding method of the same race, which is characterized in that the welding method includes：
First time processing is carried out to the interface of IC10 single crystal super alloys, and IC10 monocrystalline high temperature closes by treated for the first time
It is built-in clamping fixed that gold is placed on vacuum welding chamber；
It closes the vacuum welding chamber and vacuumizes, when the vacuum welding chamber reaches required vacuum degree, pass through electronics
Beam wire feed system is carried out at the same time wire feed and increases at material to the interface of treated first time IC10 single crystal super alloys
Reason, after completing single layer single track increasing material, the cooling IC10 single crystal super alloys taken out after increasing material；The material for increasing material is CH4169；
Second is carried out to the increasing material layer of the IC10 single crystal super alloys after the increasing material to handle, and will second treated
The increasing material layer of IC10 single crystal super alloys and the interface for not increasing material and the IC10 single crystal super alloys by handling for the first time are tight
Cooperation is fixed in the clamping of the vacuum welding chamber；The thickness for increasing material layer is 0.1~1mm；
It is again switched off the vacuum welding chamber and vacuumizes, when the vacuum welding chamber reaches required vacuum degree, to institute
It states second treated the increasings material layer of IC10 single crystal super alloys and do not increase material and the IC10 monocrystalline height by processing for the first time
The interface of temperature alloy carries out electron beam docking processing.
2. welding method according to claim 1, which is characterized in that the interface to IC10 single crystal super alloys into
Row is handled for the first time, is specifically included：
Polishing processing is carried out to the interface of IC10 single crystal super alloys；
Decontamination processing is carried out to the interface of polishing treated IC10 single crystal super alloys.
3. welding method according to claim 2, which is characterized in that described pair of polishing treated IC10 monocrystalline high temperature closes
The interface of gold carries out decontamination processing, specifically includes：
Petroleum ether is selected to carry out oil removal treatment to the interface of polishing treated IC10 single crystal super alloys；
The interface of IC10 single crystal super alloys after oil removal treatment is cleaned using alcohol.
4. welding method according to claim 1, which is characterized in that when being vacuumized after the closing vacuum welding chamber
Required vacuum degree and to be again switched off vacuum degree required when vacuumizing after the vacuum welding chamber be 1 × 10-3MPa。
5. welding method according to claim 1, which is characterized in that the wire feed and increase material technological parameter be：Accelerate
Voltage 60KV, welding current 8mA, focus current 503A, speed of welding 600mm/min, wire feed rate 20mm/s.
6. welding method according to claim 1, which is characterized in that the time of the cooling is 20min.
7. welding method according to claim 1, which is characterized in that the IC10 monocrystalline high temperature to after the increasing material closes
The increasing material layer of gold carries out second and handles, and specifically includes：
To it is described increasing material after IC10 single crystal super alloys increasing material layer carry out milling machine milling processing, ensure increase material layer thickness with
The consistency of thickness of IC10 single crystal super alloys；
Decontamination processing is carried out to the increasing material layer of milling machine milling treated IC10 single crystal super alloys.
8. according to the welding method described in claim 2 or 7, which is characterized in that the decontamination processing is 15 points before welding
Clock carries out in -1 hour.
9. welding method according to claim 1, which is characterized in that treated that IC10 monocrystalline is high to described second
The increasing material layer of temperature alloy and the interface progress electron beam pair for not increasing material and the IC10 single crystal super alloys by handling for the first time
Before connecing processing, the welding method further includes：To the increasing material layers of described second treated IC10 single crystal super alloys with
Do not increase material and carries out positioning welding processing by the interface of the IC10 single crystal super alloys of processing for the first time.
10. welding method according to claim 1, which is characterized in that the technological parameter of the electron beam welding is：Accelerate
Voltage 60KV, welding current 18mA, focus current 503mA, speed of welding 1600mm/min.
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| CN109702311A (en) * | 2019-03-06 | 2019-05-03 | 南昌航空大学 | A kind of electron beam fuse restorative procedure of single crystal super alloy |
| CN109822192A (en) * | 2019-03-06 | 2019-05-31 | 南昌航空大学 | A kind of preparation method of single crystal super alloy monocrystalline middle layer |
| CN111828099A (en) * | 2020-06-30 | 2020-10-27 | 中国航发南方工业有限公司 | Adjustable turbine guide and forming method |
| CN112719555A (en) * | 2020-12-22 | 2021-04-30 | 兰州长征机械有限公司 | Electron beam welding method for nickel-based alloy tube box of air cooler |
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| CN109702311A (en) * | 2019-03-06 | 2019-05-03 | 南昌航空大学 | A kind of electron beam fuse restorative procedure of single crystal super alloy |
| CN109822192A (en) * | 2019-03-06 | 2019-05-31 | 南昌航空大学 | A kind of preparation method of single crystal super alloy monocrystalline middle layer |
| CN109822192B (en) * | 2019-03-06 | 2023-10-03 | 南昌航空大学 | Preparation method of single crystal intermediate layer of single crystal superalloy |
| CN111828099A (en) * | 2020-06-30 | 2020-10-27 | 中国航发南方工业有限公司 | Adjustable turbine guide and forming method |
| CN111828099B (en) * | 2020-06-30 | 2022-06-07 | 中国航发南方工业有限公司 | Adjustable turbine guide and forming method |
| CN112719555A (en) * | 2020-12-22 | 2021-04-30 | 兰州长征机械有限公司 | Electron beam welding method for nickel-based alloy tube box of air cooler |
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Inventor after: Wang Shanlin Inventor after: Zhang Ziyang Inventor after: Xin Ji Jun Inventor after: Chen Yuhua Inventor after: Huang Yongde Inventor after: Ke Liming Inventor after: Geng Zhijie Inventor before: Wang Shanlin Inventor before: Zhang Ziyang Inventor before: Chen Yuhua Inventor before: Huang Yongde Inventor before: Ke Liming Inventor before: Geng Zhijie |