CN108573200A - Package structure and method for fabricating the same - Google Patents
Package structure and method for fabricating the same Download PDFInfo
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- CN108573200A CN108573200A CN201710168798.4A CN201710168798A CN108573200A CN 108573200 A CN108573200 A CN 108573200A CN 201710168798 A CN201710168798 A CN 201710168798A CN 108573200 A CN108573200 A CN 108573200A
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- protective layer
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- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000010410 layer Substances 0.000 claims abstract description 73
- 239000011241 protective layer Substances 0.000 claims abstract description 51
- 238000002360 preparation method Methods 0.000 claims abstract description 25
- 229920000642 polymer Polymers 0.000 claims description 25
- 238000012545 processing Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 4
- 125000001153 fluoro group Chemical group F* 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000004806 packaging method and process Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 description 7
- 239000004642 Polyimide Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000000084 colloidal system Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 230000019491 signal transduction Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000000748 compression moulding Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229920002577 polybenzoxazole Polymers 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 230000003542 behavioural effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 230000001755 vocal effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Human Computer Interaction (AREA)
- Multimedia (AREA)
- Theoretical Computer Science (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Dicing (AREA)
Abstract
A packaging structure and its preparation method, combine an electronic component with protective layer on it on a bearing part, and then coat the side of the electronic component and the protective layer with the packaging layer, and make the upper surface of the protective layer expose the packaging layer, so in the subsequent process of singulating, the cutter does not need to pass through the protective layer, therefore can avoid the problem that the edge of the packaging structure produces the deckle edge.
Description
Technical field
The present invention is in relation to a kind of encapsulating structure, espespecially a kind of encapsulating structure of fingerprint sensing device.
Background technology
As consumer promotes the emphasis degree of privacy, many high-order electronic products have all loaded user and have recognized system
System, to increase the safety of data in electronic product, therefore the research and development of identification system with design with consumer demand, and become
One of electronic industry the main direction of development.
In Biometrics, according to identification target difference can summarize be divided into identification biology physiological characteristic (e.g., refer to
Line, pupil, face, vocal print) types such as identification and behavioural characteristic (e.g., signature, voice) Biometrics, wherein identification
The Biometrics of physiological characteristic have many advantages, such as unicity, anti-fake degree height with it is convenient, and this technology gradually maturation and
It is widely used in personal status identification and confirms, therefore widely consumer is received.
In existing fingeprint distinguisher, the scan mode according to fingerprint is divided into the optical fingerprint identification of scanning fingerprint pattern
The capacitance type fingerprint device for identifying of device and the trace quantity electric charge in detecting fingerprint lines, wherein capacitance type fingerprint device for identifying can
It repartitions as passive type and active two kinds.
In existing passive capacitive identification of fingerprint technology, through the parasitism between the finger and fingeprint distinguisher of user
The interactive relation of capacitance, to reach the output of small voltage difference, but existing passive capacitance type fingerprint device for identifying is easily because miscellaneous
News are interfered and cause its identification accuracy bad.In the existing capacitive identification of fingerprint technology of active, by exporting pulse signal
To the finger of user, the pulse signal transmitted through finger is received and recognized then at finger contact zone, and then obtains fingerprint money
News, therefore compared to passive capacitance type fingerprint device for identifying, active capacitance type fingerprint device for identifying has higher interference resistant ability
And preferably recognize accuracy.
As shown in Figure 1, the encapsulating structure 1 of existing capacitance type fingerprint sensor (fingerprint sensor) is in a substrate
Sensor chip 11 of the setting one with sensing face 11a on 10, then the sensor chip 11 is coated with packing colloid 13 and exposes outside this
Sensing face 11a is damaged to avoid the sensor chip 11 in sticking a protective film 12 on sensing face 11a and the packing colloid 13 later
Wound finally carries out singulation processing procedure.This this, user can be enabled by touching protective film 12 on sliding (swipe) sensing face 11a should
Sensor chip 11 senses fingerprint.
Only, in the making of existing encapsulating structure 1, when carrying out singulation processing procedure, cutter (not shown) need to cut through the packaging plastic
Body 13 waits two kinds of structures with the protective film 12, causes the frictional force suffered by cutter different, thus hinders the fluency of cutting, therefore should
The edge of encapsulating structure 1 has the problem of flash R.
Therefore, how to overcome above-mentioned problem of the prior art, have become the project for wanting to solve at present in fact.
Invention content
In view of the missing of the above-mentioned prior art, a kind of electron package structure of present invention offer and its preparation method, and can avoid should
The edge of encapsulating structure leads to the problem of flash.
The encapsulating structure of the present invention, including：Load-bearing part；Electronic component, with opposite sensing face and non-sensing face, and
The electronic component is combined with the non-sensing face and is electrically connected the load-bearing part；Protective layer is formed in the sensing of the electronic component
On face；And encapsulated layer, it is formed in coat the side of the electronic component and the protective layer on the load-bearing part, and enable the protection
The upper surface of layer exposes outside the encapsulated layer.
The present invention also provides a kind of preparation methods of encapsulating structure, including：There is provided at least one has opposite sensing face and non-sense
The electronic component in survey face, and in being combined with a protective layer in the sensing face；The electronic component is combined into simultaneously electricity with the non-sensing face
Property connection one load-bearing part；And formed encapsulated layer on the load-bearing part to coat the side of the electronic component and the protective layer, and
The upper surface of the protective layer is enabled to expose outside the encapsulated layer.
In preparation method above-mentioned, the processing procedure of the electronic component includes：A wafer for including multiple electronic components is provided, and should
Protective layer is incorporated into the full page face of the wafer；And singulation processing procedure is carried out, to obtain multiple electronic components with the protective layer.
In preparation method above-mentioned, the processing procedure of the protective layer includes：The first insulating layer is formed on the electronic component, and this first
Multiple recess portions are formed in insulating layer；And second insulating layer is formed in the recess portion.
Further include carrying out singulation processing procedure after forming the encapsulated layer in preparation method above-mentioned.
In encapsulating structure above-mentioned and its preparation method, the material for forming the protective layer is the polymer that dielectric constant is at least 9.
For example, the polymer is fluorine-containing or silicon oxide-containing.
In encapsulating structure above-mentioned and its preparation method, which includes the first insulating layer and tool with the first dielectric constant
There is the second insulating layer of the second dielectric constant, and first dielectric constant is different from second dielectric constant.For example, first Jie
Electric constant is at least 9, and second dielectric constant is less than 9；Alternatively, the position of first insulating layer corresponds to the sense of the electronic component
Pixel is surveyed, and the position of the second insulating layer corresponds to the spaced-apart locations between wantonly two adjacent sensor pixels of the electronic component.
From the foregoing, it will be observed that the encapsulating structure and its preparation method of the present invention, mainly by the way that the protective layer is first incorporated into electronics member
On part, then the electronic component coated with the encapsulated layer, thus in follow-up singulation processing procedure, cutter needs not move through the protective layer, therefore
Compared with the prior art, encapsulating structure of the invention can avoid its edge and lead to the problem of flash.
In addition, the polymer that the encapsulating structure of the present invention is at least 9 by dielectric constant is used as the protective layer, news can be enhanced
Number conducting power.
Description of the drawings
Fig. 1 is the diagrammatic cross-section of existing encapsulating structure；
Fig. 2A to Fig. 2 E is the diagrammatic cross-section of the preparation method of the first embodiment of the encapsulating structure of the present invention；And
Fig. 3 A to Fig. 3 C are the diagrammatic cross-section of the preparation method of the second embodiment of the encapsulating structure of the present invention；Wherein, Fig. 3 B '
For the partial enlarged view of corresponding diagram 3B, Fig. 3 B " are the schematic diagram of another embodiment of corresponding diagram 3B '.
Symbol description:
1,2,3 encapsulating structures
10 substrates
11 sensor chips
11a, 21a sensing face
12 protective films
13 packing colloids
2a, 3a wafer
20 load-bearing parts
21 electronic components
21b non-sensings face
210 conductive bumps
22,32 protective layers
23 encapsulated layers
23a first surfaces
23b second surfaces
The first insulating layers of 32a
32b second insulating layers
320 recess portions
A sensor pixels
B spaced-apart locations
S cutting paths
R flashes.
Specific implementation mode
Illustrate that embodiments of the present invention, those skilled in the art can be by this specification below by way of specific specific example
Revealed content understands other advantages and effect of the present invention easily.The present invention can also pass through other different specific examples
It is implemented or is applied, the various details in this specification may be based on different viewpoints and application, in the essence for not departing from the present invention
God is lower to carry out various modifications and change.
It should be clear that structure, ratio, size etc. depicted in this specification institute accompanying drawings, only coordinating specification to be taken off
The content shown is not limited to the enforceable qualifications of the present invention for the understanding and reading of those skilled in the art, therefore
Do not have technical essential meaning, the modification of any structure, the change of proportionate relationship or the adjustment of size are not influencing the present invention
Under the effect of can be generated and the purpose that can reach, it should all still fall and obtain the model that can cover in disclosed technology contents
In enclosing.Cited such as "upper", " first ", " second " and " one " term in this specification are also only being illustrated convenient for narration,
Rather than to limit the scope of the invention, relativeness is altered or modified, in the case where changing technology contents without essence,
When being also considered as the enforceable scope of the present invention.
Fig. 2A to Fig. 2 E is please referred to, for the diagrammatic cross-section of the preparation method of the first embodiment of the encapsulating structure 2 of the present invention.
As shown in Figure 2 A and 2 B, the wafer 2a that one which is provided with a protective layer 22 carries out singulation processing procedure, more to obtain
A electronic component 21 with the protective layer 22.
In this present embodiment, wafer 2a includes multiple electronic components 21, and the protective layer 22 combines before singulation
In the full page face of wafer 2a.
Also, the electronic component 21 is sensor chip, for example, a kind of detecting organism charge variation, temperature difference, pressure
Deng sensor chip, more preferably identification of fingerprint chip, which is the capacitance that can be received by sensing face 21a
Difference carries out biological identification.In addition, the electronic component 21 has opposite sensing face 21a and non-sensing face 21b, wherein the sensing
Face 21a is combined with the protective layer 22.
In addition, forming the polymer that the material of the protective layer 22 was at least for 9 (being greater than or equal to 9) for dielectric constant
(polymer), such as fluorine-containing or silicon oxide-containing polyimides (polyimide, abbreviation PI) or polybenzoxazoles
(Polybenzoxazole, abbreviation PBO).
As shown in Figure 2 C, which is combined with non-sensing face 21b and is electrically connected a load-bearing part 20.
In this present embodiment, which is the line construction with core layer or seedless central layer (coreless), example
As package substrate (substrate) is such as fanned out to (fan out) type and reroutes road floor (redistribution with line layer
Layer, abbreviation RDL).It should be appreciated that the pattern of ground, the load-bearing part 20 or other carrying chips, such as lead frame
(leadframe), such as semiconductor board of wafer (wafer) or other support plates with metal line (routing), and it is unlimited
In above-mentioned.
In addition, the electronic component 21 is electrically connected the load-bearing part 20 by multiple conductive bumps 210 with rewinding method；Or
Person, in other embodiments, which can be electrically connected the load-bearing part 20 by bonding wire (not shown) in a manner of routing.
Therefore, for the electronic component 21 be electrically connected the load-bearing part 20 mode there is no particular restriction.
As shown in Figure 2 D, formed an encapsulated layer 23 on the load-bearing part 20 to coat the electronic component 21 and the protective layer 22
Part surface (side), so that the electronic component 21 is embedded into the encapsulated layer 23, and enable the protective layer 22 part surface (on
Surface) expose to the encapsulated layer 23.
In this present embodiment, which has opposite first surface 23a and second surface 23b, the encapsulated layer 23
It is bound on the load-bearing part 20 with its second surface 23b, and the upper surface of the protective layer 22 is enabled to expose to the of the encapsulated layer 23
One surface 23a.
In addition, formed the encapsulated layer 23 material be polyimides (polyimide, abbreviation PI), dry film (dry film),
Epoxy resin (epoxy) or package material (molding compound), but be not limited to above-mentioned.
Also, forming the method for the encapsulated layer 23 to press in a manner of (laminating) or such as compression molding (compression
Molding), moldings formed therefroms (molding) mode such as metaideophone molding (transfer molding) is completed.
As shown in Figure 2 E, singulation processing procedure is carried out along cutting path S as shown in Figure 2 D.
Accordingly, in the preparation method of encapsulating structure of the invention, first the protective layer 22 is incorporated on the electronic component 21, then with
The encapsulated layer 23 coats the electronic component 21, therefore in follow-up singulation processing procedure, cutting path S is only needed by the encapsulated layer 23,
Without contacting the protective layer 22, thus the edge of the encapsulating structure 2 not will produce flash.
Further, since the signal transduction ability of high dielectric constant polymer is more preferable compared to low dielectric constant polymer, therefore
The polymer that the encapsulating structure 2 of the present invention is at least 9 by dielectric constant is used as the protective layer 22, can enhance signal transduction energy
Power.
Fig. 3 A to Fig. 3 C are please referred to, for the diagrammatic cross-section of the preparation method of the second embodiment of the encapsulating structure 3 of the present invention.
The present embodiment different from the first embodiment is the construction of protective layer, and other structures are roughly the same, therefore is only described in detail below
Deviation, and repeat no more and mutually exist together, it states clearly hereby.
As shown in Figure 3A, one is provided to which is provided with one first insulating layer 32a and define the wafer 3a for there are multiple electronic components,
Wherein, multiple recess portions 320 are formed in first insulating layer 32a.
In this present embodiment, the material for forming first insulating layer 32a is the polymerization for being at least 9 with the first dielectric constant
Object (polymer).
As shown in Figure 3B, a second insulating layer 32b is formed in those recess portions 320, to enable first and second insulating layer
32a, 32b constitute a protective layer 32.
In this present embodiment, the material for forming second insulating layer 32b is to be less than 9 (such as 4 or low with the second dielectric constant
In polymer 4), and first dielectric constant is different from second dielectric constant, and it includes different dielectric to make the protective layer 32
The polymer of constant, that is, the protective layer 32 can have the polymer of high-k and the polymer of low-k simultaneously.
In addition, as shown in Fig. 3 B ', the position of the polymer (the first insulating layer 32a) of high-k corresponds to the electronics
The sensor pixel A of element 21, and the position of the polymer (the second insulating layer 32b) of low-k then corresponds to the electronic component
Spaced-apart locations B between 21 wantonly two adjacent sensor pixel A makes (interspersed) row of two insulating layer 32a, 32b interaction set.Ying Keli
Xie Di, in another embodiment, as shown in Fig. 3 B ", can prior to formed on the wafer 3a low-k polymer (i.e. this
Two insulating layer 32b), and the recess portion 320 is made to expose outside sensor pixel A, formed later high-k polymer (i.e. this
One insulating layer 32a) in those recess portions 320 and cover sensor pixel A.
Also, the recess portion 320 is also extend in the electronic component 21, to strengthen the function and its and electronics of the protective layer 32
The combination of element 21.
As shown in Figure 3 C, the wafer 3a with the protective layer 32 is subjected to singulation processing procedure, it is multiple with the protection to obtain
The electronic component 21 of layer 32.Then, which is combined and is electrically connected a load-bearing part 20.Later, an encapsulation is formed
Layer 23 on the load-bearing part 20 in, to coat the electronic component 21, and enabling the part surface (upper surface) of the protective layer 32 expose outside this
Encapsulated layer 23.
Therefore, the encapsulating structure 3 of the present embodiment can be improved by the polymer (the first insulating layer 32a) of high-k
Come from finger signal strength to improve the accuracy of sensing, and passes through the polymer of low-k (second insulating layer
It 32b) then can avoid the interference of the sensing signal between neighbouring sensor pixel A.
In addition, when the encapsulating structure 2,3 of the present invention is applied to fingerprint sensing device, its finger is touched the protection by user
Layer 22,32, in the way of charge variation, temperature difference, pressure etc., to make sensing face 21a scan its received capacitance difference, in order to
It is recognized for the electronic component 21 of such as sensor chip.
The present invention also provides a kind of encapsulating structure 2,3, including a load-bearing part 20, one which is provided with the electricity of protective layer 22,32
Subcomponent 21 and an encapsulated layer 23.
There is the electronic component 21 opposite sensing face 21a and non-sensing face 21b, sensing face 21a to combine the guarantor
Sheath 22,32, and the electronic component 21 is combined with its non-sensing face 21b and is electrically connected the load-bearing part 20.
The encapsulated layer 23 is formed on the load-bearing part 20 to coat the part of the electronic component 21 and the protective layer 22
Surface (side), and the part surface (upper surface) of the protective layer 22 is enabled to expose outside the encapsulated layer 23.
In an embodiment, the material for forming the protective layer 22 is the polymer that dielectric constant is at least 9.For example, this is poly-
Close that object is fluorine-containing or silicon oxide-containing.
In an embodiment, which includes the first insulating layer 32a and tool for being at least 9 with the first dielectric constant
There is the second dielectric constant to be less than 9 second insulating layer 32b.For example, the dielectric constant is at least the position of 9 the first insulating layer 32a
The sensor pixel A of the corresponding electronic component 21 is set, and the position of second insulating layer 32b of the dielectric constant less than 9 corresponds to the electricity
Spaced-apart locations B between wantonly two adjacent sensor pixel A of subcomponent 21.
In conclusion in the encapsulating structure and its preparation method of the present invention, by the way that the protective layer is first incorporated into the electronic component
On, then the electronic component coated with the encapsulated layer, therefore after singulation processing procedure, the edge of the encapsulating structure not will produce flash and ask
Topic.
In addition, including the polymer that dielectric constant is at least 9 by the protective layer, to enhance signal transduction ability.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.Any institute
Belonging to field technology personnel can without violating the spirit and scope of the present invention, and modifications and changes are made to the above embodiments.Cause
This, the scope of the present invention should be as listed in the claims.
Claims (15)
1. a kind of encapsulating structure, it is characterized in that, which includes：
Load-bearing part；
Electronic component with opposite sensing face and non-sensing face, and is combined with the non-sensing face and is electrically connected the carrying
Part；
Protective layer is formed in the sensing face of the electronic component；And
Encapsulated layer is formed in coat the side of the electronic component and the protective layer on the load-bearing part, and enables on the protective layer
It is surface exposed go out the encapsulated layer.
2. encapsulating structure according to claim 1, it is characterized in that, the material for forming the protective layer is at least for dielectric constant
9 polymer.
3. encapsulating structure according to claim 2, it is characterized in that, the polymer is fluorine-containing or silicon oxide-containing.
4. encapsulating structure according to claim 1, it is characterized in that, which includes first with the first dielectric constant
Insulating layer and second insulating layer with the second dielectric constant, and first dielectric constant is different from second dielectric constant.
5. encapsulating structure according to claim 4, it is characterized in that, which is at least 9, and second dielectric
Constant is less than 9.
6. encapsulating structure according to claim 4, it is characterized in that, the position of first insulating layer corresponds to the electronic component
Sensor pixel, and the position of the second insulating layer corresponds to the spaced-apart locations between wantonly two adjacent sensor pixels of the electronic component.
7. a kind of preparation method of encapsulating structure, it is characterized in that, which includes：
At least one electronic component with opposite sensing face and non-sensing face is provided, and in being combined with a protection in the sensing face
Layer；
The electronic component is combined with the non-sensing face and is electrically connected a load-bearing part；And
Encapsulated layer is formed in, to coat the side of the electronic component and the protective layer, and enabling the upper table of the protective layer on the load-bearing part
Face exposes outside the encapsulated layer.
8. the preparation method of encapsulating structure according to claim 7, it is characterized in that, the material for forming the protective layer is dielectric constant
At least 9 polymer.
9. the preparation method of encapsulating structure according to claim 8, it is characterized in that, the polymer is fluorine-containing or silicon oxide-containing.
10. the preparation method of encapsulating structure according to claim 7, it is characterized in that, which includes to have the first dielectric normal
The first several insulating layers and the second insulating layer with the second dielectric constant, and first dielectric constant is different from second dielectric
Constant.
11. the preparation method of encapsulating structure according to claim 10, it is characterized in that, which is at least 9, and should
Second dielectric constant is less than 9.
12. the preparation method of encapsulating structure according to claim 10, it is characterized in that, the position of first insulating layer corresponds to the electricity
The sensor pixel of subcomponent, and the position of the second insulating layer corresponds to point between wantonly two adjacent sensor pixels of the electronic component
Every position.
13. the preparation method of encapsulating structure according to claim 7, it is characterized in that, the processing procedure of the electronic component includes：
A wafer for including multiple electronic components is provided, and the protective layer is incorporated into the full page face of the wafer；And
Singulation processing procedure is carried out, to obtain multiple electronic components with the protective layer.
14. the preparation method of encapsulating structure according to claim 7, it is characterized in that, the processing procedure of the protective layer includes：
The first insulating layer is formed on the electronic component, and multiple recess portions are formed in first insulating layer；And
Second insulating layer is formed in the recess portion.
15. the preparation method of encapsulating structure according to claim 7, it is characterized in that, which further includes in the formation encapsulated layer
Afterwards, singulation processing procedure is carried out.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW106107756A TWI637468B (en) | 2017-03-09 | 2017-03-09 | Package structure and the manufacture thereof |
| TW106107756 | 2017-03-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108573200A true CN108573200A (en) | 2018-09-25 |
| CN108573200B CN108573200B (en) | 2022-03-18 |
Family
ID=63575848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710168798.4A Active CN108573200B (en) | 2017-03-09 | 2017-03-21 | Package structure and method for fabricating the same |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108573200B (en) |
| TW (1) | TWI637468B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11740752B1 (en) * | 2022-07-13 | 2023-08-29 | Sigmasense, Llc. | Device with signal generator |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI718801B (en) * | 2019-12-06 | 2021-02-11 | 矽品精密工業股份有限公司 | Electronic package manufacturing method |
| CN115109464B (en) * | 2022-07-06 | 2023-07-14 | 杭州福斯特应用材料股份有限公司 | Ink composition, package structure and semiconductor device |
Citations (4)
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| TWM520196U (en) * | 2016-01-27 | 2016-04-11 | 精材科技股份有限公司 | A chip scale sensing chip package |
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| TW201834161A (en) | 2018-09-16 |
| TWI637468B (en) | 2018-10-01 |
| CN108573200B (en) | 2022-03-18 |
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