CN108596160A - Ultrasonic wave identification circuit and fingerprint identification sensor - Google Patents
Ultrasonic wave identification circuit and fingerprint identification sensor Download PDFInfo
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- CN108596160A CN108596160A CN201810645441.5A CN201810645441A CN108596160A CN 108596160 A CN108596160 A CN 108596160A CN 201810645441 A CN201810645441 A CN 201810645441A CN 108596160 A CN108596160 A CN 108596160A
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- 230000000694 effects Effects 0.000 claims abstract description 15
- 239000013589 supplement Substances 0.000 claims description 41
- 239000013078 crystal Substances 0.000 claims description 15
- 230000005611 electricity Effects 0.000 claims description 15
- 230000002459 sustained effect Effects 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000008054 signal transmission Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000006641 stabilisation Effects 0.000 claims description 3
- 238000011105 stabilization Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims description 2
- 230000010355 oscillation Effects 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 101100537098 Mus musculus Alyref gene Proteins 0.000 description 5
- 101150095908 apex1 gene Proteins 0.000 description 5
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- 230000008569 process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000002457 bidirectional effect Effects 0.000 description 2
- 230000009514 concussion Effects 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
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Abstract
The present invention relates to ultrasonic fingerprint identification technology field more particularly to a kind of ultrasonic wave identification circuits and fingerprint Identification sensor.The ultrasonic wave identification circuit includes receiver Rx, three TFT transistors M1, M3 and M4, the receiver Rx has piezoelectric effect, the first end of the receiver Rx and external control circuit are electrically connected, the second end of the receiver Rx is simultaneously and the grid of TFT transistors M4, the first end of TFT transistors M1 is electrically connected, the grid of the TFT transistors M1, second end is all electrically connected with external control circuit, the first end and external power supply Vcc of the TFT transistors M4 is electrically connected, the second end of the TFT transistors M4 and the first end of TFT transistors M3 are electrically connected, the grid of the TFT transistors M3 and external control circuit are electrically connected, the second end acquisition module of the TFT transistors M3 is electrically connected.Fingerprint Identification sensor uses above-mentioned ultrasonic wave identification circuit.
Description
【Technical field】
The present invention relates to ultrasonic fingerprint identification technology field more particularly to a kind of ultrasonic wave identification circuit and fingerprint recognitions
Sensor.
【Background technology】
Living things feature recognition is the technology for distinguishing different biological features, including fingerprint, palmmprint, face, DNA, sound
Etc. identification technologies.Fingerprint refers to the lines of the convex injustice of the positive surface skin fovea superior of finger tips of people, the regular arrangement form of lines
Different line types.Fingerprint recognition refers to carries out identity authentication by comparing the details of different fingerprints.It is lifelong due to having
The application of invariance, uniqueness and convenience, fingerprint recognition is more and more extensive.Since ultrasonic wave is good for fingerprint recognition effect,
More and more producers are dedicated to studying ultrasonic fingerprint sensor.And the ultrasonic wave of existing ultrasonic fingerprint identification sensor
Identification circuit is complicated, not easy to manufacture.
Therefore, how a kind of ultrasonic wave identification circuit simple in structure is provided, is just led at ultrasonic fingerprint identification technology
The demand in domain！
【Invention content】
For the technical problem for overcoming the ultrasonic wave identification circuit of existing ultrasonic fingerprint identification sensor complicated, sheet
Invention provides a kind of ultrasonic wave identification circuit and fingerprint Identification sensor.
The scheme that the present invention solves technical problem is to provide a kind of ultrasonic wave identification circuit, is used to receive external control
The control of circuit generates ultrasonic wave and receives the ultrasonic wave of reflection to generate electric signal transmission to acquisition module, which knows
Other circuit includes receiver Rx, and three TFT transistors M1, M3 and M4, the receiver Rx is with piezoelectric effect, the receiver
The first end of Rx and external control circuit are electrically connected, and the second end of the receiver Rx is simultaneously and the grid of TFT transistors M4
Pole, TFT transistors M1 first end be electrically connected, the grid of the TFT transistors M1, second end all with external control circuit
It is electrically connected, the first end and external power supply Vcc of the TFT transistors M4 are electrically connected, the second end of the TFT transistors M4
It being electrically connected with the first end of TFT transistors M3, the grid of the TFT transistors M3 and external control circuit are electrically connected,
The second end of the TFT transistors M3 is electrically connected with acquisition module.
Preferably, the ultrasonic wave identification circuit further includes the first end and TFT crystalline substances of TFT transistors M2, TFT transistor M2
The second end of body pipe M3 is electrically connected, and grid, second end and the control circuit of outside of the TFT transistors M2 are electrically connected.
Preferably, the ultrasonic wave identification circuit further includes TFT transistors M5, the second end of the TFT transistors M3 and
The first end of TFT transistors M5 is electrically connected, and the grid of the TFT transistors M5 and external control circuit are electrically connected, institute
The second end and acquisition module for stating TFT transistors M5 are electrically connected.
Preferably, the acquisition module is silicon substrate processing chip.
It is preferably supplement energy circuit with the control circuit of the outside of the drain electrode connection of the TFT transistors M1, it is described
It supplements energy circuit and stable voltage and or current is provided.
Preferably, the control circuit of the outside provides receiver reset level to the grid of TFT transistors M1, described
The source electrode and drain electrode of TFT transistors M1 electrically conducts, voltage and the supplement energy circuit offer of the receiver Rx second ends
Voltage is equal, and the control circuit of the outside provides of short duration pulse signal to the first end of the receiver Rx later, described
Receiver RX generates ultrasonic signal and launches, and the control circuit of the outside is carried to the grid of TFT transistors M1 later
For gate voltage level, ultrasonic wave is returned by blocking reflected, and the receiver Rx receives ultrasonic oscillation and generates oscillator signal, institute
When stating oscillator signal voltage and being lower, the supplement energy circuit supplements energy by TFT transistors M1 to the second end of receiver Rx
Amount, the second terminal voltage of receiver Rx are got higher, and the electric signal of external power supply Vcc is made to pass through drain electrode and the source electrode of TFT transistors M4
Electric current and/or voltage become larger, external control circuit provides high level, the TFT transistors for the grid of TFT transistors M3
The source electrode and drain electrode of M3 is connected, and the electric signal of Vcc is sensed by TFT transistor M4 and M3 to acquisition module, the reception
The voltage of device reset level is more than the voltage of gate voltage level.
Preferably, it is external when the control circuit of the outside provides receiver reset level to the grid of TFT transistors M1
Control circuit is suitable to the source electrode offer size of TFT transistors M2, and the sustained voltage of whole cycle size, external control
Circuit processed provides an of short duration high level to the grid of TFT transistors M2, and external supplement energy circuit gives TFT transistors always
The second end of M1 provides the sustained voltage of whole cycle size, and external power supply Vcc persistently gives the first end of TFT transistors M4
The sustained electric current of whole cycle size and/or voltage are provided, external control circuit is provided to the grid of TFT transistors M1
Level is low level, and external control circuit is to the voltage that the voltage Tx that receiver Rx first ends provide is stabilization, external control
The level that circuit is provided to the grid of TFT transistors M3 is low level.
Preferably, the voltage of the electrical node between the source electrode to TFT transistors M3 and the drain electrode of TFT transistors M5 carries out
It resets, so that the voltage Vpe of the second end of receiver Rx is resetted, so that voltage Vpe is equal to the voltage that external control circuit provides, later
Receiver Rx is set to generate piezoelectric effect to emit ultrasonic wave, TFT transistors M1 is to receive ultrasonic wave to prepare later, external benefit
It fills the voltage that energy circuit is provided to the second end of TFT transistors M1 to increase, the voltage after raising is more than the door of TFT transistors M1
Voltage limit, external control circuit provide gate voltage level to the grid of TFT transistors M1, and TFT transistors M1 is allowed to be in critical
Conducting state, supplement energy circuit external at this time supplement energy, reception by TFT transistors M1 to the second end of receiver Rx
The voltage Vpe of device Rx second ends gradually rises, and the voltage Vpe of Rx second ends is increased to certain voltage and tends towards stability, Zhi Houchao
Sound wave is encountered object return and is received by receiver Rx, and due to piezoelectric effect, the voltage at the both ends receiver Rx changes generation
Oscillator signal, external supplement energy circuit supplement energy, receiver Rx by TFT transistors M1 to the second end of receiver Rx
The second terminal voltage Vpe gradually rise, make what the source electrode and drain electrode of the TFT transistors M4 was connected to be more and more obvious, external electrical
The electric current and/or voltage of source Vcc can also be become larger by the drain electrode and source electrode of TFT transistors M4, and receiver Rx is no longer received
Second terminal voltage Vpe of the ultrasonic wave of reflection, receiver Rx tends towards stability, and external control circuit is TFT transistors M3 later
Grid high level is provided, the source electrode and drain electrode conducting of the TFT transistors M3, the electric signal of Vcc by TFT transistors M4 and
M3 is sensed to acquisition module.
The present invention also provides a kind of fingerprint Identification sensor, which uses above-mentioned ultrasonic wave identification
Circuit.
Preferably, the ultrasonic wave identification circuit includes multiple, multiple ultrasonic wave identification circuit array settings.
Compared with prior art, ultrasonic wave identification circuit of the invention includes receiver Rx, three TFT transistors M1, M3
And there is piezoelectric effect, the first end of the receiver Rx and external control circuit to be electrically connected by M4, the receiver Rx, institute
It states the second end of receiver Rx to be electrically connected with the first end of the grid of TFT transistors M4, TFT transistors M1 simultaneously, the TFT
The grid of transistor M1, second end are all electrically connected with external control circuit, the first end of the TFT transistors M4 and outside
Power Vcc is electrically connected, and the second end of the TFT transistors M4 and the first end of TFT transistors M3 are electrically connected, the TFT
The grid of transistor M3 and external control circuit are electrically connected, and the second end acquisition module of the TFT transistors M3 electrically connects
Connect, do not have to using diode with TFT coupled in parallel, simple in structure, manufacture craft good compatibility is simple for process, easy
It makes, and external control circuit can supplement energy by TFT transistors M1 to receiver Rx, reduce external control circuit
To the pulse voltage that the first end of receiver Rx provides, the energy of receiver Rx transmitting ultrasonic waves is without excessive.
Compared with prior art, fingerprint Identification sensor of the invention uses above-mentioned ultrasonic wave identification circuit, no
With use diode with TFT coupled in parallel, simple in structure, manufacture craft good compatibility is simple for process, be easy make, and
External control circuit can supplement energy by TFT transistors M1 to receiver Rx, reduce external control circuit to reception
The pulse voltage that the first end of device Rx provides, the energy of receiver Rx transmitting ultrasonic waves is without excessive.
The ultrasonic wave identification circuit of the present invention includes multiple, and the ultrasonic wave identification circuit array setting, fingerprint recognition passes
Sensor is simple in structure, it is easy to which detection receives the position of the circuit of ultrasonic wave, and detection is accurate.
【Description of the drawings】
Fig. 1 is the particular circuit configurations schematic diagram of ultrasonic wave identification circuit of the present invention.
Fig. 2 is the time diagram of varying input signal in ultrasonic wave identification circuit of the present invention.
Fig. 3 is the time diagram of another varying input signal in ultrasonic wave identification circuit of the present invention.
Reference sign：10, ultrasonic wave identification circuit；11, acquisition module.
【Specific implementation mode】
In order to make the purpose of the present invention, technical solution and advantage be more clearly understood, below in conjunction with attached drawing and embodiment,
The present invention will be described in further detail.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention,
It is not intended to limit the present invention.
Referring to Fig. 1, the present invention provides a kind of ultrasonic wave identification circuit 10, it is used to receive the control of external control circuit
System generates ultrasonic wave and receives the ultrasonic wave of reflection to generate electric signal transmission to external acquisition module 11.
The ultrasonic wave identification circuit 10 include receiver Rx, TFT transistor M1, TFT transistor M2, TFT transistor M3,
TFT transistor M4 and TFT transistors M5.
There is the receiver Rx piezoelectric effect, receiver Rx to have a first end and a second end.The first of receiver Rx
When end and second end are applied in electric field, receiver Rx can be deformed, such as one end of receiver Rx applies burning voltage, and the other end is applied
Add pulse voltage, then continuous shaking and generates ultrasonic wave in the receiver Rx short time.If receiver Rx is deformed by power, connect
The both ends for receiving device Rx will produce positive and negative opposite charge, such as receiver Rx receives ultrasonic wave, then the first end of receiver Rx
Pulse charge is will produce with second end.The first end of receiver Rx and external control circuit are electrically connected, external control electricity
Road can provide pulse voltage so that receiver Rx generates ultrasonic wave to the first end of receiver Rx.The second end of receiver Rx is simultaneously
It is electrically connected with the grid of TFT transistors M4, the source electrode of TFT transistors M1.The node voltage of the second end of receiver Rx marks
For Vpe.It is appreciated that first end, the second end of each element of the present invention, merely to better illustrating each element
The electric connection pin of connection relation does not limit which specific end of original paper as first end, which end is second end.
TFT transistors are thin film transistor (TFT).The grid of TFT transistors M1, drain electrode all electrically connect with external control circuit
It connects.External control circuit provides high level or low level to the grid of TFT transistors M1, to control the source of TFT transistors M1
The break-make of pole and drain electrode, the level flag that external control circuit is provided to the grid of TFT transistors M1 are Gdbias.External
The level flag that control circuit is provided to the drain electrode of TFT transistors M1 is Dbias.It is enough in the grid pressure difference to TFT transistors M1
It is fully between the source electrode and drain electrode of TFT transistors M1 when big, i.e. the source electrode and drain electrode bidirectional conduction of TFT transistors M1.It is excellent
Selection of land, external control circuit provide receiver reset level, gate voltage level and low level to the grid of TFT transistors M1,
Wherein, receiver reset level is more than gate voltage level, and gate voltage level is more than low level.Drain electrode with TFT transistors M1 connects
The control circuit of the outside connect is supplement energy circuit, and the supplement energy circuit provides stable voltage and or current.
When the level of the grid of TFT transistors M1 is receiver reset level, the source electrode and drain electrode bidirectional conduction of TFT transistors M1 makes
The drain voltage of TFT transistors M1 is approximately equal to the voltage Vpe of receiver Rx second ends, i.e. the voltage Vpe of receiver Rx second ends
It is approximately equal to Dbias and (in the present invention, ignores influence and the theoretical value deviation of TFT transistor natures, it is believed that receiver Rx second
The voltage Vpe at end is equal to Dbias), receiver reset level is preferably 9~16V, preferably 10V, 12V or 15V.In TFT crystal
When the level of the grid of pipe M1 is gate voltage level, the source electrode and drain electrode of TFT transistors M1 is in critical conduction mode, if voltage
When less than gate voltage level, then the source electrode and drain electrode of TFT transistors M1 disconnects, i.e., the voltage of gate voltage level is equal to TFT crystal
The threshold voltage of pipe M1.When the level of the grid of TFT transistors M1 is low level, at the source electrode and drain electrode of TFT transistors M1
In off-state.
The drain electrode of TFT transistors M4 and external power supply Vcc are electrically connected, the source electrode and TFT crystal of the TFT transistors M4
The drain electrode of pipe M3 is electrically connected.
The grid of TFT transistors M3 and external control circuit are electrically connected, the source electrode of the TFT transistors M3 simultaneously and
The drain electrode of TFT transistors M2, the drain electrode of TFT transistors M5 are electrically connected.Grid of the external control circuit to TFT transistors M3
High level or low level are provided, to control the break-make of TFT transistor M3 source electrode and drain electrodes.The level mark of TFT transistor M3 grids
It is denoted as ROW.
Grid, source electrode and the control circuit of outside of TFT transistors M2 is electrically connected.External control circuit gives TFT crystalline substances
The grid of body pipe M2 provides high level or low level, to control the break-make of TFT transistor M2 source electrode and drain electrodes.External control electricity
Road provides reset level to the source electrode of TFT transistors M2.In external control circuit high electricity is provided to the grid of TFT transistors M2
Flat, when the source electrode and drain electrode of TFT transistors M2 is connected, the voltage of the source electrode of TFT transistors M2 is a resetting voltage, the reset
The size of voltage is arranged as required to, such as 3V.The level flag of TFT transistor M2 grids is Ref1, TFT transistor M2 source electrodes
Level flag is Rst.
The grid of TFT transistors M5 and external control circuit are electrically connected, the drain electrode of TFT transistors M5 and acquisition module
11 are electrically connected.External control circuit provides high level or low level to the grid of TFT transistors M5, to control TFT crystal
The break-make of pipe M5 source electrode and drain electrodes.The level flag of TFT transistor M5 grids is COL.TFT transistors M1 in the present embodiment~
M5 is N-type TFT transistors, it will be understood that TFT transistors M1~M5 can also be selected as p-type TFT transistors, at this time p-type TFT
The connection type of the source electrode and drain electrode of transistor is opposite with respect to the connection type of the source electrode and drain electrode of N-type TFT transistors.TFT
The source electrode of transistor or drain electrode electrically connect the stage as two, and the source electrode or drain electrode one of both of TFT transistors are TFT transistors
First end, another one be TFT transistors second end.First end such as acquisition module 11 and the TFT transistors M5 of N-type is electrical
Connection, then when TFT transistors M5 is P-channel, acquisition module 11 needs and the second end of the TFT transistors M5 of p-type is electrically connected.
It is appreciated that TFT transistors M2 and M5 can omit setting, the drain electrode of TFT transistors M3 is made to be electrically connected with acquisition module.
Acquisition module 11 is used to detect the electric signal of the transmission of ultrasonic wave identification circuit 10.Acquisition module 11 can be a silicon substrate
Processing chip.It is appreciated that acquisition module 11 can be electrically connected other circuits.
Referring to Fig. 2, when in use, in a cycle, in the T0 stages, to the source electrode and TFT transistors of TFT transistors M3
The voltage of electrical node between the drain electrode of M5 is resetted.Specifically, signal control is as follows：External control circuit gives TFT crystalline substances
It is suitable that the source electrode of body pipe M2 provides size, and whole cycle size sustained voltage Ref1, such as 3V, external control circuit
The source electrode and drain electrode conducting that of short duration high level Rst, a TFT transistor M2 is provided to the grid of TFT transistors M2, keeps TFT brilliant
The source electrode of body pipe M3, the drain voltage of TFT transistors M5 reset equal with the source voltage Ref1 of TFT transistors M2.External
It supplements energy circuit and provides the sustained voltage Dbias of whole cycle size, voltage to the drain electrode of TFT transistors M1 always
Dbias is less than the threshold voltage of TFT transistors M1.External power supply Vcc persistently gives the source electrode of TFT transistors M4 to provide whole cycle
The sustained electric current of size and/or voltage.Assuming that the reception of ultrasonic wave is lived through before this stage, this stage receiver Rx
Second end voltage Vpe more than TFT transistors M1 drain electrode provide voltage Dbias, at this time external control circuit give TFT crystal
The level Gdbias that the grid of pipe M1 provides is low level, since low level Gdbias is less than the threshold voltage of TFT transistors M1,
So TFT transistors M1 is off.External control circuit is stable to the voltage Tx that receiver Rx first ends provide
Voltage, such as 0V, 5V or 10V, which is set as needed, is not limited in the present embodiment.External control circuit gives TFT crystalline substances
The level ROW that the grid of body pipe M3 provides is low level, and TFT transistors M3 is disconnected.External control circuit gives TFT transistors M5
The level COL that provides of grid be low level, TFT transistors M5 is disconnected.
In the T1 stages, so that the voltage Vpe of the second end of receiver Rx is resetted, voltage Vpe is made to be carried equal to external control circuit
The voltage Dbias of confession.Specifically, signal control is as follows：External control circuit provides receiver to the grid of TFT transistors M1
The source electrode and drain electrode of reset level, TFT transistors M1 electrically conducts, and the voltage Vpe of the receiver Rx second ends becomes smaller, and receives
The voltage Vpe of device Rx second ends is equal with the voltage Dbias that supplement energy circuit is provided to the drain electrode of TFT transistors M1.At this time
The voltage that external control circuit is provided to receiver Rx first ends is constant.Grid of the external control circuit to TFT transistors M3
The level ROW of offer is low level, and TFT transistors M3 is disconnected.External control circuit is provided to the grid of TFT transistors M5
Level COL is low level, and TFT transistors M5 is disconnected.The level that external control circuit is provided to the grid of TFT transistors M2
Rst is low level, and TFT transistors M2 is disconnected.
In the T2 stages, receiver Rx is made to generate piezoelectric effect to emit ultrasonic wave.Specifically, signal control is as follows：It is external
Control circuit to TFT transistors M1 grid provide receiver reset level remain unchanged, external control circuit is to institute
The first end for stating receiver Rx provides of short duration pulse signal Tx, and receiver Rx is because piezoelectric effect generates ultrasonic signal and emits
It goes out.The second end of receiver Rx will produce a certain size coupled signal, and Vpe has concussion, due to the source of TFT transistors M1
Pole and drain it is two-way electrically conduct, the voltage Dbias phases that the voltage Vpe of receiver Rx second ends and supplement energy circuit provide
Deng.The level ROW that external control circuit is provided to the grid of TFT transistors M3 is low level, and TFT transistors M3 is disconnected.Outside
The level COL that the control circuit in portion is provided to the grid of TFT transistors M5 is low level, and TFT transistors M5 is disconnected.External control
The level Rst that circuit processed is provided to the grid of TFT transistors M2 is low level, and TFT transistors M2 is disconnected.
In the T3 stages, a large amount of ultrasonic wave is propagated outward, i.e., reserves the propagation time to ultrasonic wave.Specifically, control
Signal is as follows：The voltage that external control circuit is provided to the first end of the receiver Rx is consistent with the T0 stages, receiver Rx
Ultrasonic wave is no longer generated, the level ROW that external control circuit is provided to the grid of TFT transistors M3 is low level, TFT crystal
Pipe M3 is disconnected.The level COL that external control circuit is provided to the grid of TFT transistors M5 is low level, and TFT transistors M5 is disconnected
It opens.The level Rst that external control circuit is provided to the grid of TFT transistors M2 is low level, and TFT transistors M2 is disconnected.Outside
The receiver reset level that the control circuit in portion is provided to the grid of TFT transistors M1 remains unchanged.
In the T4 stages, TFT transistors M1 is to receive ultrasonic wave to prepare.Specifically, control signal is as follows：The ultrasound of transmitting
Wave encounters object and starts to return, and such as encounters the finger of people.When the T4 stages are initial, external control circuit gives TFT transistors M1
Grid provide gate voltage level, allow TFT transistors M1 be in critical conduction mode, for reception ultrasonic echo prepare.It can be with
Understand, external control circuit to the grid of TFT transistors M1 provide gate voltage level can also at other moment in T4 stages,
A large amount of ultrasonic waves encounter object return reach receiver Rx before.External control circuit is provided to receiver Rx first ends
Voltage it is constant with respect to the T3 stages.The level ROW that external control circuit is provided to the grid of TFT transistors M3 is low level,
TFT transistors M3 is disconnected.The level COL that external control circuit is provided to the grid of TFT transistors M5 is low level, and TFT is brilliant
Body pipe M5 is disconnected.The level Rst that external control circuit is provided to the grid of TFT transistors M2 is low level, TFT transistors M2
It disconnects.
In the T5 stages, ultrasonic wave encounters object, is received by receiver Rx as the ultrasonic wave of finger is returned, since piezoelectricity is imitated
It answers, the voltage at the both ends receiver Rx, which changes, generates oscillator signal, is lower and is less than in the second terminal voltage Vpe of receiver Rx
When the drain voltage Dbias of TFT transistors, TFT transistors M1 will be become lightly conducting state, external benefit from critical conduction mode
It fills energy circuit and energy is supplemented to the second end of receiver Rx by TFT transistors M1, the second terminal voltage Vpe of receiver Rx becomes
Height, the grid and source voltage difference of TFT transistors M1 become smaller, at this time TFT transistors M1 be off state, the second of receiver Rx
The energy at end cannot be flowed to from the source electrode of TFT transistors M1 and be drained, since the second terminal voltage Vpe of receiver Rx has the benefit of energy
It fills, the second terminal voltage Vpe of receiver Rx gradually rises, and the source electrode and drain electrode of the TFT transistors M4 is made to be connected increasingly
Obviously, the electric current of external power supply Vcc and/or voltage can also be become larger by the drain electrode and source electrode of TFT transistors M4.And this rank
Section, the gate voltage level that external control circuit is provided to the grid of TFT transistors M1 remain unchanged, and external control circuit is connect
It is constant with respect to the T4 stages to receive the voltage that device Rx first ends provide.External control circuit is provided to the grid of TFT transistors M3
Level ROW is low level, and TFT transistors M3 is disconnected.The level that external control circuit is provided to the grid of TFT transistors M5
COL is low level, and TFT transistors M5 is disconnected.The level Rst that external control circuit is provided to the grid of TFT transistors M2 is
Low level, TFT transistors M2 are disconnected.
T6 stages, receiver Rx no longer receive the ultrasonic wave of reflection, and the second terminal voltage Vpe of receiver Rx tends towards stability.
Specifically, control signal is as follows：External control circuit provides low level, the grid of TFT transistors to the grid of TFT transistors M1
Pole and source electrode are electrically breaking.External control circuit provides high level to the grid of TFT transistors M3, makes the source of TFT transistors
Pole and drain electrode are connected.TFT transistors M3 is equivalent to a switching tube.The voltage that external control circuit is provided to receiver Rx first ends
The opposite T5 stages are constant.The level COL that external control circuit is provided to the grid of TFT transistors M5 is low level, TFT crystal
Pipe M5 is disconnected.The level Rst that external control circuit is provided to the grid of TFT transistors M2 is low level, and TFT transistors M2 is disconnected
It opens.
T7 stages, the electric signal that the detection of acquisition module 11 passes through TFT transistors M3.Specifically, control signal is as follows：It is external
Control circuit to TFT transistors M1 grid provide low level remain unchanged, external control circuit is to receiver Rx first
Hold the voltage provided constant with respect to the T6 stages.The high level ROW dimensions that external control circuit is provided to the grid of TFT transistors M3
It holds constant.The level Rst that external control circuit is provided to the grid of TFT transistors M2 is low level, and TFT transistors M2 is disconnected
It opens.External control circuit provides high level (ROW), the source electrode of the TFT transistors M5 and leakage for the grid of TFT transistors M5
Pole is connected, and the Vcc electric signals for flowing through TFT transistors M4, M3 and M5 are sensed to acquisition module 11.Vcc can reach acquisition mould
11 electric current of block and/or voltage swing are related with the voltage swing of the grid of TFT transistors M4, the electricity of the grid of TFT transistors M4
Pressure is bigger, and the electric current and/or voltage that acquisition module 11 senses are i.e. bigger, therefore ultrasonic wave identification circuit 10 can sense ultrasonic wave
Reflect the size of signal.In this way, a cycle control signal is completed, control signal is reciprocal in following cycle.
Referring to Fig. 3, the present invention provides the control mode of another ultrasonic wave identification circuit.When in use, a cycle
Interior, the voltage of the electrical node between the T0 stages, the source electrode to TFT transistors M3 and the drain electrode of TFT transistors M5 is answered
Position.Specifically, signal control is as follows：External control circuit is suitable to the source electrode offer size of TFT transistors M2, and whole cycle
Size sustained voltage Ref1, such as 3V, external control circuit give the grid of TFT transistors M2 to provide an of short duration height electricity
The source electrode and drain electrode of flat Rst, TFT transistor M2 are connected, and the drain voltage of the source electrode, TFT transistors M5 that make TFT transistors M3 is multiple
Position is equal with the source voltage Ref1 of TFT transistors M2.External supplement energy circuit is provided to the drain electrode of TFT transistors M1
Voltage Dbias, voltage Dbias are less than the threshold voltage of TFT transistors M1.External power supply Vcc persistently gives the source of TFT transistors M4
Pole provides the sustained electric current of whole cycle size and/or voltage.Assuming that the reception of ultrasonic wave is lived through before this stage,
Drain electrodes of the voltage Vpe of the second end of this stage receiver Rx more than TFT transistors M1 provides voltage Dbias, at this time external control
The level Gdbias that circuit processed is provided to the grid of TFT transistors M1 is low level, since low level Gdbias is less than TFT crystal
The threshold voltage of pipe M1, so TFT transistors M1 is off.External control circuit is provided to receiver Rx first ends
Voltage Tx is the voltage of stabilization, and such as 0V, 5V or 10V, which is set as needed, is not limited in the present embodiment.External
The level ROW that control circuit is provided to the grid of TFT transistors M3 is low level, and TFT transistors M3 is disconnected.External control electricity
The level COL that road is provided to the grid of TFT transistors M5 is low level, and TFT transistors M5 is disconnected.
In the T1 stages, so that the voltage Vpe of the second end of receiver Rx is resetted, voltage Vpe is made to be carried equal to external control circuit
The voltage Dbias of confession.Specifically, signal control is as follows：External supplement energy circuit is provided to the drain electrode of TFT transistors M1
Voltage Dbias remains unchanged, and external control circuit provides receiver reset level, TFT crystal to the grid of TFT transistors M1
The source electrode and drain electrode of pipe M1 electrically conducts, and the voltage Vpe of the receiver Rx second ends becomes smaller, the voltage of receiver Rx second ends
Vpe is equal with the voltage Dbias that supplement energy circuit is provided to the drain electrode of TFT transistors M1.External control circuit is connect at this time
It is constant to receive the voltage that device Rx first ends provide.The level ROW that external control circuit is provided to the grid of TFT transistors M3 is low
Level, TFT transistors M3 are disconnected.The level COL that external control circuit is provided to the grid of TFT transistors M5 is low level,
TFT transistors M5 is disconnected.The level Rst that external control circuit is provided to the grid of TFT transistors M2 is low level, and TFT is brilliant
Body pipe M2 is disconnected.
In the T2 stages, receiver Rx is made to generate piezoelectric effect to emit ultrasonic wave.Specifically, signal control is as follows：It is external
Supplement energy circuit to TFT transistors M1 drain electrode provide voltage Dbias remain unchanged, external control circuit is to TFT
The receiver reset level that the grid of transistor M1 provides remains unchanged, and external control circuit gives the first of the receiver Rx
End provides of short duration pulse signal Tx, and receiver Rx is because piezoelectric effect generates ultrasonic signal and launches.Receiver Rx's
Second end will produce a certain size coupled signal, and Vpe has concussion, due to the two-way electricity of source electrode and drain electrode of TFT transistors M1
Property conducting, the voltage Vpe of receiver Rx second ends and the voltage Dbias of supplement energy circuit offer are equal.External control electricity
The level ROW that road is provided to the grid of TFT transistors M3 is low level, and TFT transistors M3 is disconnected.External control circuit is given
The level COL that the grid of TFT transistors M5 provides is low level, and TFT transistors M5 is disconnected.External control circuit gives TFT crystalline substances
The level Rst that the grid of body pipe M2 provides is low level, and TFT transistors M2 is disconnected.
In the T3 stages, a large amount of ultrasonic wave is propagated outward.Specifically, control signal is as follows：External supplement energy
The voltage Dbias that circuit is provided to the drain electrode of TFT transistors M1 remains unchanged, and external control circuit is to the receiver Rx's
The voltage that first end provides is consistent with the T0 stages, and receiver Rx no longer generates ultrasonic wave, and external control circuit gives TFT transistors
The level ROW that the grid of M3 provides is low level, and TFT transistors M3 is disconnected.Grid of the external control circuit to TFT transistors M5
The level COL that pole provides is low level, and TFT transistors M5 is disconnected.External control circuit is provided to the grid of TFT transistors M2
Level Rst be low level, TFT transistors M2 is disconnected.The reception that external control circuit is provided to the grid of TFT transistors M1
Device reset level remains unchanged.
In the T4 stages, TFT transistors M1 is to receive ultrasonic wave to prepare.Specifically, control signal is as follows：The ultrasound of transmitting
Wave encounters object and starts to return, and such as encounters the finger of people.When the T4 stages are initial, external supplement energy circuit gives TFT crystal
The voltage Dbias that the drain electrode of pipe M1 provides is increased, and the voltage Dbias after raising is more than the threshold voltage of TFT transistors M1, external
Control circuit to TFT transistors M1 grid provide gate voltage level, allow TFT transistors M1 to be in critical conduction mode, this
When outside supplement energy circuit by TFT transistors M1 to receiver Rx second end supplement energy, receiver Rx second ends
Voltage Vpe gradually rise, the voltage Vpe of Rx second ends is increased to certain voltage and tends towards stability.External control circuit is connect
It is consistent with the T3 stages to receive the voltage that device Rx first ends provide.The electricity that external control circuit is provided to the grid of TFT transistors M3
Flat ROW is low level, and TFT transistors M3 is disconnected.The level COL that external control circuit is provided to the grid of TFT transistors M5
For low level, TFT transistors M5 is disconnected.The level Rst that external control circuit is provided to the grid of TFT transistors M2 is low electricity
Flat, TFT transistors M2 is disconnected.
In the T5 stages, ultrasonic wave encounters object, is received by receiver Rx as the ultrasonic wave of finger is returned, since piezoelectricity is imitated
It answers, the voltage at the both ends receiver Rx, which changes, generates oscillator signal, is lower and is less than in the second terminal voltage Vpe of receiver Rx
When the drain voltage Dbias of TFT transistors, TFT transistors M1 will be become lightly conducting state, external benefit from critical conduction mode
It fills energy circuit and energy is supplemented to the second end of receiver Rx by TFT transistors M1, the second terminal voltage Vpe of receiver Rx becomes
Height, the grid and source voltage difference of TFT transistors M1 become smaller, at this time TFT transistors M1 be off state, the second of receiver Rx
The energy at end cannot be flowed to from the source electrode of TFT transistors M1 and be drained, since the second terminal voltage Vpe of receiver Rx has the benefit of energy
It fills, the second terminal voltage Vpe of receiver Rx gradually rises, and the source electrode and drain electrode of the TFT transistors M4 is made to be connected increasingly
Obviously, the electric current of external power supply Vcc and/or voltage can also be become larger by the drain electrode and source electrode of TFT transistors M4.And this rank
Section, the voltage Dbias that external supplement energy circuit is provided to the drain electrode of TFT transistors M1 remain unchanged consistent with the T4 stages.
The gate voltage level that external control circuit is provided to the grid of TFT transistors M1 remains unchanged, and external control circuit is to reception
The voltage that device Rx first ends provide is consistent with the T4 stages.The level that external control circuit is provided to the grid of TFT transistors M3
ROW is low level, and TFT transistors M3 is disconnected.The level COL that external control circuit is provided to the grid of TFT transistors M5 is
Low level, TFT transistors M5 are disconnected.The level Rst that external control circuit is provided to the grid of TFT transistors M2 is low electricity
Flat, TFT transistors M2 is disconnected.
T6 stages, receiver Rx no longer receive the ultrasonic wave of reflection, and the second terminal voltage Vpe of receiver Rx tends towards stability.
Specifically, control signal is as follows：The voltage Dbias that external supplement energy circuit is provided to the drain electrode of TFT transistors M1 is reduced,
Voltage Dbias after reduction is consistent with the voltage Dbias in T0 stages.External control circuit is carried to the grid of TFT transistors M1
For low level, the grid and source electrode of TFT transistors are electrically breaking.External control circuit is provided to the grid of TFT transistors M3
High level makes the source electrode and drain electrode of TFT transistors be connected.TFT transistors M3 is equivalent to a switching tube.External control circuit is connect
It is consistent with the T5 stages to receive the voltage that device Rx first ends provide.The electricity that external control circuit is provided to the grid of TFT transistors M5
Flat COL is low level, and TFT transistors M5 is disconnected.The level Rst that external control circuit is provided to the grid of TFT transistors M2
For low level, TFT transistors M2 is disconnected.
T7 stages, the electric signal that the detection of acquisition module 11 passes through TFT transistors M3.Specifically, control signal is as follows：It is external
Supplement energy circuit to TFT transistors M1 drain electrode provide voltage Dbias remain unchanged.External control circuit is to TFT
The low level that the grid of transistor M1 provides remains unchanged, the voltage and T6 that external control circuit is provided to receiver Rx first ends
Stage is consistent.The high level ROW that external control circuit is provided to the grid of TFT transistors M3 remains unchanged.External control
The level Rst that circuit is provided to the grid of TFT transistors M2 is low level, and TFT transistors M2 is disconnected.External control circuit is
The grid of TFT transistors M5 provides high level (ROW), and TFT crystal is flowed through in the source electrode and drain electrode conducting of the TFT transistors M5
The Vcc electric signals of pipe M4, M3 and M5 are sensed to acquisition module 11.Vcc can reach 11 electric current of acquisition module and/or voltage is big
Small related with the voltage swing of grid of TFT transistors M4, the voltage of the grid of TFT transistors M4 is bigger, and acquisition module 11 is felt
The electric current and/or voltage measured is i.e. bigger, therefore ultrasonic wave identification circuit 10 can sense the size of ultrasonic reflections signal.Such as
This, a cycle controls signal and completes, and control signal is reciprocal in following cycle.
The present invention also provides a kind of fingerprint Identification sensor, which uses above-mentioned ultrasonic wave identification
Circuit 10.Fingerprint Identification sensor includes multiple above-mentioned ultrasonic wave identification circuits 10, multiple 10 arrays of ultrasonic wave identification circuit
Arrangement, wherein the grid received signal of TFT transistors M3 is recorded as row selects signal, TFT in each ultrasonic wave identification circuit 10
The grid received signal of transistor M4 is recorded as column selection signal.When acquisition module 11 collects the electric signal of Vcc, the control
Circuit, that is, can be known detects the position for the ultrasonic wave identification circuit 10 for receiving ultrasonic wave, such as which row, which row.
Compared with prior art, ultrasonic wave identification circuit of the invention includes receiver Rx, three TFT transistors M1, M3
And there is piezoelectric effect, the first end of the receiver Rx and external control circuit to be electrically connected by M4, the receiver Rx, institute
It states the second end of receiver Rx to be electrically connected with the first end of the grid of TFT transistors M4, TFT transistors M1 simultaneously, the TFT
The grid of transistor M1, second end are all electrically connected with external control circuit, the first end of the TFT transistors M4 and outside
Power Vcc is electrically connected, and the second end of the TFT transistors M4 and the first end of TFT transistors M3 are electrically connected, the TFT
The grid of transistor M3 and external control circuit are electrically connected, and the second end acquisition module of the TFT transistors M3 electrically connects
Connect, do not have to using diode with TFT coupled in parallel, simple in structure, manufacture craft good compatibility is simple for process, easy
It makes, and external control circuit can supplement energy by TFT transistors M1 to receiver Rx, reduce external control circuit
To the pulse voltage that the first end of receiver Rx provides, the energy of receiver Rx transmitting ultrasonic waves is without excessive.
Compared with prior art, fingerprint Identification sensor of the invention uses above-mentioned ultrasonic wave identification circuit, no
With use diode with TFT coupled in parallel, simple in structure, manufacture craft good compatibility is simple for process, be easy make, and
External control circuit can supplement energy by TFT transistors M1 to receiver Rx, reduce external control circuit to reception
The pulse voltage that the first end of device Rx provides, the energy of receiver Rx transmitting ultrasonic waves is without excessive.
The ultrasonic wave identification circuit of the present invention includes multiple, and the ultrasonic wave identification circuit array setting, fingerprint recognition passes
Sensor is simple in structure, it is easy to which detection receives the position of the circuit of ultrasonic wave, and detection is accurate.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all originals in the present invention
Any modification made by within then, equivalent replacement and improvement etc. should all include within protection scope of the present invention.
Claims (10)
1. a kind of ultrasonic wave identification circuit is used to receive the control of external control circuit, generates ultrasonic wave and receive reflection
Ultrasonic wave to generate electric signal transmission to acquisition module, it is characterised in that：The ultrasonic wave identification circuit includes receiver Rx, and three
A TFT transistors M1, M3 and M4, the receiver Rx have piezoelectric effect, the first end of the receiver Rx and external control
Circuit processed is electrically connected, the second end of the receiver Rx simultaneously and the grid of TFT transistors M4, TFT transistors M1 first
End is electrically connected, and the grid of the TFT transistors M1, second end are all electrically connected with external control circuit, the TFT crystal
The first end and external power supply Vcc of pipe M4 is electrically connected, the second end of the TFT transistors M4 and the first of TFT transistors M3
End is electrically connected, and the grid of the TFT transistors M3 and external control circuit are electrically connected, and the of the TFT transistors M3
Two ends are electrically connected with acquisition module.
2. ultrasonic wave identification circuit as described in claim 1, it is characterised in that：The ultrasonic wave identification circuit further includes TFT
The first end of transistor M2, TFT transistor M2 and the second end of TFT transistors M3 are electrically connected, the grid of the TFT transistors M2
The control circuit of pole, second end and outside is electrically connected.
3. ultrasonic wave identification circuit as claimed in claim 2, it is characterised in that：The ultrasonic wave identification circuit further includes TFT
The second end of transistor M5, the TFT transistors M3 and the first end of TFT transistors M5 are electrically connected, the TFT transistors M5
Grid and external control circuit be electrically connected, the second end and acquisition module of the TFT transistors M5 are electrically connected.
4. ultrasonic wave identification circuit as described in claim 1, it is characterised in that：The acquisition module is silicon substrate processing chip.
5. ultrasonic wave identification circuit as claimed in claim 2, it is characterised in that：It is connected with the drain electrode of the TFT transistors M1
The control circuit of outside be supplement energy circuit, the supplement energy circuit provides stable voltage and or current.
6. ultrasonic wave identification circuit as claimed in claim 5, it is characterised in that：The control circuit of the outside gives TFT crystal
The grid of pipe M1 provides receiver reset level, and the source electrode and drain electrode of the TFT transistors M1 electrically conducts, the receiver Rx
The voltage of second end is equal with the voltage that supplement energy circuit provides, and the control circuit of the outside gives the receiver Rx later
First end of short duration pulse signal is provided, the receiver RX generates ultrasonic signal and simultaneously launches, later the outside
Control circuit provide gate voltage level to the grid of TFT transistors M1, ultrasonic wave returned by blocking reflected, the receiver
Rx receives ultrasonic oscillation and generates oscillator signal, and when the oscillator signal voltage is lower, the supplement energy circuit passes through TFT crystalline substances
Body pipe M1 supplements energy to the second end of receiver Rx, and the second terminal voltage of receiver Rx is got higher, and makes the telecommunications of external power supply Vcc
Number become larger by the drain electrode of TFT transistors M4 and the electric current and/or voltage of source electrode, external control circuit is TFT transistors M3
Grid high level is provided, the source electrode and drain electrode conducting of the TFT transistors M3, the electric signal of Vcc by TFT transistors M4 and
M3 is sensed to acquisition module, and the voltage of the receiver reset level is more than the voltage of gate voltage level.
7. ultrasonic wave identification circuit as claimed in claim 6, it is characterised in that：The control circuit of the outside gives TFT crystal
When the grid of pipe M1 provides receiver reset level, external control circuit is suitable to the source electrode offer size of TFT transistors M2, and
The sustained voltage of whole cycle size, external control circuit provide an of short duration height electricity to the grid of TFT transistors M2
Flat, external supplement energy circuit gives the second end of TFT transistors M1 to provide the sustained voltage of whole cycle size always,
External power supply Vcc persistently gives the first end of TFT transistors M4 to provide the sustained electric current of whole cycle size and/or voltage,
The level that external control circuit is provided to the grid of TFT transistors M1 is low level, and external control circuit is to receiver Rx first
The voltage Tx that end provides is the voltage of stabilization, and the level that external control circuit is provided to the grid of TFT transistors M3 is low electricity
It is flat.
8. ultrasonic wave identification circuit as claimed in claim 5, it is characterised in that：To the source electrode and TFT crystal of TFT transistors M3
The voltage of electrical node between the drain electrode of pipe M5 is resetted, and so that the voltage Vpe of the second end of receiver Rx is resetted, is made voltage
Vpe is equal to the voltage that external control circuit provides, and makes receiver Rx generation piezoelectric effects to emit ultrasonic wave later, later TFT
Transistor M1 is to receive ultrasonic wave to prepare, the voltage that external supplement energy circuit is provided to the second end of TFT transistors M1
It increases, the voltage after raising is more than the threshold voltage of TFT transistors M1, grid of the external control circuit to TFT transistors M1
Gate voltage level is provided, TFT transistors M1 is allowed to be in critical conduction mode, external supplement energy circuit passes through TFT crystalline substances at this time
Body pipe M1 supplements energy to the second end of receiver Rx, and the voltage Vpe of receiver Rx second ends gradually rises, the electricity of Rx second ends
Pressure Vpe is increased to certain voltage and tends towards stability, and ultrasonic wave is encountered object return and received by receiver Rx later, due to piezoelectricity
Effect, the voltage at the both ends receiver Rx, which changes, generates oscillator signal, and external supplement energy circuit passes through TFT transistors M1
Energy is supplemented to the second end of receiver Rx, the second terminal voltage Vpe of receiver Rx gradually rises, and makes the TFT transistors M4
Source electrode and drain electrode conducting be more and more obvious, the electric current and/or voltage of external power supply Vcc can pass through the leakage of TFT transistors M4
Pole and source electrode also become larger, and receiver Rx no longer receives the ultrasonic wave of reflection, and the second terminal voltage Vpe of receiver Rx tends to be steady
Fixed, external control circuit provides high level, the source electrode of the TFT transistors M3 and leakage for the grid of TFT transistors M3 later
Pole is connected, and the electric signal of Vcc is sensed by TFT transistor M4 and M3 to acquisition module.
9. a kind of fingerprint Identification sensor, it is characterised in that：The fingerprint Identification sensor uses any one of claim 1-8 institutes
The ultrasonic wave identification circuit stated.
10. fingerprint Identification sensor as claimed in claim 9, it is characterised in that：The ultrasonic wave identification circuit include it is multiple,
Multiple ultrasonic wave identification circuit array settings.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020228573A1 (en) * | 2019-05-16 | 2020-11-19 | 京东方科技集团股份有限公司 | Fingerprint recognition driving circuit and module, touch screen, display apparatus, and driving method |
| WO2020253588A1 (en) * | 2019-06-20 | 2020-12-24 | 京东方科技集团股份有限公司 | Fingerprint recognition device, display panel, display device, and fingerprint recognition method |
| WO2021000914A1 (en) * | 2019-07-04 | 2021-01-07 | 京东方科技集团股份有限公司 | Ultrasonic induction circuit and driving method therefor, and display apparatus and storage medium |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110279662A1 (en) * | 2010-05-11 | 2011-11-17 | Schneider John K | Reflex Longitudinal Imaging Using Through Sensor Insonification |
| US20140266262A1 (en) * | 2013-03-14 | 2014-09-18 | Perkinelmer Holdings, Inc. | High resolution fingerprint imaging device |
| US20150015515A1 (en) * | 2013-07-15 | 2015-01-15 | Qualcomm Incorporated | Method and integrated circuit for operating a sensor array |
| US20150198699A1 (en) * | 2014-01-13 | 2015-07-16 | Qualcomm Incorporated | Ultrasonic imaging with acoustic resonant cavity |
| CN106897715A (en) * | 2017-03-31 | 2017-06-27 | 努比亚技术有限公司 | A kind of unlocked by fingerprint processing method and mobile terminal |
| CN107092900A (en) * | 2017-06-01 | 2017-08-25 | 京东方科技集团股份有限公司 | Fingerprint recognition circuit and its driving method, display panel |
| CN107220630A (en) * | 2017-06-07 | 2017-09-29 | 京东方科技集团股份有限公司 | Display base plate and its driving method, display device |
| US20180046836A1 (en) * | 2016-08-11 | 2018-02-15 | Qualcomm Incorporated | Single transducer fingerprint system |
| CN107923969A (en) * | 2015-09-01 | 2018-04-17 | 高通股份有限公司 | The pixel receiver with capacitance elimination for supersonic imaging device |
| CN107977602A (en) * | 2017-10-10 | 2018-05-01 | 成都安瑞芯科技有限公司 | Ultrasonic fingerprint identification module, module, device and electronic equipment |
| CN108024792A (en) * | 2015-09-26 | 2018-05-11 | 高通股份有限公司 | Ultrasonic imaging apparatus and method |
| CN208521297U (en) * | 2018-06-21 | 2019-02-19 | 成都安瑞芯科技有限公司 | Ultrasonic wave identification circuit and fingerprint Identification sensor |
-
2018
- 2018-06-21 CN CN201810645441.5A patent/CN108596160B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110279662A1 (en) * | 2010-05-11 | 2011-11-17 | Schneider John K | Reflex Longitudinal Imaging Using Through Sensor Insonification |
| US20140266262A1 (en) * | 2013-03-14 | 2014-09-18 | Perkinelmer Holdings, Inc. | High resolution fingerprint imaging device |
| US20150015515A1 (en) * | 2013-07-15 | 2015-01-15 | Qualcomm Incorporated | Method and integrated circuit for operating a sensor array |
| US20150198699A1 (en) * | 2014-01-13 | 2015-07-16 | Qualcomm Incorporated | Ultrasonic imaging with acoustic resonant cavity |
| CN107923969A (en) * | 2015-09-01 | 2018-04-17 | 高通股份有限公司 | The pixel receiver with capacitance elimination for supersonic imaging device |
| CN108024792A (en) * | 2015-09-26 | 2018-05-11 | 高通股份有限公司 | Ultrasonic imaging apparatus and method |
| US20180046836A1 (en) * | 2016-08-11 | 2018-02-15 | Qualcomm Incorporated | Single transducer fingerprint system |
| CN106897715A (en) * | 2017-03-31 | 2017-06-27 | 努比亚技术有限公司 | A kind of unlocked by fingerprint processing method and mobile terminal |
| CN107092900A (en) * | 2017-06-01 | 2017-08-25 | 京东方科技集团股份有限公司 | Fingerprint recognition circuit and its driving method, display panel |
| CN107220630A (en) * | 2017-06-07 | 2017-09-29 | 京东方科技集团股份有限公司 | Display base plate and its driving method, display device |
| CN107977602A (en) * | 2017-10-10 | 2018-05-01 | 成都安瑞芯科技有限公司 | Ultrasonic fingerprint identification module, module, device and electronic equipment |
| CN208521297U (en) * | 2018-06-21 | 2019-02-19 | 成都安瑞芯科技有限公司 | Ultrasonic wave identification circuit and fingerprint Identification sensor |
Non-Patent Citations (1)
| Title |
|---|
| X. JIANG等: "Ultrasonic Fingerprint Sensor With Transmit Beamforming Based on a PMUT Array Bonded to CMOS Circuitry", IEEE TRANSACTIONS ON ULTRASONICS, FERROELECTRICS, AND FREQUENCY CONTROL * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020228573A1 (en) * | 2019-05-16 | 2020-11-19 | 京东方科技集团股份有限公司 | Fingerprint recognition driving circuit and module, touch screen, display apparatus, and driving method |
| US11157712B2 (en) | 2019-05-16 | 2021-10-26 | Boe Technology Group Co., Ltd. | Fingerprint recognition driving circuit, fingerprint recognition module, touch screen, display device and fingerprint recognition driving method |
| WO2020253588A1 (en) * | 2019-06-20 | 2020-12-24 | 京东方科技集团股份有限公司 | Fingerprint recognition device, display panel, display device, and fingerprint recognition method |
| WO2021000914A1 (en) * | 2019-07-04 | 2021-01-07 | 京东方科技集团股份有限公司 | Ultrasonic induction circuit and driving method therefor, and display apparatus and storage medium |
| US11537241B2 (en) | 2019-07-04 | 2022-12-27 | Boe Technology Group Co., Ltd. | Ultrasonic induction circuit, driving method thereof, display device and storage medium |
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