CN108492759A - A kind of sensor devices, optical detector circuitry and driving method, display device - Google Patents
A kind of sensor devices, optical detector circuitry and driving method, display device Download PDFInfo
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- CN108492759A CN108492759A CN201810327931.0A CN201810327931A CN108492759A CN 108492759 A CN108492759 A CN 108492759A CN 201810327931 A CN201810327931 A CN 201810327931A CN 108492759 A CN108492759 A CN 108492759A
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
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- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
A kind of sensor devices of offer of the embodiment of the present invention, optical detector circuitry and driving method, display device, are related to field of optical detection, can solve the drawback of sensor devices in the prior art photoelectric current testing result inaccuracy caused by thermocurrent；The sensor devices include being oppositely arranged first electrode and second electrode and optoelectronic semiconductor component；Optoelectronic semiconductor component is divided into light receiving area and temperature sensing area；Two sub-electrodes in first electrode and second electrode at least one electrode are not connected to；Positioned at the optoelectronic semiconductor component of light receiving area, light receiver is constituted with the first sub-electrode and third sub-electrode；Optoelectronic semiconductor component positioned at temperature sensing area constitutes temperature sensing portion with second sub electrode and the 4th sub-electrode；Wherein, in the first sub-electrode and third sub-electrode, at least one sub-electrode is transparent electrode；Second sub electrode and the 4th sub-electrode are opaque electrode.
Description
Technical field
The present invention relates to a kind of field of optical detection more particularly to sensor devices, optical detector circuitry and driving method, show
Showing device.
Background technology
An important parameter index of the uniformity of the display picture of display device as evaluation display device quality；To have
For machine light emitting diode (Organic Light Emitting Diode, abbreviation OLED) display device, because with spontaneous
Light, luminous efficiency are high, the response time is short, fine definition and the advantages that high contrast, become current most potential display
Device.
Existing OLED display is broadly divided into AMOLED (Active Matrix OLED) and PMOLED (Passive
Matrix OLED) two major classes, wherein due to AMOLED low manufacture costs, operating temperature range is big, can be used for portable device
DC driven, can be used as the advantages that high-definition large scale display device, increasingly approved by people, also become OLED
The mainstream development trend of display device.
Currently, being mostly external electrical compensation way for OLED compensation mode, such mode can only be compensated since TFT is (thin
Film transistor) show caused by feature change abnormal, it can not compensate since display is different caused by luminescent layer (EL) material aging
Often；Based on this, it is increasingly prone to be detected the intrinsic brilliance of OLED using more direct optical detection in the prior art, and
It is compensated according to testing result.
However, when using optical detection in the prior art, PIN photodiode is generally mostly used by the intrinsic brilliance of OLED
Corresponding electric signal is converted into complete, and compensate based on testing result；But in actual detection process, PIN light
Electric diode inevitably generates thermocurrent because heated, and the electric signal being an actually-received is caused to exist with PIN photodiode
OLED shines the lower electric signal (photoelectric current) converted of irradiation with deviation, and so as to cause subsequent compensation, there are deviations.
Invention content
A kind of sensor devices of the embodiment of the present invention offer, optical detector circuitry and driving method, display device, can solve
The drawback of sensor devices certainly in the prior art photoelectric current testing result inaccuracy caused by thermocurrent.
In order to achieve the above objectives, the embodiment of the present invention adopts the following technical scheme that：
On the one hand the embodiment of the present invention provides a kind of sensor devices, including be oppositely arranged first electrode and second electrode, with
And the photoelectricity contacted between the first electrode and the second electrode and with the first electrode and the second electrode
Semiconductor devices；Wherein, the optoelectronic semiconductor component is divided into light receiving area and temperature sensing area；The first electrode packet
It includes：Positioned at the first sub-electrode of the light receiving area, and the second sub electrode positioned at the temperature sensing area；Second electricity
Pole includes：Positioned at the third sub-electrode of the light receiving area, and the 4th sub-electrode positioned at the temperature sensing area；Described
Two sub-electrodes in one electrode and the second electrode at least one electrode are not connected to；Described in the light receiving area
Optoelectronic semiconductor component constitutes light receiver with first sub-electrode and the third sub-electrode；Positioned at the temperature sensing
The optoelectronic semiconductor component in area constitutes temperature sensing portion with the second sub electrode and the 4th sub-electrode；Wherein, institute
It states in the first sub-electrode and the third sub-electrode, at least one sub-electrode is transparent electrode；The second sub electrode and described
4th sub-electrode is opaque electrode.
Further, in the case where first sub-electrode is opaque electrode, first sub-electrode and described the
The two same materials of sub-electrode same layer；The third sub-electrode be opaque electrode in the case of, the third sub-electrode with it is described
The 4th same material of sub-electrode same layer.
Further, in the case where first sub-electrode is opaque electrode, first sub-electrode and described the
Two sub-electrodes are structure as a whole；The third sub-electrode be opaque electrode in the case of, the third sub-electrode with it is described
4th sub-electrode is structure as a whole.
On the other hand the embodiment of the present invention also provides a kind of optical detector circuitry, including sensor devices above-mentioned；The light
It further includes first switch module, detecting module to learn detection circuit；The detecting module is connect with the first switch module, described
First switch module independently arranged first sub-electrode and second sub electrode difference in the first electrode by the sensor devices
It is connect with light receiver and temperature sensing portion；The first switch module, in the state of being turned on and off, described in control
Break-make between sensor devices and the detecting module；The detecting module, the shape for being opened in the first switch module
Under state, controls the light receiver and the temperature sensing portion is in reverse-biased；The detecting module is additionally operable to described
In the state that one switch module is opened, the first current potential and the temperature sensing portion to the first sub-electrode of the light receiver
Second current potential of second sub electrode is stored, and is read by detecting voltage end for characterizing first current potential and described the
First electric signal parameter of the difference of two current potentials.
Further, the detecting module includes energy-storage module and second switch module；The second switch module, is used for
In the state that the first switch module is opened, controls the light receiver and the temperature sensing portion is in reverse-biased；
The energy-storage module is used in the state that the first switch module is opened, to first current potential and second current potential
It is stored；The second switch module is additionally operable in the state of unlatching, described first will stored on the energy-storage module
Current potential and second current potential are adjusted to first electric signal parameter, and are read out by the detecting voltage end.
Further, the first switch module includes the first transistor and second transistor；The first transistor
Grid is connect with first control signal end, and the first pole of the first transistor connects with the first sub-electrode of the light receiver
It connects, the second pole of the first transistor is connect with first node；The grid of the second transistor is believed with first control
Number end connection, the first pole of the second transistor connect with the second sub electrode of the temperature sensing portion, second crystal
Second pole of pipe is connect with second node；The third sub-electrode of the light receiver and the 4th son electricity of the temperature sensing portion
Extremely it is connect with the first voltage end；And/or the energy-storage module includes storage capacitance, a pole of the storage capacitance with
The first node connection, another pole is connect with the second node；And/or the second switch module includes third crystal
Pipe and the 4th transistor；The grid of the third transistor is connect with second control signal end, and the first of the third transistor
Pole is connect with the first node, and the second pole of the third transistor is connect with the detecting voltage end；4th crystal
The grid of pipe is connect with the second control signal end, and the first pole of the 4th transistor is connect with the second node, institute
The second pole for stating the 4th transistor is connect with second voltage end.
Further, the sensor devices and the first switch module formation one connected to it are photosensitive
Component；A detecting module connects multiple photosensory assemblies in the optical detector circuitry.
Another further aspect of the embodiment of the present invention also provides a kind of control method of optical detector circuitry above-mentioned, the controlling party
Method includes：First control signal is inputted to first switch module, and second control signal is inputted to detecting module, controls photoreceptor
Light receiver and temperature sensing portion in part are in reverse-biased；First control signal is inputted to the first switch module, to
The detecting module inputs second control signal, reads the first electric signal parameter.
Further, described to input first control signal to the first switch module, to detecting module input the
Two control signals, reading the first electric signal parameter includes：First control signal is inputted to the first switch module, by light-receiving
First current potential of first sub-electrode in portion and the second current potential of the second sub electrode of temperature sensing portion are stored；To the detecting
Module inputs second control signal, reads first electric signal parameter.
The another aspect of the embodiment of the present invention also provides a kind of display device, including optical detector circuitry above-mentioned；It is described
Display device includes multiple sub-pixes arranged in arrays, and sensor devices are corresponding with single sub-pix in the optical detector circuitry
Setting, the brightness for sensing the sub-pix.
Further, in the optical detector circuitry, the same detecting module is connected with multiple photosensory assemblies, multiple
Photosensory assembly is arranged in a one-to-one correspondence with the sub-pix positioned at same column.
A kind of sensor devices of offer of the embodiment of the present invention, optical detector circuitry and driving method, the sensor devices include phase
To setting first electrode and second electrode, and it is between first electrode and second electrode and electric with first electrode and second
The optoelectronic semiconductor component of pole contact；Wherein, optoelectronic semiconductor component is divided into light receiving area and temperature sensing area；First electrode
Including：Positioned at the first sub-electrode of light receiving area, and the second sub electrode positioned at temperature sensing area；Second electrode includes：Position
In the third sub-electrode of light receiving area, and the 4th sub-electrode positioned at temperature sensing area；In first electrode and second electrode extremely
Two sub-electrodes in a few electrode are not connected to；Positioned at the optoelectronic semiconductor component of light receiving area, with the first sub-electrode and
Three sub-electrodes constitute light receiver；Optoelectronic semiconductor component positioned at temperature sensing area, with second sub electrode and the 4th sub-electrode
Constitute temperature sensing portion；Wherein, in the first sub-electrode and third sub-electrode, at least one sub-electrode is transparent electrode；Second son
Electrode and the 4th sub-electrode are opaque electrode.
In conclusion sensor devices in the present invention actual in application, optoelectronic semiconductor component in light receiver
In the case of receiving incident ray by transparent electrode, while carrying out photoelectric conversion, thermoelectric conversion is also carried out；And temperature
Optoelectronic semiconductor component is only capable of carrying out heat because that can not receive incident ray (two electrodes are opaque electrode) in detecting part
Electrotransformation；And since the optoelectronic semiconductor component in light receiver and temperature sensing portion is integral structure, two
The pyroelectric signal that person generates is essentially identical, is based on this, can be with when carrying out actual detection using the sensor devices in the present invention
The electricity detected from temperature sensing portion will be subtracted in the electric signal parameter detected from light receiver (photosignal+pyroelectric signal)
Signal parameter (pyroelectric signal), you can eliminate or reduce in the prior art, the photoelectric current testing result caused by pyroelectric signal
Inaccurate problem.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
Obtain other attached drawings according to these attached drawings.
Fig. 1 is a kind of structural schematic diagram of sensor devices provided in an embodiment of the present invention；
Fig. 2 is the structural schematic diagram of another sensor devices provided in an embodiment of the present invention；
Fig. 3 is a kind of schematic diagram of the optical detector circuitry including sensor devices provided in an embodiment of the present invention；
Fig. 4 a are a kind of concrete structure schematic diagram for optical detector circuitry including sensor devices that inventive embodiments provide；
Fig. 4 b are a kind of timing control figure for optical detector circuitry including sensor devices that inventive embodiments provide；
Fig. 5 be the another kind that provides of inventive embodiments include sensor devices optical detector circuitry concrete structure signal
Figure；
Fig. 6 is a kind of control method for optical detector circuitry that inventive embodiments provide；
The control method for another optical detector circuitry that Fig. 7 inventive embodiments provide；
Fig. 8 be the another kind that provides of inventive embodiments include sensor devices display device structural schematic diagram.
Reference numeral：
001- sensor devices；002- first switch modules；003- detecting modules；031- energy-storage modules；032- second switches
Module；01- optoelectronic semiconductor components；10- first electrodes；The first sub-electrodes of 11-；12- second sub electrodes；13- third sub-electrodes；
The 4th sub-electrodes of 14-；20- second electrodes；100- light receivers；200- temperature sensing portions；S1- light receiving areas；S2- temperature sensings
Area.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The embodiment of the present invention provides a kind of sensor devices, as shown in Figure 1 or 2, the sensor devices 001, including set relatively
Set first electrode 10 and second electrode 20, and between first electrode 10 and second electrode 20 and with first electrode 10 and
The optoelectronic semiconductor component 01 that second electrode 20 contacts.
Herein it should be noted that for optoelectronic semiconductor component 01, its own photoelectric effect and thermoelectricity are utilized
Effect can convert optical signal and thermal signal to electric signal (photoelectric current and thermocurrent), in general, common in the art
Optoelectronic semiconductor component can be PN junction, i.e., is made of p type semiconductor layer and n type semiconductor layer；Can also be such as Fig. 1 or Fig. 2
Shown in PIN junction, i.e., be made of the p type semiconductor layer, I types intrinsic semiconductor layer and the n type semiconductor layer that are cascading,
Wherein, the sequence of stacking is not limited, can is P-I-N (Fig. 1) from top to bottom, can also be N-I-P from top to bottom；When
It so can also be that other optoelectronic semiconductor components, the present invention are not especially limited this；In the present invention, PIN is preferably used
The optoelectronic semiconductor component of knot, following embodiment are that the present invention is described further as example.
On this basis, in order to clearly be illustrated to sensor devices in the present invention 001, with reference to figure 1, Fig. 2, by photoelectricity
Semiconductor devices 01 (PIN) is divided into light receiving area S1 and temperature sensing area S2；It should, of course, be understood that being only artificial herein
To optoelectronic semiconductor component 01 carry out region division be integral knot for optoelectronic semiconductor component 01 (PIN)
Structure is not the absolute construction of two separation.
Specifically, with reference to figure 1, Fig. 2, first electrode 10 includes：Positioned at the first sub-electrode 11, Yi Jiwei of light receiving area S1
In the second sub electrode 12 of temperature sensing area S2.
Second electrode 20 includes：Positioned at the third sub-electrode 13 of light receiving area S1, and positioned at the of temperature sensing area S2
Four sub-electrodes 14.
Wherein, it is located at the optoelectronic semiconductor component 01 (PIN) of light receiving area S1, with the first sub-electrode 11 and third sub-electrode
13 constitute light receiver 100；Positioned at the optoelectronic semiconductor component 01 (PIN) of temperature sensing area S2, with second sub electrode 12 and
Four sub-electrodes 14 constitute temperature sensing portion 200.
Specifically, for light receiver 100, in order to which the light for ensureing external can be incident to optoelectronic semiconductor component
01 (PIN) in practice, is needed the first son electricity in light receiver 100 with converting optical signal into electric signal and being detected
At least one of pole 11 and third sub-electrode 13 sub-electrode are set as transparent electrode；For example, it may be as shown in Figure 1, the
One sub-electrode 11 is transparent electrode, and third sub-electrode 13 is opaque electrode；Can also be the first sub-electrode 11 be opaque electricity
Pole, third sub-electrode 13 are opaque electrode；It can also be that the first sub-electrode 11 and third sub-electrode 13 are transparent electrode；When
So in practice, a transparent electrode is normally only set.
Certainly, inevitable adjoint when converting optical signal into electric signal by light receiver 100 it should here be understood that arriving
It the electric signal of thermal transition.
For temperature sensing portion 200, the present invention in, in order to ensure temperature sensing portion 200 do not receive incident ray (
That is, cannot be into the conversion of traveling optical signal), and be only that electric signal therefore in practice, will be in temperature sensing portion 200 by thermal transition
Second sub electrode 12 and the 4th sub-electrode 14 are disposed as opaque electrode.
On this basis, it further should be understood that arrive, in order to guarantee respectively to light receiver 100 and temperature sensing portion 200
The electric signal of middle generation is individually read, and in actual design, with reference to figure 1, Fig. 2, should ensure that first electrode 10 and second
Two sub-electrodes in electrode 20 at least one electrode are not connected to；For example, it may be as shown in Figure 1, in first electrode 10
Two sub-electrodes (11,12) and second electrode 20 in two sub-electrodes (13,14) be to be independently arranged, is unconnected
Electrode；Can also as shown in Fig. 2, two sub-electrodes (11,12) in first electrode 10 be independently arranged, unconnected electrode,
Second electrode 20 is the electrode, etc. of an entirety, and the present invention is not especially limited this, as long as ensureing first electrode 10 and the
Tool is not connected to electrode there are two independently arranged in an electrode in two electrodes 20, to carry out the reading of signal.
It further should be understood that arriving, for light receiver 100 and temperature sensing portion 200, due to its internal photoelectricity
Semiconductor devices 01 (PIN) is same structure, so in actual detection, the size basic one for the pyroelectric signal that the two generates
It causes, in actual making, also ensures that the region area size where light receiver 100 and temperature sensing portion 200 is most as far as possible
It is possible close, to reduce error.
In conclusion sensor devices in the present invention actual in application, optoelectronic semiconductor component in light receiver
In the case of receiving incident ray by transparent electrode, while carrying out photoelectric conversion, thermoelectric conversion is also carried out；And temperature
Optoelectronic semiconductor component is only capable of carrying out heat because that can not receive incident ray (two electrodes are opaque electrode) in detecting part
Electrotransformation；And since the optoelectronic semiconductor component in light receiver and temperature sensing portion is integral structure, two
The pyroelectric signal that person generates is essentially identical, is based on this, can be with when carrying out actual detection using the sensor devices in the present invention
The electricity detected from temperature sensing portion will be subtracted in the electric signal parameter detected from light receiver (photosignal+pyroelectric signal)
Signal parameter (pyroelectric signal), you can eliminate or reduce in the prior art, the photoelectric current testing result caused by pyroelectric signal
Inaccurate problem.
It should be noted that in the present invention, opaque electrode generally mostly uses metal material and is made, and transparent electrode can adopt
With transparent semiconductive oxide, for example, indium tin oxide (Indium TinOxide, ITO), indium gallium zinc oxide (Indium
Gallium Zinc Oxide, IGZO), indium-zinc oxide (Indium Zinc Oxide, IZO) etc., metal material can also be used
Thin hyaline layer or semitransparent layer made of matter.
On this basis, as described above, for the first sub-electrode 11 and third sub-electrode 13 in light receiver 100, until
A few sub-electrode is transparent electrode；Second sub electrode 12 and the 4th sub-electrode 14 in temperature sensing portion 200 are disposed as not
Transparent electrode, and the first sub-electrode 11 and second sub electrode 12 constitute the first electrode 10 of sensor devices 001, third sub-electrode 13
The second electrode 20 of sensor devices 001 is constituted with the 4th sub-electrode 14；Cost of manufacture is reduced in order to simplify technique based on this, this
Invention is preferred：
In the case that the first sub-electrode 11 in light receiver 100 is opaque electrode, first sub-electrode 11 and temperature
Spend the same material of 12 same layer of second sub electrode in detecting part 200；Alternatively, the third sub-electrode 13 in light receiver 100 is impermeable
In the case of prescribed electrode, the third sub-electrode 13 and the same material of 14 same layer of the 4th sub-electrode in temperature sensing portion 200.
Further, the first sub-electrode 11 in light receiver 100 and second sub electrode 12 in temperature sensing portion 200
It is currently preferred on the basis of same layer is with material, as shown in Fig. 2, the first sub-electrode 11 is integrated knot with second sub electrode 12
Structure；Alternatively, the third sub-electrode 13 in light receiver 100 and the same material of 14 same layer of the 4th sub-electrode in temperature sensing portion 200,
Currently preferred, third sub-electrode 13 is structure as a whole with the 4th sub-electrode 14；So, it is by two sub- electrode fabrications
Integral structure can reduce the resistance of the electrode of sensor devices, reduce the decaying that the electric signal of load is generated by resistance.
Certainly, it should here be understood that arriving, in the case of being structure as a whole with second sub electrode 12 for the first sub-electrode 11,
In order to ensure on light receiver 100 and temperature sensing portion 200 normally to read detection signal, at this point, third sub-electrode 13 and the
Four sub-electrodes 14 are necessarily two sub-electrodes for being independently arranged and (not being electrically connected)；For third sub-electrode 13 and the 4th son electricity
In the case that pole 14 is structure as a whole, similarly, the first sub-electrode 11 is necessarily to be independently arranged (electricity not to occur with second sub electrode 12
Connection) two sub-electrodes.
The embodiment of the present invention also provides a kind of optical detector circuitry, as shown in figure 3, the optical detector circuitry includes above-mentioned
Sensor devices 001 further include first switch module 002, detecting module 003.
Specifically, with reference to figure 3, detecting module 003 is connect with first switch module 002, and first switch module 001 passes through sense
In the first electrode 10 of optical device 001 independently arranged first sub-electrode 11 and second sub electrode 12 (can refer to Fig. 2) respectively with
Light receiver 100 and temperature sensing portion 200 in sensor devices 001 connect.
Wherein, first switch module 002, in the state of being turned on and off, control sensor devices 001 (in light
Receiving part 100 and temperature sensing portion 200) break-make between detecting module 003.
Detecting module 003, in the state that first switch module 002 is opened, controlling light receiver 100 and temperature sense
Survey portion 200 is in reverse-biased.
The detecting module 003 is additionally operable in the state that first switch module 002 is opened, to the first of light receiver 100
First current potential V1 of sub-electrode 11 and the second current potential V2 of the second sub electrode 12 of temperature sensing portion 200 are stored, and are passed through
Detecting voltage end Sense reads the first electric signal parameter Y of the difference for characterizing the first current potential V1 and the second current potential V2.
Since the optical detector circuitry includes sensor devices above-mentioned, there is the sensor devices phase provided with previous embodiment
Same structure and advantageous effect.Since previous embodiment has carried out detailed retouch to the structure of sensor devices and advantageous effect
It states, details are not described herein again.
Herein it should be noted that for the embodiment of sensor devices 001 above-mentioned, by the way that first electrode 10 is arranged
It is not connected to two sub-electrodes at least one electrode in second electrode 20, to ensure to light receiver 100 and temperature sensing
The electric signal generated in portion 200 is individually read, but for the optical detector circuitry in the present invention, is defined herein
There is independently arranged first sub-electrode 11 and second sub electrode 12 in first electrode 10；It is to be understood that in the present invention for
First electrode and second electrode in sensor devices 001 do not do actual specific restriction can for optical detector circuitry
The electrode with two sub-electrodes in the electrode (first electrode or second electrode) in sensor devices 001 is considered as the first electricity
Pole, certainly, another is then second electrode.
Herein it should also be noted that, by taking the optoelectronic semiconductor component 01 of PIN structural as an example, in practice, for generation
One end that electric signal is individually read, it is generally preferable to the cathode terminal (can refer to Fig. 5) for being set as the PIN structural；On namely
Cathode of the first electrode as sensor devices is stated, when by actual control so that sensor devices are in reverse-biased, needs to set
The voltage for setting second electrode (anode) is less than the voltage of first electrode, to carry out optical detection；Following embodiment is with this
For, the present invention is described further.
On this basis, currently preferred, as shown in figure 3, detecting module 003 is opened including energy-storage module 031 and second
Close module 032.
Specifically, second switch module 031, in the state that first switch module 002 is opened, controlling light receiver
100 and temperature sensing portion 200 be in reverse-biased.
Energy-storage module 031 is used in the state that first switch module 002 is opened, to the first current potential V1 (light receivers
First current potential V1 of 100 the first sub-electrode 11) and the second current potential V2 (second of the second sub electrode 12 of temperature sensing portion 200
Current potential V2) it is stored.
Second switch module is additionally operable in the state of unlatching, by the first current potential V1 stored on energy-storage module 031 and
Two current potential V2 are adjusted to the first electric signal parameter Y (signal parameter of the difference for characterizing the first current potential V1 and the second current potential V2),
And it is read out by detecting voltage end Sense.
Herein it should be noted that for above-mentioned for characterizing the difference of the first current potential V1 and the second current potential V2 in the present invention
The concrete form of first electric signal parameter Y is not construed as limiting, and first electric signal parameter Y can be V1-V2；Can also be V2-V1；
Can also be V1-V2 or V2-V1 and a constant " and " or " poor ", the present invention is not especially limited this, in practice can be with
Depending on the concrete structure of each module, as long as ensureing to can be derived that the first current potential V1 and the second current potential V2 according to actual circuit
Difference.
Specifically, circuit design as one preferred, a kind of specific setting about above-mentioned each module presented below is tied
Structure；Wherein, in being described below, "and/or", only a kind of incidence relation of description affiliated partner, indicates may exist three kinds
Relationship, for example, A and/or B, can indicate：Individualism A exists simultaneously A and B, these three situations of individualism B.In addition, this
Character "/" in text, it is a kind of relationship of "or" to typically represent forward-backward correlation object.
Signal, diode D1 represents light receiver 100 in Fig. 4 a, and diode D2 represents temperature sensing portion 200；
Wherein, first switch module 002 includes the first transistor T1 and second transistor T2.
The grid of the first transistor T1 is connect with first control signal end G1, the first pole of the first transistor T1 and light-receiving
First sub-electrode 11 (cathode of D1 in Fig. 4 a) in portion 100 connects, and the second pole of the first transistor T1 is connect with first node A；
The grid of second transistor T2 is connect with first control signal end G1, the first pole and the temperature sensing portion 200 of second transistor T2
Second sub electrode 12 (cathode of D2 in Fig. 4 a) connection, the second pole of second transistor T2 is connect with second node B.
The third sub-electrode 13 (anode of D1 in Fig. 4 a) of light receiver 100 and the 4th son electricity of temperature sensing portion 200
Pole 14 is connect with first voltage end Vss.
And/or energy-storage module 031 includes storage capacitance Cst, a pole of storage capacitance Cst is connect with first node A, separately
One pole is connect with second node B.
And/or second switch module 032 includes third transistor T3 and the 4th transistor T4.
Wherein, the grid of third transistor T3 is connect with second control signal end G2, the first pole of third transistor T3 with
Second pole of first node A connections, third transistor T3 is connect with detecting voltage end Sense.The grid of 4th transistor T4 with
The G2 connections of second control signal end, the first pole of the 4th transistor T4 are connect with second node B, the second pole of the 4th transistor T4
It is connect with second voltage end Vdd.
It should be noted that for the optical detector circuitry in the present invention, it can as shown in fig. 4 a, the optical detector circuitry
In, a detecting module 003 is connect by a first switch module 002 with a sensor devices 001.
Can with as shown in figure 5, the connection of detecting module 003 respectively by different first switch modules 002 with not
Same sensor devices 001 connect；That is, if by a first switch module 002 and a sensor devices 001 connected to it
When being defined as a photosensory assembly T, a detecting module 003 connects multiple photosensory assembly T in the optical detector circuitry.
Certainly, the optical detector circuitry in the present invention can also include multiple detecting modules 003, and for individually detecting
, can as shown in fig. 4 a for module 003, a detecting module 003 passes through a first switch module 002 and a photoreceptor
Part 001 connects；It can also be as shown in figure 5, a detecting module 003 connects multiple photosensory assembly T；The present invention does not limit this
It is fixed, setting can be selected as needed in practice.
The embodiment of the present invention also provides a kind of control method of optical detector circuitry above-mentioned, as shown in fig. 6, the controlling party
Method includes：
Step S101, first control signal is inputted to first switch module, and second control signal is inputted to detecting module,
Light receiver and temperature sensing portion in control sensor devices are in reverse-biased.
Step S102, first control signal is inputted to first switch module, inputs second control signal to detecting module, reads
Take the first electric signal parameter.
Further, for step S102, as shown in fig. 7, may include：
Step S1021, first control signal is inputted to first switch module, by the first of the first sub-electrode of light receiver
Second current potential of the second sub electrode of current potential and temperature sensing portion is stored.
Step S1022, second control signal is inputted to detecting module, reads the first electric signal parameter.
Signal, the break-make below in conjunction with transistor in Fig. 4 a and Fig. 4 b control sequential signals, to controlling the optical detection
Above-mentioned steps S101, step S1021, the step S1022 of circuit are described further.
It should be noted that being using all transistors as N-type crystal below in relation to the transistor switching process in Fig. 4 a
The explanation carried out for pipe, but the present invention is not restricted to this, and all transistors in Fig. 4 a may be P-type transistor, when
So, it needs to overturn each control signal in Fig. 4 b at this time.Following embodiment be using each transistor as N-type transistor,
Namely each transistor is opened under high level control.
Specifically, in above-mentioned steps S101：First control signal is inputted to first switch module, and to detecting module
Second control signal is inputted, the light receiver and temperature sensing portion controlled in sensor devices is in for reverse-biased, reference chart
" charging stage " in 4a and Fig. 4 b, specifically controlling process can be as follows：
The first control signal of first control signal end G1 input high levels into first switch module 002, and to detecing
The second control signal for surveying the second control signal end G2 input high levels in the second switch module 002 of module 003, first
Under the high level control for controlling signal and second control signal, the first transistor T1, second transistor T2, third transistor T3,
4th transistor T4 conductings, at this point, inputting a voltage identical with second voltage end Vdd, and the electricity to detecting voltage end Sense
Voltage of the pressure more than first voltage end Vss, to control at the light receiver in sensor devices (D1) and temperature sensing portion (D2)
In reverse-biased.
Next, with reference to the integration phase in figure 4b, first control signal and second control signal go to low level current potential,
The first transistor T1, second transistor T2, third transistor T3, the 4th transistor T4 cut-offs, the light under reverse-biased connect
Receipts portion (D1) and temperature sensing portion (D2) start to integrate when light is incident to light receiver (D1).
Next, for being inputted to first switch module in above-mentioned steps S102 (including step S1021 and step S1022)
First control signal inputs second control signal to detecting module, reads the first electric signal parameter, and specifically controlling process can be with
It is as follows：
With reference to memory phase in figure 4b, the first control signal of first control signal end G1 inputs goes to high level, and first
Transistor T1 and second transistor T2 conductings, at this point, by the first current potential V1 (optical telecommunications of the first sub-electrode of light receiver (D1)
Number and pyroelectric signal) and temperature sensing portion (D2) second sub electrode the second current potential V2 (pyroelectric signal) to storing to depositing
Storing up electricity holds Cst, and the voltage of two pole plates of storage capacitance Cst is respectively the first current potential V1 and the second current potential V2, stores voltage
Difference is V2-V1.
Then, with reference to being read the stage in figure 4b, first control signal end G1 goes to low level in first switch module 002,
The first transistor T1 and second transistor T2 cut-offs, second control signal end G2 inputs second control signal go to high level, the
Three transistor T3, the 4th transistor T4 conductings, enter the adjusting stage (Fig. 4 b), connect with second node B in storage capacitance Cst at this time
Under the action of the Vdd of second voltage end saltus step occurs for the voltage (V2) on the pole plate connect, and makes in storage capacitance Cst with the
Voltage V1 on the pole plate of one node A connections is adjusted to Vdd- (V2-V1), and is read out this by detecting voltage end Sense
Signal parameter.
It should here be understood that arriving, for above-mentioned Vdd- (V2-V1), Vdd is the fixed electricity applied on second voltage end
Pressure is that known parameters namely the signal parameter can be directly as the differences for characterizing the first current potential V1 and the second current potential V2
Signal parameter, i.e. the first electric signal parameter Y, and be directly read out first electric signal parameter can (it is understood that this
Pyroelectric signal is eliminated in one electric signal parameter, to eliminate or reduce in the prior art, the photoelectricity caused by pyroelectric signal
Flow the problem of testing result inaccuracy).
The embodiment of the present invention also provides a kind of display device, including aforementioned any optical detector circuitry；And the display
Device includes multiple sub-pixes arranged in arrays, and sensor devices are correspondingly arranged with single sub-pix in optical detector circuitry, are used
In the brightness of sensing sub-pix, it is detected with the intrinsic brilliance to sub-pix, so as to according to the detection knot of intrinsic brilliance
Fruit compensates each sub-pix.
Since the display device includes sensor devices above-mentioned, have identical with the sensor devices that previous embodiment provides
Structure and advantageous effect.Since previous embodiment is described in detail the structure of sensor devices and advantageous effect,
Details are not described herein again.
Herein it should be noted that in embodiments of the present invention, display device at least may include specifically LCD display
Plate and organic LED display panel, such as the display panel can be applied to display, TV, Digital Frame, mobile phone
Or in any product or component with display function such as tablet computer.
Certainly, in practice, it is preferred that as shown in figure 8, (Fig. 8 illustrates only this for the optical detector circuitry in the present invention
Sensor devices 001 in circuit) for, it is general to be applied to organic LED display panel more；And for the organic light emission
The type of diode display panel, the present invention are not especially limited, and can be top emittings, can be bottom emittings；It should as long as ensureing
The light that organic luminescent device (OLED) in organic LED display panel is sent out, can be incident to optical detector circuitry
In sensor devices in light receiver.
In addition, for the display device including multiple sub-pixes arranged in arrays, in order to simplify optical detection electricity
Road and entire optical detection process, it is preferred that with reference to multiple photosensory assembly T (one that in figure 5, a detecting module 003 connects
A first switch module 002 and a sensor devices 001 connected to it are constituted), and multiple photosensory assembly T with positioned at same
The sub-pix of row is arranged in a one-to-one correspondence；Namely pass through a detecting mould positioned at the corresponding multiple photosensory assembly T of sub-pix of same column
Block 003 is controlled, the corresponding different detecting module 003 of sub-pix of different lines.
It is right herein it should be noted that existing display device was shown generally by the mode of progressive scan
For the present invention includes the display device of optical detector circuitry above-mentioned, need to consider display and optical detection two simultaneously
Aspect, therefore, in order to avoid the interference between display and optical detection, in practice preferably, display driving and optical detection are driven
It is dynamic to carry out at times.
One of ordinary skill in the art will appreciate that：Realize that all or part of step of above method embodiment can pass through
The relevant hardware of program instruction is completed, and program above-mentioned can be stored in a computer read/write memory medium, the program
When being executed, step including the steps of the foregoing method embodiments is executed；And storage medium above-mentioned includes：ROM, RAM, magnetic disc or light
The various media that can store program code such as disk.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can easily think of the change or the replacement, and should all contain
Lid is within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.
Claims (11)
1. a kind of sensor devices, which is characterized in that including being oppositely arranged first electrode and second electrode, and be located at described first
The optoelectronic semiconductor component contacted between electrode and the second electrode and with the first electrode and the second electrode；
Wherein, the optoelectronic semiconductor component is divided into light receiving area and temperature sensing area；
The first electrode includes：Positioned at the first sub-electrode of the light receiving area, and positioned at the temperature sensing area
Two sub-electrodes；The second electrode includes：Positioned at the third sub-electrode of the light receiving area, and it is located at the temperature sensing area
The 4th sub-electrode；
Two sub-electrodes in the first electrode and the second electrode at least one electrode are not connected to；
Positioned at the optoelectronic semiconductor component of the light receiving area, constituted with first sub-electrode and the third sub-electrode
Light receiver；The optoelectronic semiconductor component positioned at the temperature sensing area, with the second sub electrode and the 4th son
Electrode constitutes temperature sensing portion；
Wherein, in first sub-electrode and the third sub-electrode, at least one sub-electrode is transparent electrode；Second son
Electrode and the 4th sub-electrode are opaque electrode.
2. sensor devices according to claim 1, which is characterized in that
In the case where first sub-electrode is opaque electrode, first sub-electrode and the second sub electrode same layer are same
Material；
In the case where the third sub-electrode is opaque electrode, the third sub-electrode and the 4th sub-electrode same layer are same
Material.
3. sensor devices according to claim 2, which is characterized in that
In the case where first sub-electrode is opaque electrode, first sub-electrode is integrated with the second sub electrode
Structure；
In the case where the third sub-electrode is opaque electrode, the third sub-electrode is integrated with the 4th sub-electrode
Structure.
4. a kind of optical detector circuitry, which is characterized in that including claim 1-3 any one of them sensor devices；
The optical detector circuitry further includes first switch module, detecting module；
The detecting module is connect with the first switch module, and the first switch module passes through the first of the sensor devices
Independently arranged first sub-electrode and second sub electrode are connect with light receiver and temperature sensing portion respectively in electrode；
The first switch module, in the state of being turned on and off, controlling the sensor devices and the detecting module
Between break-make；
The detecting module, in the state that the first switch module is opened, controlling the light receiver and the temperature
Degree detecting part is in reverse-biased；
The detecting module is additionally operable in the state that the first switch module is opened, to the first son of the light receiver
First current potential of electrode and the second current potential of the second sub electrode of the temperature sensing portion are stored, and by detecting voltage end
Read the first electric signal parameter of the difference for characterizing first current potential and second current potential.
5. optical detector circuitry according to claim 4, which is characterized in that
The detecting module includes energy-storage module and second switch module；
The second switch module, in the state that the first switch module is opened, controlling the light receiver and institute
It states temperature sensing portion and is in reverse-biased；
The energy-storage module is used in the state that the first switch module is opened, to first current potential and described second
Current potential is stored；
The second switch module is additionally operable in the state of unlatching, first current potential that will be stored on the energy-storage module
It adjusts to first electric signal parameter with second current potential, and is read out by the detecting voltage end.
6. optical detector circuitry according to claim 5, which is characterized in that
The first switch module includes the first transistor and second transistor；
The grid of the first transistor is connect with first control signal end, and the first pole and the light of the first transistor connect
First sub-electrode in receipts portion connects, and the second pole of the first transistor is connect with first node；
The grid of the second transistor is connect with the first control signal end, the first pole of the second transistor with it is described
The second sub electrode of temperature sensing portion connects, and the second pole of the second transistor is connect with second node；
The third sub-electrode of the light receiver and the 4th sub-electrode of the temperature sensing portion with the first voltage end
Connection；
And/or the energy-storage module includes storage capacitance, a pole of the storage capacitance is connect with the first node, another
Pole is connect with the second node；
And/or the second switch module includes third transistor and the 4th transistor；
The grid of the third transistor is connect with second control signal end, the first pole of the third transistor and described first
Node connects, and the second pole of the third transistor is connect with the detecting voltage end；
The grid of 4th transistor is connect with the second control signal end, the first pole of the 4th transistor with it is described
Second node connects, and the second pole of the 4th transistor is connect with second voltage end.
7. according to claim 4-6 any one of them optical detector circuitries, which is characterized in that the sensor devices and with
Its first switch module connected forms a photosensory assembly；
A detecting module connects multiple photosensory assemblies in the optical detector circuitry.
8. a kind of control method of claim 5-7 any one of them optical detector circuitries, which is characterized in that the controlling party
Method includes：
First control signal is inputted to first switch module, and second control signal is inputted to detecting module, controls sensor devices
In light receiver and temperature sensing portion be in reverse-biased；
First control signal is inputted to the first switch module, second control signal is inputted to the detecting module, reads the
One electric signal parameter.
9. the control method of optical detector circuitry according to claim 8, which is characterized in that
It is described to input first control signal to the first switch module, second control signal is inputted to the detecting module, is read
The first electric signal parameter is taken to include：
First control signal is inputted to the first switch module, by the first current potential and temperature of the first sub-electrode of light receiver
Second current potential of the second sub electrode of detecting part is stored；
Second control signal is inputted to the detecting module, reads first electric signal parameter.
10. a kind of display device, which is characterized in that including claim 5-7 any one of them optical detector circuitries；
The display device includes multiple sub-pixes arranged in arrays,
Sensor devices are correspondingly arranged with single sub-pix in the optical detector circuitry, the brightness for sensing the sub-pix.
11. display device according to claim 10, which is characterized in that same described to detect in the optical detector circuitry
It surveys module and is connected with multiple photosensory assemblies, multiple photosensory assembly is arranged in a one-to-one correspondence with the sub-pix positioned at same column.
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