CN108461554A - Full back-contact heterojunction solar battery and preparation method thereof - Google Patents
Full back-contact heterojunction solar battery and preparation method thereof Download PDFInfo
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- CN108461554A CN108461554A CN201810084742.5A CN201810084742A CN108461554A CN 108461554 A CN108461554 A CN 108461554A CN 201810084742 A CN201810084742 A CN 201810084742A CN 108461554 A CN108461554 A CN 108461554A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 72
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 31
- 238000009413 insulation Methods 0.000 claims abstract description 14
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 4
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910000979 O alloy Inorganic materials 0.000 claims description 3
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000004050 hot filament vapor deposition Methods 0.000 claims description 3
- 238000006748 scratching Methods 0.000 claims description 3
- 230000002393 scratching effect Effects 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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Abstract
The invention discloses a kind of full back-contact heterojunction solar batteries and preparation method thereof, and the wherein battery includes monocrystalline silicon piece, the first intrinsic amorphous silicon layer, the second intrinsic amorphous silicon layer, antireflective coating, the first back surface field, the second back surface field, emitter and positive and negative electrode；Wherein, first intrinsic amorphous silicon layer is arranged in the front of monocrystalline silicon piece, second intrinsic amorphous silicon layer is arranged at the back side of monocrystalline silicon piece, antireflective coating is arranged in the first intrinsic amorphous silicon layer, first back surface field is arranged on the second intrinsic layer, emitter is arranged between the second intrinsic layer and the second back surface field, and insulation set between the back surface field of emitter/second and the first back surface field, electrode is arranged in the first back surface field and the second back surface field.Full back-contact heterojunction solar battery provided by the invention and preparation method thereof, the positive grid line of monocrystalline silicon piece is inherently avoided to block incident ray, the current gain that can be achieved 4.5% or more, effectively improves the photoelectric conversion efficiency of heterojunction solar battery.
Description
Technical field
The present invention relates to technical field of solar batteries more particularly to a kind of full back-contact heterojunction solar battery and
Preparation method.
Background technology
Heterojunction solar battery have high efficiency, high stability, low-temperature coefficient, can generating electricity on two sides and cost decline
The advantages that space is big is expected to as following one of the mainstream photovoltaic technology.
Heterojunction solar battery in the prior art generally includes amorphous silicon membrane, transparent conductive film layer (TCO), grid line
Electrode etc., and since amorphous silicon membrane, tco layer are to the reasons such as block of the absorption of incident sunlight and front gate line, it influences
The further promotion of this kind of structure solar cell short-circuit current density.
Invention content
The object of the present invention is to provide a kind of full back-contact heterojunction solar batteries and preparation method thereof, in solution
The problems of the prior art are stated, the short-circuit current density of battery is promoted, promote cell power generation efficiency.
The present invention provides a kind of full back-contact heterojunction solar batteries, wherein including：
Monocrystalline silicon piece；
Positive first intrinsic amorphous silicon layer in the monocrystalline silicon piece is set；
The second intrinsic amorphous silicon layer at the back side of the monocrystalline silicon piece is set；
Antireflection film layer in first intrinsic amorphous silicon layer is set；
Emitter in second intrinsic amorphous silicon layer and the first back surface field, the emitter and first back of the body are set
Insulation set between；
The second back surface field being arranged on the emitter, insulation set between second back surface field and first back surface field；
Electrode in first back surface field and second back surface field is set.
Full back-contact heterojunction solar battery as described above, wherein preferably, the monocrystalline silicon piece is N-type
Monocrystalline silicon piece.
Full back-contact heterojunction solar battery as described above, wherein preferably, first intrinsic amorphous silicon
Layer and second intrinsic amorphous silicon layer are intrinsic amorphous silicon film or intrinsic amorphous silicon oxygen alloy film.
Full back-contact heterojunction solar battery as described above, wherein preferably, the electrode is silver-colored gate electrode
Or copper electrode.
Full back-contact heterojunction solar battery as described above, wherein preferably, the transmitting extremely p-type is non-
Polycrystal silicon film or p-type microcrystalline silicon film.
The present invention also provides a kind of full back-contact heterojunction solar battery preparation methods, wherein including walking as follows
Suddenly：
The first intrinsic amorphous silicon layer is formed in the front of monocrystalline silicon piece；
Antireflective coating is formed in first intrinsic amorphous silicon layer；
The second intrinsic amorphous silicon layer is formed at the back side of the monocrystalline silicon piece；
Emitter is formed in first area in second intrinsic amorphous silicon layer；
On the other regions and the emitter in addition to the first area in second intrinsic amorphous silicon layer
Form back surface field；
By the emitter on the first area and the back surface field on the emitter with except the first area with
Back surface field insulation on outer other regions；
Electrode is formed in the back surface field.
Full back-contact heterojunction solar battery preparation method as described above, wherein preferably, described second
Further include before forming emitter in first area in intrinsic amorphous silicon layer：
To other regions in addition to first area in second intrinsic amorphous silicon layer into line mask.
Full back-contact heterojunction solar battery preparation method as described above, wherein preferably, pass through plasma
Body enhances chemical vapour deposition technique or hot filament CVD and forms first intrinsic amorphous silicon layer, described second intrinsic
Amorphous silicon layer, the antireflective coating and the emitter.
Full back-contact heterojunction solar battery preparation method as described above, wherein preferably, by described first
The back surface field on the emitter and the emitter on region and the institute on other regions in addition to the first area
Back surface field insulation is stated to specifically include：
Form groove in the back surface field, by the first area the emitter and the emitter on
Back surface field insulate with the back surface field on other regions in addition to the first area.
Full back-contact heterojunction solar battery preparation method as described above, wherein preferably, in the back surface field
Upper formation groove by the emitter on the first area and the back surface field on the emitter and removes firstth area
Back surface field insulation on other regions other than domain specifically includes：
By way of mechanical scratching or laser grooving and scribing groove is formed in the back surface field.
Full back-contact heterojunction solar battery preparation method as described above, wherein preferably, described second
Further include before forming back surface field on other regions in addition to the first area and the emitter in intrinsic amorphous silicon layer：
To the setting regions in other regions in addition to the first area in second intrinsic amorphous silicon layer into
Line mask, by the region point of the back surface field to be formed in the first area and other regions in addition to the first area
From.
Full back-contact heterojunction solar battery provided by the invention and preparation method thereof, inherently avoids monocrystalline
The grid line of front side of silicon wafer blocks the current gain, it can be achieved that 4.5% or more to incident ray, effectively improves the hetero-junctions sun
The photoelectric conversion efficiency of energy battery.
Description of the drawings
Specific embodiments of the present invention will be described in further detail below in conjunction with the accompanying drawings.
Fig. 1 is the structural schematic diagram of full back-contact heterojunction solar battery provided in an embodiment of the present invention；
Fig. 2 is the flow chart of full back-contact heterojunction solar battery preparation method provided in an embodiment of the present invention；
Fig. 3 is to the second area in the second intrinsic amorphous silicon layer into the state diagram of line mask；
Fig. 4 is the state diagram after forming back surface field；
Fig. 5 is that the state diagram after groove is formed in back surface field.
Reference sign：
100- monocrystalline silicon pieces the first intrinsic amorphous silicon layers of 200-
300- antireflection film layers the second intrinsic amorphous silicon layers of 400-
500- emitter 600- back surface fields
610- the first back surface field the second back surface fields of 620-
700- electrode 800- grooves
900- mask plates
Specific implementation mode
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, and is only used for explaining the present invention, and is not construed as limiting the claims.
As shown in Figure 1, an embodiment of the present invention provides a kind of full back-contact heterojunction solar batteries comprising monocrystalline
Silicon chip 100, the first intrinsic amorphous silicon layer 200, the second intrinsic amorphous silicon layer 400, antireflection film layer 300, emitter 500, first
Back surface field 610, the second back surface field 620 and positive and negative electrode 700；Wherein, the first intrinsic amorphous silicon layer 200 is arranged in monocrystalline silicon piece 100
Front, the second intrinsic amorphous silicon layer 400 are arranged at the back side of monocrystalline silicon piece 100, and the setting of antireflection film layer 300 is intrinsic non-first
On crystal silicon layer 200, the first back surface field 610 and emitter 500 are arranged in the second intrinsic amorphous silicon layer 400, and the second back surface field 620 is set
It sets on emitter 500, and insulation set between 500/ second back surface field 620 of emitter and the first back surface field 610, the second back surface field 620
With 610 insulation set of the first back surface field, electrode 700 is arranged in the first back surface field 610 and the second back surface field 620.
Wherein, emitter 500 and the second back surface field 620 are the silica-base film of high-dopant concentration, in emitter 500 and second
The contact surface of back surface field 620 forms NP tunnel junctions, it is possible thereby to be directly realized by the transmission in hole.The full back of the body provided in an embodiment of the present invention
Contact heterojunction solar battery is inherently avoided in 100 front setting gate electrode line of monocrystalline silicon piece to incident ray
Block the current gain, it can be achieved that 4.5% or more, effectively improve the photoelectric conversion efficiency of heterojunction solar battery.
In order to make heterojunction solar battery obtain higher photoelectric conversion efficiency, monocrystalline silicon piece 100 can be N-type monocrystalline
Silicon chip.
It should be noted that in order to improve the passivation effect to 100 surface of monocrystalline silicon piece, improves device and integrally lack the sub- longevity
Life, the first intrinsic amorphous silicon layer 200 and the second intrinsic amorphous silicon layer 400 all can be intrinsic amorphous silicon film (a-Si:H) or originally
Levy non-crystalline silicon oxygen alloy film (a-SiOx:H), it is possible thereby to improve open-circuit voltage, to improve the transfer efficiency of battery.It is preferred that
, the first intrinsic amorphous silicon layer 200 and the second intrinsic amorphous silicon layer 400 are intrinsic amorphous silicon film.
It is understood that in order to make electrode 700 obtain preferable electric conductivity, in the present embodiment, electrode 700 can be with
For silver-colored gate electrode or copper electrode.
Emitter 500 can be P-type non-crystalline silicon film or p-type microcrystalline silicon film, to improve the open-circuit voltage of battery, in turn
Improve the transfer efficiency of battery, it is preferred that emitter 500 is p-type microcrystalline silicon film.
Antireflection film layer 300 can be SiOx、SiNx、Ta2O5、TiO2In one kind, effect mainly by reduce too
Sunlight battery surface reflection loss, to increase the light absorption of battery.Preferably, antireflection film layer 300 can have table
The effect of face passivation.
As shown in Fig. 2, the embodiment of the present invention additionally provides a kind of full back-contact heterojunction solar battery preparation method,
Include the following steps：
S100, the first intrinsic amorphous silicon layer 200 is formed in the front of monocrystalline silicon piece 100.
S200, antireflection film layer 300 is formed in the first intrinsic amorphous silicon layer 200.
S300, the second intrinsic amorphous silicon layer 400 is formed at the back side of monocrystalline silicon piece 100.
Emitter 500 is formed in S400, the first area in the second intrinsic amorphous silicon layer 400, as shown in Figure 3.
Shape on S500, other regions in addition to first area in the second intrinsic amorphous silicon layer 400 and emitter 500
At back surface field 600, as shown in Figure 4, wherein in the present embodiment, other regions in addition to first area can be second area,
First area and second area can be spaced setting.
It is S600, the back surface field on the emitter 500 on first area and the back surface field and second area on emitter 500 is exhausted
Edge, as shown in Figure 5.
S700, electrode 700 is formed in back surface field 600.
Further, as shown in figure 3, further including before step S400：
S40, to second area into line mask.Due to being in the second intrinsic amorphous silicon layer 400 when forming emitter 500
It carries out on all surfaces, still, in order to simplify technique, avoids because being formed on all surfaces of the second intrinsic amorphous silicon layer 400
Emitter 500 after, it is also necessary to by non-emissive pole 500 on the second intrinsic amorphous silicon 400 by way of chemical attack or delineation
Region carries out membrane removal.But for this preparation method, the second intrinsic amorphous is easily caused during chemical attack and delineation
The damage of silicon layer 400, while can not also ensure the precision controlling removed to emitter 500.It, can be with for this purpose, in the present embodiment
To second area into line mask before forming emitter 500, to prevent emitter 500 to be covered in second area, so as to
Retain second area while forming emitter 500, while also simplifying technique.
It wherein, can be by the way that mask plate 900 be arranged to be carried out to second area in second area for the ease of masking operations
Mask after emitter 500 to be formed, can remove mask plate 900.
It should be noted that plasma enhanced chemical vapor deposition method (PECVD) or Hot Filament Chemical Vapor can be passed through
Sedimentation (HWCVD) forms the first intrinsic amorphous silicon layer 200, the second intrinsic amorphous silicon layer 400, antireflection film layer 300 and hair
Emitter-base bandgap grading 500.
Further, step S600 can specifically include：
S610, groove is formed in back surface field 600, by the emitter 500 on first area, the back surface field on emitter 500
It is detached respectively with the back surface field on second area.
Specifically, step S610 can be specifically included：
Groove 800 is formed in back surface field 600 by way of mechanical scratching or laser grooving and scribing, by emitter 500, transmitting
The second back surface field 620 on pole 500 insulate with the first back surface field 610 respectively.
Certainly, groove 800 can also be formed in alternative ways, in another embodiment, can before step S500
To include：
Setting regions in other regions in addition to first area in second intrinsic amorphous silicon layer 400 is covered
Film, by the region disconnecting of the back surface field to be formed in first area and other regions in addition to the first area, i.e.,
The region of the first back surface field 610 to be formed in two regions can be detached with first area, and then can make emitter 500 and
The first back surface field 610 insulation in two regions.
Preparation for electrode 700 can be realized by silk-screen printing technique or electroplating technology, in the present embodiment,
Preferably, electrode 700 is prepared by silk-screen printing technique.
It further, can be to monocrystalline silicon before the front of monocrystalline silicon piece 100 forms the first intrinsic amorphous silicon layer 200
Piece 100 carries out making herbs into wool cleaning.The purpose of making herbs into wool is to produce the suede structure that can reduce surface sun light reflection, effective suede
Face structure enables to incident light in silicon chip surface multiple reflections and refraction, increases the absorption of light, reduces reflectivity, helps
In the performance for improving battery.The purpose of cleaning is the clean journey that eliminate each pollutant for being adsorbed on silicon chip surface, and clean
Degree directly affects the yield rate and reliability of cell piece, promotes the whole minority carrier life time of device, promotes battery open circuit voltage.
Full back-contact heterojunction solar battery provided in an embodiment of the present invention and preparation method thereof, inherently avoids
The positive grid line of monocrystalline silicon piece to incident ray blocks the current gain, it can be achieved that 4.5% or more, effectively improves heterogeneous
The photoelectric conversion efficiency of joint solar cell.
The structure, feature and effect of the present invention, the above institute are described in detail based on the embodiments shown in the drawings
Only presently preferred embodiments of the present invention is stated, but the present invention is not to limit practical range, every structure according to the present invention shown in drawing
Change made by thinking, or is revised as the equivalent embodiment of equivalent variations, when not going beyond the spirit of the description and the drawings,
It should all be within the scope of the present invention.
Claims (11)
1. a kind of full back-contact heterojunction solar battery, which is characterized in that including：
Monocrystalline silicon piece；
Positive first intrinsic amorphous silicon layer in the monocrystalline silicon piece is set；
The second intrinsic amorphous silicon layer at the back side of the monocrystalline silicon piece is set；
Antireflection film layer in first intrinsic amorphous silicon layer is set；
Emitter in second intrinsic amorphous silicon layer and the first back surface field be set, the emitter and first back surface field it
Between insulation set；
The second back surface field being arranged on the emitter, insulation set between second back surface field and first back surface field；
Electrode in first back surface field and second back surface field is set.
2. full back-contact heterojunction solar battery according to claim 1, which is characterized in that the monocrystalline silicon piece is
N type single crystal silicon piece.
3. full back-contact heterojunction solar battery according to claim 1, which is characterized in that described first is intrinsic non-
Crystal silicon layer and second intrinsic amorphous silicon layer are intrinsic amorphous silicon film or intrinsic amorphous silicon oxygen alloy film.
4. full back-contact heterojunction solar battery according to claim 1, which is characterized in that the electrode is silver-colored grid
Electrode or copper electrode.
5. full back-contact heterojunction solar battery according to claim 1, which is characterized in that the transmitting extremely P
Type amorphous silicon membrane or p-type microcrystalline silicon film.
6. a kind of full back-contact heterojunction solar battery preparation method, which is characterized in that include the following steps：
The first intrinsic amorphous silicon layer is formed in the front of monocrystalline silicon piece；
Antireflective coating is formed in first intrinsic amorphous silicon layer；
The second intrinsic amorphous silicon layer is formed at the back side of the monocrystalline silicon piece；
Emitter is formed in first area in second intrinsic amorphous silicon layer；
It is formed on other regions in addition to the first area and the emitter in second intrinsic amorphous silicon layer
Back surface field；
By the emitter on the first area and the back surface field on the emitter and in addition to the first area
Back surface field insulation on other regions；
Electrode is formed in the back surface field.
7. full back-contact heterojunction solar battery preparation method according to claim 6, which is characterized in that described
Further include before forming emitter in first area in second intrinsic amorphous silicon layer：
To other regions in addition to first area in second intrinsic amorphous silicon layer into line mask.
8. full back-contact heterojunction solar battery preparation method according to claim 6, which is characterized in that pass through
Gas ions enhance chemical vapour deposition technique or hot filament CVD forms first intrinsic amorphous silicon layer, described second
Intrinsic amorphous silicon layer, the antireflective coating and the emitter.
9. full back-contact heterojunction solar battery preparation method according to claim 6, which is characterized in that will be described
In the back surface field on the emitter and the emitter and other regions in addition to the first area on first area
The back surface field insulation specifically include：
Groove is formed in the back surface field, by the emitter on the first area and the back surface field on the emitter
It insulate with the back surface field on other regions in addition to the first area.
10. full back-contact heterojunction solar battery preparation method according to claim 9, which is characterized in that in institute
It states and forms groove in back surface field, by the emitter on the first area and the back surface field on the emitter and except described
Back surface field insulation on other regions other than first area specifically includes：
By way of mechanical scratching or laser grooving and scribing groove is formed in the back surface field.
11. full back-contact heterojunction solar battery preparation method according to claim 9, which is characterized in that in institute
It states and is formed before back surface field on other regions in addition to the first area and the emitter in the second intrinsic amorphous silicon layer
Further include：
Setting regions in other regions in addition to the first area in second intrinsic amorphous silicon layer is covered
Film, by the region disconnecting of the back surface field to be formed in the first area and other regions in addition to the first area.
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| CN201810084742.5A CN108461554A (en) | 2018-01-29 | 2018-01-29 | Full back-contact heterojunction solar battery and preparation method thereof |
| CN201880001491.8A CN110326119A (en) | 2018-01-29 | 2018-08-23 | Heterojunction solar battery and preparation method thereof |
| PCT/CN2018/101989 WO2019144611A1 (en) | 2018-01-29 | 2018-08-23 | Heterojunction solar cell and preparation method therefor |
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| CN111785812A (en) * | 2020-07-15 | 2020-10-16 | 苏州联诺太阳能科技有限公司 | Solar cell structure and preparation method thereof |
| CN114883451A (en) * | 2022-05-25 | 2022-08-09 | 中国科学院电工研究所 | Preparation method of full back contact crystalline silicon heterojunction solar cell structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112133774A (en) * | 2020-10-12 | 2020-12-25 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | Back-junction back-contact solar cell and manufacturing method thereof |
| CN115207134B (en) * | 2022-07-01 | 2024-01-26 | 中国华能集团清洁能源技术研究院有限公司 | Back contact heterojunction battery piece, photovoltaic module and manufacturing method of back contact heterojunction battery piece |
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| CN110326119A (en) | 2019-10-11 |
| WO2019144611A1 (en) | 2019-08-01 |
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