CN108520857B - Fast recovery diode and manufacturing method thereof - Google Patents
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- 238000011084 recovery Methods 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000002347 injection Methods 0.000 claims abstract description 30
- 239000007924 injection Substances 0.000 claims abstract description 30
- 238000005530 etching Methods 0.000 claims abstract description 13
- 230000003213 activating effect Effects 0.000 claims abstract description 4
- 239000012535 impurity Substances 0.000 claims abstract description 4
- 230000001590 oxidative effect Effects 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 23
- 239000002019 doping agent Substances 0.000 claims description 11
- 239000007943 implant Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 238000002513 implantation Methods 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 239000004065 semiconductor Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
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- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
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- H—ELECTRICITY
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- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
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Abstract
The invention discloses a fast recovery diode and a manufacturing method thereof, wherein the manufacturing method comprises the following steps: oxidizing the surface of the N-type buffer layer on the back of the diode main body to form an oxide layer; etching the oxide layer of the preset area on the back of the diode main body to form a window; injecting a P well into the diode main body through the window to form a P well region; etching the residual oxide layer to expose the N + + injection window; and injecting N + + impurities into the N + + injection window, and activating to enable the P well region to be in a floating state and form a built-in thyristor together with the anode region and the drift region. The P well region is formed, then N + + injection is carried out, so that the P well region is in a floating state, a built-in thyristor is formed with an anode region and a drift region of a diode main body, the compromise relation between the conduction voltage drop and the soft recovery performance of the diode is coordinated, the better compromise relation between the conduction voltage drop and the soft recovery characteristic can be obtained without thinning a silicon wafer, and the high-quality fast recovery diode is obtained.
Description
Technical Field
The invention relates to the technical field of semiconductor device preparation, in particular to a fast recovery diode and a manufacturing method thereof.
Background
The fast recovery diode (FRD for short) is a semiconductor diode with good switching characteristic and short reverse recovery time, and is mainly applied to electronic circuits such as a switching power supply, a PWM (pulse width modulation) and a frequency converter, and used as a high-frequency rectifier diode, a freewheeling diode or a damping diode. The internal structure of the fast recovery diode is different from that of a common PN junction diode, and the fast recovery diode belongs to a PIN junction diode, namely, a base region I is added between a P-type silicon material and an N-type silicon material to form a PIN silicon chip. Because the base region is very thin and the reverse recovery charge is very small, the reverse recovery time of the fast recovery diode is short, the forward voltage drop is low, and the reverse breakdown voltage (withstand voltage) is high.
An ideal FRD must have low on-state voltage drop, low reverse recovery loss and high soft recovery factor at the same time, but these characteristics have intrinsic contradiction and are difficult to be realized at the same time. The low conduction voltage drop FRD requires that the carrier concentration in the body must be high enough when the FRD is in forward conduction to ensure that the drift region obtains sufficient conductivity modulation. On the one hand, the low reverse recovery loss FRD requires that the overall carrier in the body is as low as possible when the FRD is conducted in the forward direction so that the reverse recovery charge is small, and on the other hand, requires that the carrier concentration near the anode junction is as low as possible so that the FRD can obtain low reverse recovery peak current. An FRD with good soft recovery characteristics requires a high cathode-side carrier concentration when it is turned on in the forward direction to obtain a smooth and continuous current tail.
In order to improve the soft recovery characteristic of the FRD, an FCE diode is proposed in the prior art, the diode is added with P-type injection at the cathode side, the P-type injection region, the drift region and the anode P region form a parasitic triode, and the triode can inject holes into the drift region during the FRD reverse recovery to supplement non-equilibrium carriers swept out by an electric field, thereby improving the reverse recovery performance of the diode. The FCE diode obtains better soft recovery characteristics by sacrificing part of the cathode area, and the forward conduction voltage drop is higher. The area of the P-type region directly determines the soft recovery performance of the FCE diode, if the area of the P-type region is larger, the soft recovery performance of the FCE diode is better, but the forward conduction voltage drop of the diode is higher, and if the area of the P-type region is smaller, the soft recovery performance of the FCE diode is poorer, but the forward conduction voltage drop of the diode is lower. A better compromise is usually obtained by reducing the thickness of the diode drift region, but this tends to result in a reduced safe operating region and robust performance of the diode.
Disclosure of Invention
The invention aims to provide a fast recovery diode and a manufacturing method thereof, which can coordinate the compromise relationship between the conduction voltage drop and the soft recovery performance of the diode, and can obtain better compromise relationship between the conduction voltage drop and the soft recovery performance without thinning a silicon wafer.
In order to solve the above technical problem, an embodiment of the present invention provides a method for manufacturing a fast recovery diode, including:
step 1, oxidizing the surface of an N-type buffer layer on the back of a diode main body to form an oxide layer;
step 2, etching the oxide layer of the preset area on the back surface of the diode main body to form a window;
step 3, injecting a P well into the diode main body through the windowing to form a P well region;
step 4, etching the rest oxide layer to expose an N + + injection window;
and 5, injecting N + + impurities into the N + + injection window, activating, enabling the P well region to be in a floating state, and forming a built-in thyristor together with the anode region and the drift region of the diode main body.
Wherein the implantation dosage for performing P-well implantation to the diode body is 1e14/cm2～5e14/cm2。
Wherein the amount of P-type dopant in the anode region of the diode body is 1e12/cm2～1e13/cm2。
Wherein the N-type buffer layer of the diode body has a dopant amount of 1e12/cm2～1e14/cm2。
Wherein the junction depth of the N-type buffer layer is 5-15 μm.
Wherein the P-type doped junction depth of the anode region is 5-15 μm.
In addition, the embodiment of the invention also provides a fast recovery diode, which comprises an oxidation layer, an N + + injection layer, an N-type buffer layer, a drift region and an anode region which are arranged from bottom to top, and further comprises a P well region which penetrates through the N + + injection layer from the bottom of the oxidation layer to the N-type buffer layer, wherein the P well region is in a floating state, the N + + injection layer is divided into a plurality of N + + injection regions, and a built-in thyristor is formed by the P well region, the anode region and the drift region of a diode main body.
Wherein the implantation dosage of the P well region is 1e14/cm2～5e14/cm2。
Wherein the N-type buffer layer of the diode body has a dopant amount of 1e12/cm2～1e14/cm2。
Wherein the junction depth of the N-type buffer layer is 5-15 μm.
Compared with the prior art, the fast recovery diode and the manufacturing method provided by the embodiment of the invention have the following advantages:
according to the fast recovery diode and the manufacturing method thereof provided by the embodiment of the invention, the back of the diode main body is subjected to oxidation etching to form the windowing to perform P well injection to form the P well region, then N + + injection is performed to enable the P well region to be in a floating state, the P well region and the anode region and the drift region of the diode main body form the built-in thyristor, and the compromise relationship between the conduction voltage drop and the soft recovery performance of the diode is coordinated, so that the better compromise relationship between the conduction voltage drop and the soft recovery characteristic can be obtained without thinning a silicon wafer, the high-quality fast recovery diode is obtained, the increased process steps are fewer, the process steps are also within the traditional process steps, new equipment does not need to be added, and the cost is increased less.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic flow chart illustrating steps of a method for manufacturing a fast recovery diode according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a specific implementation of a fast recovery diode according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1 to fig. 2, fig. 1 is a schematic step flow diagram illustrating a method for manufacturing a fast recovery diode according to an embodiment of the present invention; fig. 2 is a schematic structural diagram of a specific implementation of a fast recovery diode according to an embodiment of the present invention.
In one embodiment, the method for manufacturing a fast recovery diode includes:
step 1, oxidizing the surface of an N-type buffer layer on the back of a diode main body to form an oxide layer; the purpose of the oxide layer is to form a protection layer, so that selective etching can be performed later to form a P-well opening.
Step 2, etching the oxide layer of the preset area on the back surface of the diode main body to form a window; the windowing is arranged for carrying out P-well injection later to form a P-well region, the size of the windowing and the windowing mode are not limited, and dry etching or an exposure and development method can be adopted for etching.
Step 3, injecting a P well into the diode main body through the windowing to form a P well region;
step 4, etching the rest oxide layer to expose an N + + injection window;
and 5, injecting N + + impurities into the N + + injection window, activating, enabling the P well region to be in a floating state, and forming a built-in thyristor together with the anode region and the drift region of the diode main body.
The method comprises the steps of forming a windowing opening through oxidation etching on the back face of a diode main body to perform P well injection to form a P well region, then performing N + + injection to enable the P well region to be in a floating state, forming a built-in thyristor with an anode region and a drift region of the diode main body, coordinating a compromise relation between conduction voltage drop and soft recovery performance of a diode, enabling a better compromise relation between the conduction voltage drop and the soft recovery characteristic to be obtained without thinning a silicon wafer, obtaining the high-quality fast recovery diode, and being few in added process steps, and the process steps are also within the traditional process steps, so that new equipment is not needed, and cost is increased little.
In the invention, the dose of P-well implantation is not limited, the depth of the implanted ions and the ion type are not limited, and the design is required according to the acceptable manufacturing cost and the characteristics of the required fast recovery diode, and the dose of P-well implantation of the diode body is 1e14/cm2～5e14/cm2。
Wherein the junction depth of the implant is typically a few microns to tens of microns.
The characteristics of the fast diode according to the present invention are related to the P doping of the anode region and the doping and thickness of the N-type buffer layer, in addition to the characteristics of the P-well as described above.
The invention does not specifically limit the amount of the P-type dopant in the anode region of the diode body and the amount of the dopant in the N-type buffer layer of the diode body, and does not specifically limit the types of the doped particles, the doping method and the doped junction depth of the two.
The P-type dopant amount in the anode region of the diode body is typically 1e12/cm2～1e13/cm2The doping amount of the N-type buffer layer of the diode body is generally 1e12/cm2～1e14/cm2。
The junction depth of the N-type buffer layer is 5-15 mu m, and the P-type doped junction depth of the anode region is 5-15 mu m.
In one embodiment, the P well of the fast recovery diode manufactured by the method has the dopant dosage of 5e14/cm2The amount of P-type dopant in the anode region of the diode body was 1e12/cm2The doping amount of the N-type buffer layer of the diode body is generally 1e12/cm2The depth of the knot was 10 μm. The built-in thyristor is formed by the anode region and the drift region of the diode main body, so that the obtained fast diode is compared with the FCE diode gathered in the prior art, the area of the P-type region is not reduced due to the existence of the P well region, and the area of the P-type region is expanded to a certain extent, so that the fast diode has good soft recovery performance, but the area of the N + + region is basically unchanged, and the forward direction is not changedConduction is lower.
The fast recovery diode is a fast recovery diode with a built-in thyristor, and the diode forms the built-in thyristor with an anode region and a drift region by forming a floating P well region and an N + + region in the floating P well region on the cathode of the diode. The thyristor and the diode are connected in parallel, when the diode is conducted in the forward direction, the diode provides base current for an NPN tube in the thyristor so as to trigger the thyristor to be conducted, and therefore the conduction current area of the cathode of the diode can be fully utilized, and the forward conduction voltage drop of the diode is reduced. When the diode is reversely recovered, electrons cannot flow out from the N + + region in the diode through the P well region due to the fact that the P-well is empty, and only can flow out from the N + + regions on two sides of the diode, so that the speed of the electrons flowing out from the cathode region can be limited, more electrons are reserved at the cathode in the reverse recovery of the diode, and the diode is guaranteed to have better soft recovery characteristics. In summary, the diode has a better trade-off between forward conduction voltage drop and soft recovery characteristics than the FCE diode
In addition, the embodiment of the present invention further provides a fast recovery diode, which includes an oxide layer 10, an N + + injection layer 20, an N-type buffer layer 30, a drift region 40, and an anode region 50, which are arranged from bottom to top, and further includes a P-well region 60 that passes through the N + + injection layer 20 from the bottom of the oxide layer 10 to the N-type buffer layer 30, where the P-well region 60 is in a floating state, and divides the N + + injection layer 20 into a plurality of N + + injection regions, and forms a built-in thyristor with the anode region 50 and the drift region 40 of the diode body.
Since the fast recovery diode is manufactured by the above manufacturing method of the fast recovery diode, the same friendship effect should be achieved, and the present invention is not described herein again.
The invention does not specifically limit the implantation dose and junction depth of the P-well region 60 and the implantation dose and junction depth of the N-type buffer layer, the implantation dose and well depth of the anode region,
the implant dose of the P-well region 60 is typically 1e14/cm2～5e14/cm2The doping amount of the N-type buffer layer 30 of the diode body is generally 1e12/cm2～1e14/cm2The junction depth of the N-type buffer layer 30 is 5 to 15 μm.
In summary, according to the fast recovery diode and the manufacturing method thereof provided by the embodiments of the present invention, oxidation etching is performed on the back surface of the diode body to form a window for P-well injection, so as to form a P-well region, then N + + injection is performed, so that the P-well region is formed in a floating state, and forms a built-in thyristor with the anode region and the drift region of the diode body, and coordinates a tradeoff relationship between the diode conduction voltage drop and the soft recovery performance, so that a better tradeoff relationship between the conduction voltage drop and the soft recovery performance can be obtained without thinning a silicon wafer, a high-quality fast recovery diode is obtained, the number of added process steps is small, and the process steps are also within the conventional process steps, no new equipment is required, and the cost is increased less.
The fast recovery diode and the manufacturing method provided by the invention are described in detail above. The principles and embodiments of the present invention are explained herein using specific examples, which are presented only to assist in understanding the method and its core concepts. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.
Claims (10)
1. A method of fabricating a fast recovery diode, comprising:
step 1, oxidizing the surface of an N-type buffer layer on the back of a diode main body to form an oxide layer;
step 2, etching the oxide layer of the preset area on the back surface of the diode main body to form a window;
step 3, injecting a P well into the diode main body through the windowing to form a P well region;
step 4, etching the rest oxide layer to expose an N + + injection window;
and 5, injecting N + + impurities into the N + + injection window, activating, enabling the P well region to be in a floating state, and forming a built-in thyristor together with the anode region and the drift region of the diode main body.
2. The method of claim 1 wherein the P-well implant into the body of the diode is performed at a dose of 1e14/cm2～5e14/cm2。
3. The method of claim 2, wherein the amount of P-type dopant in the anode region of the diode body is 1e12/cm2～1e13/cm2。
4. The method of claim 3, wherein the N-type buffer layer of the diode body has a dopant concentration of 1e12/cm2～1e14/cm2。
5. The method of claim 4, wherein the junction depth of the N-type buffer layer is 5 μm to 15 μm.
6. The method of claim 5, wherein the P-type doped junction depth of the anode region is 5 μm to 15 μm.
7. The utility model provides a fast recovery diode, its characterized in that includes oxide layer, N + + injection layer, N type buffer layer, drift region and the positive pole district that from the bottom up set up, still includes the follow the oxide layer bottom is passed N + + injection layer to the P well region of N type buffer layer, the P well region is the floating state, will N + + injection layer divide into a plurality of N + + injection regions, constitutes built-in thyristor with the positive pole district and the drift region of diode main part.
8. The fast recovery diode of claim 7, wherein the P-well region is implanted at a dose of 1e14/cm2～5e14/cm2。
9. The fast recovery diode of claim 8,wherein the N-type buffer layer of the diode body has a dopant amount of 1e12/cm2～1e14/cm2。
10. The fast recovery diode of claim 9, wherein the N-type buffer layer has a junction depth of 5 μm to 15 μm.
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